TWI427719B - The joint structure of the joining wire and its forming method - Google Patents

The joint structure of the joining wire and its forming method Download PDF

Info

Publication number
TWI427719B
TWI427719B TW097101599A TW97101599A TWI427719B TW I427719 B TWI427719 B TW I427719B TW 097101599 A TW097101599 A TW 097101599A TW 97101599 A TW97101599 A TW 97101599A TW I427719 B TWI427719 B TW I427719B
Authority
TW
Taiwan
Prior art keywords
bonding wire
bonding
layer
ball
conductive metal
Prior art date
Application number
TW097101599A
Other languages
English (en)
Chinese (zh)
Other versions
TW200839909A (en
Inventor
宇野智裕
寺嶋晋一
木村圭一
山田隆
西林景仁
Original Assignee
新日鐵住金高新材料股份有限公司
日鐵住金新材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新日鐵住金高新材料股份有限公司, 日鐵住金新材料股份有限公司 filed Critical 新日鐵住金高新材料股份有限公司
Publication of TW200839909A publication Critical patent/TW200839909A/zh
Application granted granted Critical
Publication of TWI427719B publication Critical patent/TWI427719B/zh

Links

Classifications

    • H10W72/0711—
    • H10W72/015—
    • H10W72/075—
    • H10W72/50—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4382—Applying permanent coating, e.g. in-situ coating
    • H01L2224/43821—Spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H10W72/01515—
    • H10W72/01551—
    • H10W72/01565—
    • H10W72/07125—
    • H10W72/07141—
    • H10W72/07511—
    • H10W72/07521—
    • H10W72/07532—
    • H10W72/07533—
    • H10W72/07541—
    • H10W72/07552—
    • H10W72/521—
    • H10W72/522—
    • H10W72/536—
    • H10W72/543—
    • H10W72/552—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/5525—
    • H10W72/555—
    • H10W72/59—
    • H10W72/952—
    • H10W74/00—
    • H10W90/754—
    • H10W90/756—

Landscapes

  • Wire Bonding (AREA)
TW097101599A 2007-01-15 2008-01-15 The joint structure of the joining wire and its forming method TWI427719B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007006446 2007-01-15
PCT/JP2008/050314 WO2008087922A1 (ja) 2007-01-15 2008-01-15 ボンディングワイヤの接合構造及びその形成方法

Publications (2)

Publication Number Publication Date
TW200839909A TW200839909A (en) 2008-10-01
TWI427719B true TWI427719B (zh) 2014-02-21

Family

ID=39635926

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097101599A TWI427719B (zh) 2007-01-15 2008-01-15 The joint structure of the joining wire and its forming method

Country Status (5)

Country Link
US (1) US8247911B2 (enExample)
JP (2) JP4941901B2 (enExample)
KR (1) KR101280668B1 (enExample)
TW (1) TWI427719B (enExample)
WO (1) WO2008087922A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9331049B2 (en) * 2008-07-11 2016-05-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding structure of bonding wire
JP5109881B2 (ja) * 2008-09-04 2012-12-26 住友金属鉱山株式会社 銅ボンディングワイヤ
DE102008054077B4 (de) * 2008-10-31 2021-04-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren und Vorrichtung zur Herstellung von Bonddrähten auf der Grundlage mikroelektronischer Herstellungstechniken
US20120153444A1 (en) * 2009-06-18 2012-06-21 Rohm Co., Ltd Semiconductor device
JPWO2010147187A1 (ja) 2009-06-18 2012-12-06 ローム株式会社 半導体装置
JP5550369B2 (ja) 2010-02-03 2014-07-16 新日鉄住金マテリアルズ株式会社 半導体用銅ボンディングワイヤとその接合構造
JP5519419B2 (ja) * 2010-06-14 2014-06-11 田中電子工業株式会社 高温半導体素子用平角状パラジウム（Ｐｄ）又は白金（Ｐｔ）被覆銅リボン
US20120001336A1 (en) * 2010-07-02 2012-01-05 Texas Instruments Incorporated Corrosion-resistant copper-to-aluminum bonds
JP5087795B2 (ja) * 2010-08-30 2012-12-05 住友金属鉱山株式会社 ボンディングワイヤ
JP5616739B2 (ja) 2010-10-01 2014-10-29 新日鉄住金マテリアルズ株式会社 複層銅ボンディングワイヤの接合構造
US9086553B2 (en) 2011-06-27 2015-07-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Optical communications device having electrical bond pads that are protected by a protective coating, and a method for applying the protective coating
JP6307832B2 (ja) * 2013-01-22 2018-04-11 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール
US9343422B2 (en) 2014-03-31 2016-05-17 Freescale Semiconductor, Inc. Structure for aluminum pad metal under ball bond
US9368470B2 (en) 2014-10-31 2016-06-14 Freescale Semiconductor, Inc. Coated bonding wire and methods for bonding using same
JP6467281B2 (ja) * 2015-04-30 2019-02-13 日鉄マイクロメタル株式会社 ボンディングワイヤのボール形成方法
JP6002300B1 (ja) 2015-09-02 2016-10-05 田中電子工業株式会社 ボールボンディング用パラジウム（Ｐｄ）被覆銅ワイヤ
JP6047214B1 (ja) * 2015-11-02 2016-12-21 田中電子工業株式会社 ボールボンディング用貴金属被覆銅ワイヤ
JP6354744B2 (ja) 2015-12-21 2018-07-11 トヨタ自動車株式会社 銅線の接合方法
JP6507329B1 (ja) * 2019-02-08 2019-04-24 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ、ワイヤ接合構造、半導体装置及び半導体装置の製造方法
WO2020183748A1 (ja) 2019-03-12 2020-09-17 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ、パラジウム被覆銅ボンディングワイヤの製造方法、及びこれを用いたワイヤ接合構造、半導体装置並びにその製造方法
WO2022162716A1 (ja) * 2021-01-26 2022-08-04 株式会社新川 ワイヤボンディング装置、ワイヤボンディング装置の制御方法およびワイヤボンディング装置の制御プログラム
TWI834171B (zh) * 2022-05-19 2024-03-01 日商新川股份有限公司 打線接合裝置、維護方法以及程式
CN116690399B (zh) * 2023-08-07 2023-09-26 烟台一诺电子材料有限公司 一种键合丝抛光涂层一体化装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US20040245320A1 (en) * 2001-10-23 2004-12-09 Mesato Fukagaya Bonding wire
JP2006190763A (ja) * 2005-01-05 2006-07-20 Nippon Steel Corp 半導体装置用ボンディングワイヤ

