US8866298B2 - Bonded system with coated copper conductor - Google Patents

Bonded system with coated copper conductor Download PDF

Info

Publication number
US8866298B2
US8866298B2 US13/739,351 US201313739351A US8866298B2 US 8866298 B2 US8866298 B2 US 8866298B2 US 201313739351 A US201313739351 A US 201313739351A US 8866298 B2 US8866298 B2 US 8866298B2
Authority
US
United States
Prior art keywords
metal layer
copper
containing metal
aluminum
electrical conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US13/739,351
Other versions
US20140197539A1 (en
Inventor
Reinhold Bayerer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to US13/739,351 priority Critical patent/US8866298B2/en
Assigned to INFINEON TECHNOLOGIES AG reassignment INFINEON TECHNOLOGIES AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BAYERER, REINHOLD
Priority to DE102014200242.7A priority patent/DE102014200242B4/en
Priority to CN201410011722.7A priority patent/CN103928436A/en
Publication of US20140197539A1 publication Critical patent/US20140197539A1/en
Application granted granted Critical
Publication of US8866298B2 publication Critical patent/US8866298B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/745—Apparatus for manufacturing wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/03444—Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
    • H01L2224/0345—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/0346—Plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05575—Plural external layers
    • H01L2224/0558—Plural external layers being stacked
    • H01L2224/05582—Two-layer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05575—Plural external layers
    • H01L2224/0558—Plural external layers being stacked
    • H01L2224/05583—Three-layer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05575—Plural external layers
    • H01L2224/0558—Plural external layers being stacked
    • H01L2224/05584—Four-layer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45025—Plural core members
    • H01L2224/4503—Stacked arrangements
    • H01L2224/45032—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45155—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45298—Fillers
    • H01L2224/45399—Coating material
    • H01L2224/454—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45463—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/4547—Zirconium (Zr) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48744—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48747—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48755—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48764—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48847—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48855—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48863—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48864—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/745—Apparatus for manufacturing wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/749—Tools for reworking, e.g. for shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10252—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10272—Silicon Carbide [SiC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/1033—Gallium nitride [GaN]

