TWI462158B - Film forming composition - Google Patents
Film forming composition Download PDFInfo
- Publication number
- TWI462158B TWI462158B TW096125439A TW96125439A TWI462158B TW I462158 B TWI462158 B TW I462158B TW 096125439 A TW096125439 A TW 096125439A TW 96125439 A TW96125439 A TW 96125439A TW I462158 B TWI462158 B TW I462158B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- forming composition
- impurity element
- component
- mass
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims description 73
- 239000012535 impurity Substances 0.000 claims description 55
- 238000009792 diffusion process Methods 0.000 claims description 49
- 229920000642 polymer Polymers 0.000 claims description 26
- 229920001451 polypropylene glycol Polymers 0.000 claims description 20
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 17
- 239000011148 porous material Substances 0.000 claims description 16
- 150000003304 ruthenium compounds Chemical class 0.000 claims description 11
- 150000003839 salts Chemical class 0.000 claims description 11
- 239000003638 chemical reducing agent Substances 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 8
- 150000002009 diols Chemical class 0.000 claims description 5
- 229920000098 polyolefin Polymers 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052795 boron group element Inorganic materials 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims description 3
- 229910052696 pnictogen Inorganic materials 0.000 claims description 3
- 150000002291 germanium compounds Chemical class 0.000 claims 2
- 238000000576 coating method Methods 0.000 description 43
- 239000011248 coating agent Substances 0.000 description 41
- 239000004065 semiconductor Substances 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 15
- -1 alkoxy decane Chemical compound 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 12
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 8
- 229910000420 cerium oxide Inorganic materials 0.000 description 8