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994838A (ja) * 1982-11-24 1984-05-31 Nec Corp ワイヤボンデイング装置
JPS5994837A (ja) * 1982-11-24 1984-05-31 Nec Corp ワイヤボンデイング装置
JPS6152333A (ja) * 1984-08-21 1986-03-15 Toshiba Corp ボンデイングワイヤ−
JPS6158247A (ja) * 1984-08-30 1986-03-25 Toshiba Corp ワイヤボンデイング方法
JPS6199645A (ja) 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS6297360A (ja) 1985-10-24 1987-05-06 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用表面被覆高純度銅極細線
JPS6324660A (ja) 1986-07-17 1988-02-02 Toshiba Corp 半導体記憶装置およびその製造方法
JPH0354837A (ja) * 1989-07-24 1991-03-08 Nippon Steel Corp ワイヤーボンディング方法
DE69729759T2 (de) * 1996-10-01 2005-07-07 Matsushita Electric Industrial Co., Ltd., Kadoma Integrierte Schaltung oder Platine mit einer Höckerelektrode und Verfahren zu Ihrer Herstellung
US7969021B2 (en) * 2000-09-18 2011-06-28 Nippon Steel Corporation Bonding wire for semiconductor device and method for producing the same
JP2004064033A (ja) * 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
JP4204359B2 (ja) 2002-03-26 2009-01-07 株式会社野毛電気工業 ボンディングワイヤーおよびそれを使用した集積回路デバイス
KR20090086448A (ko) * 2005-01-05 2009-08-12 신닛테츠 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
JP2006216929A (ja) * 2005-01-05 2006-08-17 Nippon Steel Corp 半導体装置用ボンディングワイヤ
AT504250A2 (de) * 2005-06-30 2008-04-15 Fairchild Semiconductor Halbleiterchip-packung und verfahren zur herstellung derselben
JP2007123303A (ja) * 2005-10-25 2007-05-17 Nec Electronics Corp 半導体装置
US7476597B2 (en) * 2006-07-10 2009-01-13 Texas Instruments Incorporated Methods and systems for laser assisted wirebonding
US8610291B2 (en) * 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
US20090085207A1 (en) * 2007-09-28 2009-04-02 Texas Instruments, Inc. Ball grid array substrate package and solder pad

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US20040245320A1 (en) * 2001-10-23 2004-12-09 Mesato Fukagaya Bonding wire
JP2006190763A (ja) * 2005-01-05 2006-07-20 Nippon Steel Corp 半導体装置用ボンディングワイヤ

Also Published As

Publication number Publication date
KR20090101346A (ko) 2009-09-25
TW200839909A (en) 2008-10-01
JP5572121B2 (ja) 2014-08-13
WO2008087922A1 (ja) 2008-07-24
KR101280668B1 (ko) 2013-07-01
JPWO2008087922A1 (ja) 2010-05-06
JP2011146754A (ja) 2011-07-28
JP4941901B2 (ja) 2012-05-30
US20100213619A1 (en) 2010-08-26
US8247911B2 (en) 2012-08-21

Similar Documents

Publication Publication Date Title
TWI427719B (zh) The joint structure of the joining wire and its forming method
JP6706280B2 (ja) 半導体装置用ボンディングワイヤ
TWI517271B (zh) Copper bonding wire for semiconductor and its joining structure
JP4672373B2 (ja) 半導体装置用ボンディングワイヤ
JP2011146754A5 (enExample)
TWI812853B (zh) 線接合構造、使用於該線接合構造的接合線及半導體裝置
TWI571888B (zh) Connection lines for semiconductor devices
JP6807426B2 (ja) 金被覆銀ボンディングワイヤとその製造方法、及び半導体装置とその製造方法
WO2006073206A9 (ja) 半導体装置用ボンディングワイヤ
CN102422404A (zh) 半导体用接合线
JP2016225610A (ja) 半導体装置用ボンディングワイヤ
JP6869920B2 (ja) ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法
JP5985127B1 (ja) 半導体装置用ボンディングワイヤ
JP7684952B2 (ja) 半導体装置用ボンディングワイヤ
US20210280553A1 (en) Palladium-coated copper bonding wire and method for manufacturing same
TW202309302A (zh) 半導體裝置用接合線
WO2020162526A1 (ja) パラジウム被覆銅ボンディングワイヤ、ワイヤ接合構造、半導体装置及び半導体装置の製造方法
JP2007012776A (ja) 半導体装置用ボンディングワイヤ
JP2006216929A (ja) 半導体装置用ボンディングワイヤ
JP6869919B2 (ja) ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法
JP5393614B2 (ja) 半導体装置用ボンディングワイヤ
JP5591987B2 (ja) 半導体装置用ボンディングワイヤ
JP2010245574A (ja) 半導体装置用ボンディングワイヤ
JPWO2016189758A1 (ja) 半導体装置用ボンディングワイヤ
WO2025135010A1 (ja) ボンディングワイヤ

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees