TWI406324B - Semiconductor manufacturing apparatus and semiconductor manufacturing method - Google Patents

Semiconductor manufacturing apparatus and semiconductor manufacturing method Download PDF

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TWI406324B
TWI406324B TW098109378A TW98109378A TWI406324B TW I406324 B TWI406324 B TW I406324B TW 098109378 A TW098109378 A TW 098109378A TW 98109378 A TW98109378 A TW 98109378A TW I406324 B TWI406324 B TW I406324B
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semiconductor manufacturing
gas
manufacturing apparatus
rectifying
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TW201005804A (en
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Hironobu Hirata
Shinichi Mitani
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Nuflare Technology Inc
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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Description

半導體製造裝置及半導體製造方法
本發明關於例如在半導體晶圓上加熱之同時，供給製程氣體(process gas)，高速旋轉之同時進行成膜的半導體製造裝置及半導體製造方法。
近年來，伴隨半導體裝置之低價化、高性能化要求，被要求膜厚均勻性之提升，微塵之減少，以及成膜工程中之高生產性。
作為滿足該要求的手法，於日本特開平11-67675號公報揭示：使用葉片式磊晶成膜裝置，高速旋轉之同時加熱進行成膜的方法。另外，使用例如Φ300mm之大口徑晶圓之同時，藉由高效率使用便宜之三氯矽烷(TCS)、二氯矽烷等之Cl系列氣體源(source gas)，更能期待生產性之提升。
但是，例如IGBT(絕緣閘型雙極性電晶體)等所使用的超過150μm膜厚之磊晶膜之形成時，存在著難以獲得充分之生產性的問題。
本發明目的在於提供半導體製造裝置及半導體製造方法，其可以提升成膜速度，提升氣體源之利用效率，可獲得高的生產性。
本發明之一態樣之半導體製造裝置，係包含：反應室，被導入晶圓，用於進行成膜處理；旋轉體，於上部具備保持具，用於保持被導入之上述晶圓，於內部設有加熱上述晶圓的加熱器；旋轉驅動機構，被連接於旋轉體，用於旋轉晶圓；氣體供給機構，用於對反應室供給特定流量之製程氣體；氣體排出機構，用於由反應室排出氣體，控制反應室內成為特定壓力；及整流板，用於整流被供給之製程氣體，而供給至保持具所保持之晶圓上。另外，包含：環狀之整流片，設於整流板之下部，下端之內徑大於上端之內徑，用於使由晶圓上朝外周被排出的氣體，朝下方整流；及距離控制機構，進行控制以使整流板與晶圓之垂直距離、及整流片與旋轉體上面之垂直距離，分別成為特定距離。
