JP4941901B2 - ボンディングワイヤの接合構造 - Google Patents

ボンディングワイヤの接合構造 Download PDF

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Publication number
JP4941901B2
JP4941901B2 JP2008554026A JP2008554026A JP4941901B2 JP 4941901 B2 JP4941901 B2 JP 4941901B2 JP 2008554026 A JP2008554026 A JP 2008554026A JP 2008554026 A JP2008554026 A JP 2008554026A JP 4941901 B2 JP4941901 B2 JP 4941901B2
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JP
Japan
Prior art keywords
bonding
wire
ball
layer
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008554026A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2008087922A1 (ja
Inventor
智裕 宇野
晋一 寺嶋
圭一 木村
隆 山田
景仁 西林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Micrometal Corp
Nippon Steel Chemical and Materials Co Ltd
Original Assignee
Nippon Steel Materials Co Ltd
Nippon Micrometal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Materials Co Ltd, Nippon Micrometal Corp filed Critical Nippon Steel Materials Co Ltd
Priority to JP2008554026A priority Critical patent/JP4941901B2/ja
Publication of JPWO2008087922A1 publication Critical patent/JPWO2008087922A1/ja
Application granted granted Critical
Publication of JP4941901B2 publication Critical patent/JP4941901B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H10W72/0711—
    • H10W72/015—
    • H10W72/075—
    • H10W72/50—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4382—Applying permanent coating, e.g. in-situ coating
    • H01L2224/43821—Spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H10W72/01515—
    • H10W72/01551—
    • H10W72/01565—
    • H10W72/07125—
    • H10W72/07141—
    • H10W72/07511—
    • H10W72/07521—
    • H10W72/07532—
    • H10W72/07533—
    • H10W72/07541—
    • H10W72/07552—
    • H10W72/521—
    • H10W72/522—
    • H10W72/536—
    • H10W72/543—
    • H10W72/552—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/5525—
    • H10W72/555—
    • H10W72/59—
    • H10W72/952—
    • H10W74/00—
    • H10W90/754—
    • H10W90/756—

Landscapes

  • Wire Bonding (AREA)
JP2008554026A 2007-01-15 2008-01-15 ボンディングワイヤの接合構造 Expired - Fee Related JP4941901B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008554026A JP4941901B2 (ja) 2007-01-15 2008-01-15 ボンディングワイヤの接合構造

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007006446 2007-01-15
JP2007006446 2007-01-15
JP2008554026A JP4941901B2 (ja) 2007-01-15 2008-01-15 ボンディングワイヤの接合構造
PCT/JP2008/050314 WO2008087922A1 (ja) 2007-01-15 2008-01-15 ボンディングワイヤの接合構造及びその形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011103829A Division JP5572121B2 (ja) 2007-01-15 2011-05-06 ボンディングワイヤの接合構造

Publications (2)

Publication Number Publication Date
JPWO2008087922A1 JPWO2008087922A1 (ja) 2010-05-06
JP4941901B2 true JP4941901B2 (ja) 2012-05-30

Family

ID=39635926

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008554026A Expired - Fee Related JP4941901B2 (ja) 2007-01-15 2008-01-15 ボンディングワイヤの接合構造
JP2011103829A Expired - Fee Related JP5572121B2 (ja) 2007-01-15 2011-05-06 ボンディングワイヤの接合構造

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011103829A Expired - Fee Related JP5572121B2 (ja) 2007-01-15 2011-05-06 ボンディングワイヤの接合構造

Country Status (5)

Country Link
US (1) US8247911B2 (enExample)
JP (2) JP4941901B2 (enExample)
KR (1) KR101280668B1 (enExample)
TW (1) TWI427719B (enExample)
WO (1) WO2008087922A1 (enExample)

