TWI527179B - 藉由通孔垂直互連三維電子模組之方法 - Google Patents

藉由通孔垂直互連三維電子模組之方法 Download PDF

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TWI527179B
TWI527179B TW097140944A TW97140944A TWI527179B TW I527179 B TWI527179 B TW I527179B TW 097140944 A TW097140944 A TW 097140944A TW 97140944 A TW97140944 A TW 97140944A TW I527179 B TWI527179 B TW I527179B
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wafer
hole
stack
track
curved section
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TW097140944A
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TW200941686A (en
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克里斯汀 佛
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３Ｄ波拉斯公司
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Description

藉由通孔垂直互連三維電子模組之方法
本發明的領域係為3D(三維)電子模組的製造，尤其是它們的垂直互連。
3D電子模組包含電子晶圓層面一堆疊，其使用堆疊的橫向面以三維互連而在晶圓層面之間產生連接。
已知藉由位在堆疊的橫向面上(即、晶圓層面的邊緣上)之導體將晶圓層面電連接在一起。存在於橫向面上之導體數目因此受限於該面的面積。
而且，想要能夠共同製造3D模組以降低他們的成本。
結果，目前存在有製造同時符合所有上述要求的3D電子模組之方法的需要，也就是說，在晶圓層面和共同製造之間的電連接數目增加。
典型上以間距200μm隔開這些導體。存在於橫向面上之導體數目因此受限於間距所分割之橫向面的面積。
本發明的原則係分割導體的間距。藉由在電子模組中產生通孔卻不受限於其橫向面而獲得此。
尤其是，本發明的目的係垂直互連3D電子模組之方法，n為大於1的一整數，一模組包含K電子晶圓層面的一堆疊，一晶圓層面i，i從1至K變化，包含至少一電子組件，藉由位於沿著堆疊的方向之導體將K晶圓層面電連接在一起，及針對各個晶圓層面i包含一第一步驟，第一步驟包含：
A)製造步驟，製造一批n晶圓層面，一晶圓層面包含由切割線所限制之至少n幾何特徵，各個特徵被設置有至少一電子組件，電子組件被絕緣樹脂圍住並且連接至電連接墊片，墊片連接到沈積在一介電層上的電連接軌道。主要其中各個軌道延伸遠至一電極，電極互連軌道並且位在切割線上；及包含一彎曲段，位在兩直線段之間，彎曲段定義一區域，區域圍住想要形成一通孔的一位置，此區域位在連接墊片和軌道互連電極之間，
B)堆疊和組裝在第一步驟之後所獲得的K晶圓層面，以將該區域疊置成約一個疊置在另一個的頂部上；
C)沿著堆疊的方向之樹脂中以及與通孔的位置垂直之樹脂的整個厚度上鑽出通孔，通孔的剖面係成為，就各個晶圓層面而言，直線段與通孔齊平，但是未與彎曲段齊平；
D)藉由電解質生長將通孔的壁金屬化；及
E)沿著切割線截割該堆疊，截割的寬度大於電極的寬度，以獲得n 3D電子模組。
較佳的是，直線段的至少其中之依據有一突起在該區域內部。
圖20圖示其例子之一3D模組100包含K電子晶圓層面19的一堆疊。i從1到K之晶圓層面i包含至少一電子元件在一絕緣基板上。藉由位在堆疊中的導體將K晶圓層面電連接在一起。K例如等於4，但是典型上在2和100之間變化。
本發明係相關於n模組(n位在2和500之間)的製造，此製造是共同的。
製造包含以下步驟：在一個且相同的晶圓上製造一批n電子晶圓層面，將此步驟重複K次；接著堆疊K晶圓；在欲連接晶圓層面在一起之堆疊的厚度中形成金屬化通孔；及切割堆疊，藉以獲得3D模組。
現在將說明3D模組的例示實施例。
方法的第一階段包含：獲得未包括有缺陷的組件(或晶片)之晶圓，這些晶圓被稱作KGRW(已知良好重建晶圓)。此階段包含去除、顛倒、及定位選定的晶片在晶圓上之步驟。電子組件可以是主動組件，諸如裸晶片等，或被動組件或MEMS(微電機械系統)。被動組件可位在晶圓中或晶圓上。
圖1圖示沈積在例如矽晶圓的晶圓1中所形成之晶片6的活性面2上之UV(紫外線)重疊膜3。此膜的功能不僅保護其活性面2，並且也在使晶圓1變薄和被處理時讓晶圓1變硬。
圖2為在晶圓1變薄之後的矽晶圓1圖。以兩步驟完成變薄。首先機械重疊操作被用於使與活性面2之相對側上的晶圓變薄，其次，為了鬆弛在重疊操作期間所產生的應力，在變薄的表面上完成化學蝕刻操作。
圖3圖示接合至UV鋸開膜5的晶圓1，以及藉由照射之重疊膜3的去除。
圖4圖示所切割的矽晶片6。在未碎成碎片之下完成鋸開較佳，以容易完成下面步驟，即、去除、顛倒、及最佳化的定位。
圖5圖示上下顛倒地安裝在雙側黏附膜7上之晶片6。在先前以共同測試過晶片6，即、在切割它們之前，只有選定的晶片(已知良好晶粒)才安裝在具有定位特徵之膜7上。這是方法中的最緊要步驟之一。這是因為晶片被非常精確地去除、顛倒、及置放在膜上，以符合所需的校準容限。將膜7接合至支撐8。如此所獲得的就是KGRW。
圖6圖示藉由壓縮成形技術所產生的KGRW。此成形技術保證沒有移動材料，使得在成形之後維持晶片定位的精確性，例如在聚合樹脂9中。
從此步驟直到方法的結束，材料的最佳選擇基本上很重要。材料必須熱機械上彼此相容並且與方法的各種步驟熱相容。所有材料的熱膨脹係數必須彼此越接近越佳，以避免任何熱機械失配和最後的結果(變形、分層、龜裂等)，並且為與執行此方法之相關的所有溫度都必須如此。
去除矽晶圓8和黏附劑7。
圖7圖示重新安裝於例如矽支撐之另一支撐10上的KGRW，使得晶片6的活性面2面朝上。經由黏附劑17將KGRW接合至晶圓10。
圖8圖示構成產生RDL(再分配層)的第一步驟之KGRW上的感光成像介電11之沈積。此介電11的功能首先用於避免晶片和未來金屬軌道之間的短路，其次被使用當作熱機械緩衝層。藉由切割線14所限制之幾何特徵(n)形成在晶圓上。各個特徵包含至少一電子組件6(或晶片)，此電子組件6例如由矽製成，被絕緣樹脂9圍住並且連接到電連接墊片4。
