CN102576733B - Thin-film transistor, manufacturing method therefor, and liquid-crystal display device - Google Patents

Thin-film transistor, manufacturing method therefor, and liquid-crystal display device Download PDF

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CN102576733B
CN102576733B CN201080033821.5A CN201080033821A CN102576733B CN 102576733 B CN102576733 B CN 102576733B CN 201080033821 A CN201080033821 A CN 201080033821A CN 102576733 B CN102576733 B CN 102576733B
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film
thin
amorphous silicon
transistor
polysilicon
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CN102576733A (en
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滨野邦幸
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V Technology Co Ltd
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V Technology Co Ltd
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
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    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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    • H01L29/772—Field effect transistors
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    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes

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  • Thin Film Transistor (AREA)
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Abstract

Provided is a thin-film transistor comprising a low-temperature polysilicon transistor having a low off-current, excellent potential-holding characteristics, low power usage, and a high operating speed. Also provided are a liquid-crystal display device using said thin-film transistor and a method for manufacturing the thin-film transistor. The provided thin-film transistor uses an inversely staggered structure with a gate electrode, a gate insulation film, a channel region, and source/drain electrodes formed on top of a glass substrate. The channel region comprises a polysilicon film and an a-Si:H film that covers the top and sides of the polysilicon

Description

Thin-film transistor, its manufacture method and liquid crystal indicator
Technical field
The present invention relates to the thin-film transistor of reverse stagger structure, be particularly suitable for the thin-film transistor of the pixel transistor of the display part of liquid crystal indicator, its manufacture method and liquid crystal indicator.
Background technology
As the thin-film transistor of reverse stagger structure, there is amorphous silicon transistor, it utilizes the metal levels such as Cr or Al in insulative substrate, form gate electrode, then such as on the substrate comprising this gate electrode, form SiN film as gate insulating film, on whole, then form amorphous silicon hydride (hereinafter referred to as " a-Si:H ") film.This amorphous silicon transistor and then such as form n on a-Si:H film +si film, the regulation region on gate electrode is to a-Si:H film and n +si film island composition, after recycling metal level forms source/drain electrode, using this source/drain electrode as mask, etching n +si film, the n of the top of removing channel region presumptive area +si film, thus form channel region at the intersection of a-Si:H film and SiN gate insulating film, namely accused after then forming passivating film comprehensively.The amorphous silicon film transistor of this reverse stagger structure is due to cut-off current I oFFless, so such as can use as the pixel transistor of liquid crystal indicator.
, amorphous silicon transistor because use a-Si:H film in channel region, so there is the little problem of charge mobility in channel region.Coming in, someone proposes the scheme forming the liquid crystal indicator of drive circuit at the periphery of the substrate forming pixel portion, but in this liquid crystal indicator, although amorphous silicon transistor can use as the pixel transistor in pixel portion, as the transistor formed rewriting required peripheral driving circuit more at high speed, the charge mobility of channel region is too little, is difficult to use.
Therefore, someone proposes following proposal again: anneal to a-Si irradiating laser, thus make a-Si crystallization turn to polycrystal silicon (hereinafter referred to as " polysilicon "), the low-temperature polycrystalline silicon transistor (patent documentation 1) of the reverse stagger structure of polysilicon film is formed in channel region.
Low-temperature polycrystalline silicon transistor described in patent documentation 1, adopts following method to be formed.In other words, as shown in Figure 7, glass substrate 101 is formed the gate electrode 102 of Cr or Al etc., then on whole of substrate 101 of comprising gate electrode 102, forms the gate insulating film 103 be made up of SiN, and then form the a-Si:H film that thickness is 10 ~ 40nm thereon.Then, making laser irradiating part part to this a-Si:H film wire illuminating laser beam towards the scanning direction perpendicular to described line, thus anneal to whole the upper excimer laser that irradiates of a-Si:H film, is polysilicon film 104 by whole a-Si:H membrane modifying.Then, polysilicon film 104 after modification forms a-Si:H film 105 again, and then form n on a-Si:H film 105 +si film 106, these n of island etching and processing above gate electrode 102 +si film 106, a-Si:H film 105 and polysilicon film 104.Then, this island Si trilamellar membrane forms source/drain electrode 107, using this source/drain electrode 107 as mask, removing n +si film 106, forms passivating film 108 thereafter comprehensively.
The low-temperature polycrystalline silicon transistor of such formation, with polysilicon film 104 and a-Si:H film 105 2 tunic constituting channel district, polysilicon film 104 contacts with SiN gate insulating film 103, so the charge mobility of channel region increases, On current becomes large, responsiveness is accelerated, thus is enough to use as the transistor of the peripheral driving circuit of liquid crystal indicator.
Patent documentation 1: Japanese Unexamined Patent Publication 5-63196 publication
Summary of the invention
, the low-temperature polycrystalline silicon transistor of above-mentioned prior art, although On current is large, cut-off current is also large, while making current potential retention performance reduce, also makes the electric current of leakage increase, so there is the large problem of consumed power.
The present invention develops for above-mentioned situation, its object is to that providing package is excellent containing little, the current potential retention performance of cut-off current, consumed power low while the also fast thin-film transistor of low-temperature polycrystalline silicon transistor of responsiveness, the manufacture method of this thin-film transistor and use its liquid crystal indicator.
The thin-film transistor that the present invention relates to, is the thin-film transistor of reverse stagger structure, it is characterized in that, have: insulative substrate; The gate electrode that this insulative substrate is formed; The gate insulating film that this gate electrode is formed; The polysilicon film that the position island corresponding with described gate electrode on this gate insulating film is formed; The upper surface covering this polysilicon film and the amorphous silicon film formed laterally; And the source/drain electrode to be formed with being electrically connected with the both ends of this amorphous silicon film.
Described gate insulating film is such as SiN film.
The manufacture method of the thin-film transistor that the present invention relates to, is the manufacture method of the thin-film transistor of reverse stagger structure, it is characterized in that, have: the operation forming gate electrode in insulative substrate; The described substrate comprising described gate electrode is formed the operation of gate insulating film; Described gate insulating film is formed the operation of the first amorphous silicon film; For described first amorphous silicon film, to the island areas irradiating laser corresponding with described gate electrode, this region is modified as the operation of polysilicon film; This modification polysilicon region and the first amorphous silicon film region are formed the operation of the second amorphous silicon film; Stay and cover the described upper surface of modification polysilicon film and the amorphous silicon film of side, the operation of the amorphous silicon film of removing other parts; And form the operation of source/drain electrode with being electrically connected with the both ends of the amorphous silicon film stayed.In addition, in described amorphous silicon film, except not hydrogeneous film (a-Si film), hydrogeneous hydrogenated amorphous silicon film (a-Si:H film) etc. is also comprised.
In the irradiation process of described laser, configuration multiple lenticular microlens array is utilized laser focusing to be obtained multiple laser beam, by the described island areas of multiple thin-film transistors of the rectangular configuration of described each laser beam irradiation, the polysilicon region of multiple thin-film transistor can be formed.
In addition, the liquid crystal indicator that the present invention relates to, is characterized in that: used as the pixel transistor of display part and the driving transistors of peripheral driving circuit by described thin-film transistor.
According to thin-film transistor of the present invention, because form channel region at the intersection of the gate insulating films such as SiN film and polysilicon film, so the migration velocity of electric charge is fast, On current large, writing speed is accelerated, thus made responsiveness accelerate.And amorphous silicon film covers the side of polysilicon film, because the suitable speed of moving of the electric charge of this amorphous silicon film is slow, so compared with when there is not amorphous silicon film, leakage current can be made to reduce, while the current potential retention performance obtaining excellence, also reduce consumed power.
In addition, according to the manufacture method of thin-film transistor of the present invention, because for the first amorphous silicon film, to the island areas corresponding with gate electrode irradiating laser locally, this region is modified as polysilicon film, and then form the second amorphous silicon film on this polysilicon film and the first amorphous silicon film after, form the channel region be made up of with the covering upper surface of this polysilicon film and the amorphous silicon film of side described polysilicon film, so can easily manufacture thin-film transistor of the present invention.
And then according to liquid crystal indicator of the present invention, the responsiveness of drive circuit can be made to accelerate, leakage current reduces, and also reduces consumed power.
Accompanying drawing explanation
Fig. 1 represents the thin-film transistor that embodiments of the present invention relate to, and (a) is plane graph, and (b) is the profile of the B-B line of (a), and (c) is the profile of the C-C line of (a).
Fig. 2 is the plane graph of 1 pixel of the display part of the liquid crystal indicator represented in embodiments of the present invention.
Fig. 3 represents the figure utilizing the laser irradiation device of microlens array used in the manufacture method that relates in embodiments of the present invention, and (a) is overall diagram, and (b) represents microlens array.
Fig. 4 (a) ~ (c) is the profile of the manufacture method representing the thin-film transistor that embodiments of the present invention relate to according to process sequence.
Fig. 5 (a) ~ (c) is the profile of the manufacture method representing the thin-film transistor that embodiments of the present invention relate to according to process sequence, represents the next procedure of Fig. 4.
Fig. 6 (a) ~ (c) is the profile of the manufacture method representing the thin-film transistor that embodiments of the present invention relate to according to process sequence, represents the next procedure of Fig. 5.
Fig. 7 is the profile of the thin-film transistor representing existing reverse stagger structure.
Embodiment
Below, with reference to accompanying drawing, specifically embodiments of the present invention are told about.Fig. 1 be represent thin-film transistor that embodiments of the present invention relate to, plane graph that Fig. 2 is 1 pixel of the display part representing liquid crystal indicator.In liquid crystal indicator, the peripheral circuit of configuration display part and the driving at the periphery of this display part, in display part, form multiple scan line SL and multiple holding wire DL as shown in Figure 2 orthogonally, form 1 pixel at the unit area surrounded by this scan line SL and holding wire DL.In each pixel, form the transparency electrode TE and switching transistor T that are made up of ITO (Indium TinOxide), the gate electrode of this transistor T is connected with scan line SL, and the drain electrode of transistor T is connected with holding wire DL, and source electrode is connected with the transparency electrode TE be made up of ITO.
Fig. 1 (a) is the plane graph of transistor 1 (T), and Fig. 1 (b) is the profile of the B-B line of Fig. 1 (a), and Fig. 1 (c) is the profile of the C-C line of Fig. 1 (a).As shown in Fig. 1 (a), the grid G of transistor T is connected with scan line SL, and drain D is connected with holding wire DL, and source S is connected with transparency electrode TE.Above grid G, form the island IL in constituting channel region; Above the IL of island, the interval separating suitable length forms drain D and source S in opposite directions.
As shown in Fig. 1 (b) and Fig. 1 (c), the thin-film transistor 1 (T) of present embodiment, the glass substrate 10 of transparent insulating is formed the gate electrode 11 (G) be connected with scan line SL, comprises on this gate electrode 11, form the gate insulating film 12 be made up of SiN on the substrate 10.Gate electrode 11 is metal levels of Cr or Al etc., and sputtering method can be adopted to be formed.On gate insulating film 12, the position on gate electrode 11, forms polysilicon film 13 island (IL), covers the upper surface of this polysilicon film 13 and forms hydrogenated amorphous silicon film (hereinafter referred to as " a-Si:H film ") 14 laterally.The both ends of this a-Si:H film 14 form the drain electrode 15a (D) be connected with holding wire DL and the source electrode 15b (S) be connected with the transparency electrode TE of pixel overlappingly.Then, form the diaphragm 16 be made up of SiN comprehensively.
In the thin-film transistor of the reverse stagger structure so formed, a-Si:H film 14 is electrically connected with drain electrode 15a and source electrode 15b, forms channel region by this a-Si:H film 14 and polysilicon film 13.During due to transistor action, generate electric charge at the intersection of polysilicon film 13 and SiN gate insulating film 12, this electric charge moves at this intersection, so the charge mobility of the thin-film transistor of present embodiment is high, On current is large.Like this, the thin-film transistor of present embodiment is large due to On current, so can shorten the write time, carries out high speed motion.
And, because around the island be made up of this polysilicon film 13 namely the side of polysilicon film 13 form amorphous a-Si:H film 14, so the surrounding on island is few as the leakage current in path, cut-off current is little.Like this, because cut-off current is little, so the retention performance of current potential is excellent, can prevent the current potential of the pixel transistor of the display part of liquid crystal indicator from declining along with the time.Therefore, according to present embodiment, the transistor that On current is large, cut-off current is little can be obtained.Like this, this transistor can at full speed action, and makes that current potential retention performance is excellent, consumed power is little.
Then, the manufacture method of the thin-film transistor formed as described above is told about.Fig. 4 (a) ~ (c), Fig. 5 (a) ~ (c) and Fig. 6 (a) ~ (c) are the profiles of the manufacture method representing present embodiment according to process sequence.As shown in Fig. 4 (a), adopting sputtering method on glass substrate 1, form the such as thickness be made up of metal films such as Mo, Cr or Al is 2000 ~ 3000 gate electrode 2.This gate electrode can with scan line SL simultaneously on glass substrate 1 composition formed.
Then, as shown in Fig. 4 (b), such as, by silane and H 2gas, as unstrpped gas, adopts 250 ~ 300.Low temperature plasma CVD, holomorphism precedent such as thickness is 2500 ~ 5000 the gate insulating film 3 be made up of SiN film.Then, as shown in Fig. 4 (c), it is 200 ~ 1000 that such as using plasma CVD forms such as thickness on gate insulating film 3 an a-Si:H film 4a.This a-Si:H film 4a does not make exposure of substrates move to continuous film forming after in other container in atmosphere after formation SiN film.By silane, ammonia and H 2gas forms a-Si:H film 4a as unstrpped gas, although mixing H 2gas is conducive to improving film quality, but its interpolation is arbitrary.Thereafter, take out substrate, by the laser annealing using the microlens array shown in Fig. 3 (a) to carry out a-Si:H film 4a, thus only synform becomes the presumptive area irradiating laser of channel region to anneal, make the presumptive area multiple crystallization of this formation channel region, form polysilicon film 4.
As shown in Figure 3, use the laser anneal device of this microlens array, utilize set of lenses 32 that the laser that light source 31 penetrates is become collimated light beam, via microlens array 35, irradiate irradiated body 36.LASER Light Source 31 is such as by the excimer laser that the alternating cycles emission wavelength of 50Hz is such as the laser of 308nm or 353nm.Microlens array 35 is the parts configuring many lenticules 35 on transparency carrier 34, and it makes laser focusing to the thin-film transistor forming region being set in thin film transistor base plate as irradiated body 36.Transparency carrier 34 is configured abreast by with irradiated body 36, and lenticule 35 is configured by the spacing of the integral multiple (such as 2) with more than 2 of the arrangement pitches of transistor formation region.The irradiated body 36 of present embodiment is thin-film transistor 1, and the presumptive area to the formation channel region shown in Fig. 4 (c) is irradiated by the laser after lenticule 35 optically focused.In addition, in the way of advancing of laser beam being shaped as collimated light beam by set of lenses 32, configure light-blocking member 33, utilize this light-blocking member 33 can become rectangle by by the beam shape such as shaping of irradiating the laser beam of irradiated body 36 after lenticule 34 optically focused.Like this, as shown in Fig. 1 (a), even if the presumptive area forming channel region is rectangle, lenticule 34 also can be utilized to irradiate that region selectively.
Then, as shown in Fig. 5 (a), whole on polysilicon film 4 and an a-Si:H film 4a layer forms such as thickness is 2000 ~ 3000 the 2nd a-Si:H film 5a.The membrance casting condition of the 2nd a-Si:H film 5a is identical with the membrance casting condition of an a-Si:H film 4a.Then, do not take out from container continuity ground, substrate ground as Fig. 5 (b) be shown in that to form such as thickness on a-Si:H film 5a be 500 the n of left and right +si film 6a.This n +si film 6a can contain the gas of the gas of P as unstrpped gas, using plasma CVD film forming using mixing in silane hydrogen phosphide etc.At this moment, can also by H 2gas is mixed into unstrpped gas.Again then, take out substrate, as shown in Fig. 5 (c), make a-Si:H film 4a, a-Si:H film 5a and n +si film 6a, only leaves the a-Si:H film 4a of the part of the top of polysilicon film 4 and the side of polysilicon film 4, removes other parts, and composition forms the channel region of island.
Then, as shown in Fig. 6 (a), with n +the mode of the ends contact of Si film 6a, forming such as thickness is 2000 ~ 5000 drain electrode 7a and source electrode 7b.Then, as shown in Fig. 6 (b), using these drain electrodes 7a and source electrode 7b as mask, etching removing n +si film 6a, thus only between drain electrode 7a and source electrode 7b and a-Si:H film 5, leave n +film 6.
Thereafter, as shown in Fig. 6 (c), form the diaphragm 8 be made up of SiN film comprehensively.In Fig. 6 (c), represent the symbol of the part corresponding with the structure of Fig. 1 (b) with bracket.Structure shown in Fig. 6 (c), arranges n between source/drain electrode and a-Si:H film +si film 6, this point is different from the structure of Fig. 1 (b).This n +si film 6 in order to improve adhesion between source/drain electrode and a-Si:H film, reduce contact resistance and arrange., this n +the formation of Si film is arbitrary, also can not form n as shown in Figure 1 +si film, or adopt the contact resistance between other method reduction source/drain electrode and a-Si:H film.
Like this, the thin-film transistor shown in Fig. 1 can be produced.In above-mentioned manufacture method, because microlens array can be used only to the channel region illuminating laser beam of thin-film transistor, so the irradiation of this laser beam can be utilized to anneal to a-Si:H film, thus only make the presumptive area crystallization of formation channel region, form the polysilicon film 4 of island.Therefore, it is possible to easily produce the thin-film transistor that a-Si:H film 14 (4a) covers the side of polysilicon film 13 (4) and the structure of upper surface.
In addition, from illustrating above: used by the thin-film transistor of the reverse stagger structure using the present embodiment pixel transistor as the display part of liquid crystal indicator, the speed of the pixel transistor of display part can be improved, reduce leakage current, thus current potential is tended towards stability.In addition, the transistor of the thin-film transistor of the reverse stagger structure of present embodiment as the peripheral driving circuit of liquid crystal indicator can also be used, because the thin-film transistor of present embodiment uses polysilicon film in channel region, so can high speed motion.Generally speaking, the thin-film transistor of present embodiment, because On current is large, cut-off current is little, so be suitable for the transistor as liquid crystal indicator to use.
Industry utilizes possibility
The present invention is of value to the film crystal pipe manufacturer liquid crystal indicator using reverse stagger structure.
Symbol description
1,10 glass substrates; 2,11 gate electrodes; 3,12 gate insulating films; 4,13 polysilicon films; 4a, 5,5a, 14 a-Si:H films; 6,6a n +film; 7a, 15a drain electrode; 7b, 15b source electrode; 8,16 diaphragms.

Claims (1)

1. a manufacture method for the thin-film transistor of reverse stagger structure, is characterized in that, has:
Insulative substrate is formed the operation of gate electrode;
The described substrate comprising described gate electrode is formed the operation of gate insulating film;
Described gate insulating film is formed the operation of the first amorphous silicon film;
For described first amorphous silicon film, to the island areas irradiating laser corresponding with described gate electrode, this region is modified as the operation of polysilicon film;
This modification polysilicon region and the first amorphous silicon film region are formed the operation of the second amorphous silicon film;
Stay and cover the described upper surface of modification polysilicon film and the amorphous silicon film of side, the operation of the amorphous silicon film of removing other parts; And
The operation of source electrode and drain electrode is formed with being electrically connected with the both ends of the amorphous silicon film stayed,
Manufacture the thin-film transistor of described reverse stagger structure, moved by described amorphous silicon film to make electric charge between described source electrode and described polysilicon film and between described drain electrode and described polysilicon film, meanwhile, channel region is formed at the intersection of described gate insulating film and described polysilicon film.
2. the manufacture method of thin-film transistor as claimed in claim 1, it is characterized in that: in the irradiation process of described laser, configuration multiple lenticular microlens array is utilized laser focusing to be obtained multiple laser beam, by the described island areas of multiple thin-film transistors of the rectangular configuration of described each laser beam irradiation, form the polysilicon region of multiple thin-film transistor.
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