TWI509810B - 薄膜電晶體及其製造方法與液晶顯示裝置 - Google Patents
薄膜電晶體及其製造方法與液晶顯示裝置 Download PDFInfo
- Publication number
- TWI509810B TWI509810B TW099124143A TW99124143A TWI509810B TW I509810 B TWI509810 B TW I509810B TW 099124143 A TW099124143 A TW 099124143A TW 99124143 A TW99124143 A TW 99124143A TW I509810 B TWI509810 B TW I509810B
- Authority
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- Taiwan
- Prior art keywords
- film
- amorphous germanium
- transistor
- electrode
- forming
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 46
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010408 film Substances 0.000 claims description 181
- 229910052732 germanium Inorganic materials 0.000 claims description 78
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 43
- 239000007789 gas Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009173709A JP5470519B2 (ja) | 2009-07-24 | 2009-07-24 | 薄膜トランジスタ、その製造方法及び液晶表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201115742A TW201115742A (en) | 2011-05-01 |
| TWI509810B true TWI509810B (zh) | 2015-11-21 |
Family
ID=43499084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099124143A TWI509810B (zh) | 2009-07-24 | 2010-07-22 | 薄膜電晶體及其製造方法與液晶顯示裝置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5470519B2 (ja) |
| KR (2) | KR101713360B1 (ja) |
| CN (1) | CN102576733B (ja) |
| TW (1) | TWI509810B (ja) |
| WO (1) | WO2011010611A1 (ja) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012117439A1 (ja) | 2011-02-28 | 2012-09-07 | パナソニック株式会社 | 薄膜半導体装置及びその製造方法 |
| WO2014061762A1 (en) * | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2016072024A1 (ja) * | 2014-11-07 | 2016-05-12 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示パネル |
| JP6471379B2 (ja) * | 2014-11-25 | 2019-02-20 | 株式会社ブイ・テクノロジー | 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置 |
| CN104460165B (zh) * | 2014-12-31 | 2017-06-16 | 深圳市华星光电技术有限公司 | 一种液晶显示器和液晶面板以及阵列基板 |
| WO2016157313A1 (ja) * | 2015-03-27 | 2016-10-06 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ及び表示パネル |
| CN107408578B (zh) * | 2015-03-30 | 2020-08-11 | 堺显示器制品株式会社 | 薄膜晶体管以及显示面板 |
| WO2016170571A1 (ja) * | 2015-04-20 | 2016-10-27 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示パネル |
| CN108028201B (zh) * | 2015-09-17 | 2021-06-04 | 堺显示器制品株式会社 | 薄膜晶体管和薄膜晶体管的制造方法 |
| CN108028283B (zh) * | 2015-09-18 | 2021-03-02 | 堺显示器制品株式会社 | 薄膜晶体管的制造方法和薄膜晶体管 |
| WO2017072921A1 (ja) * | 2015-10-29 | 2017-05-04 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ基板の製造方法 |
| JP6666426B2 (ja) | 2016-03-04 | 2020-03-13 | 堺ディスプレイプロダクト株式会社 | レーザーアニール装置、マスク、及びレーザーアニール方法 |
| CN105633101A (zh) * | 2016-04-01 | 2016-06-01 | 京东方科技集团股份有限公司 | Tft阵列基板及其制造方法、显示装置 |
| CN105870203B (zh) * | 2016-06-24 | 2019-05-10 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板、显示装置 |
| CN109997213A (zh) | 2016-09-28 | 2019-07-09 | 堺显示器制品株式会社 | 激光退火装置和激光退火方法 |
| WO2018109912A1 (ja) | 2016-12-15 | 2018-06-21 | 堺ディスプレイプロダクト株式会社 | レーザーアニール装置、レーザーアニール方法及びマスク |
| USD944655S1 (en) | 2019-11-29 | 2022-03-01 | Jirasak Rattanapaibooncharoen | Double cup carrier |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200730981A (en) * | 2005-12-16 | 2007-08-16 | Samsung Electronics Co Ltd | Thin film transistor array panel for liquid crystal display and manufacturing method thereof |
| TW200847443A (en) * | 2006-12-28 | 2008-12-01 | Lg Display Co Ltd | Thin film transistor substrate and fabricating method thereof |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0473988A1 (en) * | 1990-08-29 | 1992-03-11 | International Business Machines Corporation | Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region |
| JP2814319B2 (ja) * | 1991-08-29 | 1998-10-22 | 株式会社日立製作所 | 液晶表示装置及びその製造方法 |
| JPH0563196A (ja) | 1991-09-04 | 1993-03-12 | Hitachi Ltd | 薄膜半導体装置及びその製造方法並び液晶表示装置 |
| MY109592A (en) * | 1992-11-16 | 1997-03-31 | Tokyo Electron Ltd | Method and apparatus for manufacturing a liquid crystal display substrate, and apparatus and method for evaluating semiconductor crystals. |
| JPH07162006A (ja) * | 1993-12-09 | 1995-06-23 | Hitachi Ltd | 薄膜半導体装置及びその製造方法 |
| JP2005057056A (ja) * | 2003-08-04 | 2005-03-03 | Sharp Corp | 薄膜トランジスタおよびその製造方法 |
| JP2005311164A (ja) * | 2004-04-23 | 2005-11-04 | Nikon Corp | レーザアニール装置 |
| JP2008140984A (ja) * | 2006-12-01 | 2008-06-19 | Sharp Corp | 半導体素子、半導体素子の製造方法、及び表示装置 |
| JP5226259B2 (ja) * | 2007-08-21 | 2013-07-03 | 株式会社ジャパンディスプレイイースト | 液晶表示装置 |
| KR20090028318A (ko) * | 2007-09-14 | 2009-03-18 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조 방법 |
| JP2009076707A (ja) * | 2007-09-21 | 2009-04-09 | Hitachi Displays Ltd | 表示装置の製造方法 |
| JP5309387B2 (ja) * | 2007-09-28 | 2013-10-09 | 株式会社日立製作所 | 半導体層とこの半導体層を用いた半導体装置および表示装置 |
| TWI481029B (zh) * | 2007-12-03 | 2015-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
-
2009
- 2009-07-24 JP JP2009173709A patent/JP5470519B2/ja active Active
-
2010
- 2010-07-16 WO PCT/JP2010/062075 patent/WO2011010611A1/ja active Application Filing
- 2010-07-16 CN CN201080033821.5A patent/CN102576733B/zh not_active Expired - Fee Related
- 2010-07-16 KR KR1020127004740A patent/KR101713360B1/ko active IP Right Grant
- 2010-07-16 KR KR1020177003103A patent/KR101803691B1/ko active IP Right Grant
- 2010-07-22 TW TW099124143A patent/TWI509810B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200730981A (en) * | 2005-12-16 | 2007-08-16 | Samsung Electronics Co Ltd | Thin film transistor array panel for liquid crystal display and manufacturing method thereof |
| TW200847443A (en) * | 2006-12-28 | 2008-12-01 | Lg Display Co Ltd | Thin film transistor substrate and fabricating method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101803691B1 (ko) | 2017-12-28 |
| CN102576733A (zh) | 2012-07-11 |
| WO2011010611A1 (ja) | 2011-01-27 |
| KR20120033353A (ko) | 2012-04-06 |
| TW201115742A (en) | 2011-05-01 |
| CN102576733B (zh) | 2015-04-22 |
| JP5470519B2 (ja) | 2014-04-16 |
| KR101713360B1 (ko) | 2017-03-22 |
| JP2011029411A (ja) | 2011-02-10 |
| KR20170017008A (ko) | 2017-02-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |