TWI466170B - 用於光阻劑剝離室之鋁裸板 - Google Patents

用於光阻劑剝離室之鋁裸板 Download PDF

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TWI466170B
TWI466170B TW094120703A TW94120703A TWI466170B TW I466170 B TWI466170 B TW I466170B TW 094120703 A TW094120703 A TW 094120703A TW 94120703 A TW94120703 A TW 94120703A TW I466170 B TWI466170 B TW I466170B
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bare aluminum
photoresist stripping
bare
aluminum plate
alumina
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Fred D Egley
Michael Kang
Anthony L Chen
Jack Kuo
Hong Shih
Duane Outka
Bruno Morel
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Lam Res Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

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Description

用於光阻劑剝離室之鋁裸板
本發明係有關一種適應於一電漿加工裝置之裸鋁板。
半導體基板材料，例如矽晶圓，其係藉由以下技術加工，包括沉積製程，諸如金屬、介電質及半導體材料之化學氣相沉積(CVD)或電漿增強性化學氣相沉積(PECVD)；蝕刻製程；及光阻劑剝離製程。
半導體積體電路(IC)製程包括將多數個裝置形成於基板上。傳導性及絕緣性材料層沉積於基板上。光阻劑可施加於該層堆疊上而被使用作為一遮蔽層，且經圖案化以保護不想要蝕刻之下層材料部分。蝕刻製程完成後，光阻劑即藉由一剝離技術以自該結構去除，例如使用有機剝離器、氧化型剝離器、或藉由電漿蝕刻之乾式剝離。
本發明提供一種裸鋁板，其適用於一電漿加工裝置之光阻劑剝離室，該裝置包括一遠端電漿源，以將反應物供給至該光阻劑剝離室內。該板之一較佳實施例係構形為由該光阻劑剝離室之一側壁支撐，且該板之一多孔性表面係面向一欲在該室內加工之半導體基板。該板之多孔性表面包括多數個用於施配該反應物之氣體通道。
該裸鋁板包括一外氧化鋁層，其形成該板之一外表面。該外層較佳具有一大約50至300埃厚度，及較佳具有一至少為大約90%氧化鋁理論密度之密度。該外氧化鋁層可為一天然氧化鋁層，或其可以藉由將一新或舊裸鋁板化學處理而形成。
一種光阻劑剝離裝置之一較佳實施例包含一光阻劑剝離室；一遠端電漿源，其可操作以產生一電漿及將反應物導送入該光阻劑剝離室；及一裸鋁板，其係由該光阻劑剝離室之一側壁支撐。該遠端電漿源較佳為包括一微波產生器，其放射微波以將一製程氣體激發成電漿狀態。
