TWI488815B - 經改質顆粒及包含其之分散液 - Google Patents
經改質顆粒及包含其之分散液 Download PDFInfo
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- TWI488815B TWI488815B TW098129750A TW98129750A TWI488815B TW I488815 B TWI488815 B TW I488815B TW 098129750 A TW098129750 A TW 098129750A TW 98129750 A TW98129750 A TW 98129750A TW I488815 B TWI488815 B TW I488815B
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- substrate
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- 239000006185 dispersion Substances 0.000 title claims description 36
- 239000003607 modifier Substances 0.000 claims description 43
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- 238000000151 deposition Methods 0.000 claims description 13
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- 239000002131 composite material Substances 0.000 claims 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 91
- 239000011787 zinc oxide Substances 0.000 description 46
- 229910052751 metal Inorganic materials 0.000 description 41
- 239000002184 metal Substances 0.000 description 41
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 30
- 229910044991 metal oxide Inorganic materials 0.000 description 30
- 150000004706 metal oxides Chemical class 0.000 description 30
- 239000000203 mixture Substances 0.000 description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 14
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- 239000004065 semiconductor Substances 0.000 description 13
- 238000002411 thermogravimetry Methods 0.000 description 12
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- 239000011701 zinc Substances 0.000 description 10
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- 239000000725 suspension Substances 0.000 description 9
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- 239000000463 material Substances 0.000 description 7
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- YZGQDNOIGFBYKF-UHFFFAOYSA-N Ethoxyacetic acid Chemical compound CCOCC(O)=O YZGQDNOIGFBYKF-UHFFFAOYSA-N 0.000 description 4
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- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
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- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
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- 238000009826 distribution Methods 0.000 description 3
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- YHBWXWLDOKIVCJ-UHFFFAOYSA-N 2-[2-(2-methoxyethoxy)ethoxy]acetic acid Chemical compound COCCOCCOCC(O)=O YHBWXWLDOKIVCJ-UHFFFAOYSA-N 0.000 description 2
- OXTNCQMOKLOUAM-UHFFFAOYSA-N 3-Oxoglutaric acid Chemical compound OC(=O)CC(=O)CC(O)=O OXTNCQMOKLOUAM-UHFFFAOYSA-N 0.000 description 2
- HGINADPHJQTSKN-UHFFFAOYSA-M 3-ethoxy-3-oxopropanoate Chemical compound CCOC(=O)CC([O-])=O HGINADPHJQTSKN-UHFFFAOYSA-M 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- HSOVXDMXQYTMAF-UHFFFAOYSA-N CCC(CCCCCCCCCC(C)(C)C)(C(=O)O)C(=O)O Chemical compound CCC(CCCCCCCCCC(C)(C)C)(C(=O)O)C(=O)O HSOVXDMXQYTMAF-UHFFFAOYSA-N 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910020923 Sn-O Inorganic materials 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
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- 150000002367 halogens Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002609 medium Substances 0.000 description 2
- 229910001512 metal fluoride Inorganic materials 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
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- 150000004763 sulfides Chemical class 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
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- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- 238000004009 13C{1H}-NMR spectroscopy Methods 0.000 description 1
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 101150065749 Churc1 gene Proteins 0.000 description 1
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 238000005684 Liebig rearrangement reaction Methods 0.000 description 1
- 229910006715 Li—O Inorganic materials 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 102100038239 Protein Churchill Human genes 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229910007611 Zn—In—O Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
