TWI450322B - 電漿處理設備及製造半導體裝置之方法 - Google Patents

電漿處理設備及製造半導體裝置之方法 Download PDF

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Publication number
TWI450322B
TWI450322B TW098108469A TW98108469A TWI450322B TW I450322 B TWI450322 B TW I450322B TW 098108469 A TW098108469 A TW 098108469A TW 98108469 A TW98108469 A TW 98108469A TW I450322 B TWI450322 B TW I450322B
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film
layer
reaction chamber
electrode
thin film
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TW098108469A
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Chinese (zh)
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TW201005802A (en
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古野誠
杉山徹朗
野澤太一
一條充弘
田島亮太
山崎舜平
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半導體能源研究所股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
TW098108469A 2008-03-17 2009-03-16 電漿處理設備及製造半導體裝置之方法 TWI450322B (zh)

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JP2008068480 2008-03-17

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TW201005802A TW201005802A (en) 2010-02-01
TWI450322B true TWI450322B (zh) 2014-08-21

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US (1) US8247315B2 (https=)
JP (1) JP5361468B2 (https=)
CN (1) CN101540276B (https=)
TW (1) TWI450322B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
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TWI622081B (zh) * 2015-05-28 2018-04-21 日立全球先端科技股份有限公司 電漿處理裝置及電漿處理方法
TWI779395B (zh) * 2020-11-16 2022-10-01 友威科技股份有限公司 利用電漿蝕刻去除晶圓缺陷的重工處理設備

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TWI556309B (zh) 2009-06-19 2016-11-01 半導體能源研究所股份有限公司 電漿處理裝置，形成膜的方法，和薄膜電晶體的製造方法
US8258025B2 (en) * 2009-08-07 2012-09-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and thin film transistor
KR20130009978A (ko) * 2010-02-26 2013-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자의 제조 방법 및 성막 장치
JP5749071B2 (ja) * 2010-05-18 2015-07-15 株式会社半導体エネルギー研究所 プラズマ処理装置
JP5625624B2 (ja) 2010-08-27 2014-11-19 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
CN103053026A (zh) * 2011-08-10 2013-04-17 松下电器产业株式会社 薄膜晶体管器件以及薄膜晶体管器件的制造方法
JP5883769B2 (ja) * 2012-11-15 2016-03-15 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
CN103745902A (zh) * 2013-12-16 2014-04-23 深圳市华星光电技术有限公司 Pecvd处理装置及在基板上进行pecvd处理的方法
US12051589B2 (en) 2016-06-28 2024-07-30 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
US9824893B1 (en) 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
KR102722138B1 (ko) 2017-02-13 2024-10-24 램 리써치 코포레이션 에어 갭들을 생성하는 방법
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US11355353B2 (en) 2018-01-30 2022-06-07 Lam Research Corporation Tin oxide mandrels in patterning
KR102841279B1 (ko) 2018-03-19 2025-07-31 램 리써치 코포레이션 챔퍼리스 (chamferless) 비아 통합 스킴 (scheme)
KR102748920B1 (ko) 2019-06-27 2024-12-30 램 리써치 코포레이션 교번하는 에칭 및 패시베이션 프로세스
CN111211046B (zh) * 2019-07-08 2020-12-11 合肥晶合集成电路有限公司 预处理方法、金属硅化物的形成方法以及半导体处理装置
TWI850407B (zh) * 2020-06-19 2024-08-01 巴黎文理研究大學 用於基板上液體之經控制沉積的系統及方法、該系統的用途及藉由該方法獲得的產物
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
US12584216B2 (en) 2021-04-21 2026-03-24 Lam Research Corporation Minimizing tin oxide chamber clean time
JP7782212B2 (ja) * 2021-11-04 2025-12-09 東京エレクトロン株式会社 成膜方法、及び成膜装置
TW202529218A (zh) * 2023-08-31 2025-07-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體管線配置設備、用於組裝氣體管線互換件之方法、及氣體管線配置系統

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0445855B1 (en) * 1990-03-09 1994-10-26 VARIAN S.p.A. Improved turbomolecular pump
JPH11204297A (ja) * 1998-01-19 1999-07-30 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP2001326221A (ja) * 1988-01-11 2001-11-22 Tadahiro Omi 薄膜形成装置及び形成方法
US6548113B1 (en) * 1998-12-23 2003-04-15 Pacific Northwest Division Vacuum/gas phase reactor for dehydroxylation and alkylation of porous silica
JP2004087932A (ja) * 2002-08-28 2004-03-18 Mitsubishi Heavy Ind Ltd 光起電力素子の製造方法及び光起電力素子

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
US5091334A (en) 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS6098680A (ja) 1983-11-04 1985-06-01 Seiko Instr & Electronics Ltd 電界効果型薄膜トランジスタ
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPS6187371A (ja) 1984-10-05 1986-05-02 Hitachi Ltd 薄膜半導体装置
KR920003431B1 (ko) 1988-02-05 1992-05-01 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 플라즈마 처리 방법 및 장치
US5256509A (en) 1989-11-20 1993-10-26 Semiconductor Energy Laboratory Co., Ltd. Image-forming member for electrophotography and manufacturing method for the same
JPH03201492A (ja) 1989-12-28 1991-09-03 Toshiba Corp レーザ発振器の光量制御装置
EP0473988A1 (en) 1990-08-29 1992-03-11 International Business Machines Corporation Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region
KR930011413B1 (ko) 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP2791422B2 (ja) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
JP3201492B2 (ja) 1992-03-27 2001-08-20 キヤノン株式会社 非晶質シリコン膜の製造方法、非晶質窒化シリコン膜の製造方法、微結晶シリコン膜の製造方法、及び非単結晶半導体装置
JP2924441B2 (ja) 1992-04-27 1999-07-26 日本電気株式会社 薄膜トランジスタ及びその製造方法
JPH0653137A (ja) * 1992-07-31 1994-02-25 Canon Inc 水素化アモルファスシリコン膜の形成方法
US5540781A (en) * 1993-03-23 1996-07-30 Canon Kabushiki Kaisha Plasma CVD process using a very-high-frequency and plasma CVD apparatus
JP3781787B2 (ja) 1993-10-26 2006-05-31 株式会社半導体エネルギー研究所 多目的基板処理装置およびその動作方法および薄膜集積回路の作製方法
KR100291971B1 (ko) 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
KR100241817B1 (ko) 1993-12-27 2000-02-01 니시무로 타이죠 박막형성법
JP3152829B2 (ja) 1994-01-18 2001-04-03 株式会社東芝 半導体装置の製造方法
TW303526B (https=) 1994-12-27 1997-04-21 Matsushita Electric Industrial Co Ltd
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
JP2661594B2 (ja) 1995-05-25 1997-10-08 日本電気株式会社 薄膜トランジスタおよびその製造方法
JPH11505377A (ja) 1995-08-03 1999-05-18 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体装置
US6057005A (en) * 1996-12-12 2000-05-02 Canon Kabushiki Kaisha Method of forming semiconductor thin film
KR100257158B1 (ko) 1997-06-30 2000-05-15 김영환 박막 트랜지스터 및 그의 제조 방법
JPH11307794A (ja) * 1998-04-22 1999-11-05 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置の製造方法
JPH11246971A (ja) 1998-03-03 1999-09-14 Canon Inc 微結晶シリコン系薄膜の作製方法及び作製装置
JP2000150888A (ja) 1998-11-10 2000-05-30 Matsushita Electric Ind Co Ltd 薄膜トランジスタの形成方法及び薄膜トランジスタ
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP2001007024A (ja) 1999-06-18 2001-01-12 Sanyo Electric Co Ltd 多結晶シリコン膜の形成方法
JP2001077366A (ja) 1999-08-20 2001-03-23 Internatl Business Mach Corp <Ibm> 薄膜トランジスタ、液晶表示装置、及び薄膜トランジスタの製造方法
JP3538088B2 (ja) 1999-10-25 2004-06-14 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタおよびその製造方法
US6875674B2 (en) * 2000-07-10 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorine concentration
JP4889896B2 (ja) * 2000-11-09 2012-03-07 バッテル メモリアル インスティテュート 多孔質シリカの脱ヒドロキシル化およびアルキル化のための真空／気相反応器
JP2002246605A (ja) 2001-02-20 2002-08-30 Matsushita Electric Ind Co Ltd 液晶表示用薄膜トランジスタの製造方法
JP4035298B2 (ja) 2001-07-18 2008-01-16 キヤノン株式会社 プラズマ処理方法、半導体装置の製造方法および半導体装置
EP1443130B1 (en) 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7186663B2 (en) * 2004-03-15 2007-03-06 Sharp Laboratories Of America, Inc. High density plasma process for silicon thin films
TW577176B (en) 2003-03-31 2004-02-21 Ind Tech Res Inst Structure of thin-film transistor, and the manufacturing method thereof
JP2004319920A (ja) 2003-04-18 2004-11-11 Sharp Corp 酸化物半導体の電極およびその製造方法、並びに、酸化物半導体発光素子
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
JP2005167051A (ja) 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
JP4577114B2 (ja) 2005-06-23 2010-11-10 ソニー株式会社 薄膜トランジスタの製造方法および表示装置の製造方法
JP2007035964A (ja) 2005-07-27 2007-02-08 Sony Corp 薄膜トランジスタとその製造方法、及び表示装置
JP2007073698A (ja) 2005-09-06 2007-03-22 Canon Inc トランジスタ
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP2007049171A (ja) 2006-08-30 2007-02-22 Chi Mei Electronics Corp 微結晶薄膜トランジスタを用いた画像表示装置
JP2008235871A (ja) 2007-02-20 2008-10-02 Canon Inc 薄膜トランジスタの形成方法及び表示装置
US8436349B2 (en) 2007-02-20 2013-05-07 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
JP5121254B2 (ja) 2007-02-28 2013-01-16 キヤノン株式会社 薄膜トランジスタおよび表示装置
JP5331389B2 (ja) 2007-06-15 2013-10-30 株式会社半導体エネルギー研究所 表示装置の作製方法
JP5435907B2 (ja) * 2007-08-17 2014-03-05 株式会社半導体エネルギー研究所 表示装置の作製方法
JP5058909B2 (ja) * 2007-08-17 2012-10-24 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び薄膜トランジスタの作製方法
JP5331407B2 (ja) * 2007-08-17 2013-10-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8101444B2 (en) 2007-08-17 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7786485B2 (en) 2008-02-29 2010-08-31 Semicondutor Energy Laboratory Co., Ltd. Thin-film transistor and display device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001326221A (ja) * 1988-01-11 2001-11-22 Tadahiro Omi 薄膜形成装置及び形成方法
EP0445855B1 (en) * 1990-03-09 1994-10-26 VARIAN S.p.A. Improved turbomolecular pump
JPH11204297A (ja) * 1998-01-19 1999-07-30 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
US6548113B1 (en) * 1998-12-23 2003-04-15 Pacific Northwest Division Vacuum/gas phase reactor for dehydroxylation and alkylation of porous silica
JP2004087932A (ja) * 2002-08-28 2004-03-18 Mitsubishi Heavy Ind Ltd 光起電力素子の製造方法及び光起電力素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622081B (zh) * 2015-05-28 2018-04-21 日立全球先端科技股份有限公司 電漿處理裝置及電漿處理方法
TWI779395B (zh) * 2020-11-16 2022-10-01 友威科技股份有限公司 利用電漿蝕刻去除晶圓缺陷的重工處理設備

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