CN102576733B - 薄膜晶体管、其制造方法及液晶显示装置 - Google Patents
薄膜晶体管、其制造方法及液晶显示装置 Download PDFInfo
- Publication number
- CN102576733B CN102576733B CN201080033821.5A CN201080033821A CN102576733B CN 102576733 B CN102576733 B CN 102576733B CN 201080033821 A CN201080033821 A CN 201080033821A CN 102576733 B CN102576733 B CN 102576733B
- Authority
- CN
- China
- Prior art keywords
- film
- thin
- amorphous silicon
- transistor
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 155
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 75
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 48
- 229920005591 polysilicon Polymers 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- 230000004048 modification Effects 0.000 claims description 5
- 238000012986 modification Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000014759 maintenance of location Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000004043 responsiveness Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009173709A JP5470519B2 (ja) | 2009-07-24 | 2009-07-24 | 薄膜トランジスタ、その製造方法及び液晶表示装置 |
| JP2009-173709 | 2009-07-24 | ||
| PCT/JP2010/062075 WO2011010611A1 (ja) | 2009-07-24 | 2010-07-16 | 薄膜トランジスタ、その製造方法及び液晶表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102576733A CN102576733A (zh) | 2012-07-11 |
| CN102576733B true CN102576733B (zh) | 2015-04-22 |
Family
ID=43499084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080033821.5A Expired - Fee Related CN102576733B (zh) | 2009-07-24 | 2010-07-16 | 薄膜晶体管、其制造方法及液晶显示装置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5470519B2 (ja) |
| KR (2) | KR101713360B1 (ja) |
| CN (1) | CN102576733B (ja) |
| TW (1) | TWI509810B (ja) |
| WO (1) | WO2011010611A1 (ja) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012117439A1 (ja) | 2011-02-28 | 2012-09-07 | パナソニック株式会社 | 薄膜半導体装置及びその製造方法 |
| WO2014061762A1 (en) * | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2016072024A1 (ja) * | 2014-11-07 | 2016-05-12 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示パネル |
| JP6471379B2 (ja) * | 2014-11-25 | 2019-02-20 | 株式会社ブイ・テクノロジー | 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置 |
| CN104460165B (zh) * | 2014-12-31 | 2017-06-16 | 深圳市华星光电技术有限公司 | 一种液晶显示器和液晶面板以及阵列基板 |
| WO2016157313A1 (ja) * | 2015-03-27 | 2016-10-06 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ及び表示パネル |
| CN107408578B (zh) * | 2015-03-30 | 2020-08-11 | 堺显示器制品株式会社 | 薄膜晶体管以及显示面板 |
| WO2016170571A1 (ja) * | 2015-04-20 | 2016-10-27 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示パネル |
| CN108028201B (zh) * | 2015-09-17 | 2021-06-04 | 堺显示器制品株式会社 | 薄膜晶体管和薄膜晶体管的制造方法 |
| CN108028283B (zh) * | 2015-09-18 | 2021-03-02 | 堺显示器制品株式会社 | 薄膜晶体管的制造方法和薄膜晶体管 |
| WO2017072921A1 (ja) * | 2015-10-29 | 2017-05-04 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ基板の製造方法 |
| JP6666426B2 (ja) | 2016-03-04 | 2020-03-13 | 堺ディスプレイプロダクト株式会社 | レーザーアニール装置、マスク、及びレーザーアニール方法 |
| CN105633101A (zh) * | 2016-04-01 | 2016-06-01 | 京东方科技集团股份有限公司 | Tft阵列基板及其制造方法、显示装置 |
| CN105870203B (zh) * | 2016-06-24 | 2019-05-10 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板、显示装置 |
| CN109997213A (zh) | 2016-09-28 | 2019-07-09 | 堺显示器制品株式会社 | 激光退火装置和激光退火方法 |
| WO2018109912A1 (ja) | 2016-12-15 | 2018-06-21 | 堺ディスプレイプロダクト株式会社 | レーザーアニール装置、レーザーアニール方法及びマスク |
| USD944655S1 (en) | 2019-11-29 | 2022-03-01 | Jirasak Rattanapaibooncharoen | Double cup carrier |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0473988A1 (en) * | 1990-08-29 | 1992-03-11 | International Business Machines Corporation | Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region |
| CN1088002A (zh) * | 1992-11-16 | 1994-06-15 | 东京电子株式会社 | 制造液晶显示器基板及评价半导体晶体的方法与装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2814319B2 (ja) * | 1991-08-29 | 1998-10-22 | 株式会社日立製作所 | 液晶表示装置及びその製造方法 |
| JPH0563196A (ja) | 1991-09-04 | 1993-03-12 | Hitachi Ltd | 薄膜半導体装置及びその製造方法並び液晶表示装置 |
| JPH07162006A (ja) * | 1993-12-09 | 1995-06-23 | Hitachi Ltd | 薄膜半導体装置及びその製造方法 |
| JP2005057056A (ja) * | 2003-08-04 | 2005-03-03 | Sharp Corp | 薄膜トランジスタおよびその製造方法 |
| JP2005311164A (ja) * | 2004-04-23 | 2005-11-04 | Nikon Corp | レーザアニール装置 |
| KR20070063969A (ko) * | 2005-12-16 | 2007-06-20 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP2008140984A (ja) * | 2006-12-01 | 2008-06-19 | Sharp Corp | 半導体素子、半導体素子の製造方法、及び表示装置 |
| KR20080061924A (ko) * | 2006-12-28 | 2008-07-03 | 엘지디스플레이 주식회사 | 박막트랜지스터 기판과 이의 제조방법 |
| JP5226259B2 (ja) * | 2007-08-21 | 2013-07-03 | 株式会社ジャパンディスプレイイースト | 液晶表示装置 |
| KR20090028318A (ko) * | 2007-09-14 | 2009-03-18 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조 방법 |
| JP2009076707A (ja) * | 2007-09-21 | 2009-04-09 | Hitachi Displays Ltd | 表示装置の製造方法 |
| JP5309387B2 (ja) * | 2007-09-28 | 2013-10-09 | 株式会社日立製作所 | 半導体層とこの半導体層を用いた半導体装置および表示装置 |
| TWI481029B (zh) * | 2007-12-03 | 2015-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
-
2009
- 2009-07-24 JP JP2009173709A patent/JP5470519B2/ja active Active
-
2010
- 2010-07-16 WO PCT/JP2010/062075 patent/WO2011010611A1/ja active Application Filing
- 2010-07-16 CN CN201080033821.5A patent/CN102576733B/zh not_active Expired - Fee Related
- 2010-07-16 KR KR1020127004740A patent/KR101713360B1/ko active IP Right Grant
- 2010-07-16 KR KR1020177003103A patent/KR101803691B1/ko active IP Right Grant
- 2010-07-22 TW TW099124143A patent/TWI509810B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0473988A1 (en) * | 1990-08-29 | 1992-03-11 | International Business Machines Corporation | Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region |
| CN1088002A (zh) * | 1992-11-16 | 1994-06-15 | 东京电子株式会社 | 制造液晶显示器基板及评价半导体晶体的方法与装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101803691B1 (ko) | 2017-12-28 |
| CN102576733A (zh) | 2012-07-11 |
| WO2011010611A1 (ja) | 2011-01-27 |
| KR20120033353A (ko) | 2012-04-06 |
| TW201115742A (en) | 2011-05-01 |
| TWI509810B (zh) | 2015-11-21 |
| JP5470519B2 (ja) | 2014-04-16 |
| KR101713360B1 (ko) | 2017-03-22 |
| JP2011029411A (ja) | 2011-02-10 |
| KR20170017008A (ko) | 2017-02-14 |
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