TWI443775B - 半導體構造及於開口內提供導電材料之方法 - Google Patents
半導體構造及於開口內提供導電材料之方法 Download PDFInfo
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- TWI443775B TWI443775B TW100128399A TW100128399A TWI443775B TW I443775 B TWI443775 B TW I443775B TW 100128399 A TW100128399 A TW 100128399A TW 100128399 A TW100128399 A TW 100128399A TW I443775 B TWI443775 B TW I443775B
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- Prior art keywords
- copper
- containing material
- metal
- openings
- cobalt
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- 238000000034 method Methods 0.000 title claims description 58
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000010276 construction Methods 0.000 title claims description 23
- 239000004020 conductor Substances 0.000 title claims description 5
- 239000000463 material Substances 0.000 claims description 126
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 119
- 229910052802 copper Inorganic materials 0.000 claims description 119
- 239000010949 copper Substances 0.000 claims description 119
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 229910017052 cobalt Inorganic materials 0.000 claims description 30
- 239000010941 cobalt Substances 0.000 claims description 30
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 27
- 230000008021 deposition Effects 0.000 claims description 20
- 238000005240 physical vapour deposition Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 229910052715 tantalum Inorganic materials 0.000 claims description 14
- 239000012777 electrically insulating material Substances 0.000 claims description 12
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 10
- 229910052723 transition metal Inorganic materials 0.000 claims description 10
- 150000003624 transition metals Chemical class 0.000 claims description 10
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- 229910052703 rhodium Inorganic materials 0.000 claims description 8
- 239000010948 rhodium Substances 0.000 claims description 8
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 238000005121 nitriding Methods 0.000 claims description 5
- 239000011800 void material Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 238000002294 plasma sputter deposition Methods 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 238000009877 rendering Methods 0.000 claims 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 27
- 230000008569 process Effects 0.000 description 21
- 230000004888 barrier function Effects 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005054 agglomeration Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 239000012772 electrical insulation material Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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Description
本發明係關於半導體構造及於開口內提供導電材料之方法。
製造積體電路可涉及跨越半導體基板形成導電線。可利用鑲嵌製程形成該等線。圖1至3圖解說明實例性先前技術鑲嵌製程。
參照圖1,半導體構造10包括基底12、及在基底上方所形成之電絕緣材料14。基底可包括單晶矽。絕緣材料14可包括(例如)以下中之一或多者:二氧化矽、氮化矽、及各種摻雜氧化矽(例如,硼磷矽酸鹽玻璃(BPSG)、磷矽酸鹽玻璃(PSG)、氟矽酸鹽玻璃(FSG)等)中之任一者。絕緣材料14可為均質的(如圖所示),或可在離散層中包括多種材料。
形成複數個延伸至材料14中之開口16至18。該等開口可藉由以下方式來形成:利用圖案化光阻劑遮罩(未顯示)界定開口之位置,利用一或多種蝕刻劑將開口延伸至該等位置中,且然後移除光阻劑遮罩以留下在圖1中所顯示之結構。
參照圖2,在開口內提供材料20及22以襯砌開口,且然後用銅24填充所襯砌開口。
材料20可包括氮化鈦、氮化鉭、鉭/釕、鉭、或氧化鈦,且可用作障壁以封阻銅擴散。
材料22可包括(例如)釕及氮,或作為另一實例可由釕組成。材料22可以層片(stratum)形式用於黏附隨後沈積之銅24。
參照圖3,使構造10經受拋光處理(例如,化學-機械拋光)以在開口16至18內自材料20、22及24形成複數個電隔離導線25至27。
在圖3中所顯示之導線25至27係理想化形式,其中銅24完全且實質上均勻地填充開口16至18中之每一者。在實踐中,在試圖用銅實質上均勻地填充開口時可能會遇到困難,在開口隨著整合程度變高而逐漸變窄時尤其如此。
圖4圖解說明在開口16至18內形成銅24期間可能出現的問題。具體而言,銅未均勻地沈積於開口內,並因而在一些開口中形成空隙28。如圖所示,空隙可具有不同大小,且開口內最終形成之各個導線之導電性因此將各不相同。該導電性之不均勻性可損害或破壞包括該等導線之積體電路之可操作性及/或可靠性。因而,期望研發製造導電線之經改良方法。
在一些實施例中,利用銅來填充窄開口。可使銅經受在銅內產生足夠移動性之條件(例如,表面擴散)以使銅能夠流入開口中。在特定實施例中,開口可足夠窄以產生幫助將銅帶入開口中之毛細管力。可相對於銅之移動性達成平衡(例如,其可係表面傳輸型機制),以使銅具有足夠動態性以流入開口中,且具有足夠靜態性(或受約束)以避免凝聚。
