KR101280668B1 - 본딩 와이어의 접합 구조 및 그 형성 방법 - Google Patents

본딩 와이어의 접합 구조 및 그 형성 방법 Download PDF

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KR101280668B1
KR101280668B1 KR1020097003941A KR20097003941A KR101280668B1 KR 101280668 B1 KR101280668 B1 KR 101280668B1 KR 1020097003941 A KR1020097003941 A KR 1020097003941A KR 20097003941 A KR20097003941 A KR 20097003941A KR 101280668 B1 KR101280668 B1 KR 101280668B1
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South Korea
Prior art keywords
bonding
bonding wire
layer
wire
copper
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Expired - Fee Related
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KR1020097003941A
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English (en)
Korean (ko)
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KR20090101346A (ko
Inventor
도모히로 우노
시니치 데라시마
게이이치 기무라
다카시 야마다
아키히토 니시바야시
Original Assignee
닛데쓰스미킹 마이크로 메탈 가부시키가이샤
신닛테츠스미킹 마테리알즈 가부시키가이샤
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Application filed by 닛데쓰스미킹 마이크로 메탈 가부시키가이샤, 신닛테츠스미킹 마테리알즈 가부시키가이샤 filed Critical 닛데쓰스미킹 마이크로 메탈 가부시키가이샤
Publication of KR20090101346A publication Critical patent/KR20090101346A/ko
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Publication of KR101280668B1 publication Critical patent/KR101280668B1/ko
Expired - Fee Related legal-status Critical Current
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    • H10W72/0711—
    • H10W72/015—
    • H10W72/075—
    • H10W72/50—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4382—Applying permanent coating, e.g. in-situ coating
    • H01L2224/43821—Spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H10W72/01515—
    • H10W72/01551—
    • H10W72/01565—
    • H10W72/07125—
    • H10W72/07141—
    • H10W72/07511—
    • H10W72/07521—
    • H10W72/07532—
    • H10W72/07533—
    • H10W72/07541—
    • H10W72/07552—
    • H10W72/521—
    • H10W72/522—
    • H10W72/536—
    • H10W72/543—
    • H10W72/552—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/5525—
    • H10W72/555—
    • H10W72/59—
    • H10W72/952—
    • H10W74/00—
    • H10W90/754—
    • H10W90/756—

Landscapes

  • Wire Bonding (AREA)
KR1020097003941A 2007-01-15 2008-01-15 본딩 와이어의 접합 구조 및 그 형성 방법 Expired - Fee Related KR101280668B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007006446 2007-01-15
JPJP-P-2007-006446 2007-01-15
PCT/JP2008/050314 WO2008087922A1 (ja) 2007-01-15 2008-01-15 ボンディングワイヤの接合構造及びその形成方法

Publications (2)

Publication Number Publication Date
KR20090101346A KR20090101346A (ko) 2009-09-25
KR101280668B1 true KR101280668B1 (ko) 2013-07-01

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KR1020097003941A Expired - Fee Related KR101280668B1 (ko) 2007-01-15 2008-01-15 본딩 와이어의 접합 구조 및 그 형성 방법

Country Status (5)

Country Link
US (1) US8247911B2 (enExample)
JP (2) JP4941901B2 (enExample)
KR (1) KR101280668B1 (enExample)
TW (1) TWI427719B (enExample)
WO (1) WO2008087922A1 (enExample)

