JP2013004781A - Semiconductor device and semiconductor device manufacturing method - Google Patents

Semiconductor device and semiconductor device manufacturing method Download PDF

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JP2013004781A
JP2013004781A JP2011135117A JP2011135117A JP2013004781A JP 2013004781 A JP2013004781 A JP 2013004781A JP 2011135117 A JP2011135117 A JP 2011135117A JP 2011135117 A JP2011135117 A JP 2011135117A JP 2013004781 A JP2013004781 A JP 2013004781A
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semiconductor
electrode pad
palladium
bonding
plating layer
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Masanobu Sueishi
政信 末石
Tatsuya Kobayashi
達也 小林
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Sanken Electric Co Ltd
サンケン電気株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664Palladium (Pd) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624Aluminium (Al) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48817Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48824Aluminium (Al) as principal constituent
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

A semiconductor device and a method for manufacturing the semiconductor device in which a semiconductor element under an electrode pad is not damaged during bonding with a Cu wire.
A semiconductor device capable of being electrically connected by a bonding wire containing copper as a main component, comprising a semiconductor element, an electrode pad having a main component of aluminum disposed on the semiconductor element, and an electrode. Electroless nickel / palladium / gold plating layers 31, 32, and 33 are provided on the surface of the pad 20, with bonding wires connected to the surface.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor device having an electrode pad to which a bonding wire is connected and a method for manufacturing the semiconductor device.

  A bonding wire (hereinafter referred to as “Cu wire”) containing copper (Cu) as a main component is used as a connection member for electrical connection of a semiconductor device. The Cu wire is advantageous in that it is cheaper than the Au wire mainly composed of gold (Au).

  For this reason, various proposals have been made as bonding techniques using Cu wires. For example, in order to cope with a hard Cu wire, a method of adding Cu at a relatively high rate to an electrode pad mainly composed of aluminum (Al) has been proposed (for example, see Patent Document 1). By adding Cu to the electrode pad mainly composed of Al, the hardness of the electrode pad is increased. Thereby, it is possible to effectively receive the energy of impact and vibration when the Cu wire is bonded to the electrode pad.

Japanese Patent Laid-Open No. 1-187832

  However, by increasing the Cu content of the electrode pad mainly composed of Al, the oxidation of Cu on the electrode pad surface proceeds. For this reason, it becomes difficult for a new surface to appear at the time of wire bonding, and it is necessary to increase the power at the time of bonding in order to prevent a decrease in bonding strength between the electrode pad and the Cu wire. As a result, there is a problem that the semiconductor element under the electrode pad is damaged at the time of bonding with a hard Cu wire.

  In view of the above problems, an object of the present invention is to provide a semiconductor device and a method for manufacturing the semiconductor device, in which a semiconductor element under an electrode pad is not damaged during bonding with a Cu wire.

  According to one aspect of the present invention, there is provided a semiconductor device capable of electrical connection using a bonding wire mainly composed of copper, the semiconductor element, and an electrode pad mainly composed of aluminum disposed on the semiconductor element. There is provided a semiconductor device comprising an electroless nickel / palladium / gold plating layer disposed on an electrode pad and having a bonding wire connected to the surface thereof.

  According to another aspect of the present invention, a semiconductor element, an electrode pad mainly composed of aluminum disposed on the semiconductor element, and a laminate layer of a nickel film and a palladium film disposed on the electrode pad, There is provided a semiconductor device including an alloy layer of palladium and copper disposed on a laminated body layer and a bonding wire mainly composed of copper connected to the alloy layer.

  According to still another aspect of the present invention, a step of preparing a semiconductor element on which an electrode pad mainly composed of aluminum is disposed, and a step of forming an electroless nickel / palladium / gold plating layer on the electrode pad are provided. And a step of bonding a bonding wire mainly composed of copper to the electroless nickel / palladium / gold plating layer.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor device which does not damage a semiconductor element under an electrode pad at the time of bonding by Cu wire, and the manufacturing method of a semiconductor device can be provided.

It is a mimetic diagram showing the structure of the semiconductor device concerning the embodiment of the present invention. It is a mimetic diagram showing structure after bonding of a semiconductor device concerning an embodiment of the present invention.

  Next, an embodiment of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic and ratios of thicknesses of the respective parts are different from actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  Further, the embodiments described below exemplify apparatuses and methods for embodying the technical idea of the present invention, and the embodiments of the present invention include the material, shape, structure, arrangement, etc. of the component parts. Is not specified as follows. The embodiment of the present invention can be variously modified within the scope of the claims.