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- 239000003570 air Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
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- 229920002988 biodegradable polymer Polymers 0.000 description 1
- 239000004621 biodegradable polymer Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
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- 229920001477 hydrophilic polymer Polymers 0.000 description 1
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- 239000011147 inorganic material Substances 0.000 description 1
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- 230000037431 insertion Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 229910001509 metal bromide Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001511 metal iodide Inorganic materials 0.000 description 1
- 238000001471 micro-filtration Methods 0.000 description 1
- 238000001728 nano-filtration Methods 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- UNBPFPUTIKOOOI-UHFFFAOYSA-N oxane-2,4,6-trione Chemical compound O=C1CC(=O)OC(=O)C1 UNBPFPUTIKOOOI-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002721 polycyanoacrylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000004771 selenides Chemical class 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/04—Compounds of zinc
- C09C1/043—Zinc oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
- Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
- Y10T428/2995—Silane, siloxane or silicone coating
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Pigments, Carbon Blacks, Or Wood Stains (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08163703 | 2008-09-04 |
Publications (2)
| Publication Number | Publication Date |
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| TW201016614A TW201016614A (en) | 2010-05-01 |
| TWI488815B true TWI488815B (zh) | 2015-06-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| TW098129750A TWI488815B (zh) | 2008-09-04 | 2009-09-03 | 經改質顆粒及包含其之分散液 |
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| EP (1) | EP2321373A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5599797B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20110066162A (cg-RX-API-DMAC7.html) |
| CN (1) | CN102144004B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI488815B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2010026102A1 (cg-RX-API-DMAC7.html) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2376230B1 (de) | 2008-12-11 | 2014-07-30 | Basf Se | Anreicherung von werterzen aus minenabfall (tailings) |
| WO2010066768A2 (de) * | 2008-12-12 | 2010-06-17 | Basf Se | Dispersionen enthaltend funktionalisierte oxidische nanopartikel |
| PE20120730A1 (es) | 2009-03-04 | 2012-06-15 | Basf Se | Separacion magnetica de minerales metalicos no ferrosos por acondicionamiento en multiples etapas |
| CN102612406A (zh) * | 2009-11-20 | 2012-07-25 | 巴斯夫欧洲公司 | 用于制备羧酸和/或羧酸酐的在至少一个催化剂层中具有锑酸钒的多层催化剂及具有低热点温度的制备邻苯二甲酸酐的方法 |
| KR20120123343A (ko) | 2009-12-18 | 2012-11-08 | 바스프 에스이 | 저온에서 용액으로부터 가공될 수 있는 유전체를 갖는 기계적 가요성 중합체 기판 상의 금속 산화물 전계 효과 트랜지스터 |
| US20110230668A1 (en) * | 2010-03-19 | 2011-09-22 | Basf Se | Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide |
| TW201206896A (en) | 2010-04-13 | 2012-02-16 | Basf Se | Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride |
| KR20180100248A (ko) | 2010-04-23 | 2018-09-07 | 픽셀리전트 테크놀로지스 엘엘씨 | 나노결정의 합성, 캐핑 및 분산 |
| KR20130057439A (ko) | 2010-04-28 | 2013-05-31 | 바스프 에스이 | 아연 착물 용액의 제조 방법 |
| US8865000B2 (en) | 2010-06-11 | 2014-10-21 | Basf Se | Utilization of the naturally occurring magnetic constituents of ores |
| US8859459B2 (en) | 2010-06-30 | 2014-10-14 | Basf Se | Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride |
| US9212157B2 (en) | 2010-07-30 | 2015-12-15 | Basf Se | Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride |
| US9376457B2 (en) | 2010-09-03 | 2016-06-28 | Basf Se | Hydrophobic, functionalized particles |
| JP2014503446A (ja) | 2010-10-27 | 2014-02-13 | ピクセリジェント・テクノロジーズ，エルエルシー | ナノ結晶の合成、キャップ形成および分散 |
