US20050161435A1 - Method of plasma etching - Google Patents

Method of plasma etching Download PDF

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Publication number
US20050161435A1
US20050161435A1 US10/508,006 US50800604A US2005161435A1 US 20050161435 A1 US20050161435 A1 US 20050161435A1 US 50800604 A US50800604 A US 50800604A US 2005161435 A1 US2005161435 A1 US 2005161435A1
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plasma etching
treatment chamber
film
plasma
etching
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US10/508,006
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Noriyuki Kobayashi
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Definitions

  • the present invention relates to a plasma etching method to be used in the manufacturing process of semiconductor devices.
  • a gas containing fluorocarbon as a major component has been used as etching gas to plasma etch a SiO 2 film disposed on a substrate to be processed through a pattern of openings in a photoresist.
  • an object of the present invention to provide a plasma etching method for performing a plasma etching without generation of deposits in an etching hole while preventing the etching stop.
  • a plasma etching method including the step of plasma etching a film on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing C x F y (X ⁇ 2) and CF 4 introduced into the treatment chamber to a plasma.
  • the metal compound may be a metal nitride.
  • the metal nitride may be TiN or TaN.
  • the gas containing C x F y (X ⁇ 2) and CF 4 may also include N 2 . Further, the gas may also include Ar.
  • the film on the article to be treated may be a SiO 2 film, a SiC film or a SiOC film.
  • SiOC used herein represents a so-called organic silicon oxide which includes a main chain of —Si—O— and has an organic functional group such as a methyl group at least at a portion of side chains.
  • C x F y (X ⁇ 2) of the gas may be C 4 F 6 .
  • the gas preferably has a ratio of C 4 F 6 flow rate to CF 4 flow rate (C 4 F 6 flow rate/CF 4 flow rate) in the range from 0.12 to 0.20. That is because etching stop occurs if the ratio is greater than 0.20, and deposits (even a few) are formed in a hole or selectivity of an etching target film to a mask (etching rate of the film/etching rate of the mask) becomes decreased if the ratio is less than 0.12.
  • C x F y (X ⁇ 2) of the gas may be C 4 F 8 or C 5 F 8 .
  • a plasma etching method including the step of plasma etching a SiO 2 film disposed on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the SiO 2 film by converting a gas containing C 4 F 6 and N 2 introduced into the treatment chamber to a plasma.
  • a plasma etching method including the step of plasma etching a SiC film disposed on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the SiC film by converting a gas containing C 4 F 6 and N 2 introduced into the treatment chamber to a plasma.
  • a plasma etching method including the step of plasma etching a SiOC film disposed on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the SiOC film by converting a gas containing C 4 F 6 and N 2 introduced into the treatment chamber to a plasma.
  • the metal compound may be a metal nitride.
  • the metal nitride may be TiN or TaN.
  • FIG. 1 shows a schematic cross sectional view of a plasma etching apparatus to which the present invention can be applied
  • FIG. 2 shows a cross sectional view of an etching target portion of an article to be treated.
  • FIG. 1 shows a schematic cross sectional view of a plasma etching apparatus 1 to which the present invention is applied.
  • a frame grounded treatment chamber 2 is formed of metal, e.g., aluminum of which surface is oxidized.
  • a susceptor 5 Inside the treatment chamber 2 , installed on the bottom portion thereof is a susceptor 5 , which functions as a lower electrode of parallel plate electrodes via an insulator 3 .
  • a high pass filter (HPF) 6 is connected to the susceptor 5 .
  • HPF high pass filter
  • an electrostatic chuck 11 Installed on the susceptor 5 is an electrostatic chuck 11 on which an article W to be treated such as a semiconductor wafer is mounted.
  • the electrostatic chuck 11 has an electrode 12 embedded in an insulator, wherein the electrode 12 is connected to a DC power supply 13 which applies a DC voltage to the electrode 12 so that the electrostatic chuck 11 electrostatically attracts and holds the article W to be treated thereon.
  • a focus ring 15 is placed to surround the article to be treated W.
  • the focus ring 15 is made of Si, SiO 2 or the like, and improves etching uniformity.
  • the upper electrode 21 is installed at the upper portion of the treatment chamber 2 through an insulator 22 and includes a showerhead-shaped electrode plate 24 and a supporting body 25 for holding the electrode plate 24 in place.
  • a gas inlet opening 26 is provided in the central portion of the supporting body 25 and is connected to a gas supply line 27 , a valve 28 , a mass flow controller 29 and an etching gas source 30 in the order provided.
  • the etching gas source 30 supplies a gas, for example, C x F y (X ⁇ 2), CF 4 , N 2 , Ar and the like.
  • C x F y (X ⁇ 2) is C 4 F 6 , C 4 F 8 , C 5 F 8 , and the like.
  • a ratio of C 4 F 6 flow rate to CF 4 flow rate (C 4 F 6 flow rate/CF 4 flow rate) is 0.12 to 0.20.
  • N 2 can be used in lieu of CF 4 .
  • a gas exhaust line 31 which is connected to a gas exhaust unit 35 .
  • a gate valve 32 is disposed in a sidewall of the treatment chamber 2 , wherein the article W to be treated is transported between the treatment chamber 2 and a neighboring load-lock chamber (not shown) through the valve.
  • LPF low pass filter
  • a second high frequency power supply 50 is connected to the susceptor 5 serving as the lower electrode via a matching unit 51 .
  • a plasma etching process using the aforementioned plasma etching apparatus 1 will be described in detail, wherein a SiO 2 film on the article to be treated is plasma etched through a pattern of openings of a mask.
  • FIG. 2 there will be described a case where a SiO 2 film 62 formed on a SiN film 61 is plasma etched through a pattern of openings of a TiN mask 63 .
  • the gate valve 32 Upon opening the gate valve 32 , the article W to be treated is loaded into the treatment chamber 2 and mounted on the electrostatic chuck 11 . Next, the gate valve 32 is closed and the treatment chamber 2 is depressurized by the gas exhaust unit 35 . Then, after opening the valve 28 , from the etching gas source 30 , the above etching gas, e.g., an etching gas containing C 4 F 6 , CF 4 , and Ar or an etching gas containing C 4 F 6 , N 2 , and Ar, is supplied.
  • the above etching gas e.g., an etching gas containing C 4 F 6 , CF 4 , and Ar or an etching gas containing C 4 F 6 , N 2 , and Ar, is supplied.
  • a high frequency power is supplied from the high frequency power supply to the upper electrode 21 and to the susceptor serving as the lower electrode, and the SiO 2 film 62 on the article W to be treated is etched by converting the etching gas into a plasma.
  • a DC voltage is applied from the DC power supply 13 to the electrode 12 inside the electrostatic chuck 11 to thereby electrostatically attracts and holds the article W to be treated on the electrostatic chuck 11 .
  • a predetermined emission intensity is detected by an endpoint detector (not shown) and the etching process is terminated based on the detected value.
  • the SiO 2 film 62 is etched through the TiN mask 63 such that it is possible to form etching holes without the generation of deposits in the etching holes and without the occurrence of an etching stop.
  • an etching target is not limited to a SiO 2 film and, particularly, in case the film is formed of at least one component from SiO 2 , SiC and SiOC, the above results are more readily obtainable.
  • TiN instead of using TiN as the mask, TaN or other metal nitride is also acceptable as a mask material.
  • the configuration of the etching apparatus is not limited to that shown in FIG. 1 .
  • a SiO 2 film formed on a silicon wafer was etched through a pattern of openings of a TiN mask.
  • a film such as a SiO 2 film patterned by metal compound such as metal nitride is etched by a plasma generated from a gas containing C x F y (X ⁇ 2) and CF 4 , or a gas containing C 4 F 6 and N 2 , whereby it is possible to prevent etching stop and form etching holes without the generation of deposits in the etching holes.

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  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
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  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

A method of plasma etching which comprises introducing a gas containing CxFy (X≧2) and CF4 into a treatment chamber, and forming a plasma of the gas, to thereby subject a coating film in an article to be treated (W) being present in the treatment chamber to plasma etching through a pattern having openings placed on the coating film. The method can be used for carrying out plasma etching with the suppression of etching-stop phenomenon and without the formation of deposits in an etching hole.

Description

    FIELD OF THE INVENTION
  • The present invention relates to a plasma etching method to be used in the manufacturing process of semiconductor devices.
    • BACKGROUND OF THE INVENTION
  • Conventionally, a gas containing fluorocarbon as a major component has been used as etching gas to plasma etch a SiO2 film disposed on a substrate to be processed through a pattern of openings in a photoresist.
  • However, when the gas having fluorocarbon as a major component is used, by-products tend to accumulate in the holes during an etching process and the etching rate would slow down, thereby inducing a so-called etch stop at which point the etching process is finally terminated. Such tendency to induce an etch stop significantly increases when the hole has a diameter in the order of submicrons and thereby failing to provide microprocessing capability in accordance with the recent demands.
  • Therefore, in order to prevent such an etch stop, adding oxygen to etching gas has been attempted to suppress the formation of by-products in the hole.
  • However, recently, instead of photoresist, hard mask etching by using metal or metal nitride mask has been employed widely. When a gas containing fluorocarbon and oxygen is used in etching SiO2 with metal or metal nitride as a mask, it is problematic that metal oxide deposits are formed in etching holes. Such deposits cannot be removed even by a wet cleaning process. Further, when plasma processing is performed by using a gas containing Cl, the deposits can be removed but the hard mask is etched at the same time.
    • SUMMARY OF THE INVENTION
  • It is, therefore, an object of the present invention to provide a plasma etching method for performing a plasma etching without generation of deposits in an etching hole while preventing the etching stop.
  • In accordance with the present invention, there is provided a plasma etching method including the step of plasma etching a film on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing CxFy(X≧2) and CF4 introduced into the treatment chamber to a plasma.
  • The metal compound may be a metal nitride. The metal nitride may be TiN or TaN.
  • The gas containing CxFy (X≧2) and CF4 may also include N2. Further, the gas may also include Ar.
  • The film on the article to be treated may be a SiO2 film, a SiC film or a SiOC film. SiOC used herein represents a so-called organic silicon oxide which includes a main chain of —Si—O— and has an organic functional group such as a methyl group at least at a portion of side chains.
  • CxFy (X≧2) of the gas may be C4F6. In such a case, the gas preferably has a ratio of C4F6 flow rate to CF4 flow rate (C4F6 flow rate/CF4 flow rate) in the range from 0.12 to 0.20. That is because etching stop occurs if the ratio is greater than 0.20, and deposits (even a few) are formed in a hole or selectivity of an etching target film to a mask (etching rate of the film/etching rate of the mask) becomes decreased if the ratio is less than 0.12. CxFy (X≧2) of the gas may be C4F8 or C5F8.
  • In accordance with the present invention, there is provided a plasma etching method including the step of plasma etching a SiO2 film disposed on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the SiO2 film by converting a gas containing C4F6 and N2 introduced into the treatment chamber to a plasma.
  • Further, in accordance with the present invention, there is provided a plasma etching method including the step of plasma etching a SiC film disposed on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the SiC film by converting a gas containing C4F6 and N2 introduced into the treatment chamber to a plasma.
  • Furthermore, in accordance with the present invention, there is provided a plasma etching method including the step of plasma etching a SiOC film disposed on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the SiOC film by converting a gas containing C4F6 and N2 introduced into the treatment chamber to a plasma.
  • The metal compound may be a metal nitride. The metal nitride may be TiN or TaN.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 shows a schematic cross sectional view of a plasma etching apparatus to which the present invention can be applied; and
  • FIG. 2 shows a cross sectional view of an etching target portion of an article to be treated.
    • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
  • FIG. 1 shows a schematic cross sectional view of a plasma etching apparatus 1 to which the present invention is applied. A frame grounded treatment chamber 2 is formed of metal, e.g., aluminum of which surface is oxidized. Inside the treatment chamber 2, installed on the bottom portion thereof is a susceptor 5, which functions as a lower electrode of parallel plate electrodes via an insulator 3. A high pass filter (HPF) 6 is connected to the susceptor 5.
  • Installed on the susceptor 5 is an electrostatic chuck 11 on which an article W to be treated such as a semiconductor wafer is mounted. The electrostatic chuck 11 has an electrode 12 embedded in an insulator, wherein the electrode 12 is connected to a DC power supply 13 which applies a DC voltage to the electrode 12 so that the electrostatic chuck 11 electrostatically attracts and holds the article W to be treated thereon. Further, a focus ring 15 is placed to surround the article to be treated W. The focus ring 15 is made of Si, SiO2 or the like, and improves etching uniformity.
  • Further, placed above the susceptor 5 is an upper electrode 21 facing the susceptor 5. The upper electrode 21 is installed at the upper portion of the treatment chamber 2 through an insulator 22 and includes a showerhead-shaped electrode plate 24 and a supporting body 25 for holding the electrode plate 24 in place.
  • A gas inlet opening 26 is provided in the central portion of the supporting body 25 and is connected to a gas supply line 27, a valve 28, a mass flow controller 29 and an etching gas source 30 in the order provided. The etching gas source 30 supplies a gas, for example, CxFy (X≧2), CF4, N2, Ar and the like. CxFy (X≧2) is C4F6, C4F8, C5F8, and the like. Further, in case of using C4F6, it is preferable that a ratio of C4F6 flow rate to CF4 flow rate (C4F6 flow rate/CF4 flow rate) is 0.12 to 0.20. In case of using C4F6, N2 can be used in lieu of CF4.
  • In this case, connected to the bottom portion of the treatment chamber 2 is a gas exhaust line 31 which is connected to a gas exhaust unit 35. Further, a gate valve 32 is disposed in a sidewall of the treatment chamber 2, wherein the article W to be treated is transported between the treatment chamber 2 and a neighboring load-lock chamber (not shown) through the valve.
  • Connected to the upper electrode 21 are a low pass filter (LPF) 42 and a first high frequency power supply 40 via a matching unit 41, respectively. A second high frequency power supply 50 is connected to the susceptor 5 serving as the lower electrode via a matching unit 51.
  • Hereinafter, a plasma etching process using the aforementioned plasma etching apparatus 1 will be described in detail, wherein a SiO2 film on the article to be treated is plasma etched through a pattern of openings of a mask. In this case, as shown in FIG. 2, there will be described a case where a SiO2 film 62 formed on a SiN film 61 is plasma etched through a pattern of openings of a TiN mask 63.
  • Upon opening the gate valve 32, the article W to be treated is loaded into the treatment chamber 2 and mounted on the electrostatic chuck 11. Next, the gate valve 32 is closed and the treatment chamber 2 is depressurized by the gas exhaust unit 35. Then, after opening the valve 28, from the etching gas source 30, the above etching gas, e.g., an etching gas containing C4F6, CF4, and Ar or an etching gas containing C4F6, N2, and Ar, is supplied.
  • Under such conditions, a high frequency power is supplied from the high frequency power supply to the upper electrode 21 and to the susceptor serving as the lower electrode, and the SiO2 film 62 on the article W to be treated is etched by converting the etching gas into a plasma. In this case, before or after applying the high frequency power to the upper and the lower electrode, a DC voltage is applied from the DC power supply 13 to the electrode 12 inside the electrostatic chuck 11 to thereby electrostatically attracts and holds the article W to be treated on the electrostatic chuck 11.
  • During the etching process, a predetermined emission intensity is detected by an endpoint detector (not shown) and the etching process is terminated based on the detected value.
  • In the present embodiment, as described above, by using a gas containing CxFy (X≧2) and CF4, or a gas-containing C4F6 for CxFy and N2 instead of CF4, the SiO2 film 62 is etched through the TiN mask 63 such that it is possible to form etching holes without the generation of deposits in the etching holes and without the occurrence of an etching stop.
  • Further, an etching target is not limited to a SiO2 film and, particularly, in case the film is formed of at least one component from SiO2, SiC and SiOC, the above results are more readily obtainable. Further, instead of using TiN as the mask, TaN or other metal nitride is also acceptable as a mask material. In addition, the configuration of the etching apparatus is not limited to that shown in FIG. 1.
    • Embodiments
  • Hereinafter, preferred embodiments of the present invention will be described.
      • Frequency of high frequency power supply applied to upper electrode: 60 MHz
      • High frequency power applied to upper electrode: 1000 W
      • Frequency of high frequency power supply applied to lower electrode: 2 MHz
      • High frequency power applied to lower electrode: 800
      • Temperature of susceptor: 40° C.
      • Pressure in treatment chamber: 6.65 Pa (50 mTorr)
      • Flow rate of etching gas: C4F6 is 0.018 L/min(18 sccm); CF4 is 0.1 L/min (100 sccm); and Ar is 0.6 L/min (600 sccm).
  • Under the above process conditions, as shown in FIG. 2, a SiO2 film formed on a silicon wafer was etched through a pattern of openings of a TiN mask.
  • As a result, deposits were not formed in etching holes and, further, an etching stop did not occur.
  • Further, in case of etching with C5F8 substituting C4F6 in the etching gas in the above embodiment, likewise, it was possible to perform etching without the formation of deposits in etching holes and without the occurrence of etching stop as well.
  • Further, in case of etching with N2 substituting CF4 in the etching gas and doubling the flow rate, i.e., 0.2 L/min (200 sccm) in the above embodiment, similarly, it was possible to perform etching without the formation of deposits in etching holes and the occurrence of etching stop.
  • As described above, in accordance with the present invention, a film such as a SiO2 film patterned by metal compound such as metal nitride is etched by a plasma generated from a gas containing CxFy (X≧2) and CF4, or a gas containing C4F6 and N2, whereby it is possible to prevent etching stop and form etching holes without the generation of deposits in the etching holes.
  • While the invention has been shown and described with respect to the preferred embodiments, it will be understood by those skilled in the art that various changes and modifications may be without departing from the spirit and scope of the invention as defined in the following claims.