A semiconductor device 1 according to an embodiment of the present invention is a semiconductor device that can be electrically connected by a bonding wire containing Cu as a main component. As shown in FIG. 1, the semiconductor device 1 includes a semiconductor element 10, an electrode pad 20 mainly composed of Al disposed on the semiconductor element 10, and an electroless nickel / palladium disposed on the electrode pad. A gold plating layer (hereinafter referred to as “Ni / Pd / Au plating layer”) 30. A bonding wire is connected to the surface of the Ni / Pd / Au plating layer 30. The semiconductor element 10 is composed of a laminate 11 in which various semiconductor layers and insulating films are laminated on a semiconductor substrate, and electrodes and wirings not shown in the figure. Has a layer. An insulating film 12 is disposed on the upper surface of the stacked body 11. The electrode pad 20 is electrically connected to an electrode and a wiring layer of the semiconductor element 10 in an opening (not shown) provided in the insulating film 12. The insulating film 12 is, for example, a silicon oxide (SiO 2 ) film, a silicon nitride (SiN) film, a polyimide film, or the like.

  The electrode pad 20 is made of, for example, a metal containing Al as a main component and Cu. At this time, the copper content in the electrode pad 20 is, for example, about 0.3 to 5.0% by weight. The film thickness of the electrode pad 20 is, for example, about 1 μm to 2 μm.

  The Ni / Pd / Au plating layer 30 is an electroless Ni / Pd / Au plating film formed on the electrode pad 20. For the formation of the Ni / Pd / Au plating layer 30, a general zinc substitution method can be employed. The respective film thicknesses of the Ni plating layer 31, the Pd plating layer 32, and the Au plating layer 33 included in the Ni / Pd / Au plating layer 30 are the same as those in the formation of the known Ni / Pd / Au plating.

  The film thickness of the Ni plating layer 31 is, for example, 1 μm to 5 μm, preferably 3 μm to 4 μm. The film thickness of the Pd plating layer 32 is, for example, 0.1 μm to 1.0 μm. The film thickness of the Au plating layer 33 is, for example, 0.01 μm to 0.05 μm, and preferably about 0.03 μm.

  An example in which the bonding wire 40 is bonded to the semiconductor device 1 shown in FIG. 1 is shown in FIG. The bonding wire 40 is a Cu wire containing Cu as a main component.

  The bonding wire 40 is bonded to the Ni / Pd / Au plating layer 30 by, for example, ultrasonic bonding. The bonding wire 40 and the surface of the Ni / Pd / Au plating layer 30 are rubbed with each other by ultrasonic waves to generate new surfaces. When these new surfaces are brought into close contact with each other, adhesion between different metals proceeds, and the bonding wire 40 and the Ni / Pd / Au plating layer 30 are joined. At this time, since the uppermost Au plating layer 33 of the Ni / Pd / Au plating layer 30 is a film that is formed very thinly to prevent oxidation of the Ni / Pd / Au plating layer 30, Removed during bonding. Then, Pd on the Pd plating layer 32 reacts with Cu of the bonding wire 40 to form an alloy layer 35 of Pd and Cu.

  As a result, as shown in FIG. 2, the semiconductor device 1 to which the bonding wire 40 is bonded includes the semiconductor element 10, the electrode pad 20, the Ni plating layer 31, the Pd plating layer 32, and the Pd and Cu alloy layer 35. It is a structured. A bonding wire 40 is connected to the alloy layer 35.

  The bonding wire 40 is a wire that electrically connects the electrode pad 20 and the inner lead of the semiconductor device 1 or a wire that electrically connects the electrode pad 20 and the wiring pattern on the printed circuit board on which the semiconductor device 1 is mounted. Also used as

  In the semiconductor device 1, the surface of the electrode pad 20 is not exposed by disposing the Ni / Pd / Au plating layer 30 on the electrode pad 20. For this reason, oxidation of Cu on the surface of the electrode pad 20 can be prevented.

  Since the bonding wire 40 which is a Cu wire is hard, there is a possibility that the semiconductor element 10 under the electrode pad 20 may be damaged when the bonding wire 40 is bonded to the electrode pad 20.

  However, in the semiconductor device 1, the Ni / Pd / Au plating layer 30 having high hardness is disposed on the electrode pad 20. For this reason, the impact at the time of bonding is absorbed by the Ni / Pd / Au plating layer 30, and damage to the insulating film 12 below the electrode pad 20 at the time of bonding can be suppressed.

  In addition, when the Cu content of the electrode pad 20 is high, there is a problem that the bonding area is reduced due to the corrosion that reacts with water during the dicing process and pinholes are generated in the electrode pad 20, and the bonding strength of wire bonding is reduced. However, in the semiconductor device 1, since the Ni / Pd / Au plating layer 30 is disposed on the electrode pad 20, generation of pinholes on the surface of the electrode pad 20 is prevented. For this reason, the bonding strength can be maintained high.

  Further, since the Pd plating layer 32 has little alloy growth, no Kirkendall void is generated. For this reason, the bonding strength between the alloy layer 35 and the bonding wire 40 does not deteriorate, and the bonding life is improved.