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 8
- 229910052707 ruthenium Inorganic materials 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 7
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- 238000006460 hydrolysis reaction Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 230000007062 hydrolysis Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000003377 acid catalyst Substances 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 229910052810 boron oxide Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 150000007524 organic acids Chemical class 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 238000012643 polycondensation polymerization Methods 0.000 description 3
- ANBBCZAIOXDZPV-UHFFFAOYSA-N 1,1,1-trimethoxy-2-methyldecane Chemical compound CC(C(OC)(OC)OC)CCCCCCCC ANBBCZAIOXDZPV-UHFFFAOYSA-N 0.000 description 2
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 description 2
- GUBGYTABKSRVRQ-XLOQQCSPSA-N Alpha-Lactose Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)O[C@H](O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-XLOQQCSPSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- PZKBIVOXIFYDRI-UHFFFAOYSA-N CC(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound CC(C(OCC)(OCC)OCC)CCCCCCCC PZKBIVOXIFYDRI-UHFFFAOYSA-N 0.000 description 2
- KXEOJQGXZGUSRW-UHFFFAOYSA-N CC(C(OCCC)(OCCC)OCCC)CCCCCCCC Chemical compound CC(C(OCCC)(OCCC)OCCC)CCCCCCCC KXEOJQGXZGUSRW-UHFFFAOYSA-N 0.000 description 2
- 229930091371 Fructose Natural products 0.000 description 2
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 2
- 239000005715 Fructose Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GUBGYTABKSRVRQ-QKKXKWKRSA-N Lactose Natural products OC[C@H]1O[C@@H](O[C@H]2[C@H](O)[C@@H](O)C(O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@H]1O GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 description 2
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 2
