CN1713078B - 用于抗蚀剂剥离室的裸铝隔板 - Google Patents
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Abstract
裸铝隔板适用于抗蚀剂剥离室并包括一层外部氧化铝层，所述外部氧化铝层可以是天生的氧化铝层，或者是通过用化学方法处理新的或用过的裸铝隔板所形成的一层，以便形成一层薄的外部氧化铝层。
Description
背景
半导体衬底材料如硅片通过一些技术进行加工，上述技术包括金属、介电材料和半导体材料的淀积法，如化学汽相淀积(CVD)或等离子体增强式化学汽相淀积(PECVD)；腐蚀法；及抗蚀剂剥离法。
半导体集成电路(IC)加工包括在衬底上形成器件。将导电材料层和绝缘材料层淀积在衬底上。抗蚀剂可以作为掩蔽层涂布在层垛上，并形成图案以便保护底层不希望蚀刻的部分。在完成蚀刻加工之后，通过一种剥离技术如用有机剥离剂、氧化型剥离剂、或者利用等离子体蚀刻干法剥离，将抗蚀剂从结构中除去。
概述
提供裸铝隔板，所述裸铝隔板适用于一种等离子体加工设备的抗蚀剂剥离室，上述等离子体加工设备包括一个远距离的等离子体源，以便将反应性成分供应到抗蚀剂剥离室中。隔板的一个优选实施例成形为由抗蚀剂剥离室的一个侧壁支承，同时隔板的穿孔表面面向待在上述室中加工的半导体衬底。隔板的穿孔表面包括用于分配反应性成分的气体通道。
裸铝隔板包括一层外部氧化铝层，所述外部氧化铝层形成隔板的外表面。外层优选的是具有厚度为约—约
，而优选的具有密度为氧化铝理论密度的至少约90％。外部氧化铝层可以是一种天生的氧化铝层，或者它可以通过用化学方法处理新的或用过的裸铝隔板形成。
抗蚀剂剥离设备的一个优选实施例包括：一个抗蚀剂剥离室；一个远距离等离子体源，所述远距离等离子体源可操作，以便产生等离子体并将反应性成分加入抗蚀剂剥离室中；及一个裸铝隔板，所述裸铝隔板由抗蚀剂剥离室的一个侧壁支承。远距离等离子体源优选的是包括一个微波发生器，所述微波发生器发射微波以便将处理气体激发成等离子体状态。
提供了在抗蚀剂剥离室中从半导体衬底剥离抗蚀剂的方法的一个优选实施例，所述方法包括远离抗蚀剂剥离室将一种处理气体激发成等离子体状态，并将反应性成分供应到抗蚀剂剥离室中，在所述抗蚀剂剥离室中将一包括抗蚀剂的衬底支承在衬底支承件上。抗蚀剂剥离室包括一个侧壁和一个裸铝隔板，所述裸铝隔板形成一个顶壁并由侧壁支承。反应性成分通过隔板中的通道分配到上述室中，以便除去衬底上的抗蚀剂。
提供一种处理适用于抗蚀剂剥离室的裸铝隔板的方法的优选实施例，所述方法包括：用一种化学溶液处理具有第一外部氧化铝层的裸铝隔板，上述化学溶液对除去隔板上污染物和第一外部氧化铝层有效，以便露出铝材料；及在铝材料上形成第二外部氧化铝层。第二外部氧化铝层优选的是具有厚度为约
—约，和优选的是具有密度为氧化铝理论密度的至少约90％。
附图简介
图1示出一种抗蚀剂剥离室的一个实施例，包括裸铝隔板的一个优选实施例。
图2示出裸铝隔板的一个优选实施例。
图3示出一种设置在图2所示裸铝隔板上的衬垫。
图4示出一种衬底可以在图1所示的抗蚀剂剥离室中加工的实施例。
详细说明
用于半导体衬底如硅片的等离子体加工设备，包括抗蚀剂剥离室，所述抗蚀剂剥离室在半导体器件制造工艺中用来除去抗蚀剂(或“光致抗蚀剂”)，上述抗蚀剂用作半导体结构的掩膜。例如，抗蚀剂是在一层或多层已经蚀刻在它们之中形成器件之后从底层中除去。在抗蚀剂剥离室中实施从半导体结构中除去抗蚀剂的一种技术是干法剥离，所述干法剥离也称之为“灰化”，它采用等离子体干法蚀刻技术。