提供一種在一光阻劑剝離室內從一基板剝離光阻劑之方法之一較佳實施例，該方法包含：遠從該光阻劑剝離室將一製程氣體激發成電漿狀態，及將反應物供給至該光阻劑剝離室內，其中一包括一光阻劑在內之半導體基板被支撐在一基板支撐件上。該光阻劑剝離室包括一側壁及一裸鋁板，該裸鋁板形成一頂壁且係由該側壁支撐。該反應物係通過該板內之氣體通道而被施配至該室內，以將該光阻劑從該基板去除。
提供一種處理一適用於一光阻劑剝離室之裸鋁板的方法之一較佳實施例，該方法包含：以一化學溶液處理一具有一第一外氧化鋁層之裸鋁板，該化學溶液可以從該板有效去除汙染物及該第一外氧化鋁層，以曝露出鋁材；及將一第二外氧化鋁層形成於該鋁材上。該第二外氧化鋁層具有一大約50至300埃厚度及一至少為大約90%氧化鋁理論密度之密度。
用於半導體基板諸如矽晶圓者之電漿處理裝置包括光阻劑剝離室，其被用在半導體裝置之製造過程中，以將光阻劑(或"光阻材料")去除，該光阻劑係作為一用於半導體結構之遮罩。例如，該光阻劑係在一或多層已被蝕刻而在其內部形成圖形後才從下層去除。一項在光阻劑剝離室內執行以利於自半導體結構去除光阻劑之技術為乾剝離，亦稱為"灰化"，其使用電漿乾蝕刻技術。
在一光阻劑剝離操作期間，反應物被分布在一包括有一光阻劑層在內之基板上方，其係在光阻劑剝離室內進行處理。經發現包括陽極化鋁與陶瓷在內之材料擋板有其特定之缺點，陶瓷係如石英、碳化矽及藍寶石。陽極化鋁擋板包括一外氧化物塗層，係由鋁材料在一電解液中之陽極氧化所形成。惟，由陽極化過程所形成之陽極化層包括一內層及一外層，其可能呈不必要之多孔性、低密度及包括瑕疵。再者，陽極化層厚，其典型上具有一大約5,000至10,000埃厚度。
吾人亦發現陶瓷擋板有低熱傳導率，致使其在半導體基板處理期間易遭受熱震失效，亦使其在光阻劑剝離期間有不良之空間溫度均一性，減低了光阻劑從基板去除之均一性。陶瓷擋板亦容易脆裂，且因而，甚至會在例行之清潔與處理操作期間斷裂。再者，石英擋板為消耗性組件，亦即其在光阻劑剝離室內之性能會隨著連續性使用而退化。
有鑑於在光阻劑剝離室內使用陽極化鋁與陶瓷材料擋板之上述相關缺點，因此已作進一步研究以發展出供使用於光阻劑剝離室內之不同材料擋板。由於諸此研究，竟意外地確定"裸鋁"擋板可用於光阻劑剝離室內，且無陽極化鋁與陶瓷材料擋板之上述缺點。如本文所述，"裸鋁"一詞係指一具有"天然"外氧化物層之鋁或鋁合金材料，或是此一鋁或鋁合金材料具有一由本文內所述之方法實施例形成之薄外氧化鋁層。如本文所述，一"薄"外氧化鋁層較佳具有一大約50埃至300埃厚度，最佳為大約50埃至100埃。當在常溫下曝露於一含氧之環境時，天然氧化鋁層會自然形成於鋁材料上。本文所用之"裸鋁"一詞並不包括含有一陽極化氧化鋁層之陽極化鋁材料。
圖1說明一光阻劑剝離室10之示範性實施例，裸鋁板50之一較佳實施例係安裝於其內。光阻劑剝離室10包括一側壁12、一底壁14及一頂蓋16。光阻劑剝離室10之壁12、14及頂蓋16可為任意適當之材料，例如陽極化鋁、或裸鋁。頂蓋16較佳為藉由鉸鏈而樞接於側壁12，以供頂蓋16開啟而通達光阻劑剝離室10內部，可將裸鋁板50去除以便清潔或更換，或為了其他目的。光阻劑剝離室10包括設於底壁14內之真空孔18。
光阻劑剝離室10亦包括一基板支撐件20，可在光阻劑剝離期間供一半導體基板22安裝於其上，例如一晶圓。基板22包括一光阻劑，其係在光阻劑剝離過程期間提供一遮蔽層，以保護基板22之下層。該等下層可為傳導性、絕緣性及/或半導體性材料。基板支撐件20較佳為包含一適用於夾持基板22之靜電式夾頭。基板支撐件20較佳為包括一加熱器，例如一電阻式加熱元件，其適用於在光阻劑剝離過程期間將基板22維持於一適當溫度，較佳為大約200℃至300℃，最佳為大約250℃至300℃。基板22可以通過一提供於側壁12內之基板進入孔26而送入與移離光阻劑剝離室10。例如，基板22可以在真空下從一鄰近於該光阻劑剝離室之蝕刻室轉移至光阻劑剝離室10內部。
在該實施例中，一遠端之電漿源30係經配置以供流體流通於光阻劑剝離室10。電漿源30可在操作上產生電漿，及通過一連接於光阻劑剝離室10之通道32而供給反應物至光阻劑剝離室10內部。該反應物將該光阻劑從被支撐於基板支撐件20上之基板22去除。電漿源30之所示實施例包括一遠端之能源34及一剝離氣體源36。能源34可為任意適當之源，且較佳為一微波產生器。包括一微波產生器在內之示範性裝置可取自加州弗利蒙市之Lam Research公司。在一較佳實施例中，微波產生器係以2.45 GHz頻率操作，且較佳為具有一在大約500至1500瓦範圍內之功率，最佳為大約1000至1500瓦範圍。以箭頭38表示之微波係由微波產生器34產生，且傳送通過一波導40而進入通道32。
氣體源36可在操作上將箭頭42所示之製程氣體供給至通道32內，該氣體在此處被能源34所產生之微波激勵成電漿狀態。反應物通過一開孔44而進入光阻劑剝離室10內部。
在反應物流至基板22上且將光阻劑剝離之前，反應物係由一設置於頂蓋16與基板支撐件20之間之裸鋁板50施配於光阻劑剝離室10內。在光阻劑剝離期間，基板22較佳由一設置於基板支撐件20內之加熱器加熱。光阻劑剝離期間所產生之廢棄物則透過排放孔18以泵出光阻劑剝離室10外。
如圖2所示，裸鋁板50較佳為一圓形、單體式裸鋁。光阻劑剝離室10較佳呈圓筒狀，以利單一晶圓處理。當被裝設在一圓筒狀之光阻劑剝離室10內時，裸鋁板50較佳具有一大於光阻劑剝離室10內部寬度之直徑，該寬度例如為直徑，以致使該擋板可以由側壁12支撐。裸鋁板50包括一備有一突出中央部分52之內部，該中央部分設有一上表面54及貫穿之通道56。在裸鋁板50之揭示實施例中，中央部分52包括6個沿周側間隔之通道56。在其他實施例中，通道56之數量可以較多或較少於6個。在本實施例中，通過通道32之紫外線(UV)輻射係在一大致垂直於該上表面之方向中撞擊於上表面54。通道56較佳為相對於上表面54而以一銳角定向，以防止UV輻射之直接視線通過裸鋁板50。因此，UV輻射係自上表面54與通道56壁面反射，使其不致於損傷基板22。
裸鋁板50亦包括配置於中央部分52與一周邊部分60間之貫穿通道58。通道58係適應於依一要求流動模式將反應物施配至光阻劑剝離室10內部。如圖2所示，通道58較佳為同中心配置之孔列形式。通道58較佳具有一圓形截面，且較佳為沿裸鋁板50之放射方向朝外之方向中從中央部分52增大截面尺寸(例如直徑)至周邊部分60。
如圖2所示，裸鋁板50之周邊部分60包括一凸緣62，其具有沿周側間隔之孔64，用於容納固接件66，例如螺栓(圖1)，以將裸鋁板50接附於光阻劑剝離室10之側壁12之頂表面68。裸鋁板50可以自側壁12卸離及自光阻劑剝離室10去除，以利於必要時處理或更換該裸鋁板。
裸鋁板50係鋁或一鋁合金，例如6061鋁，其包含大約96至99重量百分比之鋁、大約0.8至1.2%之鎂、大約0.4至0.8%之矽、銅、鉻，及選項性之鐵、錳、鋅及/或鈦。