Definitions

  • the present application relates to interconnect systems for semiconductor components, in particular copper-based interconnect systems for semiconductor components with standard aluminium metallization.
  • Interconnect systems which are generated by an ultrasonic bonding process, for surfaces of active power semiconductor dies typically include a heavy aluminium wire bonded to aluminium metallization disposed on the die surface, or a heavy copper wire bonded to copper metallization disposed on the die surface. Attempts have been made to bond aluminium-coated copper wires to power semiconductor dies which have standard aluminium metallization. However, due to the hard copper core of such wires they sink into the aluminium metallization of the die during the ultrasonic bonding process and damage the active device area below the aluminium metallization.
  • the embodiments described herein provide a copper-based interconnect system for semiconductor components with standard aluminium metallization.
  • the semiconductor components have at least one additional metal layer on the standard aluminum metallization layer which protects against extreme deformation of the underlying standard aluminum metallization during ultrasonic bonding of a coated copper-containing electrical conductor.
  • the component comprises a semiconductor die having a semiconductor device region, an aluminum-containing metal layer on the semiconductor device region, and at least one additional metal layer on the aluminum-containing metal layer which is harder than the aluminum-containing metal layer.
  • the semiconductor component further comprises a copper-containing electrical conductor bonded to the at least one additional metal layer of the semiconductor die via an electrically conductive coating of the copper-containing electrical conductor which is softer than the copper of the copper-containing electrical conductor.
  • the method comprises: providing a semiconductor die having a semiconductor device region, an aluminum-containing metal layer on the semiconductor device region, and at least one additional metal layer on the aluminum-containing metal layer which is harder than the aluminum-containing metal layer; and ultrasonically bonding a copper-containing electrical conductor to the at least one additional metal layer of the semiconductor die via an electrically conductive coating of the copper-containing electrical conductor which is softer than the copper of the copper-containing electrical conductor.
  • the component comprises a semiconductor die having a semiconductor device region, an aluminum-containing metal layer on the semiconductor device region, and at least one additional metal layer on the aluminum-containing metal layer.
  • the semiconductor component further comprises a copper-containing electrical conductor bonded to the at least one additional metal layer of the semiconductor die via an electrically conductive coating of the copper-containing electrical conductor which is softer than the copper of the copper-containing electrical conductor.
  • the at least one additional metal layer of the semiconductor die is hard enough to prevent significant deformation of the aluminum-containing metal layer of the semiconductor die when the copper-containing electrical conductor is bonded to the at least one additional metal layer of the semiconductor die.
  • FIG. 1 illustrates a front cross-sectional view of an embodiment of a semiconductor component with standard aluminium metallization ultrasonically bonded to a coated copper-containing electrical conductor.
  • FIG. 2 illustrates a side cross-sectional view of an embodiment of a semiconductor component with standard aluminium metallization ultrasonically bonded to a coated copper-containing electrical conductor.
  • FIG. 3 illustrates a side cross-sectional view of another embodiment of a semiconductor component with standard aluminium metallization ultrasonically bonded to a coated copper-containing electrical conductor.
  • FIG. 4 illustrates a side cross-sectional view of yet another embodiment of a semiconductor component with standard aluminium metallization ultrasonically bonded to a coated copper-containing electrical conductor.
  • FIG. 5 illustrates a side cross-sectional view of still another embodiment of a semiconductor component with standard aluminium metallization ultrasonically bonded to a coated copper-containing electrical conductor.
  • FIG. 6 illustrates an embodiment of a bonding tool for ultrasonically bonding a coated copper-containing electrical conductor to standard aluminium metallization of a semiconductor component.
  • FIG. 7 illustrates another embodiment of a bonding tool for ultrasonically bonding a coated copper-containing electrical conductor to standard aluminium metallization of a semiconductor component.
  • FIG. 1 illustrates a front cross-sectional view of an embodiment of a semiconductor component.
  • the semiconductor component includes a semiconductor die 100 having a semiconductor device region 102 , a standard aluminum-containing metal layer 104 such as Al, AlSi, AlSiCu, etc. on the semiconductor device region 102 , and at least one additional metal layer 106 on the aluminum-containing metal layer 104 .
  • the semiconductor device region 102 is a region of the die 100 in which active and/or passive devices such as transistors, diodes, resistors, capacitors, etc. can be formed.
  • the semiconductor device region 102 includes the semiconductor material in which the devices are formed, and can include a monocrystalline semiconductor such as Si or Ge, binary compounds such as GaN, GaAs, SiC, ternary compounds, etc.
  • One or more insulating layers such as oxides and/or nitrides can be disposed on the semiconductor material as part of the semiconductor device region 102 .
  • An optional barrier metal 108 such as TiN, TiW, W, Ti, etc. can be disposed between the semiconductor device region 102 and the aluminum-containing metal layer 104 .
  • the at least one additional metal layer 106 on the aluminum-containing metal layer 104 is harder than the aluminum-containing metal layer 104 to prevent damage during the subsequent copper interconnect ultrasonic bonding process.
  • four additional metal layers 110 , 112 , 114 , 116 are formed on the aluminum-containing metal layer 104 of the semiconductor die 100 , to protect the aluminum-containing metal layer 104 during the subsequent ultrasonic bonding process.
  • the lowermost layer 110 contains copper and is formed on the aluminum-containing metal layer 104 .
  • the next layer 112 contains nickel, e.g. Ni, NiP, NiMoP, and is formed on the copper-containing metal layer 110 .
  • the next layer 114 contains palladium and is formed on the nickel-containing metal layer 112 .
  • the last layer 116 contains gold and is formed on the palladium-containing metal layer 114 .
  • the additional layers 110 , 112 , 114 , 116 can be formed on the aluminum-containing metal layer 104 of the semiconductor die 100 by sputtering, plating, or other suitable conventional process.
  • the semiconductor component further includes a copper-containing electrical conductor 118 which includes a copper-containing core 120 and an electrically conductive coating 122 on the core 120 .
  • the copper-containing electrical conductor 118 is ultrasonically bonded to the at least one additional metal layer 106 of the semiconductor die 100 via the coating 122 on the core 120 of the copper-containing electrical conductor 118 .
  • the coating 122 comprises Al, Al alloy, Pd, Pd alloy, Ni, or Ni alloy.
  • the coating 122 comprises homogenous AlMg with a small amount of Mg e.g. AlMg0.1.
  • the coating 122 is softer than the copper of the copper-containing electrical conductor 118 so that the copper-containing electrical conductor 118 is ultrasonically bonded to the additional metal layer(s) 106 of the semiconductor die 100 via the coating 122 .
  • the additional metal layer(s) 106 of the semiconductor die 100 are hard enough to prevent significant deformation of the underlying aluminum-containing metal layer 104 when the copper-containing electrical conductor 118 is ultrasonically bonded to the at least one additional metal layer 106 of the semiconductor die 100 , by spreading the force from the copper-containing electrical conductor 118 over a larger area of the aluminum-containing metal layer 104 .
  • the term ‘significant’ as used herein means that some deformation of the underlying aluminum-containing metal layer 104 is acceptable and supports the ultrasonic bonding process. However, the aluminum-containing metal layer 104 is displaced by less than a predetermined amount under the copper-containing electrical conductor 118 to ensure integrity and reliability of the structure. As shown in FIG.
  • the additional metal layer(s) 106 of the semiconductor die 100 can be so hard that the bond wire core 120 is deformed when bonded to the at least one additional metal layer 106 of the semiconductor die 100 without significantly damaging the underlying aluminum-containing metal layer 104 .
  • FIG. 2 illustrates a side cross-sectional view of another embodiment of the semiconductor component.
  • the at least one additional metal layer 106 of the semiconductor die 100 includes three metal layers 110 , 112 , 114 formed on the aluminum-containing metal layer 104 instead of four layers.
  • the lowermost layer 110 contains copper and is formed on the aluminum-containing metal layer 104 .
  • the next layer 112 contains nickel, e.g. Ni, NiP, NiMoP, and is formed on the copper-containing metal layer 110 .
  • the last layer 114 contains palladium and is formed on the nickel-containing metal layer 112 .
  • the additional layers 106 can be formed on the aluminum-containing metal layer 104 of the semiconductor die by sputtering, plating, or other suitable conventional process, and protect the underlying aluminum-containing metal layer 104 from significant deformation during ultrasonic bonding of the copper-containing electrical conductor 118 .
  • the electrically conductive coating 122 is applied to all sides of the copper-containing electrical conductor core 120 as shown in FIG. 2 .
  • the copper-containing electrical conductor 118 has a thickness (t1) of at least 200 ⁇ m including the coating 122 .
  • the core 120 of the copper-containing electrical conductor 118 can have a thickness (t2) of at least 100 ⁇ m.
  • the coating 122 of the copper-containing electrical conductor 118 comprises Al and has a thickness (tc) of at least 50 ⁇ m.
  • the coating 122 comprises an Al alloy and has a thickness (tc) of at least 30 ⁇ m.
  • the coating 122 provides for ultrasonic bonding of the copper-containing electrical conductor 118 to the uppermost additional metal layer 114 of the semiconductor die 100 .
  • FIG. 3 illustrates a side cross-sectional view of yet another embodiment of the semiconductor component.
  • the copper-containing electrical conductor 118 is a ribbon and the electrically conductive coating 122 is applied only to the side of the copper-containing ribbon 118 facing the semiconductor die 100 .
  • FIG. 4 illustrates a side cross-sectional view of still another embodiment of the semiconductor component.
  • the at least one additional metal layer 106 of the semiconductor die 100 includes two metal layers 110 , 112 formed on the aluminum-containing metal layer 104 instead of three layers.
  • the bottom layer 110 contains copper and is formed on the aluminum-containing metal layer 104 .
  • the top layer 112 contains nickel, e.g. Ni, NiP, NiMoP, and is formed on the copper-containing metal layer 110 .
  • the bottom layer 110 contains nickel, e.g. Ni, NiP, NiMoP, and is formed on the aluminum-containing metal layer 104 .
  • the top layer 112 contains palladium and is formed on the copper-containing metal layer 110 .
  • the additional layers 110 , 112 can be formed by sputtering, plating, or other suitable conventional process, and protect the underlying aluminum-containing metal layer 104 from significant deformation during ultrasonic bonding of the copper-containing electrical conductor 118 .
  • FIG. 5 illustrates a side cross-sectional view of another embodiment of the semiconductor component.
  • the embodiment shown in FIG. 5 is similar to the one shown in FIG. 2 , however, the at least one additional metal layer 106 of the semiconductor die 100 includes a single metal layer 110 formed on the aluminum-containing metal layer 104 instead of three layers.
  • the single additional layer 110 contains copper or nickel (e.g. Ni, NiP, NiMoP) and is formed on the aluminum-containing metal layer 104 .
  • the single additional layer 110 can be formed by sputtering, plating, or other suitable conventional process, and protects the underlying aluminum-containing metal layer 104 from significant deformation during ultrasonic bonding of the copper-containing electrical conductor 118 .
  • FIG. 6 illustrates an embodiment of a V-shaped ultrasonic bonding tool 200 for ultrasonically bonding the copper-containing electrical conductor 118 to the at least one additional metal layer 106 formed on the aluminum-containing metal layer 104 of the semiconductor die 100 .
  • the semiconductor die 100 is provided with the semiconductor device region 102 , the aluminum-containing metal layer 104 on the semiconductor device region 102 , and the at least one additional metal layer 106 on the aluminum-containing metal layer 104 which is harder than the aluminum-containing metal layer 104 .
  • the V-shaped bonding tool 200 bonds the copper-containing electrical conductor 118 to the at least one additional metal layer 106 of the semiconductor die 100 via the electrically conductive coating 122 of the copper-containing electrical conductor 118 .
  • the softer coating 122 of the copper-containing electrical conductor 118 bonds to the at least one additional metal layer 106 formed on the aluminum-containing metal layer 104 of the semiconductor die 100 e.g. optionally under elevated temperature and always under pressure and with ultrasonic vibrations.
  • the copper-containing electrical conductor 118 is pressed against the uppermost layer of the at least one additional metal layer 106 by the V-shaped bonding tool 200 .
  • the resulting V-shape of the copper-containing electrical conductor 118 at the bonding region is a consequence of pressure and ultrasonic vibration applied through the V-shaped bonding tool 200 .
  • the copper-containing electrical conductor 118 becomes deformed this way.
  • FIG. 7 illustrates an embodiment of a U-shaped ultrasonic bonding tool 300 for bonding the copper-containing electrical conductor 118 to the at least one additional metal layer 106 formed on the aluminum-containing metal layer 104 of the semiconductor die 100 .
  • the embodiment shown in FIG. 7 is similar to the one shown in FIG. 6 , however the copper-containing electrical conductor 118 is pressed against the uppermost layer of the at least one additional metal layer 106 with the U-shaped bonding tool 300 instead of a V-shaped bonding tool, yielding a U-shaped cross-section bond instead of a V-shaped cross-section bond.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A semiconductor component includes a semiconductor die and a copper-containing electrical conductor. The semiconductor die has a semiconductor device region, an aluminum-containing metal layer on the semiconductor device region, and at least one additional metal layer on the aluminum-containing metal layer which is harder than the aluminum-containing metal layer. The copper-containing electrical conductor is bonded to the at least one additional metal layer of the semiconductor die via an electrically conductive coating of the copper-containing electrical conductor which is softer than the copper of the copper-containing electrical conductor.

Description

TECHNICAL FIELD
The present application relates to interconnect systems for semiconductor components, in particular copper-based interconnect systems for semiconductor components with standard aluminium metallization.
BACKGROUND
Interconnect systems, which are generated by an ultrasonic bonding process, for surfaces of active power semiconductor dies typically include a heavy aluminium wire bonded to aluminium metallization disposed on the die surface, or a heavy copper wire bonded to copper metallization disposed on the die surface. Attempts have been made to bond aluminium-coated copper wires to power semiconductor dies which have standard aluminium metallization. However, due to the hard copper core of such wires they sink into the aluminium metallization of the die during the ultrasonic bonding process and damage the active device area below the aluminium metallization.
SUMMARY
The embodiments described herein provide a copper-based interconnect system for semiconductor components with standard aluminium metallization. The semiconductor components have at least one additional metal layer on the standard aluminum metallization layer which protects against extreme deformation of the underlying standard aluminum metallization during ultrasonic bonding of a coated copper-containing electrical conductor.
According to an embodiment of a semiconductor component, the component comprises a semiconductor die having a semiconductor device region, an aluminum-containing metal layer on the semiconductor device region, and at least one additional metal layer on the aluminum-containing metal layer which is harder than the aluminum-containing metal layer. The semiconductor component further comprises a copper-containing electrical conductor bonded to the at least one additional metal layer of the semiconductor die via an electrically conductive coating of the copper-containing electrical conductor which is softer than the copper of the copper-containing electrical conductor.
According to an embodiment of a method of manufacturing a semiconductor component, the method comprises: providing a semiconductor die having a semiconductor device region, an aluminum-containing metal layer on the semiconductor device region, and at least one additional metal layer on the aluminum-containing metal layer which is harder than the aluminum-containing metal layer; and ultrasonically bonding a copper-containing electrical conductor to the at least one additional metal layer of the semiconductor die via an electrically conductive coating of the copper-containing electrical conductor which is softer than the copper of the copper-containing electrical conductor.
According to yet another embodiment of a semiconductor component, the component comprises a semiconductor die having a semiconductor device region, an aluminum-containing metal layer on the semiconductor device region, and at least one additional metal layer on the aluminum-containing metal layer. The semiconductor component further comprises a copper-containing electrical conductor bonded to the at least one additional metal layer of the semiconductor die via an electrically conductive coating of the copper-containing electrical conductor which is softer than the copper of the copper-containing electrical conductor. The at least one additional metal layer of the semiconductor die is hard enough to prevent significant deformation of the aluminum-containing metal layer of the semiconductor die when the copper-containing electrical conductor is bonded to the at least one additional metal layer of the semiconductor die.
Those skilled in the art will recognize additional features and advantages upon reading the following detailed description, and upon viewing the accompanying drawings.
BRIEF DESCRIPTION OF THE FIGURES
The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding similar parts. The features of the various illustrated embodiments can be combined unless they exclude each other. Embodiments are depicted in the drawings and are detailed in the description which follows.
FIG. 1 illustrates a front cross-sectional view of an embodiment of a semiconductor component with standard aluminium metallization ultrasonically bonded to a coated copper-containing electrical conductor.
FIG. 2 illustrates a side cross-sectional view of an embodiment of a semiconductor component with standard aluminium metallization ultrasonically bonded to a coated copper-containing electrical conductor.
FIG. 3 illustrates a side cross-sectional view of another embodiment of a semiconductor component with standard aluminium metallization ultrasonically bonded to a coated copper-containing electrical conductor.
FIG. 4 illustrates a side cross-sectional view of yet another embodiment of a semiconductor component with standard aluminium metallization ultrasonically bonded to a coated copper-containing electrical conductor.
FIG. 5 illustrates a side cross-sectional view of still another embodiment of a semiconductor component with standard aluminium metallization ultrasonically bonded to a coated copper-containing electrical conductor.
FIG. 6 illustrates an embodiment of a bonding tool for ultrasonically bonding a coated copper-containing electrical conductor to standard aluminium metallization of a semiconductor component.
FIG. 7 illustrates another embodiment of a bonding tool for ultrasonically bonding a coated copper-containing electrical conductor to standard aluminium metallization of a semiconductor component.
 DETAILED DESCRIPTION
FIG. 1 illustrates a front cross-sectional view of an embodiment of a semiconductor component. The semiconductor component includes a semiconductor die 100 having a semiconductor device region 102, a standard aluminum-containing metal layer 104 such as Al, AlSi, AlSiCu, etc. on the semiconductor device region 102, and at least one additional metal layer 106 on the aluminum-containing metal layer 104. The semiconductor device region 102 is a region of the die 100 in which active and/or passive devices such as transistors, diodes, resistors, capacitors, etc. can be formed. The semiconductor device region 102 includes the semiconductor material in which the devices are formed, and can include a monocrystalline semiconductor such as Si or Ge, binary compounds such as GaN, GaAs, SiC, ternary compounds, etc. One or more insulating layers such as oxides and/or nitrides can be disposed on the semiconductor material as part of the semiconductor device region 102. An optional barrier metal 108 such as TiN, TiW, W, Ti, etc. can be disposed between the semiconductor device region 102 and the aluminum-containing metal layer 104. In either case, the at least one additional metal layer 106 on the aluminum-containing metal layer 104 is harder than the aluminum-containing metal layer 104 to prevent damage during the subsequent copper interconnect ultrasonic bonding process.
According to the embodiment illustrated in FIG. 1, four additional metal layers 110, 112, 114, 116 are formed on the aluminum-containing metal layer 104 of the semiconductor die 100, to protect the aluminum-containing metal layer 104 during the subsequent ultrasonic bonding process. The lowermost layer 110 contains copper and is formed on the aluminum-containing metal layer 104. The next layer 112 contains nickel, e.g. Ni, NiP, NiMoP, and is formed on the copper-containing metal layer 110. The next layer 114 contains palladium and is formed on the nickel-containing metal layer 112. The last layer 116 contains gold and is formed on the palladium-containing metal layer 114. The additional layers 110, 112, 114, 116 can be formed on the aluminum-containing metal layer 104 of the semiconductor die 100 by sputtering, plating, or other suitable conventional process.
The semiconductor component further includes a copper-containing electrical conductor 118 which includes a copper-containing core 120 and an electrically conductive coating 122 on the core 120. The copper-containing electrical conductor 118 is ultrasonically bonded to the at least one additional metal layer 106 of the semiconductor die 100 via the coating 122 on the core 120 of the copper-containing electrical conductor 118. In some embodiments, the coating 122 comprises Al, Al alloy, Pd, Pd alloy, Ni, or Ni alloy. In one specific embodiment, the coating 122 comprises homogenous AlMg with a small amount of Mg e.g. AlMg0.1. In general, the coating 122 is softer than the copper of the copper-containing electrical conductor 118 so that the copper-containing electrical conductor 118 is ultrasonically bonded to the additional metal layer(s) 106 of the semiconductor die 100 via the coating 122.
The additional metal layer(s) 106 of the semiconductor die 100 are hard enough to prevent significant deformation of the underlying aluminum-containing metal layer 104 when the copper-containing electrical conductor 118 is ultrasonically bonded to the at least one additional metal layer 106 of the semiconductor die 100, by spreading the force from the copper-containing electrical conductor 118 over a larger area of the aluminum-containing metal layer 104. The term ‘significant’ as used herein means that some deformation of the underlying aluminum-containing metal layer 104 is acceptable and supports the ultrasonic bonding process. However, the aluminum-containing metal layer 104 is displaced by less than a predetermined amount under the copper-containing electrical conductor 118 to ensure integrity and reliability of the structure. As shown in FIG. 1 where the core 120 of the copper-containing electrical conductor 118 is a bond wire, the additional metal layer(s) 106 of the semiconductor die 100 can be so hard that the bond wire core 120 is deformed when bonded to the at least one additional metal layer 106 of the semiconductor die 100 without significantly damaging the underlying aluminum-containing metal layer 104.
FIG. 2 illustrates a side cross-sectional view of another embodiment of the semiconductor component. The embodiment shown in FIG. 2 is similar to the one shown in FIG. 1, however, the at least one additional metal layer 106 of the semiconductor die 100 includes three metal layers 110, 112, 114 formed on the aluminum-containing metal layer 104 instead of four layers. According to this embodiment, the lowermost layer 110 contains copper and is formed on the aluminum-containing metal layer 104. The next layer 112 contains nickel, e.g. Ni, NiP, NiMoP, and is formed on the copper-containing metal layer 110. The last layer 114 contains palladium and is formed on the nickel-containing metal layer 112. The additional layers 106 can be formed on the aluminum-containing metal layer 104 of the semiconductor die by sputtering, plating, or other suitable conventional process, and protect the underlying aluminum-containing metal layer 104 from significant deformation during ultrasonic bonding of the copper-containing electrical conductor 118.
Further according to this embodiment, the electrically conductive coating 122 is applied to all sides of the copper-containing electrical conductor core 120 as shown in FIG. 2. In one case, the copper-containing electrical conductor 118 has a thickness (t1) of at least 200 μm including the coating 122. The core 120 of the copper-containing electrical conductor 118 can have a thickness (t2) of at least 100 μm. In one embodiment, the coating 122 of the copper-containing electrical conductor 118 comprises Al and has a thickness (tc) of at least 50 μm. In another embodiment, the coating 122 comprises an Al alloy and has a thickness (tc) of at least 30 μm. In each case, the coating 122 provides for ultrasonic bonding of the copper-containing electrical conductor 118 to the uppermost additional metal layer 114 of the semiconductor die 100.
FIG. 3 illustrates a side cross-sectional view of yet another embodiment of the semiconductor component. According to this embodiment, the copper-containing electrical conductor 118 is a ribbon and the electrically conductive coating 122 is applied only to the side of the copper-containing ribbon 118 facing the semiconductor die 100.
FIG. 4 illustrates a side cross-sectional view of still another embodiment of the semiconductor component. The embodiment shown in FIG. 4 is similar to the one shown in FIG. 3, however, the at least one additional metal layer 106 of the semiconductor die 100 includes two metal layers 110, 112 formed on the aluminum-containing metal layer 104 instead of three layers. In one case, the bottom layer 110 contains copper and is formed on the aluminum-containing metal layer 104. The top layer 112 contains nickel, e.g. Ni, NiP, NiMoP, and is formed on the copper-containing metal layer 110. In another case, the bottom layer 110 contains nickel, e.g. Ni, NiP, NiMoP, and is formed on the aluminum-containing metal layer 104. The top layer 112 contains palladium and is formed on the copper-containing metal layer 110. In each case, the additional layers 110, 112 can be formed by sputtering, plating, or other suitable conventional process, and protect the underlying aluminum-containing metal layer 104 from significant deformation during ultrasonic bonding of the copper-containing electrical conductor 118.
FIG. 5 illustrates a side cross-sectional view of another embodiment of the semiconductor component. The embodiment shown in FIG. 5 is similar to the one shown in FIG. 2, however, the at least one additional metal layer 106 of the semiconductor die 100 includes a single metal layer 110 formed on the aluminum-containing metal layer 104 instead of three layers. The single additional layer 110 contains copper or nickel (e.g. Ni, NiP, NiMoP) and is formed on the aluminum-containing metal layer 104. The single additional layer 110 can be formed by sputtering, plating, or other suitable conventional process, and protects the underlying aluminum-containing metal layer 104 from significant deformation during ultrasonic bonding of the copper-containing electrical conductor 118.
FIG. 6 illustrates an embodiment of a V-shaped ultrasonic bonding tool 200 for ultrasonically bonding the copper-containing electrical conductor 118 to the at least one additional metal layer 106 formed on the aluminum-containing metal layer 104 of the semiconductor die 100. The semiconductor die 100 is provided with the semiconductor device region 102, the aluminum-containing metal layer 104 on the semiconductor device region 102, and the at least one additional metal layer 106 on the aluminum-containing metal layer 104 which is harder than the aluminum-containing metal layer 104. The V-shaped bonding tool 200 bonds the copper-containing electrical conductor 118 to the at least one additional metal layer 106 of the semiconductor die 100 via the electrically conductive coating 122 of the copper-containing electrical conductor 118. The softer coating 122 of the copper-containing electrical conductor 118 bonds to the at least one additional metal layer 106 formed on the aluminum-containing metal layer 104 of the semiconductor die 100 e.g. optionally under elevated temperature and always under pressure and with ultrasonic vibrations. The copper-containing electrical conductor 118 is pressed against the uppermost layer of the at least one additional metal layer 106 by the V-shaped bonding tool 200. The resulting V-shape of the copper-containing electrical conductor 118 at the bonding region is a consequence of pressure and ultrasonic vibration applied through the V-shaped bonding tool 200. During the ultrasonic bonding process, the copper-containing electrical conductor 118 becomes deformed this way.
FIG. 7 illustrates an embodiment of a U-shaped ultrasonic bonding tool 300 for bonding the copper-containing electrical conductor 118 to the at least one additional metal layer 106 formed on the aluminum-containing metal layer 104 of the semiconductor die 100. The embodiment shown in FIG. 7 is similar to the one shown in FIG. 6, however the copper-containing electrical conductor 118 is pressed against the uppermost layer of the at least one additional metal layer 106 with the U-shaped bonding tool 300 instead of a V-shaped bonding tool, yielding a U-shaped cross-section bond instead of a V-shaped cross-section bond.
Terms such as “first”, “second”, and the like, are used to describe various elements, regions, sections, etc. and are also not intended to be limiting. Like terms refer to like elements throughout the description.
As used herein, the terms “having”, “containing”, “including”, “comprising” and the like are open ended terms that indicate the presence of stated elements or features, but do not preclude additional elements or features. The articles “a”, “an” and “the” are intended to include the plural as well as the singular, unless the context clearly indicates otherwise.
It is to be understood that the features of the various embodiments described herein may be combined with each other, unless specifically noted otherwise.
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that a variety of alternate and/or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, it is intended that this invention be limited only by the claims and the equivalents thereof.

Claims (22)

What is claimed is:
1. A semiconductor component, comprising:
a semiconductor die having a semiconductor device region, an aluminum-containing metal layer on the semiconductor device region, and at least one additional metal layer on the aluminum-containing metal layer which is harder than the aluminum-containing metal layer; and
a copper-containing electrical conductor bonded to the at least one additional metal layer of the semiconductor die via an electrically conductive coating of the copper-containing electrical conductor which is softer than the copper of the copper-containing electrical conductor.
2. The semiconductor component according to claim 1, wherein the coating of the copper-containing electrical conductor comprises a material selected from the group consisting of Al, Al alloy, Pd, Pd alloy, Ni, and Ni alloy.
3. The semiconductor component according to claim 2, wherein the coating of the copper-containing electrical conductor comprises AlMg.
4. The semiconductor component according to claim 1, wherein the at least one additional metal layer of the semiconductor die comprises:
a copper-containing metal layer on the aluminum-containing metal layer; and
a nickel-containing metal layer on the copper-containing metal layer.
5. The semiconductor component according to claim 4, wherein the at least one additional metal layer of the semiconductor die further comprises a palladium-containing metal layer on the nickel-containing metal layer.
6. The semiconductor component according to claim 5, wherein the at least one additional metal layer of the semiconductor die further comprises a gold-containing metal layer on the palladium-containing metal layer.
7. The semiconductor component according to claim 1, wherein the at least one additional metal layer of the semiconductor die comprises:
a nickel-containing metal layer on the aluminum-containing metal layer; and
a palladium-containing metal layer on the nickel-containing metal layer.
8. The semiconductor component according to claim 1, wherein the at least one additional metal layer of the semiconductor die comprises a copper or nickel-containing metal layer on the aluminum-containing metal layer.
9. The semiconductor component according to claim 1, wherein the copper-containing electrical conductor has a thickness of at least 200 μm including the coating.
10. The semiconductor component according to claim 1, wherein the coating comprises Al and has a thickness of at least 50 μm.
11. The semiconductor component according to claim 1, wherein the coating comprises an Al alloy and has a thickness of at least 30 μm.
12. The semiconductor component according to claim 1, wherein the copper-containing electrical conductor has a U-shaped cross-section where bonded to the at least one additional metal layer of the semiconductor die.
13. The semiconductor component according to claim 1, wherein the coating is applied only to a side of the copper-containing electrical conductor facing the semiconductor die.
14. A method of manufacturing a semiconductor component, the method comprising:
providing a semiconductor die having a semiconductor device region, an aluminum-containing metal layer on the semiconductor device region, and at least one additional metal layer on the aluminum-containing metal layer which is harder than the aluminum-containing metal layer; and
ultrasonically bonding a copper-containing electrical conductor to the at least one additional metal layer of the semiconductor die via an electrically conductive coating of the copper-containing electrical conductor which is softer than the copper of the copper-containing electrical conductor.
15. The method according to claim 14, further comprising forming the at least one additional metal layer on the aluminum-containing metal layer by sputtering or plating:
a copper-containing metal layer on the aluminum-containing metal layer; and
a nickel-containing metal layer on the copper-containing metal layer.
16. The method according to claim 15, further comprising forming the at least one additional metal layer on the aluminum-containing metal layer by sputtering or plating a palladium-containing metal layer on the nickel-containing metal layer.
17. The method according to claim 16, further comprising forming the at least one additional metal layer on the aluminum-containing metal layer by sputtering or plating a gold-containing metal layer on the palladium-containing metal layer.
18. The method according to claim 14, further comprising forming the at least one additional metal layer on the aluminum-containing metal layer by sputtering or plating:
a nickel-containing metal layer on the aluminum-containing metal layer; and
a palladium-containing metal layer on the nickel-containing metal layer.
19. The method according to claim 14, further comprising forming the at least one additional metal layer on the aluminum-containing metal layer by sputtering or plating a copper or nickel-containing metal layer on the aluminum-containing metal layer.
20. The method according to claim 14, further comprising pressing the copper-containing electrical conductor against the at least one additional metal layer of the semiconductor die using a U-shaped bonding tool so that the copper-containing electrical conductor has a U-shaped cross-section where bonded to the at least one additional metal layer of the semiconductor die.
21. A semiconductor component, comprising:
a semiconductor die having a semiconductor device region, an aluminum-containing metal layer on the semiconductor device region, and at least one additional metal layer on the aluminum-containing metal layer;
a copper-containing electrical conductor bonded to the at least one additional metal layer of the semiconductor die via an electrically conductive coating of the copper-containing electrical conductor which is softer than the copper of the copper-containing electrical conductor; and
wherein the at least one additional metal layer of the semiconductor die is hard enough to prevent significant deformation of the aluminum-containing metal layer of the semiconductor die when the copper-containing electrical conductor is bonded to the at least one additional metal layer of the semiconductor die.
22. The semiconductor component according to claim 21, wherein the at least one additional metal layer of the semiconductor die is also hard enough so that the copper-containing electrical conductor is deformed when bonded to the at least one additional metal layer of the semiconductor die.
US13/739,351 2013-01-11 2013-01-11 Bonded system with coated copper conductor Active US8866298B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/739,351 US8866298B2 (en) 2013-01-11 2013-01-11 Bonded system with coated copper conductor
DE102014200242.7A DE102014200242B4 (en) 2013-01-11 2014-01-09 Bonded system with coated copper conductor
CN201410011722.7A CN103928436A (en) 2013-01-11 2014-01-10 Bonded System With Coated Copper Conductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/739,351 US8866298B2 (en) 2013-01-11 2013-01-11 Bonded system with coated copper conductor

Publications (2)

Publication Number Publication Date
US20140197539A1 US20140197539A1 (en) 2014-07-17
US8866298B2 true US8866298B2 (en) 2014-10-21

Family

ID=51015224

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/739,351 Active US8866298B2 (en) 2013-01-11 2013-01-11 Bonded system with coated copper conductor

Country Status (3)

Country Link
US (1) US8866298B2 (en)
CN (1) CN103928436A (en)
DE (1) DE102014200242B4 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014223352A1 (en) * 2014-11-17 2016-05-19 Robert Bosch Gmbh Connecting arrangement with a multilayer bond wire
DE102015205704B4 (en) * 2015-03-30 2024-07-11 Robert Bosch Gmbh Contact arrangement and method for producing the contact arrangement
DE102016117389B4 (en) 2015-11-20 2020-05-28 Semikron Elektronik Gmbh & Co. Kg Power semiconductor chip and method for producing a power semiconductor chip and power semiconductor device
JP6923745B2 (en) * 2018-03-26 2021-08-25 富士フイルム株式会社 Conductive film, touch panel sensor, touch panel
CN116134593A (en) * 2020-08-03 2023-05-16 三菱电机株式会社 Semiconductor device, method for manufacturing semiconductor device, and power conversion device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4078980A (en) * 1976-10-01 1978-03-14 National Semiconductor Corporation Electrolytic chromium etching of chromium-layered semiconductor
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US20080093729A1 (en) 2006-10-20 2008-04-24 Dirk Siepe Semiconductor arrangement, semiconductor module, and method for connecting a semiconductor chip to a ceramic substrate
US20130277825A1 (en) * 2012-04-18 2013-10-24 Texas Instruments Incorporated Method for Preventing Corrosion of Copper-Aluminum Intermetallic Compounds

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134460A (en) 1986-08-11 1992-07-28 International Business Machines Corporation Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding
WO1995002900A1 (en) * 1993-07-15 1995-01-26 Astarix, Inc. Aluminum-palladium alloy for initiation of electroless plating
US20050001316A1 (en) * 2003-07-01 2005-01-06 Motorola, Inc. Corrosion-resistant bond pad and integrated device
US7656045B2 (en) * 2006-02-23 2010-02-02 Freescale Semiconductor, Inc. Cap layer for an aluminum copper bond pad
DE102006023167B3 (en) 2006-05-17 2007-12-13 Infineon Technologies Ag Bonding wire, manufacturing method for a bonding wire and wedge-wedge wire bonding method
JP4349641B1 (en) 2009-03-23 2009-10-21 田中電子工業株式会社 Coated copper wire for ball bonding
US8836120B2 (en) * 2011-04-19 2014-09-16 Infineon Technologies Ag Semiconductor device with a layer including niobium, and/or tantalum overlying a contact pad or a metal layer
JP2013004781A (en) 2011-06-17 2013-01-07 Sanken Electric Co Ltd Semiconductor device and semiconductor device manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4078980A (en) * 1976-10-01 1978-03-14 National Semiconductor Corporation Electrolytic chromium etching of chromium-layered semiconductor
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US20080093729A1 (en) 2006-10-20 2008-04-24 Dirk Siepe Semiconductor arrangement, semiconductor module, and method for connecting a semiconductor chip to a ceramic substrate
US20130277825A1 (en) * 2012-04-18 2013-10-24 Texas Instruments Incorporated Method for Preventing Corrosion of Copper-Aluminum Intermetallic Compounds

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Ralf Schmidt et al. "Al-Clad CU Wire Bonds Multiply Power Cycling Lifetime of Advanced Power Modules." PCIM Europe 2012, May 8-10, 2012, Nuremburg. Paper 104, pp. 776-783.

Also Published As

Publication number Publication date
DE102014200242A1 (en) 2014-07-17
DE102014200242B4 (en) 2021-10-07
US20140197539A1 (en) 2014-07-17
CN103928436A (en) 2014-07-16

Similar Documents

Publication Publication Date Title
US11842975B2 (en) Electronic device with multi-layer contact and system
US8866298B2 (en) Bonded system with coated copper conductor
US20080242003A1 (en) Integrated circuit devices with integral heat sinks
US20070025684A1 (en) Connection Structure Semiconductor Chip and Electronic Component Including the Connection Structure and Methods for Producing the Connection Structure
TW201135890A (en) Semiconductor device and method for manufacturing semiconductor device
US9960130B2 (en) Reliable interconnect
CN206639796U (en) Semiconductor devices
US20120205812A1 (en) Patterns of passivation material on bond pads and methods of manufacture thereof
CN104681519A (en) Copper Ball Bond Interface Structure And Formation
US20150179599A1 (en) Die substrate assembly and method
US8786084B2 (en) Semiconductor package and method of forming
TWI534917B (en) Semiconductor device and production method thereof
US7811862B2 (en) Thermally enhanced electronic package
US10153241B2 (en) Semiconductor device and method of manufacturing the same
JP6354467B2 (en) Semiconductor device
US20160126216A1 (en) Method of forming an interconnection and arrangement for a direct interconnect chip assembly
WO2012053129A1 (en) Semiconductor device, and manufacturing method for same
US20100007004A1 (en) Wafer and semiconductor package
US10896889B2 (en) Multilayer clip structure attached to a chip
US9418920B2 (en) Integrated circuit (IC) package with thick die pad functioning as a heat sink
CN111834322A (en) Semiconductor package jig structure and semiconductor package including the same
JP6931869B2 (en) Semiconductor device
US20180218992A1 (en) Semiconductor Device, Method for Fabricating a Semiconductor Device and Method for Reinforcing a Die in a Semiconductor Device
JP6250788B2 (en) Semiconductor device
US20160043050A1 (en) Metallization stack and chip arrangement

Legal Events

Date Code Title Description
AS Assignment

Owner name: INFINEON TECHNOLOGIES AG, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:BAYERER, REINHOLD;REEL/FRAME:029613/0544

Effective date: 20130111

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551)

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8