- 229930006000 Sucrose Natural products 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- WQZGKKKJIJFFOK-PHYPRBDBSA-N alpha-D-galactose Chemical compound OC[C@H]1O[C@H](O)[C@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-PHYPRBDBSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 2
- GUBGYTABKSRVRQ-QUYVBRFLSA-N beta-maltose Chemical compound OC[C@H]1O[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@H](O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@@H]1O GUBGYTABKSRVRQ-QUYVBRFLSA-N 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 150000002016 disaccharides Chemical class 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 229930182830 galactose Natural products 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000008103 glucose Substances 0.000 description 2
- 150000004676 glycans Chemical class 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 239000008101 lactose Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 150000002772 monosaccharides Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229920001282 polysaccharide Polymers 0.000 description 2
- 239000005017 polysaccharide Substances 0.000 description 2
- 235000019260 propionic acid Nutrition 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000005720 sucrose Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- GDDPLWAEEWIQKZ-UHFFFAOYSA-N 1,1-diethoxydecane Chemical compound CCCCCCCCCC(OCC)OCC GDDPLWAEEWIQKZ-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- GCZWJRLXIPVNLU-UHFFFAOYSA-N 2,2-dimethoxy-3-methylundecane Chemical compound CC(C(OC)(OC)C)CCCCCCCC GCZWJRLXIPVNLU-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 description 1
- IIEWMRPKJCXTAD-UHFFFAOYSA-N 3-(trimethoxymethyl)undecane Chemical compound C(C)C(C(OC)(OC)OC)CCCCCCCC IIEWMRPKJCXTAD-UHFFFAOYSA-N 0.000 description 1
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 1
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- GNPSQUCXOBDIDY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane Chemical compound C(CCCCCCC)C(C(OC)(OC)OC)CCC GNPSQUCXOBDIDY-UHFFFAOYSA-N 0.000 description 1