本發明之半導體製造方法，係包含：於反應室內保持晶圓；控制反應室內成為特定壓力；加熱、旋轉晶圓之同時，由上方整流製程氣體供給至晶圓上；使包含多餘之製程氣體及由製程氣體產生之反應副生成物的排氣，藉由晶圓之旋轉而由晶圓上朝外周方向被排出。另外，包含：使朝外周方向被排出的排氣之往晶圓上之逆流量成為特定量的方式，至少進行晶圓之周邊上之空間之高度控制；使排氣，於晶圓之周邊上以特定傾斜整流而朝下方排出。本發明之目的及優點可由以下詳細說明予以理解
以下參照圖面說明本發明之實施形態。
(第1實施形態)
圖1為本實施形態之半導體製造裝置之斷面。在進行晶圓w之成膜處理的反應室11設置旋轉體12。旋轉體12之上部設有保持具13用於保持被導入之晶圓，於其下部設有環部14用於支撐13。於該環部14之內部設有加熱晶圓的內加熱器15a、外加熱器15b等。
於旋轉體12之外周設有反射板16，用於反射被放射之熱，提升熱效率。該旋轉體12，係介由反應室11下部之開口部，連接於使晶圓w旋轉的旋轉驅動機構17。
於反應室11上部配置，連接於控制氣體種及其流量的機構(未圖示)，對反應室11供給特定流量之製程氣體的氣體供給口18。於反應室11下部設置，連接於壓力計(未圖示)、泵(未圖示)等，由反應室11排出氣體，控制反應室11內成為特定壓力的氣體排出口19。
於旋轉體12上方設有整流板20，用於整流被供給之製程氣體而供給至晶圓上，其和覆蓋反應室11之壁面的套筒21呈一體化。於整流板20下部被固定有，下端之內徑大於上端之內徑、由例如石英形成，使由晶圓w上朝外周方向被排出之氣體，朝下方整流的環狀之整流片22。
和整流板20、整流片22呈一體化的套筒21，係被連接於色於反應室11外部的升降機構23，藉由使套筒21升降，可使晶圓上之空間之高度、亦即整流板20與晶圓間之垂直距離，及晶圓周邊上之空間之高度、亦即整流片22與旋轉體12上面間之垂直距離，分別成為特定距離而予以控制。
使用此種半導體製造裝置，例如於矽晶圓上形成矽磊晶膜。例如Φ200mm之晶圓w被導入反應室11，載置於保持具13上。藉由套筒21之下降，使整流板20與晶圓、及整流片22與旋轉體12上面以同一變化量接近，成為特定距離而被控制。藉由內加熱器15a、外加熱器15b，控制晶圓w之溫度成為110℃。藉由旋轉驅動機構17使晶圓w以例如900rpm旋轉。
由氣體供給口18，使例如TCS濃度成為2.5%被調製而成的製程氣體，以例如50SL M被導入。製程氣體係介由整流板20以整流狀態被供給至晶圓w上，於晶圓w上成長矽磊晶膜。
圖2A為習知氣體流動之模式圖。被供給至晶圓w上，包含多餘之TCS的製程氣體、稀釋氣體、反應副生成物、亦即HCl等之氣體(排氣)，係如箭頭所示，藉由晶圓w之旋轉朝外周方向被排出。但是，此時，一部分氣體因為對流等而逆流至晶圓w上。
使用Cl系列氣體源(souce gas)的磊晶成長中例如使用TCS時，被供給TCS與H2 時，
SiHCl3 ＋H2 →Si＋3HCl‧‧‧‧‧‧(1)
之反應朝右側被進行，矽磊晶膜被形成。但是和Si同時亦生成HCl。如(1)所示之反應，係由多數反應構成之平衡反應，因此，若應被排出之HCl逆流，氣體不被替換時，晶圓w上之HCl克分子比變高，平衡會朝左側位移。如此則，會抑制Si之生成反應之進行，磊晶成長率會變低。