參照圖5至16闡述一些實例性實施例。
參照圖5,顯示半導體構造30包括基底32、及在基底上方之電絕緣材料34。基底32及電絕緣材料34可分別包含與上文所論述之基底12及電絕緣材料14相同之組成。
在一些實施例中,基底32可包括單晶矽、基本上由其組成、或由其組成,且可稱為半導體基板,或稱為半導體基板之一部分。術語「半導電基板」、「半導體構造」及「半導體基板」意指任一包括半導電材料之構造,該半導電材料包含(但不限於)諸如半導電晶圓等體半導電材料(單獨或在包括其他材料之總成中)、及半導電材料層(單獨或在包括其他材料之總成中)。術語「基板」係指任一支撐結構,包含(但不限於)上文所闡述之半導電基板。雖然顯示基底32為均質的,但在一些實施例中基底可包括許多層。例如,基底32可對應於與積體電路製造相關之含有一或多個層的半導體基板。在該等實施例中,該等層可對應於耐火金屬層、障壁層、擴散層、絕緣體層等中之一或多者。
開口40至42延伸至電絕緣材料34中。該等開口可利用與上文參照圖1所論述用於形成開口16至18之相同製程來形成。
視情況在開口內提供障壁材料36以襯砌開口。障壁材料可包括上文參照圖2之障壁材料20所論述之組成中之任一者。
在障壁材料36上方提供襯墊38。襯墊38係包括釕及鈷中之一或兩者之含金屬材料。在一些實施例中,襯墊可基本上由釕及鈷中之一或兩者組成,或由其組成。在其他實施例中,襯墊可包括一或多種與釕及鈷中之一或兩者形成合金之過渡金屬;且可包括(例如)與釕及鈷中之一或兩者形成合金之鉭、基本上由其組成、或由其組成。在一些實施例中,襯墊可包括氮與釕及鈷中之一或兩者之組合。
參照圖6,跨越構造30並於開口40至42內沈積含銅材料44。含銅材料可包括銅、基本上由其組成、或由其組成。顯示在形成具有如下構形之材料之條件下沈積含銅材料:不均勻填充開口40至42,且在一些開口(具體而言,在所圖解說明實施例中係開口40及41)中留下空隙及/或凹陷。在一些實施例中,含銅材料44可視為圖6中處理階段之含銅塗層,其中該塗層不均勻地填充開口40至42。
較佳在維持含銅材料內之較小粒度(具體而言,粒度小於或等於約四分之一間距)之條件下沈積該材料以避免不期望之表面粗糙度。例如,可在維持構造30及所沈積含銅材料之溫度低於或等於約40℃時物理氣相沈積含銅材料。物理氣相沈積可利用任一用於自靶濺射銅之適當技術,例如,利用自電離電漿。物理氣相沈積可在適宜條件下實施適宜持續時間,以跨越構造30之上表面形成含銅材料44之連續層。
參照圖7,可使含銅材料44經受熱條件,其使得該材料能夠跨越構造30回流,且因而使得能用含銅材料實質上均勻地填充開口40至42。含銅材料之熱處理可係退火,其使含銅材料達到在約180℃至約600℃範圍內之溫度(在一些實施例中,在約180℃至約450℃之範圍內,且在一些實施例中,在約350℃至約450℃之範圍內),且其將含銅材料在該溫度下維持適宜持續時間以使含銅材料能夠回流至開口中。實例性持續時間可係至少約1秒至小於或等於約30秒(例如,約20秒)。回流銅可視為採取第二構形,其較圖6之第一構形在開口40至42中更均勻。具體而言,當含銅材料回流以填充開口時,將圖6開口40及41中之空隙(或凹陷)自開口排出。
雖然圖6及7闡述單一沈積/退火順序將開口40至42填充至期望均勻性之實施例,但在其他實施例中,可實施兩個或更多個沈積/退火順序以將開口填充至期望均勻性。因此,圖6及7之處理可視為處理順序之單一反覆,且可將該反覆重複適當次數以使含銅材料形成期望厚度及均勻性。在一些實施例中,至少一次反覆之溫度、時間、及/或一或多個其他條件可相對於另外至少一次反覆有所不同。在利用兩個或更多個沈積/退火順序之實施例中,可將基板上之含銅材料維持在約180℃至約250℃之溫度範圍內。
圖5至7之處理之優勢在於,隨著開口變得更窄,該處理對於填充開口可變得愈來愈有效。具體而言,該處理可利用窄開口內之毛細管力來幫助將回流之含銅材料抽吸至開口中。因此,除可用於填充目前半導體製程之窄開口以外,圖5至7之方法可容易地應用於填充在較當前製程具有更高整合程度之未來製程中所用之更窄開口。
參照圖8,使構造30經受平面化以在開口40至42內自導電材料36、38及44形成導電線50至52。平面化可包括任一適宜處理,例如化學-機械拋光(CMP)。