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* Cited by examiner, † Cited by third party
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US9331049B2 (en) * 2008-07-11 2016-05-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding structure of bonding wire
JP5109881B2 (ja) * 2008-09-04 2012-12-26 住友金属鉱山株式会社 銅ボンディングワイヤ
DE102008054077B4 (de) * 2008-10-31 2021-04-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren und Vorrichtung zur Herstellung von Bonddrähten auf der Grundlage mikroelektronischer Herstellungstechniken
US20120153444A1 (en) * 2009-06-18 2012-06-21 Rohm Co., Ltd Semiconductor device
JPWO2010147187A1 (ja) 2009-06-18 2012-12-06 ローム株式会社 半導体装置
JP5550369B2 (ja) 2010-02-03 2014-07-16 新日鉄住金マテリアルズ株式会社 半導体用銅ボンディングワイヤとその接合構造
JP5519419B2 (ja) * 2010-06-14 2014-06-11 田中電子工業株式会社 高温半導体素子用平角状パラジウム（Ｐｄ）又は白金（Ｐｔ）被覆銅リボン
US20120001336A1 (en) * 2010-07-02 2012-01-05 Texas Instruments Incorporated Corrosion-resistant copper-to-aluminum bonds
JP5087795B2 (ja) * 2010-08-30 2012-12-05 住友金属鉱山株式会社 ボンディングワイヤ
JP5616739B2 (ja) 2010-10-01 2014-10-29 新日鉄住金マテリアルズ株式会社 複層銅ボンディングワイヤの接合構造
US9086553B2 (en) 2011-06-27 2015-07-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Optical communications device having electrical bond pads that are protected by a protective coating, and a method for applying the protective coating
JP6307832B2 (ja) * 2013-01-22 2018-04-11 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール
US9343422B2 (en) 2014-03-31 2016-05-17 Freescale Semiconductor, Inc. Structure for aluminum pad metal under ball bond
US9368470B2 (en) 2014-10-31 2016-06-14 Freescale Semiconductor, Inc. Coated bonding wire and methods for bonding using same
JP6467281B2 (ja) * 2015-04-30 2019-02-13 日鉄マイクロメタル株式会社 ボンディングワイヤのボール形成方法
JP6002300B1 (ja) 2015-09-02 2016-10-05 田中電子工業株式会社 ボールボンディング用パラジウム（Ｐｄ）被覆銅ワイヤ
JP6047214B1 (ja) * 2015-11-02 2016-12-21 田中電子工業株式会社 ボールボンディング用貴金属被覆銅ワイヤ
JP6354744B2 (ja) 2015-12-21 2018-07-11 トヨタ自動車株式会社 銅線の接合方法
JP6507329B1 (ja) * 2019-02-08 2019-04-24 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ、ワイヤ接合構造、半導体装置及び半導体装置の製造方法
WO2020183748A1 (ja) 2019-03-12 2020-09-17 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ、パラジウム被覆銅ボンディングワイヤの製造方法、及びこれを用いたワイヤ接合構造、半導体装置並びにその製造方法
WO2022162716A1 (ja) * 2021-01-26 2022-08-04 株式会社新川 ワイヤボンディング装置、ワイヤボンディング装置の制御方法およびワイヤボンディング装置の制御プログラム
TWI834171B (zh) * 2022-05-19 2024-03-01 日商新川股份有限公司 打線接合裝置、維護方法以及程式
CN116690399B (zh) * 2023-08-07 2023-09-26 烟台一诺电子材料有限公司 一种键合丝抛光涂层一体化装置

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Also Published As

Publication number Publication date
KR20090101346A (ko) 2009-09-25
TW200839909A (en) 2008-10-01
JP5572121B2 (ja) 2014-08-13
WO2008087922A1 (ja) 2008-07-24
KR101280668B1 (ko) 2013-07-01
JPWO2008087922A1 (ja) 2010-05-06
JP2011146754A (ja) 2011-07-28
US20100213619A1 (en) 2010-08-26
TWI427719B (zh) 2014-02-21
US8247911B2 (en) 2012-08-21

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