在抗蚀剂剥离操作期间，反应性组分分布在一个衬底上，所述衬底包括一个抗蚀剂层，该抗蚀剂层是在抗蚀剂剥离室内进行加工。现已发现，用包括经阳极氧化处理的铝和陶瓷，如石英、碳化硅和兰宝石的材料制成的隔板具有某些缺点。经阳极氧化处理的铝隔板包括一个外部氧化物涂层，所述外部氧化物涂层由铝材料在一种电解液中阳极氧化作用形成。然而，由阳极氧化处理法所形成的经过阳极氧化处理的层包括一个内层和一个外层，它们可能是不希望有的多孔，低密度，并包括缺陷。另外，经过阳极氧化处理的层是厚的，通常具有厚度为约5000—
还已发现，陶瓷材料制的隔板具有低导热系数，同时使它们在半导体衬底加工期间易受到热冲击损坏，还使它们在抗蚀剂剥离期间具有很差的空间温度均匀性，这样降低了从衬底中去除抗蚀剂的均匀性。陶瓷隔板也是脆的，因此，甚至在常规的清洗和处理操作期间也容易发生断裂。另外，石英隔板是自耗部件，亦即它们在抗蚀剂剥离室中的性能随着连续使用而品质变差。
由于上述与在抗蚀剂剥离室中使用经过氧化处理的铝和陶瓷材料有关的缺点，所以进一步进行了研究，以便研制供在抗蚀剂剥离室中用的不同材料的隔板。由于这些研究的结果，出人意料地确定，在抗蚀剂剥离室中可以使用“裸铝”隔板，而没有上述经过阳极氧化处理的铝和陶瓷材料隔板的缺点。如本文所用的，术语“裸铝”意思是指具有“天生的”外部氧化物层的铝或铝合金材料，或者是具有用本发明所述方法一个实施例所形成的薄外部氧化铝层的这种铝或铝合金材料。如本文所述，“薄的”外部氧化铝层具有厚度为约—约
更优选的是约
—约。天生的氧化铝层是当铝材料于环境温度下暴露于含氧气氛中时在氧化铝材料上自然形成。如本文所用的术语“裸铝”不包括经过阳极氧化处理的铝材料，因为它包括经过阳极氧化处理的氧化铝层。
图1示出一个抗蚀剂剥离室10的示例性实施例，其中安装了一种裸铝隔板50的一个优选实施例。抗蚀剂剥离室10包括一个侧壁12，一个底壁14和一个盖16。抗蚀剂剥离室10的壁12，14和盖16可以是任何合适的材料制成，如经过阳极氧化处理的铝，或者裸铝。盖16优选的是通过铰接件枢轴式安装到侧壁12上，以便能打开盖16进入抗蚀剂剥离室10的内部，取出裸铝隔板用于更换或用于其它目的。抗蚀剂剥离室10包括在底壁14中的真空口18。
抗蚀剂剥离室10还包括一个衬底支承件20，在抗蚀剂剥离期间一个半导体衬底22，如一个晶片，安装在上述衬底支承件20上。衬底22包括一种抗蚀剂，所述抗蚀剂提供一种掩蔽层，用于在抗蚀剂剥离过程中保护衬底22的底层。底层可以用导电材料、绝缘材料和/或半导体材料制成。衬底支承件20优选的是包括一种适合于夹紧衬底22的静电吸盘。衬底支承件20优选的是包括一个加热器，如一种电阻式加热元件，所述加热器适合于在抗蚀剂剥离过程中使衬底22保持在一合适的温度下，优选的是使温度保持在约200℃—约300℃下，而更优选的是保持在约250℃—约300℃下。衬底22可以通过设置在侧壁12中的衬底入口26插入抗蚀剂剥离室10和从该剥离室10中取出。例如，衬底22可以在真空下从位于抗蚀剂剥离室附近的蚀刻室转移到抗蚀剂剥离室10的内部。
在实施例中，将一个远距离的等离子源30安装成与抗蚀剂剥离室10流体连通。等离子体源30可操作，以便产生等离子体和把反应性成分通过通道32供入抗蚀剂剥离室10的内部，上述通道32连接到抗蚀剂剥离室10上。反应性成分从支承在衬底支承件20上的衬底22中除去抗蚀剂。所示的等离子体源30的实施例包括一个远距离的能量源34和一个剥离气体源36。能量源34可以是任何合适的能量源，而优选的是一种微波发生器。包括一个微波发生器的示例性设备可从位于美国California的Freemont的Lam Research Corporation购买。在一个优选实施例中，微波发生器在2.45GHz的频率下工作，优选的是具有功率是在约500—约1500W范围内，更优选的是在约1000—约1500W范围内。微波用箭头38表示，它由微波发生器34产生，并通过波导管40传播到通道32中。
气体源36可操作，以便将用箭头42表示的处理气体供应到通道32中，在此处通过由能量源34产生的微波将气体激发成等离子体状态。反应性成分通过开口44转入抗蚀剂剥离室10的内部。
反应性成分在流到衬底22上并剥离抗蚀剂之前，通过位于盖16和衬底支承件20之间的裸铝隔板50分布在抗蚀剂剥离室10中。在抗蚀剂剥离期间，衬底优选的是用一个位于衬底支承件20中的加热器加热。在抗蚀剂剥离期间所产生的废产物通过排出口18泵送出抗蚀剂剥离室10。
如图2所示，裸铝隔板50优选的是一种圆形的裸铝整体。抗蚀剂剥离室10优选的是圆筒形用于单片处理。当适合于安装在圆筒形抗蚀剂剥离室10中时，裸铝隔板50优选的是具有一大于宽度的直径，比如，在抗蚀剂剥离室10内部的直径，因此隔板可以由侧壁12支承。裸铝隔板50包括一个里面部分，所述里面部分具有隆起的中心部分52，该中心部分52具有上表面54和贯通的通道56。在所示的裸铝隔板50的实施例中，中心部分52包括6个在圆周上间隔开的通道56。在另一个实施例中，通道56的总数可以多于或少于6个。在该实施例中，紫外(UV)辐射穿过通道32朝一般垂直于上表面的方向照射在上表面54上。通道56优选的是与表面54或拱形角取向，以防UV辐射的视线直接穿过裸铝隔板50。因此，UV辐射从上表面54和通道56的壁反射，以便它不损伤衬底22。
裸铝隔板50还包括贯通的通道58，所述通道58安排在中心部分52和周边部分60之间。通道58适合于将反应性成分按所希望的流型分配在抗蚀剂剥离室10内部中。如图2所示，通道58优选的是取同心式排列的孔排形式。通道58优选的是具有圆形横截面，和优选的是在裸铝隔板50在从中心部分52朝周边部分60径向向外的方向上横截面大小(比如直径)增加。
如图2所示，裸铝隔板50的周边部分60包括一个凸缘62，所述凸缘62具有圆周上间隔开的孔64，上述孔64用于安放紧固件66，比如螺栓(图1)，以便将裸铝隔板50固定到抗蚀剂剥离室10的侧壁12的顶部表面68上。裸铝隔板50可以从侧壁12上卸下和从抗蚀剂剥离室10中取出，以便处理或更换裸铝隔板，如上所述。
裸铝隔板50用铝或铝合金如6061铝制成，上述铝或铝合金包括按重量计约96—99％Al，约0.8—约1.2％Mg，约0.8％的Si、Cu、Cr，和任选地Fe、Mn、Zn、和/或Ti。
衬垫70适合于支承在裸铝隔板50的上表面72上，以便在抗蚀剂剥离过程中使淀积在盖16底表面上的材料减至最少。在圆周上间隔开的间隔片65设置在上表面72上，以便支承衬垫70和在它们之间形成压力通风系统74(图1)。间隔片65可以用任何合适的材料制成，优选的是用“TEFLON”制成，衬垫70包括一个中央设置的通道44，反应性组分穿过上述通道44从通道32转入压力通风系统74中。衬垫70优选的是用裸铝如6061铝制成。
裸铝隔板50可以是“新的”隔板或者是“用过的”隔板，上述“新的”隔板在抗蚀剂剥离室中未曾用过并包括天生的氧化铝外层，而上述“用过的”隔板亦即以前已在抗蚀剂剥离室中用过，并包括天生的外部氧化铝层或者由本文所述方法所形成的薄外部氧化铝层。这种“新的”或者“用过的”裸铝隔板可以用本文所述的方法处理，以便产生一薄的外部氧化铝层。换句话说，“用过的”裸铝隔板可以用实施本文所述的方法回收。“回收的”包括一个薄的外部氧化铝层的裸铝隔板可以重新安装在抗蚀剂剥离室中并重新用于抗蚀剂剥离处理。
如上所述，包括天生的外部氧化铝层的新裸铝隔板，可以在抗蚀剂剥离室中重新使用。在新的裸铝隔板安装在抗蚀剂剥离室中之前，优选的是将它们进行处理，以便除去残留的污染物如润滑剂，上述污染物由制造隔板产生。
按照裸铝隔板的另一个优选实施例，包括天生的外部氧化铝层的新裸铝隔板可以通过除去天生的氧化铝层进行处理，从而只留下铝基材料；和然后在铝材料露出的表面上形成薄的外部氧化铝层。如果确定具有不足的性能供在抗蚀剂剥离室中使用，比如天生的外部氧化铝层具有不足的密度、厚度和/或均匀度，则除去了天生的外部氧化铝层。在除去天生外部氧化铝层之后所形成的外部氧化铝层优选的是一个单层，优选的是具有厚度为约
—约，更优选的是为约—约
，优选的是具有密度为氧化铝理论密度的至少约90％，更优选的是密度为氧化铝理论密度的至少约95％。因此，薄的氧化铝层与经过阳极氧化处理的氧化铝层相比孔隙度减少。另外，厚的经过阳极氧化处理的氧化物层可能包括不希望有的金属间夹杂物如SiMg或MgSiFe，上述夹杂物降低了上述氧化铝层的质量。
按照裸铝隔板的另一个优选实施例，包括一层天生的外部氧化铝层的用过的裸铝隔板可以通过一个处理工序回收，所述处理工序包括以下步骤：从隔板中除去表面污染物和天生的外部氧化铝层，从而只留下铝基材料；然后在铝基材料露出的表面上形成一层薄的外部氧化铝层。外部氧化铝层优选的一个单层；优选的是具有厚度为约—约
，更优选的是约—约
；及优选的是具有一密度为氧化铝理论密度的至少约90％，更优选的是至少约95％。
按照另一个优选实施例，包括由本文所述方法的实施例所形成的薄外部氧化铝层的用过的裸铝隔板可以进行处理，以便除去外部氧化铝层上的污染物，并且也除去外部氧化铝层本身，然后在最终的铝基材料上形成新的外部氧化铝层。当希望时可以进行这种处理，从而能让象这样处理过的裸铝隔板在抗蚀剂剥离室中重新使用。例如，当确定了抗蚀剂剥离速率减小、在整个晶片上剥离不均匀、和/或在装有裸铝隔板的抗蚀剂剥离室中加工过的衬底上存在颗粒淀积物时，可以进行处理。处理可以进行一次或多次，亦即裸铝隔板可以回收至少一次。
按照一个优选实施例，包括形成氧化铝层状态的裸铝隔板可以进行后处理，以便除去氧化铝层中的微量污染物、颗料物和缺陷。