雖然圖5至8之實例性處理利用單獨之熱條件用於含銅材料之沈積(圖6)及含銅材料之退火(圖7),但在其他實施例中,可在足夠熱之熱條件下實施沈積以同時實現退火。例如,可在維持所沈積含銅材料之溫度大於100℃之條件下實施含銅材料之沈積。在一些實施例中,該所沈積含銅材料之溫度可在約180℃至約600℃之範圍內;且在特定實施例中可在約300℃至約600℃之範圍內、在約300℃至約450℃之範圍內、或在約500℃至約600℃之範圍內。可將沈積溫度(即,所沈積銅之溫度;其可藉由控制沈積銅之基板之溫度來控制)維持在適宜程度以在含銅材料內維持適宜表面移動性,以使含銅材料達成期望回流,而不會引起材料之凝聚。
若在足夠高溫度下實施沈積,則可省略圖7之單獨退火。替代地,含銅材料可同時沈積及回流,以便材料形成期望之均勻構形。
在一些實施例中,可實施高溫沈積/退火(即,在大於100℃之溫度下之沈積/退火)以在襯墊(例如圖5之襯墊38)上直接形成銅。在其他實施例中,可首先在低溫條件下(例如,在一些實施例中,在所沈積銅之溫度低於或等於0℃之條件下)在襯墊上方形成薄銅晶種層,且然後可實施高溫沈積/退火以在銅晶種層上形成銅。
在一些實施例中,使用間歇性電漿脈衝來實施含銅材料之沈積,以達成溝槽或其他空腔之實質上均勻之填充。具體而言,在所沈積材料之適宜溫度(例如,約400℃)下利用電漿濺射沈積含銅材料;且然後熄滅(即,「消滅」)電漿,同時將所沈積含銅材料之適宜高溫維持足夠持續時間(例如,約15秒),以允許含銅材料表面擴散至溝槽、開口或其他類型之空腔中。表面擴散可允許銅填充空腔,而不會在空腔之頂部夾斷(pinching off)(亦稱為「頸縮(necking off)」)。在空腔頂部之夾斷可在空腔內形成空隙,因此,避免夾斷可緩和、或甚至預防空隙形成。濺射沈積及隨後之電漿消滅可視為用於在空腔內形成含銅材料之製程之單一反覆。可實施多次反覆以將空腔填充至期望程度。
在含銅材料之高溫沈積期間可能出現之困難係,若沈積發生過快或過慢,則材料可能具有較大粒度。該較大粒度可干擾含銅材料之一致回流並導致含銅材料之凝聚,而非均勻填充開口40至42。在一些實施例中,當將沈積室內之溫度維持在約180℃至約450℃之範圍內時,以約20埃/秒至約50埃/秒之速率沈積含銅材料。
可利用任一適宜製程實施沈積。實例性製程包括自含銅靶濺射材料。在一些實施例中,可期望利用具有相對低之濺射速率之沈積製程,其中實例性製程利用稀有氣體(例如氬)或另一惰性物質以自濺射靶濺射含銅材料。
圖9顯示可用於一些實施例中之實例性物理氣相沈積(PVD)裝置56。將含銅靶58保持於裝置之反應室內,並提供於半導體基板30上方。在作業中,自靶濺射含銅材料60,並將該含銅材料沈積於基板30之上表面上方。自靶濺射含銅材料60可使用許多技術中之任一者來實現,包含(例如)利用自電離電漿以自靶移出材料及/或利用惰性氣體以自靶移出材料。可於反應室周圍提供溫度控制設備(未顯示)以使得能夠控制所沈積含銅材料之溫度;且可利用控制溫度之卡盤來支撐基板30,以便可在PVD製程期間準確控制基板30之溫度。
如上文參照圖5所論述,一些實施例包含利用金屬氮化物用於襯墊38。圖10至13顯示形成並利用含氮材料用於襯墊之實例性實施例。
參照圖10,顯示處於與圖5類似之處理階段之半導體構造30a。該構造包含基底32、絕緣材料34、障壁層36及襯墊38。在一些實施例中,圖10之襯墊38可包括釕及鈷中之一或兩者、基本上由其組成、或由其組成。在其他實施例中,圖10之襯墊38可包括一或多種過渡金屬(例如鉭)與釕及鈷中之一或兩者之組合、基本上由其組成、或由其組成。
參照圖11,將襯墊38暴露於含氮組合物70以使襯墊材料氮化。含氮組合物70可係任一適宜組合物,且在一些實施例中,可包括NH3
、NH2
、及N2
中之一或多者。在一些實施例中,含氮組合物可與另一組合物組合使用。例如,NH3
可與O2
組合使用;且N2
可與H2
組合使用。
襯墊材料之氮化可將部分或全部襯墊轉化成含有金屬及氮之組合物。在一些實施例中,氮化襯墊可含有氮與鈷及釕中之一或兩者之組合。在一些實施例中,氮化襯墊可含有氮與過渡金屬(例如鉭)及鈷及釕中之一或兩者之組合。
參照圖12,將含銅材料44沈積於開口40至42內。該沈積可利用任一適宜方法,且在一些實施例中可利用上文參照圖5至9所論述方法中之一者。在一些實施例中,使襯墊38內之金屬氮化可有利於使銅均勻回流至開口40至42中。
參照圖13,使構造30a經受平面化以形成電隔離線50至52。該等線中之每一者包括含銅材料44(在一些實施例中,其可由銅組成),其直接抵靠含氮材料38(在一些實施例中,其可由氮與釕及鈷中之一或兩者之組合組成;且在一些實施例中,可由氮及一或多種過渡金屬與釕及鈷中之一或兩者之組合組成)。
雖然將圖10至13之含氮襯墊闡述為藉由將含金屬襯墊暴露於氮而形成,但在其他實施例中,可利用ALD、CVD及PVD中之一或多者直接沈積含氮襯墊。例如,含氮襯墊可包括氮與釕及鈷中之一或兩者之組合、基本上由其組成、或由其組成,且可藉由ALD、CVD及/或PVD直接沈積。在其他實施例中,含氮襯墊可包括氮及一或多種過渡金屬與釕及鈷中之一或兩者之組合、基本上由其組成、或由其組成,且可藉由ALD、CVD及/或PVD直接沈積。
在襯墊38包括一或多種與釕及鈷中之一或兩者形成合金之過渡金屬的應用中,可期望省略障壁36。具體而言,襯墊38可能能夠達成作為銅遷移之障壁及作為保持含銅材料之層片之兩種功能。
圖14至16圖解說明省略障壁36(圖5)之實例性實施例。圖14顯示處於與圖5類似之處理階段之半導體構造30b。構造30b包含上文參照圖5所論述之基底32及絕緣材料34。開口40至42延伸至絕緣材料34中。襯墊80跨越絕緣材料34之上表面及在開口40至42內延伸,其中該襯墊襯砌該等開口之側壁。襯墊80可包括與釕及鈷中之一或兩者形成合金之過渡金屬(例如鉭)、基本上由其組成、或由其組成。在一些實施例中,襯墊80可包括氮及一或多種過渡金屬(例如鉭)與釕及鈷中之一或兩者之組合、基本上由其組成、或由其組成。
襯墊80直接抵靠電絕緣材料34。在一些實施例中,電絕緣材料34可係含氧化矽材料(例如,二氧化矽、BPSG、PSG、FSG等),且襯墊80可直接抵靠該含氧化矽材料。
參照圖15,將含銅材料44沈積於開口40至42內。該沈積可利用任一適宜方法,且在一些實施例中可利用上文參照圖5至9所論述方法中之一者。
參照圖16,使構造30b經受平面化以形成電隔離線90至92。該等線中之每一者包括直接抵靠襯墊80之含銅材料44,襯墊80進而直接抵靠電絕緣材料34。
上文所論述實施例可用於形成積體電路。該電路可用於電子系統中,例如,電腦、汽車、飛機、時鐘、蜂巢式電話等。在一些應用中,本文所闡述實施例可用於形成積體記憶體,例如快閃記憶體。
各個實施例在圖式中之特定定向僅用於圖解說明之目的,且在一些應用中,實施例可相對於所顯示定向而旋轉。本文所提供之說明書及下文之申請專利範圍係關於任一在各個特徵之間具有所闡述關係之結構,不管結構是否處於該等圖式之特定定向中或相對於該定向而旋轉。
當上文提及一元件「位於」另一元件上或「抵靠」另一元件時,其可直接位於另一元件上或亦可存在插入元件。相反,當提及一元件「直接位於」另一元件上或「直接抵靠」另一元件時,不存在插入元件。當提及一元件「連接」或「耦合」至另一元件時,其可直接連接或耦合至另一元件或可存在插入元件。相反,當提及一元件「直接連接」或「直接耦合」至另一元件時,不存在插入元件。
10...半導體構造
12...基底
14...電絕緣材料
16...開口
17...開口
18...開口
20...障壁材料
22...材料
24...銅
25...電隔離導線
26...電隔離導線
27...電隔離導線
28...空隙
30...半導體構造
30a...半導體構造
30b...半導體構造
32...基底
34...電絕緣材料
36...障壁材料
38...襯墊
40...開口
41...開口
42...開口
44...含銅材料
50...導電線
51...導電線
52...導電線
56...物理氣相沈積(PVD)裝置
58...含銅靶
60...含銅材料
70...含氮組合物
80...襯墊
90...電隔離線
91...電隔離線
92...電隔離線
圖1至3係半導體晶圓之一部分在先前技術製程之各個階段中之圖解性剖視圖。
圖4係半導體晶圓之一部分之圖解性剖視圖,其顯示在一些先前技術製程中可能出現之問題。
圖5至8係半導體晶圓之一部分的圖解性剖視圖,據顯示其處於實例性實施例製程之各個階段中。
圖9係正在反應室中物理氣相沈積於晶圓上之材料之圖解性剖視圖。