Claims (22)

1. A plasma etching method comprising:
plasma etching a film on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing CxFy (X≧2), CF4 and N2 introduced into the treatment chamber to a plasma.
2. The plasma etching method of claim 1, wherein the metal compound is a metal nitride.
3. The plasma etching method of claim 2, wherein the metal nitride is TiN.
4. The plasma etching method of claim 2, wherein the metal nitride is TaN.
5. (canceled)
6. The plasma etching method of claim 1, wherein the gas further includes Ar.
7. A plasma etching method comprising:
plasma etching a SiO2 film on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing CxFy (X≧2) and CF4 introduced into the treatment chamber to a plasma.
8. A plasma etching method comprising:
plasma etching a SiC film on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing CxFy (X≧2) and CF4 introduced into the treatment chamber to a plasma.
9. A plasma etching method comprising:
plasma etching a SiOC film on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing CxFy (X≧2) and CF4 introduced into the treatment chamber to a plasma.
10. A plasma etching method comprising:
plasma etching a film formed of one among SiO2, SiC and SiOC on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing C4F6 and CF4 introduced into the treatment chamber to a plasma.
11. The plasma etching method of claim 10, wherein the gas has a ratio of C4F6 flow rate to CF4 flow rate (C4F6 flow rate/CF4 flow rate) in the range from 0.12 to 0.20.
12. The plasma etching method of claim 1, wherein CxFy (X≧2) of the gas is C4F8.
13. A plasma etching method comprising:
plasma etching a film on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the film by converting a gas containing C5F8 and CF4 introduced into the treatment chamber to a plasma.
14. A plasma etching method comprising:
plasma etching a SiO2 film disposed on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the SiO2 film by converting a gas containing C4F6 and N2 introduced into the treatment chamber to a plasma.
15. A plasma etching method comprising:
plasma etching a SiC film disposed on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the SiC film by converting a gas containing C4F6 and N2 introduced into the treatment chamber to a plasma.
16. A plasma etching method comprising:
plasma etching a SiOC film disposed on an article to be treated accommodated in a treatment chamber through a pattern of openings of a mask made of a metal compound formed on the SiOC film by converting a gas containing C4F6 and N2 introduced into the treatment chamber to a plasma.
17. The plasma etching method of claim 14, wherein the metal compound is a metal nitride.
18. The plasma etching method of claim 17, wherein the metal nitride is TiN.
19. The plasma etching method of claim 17, wherein the metal nitride is TaN.
20. The plasma etching method of claim 7, wherein CxFy (X≧2) of the gas is C4F8.
21. The plasma etching method of claim 8, wherein CxFy (X≧2) of the gas is C4F8.
22. The plasma etching method of claim 9, wherein CxFy (X≧2) of the gas is C4F8.
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JP2002082716A JP4176365B2 (en) 2002-03-25 2002-03-25 Plasma etching method
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JP6833657B2 (en) 2017-11-07 2021-02-24 東京エレクトロン株式会社 How to plasma etch the substrate
JP7195113B2 (en) * 2018-11-07 2022-12-23 東京エレクトロン株式会社 Processing method and substrate processing apparatus

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