一內襯70係適應於被支撐在裸鋁板50之上表面72上，以利於在光阻劑剝離過程期間將沉積於頂蓋16之底表面上之材料最少化。周側間隔物65係提供於上表面72上，以支撐內襯70及在其間形成一空間74(如圖1)。間隔物65可為任意適當之材料，且較佳為"鐵弗龍"。內襯70包括一中央定位之通道44，供反應物從通道32通過此處而進入空間74。內襯70較佳由裸鋁構成，例如6061鋁。
裸鋁板50可為一未曾用於一光阻劑剝離室內之"新"擋板且包括一天然之氧化鋁外層，或是一"舊"擋板，亦即一在先前已用於一光阻劑剝離室內，且包括一天然之氧化鋁外層或一由本文內所述方法實施例形成之薄氧化鋁外層。此"新"及"舊"裸鋁板皆可利用本文內所述之方法處理，以產生一薄氧化鋁外層。易言之，"舊"裸鋁板可以藉由實施本文內所述之方法而復原。包括一薄氧化鋁外層在內之"復原"裸鋁板可以重新裝設於光阻劑剝離室內，及重新用於光阻劑剝離處理。
如上所述，包括一天然氧化鋁外層在內之新裸鋁板可以用於光阻劑剝離室內。天然氧化鋁外層較佳具有一大約25至75埃厚度。在新裸鋁板裝設於一光阻劑剝離室內之前，其較佳經過處理以將擋板製造上所生成之殘留汙染物去除，例如潤滑油。
根據該等裸鋁板之另一較佳實施例，包括一天然氧化鋁外層在內之新裸鋁板可以藉由將天然氧化鋁外層去除處理，因而僅留下以鋁為主之材料；及隨後在鋁材料之曝露表面上形成一薄氧化鋁外層。若經確定其具有不足以使用在一光阻劑剝離室內之性質，例如天然氧化鋁外層具有一不足之密度、厚度及/或均一性，則天然氧化鋁外層即被去除。將天然氧化鋁外層去除後所形成之氧化鋁外層較佳為一單層；較佳具有一大約50至300埃厚度，最佳為大約50至100埃；及較佳具有一至少為大約90%氧化鋁理論密度之密度，最佳為至少大約95%。據此，薄氧化鋁層具有比陽極化之氧化鋁層者小的孔隙度。同樣地，厚陽極化之氧化鋁層可能包括不想要之金屬間夾雜物，例如矽化鎂或矽化鎂鐵，此將降低其品質。
根據該等裸鋁板之另一較佳實施例，包括一天然氧化鋁外層在內之舊裸鋁板可以藉由一處理過程復原，該處理過程包括從擋板去除表面汙染物及天然氧化鋁外層，藉此僅留下以鋁為主之材料；及隨後在以鋁為主之材料之曝露表面上形成一薄氧化鋁外層。該氧化鋁外層較佳為一單層；較佳具有一大約50至300埃厚度，最佳為大約50至100埃；及較佳具有一至少為大約90%氧化鋁理論密度之密度，最佳為至少大約95%。
根據另一較佳實施例，包括一由本文內所述方法實施例形成之薄氧化鋁外層在內之舊裸鋁板可以經過處理以將氧化鋁外層上之汙染物去除且將氧化鋁外層本身亦去除，隨後在生成之以鋁為主之材料上形成一新的氧化鋁外層。必要時可以執行此處理，以容許該額外處理之裸鋁板在一光阻劑剝離室內重複使用。例如，該處理可以在確定出現光阻劑剝離率降低、通過晶圓之剝離不均一性、及/或在容置有裸鋁板之光阻劑剝離室內處理之基板上發生顆粒沉積時執行。該處理可以執行一或多次，亦即該等裸鋁板可以至少復原一次。
在另一較佳實施例中，該包含如所成之氧化鋁層之裸鋁板可經後處理以便從氧化鋁層移除微污染物、顆粒及瑕疵。
根據一較佳實施例，新及舊裸鋁板皆可利用一化學處理過程處理，該過程包括從新或舊裸鋁板去除表面汙染物及天然氧化鋁層、或從舊裸鋁板去除一先前形成之薄氧化鋁層及汙染物。該氧化鋁層被去除後，一薄氧化鋁層即形成於以鋁為主之材料上。依據包括光阻劑成分、基板之諸層成分、及用於將光阻劑自基板去除之製程氣體混合物在內之多項因素，沉積於裸鋁板之曝露表面上之汙染物可包括例如碳、鈦、四氟化鈦及三氟化鋁。該化學處理過程包含以下步驟：將表面汙染物及天然或先前形成之薄氧化鋁層去除，以曝露出以鋁為主之材料，及隨後在該以鋁為主之材料上形成一薄氧化鋁層。該化學處理過程較佳為亦包括以下步驟：將氧化鋁層去除後，將該以鋁為主之材料表面重新光製，及處理該裸鋁板之重新光製表面，以在形成薄氧化鋁層之前將汙染物去除。
根據該化學處理過程之一較佳實施例，一新或舊裸鋁板係經初期清潔以去除沉積物。此沉積物可包括從基板剝離之光阻材料之有機物質，以及其他物質，例如碳、鈦、四氟化鈦及三氟化鋁。該清潔較佳為包括先使用一適當之鹼性清潔液，例如可取用密西根州麥迪遜黑茨市Henkel Surface Technologies公司之Nova 120溶液。此溶液為一含有四溴酸鈉與專用衍生物之非矽酸鹽、鹼性清潔液。該裸鋁板較佳為浸泡在大約110℉至130℉溫度之該溶液內大約5至15分鐘，接著用水清洗該裸鋁板大約3至5分鐘，以將其溶液清除。
在該實施例中，該裸鋁板外表面較佳為隨後用一適當之鹼性蝕刻液蝕刻，例如取自Henkel Surface Technologies公司之Nova SC603B溶液。此溶液為一主要含有氫氧化鈉與專用衍生物之鹼性清潔液。該裸鋁板較佳為浸在大約110℉至130℉溫度之該溶液內大約30秒至2分鐘，接著用充分時間以水清洗該裸鋁板，以將溶液自該裸鋁板清除，典型上為大約5至10分鐘。清洗水較佳為超純水，其在大約周圍溫度下具有一至少15 Mohm－cm電阻係數。
在該實施例中，該裸鋁板外表面隨後使用一適當之溶液氧化，例如取自Henkel Surface Technologies公司之Nova 310A&B溶液。該裸鋁板較佳浸在該溶液內達到一充分時間以利自該裸鋁板去除外氧化鋁層，典型上為大約5至10分鐘。該溶液較佳為大約周圍溫度。該裸鋁板隨後被清洗，較佳使用超純水，且達到一充分時間以利去除該溶液，典型上為大約5至10分鐘。清洗後之裸鋁板例如使用乾淨之乾燥空氣或過濾之氮氣予以乾燥。
將該氧化鋁層去除後，該裸鋁板較佳被重新光製，以形成一可用在光阻劑剝離室內之要求表面粗度。例如，該重新光製表面粗度可為大約15至20微吋。該裸鋁板可以使用任意適當之研磨劑而重新光製，例如包括一氧化鋁研磨劑在內之研磨紙，例如一220砂粒之研磨紙。或者，較粗或較細之研磨紙亦可使用，其取決於該裸鋁板之要求表面精度。該裸鋁板可以在重新光製期間旋轉，以增進表面精度之均一性。該重新光製後之裸鋁板隨後被清洗，較佳使用超純水，且達到一充分時間以利將鬆釋之粒子自該裸鋁板表面去除，典型上為大約5至10分鐘。清洗後之裸鋁板例如使用乾淨之乾燥空氣或過濾之氮氣予以乾燥。
在該實施例中，重新光製後殘留在該裸鋁板上之汙染物即被去除；其較佳為先使用一適當之鹼性清潔液，例如Nova 120。該裸鋁板較佳為浸泡在大約110℉至130℉溫度之該溶液內大約5至15分鐘。該裸鋁板隨後被清洗，較佳使用超純水大約3至10分鐘，以將殘留之鹼性清潔液自該裸鋁板清除。
在鹼性液清潔步驟後，該裸鋁板係用一酸性清潔液清潔，以利在該裸鋁板上形成一氧化鋁層，其在此步驟完成後將繼續在空氣中生長。任意適當之酸性清潔液皆可使用。一較佳之酸性清潔液含有一大約0.25%磷酸與大約0.05%氫氟酸之混合物。該裸鋁板較佳為浸泡在一大約周圍溫度之酸性清潔液內大約1至3分鐘。該裸鋁板隨後被清洗，較佳使用超純水大約3至10分鐘，以將殘留之酸性清潔液自該裸鋁板清除。
在該實施例中，該裸鋁板較佳為隨後在一適當之乾淨環境中在超純水內以超音波清洗，較佳為一等級1000之乾淨室。水較佳為大約周圍溫度。在超音波清洗後，該裸鋁板較佳使用超純水清洗，且隨後例如使用乾淨之乾燥空氣或過濾之氮氣予以乾燥。