圖9圖示完成的RDL，即、經由精於本技藝之人士所熟知的技術所產生之金屬軌道12所完成，此技術例如是：金屬化+遮罩+蝕刻或籽層+遮罩+選擇性銅鍍+籽層蝕刻。一方面，以將軌道12連接到晶片連接墊片4以及另一方面連接到互連軌道的電極13之此種方式設計圖9b及9d可見到的2D路由。這是例如銅電極。此電極13位在切割線14上。如稍後將見到一般，將在金屬化垂直互連通孔的步驟期間使用此電極13。各個軌道12係由位在圖9C可見到的兩直線段12b之間的彎曲段12a所形成。此彎曲段12a在絕緣體11中定義一區域15a，此區域15a圍住未來垂直通孔的位置，沿著1至n列置放位在晶片6和接合電極13之軌道的那端之間的此彎曲段，如圖9b及9c所示一般。此列彼此偏移較佳，如圖9b所見的俯視圖所見一般，以增加通孔數目。圖式圖示兩列在晶片6的各側上。彎曲軌道段12a可以是完全或局部圓形形狀(在圖式中是完全圓形的)或完全或局部橢圓或三角形或矩形或其他形狀，如圖17所示一般。較佳的是，在軌道的直線段12b和彎曲段12a之間的接合中，直線段稍微突出到區域15a內並且形成一突起12c。兩段12b都可突起，如圖9c、16b、17a、17b、17d、17f、及17g所見一般，或只有他們的其中之一突起，如圖17c及17e所見一般。
圖10圖示沈積在KGRW的上表面上之保護膜16，使最後的變薄操作能夠完成，去除矽晶圓10和黏附劑17。圖11所呈現的解決方案包含：在產生RDL之後使KGRW變薄。在一變形中，KGRW又可直接從想要的厚度成形，然後在產生RDL之後無須變薄。
圖11圖示完全變薄的KGRW。依據晶圓的厚度標準，重疊操作使所有的晶片6無論它們原有的厚度為何都能夠變薄。在圖11中，KGRW向下變薄到晶片6，以到達KGRW的最小厚度。其中一選擇包含維持樹脂9的厚度，在到達矽晶片6之前停止變薄操作。此額外的厚度或過度成形保證晶片較能夠承受熱應力期間所產生之曲率和張力的問題。
圖12圖示已去除保護膜16之後的KGRW。
圖13圖示沈積在KGRW上之黏附劑18。此黏附劑可以是雙側黏附膜或環氧型的液體黏附劑。當將KGRW向下變薄到晶片時，後者較佳，因為黏附劑以非常類似於壓縮成形期間所利用的樹脂之材料來提供一封裝。
在此第一階段之後，獲得欲堆疊的KGRW晶圓19。此階段被重複K次，K例如等於4但是典型上在2和100之間變化。
第二階段係相關於KGRW 19的堆疊。
圖14圖示KGRW的堆疊，一個在另一個頂部上。成形到KGRW內之特定的定位記號被用於精確地堆疊KGRW，使得定義為來通孔的位置彼此校準。安裝膜20被用來當作3D模組的堆疊之支撐。將上晶圓層面19的黏附劑18去除。
圖15圖示在堆疊中所鑽出的通孔15。依據欲鑽出的厚度尤其可採用幾個鑽孔技術(雷射乾蝕刻、電漿乾蝕刻、濕蝕刻等)。直接在堆疊上完成此步驟。電漿乾蝕刻使用包含幾個氣體的活性電漿：其中之一例如是O2 ，用以蝕刻樹脂；另一個例如是CF4 ，用以蝕刻樹脂的矽土；及第三個例如是氬，用以蝕刻齊平軌道段的銅。鑽出通孔15，以形成沒有突起之軌道的直線段12b之橫剖面，或留下直線段的突起12c，但在彎曲段12a內部仍然維持足以電隔離此軌道部12a之介電11的厚度。在第二例子中，介電厚度因此剛好小於直線段之突起12c的長度，如圖15b、16b、16c、及17所示。如稍後將看到一般，在金屬化通孔期間這些突起12c將扮演一重要角色。
圖16圖示現在被金屬化之相同已鑽出的通孔15。可以各種方式獲得此金屬化。根據第一實施例，藉由以化學或在真空下沈積附著於通孔的壁之薄金屬層(或籽層)而獲得金屬化。當通孔15的長度(與堆疊晶圓的數目及其厚度成比例)與它們的橫剖面之最大尺寸的比例R增加時，此技術變得越來越不可靠。當R>10時，金屬化沿著通孔不均勻分佈-未到達通孔的底部。因此此需要通孔放大，如此對其數目不利。有利的是，在不存在金屬籽層之下，例如藉由銅電鍍，透過電解作用將通孔填滿一導電金屬21。導電金屬21當然可以是銅，但也可以是鎳或金或銀或錫。藉由軌道的互連電極13，及然後藉由延伸遠至通孔之軌道的段，而在通孔15中供應電流。圖16c所示之通孔和軌道段典型上具有下面尺寸：電極13具有約40μm的寬度，直線段12b具有約20μm的寬度，及突起12c具有約10μm的寬度和約25μm的長度，彎曲段12a具有約5μm的寬度，連接墊片4具有約60μm×60μm的面積，位置15a內的介電11具有約15μm的厚度，及通孔具有約80μm的長度和約40μm的寬度。圖17a至17h圖示通孔的形狀之各種例子，彎曲段和具有突起的直線段：具有有著兩突起12c之環形軌道的橢圓通孔(圖17a)；具有兩突起12c(圖17b及17d)或一突起12c(圖17c)之半環軌道；具有有著兩突起12c(圖17f)或一突起12c(圖17e)之半環的三角通孔；具有有著兩突起12c(圖17g)之半環的矩形通孔。當具有兩段突起12c時，具有兩倍垂直連接的機會；若只具有一段突起12c，則此增加液體電解質22的流動容積。根據圖17h所示的變形，通孔15被形成留下一局部限制，以將沿著X及Y方向的銅鍍生長侷限到沿著Z方向的生長輪廓，即、在堆疊的方向。圖16b、16c、及16d圖解經過一段時間的銅電鍍之方法-金屬化從段剖面12c生長。計算此電解作用的持續期間，以達成垂直連接一晶圓19到另一晶圓。此電連接因此對下面通孔是沒問題的，這些通孔的橫剖面之最大尺寸為40μm至80μm，及長度為500μm至800μm，即、10至15的比例R。
圖18圖示在其上沈積保護性聚合物層23以保護軌道12之KGRW 19的垂直連接堆疊。
圖19圖示切割KGRW的堆疊以獲得3D模組。以類似於切割單一晶圓之方法的方法，沿著切割線14完成切割。截割的寬度大於軌道互連電極13的寬度，以避免未來3D模組的軌道之間的短路。在此技術中，沿著列1到n所置放的金屬化通孔15與切割線14分開。
圖20圖示剝離安裝膜20之最後的3D模組。
R．．．比例
1．．．晶圓
2．．．活性面
3．．．紫外線重疊膜
4．．．連接墊片
5．．．紫外線鋸開膜
6．．．晶片
7．．．雙側黏附膜
8．．．支撐
9．．．聚合樹脂
10．．．支撐
11．．．介電
12．．．軌道
12a．．．彎曲段
12b．．．直線段
12c．．．突起
13．．．電極
14．．．切割線
15．．．通孔
15a．．．區域
16．．．保護膜
17．．．黏附劑
18．．．黏附劑
19．．．電子晶圓層面
20．．．安裝膜
21．．．導電金屬
22．．．液體電解質
23．．．保護性聚合物層
100．．．三維電子模組
經由閱讀下面參考附圖以及非限制性的例子之詳細說明將使本發明的其他特徵和優點更加明顯，其中：
-圖1為將膜沈積在晶圓的活性面上之步驟的概要圖；
-圖2為使晶圓變薄的步驟之概要圖；
-圖3為沈積黏附膜的步驟之概要圖；
-圖4為所切割的晶片之概要圖；
-圖5為將晶片移轉到黏附膜上的步驟之概要圖；
-圖6為將晶片封裝到樹脂中的步驟之概要圖；
-圖7為KGRW概要圖；
-圖8為沈積介電層的步驟之概要圖；
-圖9為生產再分配層的步驟之概要圖，該步驟又稱作2D路由步驟；
-圖10為沈積用以保護再分配層之保護層的步驟之概要圖；
-圖11為使KGRM變薄的步驟之概要圖；
-圖12為去除保護層的步驟之概要圖；
-圖13為沈積黏附膜的步驟之概要圖；
-圖14為堆疊幾個KGRM的步驟之概要圖；
-圖15為鑽出通孔的步驟之概要圖；
-圖16為金屬化通孔的步驟之概要圖；
-圖17為軌道的通孔和彎曲段之各種例示實施例的概要圖；
-圖18為在最後晶圓的軌道上沈積保護層之步驟的概要圖；
-圖19為切割堆疊的步驟之概要圖；及
-圖20為3D模組之概要圖。
從一圖式到另一圖式，以相同參考號碼識別相同元件。

Claims (8)

  1. 一種垂直互連n 3D電子模組(100)之製造方法，n為大於1的一整數，各該3D電子模組模組包含K電子晶圓層面(19)的一堆疊，一晶圓層面i，i係從1至K變化的整數，K係整數，包含至少一電子組件(6)，藉由位於沿著該堆疊的方向之導體將該K晶圓層面電連接在一起，且該方法包含：一第一步驟，針對各該晶圓層面i，該第一步驟包含：A1)製造步驟A1，製造一批n晶圓層面(19)，一晶圓層面(19)包含由切割線(14)所限制之至少n幾何特徵，各該幾何特徵被設置有至少一電子組件(6)，該電子組件(6)被絕緣樹脂(9)圍住並且連接至電連接墊片(4)，該墊片連接到沈積在一介電層(11)上的電連接軌道(12)，其中各該軌道(12)延伸遠至一電極(13)，該電極(13)互連該軌道並且位在該切割線(14)上；及包含一彎曲段(12a)，位在兩直線段(12b)之間，該彎曲段(12a)定義一區域(15a)，該區域(15a)圍住想要形成一通孔的一位置，此區域位在該連接墊片(4)和該軌道互連電極(13)之間，及A2)重覆該步驟A1，K次，以得到K晶圓層面；以及一第二步驟包含：B)堆疊和組裝在該第一步驟之後所獲得的該K 晶圓層面(19)，以將該區域(15a)疊置成約一個疊置在另一個的頂部上；C)沿著該堆疊的該方向之該樹脂(9)中以及與該通孔的該位置垂直之該樹脂(9)的該整個厚度上鑽出通孔(15)，該通孔的該剖面係成為，就各該晶圓層面(19)而言，該直線段(12b)與該通孔(15)齊平，但是未與該彎曲段(12a)齊平；D)藉由電解質生長將該通孔(15)的壁金屬化；及E)沿著該切割線(14)截割該堆疊，該截割的該寬度大於該電極(13)的該寬度，以獲得該n 3D電子模組(100)。
  2. 根據申請專利範圍第1項之方法，其中該通孔的該金屬是銅或鎳或金或銀或錫。
  3. 根據申請專利範圍第1項之方法，其中該直線段的至少其中之一具有一突起(12c)在該區域(15a)內部。
  4. 根據申請專利範圍第1項之方法，其中該彎曲段(12a)是一圓弧或一圓形，一橢圓弧或一橢圓，一半三角形或一三角形，或一半矩形或一矩形。
  5. 根據申請專利範圍第1項之方法，其中該電子組件是一主動或被動組件或MEMS(微電機械系統)。
  6. 根據申請專利範圍第1項之方法，其中至少一被動組件位在該晶圓中或該晶圓上。
  7. 根據申請專利範圍第1至6項任一項之方法，其中該通孔係由雷射乾蝕刻或電漿乾蝕刻所形成。
  8. 根據申請專利範圍第1至6項任一項之方法，其中該通孔係由濕蝕刻所形成。
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EP2053646A1 (fr) 2009-04-29
US20090260228A1 (en) 2009-10-22
EP2053646B1 (fr) 2010-08-18
TW200941686A (en) 2009-10-01
JP5621155B2 (ja) 2014-11-05
FR2923081A1 (fr) 2009-05-01
FR2923081B1 (fr) 2009-12-11
JP2009111384A (ja) 2009-05-21
US8567051B2 (en) 2013-10-29

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