JP2009070915A - サセプタ、半導体製造装置および半導体製造方法 - Google Patents
サセプタ、半導体製造装置および半導体製造方法 Download PDFInfo
- Publication number
- JP2009070915A JP2009070915A JP2007235685A JP2007235685A JP2009070915A JP 2009070915 A JP2009070915 A JP 2009070915A JP 2007235685 A JP2007235685 A JP 2007235685A JP 2007235685 A JP2007235685 A JP 2007235685A JP 2009070915 A JP2009070915 A JP 2009070915A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- susceptor
- opening
- inner susceptor
- placing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】サセプタ11は、ウェーハwの径より小さく、表面にウェーハwを載置するための凸部を有するインナーサセプタ12と、中心部に開口部を有し、インナーサセプタ12を開口部が遮蔽されるように載置するための第1の段部と、この第1の段部の上段に設けられ、ウェーハを載置するための第2の段部を有するアウターサセプタ13を備える。
【選択図】図1
Description
図1に本実施形態のサセプタの断面図を示す。図に示すように、サセプタ11は、インナーサセプタ12と、このインナーサセプタ12と分離可能なアウターサセプタ13から構成されている。
Claims (5)
- ウェーハの径より小さく、表面に前記ウェーハを載置するための凸部を有するインナーサセプタと、
中心部に開口部を有し、前記インナーサセプタを前記開口部が遮蔽されるように載置するための第1の段部と、この第1の段部の上段に設けられ、前記ウェーハを載置するための第2の段部を有するアウターサセプタを備えることを特徴とするサセプタ。 - 前記第2の段部は、前記ウェーハのベベル部が載置される部分にテーパを有することを特徴とする請求項1に記載のサセプタ。
- 前記第1の段部または前記第2の段部は、複数の段部より構成されることを特徴とする請求項1または請求項2に記載のサセプタ。
- ウェーハが導入される反応炉と、
前記反応炉にプロセスガスを供給するためのガス供給機構と、
前記反応炉より前記プロセスガスを排出するためのガス排出機構と、
前記ウェーハの径より小さく、表面に前記ウェーハを載置するための凸部を有するインナーサセプタと、
中心部に開口部を有し、前記インナーサセプタを前記開口部が遮蔽されるように載置するための第1の段部と、この第1の段部の上段に設けられ、前記ウェーハを載置するための第2の段部を有するアウターサセプタと、
前記ウェーハを前記インナーサセプタおよび前記アウターサセプタの下部より加熱するためのヒータと、
前記ウェーハを回転させるための回転機構と、
前記ヒータを貫通し、前記インナーサセプタを上下駆動させるための突き上げピンを備えることを特徴とする半導体製造装置。 - 反応炉内にウェーハを搬入し、
前記反応炉内に設置され、前記ウェーハの径より小さく、表面に前記ウェーハを載置するための凸部を有するインナーサセプタを、突き上げピンにより上昇させて、前記インナーサセプタ上に前記ウェーハを載置し、
前記突き上げピンを下降させ、前記インナーサセプタを、中心部に開口部を有するアウターサセプタの第1の段部上に前記開口部を遮蔽するように載置するとともに、前記ウェーハを、前記アウターサセプタの前記第1の段部の上段に設けられた第2の段部上に載置し、
前記ウェーハを前記インナーサセプタおよび前記アウターサセプタを介して加熱し、
前記ウェーハを回転させ、
前記ウェーハ上にプロセスガスを供給することを特徴とする半導体製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007235685A JP5038073B2 (ja) | 2007-09-11 | 2007-09-11 | 半導体製造装置および半導体製造方法 |
KR1020080084963A KR20090027146A (ko) | 2007-09-11 | 2008-08-29 | 서셉터, 반도체 제조 장치 및 반도체 제조 방법 |
US12/207,754 US20090068851A1 (en) | 2007-09-11 | 2008-09-10 | Susceptor, manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007235685A JP5038073B2 (ja) | 2007-09-11 | 2007-09-11 | 半導体製造装置および半導体製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009070915A true JP2009070915A (ja) | 2009-04-02 |
JP5038073B2 JP5038073B2 (ja) | 2012-10-03 |
Family
ID=40432328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007235685A Active JP5038073B2 (ja) | 2007-09-11 | 2007-09-11 | 半導体製造装置および半導体製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090068851A1 (ja) |
JP (1) | JP5038073B2 (ja) |
KR (1) | KR20090027146A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012084691A (ja) * | 2010-10-12 | 2012-04-26 | Toyota Motor Corp | 成膜装置と成膜装置用の支持台 |
US8999063B2 (en) | 2008-05-02 | 2015-04-07 | Nuflare Technology, Inc. | Susceptor, semiconductor manufacturing apparatus, and semiconductor manufacturing method |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5038365B2 (ja) * | 2009-07-01 | 2012-10-03 | 株式会社東芝 | サセプタおよび成膜装置 |
KR100965143B1 (ko) * | 2009-10-27 | 2010-06-25 | (주)앤피에스 | 서셉터 유닛 및 이를 구비하는 기판 처리 장치 |
JP2011171450A (ja) * | 2010-02-17 | 2011-09-01 | Nuflare Technology Inc | 成膜装置および成膜方法 |
JP5780062B2 (ja) * | 2011-08-30 | 2015-09-16 | 東京エレクトロン株式会社 | 基板処理装置及び成膜装置 |
JP6444641B2 (ja) * | 2014-07-24 | 2018-12-26 | 株式会社ニューフレアテクノロジー | 成膜装置、サセプタ、及び成膜方法 |
CN108346613A (zh) * | 2017-01-25 | 2018-07-31 | 上海新昇半导体科技有限公司 | 适用于单片式外延炉的分离式基座组件 |
CN113539914B (zh) * | 2021-06-28 | 2023-06-20 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其晶圆传输系统 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005340488A (ja) * | 2004-05-27 | 2005-12-08 | Matsushita Electric Ind Co Ltd | 電子デバイスの製造装置 |
JP2006344997A (ja) * | 2006-08-30 | 2006-12-21 | Hitachi Kokusai Electric Inc | 基板処理装置および基板処理方法 |
JP2007067394A (ja) * | 2005-08-05 | 2007-03-15 | Tokyo Electron Ltd | 基板処理装置およびそれに用いる基板載置台 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6001183A (en) * | 1996-06-10 | 1999-12-14 | Emcore Corporation | Wafer carriers for epitaxial growth processes |
JP2001522142A (ja) * | 1997-11-03 | 2001-11-13 | エーエスエム アメリカ インコーポレイテッド | 改良された低質量ウェハ支持システム |
US6068441A (en) * | 1997-11-21 | 2000-05-30 | Asm America, Inc. | Substrate transfer system for semiconductor processing equipment |
JP3234576B2 (ja) * | 1998-10-30 | 2001-12-04 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置におけるウェハ支持装置 |
JP4203206B2 (ja) * | 2000-03-24 | 2008-12-24 | 株式会社日立国際電気 | 基板処理装置 |
JP2002212729A (ja) * | 2001-01-17 | 2002-07-31 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
JP2003213421A (ja) * | 2002-01-21 | 2003-07-30 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US6776849B2 (en) * | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
US20050011459A1 (en) * | 2003-07-15 | 2005-01-20 | Heng Liu | Chemical vapor deposition reactor |
-
2007
- 2007-09-11 JP JP2007235685A patent/JP5038073B2/ja active Active
-
2008
- 2008-08-29 KR KR1020080084963A patent/KR20090027146A/ko not_active Application Discontinuation
- 2008-09-10 US US12/207,754 patent/US20090068851A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005340488A (ja) * | 2004-05-27 | 2005-12-08 | Matsushita Electric Ind Co Ltd | 電子デバイスの製造装置 |
JP2007067394A (ja) * | 2005-08-05 | 2007-03-15 | Tokyo Electron Ltd | 基板処理装置およびそれに用いる基板載置台 |
JP2006344997A (ja) * | 2006-08-30 | 2006-12-21 | Hitachi Kokusai Electric Inc | 基板処理装置および基板処理方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8999063B2 (en) | 2008-05-02 | 2015-04-07 | Nuflare Technology, Inc. | Susceptor, semiconductor manufacturing apparatus, and semiconductor manufacturing method |
JP2012084691A (ja) * | 2010-10-12 | 2012-04-26 | Toyota Motor Corp | 成膜装置と成膜装置用の支持台 |
Also Published As
Publication number | Publication date |
---|---|
KR20090027146A (ko) | 2009-03-16 |
JP5038073B2 (ja) | 2012-10-03 |
US20090068851A1 (en) | 2009-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2009270143A (ja) | サセプタ、半導体製造装置及び半導体製造方法 | |
JP5038073B2 (ja) | 半導体製造装置および半導体製造方法 | |
JP2010129764A (ja) | サセプタ、半導体製造装置および半導体製造方法 | |
US8535445B2 (en) | Enhanced wafer carrier | |
US8795435B2 (en) | Susceptor, coating apparatus and coating method using the susceptor | |
US9127374B2 (en) | Epitaxial growth method | |
US7699604B2 (en) | Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device | |
KR20070095198A (ko) | 기상성장방법과 기상성장장치 | |
JP2008277795A (ja) | エピタキシャル成長用サセプタ | |
JP5275935B2 (ja) | 半導体製造装置および半導体製造方法 | |
JP5513578B2 (ja) | サセプタ、半導体製造装置及び半導体製造方法 | |
JP5443096B2 (ja) | 半導体製造装置および半導体製造方法 | |
JP4933409B2 (ja) | 半導体製造装置および半導体製造方法 | |
JP5432608B2 (ja) | 半導体製造方法および半導体製造装置 | |
JP5271648B2 (ja) | 半導体製造方法および半導体製造装置 | |
KR101237091B1 (ko) | 반도체 제조 방법 | |
JP2010074037A (ja) | サセプタ、半導体製造装置および半導体製造方法 | |
JP5134311B2 (ja) | 半導体製造装置および半導体製造方法 | |
KR20110087440A (ko) | 반도체 제조용 서셉터 및 이를 포함하는 반도체 제조 장치 | |
JP2008066559A (ja) | 半導体製造方法及び半導体製造装置 | |
KR100729996B1 (ko) | 기판의 아웃개싱 방지장치 | |
JP2023096896A (ja) | 絶縁膜形成装置用トレー、絶縁膜形成装置および絶縁膜形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100315 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110209 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110215 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110418 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110614 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110914 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20110921 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20111118 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120530 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120705 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150713 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5038073 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |