KR101713360B1 - 박막 트랜지스터, 그 제조 방법 및 액정 표시 장치 - Google Patents

박막 트랜지스터, 그 제조 방법 및 액정 표시 장치 Download PDF

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KR101713360B1
KR101713360B1 KR1020127004740A KR20127004740A KR101713360B1 KR 101713360 B1 KR101713360 B1 KR 101713360B1 KR 1020127004740 A KR1020127004740 A KR 1020127004740A KR 20127004740 A KR20127004740 A KR 20127004740A KR 101713360 B1 KR101713360 B1 KR 101713360B1
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film
amorphous silicon
transistor
thin film
polysilicon
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KR1020127004740A
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Korean (ko)
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KR20120033353A (ko
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구니유끼 하마노
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브이 테크놀로지 씨오. 엘티디
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
KR1020127004740A 2009-07-24 2010-07-16 박막 트랜지스터, 그 제조 방법 및 액정 표시 장치 KR101713360B1 (ko)

Applications Claiming Priority (3)

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JPJP-P-2009-173709 2009-07-24
JP2009173709A JP5470519B2 (ja) 2009-07-24 2009-07-24 薄膜トランジスタ、その製造方法及び液晶表示装置
PCT/JP2010/062075 WO2011010611A1 (ja) 2009-07-24 2010-07-16 薄膜トランジスタ、その製造方法及び液晶表示装置

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KR1020177003103A Division KR101803691B1 (ko) 2009-07-24 2010-07-16 박막 트랜지스터, 그 제조 방법 및 액정 표시 장치

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KR20120033353A KR20120033353A (ko) 2012-04-06
KR101713360B1 true KR101713360B1 (ko) 2017-03-22

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KR1020127004740A KR101713360B1 (ko) 2009-07-24 2010-07-16 박막 트랜지스터, 그 제조 방법 및 액정 표시 장치
KR1020177003103A KR101803691B1 (ko) 2009-07-24 2010-07-16 박막 트랜지스터, 그 제조 방법 및 액정 표시 장치

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JP (1) JP5470519B2 (ja)
KR (2) KR101713360B1 (ja)
CN (1) CN102576733B (ja)
TW (1) TWI509810B (ja)
WO (1) WO2011010611A1 (ja)

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WO2012117439A1 (ja) 2011-02-28 2012-09-07 パナソニック株式会社 薄膜半導体装置及びその製造方法
WO2014061762A1 (en) * 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2016072024A1 (ja) * 2014-11-07 2016-05-12 堺ディスプレイプロダクト株式会社 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示パネル
JP6471379B2 (ja) * 2014-11-25 2019-02-20 株式会社ブイ・テクノロジー 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置
CN104460165B (zh) * 2014-12-31 2017-06-16 深圳市华星光电技术有限公司 一种液晶显示器和液晶面板以及阵列基板
WO2016157313A1 (ja) * 2015-03-27 2016-10-06 堺ディスプレイプロダクト株式会社 薄膜トランジスタ及び表示パネル
CN107408578B (zh) * 2015-03-30 2020-08-11 堺显示器制品株式会社 薄膜晶体管以及显示面板
WO2016170571A1 (ja) * 2015-04-20 2016-10-27 堺ディスプレイプロダクト株式会社 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示パネル
CN108028201B (zh) * 2015-09-17 2021-06-04 堺显示器制品株式会社 薄膜晶体管和薄膜晶体管的制造方法
CN108028283B (zh) * 2015-09-18 2021-03-02 堺显示器制品株式会社 薄膜晶体管的制造方法和薄膜晶体管
WO2017072921A1 (ja) * 2015-10-29 2017-05-04 堺ディスプレイプロダクト株式会社 薄膜トランジスタ基板の製造方法
JP6666426B2 (ja) 2016-03-04 2020-03-13 堺ディスプレイプロダクト株式会社 レーザーアニール装置、マスク、及びレーザーアニール方法
CN105633101A (zh) * 2016-04-01 2016-06-01 京东方科技集团股份有限公司 Tft阵列基板及其制造方法、显示装置
CN105870203B (zh) * 2016-06-24 2019-05-10 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示装置
CN109997213A (zh) 2016-09-28 2019-07-09 堺显示器制品株式会社 激光退火装置和激光退火方法
WO2018109912A1 (ja) 2016-12-15 2018-06-21 堺ディスプレイプロダクト株式会社 レーザーアニール装置、レーザーアニール方法及びマスク
USD944655S1 (en) 2019-11-29 2022-03-01 Jirasak Rattanapaibooncharoen Double cup carrier

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JP2009049244A (ja) * 2007-08-21 2009-03-05 Hitachi Displays Ltd 液晶表示装置

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KR20080061924A (ko) * 2006-12-28 2008-07-03 엘지디스플레이 주식회사 박막트랜지스터 기판과 이의 제조방법
KR20090028318A (ko) * 2007-09-14 2009-03-18 엘지디스플레이 주식회사 어레이 기판 및 이의 제조 방법
JP2009076707A (ja) * 2007-09-21 2009-04-09 Hitachi Displays Ltd 表示装置の製造方法
JP5309387B2 (ja) * 2007-09-28 2013-10-09 株式会社日立製作所 半導体層とこの半導体層を用いた半導体装置および表示装置
TWI481029B (zh) * 2007-12-03 2015-04-11 半導體能源研究所股份有限公司 半導體裝置

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2008140984A (ja) 2006-12-01 2008-06-19 Sharp Corp 半導体素子、半導体素子の製造方法、及び表示装置
JP2009049244A (ja) * 2007-08-21 2009-03-05 Hitachi Displays Ltd 液晶表示装置

Also Published As

Publication number Publication date
KR101803691B1 (ko) 2017-12-28
CN102576733A (zh) 2012-07-11
WO2011010611A1 (ja) 2011-01-27
KR20120033353A (ko) 2012-04-06
TW201115742A (en) 2011-05-01
TWI509810B (zh) 2015-11-21
CN102576733B (zh) 2015-04-22
JP5470519B2 (ja) 2014-04-16
JP2011029411A (ja) 2011-02-10
KR20170017008A (ko) 2017-02-14

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