圖10至13係半導體晶圓之一部分的圖解性剖視圖,據顯示其處於另一實例性實施例製程之各個階段中。
圖14至16係半導體晶圓之一部分的圖解性剖視圖,據顯示其處於另一實例性實施例製程之各個階段中。
30...半導體構造
32...基底
34...電絕緣材料
36...障壁材料
38...襯墊
40...開口
41...開口
42...開口
44...含銅材料
50...導電線
51...導電線
52...導電線
Claims (35)
- 一種將不含空隙之含銅材料沈積於複數個開口內之方法,其包括該含銅材料在所沈積含銅材料之溫度大於100℃之條件下之物理氣相沈積,該經沈積之含銅材料不含空隙且具有小於四分之一間距之粒度。
- 如請求項1之方法,其中該沈積包括以下順序之至少一次反覆:利用電漿濺射沈積該含銅材料,其中所濺射沈積材料之溫度大於100℃;及當維持該所濺射沈積材料之溫度大於100℃時,熄滅該電漿並提供足夠之持續時間以使該所濺射沈積材料表面擴散至空腔中,從而避免夾斷(pinching off)該等空腔。
- 如請求項1之方法,其中該溫度在約300℃至約600℃之範圍內。
- 如請求項1之方法,其中該溫度在約500℃至約600℃之範圍內。
- 如請求項1之方法,其中在該物理氣相沈積期間利用稀有氣體自靶濺射含銅材料。
- 如請求項1之方法,其進一步包括在該含銅材料之該物理氣相沈積之前,在該等開口內形成含有金屬及氮之組合物以襯砌該等開口。
- 如請求項6之方法,其中該金屬包括釕及鈷中之一或兩者。
- 如請求項1之方法,其進一步包括在該含銅材料之該物理氣相沈積之前,使用包括釕及鈷中之一或兩者之含金屬材料襯砌該等開口。
- 如請求項1之方法,其進一步包括在該含銅材料之該物理氣相沈積之前:使用第一金屬襯砌該等開口;及藉由將該第一金屬暴露於氮源以使該第一金屬氮化。
- 如請求項9之方法,其中該金屬由釕及鈷中之一或兩者組成。
- 一種在複數個開口內提供包括不含空隙之含銅材料之導電材料之方法,其包括:使用含金屬組合物襯砌該等開口;及以下之至少一次反覆:在該含金屬組合物上物理氣相沈積含銅材料,該物理氣相沈積係在維持所沈積銅之溫度低於或等於約0℃之條件下實施,以形成具有第一構形之含銅材料塗層;及在該含銅材料之溫度在約180℃至約250℃之範圍內之條件下使該含銅材料退火,以使該塗層之該含銅材料回流並由此形成該含銅材料之第二構形,該含銅材料之第二構形不含空隙且具有小於四分之一間距之粒度。
- 如請求項11之方法,其中該含金屬組合物由釕及鈷中之一或兩者組成。
- 如請求項11之方法,其中該含金屬組合物由氮與釕及鈷中之一或兩者之組合組成。
- 如請求項11之方法,其中該含銅材料之該第一構形在該等開口內留下一些空隙,且該含銅材料之該第二構形自該等開口移出該等空隙。
- 一種在複數個開口內提供包括不含空隙之含銅材料之導電材料之方法,其包括:使用含有金屬及氮之組合物來襯砌該等開口;及使用不含空隙且具有小於四分之一間距之粒度之含銅材料至少部分地填充所襯砌開口。
- 如請求項15之方法,其中該使用含銅材料至少部分地填充該等開口係利用該含銅材料在使所沈積含銅材料之溫度大於100℃之條件下之物理氣相沈積。
- 如請求項16之方法,其中該溫度在約300℃至約600℃之範圍內。
- 如請求項15之方法,其中該使用含銅材料至少部分地填充該等開口係利用:該含銅材料在維持該所沈積含銅材料之溫度低於或等於約40℃之條件下之沈積,以形成該含銅材料之第一構形;及在該沈積之後,使該含銅材料在該所沈積含銅材料之溫度在約180℃至約250℃之範圍內之條件下退火,以使該含銅材料回流並由此形成該含銅材料之第二構形。
- 如請求項18之方法,其中該含銅材料之該第一構形在該 等開口內留下一些凹陷,且該含銅材料之該第二構形自該等開口移出該等凹陷。
- 如請求項15之方法,其中該形成該所襯砌開口係包括該含有金屬及氮之組合物沿該等開口之側壁之沈積。
- 如請求項20之方法,其中該金屬由釕及鈷中之一或兩者組成。
- 如請求項20之方法,其中該含有金屬及氮之組合物之該沈積係使用ALD、CVD及PVD中之一或多者。
- 如請求項15之方法,其中該形成該所襯砌開口係包括:使用該金屬塗佈該等開口之側壁;及藉由將該金屬暴露於氮源以使該金屬氮化。
- 如請求項23之方法,其中該金屬包括釕及鈷中之一或兩者。