| US9359689B2 (en) | 2011-10-26 | 2016-06-07 | Pixelligent Technologies, Llc | Synthesis, capping and dispersion of nanocrystals |
| KR101978835B1 (ko) * | 2012-03-16 | 2019-05-15 | 한국전자통신연구원 | 박막 트랜지스터 |
| JP6108563B2 (ja) * | 2013-02-04 | 2017-04-05 | 国立研究開発法人産業技術総合研究所 | 抵抗体、誘電体等の電子部品用無機材料ペースト及び該無機材料ペーストの製造方法 |
| FI130559B (en) * | 2021-06-23 | 2023-11-21 | Turun Yliopisto | Semiconductor structure, semiconductor device, and method |
| KR102756449B1 (ko) * | 2022-02-11 | 2025-01-21 | 한인정밀화학(주) | 양자점 조성물, 이로부터 형성된 경화 패턴, 및 이를 포함하는 디스플레이 장치 |
| CN118039856A (zh) * | 2024-02-19 | 2024-05-14 | 贵州大学 | 锂电池用包覆及掺杂改性的高镍正极材料和低温电解液 |
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| US20030161959A1 (en) * | 2001-11-02 | 2003-08-28 | Kodas Toivo T. | Precursor compositions for the deposition of passive electronic features |
| CN1747783A (zh) * | 2003-02-06 | 2006-03-15 | 布勒潘泰克有限公司 | 官能胶体的化学机械制备 |
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|---|---|---|---|---|
| US2303330A (en) * | 1942-02-02 | 1942-12-01 | New Jersey Zinc Co | Zinc oxide |
| DE19907704A1 (de) * | 1999-02-23 | 2000-08-24 | Bayer Ag | Nanopartikuläres, redispergierbares Fällungszinkoxid |
| DE10063092A1 (de) | 2000-12-18 | 2002-06-20 | Henkel Kgaa | Nanoskalige Materialien in Hygiene-Produkten |
| JP2003073122A (ja) * | 2001-09-04 | 2003-03-12 | Mitsui Chemicals Inc | 無機微粒子分散液及びそれを用いて製造される複合材料組成物 |
| JP2004010807A (ja) * | 2002-06-10 | 2004-01-15 | Toyo Ink Mfg Co Ltd | 水性分散体の製造方法 |
| CN1330559C (zh) * | 2002-06-12 | 2007-08-08 | 日本板硝子株式会社 | 薄片形式的多孔金属氧化物材料、其生产方法和包含它的化妆品、涂布材料、树脂组合物、油墨组合物和纸张 |
| JP2004182483A (ja) * | 2002-11-29 | 2004-07-02 | Mitsubishi Chemicals Corp | 酸化亜鉛超微粒子の製造方法 |
| DE10257388A1 (de) | 2002-12-06 | 2004-06-24 | Sustech Gmbh & Co. Kg | Nanopartikuläres redispergierbares Zinkoxidpulver |
| US20060264520A1 (en) | 2003-03-31 | 2006-11-23 | Shuji Sonezaki | Surface-modified titanium dioxide fine particles and dispersion comprising the same, and method for producing the same |
| JP5014796B2 (ja) * | 2004-09-30 | 2012-08-29 | 株式会社カネカ | ポリマー修飾金属カルコゲン化物ナノ粒子の製造方法 |
| DE102004048230A1 (de) * | 2004-10-04 | 2006-04-06 | Institut für Neue Materialien Gemeinnützige GmbH | Verfahren zur Herstellung von Nanopartikeln mit maßgeschneiderter Oberflächenchemie und entsprechenden Kolloiden |
| DE102005007374A1 (de) | 2005-02-17 | 2006-08-24 | Universität Ulm | Nanopartikel und deren Verwendung |
| JP4918994B2 (ja) * | 2005-05-30 | 2012-04-18 | 住友電気工業株式会社 | 金属被膜の形成方法および金属配線 |
| DE102005047807A1 (de) | 2005-06-04 | 2006-12-07 | Solvay Infra Bad Hönningen GmbH | Modifizierte Nanopartikel |
| US7691666B2 (en) * | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| JP4738931B2 (ja) * | 2005-07-29 | 2011-08-03 | 富士フイルム株式会社 | ナノ粒子分散液、それを用いた半導体デバイスの製造方法及び半導体デバイス |
| KR100768632B1 (ko) * | 2006-10-30 | 2007-10-18 | 삼성전자주식회사 | 나노입자의 분산방법 및 이를 이용한 나노입자 박막의제조방법 |
| KR20080108767A (ko) * | 2007-06-11 | 2008-12-16 | 삼성에스디아이 주식회사 | 전극 단자부 코팅재 및 이를 구비한 플라즈마 디스플레이패널 |
-
2009
- 2009-08-28 KR KR1020117007826A patent/KR20110066162A/ko not_active Abandoned
- 2009-08-28 JP JP2011525509A patent/JP5599797B2/ja not_active Expired - Fee Related
- 2009-08-28 CN CN200980134455.XA patent/CN102144004B/zh not_active Expired - Fee Related
- 2009-08-28 EP EP09782305A patent/EP2321373A1/de not_active Withdrawn
- 2009-08-28 US US13/062,229 patent/US8734899B2/en not_active Expired - Fee Related
- 2009-08-28 WO PCT/EP2009/061103 patent/WO2010026102A1/de not_active Ceased
- 2009-09-03 TW TW098129750A patent/TWI488815B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030161959A1 (en) * | 2001-11-02 | 2003-08-28 | Kodas Toivo T. | Precursor compositions for the deposition of passive electronic features |
| CN1747783A (zh) * | 2003-02-06 | 2006-03-15 | 布勒潘泰克有限公司 | 官能胶体的化学机械制备 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110163278A1 (en) | 2011-07-07 |
| TW201016614A (en) | 2010-05-01 |
| CN102144004B (zh) | 2014-11-26 |
| EP2321373A1 (de) | 2011-05-18 |
| US8734899B2 (en) | 2014-05-27 |
| JP2012501941A (ja) | 2012-01-26 |
| KR20110066162A (ko) | 2011-06-16 |
| WO2010026102A1 (de) | 2010-03-11 |
| JP5599797B2 (ja) | 2014-10-01 |
| CN102144004A (zh) | 2011-08-03 |
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