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US9331049B2 (en) * 2008-07-11 2016-05-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding structure of bonding wire
JP5109881B2 (ja) * 2008-09-04 2012-12-26 住友金属鉱山株式会社 銅ボンディングワイヤ
DE102008054077B4 (de) * 2008-10-31 2021-04-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren und Vorrichtung zur Herstellung von Bonddrähten auf der Grundlage mikroelektronischer Herstellungstechniken
US20120153444A1 (en) * 2009-06-18 2012-06-21 Rohm Co., Ltd Semiconductor device
JPWO2010147187A1 (ja) 2009-06-18 2012-12-06 ローム株式会社 半導体装置
JP5550369B2 (ja) 2010-02-03 2014-07-16 新日鉄住金マテリアルズ株式会社 半導体用銅ボンディングワイヤとその接合構造
JP5519419B2 (ja) * 2010-06-14 2014-06-11 田中電子工業株式会社 高温半導体素子用平角状パラジウム（Ｐｄ）又は白金（Ｐｔ）被覆銅リボン
US20120001336A1 (en) * 2010-07-02 2012-01-05 Texas Instruments Incorporated Corrosion-resistant copper-to-aluminum bonds
JP5087795B2 (ja) * 2010-08-30 2012-12-05 住友金属鉱山株式会社 ボンディングワイヤ
JP5616739B2 (ja) 2010-10-01 2014-10-29 新日鉄住金マテリアルズ株式会社 複層銅ボンディングワイヤの接合構造
US9086553B2 (en) 2011-06-27 2015-07-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Optical communications device having electrical bond pads that are protected by a protective coating, and a method for applying the protective coating
JP6307832B2 (ja) * 2013-01-22 2018-04-11 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール
US9343422B2 (en) 2014-03-31 2016-05-17 Freescale Semiconductor, Inc. Structure for aluminum pad metal under ball bond
US9368470B2 (en) 2014-10-31 2016-06-14 Freescale Semiconductor, Inc. Coated bonding wire and methods for bonding using same
JP6467281B2 (ja) * 2015-04-30 2019-02-13 日鉄マイクロメタル株式会社 ボンディングワイヤのボール形成方法
JP6002300B1 (ja) 2015-09-02 2016-10-05 田中電子工業株式会社 ボールボンディング用パラジウム（Ｐｄ）被覆銅ワイヤ
JP6047214B1 (ja) * 2015-11-02 2016-12-21 田中電子工業株式会社 ボールボンディング用貴金属被覆銅ワイヤ
JP6354744B2 (ja) 2015-12-21 2018-07-11 トヨタ自動車株式会社 銅線の接合方法
JP6507329B1 (ja) * 2019-02-08 2019-04-24 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ、ワイヤ接合構造、半導体装置及び半導体装置の製造方法
WO2020183748A1 (ja) 2019-03-12 2020-09-17 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ、パラジウム被覆銅ボンディングワイヤの製造方法、及びこれを用いたワイヤ接合構造、半導体装置並びにその製造方法
WO2022162716A1 (ja) * 2021-01-26 2022-08-04 株式会社新川 ワイヤボンディング装置、ワイヤボンディング装置の制御方法およびワイヤボンディング装置の制御プログラム
TWI834171B (zh) * 2022-05-19 2024-03-01 日商新川股份有限公司 打線接合裝置、維護方法以及程式
CN116690399B (zh) * 2023-08-07 2023-09-26 烟台一诺电子材料有限公司 一种键合丝抛光涂层一体化装置

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US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
JP2006190763A (ja) * 2005-01-05 2006-07-20 Nippon Steel Corp 半導体装置用ボンディングワイヤ

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JPS5994837A (ja) * 1982-11-24 1984-05-31 Nec Corp ワイヤボンデイング装置
JPS6152333A (ja) * 1984-08-21 1986-03-15 Toshiba Corp ボンデイングワイヤ−
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JPS6199645A (ja) 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS6297360A (ja) 1985-10-24 1987-05-06 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用表面被覆高純度銅極細線
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JP2007123303A (ja) * 2005-10-25 2007-05-17 Nec Electronics Corp 半導体装置
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US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
JP2006190763A (ja) * 2005-01-05 2006-07-20 Nippon Steel Corp 半導体装置用ボンディングワイヤ

Also Published As

Publication number Publication date
KR20090101346A (ko) 2009-09-25
TW200839909A (en) 2008-10-01
JP5572121B2 (ja) 2014-08-13
WO2008087922A1 (ja) 2008-07-24
JPWO2008087922A1 (ja) 2010-05-06
JP2011146754A (ja) 2011-07-28
JP4941901B2 (ja) 2012-05-30
US20100213619A1 (en) 2010-08-26
TWI427719B (zh) 2014-02-21
US8247911B2 (en) 2012-08-21

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