WO2016155965A3 - Kontaktanordnung und verfahren zu herstellung der kontaktanordnung - Google Patents

Kontaktanordnung und verfahren zu herstellung der kontaktanordnung Download PDF

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Publication number
WO2016155965A3
WO2016155965A3 PCT/EP2016/054278 EP2016054278W WO2016155965A3 WO 2016155965 A3 WO2016155965 A3 WO 2016155965A3 EP 2016054278 W EP2016054278 W EP 2016054278W WO 2016155965 A3 WO2016155965 A3 WO 2016155965A3
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WO
WIPO (PCT)
Prior art keywords
alloy
contact arrangement
electrical connection
bond
semiconductor component
Prior art date
Application number
PCT/EP2016/054278
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English (en)
French (fr)
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WO2016155965A2 (de
Inventor
Immanuel Mueller
Steffen Orso
Original Assignee
Robert Bosch Gmbh
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Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2016155965A2 publication Critical patent/WO2016155965A2/de
Publication of WO2016155965A3 publication Critical patent/WO2016155965A3/de

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Die Erfindung bezieht sich auf eine Kontaktanordnung zumindest eines Halbleiterbauelementes (10), insbesondere ein Leistungshalbleiterbauelement. Dabei weist ein elektrischer Anschluss (15.2) des Halbleiterbauelementes (10) eine Metallisierung aus Al oder einer Al-Legierung auf. Ferner ist der elektrische Anschluss mit zumindest einem Draht- oder Bändchenbond (40) aus Cu oder einer Cu-Legierung verbunden. Zwischen dem zumindest einen elektrischen Anschluss (15.2) und dem Draht- oder Bändchenbond (40) ist ein Kontaktelement (30) angeordnet, welches mit einer Unterseite (31) mit dem elektrischen Anschluss (15.2) und mit einer Oberseite (32) mit dem Draht- oder Bändchenbond (40) verbunden ist. Das Kontaktelement weist zudem zumindest zwei angrenzende Schichten (30.1, 30.2) auf, wobei die Unterseite (31) aus einer Schicht (30.1) aus Al oder einer Al-Legierung gebildet ist und das Kontaktelement (30) zumindest eine weitere Schicht (30.2) aus Cu oder einer Cu-Legierung, aus Ag- oder einer Ag-Legierung und/oder aus Ni oder einer Ni-Legierung umfasst.
PCT/EP2016/054278 2015-03-30 2016-03-01 Kontaktanordnung und verfahren zu herstellung der kontaktanordnung WO2016155965A2 (de)

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JP7075847B2 (ja) 2018-08-28 2022-05-26 株式会社 日立パワーデバイス 半導体装置および電力変換装置
DE102019130778A1 (de) 2018-11-29 2020-06-04 Infineon Technologies Ag Ein Package, welches ein Chip Kontaktelement aus zwei verschiedenen elektrisch leitfähigen Materialien aufweist
DE102021209486A1 (de) 2021-08-30 2023-03-02 Robert Bosch Gesellschaft mit beschränkter Haftung Elektronikanordnung und Verfahren zu deren Herstellung
DE102021209484A1 (de) 2021-08-30 2023-03-02 Robert Bosch Gesellschaft mit beschränkter Haftung Elektronikanordnung und Verfahren zu deren Herstellung
EP4224521A1 (de) * 2022-02-07 2023-08-09 Siemens Aktiengesellschaft Halbleiteranordnung mit einem halbleiterelement mit einem durch thermisches spritzen hergestellten kontaktierungselement sowie ein verfahren zur herstellung desselben
EP4369393A1 (de) * 2022-11-10 2024-05-15 Siemens Aktiengesellschaft Halbleiteranordnung mit einem schaltbaren halbleiterelement und verfahren zur herstellung derselben
DE102022213499A1 (de) 2022-12-13 2024-06-13 Robert Bosch Gesellschaft mit beschränkter Haftung Elektronikanordnung und Verfahren zum Ausbilden einer Elektronikanordnung

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