FR2857157B1 - Procede d'interconnexion de composants actif et passif et composant heterogene a faible epaisseur en resultant - Google Patents

Procede d'interconnexion de composants actif et passif et composant heterogene a faible epaisseur en resultant

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Publication number
FR2857157B1
FR2857157B1 FR0307977A FR0307977A FR2857157B1 FR 2857157 B1 FR2857157 B1 FR 2857157B1 FR 0307977 A FR0307977 A FR 0307977A FR 0307977 A FR0307977 A FR 0307977A FR 2857157 B1 FR2857157 B1 FR 2857157B1
Authority
FR
France
Prior art keywords
components
support
passive components
low thickness
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0307977A
Other languages
English (en)
Other versions
FR2857157A1 (fr
Inventor
Christian Val
Olivier Lignier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3D Plus SA
Original Assignee
3D Plus SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3D Plus SA filed Critical 3D Plus SA
Priority to FR0307977A priority Critical patent/FR2857157B1/fr
Priority to US10/562,685 priority patent/US7635639B2/en
Priority to EP04766105A priority patent/EP1642336A1/fr
Priority to PCT/EP2004/051314 priority patent/WO2005004237A1/fr
Publication of FR2857157A1 publication Critical patent/FR2857157A1/fr
Application granted granted Critical
Publication of FR2857157B1 publication Critical patent/FR2857157B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
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    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
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    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
FR0307977A 2003-07-01 2003-07-01 Procede d'interconnexion de composants actif et passif et composant heterogene a faible epaisseur en resultant Expired - Lifetime FR2857157B1 (fr)

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FR0307977A FR2857157B1 (fr) 2003-07-01 2003-07-01 Procede d'interconnexion de composants actif et passif et composant heterogene a faible epaisseur en resultant
US10/562,685 US7635639B2 (en) 2003-07-01 2004-06-30 Method for the interconnection of active and passive components and resulting thin heterogeneous component
EP04766105A EP1642336A1 (fr) 2003-07-01 2004-06-30 Procede d interconnexion de composants actif et passif et co mposant heterogene a faible epaisseur en resultant
PCT/EP2004/051314 WO2005004237A1 (fr) 2003-07-01 2004-06-30 Procede d'interconnexion de composants actif et passif et composant heterogene a faible epaisseur en resultant

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FR2884049B1 (fr) * 2005-04-01 2007-06-22 3D Plus Sa Sa Module electronique de faible epaisseur comprenant un empilement de boitiers electroniques a billes de connexion
FR2894070B1 (fr) * 2005-11-30 2008-04-11 3D Plus Sa Sa Module electronique 3d
FR2895568B1 (fr) * 2005-12-23 2008-02-08 3D Plus Sa Sa Procede de fabrication collective de modules electroniques 3d
AT503191B1 (de) 2006-02-02 2008-07-15 Austria Tech & System Tech Leiterplattenelement mit wenigstens einem eingebetteten bauelement sowie verfahren zum einbetten zumindest eines bauelements in einem leiterplattenelement
US8420505B2 (en) * 2006-03-25 2013-04-16 International Rectifier Corporation Process for manufacture of thin wafer
FR2905198B1 (fr) * 2006-08-22 2008-10-17 3D Plus Sa Sa Procede de fabrication collective de modules electroniques 3d
FR2911995B1 (fr) * 2007-01-30 2009-03-06 3D Plus Sa Sa Procede d'interconnexion de tranches electroniques
FR2917234B1 (fr) 2007-06-07 2009-11-06 Commissariat Energie Atomique Dispositif multi composants integres dans une matrice semi-conductrice.
FR2917236B1 (fr) 2007-06-07 2009-10-23 Commissariat Energie Atomique Procede de realisation de via dans un substrat reconstitue.
FR2923081B1 (fr) * 2007-10-26 2009-12-11 3D Plus Procede d'interconnexion verticale de modules electroniques 3d par des vias.
FR2934082B1 (fr) 2008-07-21 2011-05-27 Commissariat Energie Atomique Dispositif multi composants integres dans une matrice
FR2940521B1 (fr) 2008-12-19 2011-11-11 3D Plus Procede de fabrication collective de modules electroniques pour montage en surface
FR2943176B1 (fr) 2009-03-10 2011-08-05 3D Plus Procede de positionnement des puces lors de la fabrication d'une plaque reconstituee
FR2947948B1 (fr) 2009-07-09 2012-03-09 Commissariat Energie Atomique Plaquette poignee presentant des fenetres de visualisation
FR2985367A1 (fr) * 2011-12-29 2013-07-05 3D Plus Procede de fabrication collective de modules electroniques 3d ne comportant que des pcbs valides
US11213690B2 (en) 2012-06-15 2022-01-04 Medtronic, Inc. Wafer level packages of high voltage units for implantable medical devices
US8824161B2 (en) 2012-06-15 2014-09-02 Medtronic, Inc. Integrated circuit packaging for implantable medical devices
FR3048123B1 (fr) 2016-02-19 2018-11-16 3D Plus Procede d'interconnexion chip on chip miniaturisee d'un module electronique 3d
FR3053158B1 (fr) 2016-06-22 2018-11-16 3D Plus Procede de fabrication collective de modules electroniques 3d configures pour fonctionner a plus d'1 ghz
CN112928077A (zh) * 2021-01-20 2021-06-08 上海先方半导体有限公司 一种多芯片异质集成封装单元及其制造方法、堆叠结构

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US7635639B2 (en) 2009-12-22
FR2857157A1 (fr) 2005-01-07
EP1642336A1 (fr) 2006-04-05
WO2005004237A1 (fr) 2005-01-13

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