在另一較佳實施例中，新及/或舊裸鋁板皆可利用一過程處理，該過程包括去除表面汙染物及一天然外氧化鋁層或一先前形成之薄外氧化鋁層，及藉由一電拋光過程將一薄外氧化鋁層形成於該裸鋁板上。在該實施例中，汙染物及外氧化鋁層可以藉由上述步驟去除。
外氧化鋁層從該裸鋁板去除而將以鋁為主之材料曝露後，藉由將該裸鋁板放置於一含有適當酸性溶液之電拋光槽內，且較佳為至少含有磷酸，該裸鋁板即被電拋光。電拋光條件可經選擇，以產生一要求厚度，較佳為大約50至100埃。該氧化鋁層較佳具有一至少為大約90%氧化鋁理論密度之密度，最佳為至少大約95%。典型上，電拋光可以進行大約30秒至5分鐘，以產生一要求厚度之氧化鋁層。
在該實施例中，具有一外氧化鋁層之該裸鋁板較佳以去離子水清洗，及在一適當之乾淨環境中在超純水內以超音波清洗，較佳為一等級10,000或1000之乾淨室。該裸鋁板隨後使用氮氣或超純空氣予以乾燥。
由上述方法實施例形成之具有一天然氧化鋁外層或一薄氧化鋁外層的該裸鋁板即可用於光阻劑剝離室內，而不會造成基板如半導體基板者之金屬汙染、降低之光阻劑剝離率、或降低之光阻劑剝離均一性。該裸鋁板可以藉由蝕刻製程氣體以抗氧化及/或腐蝕，其包括氟化氣體。
相較於陶瓷材料與陽極化鋁之裸鋁板，該裸鋁板可以提供特定優點。特別是，該裸鋁板具有比陶瓷裸鋁板者高之熱傳導率，其可消除熱震問題及在裸鋁板內提供較佳之溫度均一性，依次可改善基板上之光阻劑剝離均一性。鋁亦比高純度之陶瓷材料低廉。相較於陽極化之鋁板，該裸鋁板具有一外氧化鋁層，其係一單層且比此陽極化鋁板之該等陽極化層薄及較高密度。
可以在光阻劑剝離室10內加工之一基板22之示範性實施例被揭示於圖4中。基板22係說明金屬蝕刻已完成後，但是在光阻劑剝離之前。在其他實施例中，其他層可以提供於所示諸層之上方、下方或其間。再者，並非圖4中之所有層皆需存在，某些或所有層可由其他不同層替代。
基板22包括一底基板102，其典型上為矽。一氧化物層104，例如二氧化矽，係形成於基板102上。一或多個障壁層106，例如鈦、氮化鈦、鎢化鈦或類此者，其可以形成於氧化物層104與一上方金屬層108之間。
金屬層108可以包含例如鎢、鋁或一鋁合金，諸如鋁－銅、鋁－矽、或鋁－銅－矽。基板22亦可包括一任意適當材料之抗反射塗料(ARC)層110，例如氮化鈦或鎢化鈦。一圖案化之光阻劑層112被提供於ARC層110上方。加工副產物120則揭示於該等壁面上。
用於形成遠端電漿之製程氣體包括氧，其被激發成一電漿狀態，使O2 解離成氧基與離子物，二者皆流入光阻劑剝離室10內部，且與基板22上之光阻劑層112反應(即氧化或"灰化")。光阻材料被剝離過程去除之速率稱為"剝離率"。該製程氣體可以有任意適當之成分，例如一含氧之氣體混合物，諸如O2 /N2 、O2 /H2 O、O2 /N2 /CF4 、或O2 /N2 /H2 O等氣體混合物。該氣體混合物較佳包含O2 、N2 、及一含氟之成分，例如CF4 或C2 F6 。N2 可被添入該氣體混合物內，以利相關於光阻材料而比較一第二材料例如一障蔽物及/或下方材料者更增進選擇性。本文所用相關於光阻材料而比較一第二材料者之"選擇性"一詞係指定義為光阻材料蝕刻率對第二材料蝕刻率之比。