按照优选实施例，新的和用过的裸铝隔板通过一种化学处理法进行处理，上述化学处理法包括从新的和用过的裸铝隔板中除去表面污染物和天生的氧化铝层，或者从用过的裸铝隔板中除去事先形成的薄氧化铝层和污染物。薄氧化铝层是在除去氧化铝层之后在铝基材料上形成。视各种因素而定，上述因素包括抗蚀剂组成、衬底各层的组成、及用于剥离衬底中抗蚀剂的处理气体混合物，淀积在裸铝隔板的露出的表面上的污染物可以包括例如碳、Ti、TiF4或AlF3。化学处理法包括以下步骤：除去表面污染物和天生的或事先形成的薄外部氧化铝层以便露出铝基材料；然后在铝基材料上形成薄氧化铝层。化学处理法优选的是还包括以下步骤：在除去氧化铝层后精制铝基材料的表面；处理裸铝隔板经过精制的表面，以便在形成薄氧化铝层之前除去污染物。
按照化学处理法的一个优选实施例，新的或用过的裸铝隔板起初进行清洗以便除去淀积物。这些淀积物可能包括衬底中剥离光致抗蚀剂时的有机物以及其它物质如Ti、TiF4或AlF3。清洗优选的是包括首先用合适的碱性清洗液如NoVa120洗液，所述NoVa120洗液购自位于Michigan，Madison Heights的Mehkel Surface Technologies。这种溶液是含有四硼酸钠和一些专用添加剂的非硅酸盐式碱性清洗液。裸铝隔板优选的是在约110℉—约130℉的温度下浸入上述溶液中约5—约15分钟，接着用水漂洗裸铝隔板约3—约5分钟以便从中除去上述清洗液。
在实施例中，裸铝隔板外表面优选的是然后用一种合适的碱性腐蚀液如NoVa SC 60 3B溶液进行腐蚀，上述NoVa SC 60 3B溶液购自Henkel Surface Technology。这种溶液是一种碱性腐蚀液，它主要含有氢氧化钠和一些专用添加剂。裸铝隔板优选的是在约110℉—约130℉的温度下浸入上述溶液中约30秒—约2分钟，接着用水漂洗足够长时间以便除去裸铝隔板中的上述溶液，上述时间通常为约5分钟—约10分钟。漂洗水优选的是超纯水，在环境温度下具有电阻率为至少15Mohm-cm(兆欧—厘米)。
在实施例中，裸铝隔板的外表面然后用一种合适的溶液如NoVa310A&B溶液进行脱氧处理，上述NoVa 310 A&B溶液购自HenkelSurface Technologies。裸铝隔板优选的是浸入上述溶液中足够长的时间，通常是约5—约10分钟，以便除去裸铝隔板的外部氧化铝层。溶液优选的是在大致环境温度下。然后将裸铝隔板优选的是用超纯水漂洗足够长的时间，通常是约5—约10分钟，以便除去上述溶液。经过漂洗的裸铝隔板用例如洁净的干空气或经过过滤的氮气干燥。
在除去氧化铝层之后，裸铝隔板优选的是进行精制，以便形成所希望的表面粗糙度供在抗蚀剂剥离室中使用。例如，经过精制的表面粗糙度可以是约15—约20微英寸。裸铝隔板可以用任何合适的磨料如砂纸进行精制，上述砂纸包括氧化铝磨料，比如220磨料的砂纸。较粗或较细的砂纸也可以用，或者可供选择地，根据裸铝隔板所希望的表面光洁度使用。裸铝隔板可以在重修表面期间旋转，以便增加表面光洁度的均匀度。经过重修表面的裸铝隔板优选的是用超纯水漂洗足够长的时间，通常是约5—约10分钟，以便除去裸铝隔板表面中的松散颗粒物。经过漂洗的裸铝隔板用例如干净的空气或者经过过滤的氮气干燥。
在实施例中，将精制时留在裸铝隔板表面上的污染物除去；优选的是首先用一种合适的碱性清洗液如NoVa120。裸铝隔板优选的是在约110℉—约130℉的温度下浸泡在上述溶液中约5—约15分钟。然后优选的是用超纯水漂洗裸铝隔板约3—约10分钟，以便除去裸铝隔板中残留的碱性清洗液。