- CWJBWBCPFIOIST-UHFFFAOYSA-N 5-phenyltrioxane Chemical compound C1(=CC=CC=C1)C1COOOC1 CWJBWBCPFIOIST-UHFFFAOYSA-N 0.000 description 1
- QNGUFVBAHBNZGW-UHFFFAOYSA-N C(C)C(C(OC)(OC)CC)CCCCCCCC Chemical compound C(C)C(C(OC)(OC)CC)CCCCCCCC QNGUFVBAHBNZGW-UHFFFAOYSA-N 0.000 description 1
- GFPKWPNBGJZRKK-UHFFFAOYSA-N C(C)C(C(OCCC)(OCCC)CC)CCCCCCCC Chemical compound C(C)C(C(OCCC)(OCCC)CC)CCCCCCCC GFPKWPNBGJZRKK-UHFFFAOYSA-N 0.000 description 1
- XSOACBZRHGOSSP-UHFFFAOYSA-N C(C)C(C(OCCC)(OCCC)OCCC)CCCCCCCC Chemical compound C(C)C(C(OCCC)(OCCC)OCCC)CCCCCCCC XSOACBZRHGOSSP-UHFFFAOYSA-N 0.000 description 1
- AEPHJJCJSZQPJB-UHFFFAOYSA-N C(C)C(CCCCCCCCCOC)(CC)CC Chemical compound C(C)C(CCCCCCCCCOC)(CC)CC AEPHJJCJSZQPJB-UHFFFAOYSA-N 0.000 description 1
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- 229910002651 NO3 Inorganic materials 0.000 description 1
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- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000005599 alkyl carboxylate group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001622 bismuth compounds Chemical class 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000003361 porogen Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
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Description
本發明係關於製造不純物半導體時,用以擴散不純物之膜形成組成物。
半導體之製造技術,乃是積體電路等電子產品之製造中所不可或缺的技術,於現今電子產業中肩負主要任務。在半導體製造過程中,藉由將不純物混入(摻雜)矽、鍺等的本質半導體中,而製造出具有電洞之P型半導體與具有自由電子之N型半導體等的不純物半導體。這些不純物半導體,雖然電流通常無法通過,但因其使電子自價帶躍升至傳導帶之所需能量小,只要給予一定之電壓,即可容易地將其轉變為可使電流通過。
摻雜入矽基板之不純物元素,P型半導體使用硼、鎵等的13族元素,N型半導體則使用磷、砷、銻等的15族元素。不純物之擴散方法,目前已開發出各種擴散方法,如氣體擴散法、固體擴散法、塗佈擴散法等已廣為人知。
例如專利文獻1中,說明以固體擴散法進行之不純物擴散方法、以及使用此法製成之摻雜膜(dopant film)。
另一方面,塗佈擴散法則為一種使用含有不純物之塗佈液之方法,藉由將其塗佈於半導體基板上,然後使溶劑揮發,而形成不純物擴散源層,再藉由熱擴散處理使不純物擴散至半導體基板內。此方法具有不需使用昂貴設備,以比較簡單的操作便能夠形成不純物區域之優點。
不過,在半導體基板上形成絕緣膜或是平坦化膜、保護膜時,則係使用二氧化矽系覆膜形成用塗佈液。此二氧化矽系覆膜形成用塗佈液,例如含有烷氧基矽烷等的水解物,藉由將其塗佈於半導體基板上之後進行加熱,則可形成以二氧化矽為主成分之覆膜(例如參照專利文獻2)。
[專利文獻1]日本專利第2639591號公報[專利文獻2]日本特開平9-183948號公報
但是,由於專利文獻1所記載之摻雜膜不含矽,所以並無法達成在不純物擴散的同時,形成二氧化矽系覆膜,並防止其他夾雜物混入等目的。又,專利文獻1所記載之使用摻雜膜之不純物擴散法,由於係使用固體擴散法,故具有需要昂貴設備、不適於大量生產之缺點。另一方面,即使專利文獻2所記載之二氧化矽系覆膜形成用塗佈液更進一步含有氧化硼,也無法使不純物充分擴散,不能達到目標之電阻值。
本發明係鑑於上述課題而完成,其目的係提供一種膜形成組成物,是用於塗佈擴散法中的膜形成組成物,能夠擴散較高濃度的不純物,更能同時形成二氧化矽系覆膜。
本發明者發現,藉由使用含有高分子矽化合物、不純物元素之氧化物或含該元素之鹽類、和成孔劑(porogen)之膜組成物,能將不純物以高濃度擴散至矽晶圓中,並同時使二氧化矽系覆膜形成,而完成了本發明。
具體而言,本發明的目的係提供以下之物。
(1)一種膜形成組合物,是構成擴散膜之膜形成組成物,該擴散膜是用來將不純物元素擴散至矽晶圓中,該組成物含有(A)高分子矽化合物、(B)前述不純物元素之氧化物或含該元素之鹽類、及(C)成孔劑。
又,本發明之膜形成組成物,是構成擴散膜之膜形成組成物,該擴散膜是用來將不純物元素擴散至矽晶圓中,該組成物含有(A)高分子矽化合物、(B)前述不純物元素之氧化物或含該元素之鹽類、及(C)成孔劑。
另外,本發明之膜形成組成物,也可以取代上述(C)成分,而含有用以還原上述(B)成分之還原劑來作為(E)成分。
本發明之膜形成組成物,能用於塗佈擴散法,亦能使較高濃度的不純物元素擴散至矽晶圓中,更能在擴散不純物的同時,形成具有保護膜作用之二氧化矽系覆膜。結果,將能在不純物擴散時,一面抑制夾雜物的混入,一面更有效率地擴散不純物元素。
以下,詳細說明本發明之實施形態。
有關本實施形態之膜形成組成物,此膜形成組成物係含有(A)高分子矽化合物、(B)不純物元素之氧化物或含該元素之鹽類、(C)成孔劑、及(D)能溶解高分子矽化合物之溶劑。
有關本實施形態之膜形成組成物中所含有的高分子矽化合物,並未特別被限定,例如可從主鏈中有Si-O鍵結之矽氧烷類高分子化合物、主鏈中有Si-C鍵結之碳化矽類高分子化合物、主鏈中有Si-Si鏈結之聚矽烷類高分子化合物以及主鏈中有Si-N鍵結之矽氮烷類高分子化合物中任選一種以上。又,也可使用這些化合物之任意混合物。另外,在這些化合物之中特別以使用矽氧烷類高分子化合物為佳。
在有關於本實施形態之膜形成組成物中,用來作為高分子矽化合物之矽氧烷類高分子化合物,較佳為以下述化學式(F)所示之烷氧基矽烷中至少一種作為起始原料之水解.縮合聚合物為佳。
[化學式1]R1 n
-Si(OR2
)4-n
………(F)(式中,R1
係氫原子或1價之有機基,R2
係1價之有機基,n係表示1~3的整數)。
在此,1價之有機基可列舉如烷基、芳基、丙烯基、環氧丙基等。其中,以烷基及芳基為佳。烷基的碳數以1~5為佳,可列舉如甲基、乙基、丙基、丁基等。又,烷基可為直鏈狀、分支狀,以氟取代氫亦可。芳基則以碳數6~20者為佳,可列舉如苯基、萘基等。
化學式(F)所示化合物之具體例,可列舉如下列物質。
(i)n=1時,可列舉如單甲基三甲氧基矽烷、單甲基三乙氧基矽烷、單甲基三丙氧基矽烷、單乙基三甲氧基矽烷、單乙基三乙氧基矽烷、單乙基三丙氧基矽烷、單丙基三甲氧基矽烷以及單丙基三乙氧基矽烷等之單烷基三烷氧基矽烷,單苯基三氧矽烷以及單苯基三乙氧基矽烷等之單苯基三烷氧基矽烷等。
(ii)n=2時,可例舉如二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、二甲基二丙氧基矽烷、二乙基二甲氧基矽烷、二乙基二乙氧基矽烷、二乙基二丙氧基矽烷、二丙基二甲氧基矽烷以及二丙基乙氧基矽烷等之二烷基二烷氧基矽烷,二苯基二甲氧基矽烷以及二苯基二乙氧基矽烷等之二苯基二烷氧基矽烷等。
(iii)n=3時,可例舉如三甲基甲氧基矽烷、三甲基乙氧基矽烷、三甲基丙氧基矽烷、三乙基甲氧基矽烷、三乙基乙氧基矽烷、三乙基丙氧基矽烷、三丙基甲氧基矽烷以及三丙基乙氧基矽烷等之三烷基烷氧基矽烷,三苯基甲氧基矽烷、三苯基乙氧基矽烷等。
其中,使用單甲基三甲氧基矽烷、單甲基三乙氧基矽烷以及單甲基三丙氧基矽烷等之單甲基三烷氧基矽烷為佳。
在有關本實施形態之膜形成組成物中’矽氧烷類高分子化合物的質量平均分子量,以200以上50000以下者為佳,以1000以上3000以下者為更佳。在上述範圍內時,能提高塗佈性及膜形成能力。又,上述矽氧烷類高分子化合物,相對於膜形成組成物全體質量的比例為1~60質量%,而以含10~30質量%者為佳。
化學式(F)所示之烷氧基矽烷之縮合,乃是於添加酸觸媒之有機溶媒中,將烷氧基矽烷水解,藉由使所得的水解物縮合聚合而進行之。添加於反應中之烷氧基矽烷,可以只用一種,亦可複數種混合使用。
烷氧基矽烷之水解及縮合聚合反應,舉例而言,乃是於化學式(F)所示含有一種以上的烷氧基矽烷之有機溶劑中,滴入含酸觸媒之水溶液,使產生反應而進行之。
烷氧基矽烷之水解程度,可藉水之添加量調整之,而水的添加量,一般是相對於前述化學式(F)所示烷氧基矽烷的總莫耳數,以1.0~10.0倍的莫耳數,進行添加。藉由將水添加量的莫耳數,設為烷氧基矽烷總莫耳數的1.0倍以上,水解度將能充分提昇,覆膜之形成亦變得容易。另一方面,藉由將水添加量的莫耳數設為烷氧基矽烷總莫耳數的10.0倍以下,將能抑制縮合聚合所造成之分支狀聚合物的純化、防止膠化作用、提昇膜形成組成物的安定性。
另外,進行化學式(F)所示烷氧基矽烷之水解反應及縮合聚合反應時所添加之酸觸媒,並無特別限定,可使用向來慣用之有機酸與無機酸之任一種。有機酸可列舉如醋酸、丙酸、丁酸等的羧酸,無機酸可列舉如鹽酸、硝酸、硫酸、磷酸等。酸觸媒也可直接添加於溶有烷氧基矽烷之有機溶媒中、或是使之溶解於烷氧基矽烷水解時所用之水中而作為酸性水溶液添加。
由於以上述方式使膜形成組成物含有高分子矽化合物,熱擴散處理時將可生成二氧化矽,而能使二氧化矽系覆膜形成。此二氧化矽系覆膜,由於其作為保護膜之功用,而可防止擴散目標的不純物以外的夾雜物混入。
有關本實施形態的添加於膜形成組成物中之不純物元素,可列舉如13族元素之硼、鎵等,15族元素之磷、砷、銻等,其他元素如鋅、銅等。然後,上述不純物元素可以氧化物、鹵化物、硝酸鹽及硫酸鹽等之無機鹽、醋酸等之有機酸之鹽類形式,添加於膜形成組成物中。具體而言,可列舉如:P2
O5
、NH4
H2
.PO4
、(RO)3
P、(RO)2
P(OH)、(RO)3
PO、(RO)2
P2
O3
(OH)3
、(RO)P(OH)2
等之磷化合物;B2
O3
、(RO)3
B、RB(OH)2
、R2
B(OH)等之硼化合物;H3
SbO4
、(RO)3
Sb、SbX3
、SbOX、Sb4
O5
X等之銻化合物;H3
AsO3
、H2
AsO4
、(RO)3
As、(RO)5
As、(RO)2
As(OH)、R3
AsO、RAs=AsR等之砷化合物;Zn(OR)2
、ZnX2
、Zn(NO2
)2
等之鋅化合物;(RO)3
Ga、RGa(OH)、RGa(OH)2
、R2
Ga[OC(CH3
)=CH-CO-(CH3
)]等之鎵化合物等(但是,R代表鹵素原子、烷基、鏈烯基或芳基,X代表鹵素原子)。
這些化合物之中,以使用氧化硼、氧化磷等為佳。
如此,由於膜形成組成物中含有不純物元素之氧化物或含該元素之鹽類,將該膜形成組成物塗佈於矽晶圓上,再進行熱擴散處理,可使不純物擴散於矽晶圓中。
(A)矽氧烷類高分子化合物與(B)不純物元素之氧化物或含該元素之鹽類之質量比,以1:0.01至1:1之範圍為佳。藉由將(A)成分之量設定於前述範圍內,不僅可使摻雜劑高濃度地擴散,亦容易形成均勻的覆膜。
在本發明中的成孔劑,是一種在焙燒由膜形成組成物所形成的塗膜時會被分解,而在最終形成的二氧化矽系覆膜中形成孔洞之材料。此成孔劑,可以舉出例如:聚烯烴基二醇及其末端烷化物,葡萄糖、果糖、半乳糖等的單糖類及其衍生物,蔗糖、麥芽糖、乳糖等的雙糖類及其衍生物,以及多糖類及其衍生物。這些有機化合物中,以聚烯烴基二醇為佳,以聚丙二醇為更佳。上述成孔劑的質量平均分子量,以300以上10000以下為佳,以500以上5000以下為更佳。藉由將質量平均分子量設在300以上,在塗佈、乾燥膜形成組成物時,可抑制成孔劑的分解及揮發,使其在熱擴散處理時充分作用。另一方面,藉由將質量平均分子量設在10000以下,可使成孔劑在熱擴散處理時易於分解,充分地發揮作用。
又,成孔劑在膜形成組成物中的含量,以相對於膜形成組成物總質量之2質量%~20質量%為佳,以3質量%~10質量%為更佳。
如上所述,藉由含有成孔劑,而可使塗佈在矽晶圓上的膜形成組成物,形成多孔狀二氧化矽系覆膜。一般認為,由於二氧化矽系覆膜成為多孔狀,而能提昇不純物元素於二氧化矽系覆膜內的移動速度,促進該不純物元素擴散至矽晶圓中。又,由於能使如上所述而形成之二氧化矽系覆膜呈多孔狀,所以能夠縮短之後的蝕刻時間。更由於含有上述的成孔劑,而能提昇防止來自膜形成組成物所形成的膜的外部之不純物元素擴散至矽晶圓中的效果。
又,上述成孔劑,較佳為可發揮出作為用以還原不純物元素之還原劑的機能。換言之,有關本實施形態之膜形成組成物,是一種用以構成擴散膜之膜形成組成物,該擴散膜是用來進行將不純物元素擴散至矽晶圓中,該組成物含有(A)高分子矽化合物、(B)前述不純物元素之氧化物或含有該元素之鹽類、及(E)可還原前述(B)成分之還原劑。
作為還原劑使用而發揮機能之成孔劑的具體例,可列舉如聚乙二醇及聚丙二醇等的聚烯烴基二醇及其末端烷化物,葡萄糖、果糖、半乳糖等的單糖類及其衍生物,蔗糖、麥芽糖、乳糖等的雙糖類及其衍生物,以及多醣類及其衍生物。這些有機化合物中,以聚烯烴基二醇為佳,以聚丙二醇為更佳。
還原劑以其氧化物經熱擴散處理後不殘留於二氧化矽系覆膜中者為佳。由於使用此種化合物,而可去除其對半導體特性之不良影響。
成孔劑的添加量可根據添加於膜形成組成物中的不純物元素的氧化物之添加量、高分子矽化合物之含量而適當地設定。在膜形成組成物中的還原劑含量,相對於膜形成組成物全體質量,較佳為2質量%~20質量%者為佳,更佳為3質量%~10質量%。
如上所述,由於含有能還原不純物元素之還原劑,能將不純物元素之氧化物或含該元素之鹽類還原,而使其易於擴散至矽晶圓中。藉此,將能容易地得到具有所希望的電阻值的不純物半導體。
有關本實施形態之膜形成組成物,為提昇膜厚度與塗佈成分的均勻性與塗佈性,而以含有溶劑者為佳。在此情形下,溶劑可使用一般常用之有機溶劑。具體而言,可列舉如甲醇、乙醇、丙醇、丁醇、3-甲氧基-3-甲基-1-丁醇及3-甲氧基-1-丁醇等的一價醇類,甲基-3-甲氧基丙酸酯及乙基-3-乙氧基丙酸酯等的烷基羧酸酯,乙二醇、二伸乙甘醇及丙二醇等的多價醇,乙二醇單甲基醚、乙二醇單乙基醚、乙二醇單丙基醚、乙二醇單丁基醚、丙二醇單甲基醚、丙二醇單乙基醚、丙二醇單丙基醚、丙二醇單丁基醚、乙二醇單甲基醚醋酸鹽、乙二醇單乙基醚醋酸鹽以及丙二醇單甲基醚醋酸鹽等的多價醇之衍生物,醋酸、丙酸等的脂肪酸,丙酮、甲基乙基酮、2-庚酮等的酮類。這些有機溶劑可單獨使用,亦可混合使用。
溶劑的用量並無特別限定,較佳為使得固形物濃度成為1至100質量%,若由提昇塗佈性的觀點而言,則其用量更佳為使得固形物濃度成為3至20質量%。
有關本實施形態之膜形成組成物,亦可依照需要而使之含有界面活性劑。藉由添加界面活性劑,將能提昇對於矽晶圓之塗佈性、平坦性及展開性。這些界面活性劑可單獨使用,亦可混合使用。
有關本實施形態之膜形成組成物,於不損及本發明之效果的範圍內,可配合使用其他樹脂、添加劑等。這些樹脂、添加劑可根據膜形成組成物之使用目的,而選擇適當者添加。
有關本實施形態之膜形成組成物,其塗佈於矽晶圓上而形成膜之後,更進一步以熱擴散處理,而進行二氧化矽系覆膜的形成與不純物擴散。另外,若欲使不純物之擴散僅於目標區域內進行,則在塗佈膜形成組成物之前,先進行保護膜之形成、圖案成形等。
膜形成組成物之塗佈,可依業者通常採用之任何方法而進行。具體的塗佈方法,可列舉如噴霧塗佈法、滾輪塗佈法、旋轉塗佈法等。膜形成組成物之塗佈量,可依固形物濃度而適當地設定。
將膜形成組成物塗佈於矽晶圓上之後,較佳為再將塗佈於矽晶圓上之膜形成組成物進行加熱處理。如此則可於矽晶圓上形成塗佈膜。
為了使不純物自矽晶圓上形成之塗佈膜擴散至矽晶圓中,並使二氧化矽系覆膜形成,而進行熱擴散處理。熱擴散處理例如是自600℃至1200℃之間進行。熱擴散處理時所形成之二氧化矽系覆膜,乃是於熱擴散處理時為防止其他夾雜物擴散至矽晶圓中而作為保護膜之用。因此,所形成之不純物半導體之電阻值能保持相當高之精確度。
熱擴散處理後之二氧化矽系覆膜,藉由蝕刻而除去之。蝕刻乃是採用氫氟酸、氫氟酸與硝酸之混合液、氫氧化鈉及氫氧化鉀等之水溶液等。此時,為使圖案成形,也可以同時除去形成於二氧化矽系覆膜下層之保護膜。
膜形成組成物,是使用「OCD T-1 B型」(東京應化工業製),且相對於全體,添加氧化硼,使得其濃度成為1.5g/100ml,並添加質量平均分子量2000之聚丙二醇,使得其濃度成為5質量%,而調製成。
將上述膜形成組成物旋轉塗佈於矽晶圓上「6 inch CZ-N<100>」(三菱材料公司製)。將其分別以80℃、150℃、200℃加熱處理60秒而形成膜。
將已形成膜之矽晶圓置於充滿氮氣之焙燒爐中,以1000℃分別焙燒15分鐘、30分鐘、45分鐘,而進行熱擴散處理。
將熱擴散處理後之矽晶圓,於5%氫氟酸中,室溫下浸漬10分鐘,自矽晶圓將膜蝕刻而除去。
除了添加質量平均分子量2000之聚丙二醇,使得其濃度成為10質量%以外,以與實施例1相同的方法,調配膜形成組成物,然後形成塗佈膜、進行熱擴散處理與蝕刻。
除了添加質量平均分子量2000之聚丙二醇,使得其濃度成為3質量%以外,以與實施例1相同的方法,調配膜形成組成物,然後形成塗佈膜、進行熱擴散處理與蝕刻。
除了添加質量平均分子量2000之聚丙二醇,使得其濃度成為6質量%以外,以與實施例1相同的方法,調配膜形成組成物,然後形成塗佈膜、進行熱擴散處理與蝕刻。另外,熱擴散處理的時間僅進行30分鐘。
除了添加質量平均分子量2000之聚丙二醇,使得其濃度成為7質量%以外,以與實施例1相同的方法,調配膜形成組成物,然後形成塗佈膜、進行熱擴散處理與蝕刻。另外,熱擴散處理的時間僅進行30分鐘。
除了添加質量平均分子量400之聚丙二醇,使得其濃度成為5質量%以外,以與實施例1相同的方法,調配膜形成組成物,然後形成塗佈膜、進行熱擴散處理與蝕刻。另外,熱擴散處理的時間僅進行15分鐘。
膜形成組成物,是使用「OCD T-1」(東京應化工業製),且相對於全體,添加P2
O5
,使得其濃度成為1.5g/100ml,並添加質量平均分子量4000之聚丙二醇,使得其濃度成為6質量%,而調製成。
將此膜形成組成物,以與實施例同樣的方法,形成塗佈膜,然後以900℃進行熱擴散處理。此熱擴散處理的時間僅進行30分鐘。
除了未添加質量平均分子量2000之聚丙二醇以外,以與實施例1相同的方法,調配膜形成組成物,然後形成塗佈膜、進行熱擴散處理與蝕刻。
除了未添加質量平均分子量4000之聚丙二醇以外,以與實施例7相同的方法,調配膜形成組成物,然後形成塗佈膜、進行熱擴散處理與蝕刻。
對於上述實施例及比較例中的蝕刻後之矽晶圓,進行電阻值之測定。關於因聚丙二醇含量、熱擴散處理時間的不同而造成的電阻值變化,如下列表1所示。
由實施例1、實施例2及比較例1,可知實施例1之矽晶圓電阻值,相較於比較例1者為低。亦即,可知藉由添加聚丙二醇,氧化硼被還原,並有效率地擴散至矽晶圓中。另一方面,可知實施例2相較於實施例1,其電阻值的降低程度較小。
由實施例1、實施例3及比較例1,可知實施例3之矽晶圓電阻值,相較於比較例1者為低,而實施例1之矽晶圓電阻值相較於比較例1者則又更低。
由實施例1、實施例4至6,可知質量平均分子量2000之聚丙二醇的含量越增加,電阻值就越下降。又,在含量為5質量%之情形下比較,則可知質量平均分子量為2000與400之聚丙二醇中,以使用質量平均分子量2000之聚丙二醇(亦即使用較高分子量者)能得到較低電阻值。
更且,由實施例7與比較例2,可知若添加聚丙二醇,則不純物濃度即使僅總量的二十分之一,亦會與未添加聚丙二醇者得到相同程度的電阻值。
Claims (8)
- 一種膜形成組成物,係用以構成擴散膜之膜形成組成物,該擴散膜是用來將不純物元素擴散至矽晶圓中,該膜形成組成物含有:(A)高分子矽化合物、(B)前述不純物元素之氧化物或含該不純物元素之鹽類、及(C)成孔劑,前述(C)成分係用以還原(B)成分之還原劑。
- 如申請專利範圍第1項所述之膜形成組成物,其中更含有(D)可溶解前述高分子矽化合物之溶劑,而前述(C)成分係可溶於此溶劑中的高分子有機化合物。
- 如申請專利範圍第1項所述之膜形成組成物,其中前述(C)成分係聚烯烴基二醇。
- 如申請專利範圍第1項所述之膜形成組成物,其中前述(C)成分係聚丙二醇。
- 如申請專利範圍第1項所述之膜形成組成物,其中前述(C)成分之質量平均分子量為500以上。
- 如申請專利範圍第1項所述之膜形成組成物,其中前述不純物元素係13族元素或15族元素。
- 如申請專利範圍第1項所述之膜形成組成物,其中前述不純物元素係硼或磷。
- 一種膜形成組成物,係用以構成擴散膜之膜形成組成物,該擴散膜是用來將不純物元素擴散至矽晶圓中,該膜形成組成物含有:(A)高分子矽化合物、(B)前述不純物元素之氧化物或含該不純物元素之鹽類、及(E)可還原前述(B)成分之還原劑。
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KR101631711B1 (ko) * | 2008-03-21 | 2016-06-17 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 확산용 인 페이스트 및 그것을 이용한 태양 전지의 제조 방법 |
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KR20090026310A (ko) | 2009-03-12 |
US8563409B2 (en) | 2013-10-22 |
US20090292053A1 (en) | 2009-11-26 |
EP2043136A4 (en) | 2010-08-11 |
KR100993156B1 (ko) | 2010-11-09 |
JP5026008B2 (ja) | 2012-09-12 |
EP2043136A1 (en) | 2009-04-01 |
CN101479833B (zh) | 2012-06-06 |
US20110263110A1 (en) | 2011-10-27 |
TW200811928A (en) | 2008-03-01 |
JP2008021951A (ja) | 2008-01-31 |
CN101479833A (zh) | 2009-07-08 |
ES2401462T3 (es) | 2013-04-19 |
EP2043136B1 (en) | 2012-12-19 |
WO2008007576A1 (en) | 2008-01-17 |
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