JP5271648B2 - 半導体製造方法および半導体製造装置 - Google Patents
半導体製造方法および半導体製造装置 Download PDFInfo
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- JP5271648B2 JP5271648B2 JP2008242270A JP2008242270A JP5271648B2 JP 5271648 B2 JP5271648 B2 JP 5271648B2 JP 2008242270 A JP2008242270 A JP 2008242270A JP 2008242270 A JP2008242270 A JP 2008242270A JP 5271648 B2 JP5271648 B2 JP 5271648B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
12…ガス供給口
13…ガス排出口
14…整流板
15…回転駆動機構
16…サセプタ
17a…インヒータ
17b…アウトヒータ
18…リフレクター
19…突き上げシャフト
20…温度制御機構
21…ロボットハンド
Claims (4)
- 反応炉内に酸化膜が裏面に予め形成されたウェーハを搬入し、
前記反応炉内に設置され、前記ウェーハを載置するための突き上げシャフトを上昇させて、前記突き上げシャフト上に前記ウェーハを載置し、
前記突き上げシャフトを上昇させた状態で、前記ウェーハの中心温度と外周温度との差が、前記ウェーハの面内温度を900℃以上の成膜温度まで上昇させても前記ウェーハが凹状態のままとなる臨界温度差以上であり、かつ、前記外周温度より前記中心温度が高くなるように面内温度分布を制御して、前記ウェーハを凹状態として予備加熱を行い、
前記ウェーハが凹状態のまま、前記突き上げシャフトを下降させてサセプタ上に前記予備加熱された前記ウェーハの周縁部を載置し、
前記ウェーハを前記成膜温度となるように加熱し、
前記ウェーハを回転させ、
前記ウェーハ上にプロセスガスを供給することを特徴とする半導体製造方法。 - 前記成膜温度が1100℃以上の場合に、前記予備加熱時における前記臨界温度差を40℃以上とすることを特徴とする請求項1に記載の半導体製造方法。
- 酸化膜が裏面に予め形成されたウェーハが導入される反応炉と、
前記反応炉にプロセスガスを供給するためのガス供給機構と、
前記反応炉よりガスを排出するためのガス排出機構と、
前記ウェーハを上昇・下降させるために設けられ、予備加熱時に前記ウェーハを上昇させた状態で凹状態のまま載置する突き上げシャフトを有する上下駆動機構と、
前記ウェーハの周縁部を載置するサセプタと、
前記ウェーハを前記サセプタの下部より所定の温度に加熱するためのヒータと、
前記ヒータによる加熱を制御し、前記予備加熱時は、前記ウェーハの外周温度より中心温度が高く、かつ、前記中心温度と前記外周温度との差が、前記ウェーハの温度を900℃以上の成膜温度まで上昇させても前記ウェーハが凹状態のままとなる臨界温度差以上になるように前記ウェーハの面内温度分布を制御すると共に、前記プロセスガスの供給時は、前記ウェーハを前記成膜温度となるように制御する温度制御機構と、
前記ウェーハを回転させるための回転機構と、を備えることを特徴とする半導体製造装置。 - 前記成膜温度が1100℃以上の場合に、前記予備加熱時における前記臨界温度差を40℃以上とすることを特徴とする請求項3に記載の半導体製造装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008242270A JP5271648B2 (ja) | 2008-09-22 | 2008-09-22 | 半導体製造方法および半導体製造装置 |
US12/563,602 US20100075509A1 (en) | 2008-09-22 | 2009-09-21 | Manufacturing method and manufacturing apparatus for semiconductor device |
US14/698,031 US9552983B2 (en) | 2008-09-22 | 2015-04-28 | Manufacturing method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008242270A JP5271648B2 (ja) | 2008-09-22 | 2008-09-22 | 半導体製造方法および半導体製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010074038A JP2010074038A (ja) | 2010-04-02 |
JP5271648B2 true JP5271648B2 (ja) | 2013-08-21 |
Family
ID=42038109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008242270A Expired - Fee Related JP5271648B2 (ja) | 2008-09-22 | 2008-09-22 | 半導体製造方法および半導体製造装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US20100075509A1 (ja) |
JP (1) | JP5271648B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10559479B2 (en) | 2018-02-27 | 2020-02-11 | Toshiba Memory Corporation | Semiconductor manufacturing apparatus and manufacturing method of semiconductor device |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011129901A (ja) * | 2009-11-19 | 2011-06-30 | Mitsubishi Chemicals Corp | 半導体発光装置の製造方法 |
JP5615102B2 (ja) * | 2010-08-31 | 2014-10-29 | 株式会社ニューフレアテクノロジー | 半導体製造方法及び半導体製造装置 |
JP6248684B2 (ja) * | 2014-02-19 | 2017-12-20 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP6539929B2 (ja) | 2015-12-21 | 2019-07-10 | 昭和電工株式会社 | ウェハ支持機構、化学気相成長装置およびエピタキシャルウェハの製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06188198A (ja) * | 1992-12-17 | 1994-07-08 | Rohm Co Ltd | エピタキシャル成長法 |
US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
JP3563224B2 (ja) * | 1996-03-25 | 2004-09-08 | 住友電気工業株式会社 | 半導体ウエハの評価方法、熱処理方法、および熱処理装置 |
US6596086B1 (en) * | 1998-04-28 | 2003-07-22 | Shin-Etsu Handotai Co., Ltd. | Apparatus for thin film growth |
US6462310B1 (en) * | 1998-08-12 | 2002-10-08 | Asml Us, Inc | Hot wall rapid thermal processor |
JP3437118B2 (ja) * | 1999-04-23 | 2003-08-18 | 東芝機械株式会社 | ウエーハ加熱装置及びその制御方法 |
US6444027B1 (en) * | 2000-05-08 | 2002-09-03 | Memc Electronic Materials, Inc. | Modified susceptor for use in chemical vapor deposition process |
JP2002043302A (ja) | 2000-07-26 | 2002-02-08 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2003273032A (ja) * | 2002-03-19 | 2003-09-26 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
US20060127067A1 (en) * | 2004-12-13 | 2006-06-15 | General Electric Company | Fast heating and cooling wafer handling assembly and method of manufacturing thereof |
US7789962B2 (en) * | 2005-03-31 | 2010-09-07 | Tokyo Electron Limited | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
TWI354320B (en) * | 2006-02-21 | 2011-12-11 | Nuflare Technology Inc | Vopor phase deposition apparatus and support table |
JP4262763B2 (ja) * | 2006-08-02 | 2009-05-13 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
-
2008
- 2008-09-22 JP JP2008242270A patent/JP5271648B2/ja not_active Expired - Fee Related
-
2009
- 2009-09-21 US US12/563,602 patent/US20100075509A1/en not_active Abandoned
-
2015
- 2015-04-28 US US14/698,031 patent/US9552983B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10559479B2 (en) | 2018-02-27 | 2020-02-11 | Toshiba Memory Corporation | Semiconductor manufacturing apparatus and manufacturing method of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US9552983B2 (en) | 2017-01-24 |
JP2010074038A (ja) | 2010-04-02 |
US20100075509A1 (en) | 2010-03-25 |
US20150228477A1 (en) | 2015-08-13 |
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