在碱性清洗步骤之后，将裸铝隔板用一种酸性清洗液进行清洗，以便在裸铝隔板上形成氧化铝层，上述氧化铝层在完成这个步骤之后将继续在空气中生长。任何合适的酸性清洗液都可以用。优选的酸性清洗液含有约0.25％磷酸和约0.05％氢氟酸的混合物。裸铝隔板优选的是在大致的环境温度下浸入酸性清洗液中约1—约3分钟。然后优选的是用超纯水漂洗裸铝隔板约3—约10分钟，以便除去裸铝隔板中残留的酸性清洗液。
在实施例中，裸铝隔板优选的是然后在一种合适的洁净环境，优选的是在1000级洁净室内于超纯水中进行超声清洗。水优选的是在大致环境温度下。在超声清洗之后，裸铝隔板优选的是用超纯水漂洗，然后用例如洁净的干空气或经过过滤的氮气干燥。
在另一个优选实施例中，新的和/或用过的裸铝隔板可以通过一种方法处理，上述方法包括除去表面污染物和天生的外部氧化铝层或事先形成的薄外部氧化铝层，然后用电解抛光操作手续在裸铝隔板上形成一层薄的外部氧化铝层。在实施例中，污染物和外部氧化铝层可以通过上述步骤除去。
在已从裸铝除去外部氧化铝层露出铝基材料之后，通过将裸铝隔板放在电解抛光槽中对裸铝隔板进行电解抛光，上述电解抛光槽含有一种合适的酸性溶液，优选的是至少含有磷酸的酸性溶液。可以选择电解抛光条件，以便产生具有所希望厚度的氧化铝层，所述厚度优选的是约50—约。氧化铝层具有密度优选的是氧化铝理论密度的至少90％，优选的是理论密度的至少约95％。通常，电解抛光可以进行约30秒—约5分钟，以便产生所希望厚度的氧化铝层。
在实施例中，具有外部氧化铝层的裸铝隔板优选的是在一个洁净环境内如10000级或1000级洁净室内用去离子水漂洗和用超纯水进行超声清洗。然后将裸铝隔板优选的是用氮气或超纯空气干燥。
具有天生的氧化铝外层或者通过上述方法优选实施例所形成的薄氧化铝外层的裸铝隔板可以在抗蚀剂剥离室中使用，而不会产生衬底如半导体片的金属污染、减少抗蚀剂剥离速率、或减少抗蚀剂剥离均匀度。裸铝隔板可以提供抗氧化性和/或抗腐蚀性，上述氧化作用和/或腐蚀作用由腐蚀处理气体产生，所述腐蚀处理气体包括氟化气体。
裸铝隔板与陶瓷材料和经过阳极氧化处理的材料制的裸铝隔板相比，可以提供某些优点。尤其是，裸铝隔板具有比陶瓷隔板高的导热系数，这样可以消除热冲击问题和在裸铝隔板中提供更好的温度均匀性，所述更好的温度均匀性本身又可以改善衬底上的抗蚀剂剥离均匀性。铝还比高纯陶瓷材料便宜。与经过阳极氧化处理的铝隔板相比，裸铝隔板具有一外部氧化铝层，所述外部氧化铝是单层，比这种经过阳极氧化处理的铝隔板的经过阳极氧化处理的层更薄和密度更高。
在抗蚀剂剥离室10中可以处理的一种衬底22的示例性实施例在图4中示出。衬底22描绘出的是在完成金属腐蚀之后但在进行抗蚀剂剥离之前。在另一些实施例中，另一些层可以设置在所示的各层上方、下方或它们之间。另外，不是图4中所示的各层全部存在，其中某些层或所有层可以用别的不同的层代替。
衬底22包括一个基底衬底102，它通常是硅衬底。氧化物层104如SiO2在衬底102上形成。在氧化物层104和叠加的金属层108之间，可以形成一个或多个隔离层106，比如Ti、TiN、TiW或类似物层。
金属层108可以包括比如钨、铝或铝合金，如Al-Cu、Al-Si或Al-Cu-Si。衬底22还可以包括用任何合适材料如TiN或TiW形成的抗反射涂装(ARC)层110。形成图案的抗蚀剂层112设置在ARC层110上。加工的副产品120在壁上示出。