  As described above, in the semiconductor device 1 according to the embodiment of the present invention, the electroless nickel / palladium / gold plating is performed on the electrode pad 20, and the Ni / Pd / Au plating layer 30 is a bonding wire that is a Cu wire. 40 are joined. Since the impact during bonding is absorbed by the Ni / Pd / Au plating layer 30, the semiconductor device 1 can provide a semiconductor device in which the semiconductor element 10 below the electrode pad 20 is not damaged during bonding.

(Other embodiments)
As described above, the present invention has been described according to the embodiments. However, it should not be understood that the descriptions and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  In the description of the embodiment described above, the case where the material of the electrode pad 20 is Al and Cu has been exemplarily described. However, the material of the electrode pad 20 is limited to this as long as Al is the main component. Absent. For example, the electrode pad 20 which has Al as a main component, Cu content of 0.3 to 5.0 wt%, and silicon (Si) may be used. Alternatively, the electrode pad 20 may be an Al film of 99.99% by weight or more.

  The embodiment of the present invention can be applied as a resin-encapsulated semiconductor device in which a semiconductor element (including an electrode pad of a semiconductor element and a metal layer of the semiconductor element) and a wire are covered with a resin. For example, an epoxy resin or a halogen-free resin can be used as the resin.

  Moreover, the wire which coat | covered the metal plating for the oxidation prevention to the bonding wire 40 is also employable. For example, palladium (Pd) plated Cu wire can be used for the bonding wire 40.

  As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device 10 ... Semiconductor element 11 ... Laminated body 12 ... Insulating film 20 ... Electrode pad 30 ... Ni / Pd / Au plating layer 31 ... Ni plating layer 32 ... Pd plating layer 33 ... Au plating layer 35 ... Alloy layer 40 ... Bonding wire

Claims (7)

  1. A semiconductor device capable of electrical connection by a bonding wire mainly composed of copper,
    A semiconductor element;
    An electrode pad mainly composed of aluminum and disposed on the semiconductor element;
    A semiconductor device comprising: an electroless nickel / palladium / gold plating layer disposed on the electrode pad and connected to the bonding wire on a surface thereof.
  2. A semiconductor element;
    An electrode pad mainly composed of aluminum and disposed on the semiconductor element;
    A layer of nickel film and palladium film disposed on the electrode pad;
    An alloy layer of palladium and copper disposed on the laminate layer;
    A semiconductor device comprising: a bonding wire mainly composed of copper connected to the alloy layer.
  3.   The semiconductor device according to claim 1, wherein the electrode pad contains aluminum as a main component and copper.
  4.   4. The semiconductor device according to claim 3, wherein the copper content in the electrode pad is 0.3 to 5.0% by weight.
  5. Preparing a semiconductor element in which an electrode pad mainly composed of aluminum is disposed on the surface;
    Forming an electroless nickel / palladium / gold plating layer on the electrode pad;
    Bonding a bonding wire containing copper as a main component to the electroless nickel / palladium / gold plating layer.
  6.   6. The palladium-copper alloy layer is formed by reacting palladium on the palladium layer of the electroless nickel / palladium / gold plating layer with copper contained in the bonding wire. Semiconductor device manufacturing method.
  7.   7. The method of manufacturing a semiconductor device according to claim 5, wherein the bonding wire is bonded to the electroless nickel / palladium / gold plating layer by ultrasonic bonding.
JP2011135117A 2011-06-17 2011-06-17 Semiconductor device and semiconductor device manufacturing method Pending JP2013004781A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928436A (en) * 2013-01-11 2014-07-16 英飞凌科技股份有限公司 Bonded System With Coated Copper Conductor
KR20140121330A (en) * 2013-04-05 2014-10-15 타나카 덴시 코오교오 카부시키가이샤 Bonding wire for high speed signal line
KR101568479B1 (en) 2013-05-14 2015-11-11 타나카 덴시 코오교오 카부시키가이샤 Bonding wire for high speed signal
JP2016018976A (en) * 2014-07-11 2016-02-01 ローム株式会社 Electronic device
US9853005B2 (en) 2014-07-09 2017-12-26 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same

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JP2001267357A (en) * 2000-02-18 2001-09-28 Texas Instr Inc <Ti> Structure of bonding pad of copper metallized integrated circuit and manufacturing method for the same
JP2009177104A (en) * 2007-02-20 2009-08-06 Nec Electronics Corp Semiconductor device
JP2011026680A (en) * 2009-07-28 2011-02-10 Renesas Electronics Corp Method for producing semiconductor device and production device for semiconductor device

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JP2001267357A (en) * 2000-02-18 2001-09-28 Texas Instr Inc <Ti> Structure of bonding pad of copper metallized integrated circuit and manufacturing method for the same
JP2009177104A (en) * 2007-02-20 2009-08-06 Nec Electronics Corp Semiconductor device
JP2011026680A (en) * 2009-07-28 2011-02-10 Renesas Electronics Corp Method for producing semiconductor device and production device for semiconductor device

Cited By (7)

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