JP5599797B2 - 変性された粒子、及びこれらを含む分散液 - Google Patents

変性された粒子、及びこれらを含む分散液 Download PDF

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JP5599797B2
JP5599797B2 JP2011525509A JP2011525509A JP5599797B2 JP 5599797 B2 JP5599797 B2 JP 5599797B2 JP 2011525509 A JP2011525509 A JP 2011525509A JP 2011525509 A JP2011525509 A JP 2011525509A JP 5599797 B2 JP5599797 B2 JP 5599797B2
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particles
dispersion
metal
zno
substrate
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JP2012501941A (ja
JP2012501941A5 (cg-RX-API-DMAC7.html
Inventor
ドムケ，イムメ
カルポフ，アンドレイ
ヒプスト，ハルトムート
パラシュコフ，ラドスラフ
ヘニッヒ，インゴルフ
カストラー，マルセル
フライシュハカー，フリーデリーケ
ヴェーバー，ロタル
エッケルレ，ペーター
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/04—Compounds of zinc
    • C09C1/043—Zinc oxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
    • Y10T428/2995—Silane, siloxane or silicone coating

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
JP2011525509A 2008-09-04 2009-08-28 変性された粒子、及びこれらを含む分散液 Expired - Fee Related JP5599797B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08163703 2008-09-04
EP08163703.5 2008-09-04
PCT/EP2009/061103 WO2010026102A1 (de) 2008-09-04 2009-08-28 Modifizierte partikel und diese enthaltende dispersionen

Publications (3)

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JP2012501941A JP2012501941A (ja) 2012-01-26
JP2012501941A5 JP2012501941A5 (cg-RX-API-DMAC7.html) 2012-10-11
JP5599797B2 true JP5599797B2 (ja) 2014-10-01

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US (1) US8734899B2 (cg-RX-API-DMAC7.html)
EP (1) EP2321373A1 (cg-RX-API-DMAC7.html)
JP (1) JP5599797B2 (cg-RX-API-DMAC7.html)
KR (1) KR20110066162A (cg-RX-API-DMAC7.html)
CN (1) CN102144004B (cg-RX-API-DMAC7.html)
TW (1) TWI488815B (cg-RX-API-DMAC7.html)
WO (1) WO2010026102A1 (cg-RX-API-DMAC7.html)

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EP2376230B1 (de) 2008-12-11 2014-07-30 Basf Se Anreicherung von werterzen aus minenabfall (tailings)
WO2010066768A2 (de) * 2008-12-12 2010-06-17 Basf Se Dispersionen enthaltend funktionalisierte oxidische nanopartikel
PE20120730A1 (es) 2009-03-04 2012-06-15 Basf Se Separacion magnetica de minerales metalicos no ferrosos por acondicionamiento en multiples etapas
CN102612406A (zh) * 2009-11-20 2012-07-25 巴斯夫欧洲公司 用于制备羧酸和/或羧酸酐的在至少一个催化剂层中具有锑酸钒的多层催化剂及具有低热点温度的制备邻苯二甲酸酐的方法
KR20120123343A (ko) 2009-12-18 2012-11-08 바스프 에스이 저온에서 용액으로부터 가공될 수 있는 유전체를 갖는 기계적 가요성 중합체 기판 상의 금속 산화물 전계 효과 트랜지스터
US20110230668A1 (en) * 2010-03-19 2011-09-22 Basf Se Catalyst for gas phase oxidations based on low-sulfur and low-calcium titanium dioxide
TW201206896A (en) 2010-04-13 2012-02-16 Basf Se Process for controlling a gas phase oxidation reactor for preparation of phthalic anhydride
KR20180100248A (ko) 2010-04-23 2018-09-07 픽셀리전트 테크놀로지스 엘엘씨 나노결정의 합성, 캐핑 및 분산
KR20130057439A (ko) 2010-04-28 2013-05-31 바스프 에스이 아연 착물 용액의 제조 방법
US8865000B2 (en) 2010-06-11 2014-10-21 Basf Se Utilization of the naturally occurring magnetic constituents of ores
US8859459B2 (en) 2010-06-30 2014-10-14 Basf Se Multilayer catalyst for preparing phthalic anhydride and process for preparing phthalic anhydride
US9212157B2 (en) 2010-07-30 2015-12-15 Basf Se Catalyst for the oxidation of o-xylene and/or naphthalene to phthalic anhydride
US9376457B2 (en) 2010-09-03 2016-06-28 Basf Se Hydrophobic, functionalized particles
JP2014503446A (ja) 2010-10-27 2014-02-13 ピクセリジェント・テクノロジーズ，エルエルシー ナノ結晶の合成、キャップ形成および分散
US9359689B2 (en) 2011-10-26 2016-06-07 Pixelligent Technologies, Llc Synthesis, capping and dispersion of nanocrystals
KR101978835B1 (ko) * 2012-03-16 2019-05-15 한국전자통신연구원 박막 트랜지스터
JP6108563B2 (ja) * 2013-02-04 2017-04-05 国立研究開発法人産業技術総合研究所 抵抗体、誘電体等の電子部品用無機材料ペースト及び該無機材料ペーストの製造方法
FI130559B (en) * 2021-06-23 2023-11-21 Turun Yliopisto Semiconductor structure, semiconductor device, and method
KR102756449B1 (ko) * 2022-02-11 2025-01-21 한인정밀화학(주) 양자점 조성물, 이로부터 형성된 경화 패턴, 및 이를 포함하는 디스플레이 장치
CN118039856A (zh) * 2024-02-19 2024-05-14 贵州大学 锂电池用包覆及掺杂改性的高镍正极材料和低温电解液

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Publication number Publication date
US20110163278A1 (en) 2011-07-07
TW201016614A (en) 2010-05-01
CN102144004B (zh) 2014-11-26
EP2321373A1 (de) 2011-05-18
US8734899B2 (en) 2014-05-27
JP2012501941A (ja) 2012-01-26
KR20110066162A (ko) 2011-06-16
WO2010026102A1 (de) 2010-03-11
TWI488815B (zh) 2015-06-21
CN102144004A (zh) 2011-08-03

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