因此，藉由抑制氣體之逆流，可以抑制磊晶成長率之降低。因此，如圖2B所示，於晶圓w周邊上設置整流片22，使整流朝下方排出，可以抑制某種程度之氣體逆流，黏性流，係在和壓力呈反比例的製程氣體中之分子之平均自由工程(mean free path)λ，充分小於反應室11之尺寸L時被形成。反應室11內被控制成為例如約1333Pa(10Torr)以上時，於反應室11內產生黏性流。
黏性流被形成時，藉由整流片22使和保持具13等之間隙變窄，增大黏性阻抗。黏性阻抗之增大，可以朝外周方向之流量。外周方向之流量與逆流量之差，係和製程氣體之供給量大略一致而為一定，因此藉由抑制外周方向之流量，可以抑制逆流量。
設置此種整流片22時，逆流量，係依存於整流板20與晶圓之垂直距離，及整流片22與旋轉體12上面之垂直距離。並非水平距離，而是藉由縮小垂直距離，可增大黏性阻抗，可抑制逆流。
例如整流板20與晶圓之垂直距離設為約40%，則逆流量可減少約40%。另外，整流片22與旋轉體12上面之垂直距離設為約1/14，則逆流量可抑制為1/3以下。
欲將晶圓w搬至、載置於保持具13上時，須將整流片22下端設為較晶圓w之上面某一程度之更上方。固定整流片22時，欲縮小垂直距離會有其構造之限制，因此將晶圓w載置於保持具13之後，藉由下降整流板20、整流片22，可縮小垂直距離。
使整流片22縮小垂直距離而予以設置，則逆流可以抑制為未設置整流片22時之約40%，因此，磊晶成長率可提升約4%。
於整流片22流入製程氣體，產生沈積物。藉由抑制逆流，可以抑制整流片22產生之沈積物引起之微塵之附著於晶圓w上。另外，可抑制逆流引起之對晶圓w上之製程氣體之流動之影響，膜厚於晶圓面內之均勻性可提升約2%。
另外，氣體之逆流量亦依存於旋轉數，伴隨旋轉數之增大而增大。此乃因為，高速旋轉會產生離心力，朝外周方向之流量變大。基於製程而增大旋轉數時，逆流量亦增大，成膜速度等會變動，而有無法確保製程餘裕度之問題。
此情況下，依據製程程序(process recipe)，氣體之供給量保持一定，欲增大旋轉數時使整流板20、整流片22下降，欲縮少旋轉數時使整流板20、整流片22上升。如此則，對應於旋轉數控制垂直距離，可以保持逆流量於一定，確保製程餘裕度。
本實施形態中，於旋轉體12之外周，設置使放射之熱反射而提升熱效率的反射板16。逆流量，亦依存於反射板16與整流片22間之距離。因此，欲抑制逆流量時，抑制反射板16與整流片22間之距離亦有效。反射板16之上端突出於保持具13等旋轉體12上面時，反射板16與旋轉體12上面之間會產生對流。因此，須以不突出旋轉體12上面的方式設置。
(第2實施形態)
圖3為本實施形態之半導體製造裝置之斷面。反應室11之構成係和第1實施形態大略同樣，不同點在於升降機構33並非連接於套筒21，而是連接於旋轉體32。
使用此種半導體製造裝置，和第1實施形態同樣，例如可於矽晶圓上形成矽磊晶膜，獲得和第1實施形態同樣效果。
另外，設於旋轉體32內部的內加熱器15a、外加熱器15b等，為抑制加熱條件之變動，較好是併同升降。另外，反射板16，就熱反射效率之變動、逆流量抑制觀點而言，較好是和旋轉體32同時升降。
(第3實施形態)
圖4為本實施形態之半導體製造裝置之斷面。反應室11之構成係和第1實施形態大略同樣，不同點在於升降機構43並非與套筒41，而是與套筒41呈分離，連接於與整流片42呈一體化的整流板40。升降機構43，係藉由波紋管配管等被連接的多數(例如3個)軸承43a被連接於整流板40，可升降。
使用此種半導體製造裝置，和第1實施形態同樣，例如可於矽晶圓上形成矽磊晶膜，獲得和第1實施形態同樣效果。
(第4實施形態)