- 如請求項23之方法,其中該金屬包括與釕及鈷中之一或兩者形成合金之過渡金屬。
- 如請求項23之方法,其中該金屬包括與釕及鈷中之一或兩者形成合金之鉭。
- 如請求項23之方法,其中該氮化係包括使該金屬暴露於NH3 、NH2 、及N2 中之一或多者中。
- 一種包含不含空隙之含銅材料之半導體構造,其包括:開口,其僅部份延伸至電絕緣材料中;金屬氮化物襯墊,其襯砌該開口之側壁;及含銅材料,其位於該開口內且直接抵靠該金屬氮化物襯墊,且該含銅材料不含空隙及具有小於四分之一間距 之粒度。
- 如請求項28之構造,其中該金屬氮化物襯墊之該金屬包括釕及鈷中之一或兩者。
- 如請求項28之構造,其中該金屬氮化物襯墊之該金屬包括與釕及鈷中之一或兩者形成合金之過渡金屬。
- 如請求項30之構造,其中該金屬氮化物襯墊直接抵靠該電絕緣材料。
- 如請求項28之構造,其中該金屬氮化物襯墊之該金屬包括與釕及鈷中之一或兩者形成合金之鉭。
- 如請求項28之構造,其中該金屬氮化物襯墊之該金屬包括與釕及鈷中之一或兩者形成合金之鉭;其中該電絕緣材料包括含氧化矽電絕緣材料;且其中該金屬氮化物襯墊直接抵靠該含氧化矽電絕緣材料。
- 如請求項28之構造,其中該金屬氮化物襯墊之該金屬由釕組成。
- 如請求項28之構造,其中該金屬氮化物襯墊之該金屬由鈷組成。
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2011
- 2011-07-22 CN CN2011800401938A patent/CN103081066A/zh active Pending
- 2011-07-22 WO PCT/US2011/045067 patent/WO2012024056A2/en active Application Filing
- 2011-07-22 JP JP2013524857A patent/JP2013534370A/ja active Pending
- 2011-07-22 SG SG2013012026A patent/SG188236A1/en unknown
- 2011-07-22 KR KR1020137006043A patent/KR20130044354A/ko active Search and Examination
- 2011-08-09 TW TW100128399A patent/TWI443775B/zh active
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2015
- 2015-11-02 US US14/930,524 patent/US10121697B2/en active Active
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2018
- 2018-08-14 US US16/103,012 patent/US10879113B2/en active Active
Also Published As
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US20180374745A1 (en) | 2018-12-27 |
WO2012024056A3 (en) | 2012-04-19 |
US20120043658A1 (en) | 2012-02-23 |
WO2012024056A2 (en) | 2012-02-23 |
TW201216410A (en) | 2012-04-16 |
KR20130044354A (ko) | 2013-05-02 |
SG188236A1 (en) | 2013-04-30 |
US10879113B2 (en) | 2020-12-29 |
JP2013534370A (ja) | 2013-09-02 |
US20160056073A1 (en) | 2016-02-25 |
CN103081066A (zh) | 2013-05-01 |
US10121697B2 (en) | 2018-11-06 |
US9177917B2 (en) | 2015-11-03 |
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