以總氣體體積為例，較佳之氣體混合物可以含有大約40%至99%，理想為大約60%至95%，及最佳為大約70%至90%O2 ；大約0.5%至30%，理想為大約2.5%至20%，及最佳為大約5%至15%含氟氣體；及大約0.5%至30%，理想為大約2.5%至20%，及最佳為大約5%至15%N2 。在光阻劑剝離期間，該製程氣體之總流動率較佳在大約500至6000 sccm範圍內，理想在大約2000至5000 sccm，且光阻劑剝離室10內之壓力較佳在大約200毫托至10托範圍內。
本發明已參考較佳實施例說明於前。惟，習於此技者可以瞭解的是在不脫離本發明範疇下，仍可用上述者以外之特定形式具體實施本發明。較佳實施例係闡釋性，不應被視為侷限性，本發明之範疇係由文後之請求項所定，而非前述說明，且在請求項範圍內之諸此變化與等效技術皆應被包括在本發明範疇內。
10．．．光阻劑剝離室
12．．．側壁
14．．．頂蓋
18．．．真空孔
20．．．基板支撐件
22．．．半導體基板
26．．．基板進入孔
30．．．電漿源
32、56、58．．．通道
34．．．能源/微波產生器
36．．．剝離氣體源
38．．．微波
40．．．波導
42．．．製程氣體
44．．．開孔
50．．．鋁裸板
52．．．中央部分
54、72．．．上表面
60．．．周邊部分
62．．．凸緣
64．．．周側間隔孔
65．．．周側間隔物
66．．．固接件
68．．．頂表面
70．．．內襯
74．．．空間
102．．．底基板
104．．．氧化物層
106．．．障壁層
108．．．金屬層
110．．．抗反射塗料層
112．．．光阻層
120．．．加工副產物
圖1說明一包括一裸鋁板較佳實施例在內之光阻劑剝離室之實施例。
圖2說明裸鋁板之一較佳實施例。
圖3說明一定位於圖2所示裸鋁板上之內襯。
圖4說明一可在圖1所示光阻劑剝離室內加工之基板之實施例。
10．．．光阻劑剝離室
12．．．側壁
14．．．底壁
16．．．頂蓋
18．．．真空孔
20．．．基板支撐件
22．．．半導體基板
26．．．基板進入孔
30．．．電漿源
32、58．．．通道
34．．．能源/微波產生器
36．．．剝離氣體源
38．．．微波
40．．．波導
42．．．製程氣體
44．．．開孔
50．．．鋁裸板
52．．．中央部分
62．．．凸緣
66．．．固接件
68．．．頂表面
70．．．內襯
74．．．空間

Claims (20)

  1. 一種適應於一電漿加工裝置之裸鋁板，該裝置包含一光阻劑剝離室及一可在操作上將反應物供給至該光阻劑剝離室內之遠端電漿源，其中該板係構形為由該光阻劑剝離室之一側壁支撐且形成該光阻劑剝離室之一頂壁，該裸鋁板具有一裸鋁及一突出中央突起，該突出中央突起包括一上表面以及自該上表面延伸並相對於該上表面而以一銳角定向之複數個貫穿通道，以致使該等貫穿通道沿放射方向朝外延伸，且該板進一步包括位於不同於該突出中央突起之一部分中並用於施配該反應物之若干貫穿氣體通道。
  2. 如請求項1之裸鋁板，包含一外氧化鋁層，其形成該裸鋁板之外表面，且具有一大約50至300埃厚度及一至少為大約90%氧化鋁理論密度之密度。
  3. 如請求項2之裸鋁板，其中該外氧化鋁層具有一大約50至100埃厚度及一至少為大約95%氧化鋁理論密度之密度。
  4. 如請求項2之裸鋁板，其中該外氧化鋁層係一天然氧化鋁層，其具有一大約25至75埃厚度。
  5. 如請求項1之裸鋁板，包含一內部分及一周邊部分，其中該內部分包括該中央突起及複數個圍繞於該中央突起之同中心配置式氣體通道列，且該周邊部分包括一具有複數個孔之凸緣，其適應於接納固接件，以將該板接附於該側壁。