用来形成远距离等离子体的处理气体包括氧，氧激发成等离子体状态，使O2离解成氧基团和离子成分，它们流入抗蚀剂剥离室10内部并与衬底22上的抗蚀剂层112反应(亦即氧化或“灰化”)。通过剥离法除去光致抗蚀剂的速率称之为“剥离速率”。处理气体可以具有任何合适的组成，如一种含氧的气体混合物，如O2/N2、O2/H2O、O2/N2/CF4、或O2/N2/H2O气体混合物。气体混合物优选的是包括O2、N2、和一种含氟成分如CF4或C2F6。可以将N2加到气体混合物中来增加比第二种材料如隔离层和/或底层更好的对光致抗蚀剂材料的选择性。如本文所用的，术语与第二种材料相比对光致抗蚀剂的“选择性”定义为光致抗蚀剂腐蚀速率与第二种材料腐蚀速率的比值。
优选的气体混合物可以含有例如占总体积约40％—约99％，优选的是约60％—约95％，而更优选的是约70％—约90％的O2；约0.5％—约30％，优选的是约2.5％—约20％，而更优选的是约5％—约15％的含氟气体；及约0.5％—30％，优选的是约2.5％—20％，而更优选的是约5％—15％的N2。在抗蚀剂剥离期间，处理气体的总流速优选的是在约500—约6000sccm范围内，更优选的是在约2000—约5000sccm范围内，而抗蚀剂剥离室10中的压力优选的是在约200mTorr(毫乇)—约10Torr(乇)范围内。
本发明已经参照优选实施例进行了说明。然而，对该技术的技术人员来说，很显然，在不脱离本发明的精神情况下，可以用与上述不同的具体形式实施本发明。优选实施例是举例说明用的，而不应看作是限制性的。本发明的范围由所附权利要求书规定，而不是由上述说明规定，并且打算把所有属于权利要求书范围内的变化和等效物都包括在其中。
Claims (18)
1.一种用于等离子体加工设备的裸铝隔板，所述设备包括一个抗蚀剂剥离室和一个远距离等离子体源，该等离子体源可操作地将反应性成分供应到抗蚀剂剥离室中，其中隔板成形为由抗蚀剂剥离室的一个侧壁支承并形成抗蚀剂剥离室的顶壁，所述裸铝隔板包括一个里面部分和一个周边部分，其中该里面部分包括中心突起部分，中心突起部分包括一个上表面和多个贯通的通道，上述贯通的通道相对于上表面成一拱弧角度取向，以便各贯通的通道朝径向向外的方向上延伸向周边部分，且所述隔板包括气体通道用于分配反应性成分，所述裸铝隔板包括形成裸铝隔板外表面的外部氧化铝层，该氧化铝层的厚度为密度为氧化铝理论密度的至少90％，其中所述外部氧化铝层不是阳极氧化处理的层。
2.如权利要求1所述的裸铝隔板，其特征在于，外部氧化铝层的厚度为
密度为氧化铝理论密度的至少95％。
3.如权利要求1所述的裸铝隔板，其特征在于，所述裸铝隔板包括厚度为
的天生的外部氧化铝层。
4.如权利要求1所述的裸铝隔板，其特征在于，其中所述里面部分进一步包括多个同心式排列的气体通道排，所述气体通道排包围中心突起部分，而所述周边部分包括一个凸缘，所述凸缘具有若干适合于容纳紧固件的孔，以便将隔板安装到侧壁上。
5.如权利要求1所述的裸铝隔板，其特征在于，裸铝隔板适合于将裸铝衬垫支承在裸铝隔板上表面上的多个衬垫支承件上，以便当裸铝隔板支承在侧壁上时，衬垫邻近抗蚀剂剥离室的盖，并且压力通风系统限定在衬垫的底表面和裸铝隔板的上表面之间，上述压力通风系统与远距离等离子体源和抗蚀剂剥离室成流体连通。
6.如权利要求1所述的裸铝隔板，其特征在于，该隔板是一种铝合金。
7.如权利要求1所述的裸铝隔板，其特征在于，该隔板是一种圆形形状，并具有一直径大于抗蚀剂剥离室内部的宽度，因此当隔板支承在抗蚀剂剥离室的侧壁上时，隔板的周边部分叠加在侧壁上。