圖5為本實施形態之半導體製造裝置之斷面。反應室11之構成係和第1實施形態大略同樣，不同點在於升降機構53並非連接於套筒51，而是連接於與整流板50呈分離的整流片52。因此，雖無法升降整流板50，但可以控制最有助於逆流量之抑制的整流片52與旋轉體12上面之距離，可以簡單構造獲得效果。升降機構53，係藉由波紋管配管等被連接的多數(例如3個)軸承53a被連接於整流板50，可升降。
使用此種半導體製造裝置，和第1實施形態同樣，例如可於矽晶圓上形成矽磊晶膜，獲得和第1實施形態同樣效果。
於彼等實施形態中，整流片之斷面形狀係設為大略矩形之環狀，但亦可填充如圖6所示和套筒間之間隙。整流片設為填充材一體化之體積狀(bulk)亦可。不使用套筒之構造情況下，係被填充於反應室之間。藉由填充此種熱傳導率高的填充劑，整流片22被冷卻至例如約600℃，整流片表面不容易產生沈積物。
另外，整流片，藉由例如SiC或以SiC覆蓋碳而成的材料，如此則，可以具備作為反射板之功能，可反射加熱器之放出之熱，可提升加熱器之加熱效率。另外，藉由感應加熱彼等，可以具備作為加熱器之功能，可以有效抑制晶圓周緣部之放熱。
藉由彼等實施形態，可提升成膜速度、提升氣體源之利用效率，可於半導體晶圓w上以高的生產性形成磊晶膜等之膜。另外，晶圓良品率之提升之同時，經由元件形成工程及元件分離工程而形成之半導體裝置之良品率之提升，元件特性之穩定等可以被實現。
特別是，藉由適用於N型基極區域、P型基極區域、或絕緣分離區域等需要成長100μm以上膜厚等之，功率MOSFET或IGBT等之功率半導體裝置之磊晶形成工程，可以獲得良好的元件特性。
另外，於彼等功率半導體，可以適用於特別是如圖7所示超接合(super junction)構造之形成。於此種超接合構造之形成，係形成p型磊晶膜之後，藉由微影成像技術法形成微細溝，於溝內形成n型磊晶膜，但藉由逆流量之抑制，於微細溝中可以不滯流而以理想之整流狀態形成磊晶膜，因此可形成良好的超接合構造。
另外，本實施形態中，磊晶膜雖形成於矽基板上，但亦可適用於多晶矽層之形成，亦可適用於其他復合半導體例如GaAs層、GaAlAs層、及I nGaAs層。另外，亦可適用於SiO2 薄膜、Si3 N4 薄膜之形成。SiO2 薄膜之形成時，係被供給SiH4 及N2 、O2 、Ar氣體，Si3 N4 薄膜之形成時，係被供給SiH4 及NH3 、N2 、O2 、Ar氣體。
以上係依據實施形態具體說明本發明，但本發明並不限定於上述實施形態，在不脫離其要旨情況下可做各種變更實施。
11．．．反應室
12．．．旋轉體
13．．．保持具
14．．．環部
15a‧‧‧內加熱器
15b‧‧‧外加熱器
16‧‧‧反射板
17‧‧‧旋轉驅動機構
18‧‧‧氣體供給口
19‧‧‧氣體排出口
20‧‧‧整流板
21‧‧‧套筒
22‧‧‧整流片
23‧‧‧升降機構
32‧‧‧旋轉體
33‧‧‧升降機構
40‧‧‧整流板
41‧‧‧套筒
42‧‧‧整流片
43‧‧‧升降機構
50‧‧‧整流板
51‧‧‧套筒
52‧‧‧整流片
53‧‧‧升降機構
53a‧‧‧軸承
w‧‧‧晶圓
圖1為本發明之一態樣之半導體製造裝置之斷面。
圖2A為習知氣體流動之圖。
圖2B為本發明之一態樣之氣體流動之圖。
圖3-圖5為本發明之一態樣之半導體製造裝置之斷面。
圖6為本發明之一態樣之整流片構造之斷面。
圖7為本發明之一態樣之超接合構造之斷面。
11．．．反應室
12．．．旋轉體
13．．．保持具
14．．．環部
15a．．．內加熱器
15b．．．外加熱器
16．．．反射板
17．．．旋轉驅動機構
18．．．氣體供給口
19．．．氣體排出口
20．．．整流板
21．．．套筒
22．．．整流片
23．．．升降機構
w．．．晶圓

Claims (20)