  6. 如請求項1之裸鋁板，其中該裸鋁板係適應於將一裸鋁內襯支撐在該裸鋁板之一上表面上之複數個內襯支撐件上，以致使當該裸鋁板被支撐在該側壁上時，該內襯鄰近於該光阻劑剝離室之一蓋件且一空間界定於該內襯之一底表面與該裸鋁板之一上表面之間，該空間係供流體流通於該遠端電漿源與該光阻劑剝離室。
  7. 如請求項1之裸鋁板，其係一鋁合金。
  8. 如請求項1之裸鋁板，其係呈圓形且具有一較大於該光阻劑剝離室內部寬度之直徑，因此當該板被支撐在該光阻劑剝離室之該側壁上時，該板之一周邊部分即疊覆於該側壁。
  9. 一種光阻劑剝離裝置，其包含：一光阻劑剝離室；一遠端電漿源，其可操作以產生一電漿及將反應物導送入該光阻劑剝離室；及一如請求項1之裸鋁板，其係由該光阻劑剝離室之一側壁支撐且形成該光阻劑剝離室之一頂壁。
  10. 如請求項9之光阻劑剝離裝置，其中該遠端電漿源包括一微波產生器，其適應於放射微波，以將一製程氣體激發成電漿狀態。
  11. 一種在一光阻劑剝離室內從一基板剝離光阻劑之方法，該方法包含：遠從該光阻劑剝離室將一製程氣體激發成電漿狀態，及將反應物供給至該光阻劑剝離室內，其中一包括一光 阻劑在內之半導體基板被支撐在一基板支撐件上，該光阻劑剝離室包括一側壁及一如請求項1之裸鋁板，該裸鋁板係由該側壁支撐且形成該光阻劑剝離室之一頂壁；及將該反應物通過該板內之氣體通道而施配至該基板上，以利於將該光阻劑從該基板去除。
  12. 如請求項11之方法，其中該板包含一外氧化鋁層，其具有一大約50至300埃厚度及一至少為大約90%氧化鋁理論密度之密度。
  13. 如請求項11之方法，其中該板包含一天然氧化鋁外層，其具有一大約25至75埃厚度。
  14. 如請求項11之方法，其中該製程氣體包含氧及氟。
  15. 一種處理如請求項1之裸鋁板的方法，其包含：a)以一化學溶液處理一具有一第一外氧化鋁層之裸鋁板，該化學溶液可以從該板有效去除汙染物及該第一外氧化鋁層，以曝露出鋁材；及b)將一第二外氧化鋁層形成於該鋁材上，該第二外氧化鋁層具有一大約50至300埃厚度及一至少為大約90%氧化鋁理論密度之密度。
  16. 如請求項15之方法，其中該第二外氧化鋁層具有一大約50至100埃厚度及一至少為大約95%氧化鋁理論密度之密度。
  17. 如請求項15之方法，其中該第一外氧化鋁層係一天然氧化鋁層。
  18. 如請求項15之方法，尚包含在步驟a)及b)之間將該裸鋁 板之表面重新光製。
  19. 如請求項15之方法，其中該第二外氧化鋁層係藉由一電拋光過程而形成於該鋁材上。
  20. 如請求項15之方法，其中該鋁材係一鋁合金。
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US8313635B2 (en) 2012-11-20
US20050284573A1 (en) 2005-12-29
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CN1713078A (zh) 2005-12-28
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US20130056022A1 (en) 2013-03-07
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