TWI495630B - 用於印刷電子組件之功能性材料 - Google Patents

用於印刷電子組件之功能性材料 Download PDF

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Publication number
TWI495630B
TWI495630B TW098146018A TW98146018A TWI495630B TW I495630 B TWI495630 B TW I495630B TW 098146018 A TW098146018 A TW 098146018A TW 98146018 A TW98146018 A TW 98146018A TW I495630 B TWI495630 B TW I495630B
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Taiwan
Prior art keywords
oxide
layer
precursor
indium
gallium
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TW098146018A
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English (en)
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TW201035018A (en
Inventor
Ralf Kuegler
Andreas Klyszcz
Sabine Renker
Joerg J Schneider
Rudolf Hoffmann
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Merck Patent Gmbh
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Publication of TW201035018A publication Critical patent/TW201035018A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
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    • C07C249/00—Preparation of compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C249/04—Preparation of compounds containing nitrogen atoms doubly-bound to a carbon skeleton of oximes
    • C07C249/08—Preparation of compounds containing nitrogen atoms doubly-bound to a carbon skeleton of oximes by reaction of hydroxylamines with carbonyl compounds
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    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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Description

用於印刷電子組件之功能性材料
本發明係關於一種用於電子組件之含鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫之前驅物，以及係關於一種製備方法。此外，本發明係關於一種相應的印刷電子組件及適用於該等之製造方法。
就印刷電子於大量應用(例如RFID(=無線射頻識別)晶片於獨立包裝上)中之用途而言，需要使用已建立的大量印刷方法。一般而言，印刷電子組件以及系統係由複數種材料組件組成，諸如：用於(例如)觸點之導體、半導體(例如作為活性材料)及絕緣體(例如作為障壁層)。
製造方法一般係由以下步驟組成：一沉積步驟，即塗佈各材料於載體材料(基板)上；以及後續流程步驟，其確保該材料所希望的特性。就對大量加工(例如卷軸式加工)之適宜性而言，可使用可撓性基板(薄膜或箔片)。用於製造印刷電路之先前方法具有本質優勢，但亦具有劣勢：習知技術(參見WO 2004086289)：在此，習知Si邏輯單元之混合體與其他結構化或印刷組件(例如在RFID晶片的情況下為金屬天線)係以成本密集型方式組合。然而，此方法就實際大量應用而言，被認為係過於複雜。
有機材料(參見DE 19851703、WO 2004063806、WO 2002015264)：此等系統係基於自液相之聚合物之印刷電子組件。與先前已知材料(習知技術)相比，此等系統之區別在於自溶液之簡單加工。此處僅需考慮的製程步驟為乾燥溶劑。然而，在例如半導體或導體材料之情況下，可達到的效率係受限於限制材料一般特性，諸如歸因於所謂的跳躍機制之電荷載子遷移率<10cm2 /Vs。此限制影響應用可能性：印刷電晶體的效率隨著半導體通道尺寸的減少而增加，其目前使用大量方法不可能經印刷成小於約40μm。另一技術之限制為有機組件對環境條件之敏感性。此使得在製造期間流程之性能複雜化以及可能造成印刷組件的壽命減少。
無機材料：歸因於與有機材料相比之不同的內在特性(諸如對UV-誘發之降解安定性)，此類材料一般具有增加用於印刷電子之效率的潛力。
原則上，在此領域中可使用兩種不同方法：
i)自氣相且無額外處理步驟之製備：在此情況下，可製造絕緣性極佳之薄層，但相關的成本密集型真空技術及緩慢的層體生長限制其在大規模市場的使用。
ii)自前驅物材料開始之濕化學製備，其中該等材料係自液相施用，例如藉由旋塗或印刷(參見US 6867081、US 6867422、US 2005/0009225)。在某些情況下，亦可使用無機材料與有機基質之混合物(參見US 2006/0014365)。
為確保所製造層整層之電學特性，有必要進行蒸發溶劑之外的處理步驟。在所有的情況下，有必要形成一具有相互重疊的區域之形態，其中自濕相之前驅物經另外轉化成所需活性材料。此產生所需功能性(在半導體情況下：高電荷載子遷移率)。因此，在>300℃之溫度下施行該製程，但此會妨礙此製程在薄膜塗覆中之使用。
使用MgO之前驅物材料之實例係闡述於(例如)Stryckmans等人之Thin Solid Films 1996，283，17(在高於260℃下自乙醯丙酮酸鎂)或Raj等人之Crystal Research and Technology 2007，42，867(自300℃自乙酸鎂之若干步驟中)中。在此兩種情況下，對於自氣相之層沉積係利用噴霧熱解。在此情況下，此等溶液經噴霧於加熱基板上(高於400℃)及視需要在甚至更高的溫度下經後續處理。在印刷製程中必須避免使用此高溫。
使用可溶性ZrO2 前驅物材料之實例係闡述於Ismail等人之Powder Technology 1995，85,253(在200至600℃之間的溫度下，自乙醯丙酮酸鋯經若干小時)中。
使用可溶性HfO2 之實例係已知，例如見於Zherikova等人之Journal of Thermal Analysis and Calorimetry 2008，92，729(於T=150至500℃之間的溫度下，自乙醯丙酮酸鉿經若干小時)。
β-二酮酸鹽(諸如鋯及鉿之乙醯丙酮酸鹽)係藉由化學氣相沉積(CVD)用於自汽相之層沉積中。此處，該等化合物係在高真空下經蒸發且經沉積於加熱基板上(高於500℃)。經由若干離散的中間物進行轉化成氧化陶瓷，但其等並未使用作功能性材料。因此需要可確保確定的反應之高溫，此避免使用於印刷製程中。
對於製備銦錫氧化物(簡稱「ITO」)，所用的前驅物係例如在胺(諸如乙醇胺)存在下之錫及銦鹽之溶膠(Prodi等人之Journal of Sol-Gel Science and Technology 2008，47，68)。此處轉化成氧化物係在高於500至600℃的溫度下施行。在對於溫度敏感性基板之印刷製程中必須避免此用此高溫。
非晶形、半導氧化物陶瓷之製備係有利的(K. Nomura等人，Nature 2004，432，488-492；H. Hosono Journal of Non-Crystalline Solids 2006，352，851-858；T. Kamiya等人，Journal of Display Technology 2009，5，273-288)。銦-鎵-錫-鋅-氧相系統在此已經詳細研究。典型實例為氧化銦鎵鋅(簡稱「IGZO」)，以及氧化鋅錫(簡稱「ZTO」)，亦及銦氧化鋅錫(簡稱「IZTO」)。
半導層之沉積一般藉由氣相進行，但基於溶液之製程亦為已知。然而，此處所用溶膠使得相對高溫製程溫度成為必要。氧化鋅錫可在鹼(諸如乙醇胺)存在下，自無水氯化錫(II)或乙酸錫(II)以及乙酸鋅六水合物獲得。轉化成氧化物(錫組份之氧化)係在至少350℃(D. Kim等人，Langmuir 2009，25，11149-11154)或400至500℃(S.J. Seo等人，Journal of Physics D: Applied Physics，2009，42，035106)下進行，其取決於煅燒期間在空氣中之反應性能。銦鋅氧化物係自以下程序獲得：將於乙二醇中之無水氯化銦、氯化鋅及氯化錫(II)與氫氧化鈉溶液反應，隨後在600℃下煅燒(D.H. Lee等人，Journal of Materials Chemistry 2009，19，3135-3137)。
此等用於製造印刷電路之習知前驅物之用途受限於其於大量印刷應用之批量生產之適用範圍。
因此，本發明之目標為提供一種無機材料，其介電性、半導電及導電特性一方面可藉由材料組成而調整，且另一方面可藉由印刷材料之製備方法而調整。為此，該目標為開發保持無機材料的優勢之材料系統。應可藉由印刷製程處理來自濕相之材料。在每種情況下，於平面及可撓基板上的所需材料之電子效率應利用一僅需要低能量輸入之製程步驟產生。
令人驚訝的是，現已開發一種方法，其中製備新穎的有機金屬前驅物材料、施加於表面以及隨後在低溫下轉化成介電活性(即絕緣)材料亦轉化成電半導體或導體材料。此製程中所製造之層係藉由對印刷製程有利之表面特性來區別。
因此，本發明係關於一種用於塗覆電子組件之前驅物，其特徵為：其包含一種有機金屬鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫錯合物或其混合物，其含有至少一個來自肟酸鹽類之配位體。
若以一適宜方法反應進行，則前驅物亦可經製備成不含鹼金屬。此可對電子組件中之用途有利，因為含鹼金屬殘餘物在電子特性上有不利作用。作為晶體中的外來原子，此等元素會對該等特性產生不利影響。
在一較佳實施例中，前驅物係可印刷的且呈印刷墨水或印刷漿形式用於塗覆印刷場效應電晶體(FET)，較佳為薄膜電晶體(TFT)。
術語「可印刷前驅物」意指前驅物材料由於其材料特性，可藉由印刷製程自濕相經處理。在此印刷製程中，視印刷製程而定，印刷墨水或印刷漿係自儲備容器經輸送至基板。
前驅物材料因此必須能夠轉化成此種類型之印刷墨水或印刷漿，其在印刷製程期間具有一黏度及安定性且適用於該印刷製程，以及具有對基板適宜的可濕性及黏著性。
經驗顯示對於不同印刷製程較好使用不同黏度範圍之墨水或漿；舉例而言，對於噴墨印刷(熱)為1至5mPa‧s、對於噴墨印刷(壓電)為5至20mPa‧s、對於凹版印刷為50至200mPa‧s、對於軟版印刷為50至500mPa‧s以及對於絲網印刷為2000至40,000mPa‧s。
如上所述，該前驅物包括具有至少一個自肟酸鹽類之配位體之有機金屬鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫錯合物。根據本發明之鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫錯合物之配位體較佳包含2-(甲氧基亞胺基)烷酸鹽、2-(乙氧基亞胺基)烷酸鹽或2-(羥基亞胺基)烷酸鹽。此等配位體係藉由在鹼存在下，使α-酮基酸或氧代羧酸與羥胺或烷基羥胺於水溶液或甲醇溶液中縮合而合成。
前驅物或鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫錯合物係在室溫下在鹼(諸如四乙基銨碳酸氫鹽或碳酸氫鈉)存在下，使氧代羧酸與至少一種羥胺或烷基羥胺反應，且隨後添加無機鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫鹽(諸如硝酸鋁九水合物、硝酸鎵六水合物、無水三氯化釹、三氯化釕六水合物、硝酸鎂六水合物、氧氯化鋯八水合物、氧氯化鉿八水合物、無水氯化銦及/或氯化錫五水合物)而形成。或者，可在至少一種羥胺或烷基羥胺的存在下，使氧代羧酸與鎂、鉿或鋯之羥碳酸鹽(諸如水菱鎂礦Mg5 (CO3 )4 (OH)2 ‧4H2 O)反應。
可使用之氧代羧酸係此類化合物之所有代表例。然而，較佳使用氧代乙酸、氧代丙酸或氧代丁酸。
鋁、鎵、釹、鎂、鉿或鋯錯合物前驅物轉化成具有絕緣特性之功能性氧化鋁、氧化鎵、氧化釹、氧化鎂、氧化鉿或氧化鋯層之熱轉化或釕錯合物前驅物轉化成氧化釕層之熱轉化係在的溫度下進行。此溫度較佳在150至200℃之間。
銦與錫錯合物前驅物轉化成具有導電特性之功能性銦錫氧化物層之熱轉化係在的溫度下進行。此溫度較佳在150至250℃之間。
銦、鎵及鋅錯合物前驅物轉化成具有半導體特性之功能性氧化銦鎵鋅層之熱轉化係在的溫度下進行。此溫度較佳在150與250℃之間。
鋅與錫錯合物前驅物轉化成具有半導體特性之功能性氧化鋅錫層之熱轉化係在的溫度下進行。此溫度較佳在150與250℃之間。
在另一較佳實施例中，鋁、鎵、釹、鎂、鉿或鋯錯合物前驅物轉化成具有絕緣特性之功能性鋁、鎵、釹、鎂、鉿或鋯氧化物層之轉化或釕錯合物前驅物轉化成釕氧化物之轉化或銦與錫錯合物前驅物轉化成具有導體特性之功能性銦錫氧化物層之轉化或銦-鎵-鋅與錫錯合物前驅物轉化成具有半導體特性之功能性氧化層之轉化係藉由波長<400nm的UV光輻射進行。波長較佳在150與380nm之間。利用UV輻射之優勢在於所製造的氧化鋁、氧化鎵、氧化釹、氧化釕、氧化鎂、氧化鉿、氧化鋯、銦錫氧化物以及氧化銦鎵鋅或鋅錫氧化層因此具有較低表面粗糙度。此係因為對於隨後薄的層而言，所增加的表面粗糙度會增加此等層無法均勻形成以及因此無電氣功能性之風險(諸如由於介電層損壞而造成短路)。
自相應前驅物所製造的氧化鋁、氧化鎵、氧化釹、氧化鎂、氧化鉿或氧化鋯層在兩導體之間展現出>0.1MV/cm的崩潰電壓。較佳的崩潰電壓為1至10MV/cm之間。
崩潰電壓可藉由述於DIN EN ISO 2376：2009-07之測量及評估方法測定。
銦錫氧化層(ITO層)較佳具有<10-3 ohm.cm的電阻率(藉由四點測量法測定)。以10-3 至10-5 ohm.cm之間的電阻率較佳。
導電性可藉由直流電四探針法測定。此測量方法係闡述於DIN 50431或ASTM F43-99中。
氧化銦鎵鋅(IGZO)層或氧化鋅錫(ZTO)層較佳具有>10-3 cm2 /Vs的電荷載子遷移率。電荷載子遷移率較佳為0.1至10cm2 /Vs。
半導體材料參數之特性分析及測定係藉由闡述於IEEE 1620中之測量以及評估方法而施行。
此外，本發明係關於根據本發明之有機金屬鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫錯合物或前驅物之用於製造場效應電晶體中之一或多種功能性層之用途。
根據本發明，此基板可為固體基板(諸如玻璃、陶瓷、金屬或塑料基板)，或可撓性基板，特別是塑料薄膜或金屬箔片。根據本發明，較佳使用可撓性基板(薄膜或箔片)。
熟悉此項技術者已知：根據本發明前驅物溶液係藉由(諸如)浸塗、旋塗及噴墨印刷或軟版/凹版印刷之方法施加於基板上(參見M.A. Aegerter，M. Menning；Sol-Gel Technologies for Glass Producers and Users，Kluwer Academic Publishers，Dordrecht，Netherlands，2004)，其中根據本發明以噴墨印刷或軟版/凹版印刷較佳。
術語「場效應電晶體(FET)」意指一組單極性電晶體，其與雙極性電晶體相反，在電流運輸內僅涉及一種電荷類型－電子或電洞或缺陷電子，此取決於設計。最廣泛利用之類型的FET係MOSFET(金屬氧化物半導體FET)。
此FET具有三個連接：
‧源極；
‧閘極；
‧汲極。
在MOSFET中，亦存在第四塊體(基板)連接。在個別電晶體的情況下，此已經內部連接至源極連接且未另外連接。
根據本發明，術語「FET」一般涵蓋以下類型之場效應電晶體：
‧阻障層場效應電晶體(JFET)
‧蕭特基(Schottky)場效應電晶體(MESFET)
‧金屬氧化物半導體FET(MOSFET)
‧高電子遷移率電晶體(HEMT)
‧離子敏感場效應電晶體(ISFET)
‧薄膜電晶體(TFT)。
根據本發明，以TFT較佳，藉此可製造大面積電子電路。
此外，本發明係關於一種印刷電子組件，其具有以下薄層：
‧　一固體或可撓性、導電基板或一具有導電層(閘極)之絕緣性基板；
‧　一包括可自含有至少一個自肟酸鹽類之配位體之相應前驅物、有機金屬鋁、鎵、釹、鎂、鉿或鋯錯合物獲得之鋁、鎵、釹、鎂、鉿或鋯之氧化物之絕緣體；
‧　至少一電極(汲極電極)；
‧　一半導體。
該鋁、鎵、釹、鎂、鉿或鋯之氧化物層具有15nm至1μm，較佳為30nm至750nm的厚度。層厚度取決於各情況所用之塗覆技術及其參數。在旋塗的情況下，此等參數為(例如)旋轉速度及持續時間。
此外，本發明係關於一種印刷電子組件，其包含以下薄層：
‧　一固體或可撓性、導電基板或一具有導電層(閘極)之絕緣性基板，該導電層包括自含有至少一個自肟酸鹽類之配位體之相應前驅物、有機金屬銦與錫錯合物獲得之銦錫氧化物(ITO)；
‧　一絕緣體；
‧　至少一電極(汲極電極)；
‧　一半導體。
該銦錫氧化物層(ITO層)具有15nm至1μm，較佳為100nm至500nm的厚度。層厚度取決於各情況使用之塗覆技術及其參數。在旋塗的情況下，此等參數為(例如)旋轉速度及持續時間。
此外，本發明係關於一種印刷電子組件，其包含以下薄層：
‧　一固體或可撓性、導電基板或一具有導電層(閘極)之絕緣性基板；
‧　一絕緣體；
‧　至少一電極(汲電極)；
‧　一半導體。該半導體應由多元非晶相組成，其包括可自含有至少一個來自肟酸鹽類之配位體之相應的前驅物、有機金屬銦、鎵、鋅錯合物或鋅與錫之錯合物獲得之氧化銦鎵鋅(IGZO)或氧化鋅錫(ZTO)。
該銦鎵錫氧化物(IGZO)層或氧化鋅錫(ZTO)層具有15nm至1μm，較佳為20nm至200nm的厚度。層厚度取決於各情況所用之塗覆技術及其參數。在旋塗的情況下，此等參數為(例如)旋轉速度及持續時間。
在一較佳實施例中，上述之電子組件係由場效應電晶體或薄膜電晶體組成，該電晶體由閘極、絕緣層、半導體及電極(汲極及源極)構成。該閘極較佳係由以下元件組成：高n-摻雜的矽晶圓、高n-型摻雜的矽薄層、導電性聚合物(例如聚吡咯-聚胺基苯磺酸或聚伸乙二氧基噻吩-聚苯乙烯磺酸(PEDOT-PSS))、導電性陶瓷(例如銦錫氧化物(ITO)或摻雜Al、Ga或In之錫氧化物(AZO、GZO、lZO)及摻雜F或Sb之錫氧化物(FTO、ATO))或金屬(諸如金、銀、鈦、鋅)，端視作為薄層或基板材料之設計而定。根據設計，在該配置中，該薄層可塗佈於半導體或絕緣層之下面(底部閘極)或上面(頂部閘極)。
此電子組件較佳具有一絕緣層，該絕緣層係由聚合物(諸如聚(4-乙烯基苯酚)、聚甲基丙烯酸甲酯、聚苯乙烯、聚醯亞胺或聚碳酸酯)或陶瓷(諸如氧化矽、氮化矽、氧化鋁、氧化鎵、氧化釹、氧化鎂、氧化鉿、氧化鋯)組成。
此電子組件較佳具有一半導層，其係由一半導體有機化合物(諸如聚噻吩、寡聚噻吩或聚三芳基胺)或陶瓷(諸如鋅氧化物、氧化銦鎵鋅(IGZO)或氧化鋅錫(ZTO))組成。
此電子組件較佳具有源極及汲極電極，其包括高n型摻雜矽薄層、導電性聚合物(諸如聚吡咯-聚胺基苯磺酸或聚伸乙二氧基噻吩-聚苯乙烯磺酸(PEDOT-PSS))、導電性陶瓷(例如銦錫氧化物(ITO)或摻雜Al、Ga或In之錫氧化物(AZO、GZO、lZO)及摻雜F或Sb之錫氧化物(FTO、ATO))或金屬(諸如金、銀、鈦、鋅)。根據設計，在該配置中，該等電極(較佳根據本發明設計為薄層)可經配置於半導體或絕緣層之下面(底面觸點)或上面(上面觸點)(參見圖8a及b)。
在以上提及之較佳實施例中，該閘極、絕緣體及半導體可以非結構化方式，藉由自氣相或液相之旋塗或浸塗或沉積技術而塗佈。此外，該閘極、絕緣體、半導體及電極可以結構化方式，藉由自氣相或液相之軟版/凹版印刷、噴墨印刷或沉積技術而塗佈。根據本發明，以印刷製程較佳。
此外，本發明係關於一種用於製造具有鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫之氧化物層或表面或其混合物之電子結構之方法，其特徵為：
a)藉由浸塗、旋塗或噴墨印刷或軟版/凹版印刷將本發明之包括有機金屬鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫之錯合物或其混合物之前驅物溶液以相應的待達成之電子結構之一或多層塗佈於基材上，
b)在空氣或氧氣氣氛中加熱或乾燥經塗佈之前驅物層，形成鋁、鎵、釹、釕、鎂、鉿、鋯、銦、錫或銦錫之氧化物層或表面，
c)最終，可藉由絕緣層將塗佈之電子結構密封且配備觸點並最終完成。
藉由此方法，於積體電路中同時產生電子組件亦及各自組件之化合物。
本發明將參考諸多闡釋性實施例進行更詳細的說明(參見圖1至8b)。
以下實例係用於闡釋本發明。然而，其等不應以任何方式被認為係限制。可用於組合物中之所有化合物或組份皆係已知且可購得或可藉由已知方法合成。
實例1：氧化鎂前驅物雙[2-(甲氧基亞胺基)丙酸]鎂之製備
攪拌下將碳酸氫鉀(12.02g，120mmol)以小量逐份添加至丙酮酸鈉(6.60g，60mmol)及甲氧基胺鹽酸鹽(5.01g，60mmol)於100ml水之溶液中。當目測氣體釋放完畢時，該混合物又攪拌30分鐘。隨後添加硝酸鎂六水合物(7.69g，30mmol)，且該混合物又攪拌一小時。於旋轉蒸發器中將澄清溶液濃縮至原體積的一半，並將其冷卻至約5℃。將已形成的白色沉澱物濾出及自熱水中再結晶。產率為2.60g(34.8%)。藉由IR及NMR光譜分析將以此方法獲得之化合物進行特徵分析。
實例2：氧化鎂前驅物雙[2-(甲氧基亞胺基)丙酸]鎂之不含鹼金屬製備
或者，可進行以下反應製程：將水菱鎂礦(20.0g)逐份添加至丙酮酸(10.56g，120mmol)與甲氧基胺鹽酸鹽(10.04g，120mmol)於100ml水之溶液中。當目測氣體釋放完畢時，將該混合物攪拌一小時，並將未經反應之水菱鎂礦濾出。於旋轉蒸發器中將澄清溶液濃縮至原體積的一半，並將其冷卻至約5℃。將已形成的白色沉澱物濾出並且自熱水再結晶。產率為6.50g(43.5%)。藉由IR及NMR光譜分析將以此方式獲得之化合物進行特徵分析。
實例3：自具有絕緣體特性的鎂前驅物(獲自實例1或2)製造未經摻雜的氧化鎂層
藉由旋塗(或浸塗或噴墨印刷)將根據實例1或2所製備之肟酸鎂塗佈於玻璃、陶瓷或聚合物基板上。隨後將該塗層在高於210℃的溫度於空氣中加熱10分鐘。以此方式所獲得之氧化鎂薄膜展現出均一、無裂縫、無孔表面之形態。視煅燒溫度而定，該等層係由非晶形或奈米微晶材料組成。該等層具有絕緣體性質。
實例4：二氧化鋯前驅物羥基[2-(甲氧基亞胺基)丙酸]鋯之製備
攪拌下將碳酸氫鈉(7.56g，90mmol)以小量逐份添加至丙酮酸鈉(9.90g，90mmol)與甲氧基胺鹽酸鹽(7.53g，90mmol)於100ml水之溶液中。當目測氣體釋放完畢時，該混合物又攪拌30分鐘。隨後將該混合物於旋轉蒸發器中蒸發至完全乾燥。將四氯化鋯(5.24g，22.5mmol)之125ml四氫呋喃之溶液添加至經由此方式所得白色粉末中，並將該混合物攪拌2小時。將該溶液過濾並於旋轉蒸發器中蒸發至乾。將殘餘物投入100ml二氯甲烷中，並將以此方式所獲得之懸浮液再次過濾。隨後使用大量的正己烷自濾液沉澱出產物，過濾並於乾燥器中乾燥。產率為3.50g。藉由IR及NMR光譜分析將以此方式獲得之化合物進行特徵分析。
實例5：自二氧化鋯前驅物製造氧化鋯層
藉由旋塗(或浸塗或噴墨印刷)將根據實例4所製備之肟酸鋯塗佈於玻璃、陶瓷或聚合物基板上。隨後將該塗層在高於200℃的溫度於空氣中加熱10分鐘或經150mW/cm2 之UV輻射15分鐘。以此方式所獲得之氧化鋯薄膜展現出均一、無裂痕、無孔表面之形態。視煅燒溫度而定，該等層係由非晶形或奈米微晶材料組成。該等層體具有絕緣體特性。
實例6：二氧化鉿前驅物羥基[2-(甲氧基亞胺基)丙酸]鉿之製備
攪拌下將碳酸氫鈉(7.56g，90mmol)以小量逐份添加至丙酮酸鈉(9.90g，90mmol)與甲氧基胺鹽酸鹽(7.53g，90mmol)於100ml水之溶液中。當目測氣體釋放完畢時，該混合物又攪拌30分鐘。隨後將該混合物於旋轉蒸發器中蒸發至完全乾燥。將四氯化鉿(7.21g，22.5mmol)於125ml四氫呋喃中之溶液添加至經由此方式所得白色粉末中，並將該混合物攪拌2小時。將該溶液過濾並於旋轉蒸發器中蒸發至乾。將殘餘物投入100ml二氯甲烷中，並將以此方式所獲得之懸浮液再次過濾。隨後使用大量的正己烷自濾液沉澱出產物，過濾並於乾燥器中乾燥。產率為4.75g。藉由IR及NMR光譜分析將以此方式獲得之化合物進行特徵分析。
實例7：具有絕緣體特性之氧化鉿層之製造
藉由旋塗(或浸塗或噴墨印刷)將根據實例6製備之肟酸鉿塗佈於玻璃、陶瓷或聚合物基板上。隨後將該塗層在高於200℃的溫度於空氣中加熱10分鐘或經150mW/cm2 之UV輻射15分鐘。以此方式所獲得之氧化鉿薄膜展現出均一、無裂痕、無孔表面之形態。視煅燒溫度而定，該等層係由非晶形或奈米微晶材料組成。該等層體具有絕緣體特性。
實例8：氧化鋁前驅物三[2-(甲氧基亞胺基)丙酸]鋁之製備
攪拌下將碳酸氫鈉(1.68g，20mmol)以小量逐份添加至丙酮酸鈉(2.20g，20mmol)與甲氧基胺鹽酸鹽(1.67g，20mmol)於50ml水之溶液中。當目測氣體釋放完畢時，該混合物又攪拌30分鐘。隨後將該混合物於旋轉蒸發器中蒸發至完全乾燥。將硝酸鋁九水合物(2.50g，6.6mmol)於125ml甲醇中之溶液添加至經由此方式所得白色粉末中，並將該混合物攪拌2小時。將該溶液過濾並於旋轉蒸發器中蒸發至乾。將殘餘物投入50ml二氯甲烷中，並將以此方式所獲得之懸浮液再次過濾。隨後使用大量的正己烷自濾液沉澱出產物，過濾並於乾燥器中乾燥。產率為1.12g(45.30%)。藉由IR及NMR光譜分析將以此方式獲得之化合物進行特徵分析。
實例9：具有絕緣體特性之氧化鋁層之製造
藉由旋塗(或浸塗或噴墨印刷)將根據實例8製備之肟酸鋁塗佈於玻璃、陶瓷或聚合物基板上。隨後將該塗層在高於200℃的溫度於空氣中加熱10分鐘或經150mW/cm2 之UV輻射15分鐘。以此方式所獲得之氧化鋁薄膜展現出均一、無裂痕、無孔表面之形態。視煅燒溫度而定，該等層係由奈米微晶材料組成。該等層體具有絕緣體特性。
實例10：氧化鎵前驅物三[2-(甲氧基亞胺基)丙酸]鎵之製備
攪拌下將碳酸氫鈉(1.68g，20mmol)以小量逐份添加至丙酮酸鈉(2.20g，20mmol)與甲氧基胺鹽酸鹽(1.67g，20mmol)於50ml水之溶液中。當目測氣體釋放完畢時，該混合物又攪拌30分鐘。隨後將該混合物於旋轉蒸發器中蒸發至完全乾燥。將硝酸鎵六水合物(2.40g，6.6mmol)於125ml甲醇中之溶液添加至經由此方式所得白色粉末中，並將該混合物攪拌2小時。將該溶液過濾並於旋轉蒸發器中蒸發至乾。將殘餘物投入100ml二氯甲烷中，並將以此方式所獲得之懸浮液再次過濾。隨後使用大量的正己烷自濾液沉澱出產物，過濾並於乾燥器中乾燥。產率為0.96g(34.82%)。藉由IR及NMR光譜分析將以此方式獲得之化合物進行特徵分析。
實例11：具有絕緣體特性之氧化鎵層之製造
藉由旋塗(或浸塗亦或噴墨印刷)將根據實例10製備之肟酸鎵塗佈於玻璃、陶瓷或聚合物基板上。隨後將該塗層在高於200℃的溫度於空氣中加熱10分鐘或經150mW/cm2 之UV輻射15分鐘。以此方式所獲得之氧化鎵薄膜展現出均一、無裂痕、無孔表面之形態。視煅燒溫度而定，該等層係由奈米微晶材料組成。該等層體具有絕緣體特性。
實例12：氧化釹前驅物三[2-(甲氧基亞胺基)丙酸]釹之製備
攪拌下將碳酸氫鈉(1.68g，20mmol)以小量逐份添加至丙酮酸鈉(2.20g，20mmol)與甲氧基胺鹽酸鹽(1.67g，20mmol)於50ml水之溶液中。當目測氣體釋放完畢時，該混合物又攪拌30分鐘。隨後將該混合物於旋轉蒸發器中蒸發至完全乾燥。將無水三氯化釹(1.65g，6.6mmol)於125ml甲醇中之溶液添加至經由此方式所得白色粉末中，並將該混合物攪拌2小時。將該溶液過濾並於旋轉蒸發器中蒸發至乾。將殘餘物投入100ml二氯甲烷中，並將以此方式所獲得之懸浮液再次過濾。隨後使用大量的正己烷自濾液沉澱出產物，過濾出並於乾燥器中乾燥。產率為1.55g(47.83%)。藉由IR及NMR光譜分析將以此方式獲得之化合物進行特徵分析。
實例13：具有絕緣體特性之氧化釹層之製造
藉由旋塗(或浸塗亦或噴墨印刷)將根據實例12製備之肟酸釹塗佈於玻璃、陶瓷或聚合物基板上。隨後將該塗層在高於200℃的溫度於空氣中加熱10分鐘或經150mW/cm2 之UV輻射15分鐘。以此方式所獲得之氧化釹薄膜展現出均一、無裂痕、無孔表面之形態。視煅燒溫度而定，該等層係由非晶形或奈米微晶材料組成。該等層體具有絕緣體特性。
實例14：氧化釕前驅物三[2-(甲氧基亞胺基)丙酸]釕之製備
攪拌下將碳酸氫鈉(1.68g，20mmol)以小量逐份添加至丙酮酸鈉(2.20g，20mmol)與甲氧基胺鹽酸鹽(1.67g，20mmol)於50ml水之溶液中。當目測氣體釋放完畢時，該混合物又攪拌30分鐘。隨後將該混合物於旋轉蒸發器中蒸發至完全乾燥。將三氯化釕六水合物(2.08g，6.6mmol)於125ml甲醇中之溶液添加至經由此方式所得白色粉末中，並將該混合物攪拌2小時。將該溶液過濾並於旋轉蒸發器中蒸發至乾。將殘餘物投入100ml二氯甲烷中，並將以此方式所獲得之懸浮液再次過濾。隨後使用大量的甲苯自濾液沉澱出產物，過濾並於乾燥器中乾燥。產率為1.34g(45.33%)。藉由IR及NMR光譜分析將以此方式獲得之化合物進行特徵分析。
實例15：氧化釕層之製造
藉由旋塗(或浸塗或噴墨印刷)將根據實例14製備之肟酸釕塗佈於玻璃、陶瓷或聚合物基板上。隨後將該塗層在高於200℃的溫度於空氣中加熱10分鐘或經150mW/cm2 之UV輻射15分鐘。以此方式所獲得之氧化釕薄膜展現出均一、無裂痕、無孔表面之形態。視煅燒溫度而定，該等層係由奈米微晶材料組成。
實例16：介電層之製造
此實例顯示介電層之製造。氧化鋯層係藉由旋塗或印刷塗佈於導電性高n型摻雜矽晶圓上且係藉由隨後在200℃下煅燒10分鐘或經150mW/cm2 之UV輻射15分鐘而形成。施加對向電極後，可測定該介電層之崩潰電壓值為1MV/cm。
實例17：薄膜電晶體之製造
此實例顯示根據圖8a與8b之場效應電晶體(FET)。該組件係由已塗佈介電層之高度n型摻雜矽晶圓組成。繼而製造一半導層，之後藉由金屬蒸汽沉積或金屬墨水印刷而製造金屬電極結構(圖8a)。或者，可先製造該電機結構，之後塗佈半導體層(8b)。
實例18：氧化銦前驅物三[2-(甲氧基亞胺基)丙酸]銦之製備
攪拌下將碳酸氫鈉(1.68g，20mmol)以小量逐份添加至丙酮酸鈉(2.20g，20mmol)與甲氧基胺鹽酸鹽(1.67g，20mmol)於50ml水之溶液中。當目測氣體釋放完畢時，該混合物又攪拌30分鐘。隨後將該混合物於旋轉蒸發器中蒸發至完全乾燥。將無水氯化銦(1.95g，6.6mmol)於125ml甲醇中之溶液添加至經由此方式所得白色粉末中，並將該混合物攪拌2小時。將該溶液過濾並於旋轉蒸發器中蒸發至乾。將殘餘物投入100ml二氯甲烷中，並將以此方式所獲得之懸浮液再次過濾。隨後使用大量的正己烷自濾液沉澱出產物，過濾並於乾燥器中乾燥。產率為1.80g(58.9%)。藉由IR及NMR光譜分析將以此方式獲得之化合物進行特徵分析。
實例19：氧化錫前驅物羥基[2-(甲氧基亞胺基)丙酸]錫之製備
攪拌下將碳酸氫鈉(7.56g，90mmol)以小量逐份添加至丙酮酸鈉(9.90g，90mmol)與甲氧基胺鹽酸鹽(7.53g，90mmol)於100ml水之溶液中。當目測氣體釋放完畢時，該混合物又攪拌30分鐘。隨後將該混合物於旋轉蒸發器中蒸發至完全乾燥。將氯化錫五水合物(7.88g，22.5mmol)於250ml甲醇中之溶液添加至經由此方式所得白色粉末中，並將該混合物攪拌2小時。將該溶液過濾並於旋轉蒸發器中蒸發至乾。將殘餘物投入100ml丙酮或二甲氧基乙烷中，並將以此方式所獲得之懸浮液再次過濾。隨後使用大量的二乙基醚自濾液沉澱出產物，過濾並於乾燥器中乾燥。產率為3.7g。藉由IR及NMR光譜分析將以此方式獲得之化合物進行特徵分析。
實例20：銦錫氧化物(ITO)之介電導電層之製造
將根據實例18與19製備之肟酸銦與肟酸錫以90：10的莫耳比率溶解在一起，並且藉由旋塗(或浸塗或噴墨印刷)塗佈於玻璃、陶瓷或聚合物基板上。隨後將該塗層在高於200℃的溫度於空氣中加熱60分鐘或經150mW/cm2 之UV輻射1小時。以此方式所獲得之銦錫氧化物薄膜展現出均一、無裂痕、無孔表面之形態。視煅燒溫度而定，該等層係由非晶形或奈米微晶材料組成。該等層具有導電性。
實例21：氧化銦鎵鋅(IGZO)半導層之製造
將根據實例10與18製備之肟酸銦及/或肟酸鎵與肟酸鋅(可藉由J.J. Schneider等人之Advanced Materials，2008，20，3383-3387之方法獲得)以適宜的莫耳比率溶解。用於製備半導相之適宜莫耳比率係見於H. Hosono之Journal of Non-Crystalline Solids 2006，352,851-858；因此，舉例而言，銦：鎵：鋅=1：1：1，或者銦：鋅=2：3。
藉由旋塗(或浸塗或噴墨印刷)將以此方式獲得之溶液塗佈於玻璃、陶瓷或聚合物基板上。隨後將該塗層在高於200℃的溫度於空氣中加熱10分鐘或經150mW/cm2 之UV輻射15分鐘。以此方式所獲得之氧化銦鎵鋅薄膜展現出均一、無裂痕、無孔表面之形態。視煅燒溫度而定，該等層係由非晶形材料組成。該等層具有半導特性。
實例22：氧化鋅錫(ZTO)之半導層之製造
將根據實例19製備之肟酸錫與肟酸鋅(可藉由J.J. Schneider等人之Advanced Materials，2008，20，3383-3387之方法獲得)以適宜的莫耳比率溶解在一起。舉例而言，宜為Sn/(Sn+Zn)係0至30的莫耳百分比之錫含量。藉由旋塗(或浸塗或噴墨印刷)將該溶液塗佈於玻璃、陶瓷或聚合物基板上。隨後將該塗層在高於200℃的溫度於空氣中加熱10分鐘或經150mW/cm2 之UV輻射15分鐘。以此方式所獲得之氧化鋅錫薄膜展現出均一、無裂痕、無孔表面之形態。視煅燒溫度而定，該等層係由非晶形或奈米微晶材料組成。該等層具有半導特性。
實例23至26：不同塗覆製程之描述
在所有情況下，使用10至20重量%的前驅物化合物之溶液。適宜溶劑為2-甲氧基乙醇、2-丁醇、甲醇、二甲基甲醯胺或其混合物。
印刷墨水之黏度可用流變儀(諸如自Haake之MARS Rheorneter)進行測定。該測定係在標準環境條件(DIN 50 014-23)下進行。
浸塗：提拉速度約1mm/sec。所用基板為76×26mm玻璃板。
旋塗：對旋塗而言，將150μl的溶液塗佈於基板上。所用基板為20×20mm石英或15×15mm矽(含用於製造FET之金電極)。對於持續時間及速度所選之參數為在最初速度1000rpm下為10s以及在最終速度2000rpm下為20s。
噴墨印刷：可使用獲自Dimatix之Dimatix DMP 2831印刷機進行印刷製程。所用印刷墨水為10重量%的鉿氧化物前驅物羥基[2-(甲氧基亞胺基)丙酸]鉿於二乙二醇單乙基醚中之溶液，其係經孔徑為0.2μm之針筒過濾器導入。薄膜可經印刷於含銦錫氧化物塗層(Merck)之基板(諸如玻璃)上，且藉由隨後之UV輻射(摻雜Fe之Hg燈；輻射持續時間：在400mW/cm2 下4分鐘)轉化成陶瓷。
軟版印刷：可使用獲自IGT測試系統之IGT F1單元進行印刷製程。
所用印刷墨水為10重量%的鉿氧化物前驅物羥基[2-(甲氧基亞胺基)丙酸]鉿於甲氧基乙醇中之溶液。將1ml的溶液手動塗佈至觸點區域。
選擇以下印刷參數以用於刮塗薄板/揚墨輥：
‧揚墨輥/印版滾筒接觸壓力10N
‧印版滾筒/逆壓滾筒接觸壓力10N
‧印刷速度0.8m/s
‧印刷板：全色調表面，90%的覆蓋範圍
‧揚墨輥吸收體積20ml/m2
可在基板上(諸如矽或石英)達到全面積印刷。隨後可藉由UV輻射將前驅物(摻雜Fe之Hg燈；輻射持續時間：在400mW/cm2 下7分鐘)轉化為陶瓷。
 圖2
1．．．鋯錯合物之曲綫
2．．．鉿錯合物之曲綫
圖3
1．．．未進一步處理
2．．．在200℃處理
3．．．在250℃處理
a．．．Zr3d信號
b．．．Nis信號
c．．．Cls信號
圖4
1．．．在210℃處理+濺射法
2．．．在450℃處理
3．．．在450℃處理+濺射法
a．．．Mgls信號
b．．．Ols信號
c．．．Cls信號
圖5
1．．．未處理
2．．．在200℃處理
3．．．在250℃處理
a．．．Hf4f信號
b．．．Nls信號
c．．．Cls信號
圖6
1．．．導體-金或鋁
2．．．介電體-氧化鋯
3．．．導體-金或鋁
4．．．基板/絕緣體-玻璃
圖8a
1．．．導體(汲極及源極)
2．．．半導體
3．．．介電體
4．．．導體(閘極)
圖8b
1．．．半導體
2．．．導體(汲極及源極)
3．．．介電體
4．．．導體(閘極)
圖1：顯示羥化[2-(甲氧基亞胺基)丙酸]鉿於甲氧基乙醇中之溶液之前驅物含量對動態黏度之相關性。該測量係在標準環境條件(DIN 50 014-23)下進行。
圖2：顯示羥化[2-(甲氧基亞胺基)丙酸]鋯及羥基[2-(甲氧基亞胺基)丙酸]鉿於氧氣中之熱重量分析(1=鋯錯合物之曲綫，2=鉿錯合物之曲綫)。以時間為函數之相對質量減少可總結出所需反應溫度。
圖3：顯示本發明薄膜之藉X-射線光子光譜學(XPS)分析，該薄膜係包括藉由於基板上旋塗含於2-甲氧基乙醇/2-丁醇中之肟酸鋯以及於各情況下在不同溫度下處理30分鐘而形成(a=Zr3d信號，b=Nls信號，c=C1s信號，1=未進一步處理，2=在200℃處理，3=在250℃處理)。
該XPS光譜可歸納出存在於樣品中之元素及氧化狀態以及混合比率。因此可顯示在處理後之膜中存在氧化鋯。
圖4：顯示本發明薄膜之藉由X-射線光子光譜學(XPS)分析，該薄膜之製備係包括藉由於基板上旋塗含肟酸鎂於2-甲氧基乙醇中之溶液，且於各情況下在不同的溫度下處理30分鐘。
在某些測量中，該表面藉由濺射法在測量室中進行清潔。
(a=Mgls信號，b=Ols信號，c=C1s信號，1=在210℃處理+濺射法，2=在450℃處理，3=在450℃處理+濺射法)
該XPS光譜可歸納出存在於樣品中之元素及氧化狀態以及混合比率。因此可顯示在處理之後，薄膜中存在氧化鎂。
圖5：顯示本發明薄膜之藉由X-射線光子光譜學(XPS)分析，該薄膜之製備包括藉由於基板上旋塗含肟酸鉿於2-甲氧基乙醇/2-丁醇中之溶液，及於各情況下在不同的溫度下處理30分鐘。
(a=Hf4f信號，b=Nls信號，c=C1s信號，1=未處理，2=在200℃處理，3=在250℃處理。)
該XPS光譜可歸納出存在於樣品中之元素及氧化狀態以及混合比率。因此可顯示在處理後，薄膜中存在氧化鉿。
圖6：顯示根據本發明介電層之結構圖解代表圖。(1=導體-金或鋁，2=介電體-氧化鋯，3=導體-金或鋁，4=基板/絕緣體-玻璃)
圖7：顯示用以測定圖6之組件中之崩潰電壓之電流/電壓曲綫。
該電流/電壓曲綫顯示對於介電體之典型狀態；由該曲綫可決定崩潰電壓作為材料之重要參數。
圖8a：顯示薄膜場效應電晶體結構之圖解代表圖(1=導體(汲極及源極)，2=半導體，3=介電體，4=導體(閘極))。
該組件具有在上觸點配置之電極。
圖8b：顯示薄膜場效應電晶體結構之圖解代表圖(1=半導體，2=導體(汲極及源極)，3=介電體，4=導體(閘極))。
該組件具有以底接觸配置之電極。
(無元件符號說明)

Claims (17)

  1. 一種用於塗覆電子組件之前驅物，其特徵為：該前驅物包含有機金屬鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫錯合物或其混合物，其含有至少一個來自肟酸鹽類之配位體。
  2. 如請求項1之前驅物，其特徵為：該配位體係2-(甲氧基亞胺基)烷酸鹽、2-(乙氧基亞胺基)烷酸鹽或2-(羥基亞胺基)烷酸鹽。
  3. 如請求項1或2之前驅物，其特徵為：該前驅物係可印刷且以印刷墨水或印刷膏糊之形式用於印刷場效應電晶體(FET)中。
  4. 一種印刷電子組件，其具有以下薄層：一固體或可撓性導電基板或一具有導電層(閘極)之絕緣性基板；一包括可自如請求項1至3中任一項之相應前驅物獲得之鋁、鎵、釹、鎂、鉿或鋯氧化物之絕緣體；至少一電極(汲極電極)；一半導體。
  5. 一種印刷電子組件，其具有以下薄層：一固體或可撓性導電基板或一具有導電層(閘極)之絕緣性基板，該導電層包括一可自如請求項1至3中任一項之相應前驅物獲得之銦錫氧化物(ITO)；一絕緣體；至少一電極(汲極電極)； 一半導體。
  6. 一種印刷電子組件，其具有以下薄層：一固體或可撓性導電基板或一具有導電層(閘極)之絕緣性基板；一絕緣體；至少一電極(汲極電極)；一半導體，其包括可自如請求項1至3中任一項之相應前驅物獲得之氧化銦鎵鋅(IGZO)或氧化鋅錫(ZTO)。
  7. 如請求項4至6中任一項之印刷電子組件，其特徵為：該基板為玻璃、陶瓷、金屬或塑料之固體基板。
  8. 如請求項4至6中任一項之印刷電子組件，其特徵為：該基板為可撓性塑料薄膜或金屬箔。
  9. 一種製備如請求項1至3中任一項之前驅物之方法，其特徵為：使至少一種氧代羧酸與至少一種羥胺或烷基羥胺在鹼存在下反應，以及隨後添加無機鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫鹽或其混合物。
  10. 如請求項9之方法，其特徵為：該所用之氧代羧酸係氧代乙酸、氧代丙酸或氧代丁酸。
  11. 一種用於製造具有鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫之氧化物層或表面或其混合物之電子結構之方法，其特徵為：a.藉由浸塗、旋塗或噴墨印刷或軟版/凹版印刷將如請求項1至3中任一項之包括有機金屬鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫錯合物或其混合物之前驅物溶 液以相應於欲達成之電子結構之一或多個層塗佈於基板上，b.在空氣或氧氣氣氛中加熱或乾燥該經塗佈之前驅物層，以形成鋁、鎵、釹、釕、鎂、鉿、鋯、銦及/或錫之氧化物層或表面或其混合物，c.最終，藉由絕緣層將該經塗佈之電子結構密封且配備觸點並最終完成。
  12. 如請求項11之方法，其特徵為：該加熱期間之溫度係T80℃。
  13. 如請求項11之方法，其特徵為：該加熱或乾燥係藉由經波長為<400nm之UV光輻射而進行。
  14. 如請求項11至13中任一項之方法，其特徵為：該氧化鋁、氧化鎵、氧化釹、氧化釕、氧化鎂、氧化鉿或氧化鋯層在兩導體之間具有>0.1MV/cm的崩潰電壓。
  15. 如請求項11至13中任一項之方法，其特徵為：該銦錫氧化物層(ITO層)具有藉由四點測量法測定之<10-3 ohm．cm之比電阻。
  16. 如請求項11至13中任一項之方法，其特徵為：該氧化銦鎵鋅(IGZO)層或氧化鋅錫(ZTO)層具有>10-3 cm2 /Vs的電荷載子遷移率。
  17. 一種如請求項1至3中任一項之前驅物於製造場效應電晶體中之一或多個功能層之用途。
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