WO2008087922A1 - ボンディングワイヤの接合構造及びその形成方法 - Google Patents

ボンディングワイヤの接合構造及びその形成方法 Download PDF

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Publication number
WO2008087922A1
WO2008087922A1 PCT/JP2008/050314 JP2008050314W WO2008087922A1 WO 2008087922 A1 WO2008087922 A1 WO 2008087922A1 JP 2008050314 W JP2008050314 W JP 2008050314W WO 2008087922 A1 WO2008087922 A1 WO 2008087922A1
Authority
WO
WIPO (PCT)
Prior art keywords
bonding
ball
section
conductive metal
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/050314
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Tomohiro Uno
Shinichi Terashima
Keiichi Kimura
Takashi Yamada
Akihito NISHIBAYASHI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Micrometal Corp
Nippon Steel Chemical and Materials Co Ltd
Original Assignee
Nippon Steel Materials Co Ltd
Nippon Micrometal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Materials Co Ltd, Nippon Micrometal Corp filed Critical Nippon Steel Materials Co Ltd
Priority to US12/445,789 priority Critical patent/US8247911B2/en
Priority to KR1020097003941A priority patent/KR101280668B1/ko
Priority to JP2008554026A priority patent/JP4941901B2/ja
Priority to TW097101599A priority patent/TWI427719B/zh
Publication of WO2008087922A1 publication Critical patent/WO2008087922A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10W72/0711—
    • H10W72/015—
    • H10W72/075—
    • H10W72/50—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4382—Applying permanent coating, e.g. in-situ coating
    • H01L2224/43821—Spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H10W72/01515—
    • H10W72/01551—
    • H10W72/01565—
    • H10W72/07125—
    • H10W72/07141—
    • H10W72/07511—
    • H10W72/07521—
    • H10W72/07532—
    • H10W72/07533—
    • H10W72/07541—
    • H10W72/07552—
    • H10W72/521—
    • H10W72/522—
    • H10W72/536—
    • H10W72/543—
    • H10W72/552—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/5525—
    • H10W72/555—
    • H10W72/59—
    • H10W72/952—
    • H10W74/00—
    • H10W90/754—
    • H10W90/756—

Landscapes

  • Wire Bonding (AREA)
PCT/JP2008/050314 2007-01-15 2008-01-15 ボンディングワイヤの接合構造及びその形成方法 Ceased WO2008087922A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/445,789 US8247911B2 (en) 2007-01-15 2008-01-15 Wire bonding structure and method for forming same
KR1020097003941A KR101280668B1 (ko) 2007-01-15 2008-01-15 본딩 와이어의 접합 구조 및 그 형성 방법
JP2008554026A JP4941901B2 (ja) 2007-01-15 2008-01-15 ボンディングワイヤの接合構造
TW097101599A TWI427719B (zh) 2007-01-15 2008-01-15 The joint structure of the joining wire and its forming method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007006446 2007-01-15
JP2007-006446 2007-01-15

Publications (1)

Publication Number Publication Date
WO2008087922A1 true WO2008087922A1 (ja) 2008-07-24

Family

ID=39635926

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050314 Ceased WO2008087922A1 (ja) 2007-01-15 2008-01-15 ボンディングワイヤの接合構造及びその形成方法

Country Status (5)

Country Link
US (1) US8247911B2 (enExample)
JP (2) JP4941901B2 (enExample)
KR (1) KR101280668B1 (enExample)
TW (1) TWI427719B (enExample)
WO (1) WO2008087922A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062395A (ja) * 2008-09-04 2010-03-18 Sumitomo Metal Mining Co Ltd 銅ボンディングワイヤ
JP2012001746A (ja) * 2010-06-14 2012-01-05 Tanaka Electronics Ind Co Ltd 高温半導体素子用平角状パラジウム（Ｐｄ）又は白金（Ｐｔ）被覆銅リボン
JP2012049461A (ja) * 2010-08-30 2012-03-08 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
US8653668B2 (en) 2010-02-03 2014-02-18 Nippon Steel & Sumikin Materials Co., Ltd. Copper bonding wire for semiconductor device and bonding structure thereof
US8836147B2 (en) 2010-10-01 2014-09-16 Nippon Steel & Sumikin Materials Co., Ltd. Bonding structure of multilayer copper bonding wire
WO2016175040A1 (ja) * 2015-04-30 2016-11-03 日鉄住金マイクロメタル株式会社 ボンディングワイヤのボール形成方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9331049B2 (en) * 2008-07-11 2016-05-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding structure of bonding wire
DE102008054077B4 (de) * 2008-10-31 2021-04-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren und Vorrichtung zur Herstellung von Bonddrähten auf der Grundlage mikroelektronischer Herstellungstechniken
US20120153444A1 (en) * 2009-06-18 2012-06-21 Rohm Co., Ltd Semiconductor device
JPWO2010147187A1 (ja) 2009-06-18 2012-12-06 ローム株式会社 半導体装置
US20120001336A1 (en) * 2010-07-02 2012-01-05 Texas Instruments Incorporated Corrosion-resistant copper-to-aluminum bonds
US9086553B2 (en) 2011-06-27 2015-07-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Optical communications device having electrical bond pads that are protected by a protective coating, and a method for applying the protective coating
JP6307832B2 (ja) * 2013-01-22 2018-04-11 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール
US9343422B2 (en) 2014-03-31 2016-05-17 Freescale Semiconductor, Inc. Structure for aluminum pad metal under ball bond
US9368470B2 (en) 2014-10-31 2016-06-14 Freescale Semiconductor, Inc. Coated bonding wire and methods for bonding using same
JP6002300B1 (ja) 2015-09-02 2016-10-05 田中電子工業株式会社 ボールボンディング用パラジウム（Ｐｄ）被覆銅ワイヤ
JP6047214B1 (ja) * 2015-11-02 2016-12-21 田中電子工業株式会社 ボールボンディング用貴金属被覆銅ワイヤ
JP6354744B2 (ja) 2015-12-21 2018-07-11 トヨタ自動車株式会社 銅線の接合方法
JP6507329B1 (ja) * 2019-02-08 2019-04-24 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ、ワイヤ接合構造、半導体装置及び半導体装置の製造方法
WO2020183748A1 (ja) 2019-03-12 2020-09-17 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ、パラジウム被覆銅ボンディングワイヤの製造方法、及びこれを用いたワイヤ接合構造、半導体装置並びにその製造方法
WO2022162716A1 (ja) * 2021-01-26 2022-08-04 株式会社新川 ワイヤボンディング装置、ワイヤボンディング装置の制御方法およびワイヤボンディング装置の制御プログラム
TWI834171B (zh) * 2022-05-19 2024-03-01 日商新川股份有限公司 打線接合裝置、維護方法以及程式
CN116690399B (zh) * 2023-08-07 2023-09-26 烟台一诺电子材料有限公司 一种键合丝抛光涂层一体化装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158247A (ja) * 1984-08-30 1986-03-25 Toshiba Corp ワイヤボンデイング方法
JPH0354837A (ja) * 1989-07-24 1991-03-08 Nippon Steel Corp ワイヤーボンディング方法
JP2004064033A (ja) * 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
JP2006190763A (ja) * 2005-01-05 2006-07-20 Nippon Steel Corp 半導体装置用ボンディングワイヤ

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994838A (ja) * 1982-11-24 1984-05-31 Nec Corp ワイヤボンデイング装置
JPS5994837A (ja) * 1982-11-24 1984-05-31 Nec Corp ワイヤボンデイング装置
JPS6152333A (ja) * 1984-08-21 1986-03-15 Toshiba Corp ボンデイングワイヤ−
JPS6199645A (ja) 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS6297360A (ja) 1985-10-24 1987-05-06 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用表面被覆高純度銅極細線
JPS6324660A (ja) 1986-07-17 1988-02-02 Toshiba Corp 半導体記憶装置およびその製造方法
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
DE69729759T2 (de) * 1996-10-01 2005-07-07 Matsushita Electric Industrial Co., Ltd., Kadoma Integrierte Schaltung oder Platine mit einer Höckerelektrode und Verfahren zu Ihrer Herstellung
US7969021B2 (en) * 2000-09-18 2011-06-28 Nippon Steel Corporation Bonding wire for semiconductor device and method for producing the same
US20040245320A1 (en) * 2001-10-23 2004-12-09 Mesato Fukagaya Bonding wire
JP4204359B2 (ja) 2002-03-26 2009-01-07 株式会社野毛電気工業 ボンディングワイヤーおよびそれを使用した集積回路デバイス
KR20090086448A (ko) * 2005-01-05 2009-08-12 신닛테츠 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
JP2006216929A (ja) * 2005-01-05 2006-08-17 Nippon Steel Corp 半導体装置用ボンディングワイヤ
AT504250A2 (de) * 2005-06-30 2008-04-15 Fairchild Semiconductor Halbleiterchip-packung und verfahren zur herstellung derselben
JP2007123303A (ja) * 2005-10-25 2007-05-17 Nec Electronics Corp 半導体装置
US7476597B2 (en) * 2006-07-10 2009-01-13 Texas Instruments Incorporated Methods and systems for laser assisted wirebonding
US8610291B2 (en) * 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
US20090085207A1 (en) * 2007-09-28 2009-04-02 Texas Instruments, Inc. Ball grid array substrate package and solder pad

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6158247A (ja) * 1984-08-30 1986-03-25 Toshiba Corp ワイヤボンデイング方法
JPH0354837A (ja) * 1989-07-24 1991-03-08 Nippon Steel Corp ワイヤーボンディング方法
JP2004064033A (ja) * 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc ボンディングワイヤー
JP2006190763A (ja) * 2005-01-05 2006-07-20 Nippon Steel Corp 半導体装置用ボンディングワイヤ

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062395A (ja) * 2008-09-04 2010-03-18 Sumitomo Metal Mining Co Ltd 銅ボンディングワイヤ
US8653668B2 (en) 2010-02-03 2014-02-18 Nippon Steel & Sumikin Materials Co., Ltd. Copper bonding wire for semiconductor device and bonding structure thereof
JP2012001746A (ja) * 2010-06-14 2012-01-05 Tanaka Electronics Ind Co Ltd 高温半導体素子用平角状パラジウム（Ｐｄ）又は白金（Ｐｔ）被覆銅リボン
JP2012049461A (ja) * 2010-08-30 2012-03-08 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
US8836147B2 (en) 2010-10-01 2014-09-16 Nippon Steel & Sumikin Materials Co., Ltd. Bonding structure of multilayer copper bonding wire
WO2016175040A1 (ja) * 2015-04-30 2016-11-03 日鉄住金マイクロメタル株式会社 ボンディングワイヤのボール形成方法
JP2016213249A (ja) * 2015-04-30 2016-12-15 日鉄住金マイクロメタル株式会社 ボンディングワイヤのボール形成方法
US10121764B2 (en) 2015-04-30 2018-11-06 Nippon Micrometal Corporation Method for forming ball in bonding wire
TWI704627B (zh) * 2015-04-30 2020-09-11 日商日鐵化學材料股份有限公司 接合線之球形成方法

Also Published As

Publication number Publication date
KR20090101346A (ko) 2009-09-25
TW200839909A (en) 2008-10-01
JP5572121B2 (ja) 2014-08-13
KR101280668B1 (ko) 2013-07-01
JPWO2008087922A1 (ja) 2010-05-06
JP2011146754A (ja) 2011-07-28
JP4941901B2 (ja) 2012-05-30
US20100213619A1 (en) 2010-08-26
TWI427719B (zh) 2014-02-21
US8247911B2 (en) 2012-08-21

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