8.一种抗蚀剂剥离设备，包括：
一个抗蚀剂剥离室；
一个远距离等离子体源，所述远距离等离子体源可操作以便产生等离子体并将反应性成分加入到抗蚀剂剥离室中；及
一个按照权利要求1所述的裸铝隔板，所述裸铝隔板由抗蚀剂剥离室的侧壁支承，并形成抗蚀剂剥离室的顶壁。
9.如权利要求8所述的抗蚀剂剥离设备，其特征在于，远距离等离子体源包括一个微波发生器，所述微波发生器适合于发射微波，以便将一种处理气体激发成等离子体状态。
10.一种在抗蚀剂剥离室中剥离衬底中抗蚀剂的方法，所述方法包括：
远离抗蚀剂剥离室将一种处理气体激发成等离子体状态，并将反应性成分供应到抗蚀剂剥离室中，在所述抗蚀剂剥离室中将包括抗蚀剂的半导体衬底支承在一个衬底支承件上，抗蚀剂剥离室包括一个侧壁，按照权利要求1所述的裸铝隔板由上述侧壁支承，并形成抗蚀剂剥离室的顶壁；及
通过隔板中的气体通道将反应性成分分配到衬底上，以便除去衬底中的抗蚀剂。
11.如权利要求10所述的方法，其特征在于，所述裸铝隔板包括厚度为
的天生的外部氧化铝层。
12.如权利要求10所述的方法，其特征在于，处理气体包括氧和氟。
13.一种处理适合于抗蚀剂剥离室的裸铝隔板的方法，包括：
a)用一种化学溶液处理具有第一外部氧化铝层的裸铝隔板，上述化学溶液对除去隔板中污染物和第一外部氧化铝层有效，以便露出铝基材料；及
b)在铝基材料上形成第二外部氧化铝层，第二外部氧化铝层具有厚度为
而密度为氧化铝理论密度的至少90％，其中所述第二外部氧化铝层不是阳极氧化处理的层。
14.如权利要求13所述的方法，其特征在于，第二外部氧化铝层具有厚度为而密度为氧化铝理论密度的至少95％。
15.如权利要求13所述的方法，其特征在于，第一外部氧化铝层是一种天生的氧化铝层。
16.如权利要求13所述的方法，其特征在于，还包括在a)和b)之间精制裸铝隔板的表面。
17.如权利要求13所述的方法，其特征在于，第二外部氧化铝层通过电解抛光手续在铝基材料上形成。
18.如权利要求13所述的方法，其特征在于，所述铝基材料是铝合金。
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI466170B (zh) | 2014-12-21 |
| KR20060049704A (ko) | 2006-05-19 |
| TW200612480A (en) | 2006-04-16 |
| US20100319813A1 (en) | 2010-12-23 |
| CN1713078A (zh) | 2005-12-28 |
| US8313635B2 (en) | 2012-11-20 |
| US20080178906A1 (en) | 2008-07-31 |
| US7811409B2 (en) | 2010-10-12 |
| US8859432B2 (en) | 2014-10-14 |
| KR101117054B1 (ko) | 2012-02-22 |
| US20050284573A1 (en) | 2005-12-29 |
| US20130056022A1 (en) | 2013-03-07 |
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