  1. 一種半導體製造裝置，其特徵為具備：反應室，被導入晶圓，用於進行成膜處理，在該頂部具備有氣體供給口且在該底部具備有氣體排出口；旋轉體，於上部具備保持具，用於保持被導入之上述晶圓，於內部設有加熱上述晶圓的加熱器；旋轉驅動機構，被連接於上述旋轉體，用於旋轉上述晶圓；氣體供給機構，用於對上述反應室供給特定流量之製程氣體，藉由化學反應來進行成膜；氣體排出機構，用於由上述反應室排出氣體，控制上述反應室內成為特定壓力；整流板，用於整流被供給之上述製程氣體，而供給至上述保持具所保持之上述晶圓上；環狀之整流片，設於上述整流板之下部，下端之內徑大於上端之內徑，且上述下端配置於比上述保持具表面更下方的位置，藉此將由上述晶圓上被排出的氣體朝外周整流；及連接於上述整流片之距離控制機構，進行控制以使上述整流板與上述晶圓之垂直距離、及上述整流片與上述旋轉體上面之垂直距離，分別成為特定距離。
  2. 如申請專利範圍第1項之半導體製造裝置，其中上述距離控制機構，係使上述整流片或上述旋轉體朝上下。
  3. 如申請專利範圍第1項之半導體製造裝置，其中依據上述旋轉驅動機構之旋轉數來進行上述距離控制機構之控制。
  4. 如申請專利範圍第1項之半導體製造裝置，其中上述整流片，係連接於上述整流板。
  5. 如申請專利範圍第2項之半導體製造裝置，其中上述距離控制機構，係使上述整流板朝上下。
  6. 如申請專利範圍第1項之半導體製造裝置，其中具備近接上述反應室壁被設置的套筒。
  7. 如申請專利範圍第6項之半導體製造裝置，其中上述整流片，係和上述套筒呈一體化。
  8. 如申請專利範圍第7項之半導體製造裝置，其中上述距離控制機構，係使上述套筒朝上下。
  9. 如申請專利範圍第7項之半導體製造裝置，其中上述整流片與上述套筒之間被填充。
  10. 如申請專利範圍第1項之半導體製造裝置，其中上述整流片，係具有導電體，連接於電壓施加機構，被感應加熱。
  11. 如申請專利範圍第1項之半導體製造裝置，其中作為上述整流片，係使用SiC或以SiC覆蓋碳而成的材料。
  12. 如申請專利範圍第1項之半導體製造裝置，其中作為上述整流片，係反射板用於反射加熱器放出之熱。
  13. 如申請專利範圍第1項之半導體製造裝置，其中於上述旋轉體之外周具備反射板。
  14. 一種半導體製造方法，其特徵為：於反應室內保持晶圓；控制上述反應室內成為特定壓力；加熱、旋轉上述晶圓之同時，由上方整流製程氣體供給至上述晶圓上；使包含多餘之上述製程氣體及由上述製程氣體產生之反應副生成物的上述晶圓上之排氣，藉由上述晶圓之旋轉而由上述晶圓上朝外周方向被排出；使朝外周方向被排出的上述排氣之往上述晶圓上之逆流量成為特定量的方式，至少進行上述晶圓之周邊上之空間之高度控制；使上述排氣，於上述晶圓之周邊上以特定傾斜整流而朝下方排出。
  15. 如申請專利範圍第14項之半導體製造方法，其中上述晶圓上之空間之高度，係和上述晶圓之周邊上之空間之高度以同一變化量被控制。
  16. 如申請專利範圍第14項之半導體製造方法，其中僅上述晶圓之周邊上之空間之高度被控制。
  17. 如申請專利範圍第14項之半導體製造方法，其中 依據上述晶圓之旋轉數，使上述晶圓及上述晶圓之周邊上形成的空間之高度被控制。
  18. 如申請專利範圍第14項之半導體製造方法，其中由上述晶圓之周邊上進行冷卻。
  19. 如申請專利範圍第14項之半導體製造方法，其中由上述晶圓之周邊上進行加熱。
  20. 如申請專利範圍第14項之半導體製造方法，其中由上述晶圓之周邊上使放出之熱被反射。
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