TWI423920B - 製造提供氣隙控制之微機電系統裝置之方法 - Google Patents
製造提供氣隙控制之微機電系統裝置之方法 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
- B81C2201/0163—Controlling internal stress of deposited layers
- B81C2201/0167—Controlling internal stress of deposited layers by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
Description
本發明係關於用作干涉調變器之微機電系統。更特定言之,本發明係關於製造在活動元件與基板之間具有不同大小空腔之微機電系統裝置的改良方法。
微機電系統(MEMS)包括微機械元件、致動器及電子設備。使用沈積、蝕刻,及/或蝕刻掉基板及/或所沈積材料層之部分或添加層之其他顯微機械加工處理可產生微機械元件以形成電及機電裝置。一種類型之MEMS裝置被稱為干涉調變器。於本文中使用時,術語干涉調變器或干涉光調變器係指使用光干涉之原理選擇性地吸收及/或反射光的裝置。在某些實施例中,干涉調變器可包含一對傳導板,該對傳導板中之一或兩個傳導板可為整體或部分透明及/或反射的,且能夠在施加合適電信號時相對運動。在一特定實施例中,一板可包含一沈積於基板上之固定層,且另一板可包含一藉由氣隙與該固定層分離之金屬隔膜。如本文較詳細描述的,一板相對於另一板之位置可改變入射於干涉調變器上的光之光干涉。該等裝置具有廣泛應用,且在此項技術中利用及/或修改此等類型裝置之特徵以便可將其特徵用於改良現有產品及產生尚未開發之新產品係有益的。
提供用於製造至少兩種類型之微機電系統(MEMS)裝置之方法的一實施例,該至少兩種類型之MEMS裝置在移除犧牲材料之後具有不同的釋放狀態,該方法包括:提供一基板;在該基板之至少一部分上方形成一第一導電層;在該第一導電層之至少一部分上方形成一第一犧牲層;在該第一犧牲層上方形成複數個導電活動元件,且在該基板上方形成複數個撓曲控制器,該等撓曲控制器經組態以在移除該犧牲層時可操作地支撐該等導電活動元件,且其中該第一犧牲層係可移除的,以藉此釋放該等MEMS裝置且在該第一導電層與該等活動元件之間形成具有至少兩個間隙大小的空腔。
另一實施例提供一種製造至少兩種類型之干涉調變器之方法,該至少兩種類型之干涉調變器在移除一犧牲材料之後具有不同的空腔深度,該方法包括:提供一基板;在該基板之至少一部分上方形成一光學堆疊;在該光學堆疊之至少一部分上方形成一第一犧牲材料,其中該犧牲材料係可移除的,以藉此形成空腔;在該第一犧牲材料之部分上方形成一第二導電層;及在該基板上方形成至少兩種類型之撓曲控制器,該等撓曲控制器經組態以可操作地支撐該第二導電層,其中該至少兩種類型之撓曲控制器包含不同大小的組件,該等不同大小的組件經組態以在移除該第一犧牲層之後,在該第二導電層之部分下方形成不同深度之空腔。
另一實施例提供一種微機電系統(MEMS)裝置,其包括:一基板;複數個活動元件,其在該基板上方,每一活動元件由一空腔而與該基板分離;及複數個撓曲控制器,其在該基板上方,該複數個撓曲控制器經組態以可操作地支撐該等活動元件,其中該複數個撓曲控制器包含具有不同尺寸之部分以控制所選撓曲。該等所選撓曲用於在該基板與該複數個活動元件之間形成具有至少兩個間隙大小的空腔。
另一實施例提供一種控制一在一包括一或多個薄膜層之裝置之兩個層之間的空腔的一深度之方法,該方法包括:提供一基板;在該基板之至少一部分上方形成一犧牲層;在該犧牲層之至少一部分上方形成一第一層;及在該基板上方形成一或多個撓曲控制器,該等撓曲控制器經組態以可操作地支撐該第一層,且在移除該犧牲層時形成深度大於該犧牲層之深度約30%或30%以上之空腔,其中垂直於該基板而量測該深度。
另一實施例提供一種未釋放微機電系統(MEMS)裝置,其包括:一基板;一犧牲層,其在該基板之至少一部分上方;一活動元件,其在該第一犧牲層上方;及一或多個撓曲控制器,其在該基板上方,該或該等撓曲控制器經組態以可操作地支撐該活動元件,且在移除該犧牲層時,在該基板與該活動元件之間形成深度大於該犧牲層之深度約30%或30%以上之一空腔,其中垂直於該基板而量測該深度,該犧牲層可藉由蝕刻移除。
另一實施例提供一種控制一在一包含一或多個薄膜層之裝置之兩個層之間的空腔的一深度之方法,該方法包括:提供一基板;在該基板之至少一部分上方形成一犧牲層,該犧牲層可藉由蝕刻移除;在該犧牲層之至少一部分上方形成一第一薄膜層;及在該基板上方形成一或多個撓曲控制器,該等撓曲控制器經組態以可操作地支撐該第一薄膜層,且在移除該犧牲層時使該薄膜層朝向該基板移位。
另一實施例提供一種未釋放微機電系統(MEMS)裝置,該裝置包括:一基板;一犧牲層,其在該基板之至少一部分上方;一活動元件,其在該第一犧牲層上方;及一或多個撓曲控制器,其在該基板上方,該或該等撓曲控制器經組態以可操作地支撐該活動元件,且在移除該犧牲層時使該活動元件朝向該基板移位,該犧牲層可藉由蝕刻移除。
以下詳細描述係針對本發明之某些特定實施例。然而,可以許多不同方式來實施本發明。在此描述中,參看其中始終用相同數字來指示相同部分的圖式。自以下描述顯而易見的是,可在經組態以顯示影像(無論是運動(例如視訊)或固定(例如靜態影像),且無論是文字或圖片)之任何裝置中實施該等實施例。更特定言之,已設想該等實施例可在多種電子裝置中實施或與其相關聯,該等電子裝置諸如(但不限於):行動電話、無線裝置、個人資料助理(PDA)、掌上型或攜帶型電腦、GPS接收器/導航儀、相機、MP3播放器、攝錄機、遊戲機、腕錶、時鐘、計算器、電視監視器、平板顯示器、電腦監視器、自動顯示器(例如,里程表顯示器等)、座艙控制器及/或顯示器、相機視野顯示器(例如,車輛中具有後視相機之顯示器)、電子照片、電子告示牌或標記、投影器、建築結構、封裝及美學結構(例如,在一塊珠寶上之影像之顯示器)。與本文所述之彼等裝置具有類似結構之MEMS裝置亦可用於非顯示應用(諸如在電子切換裝置中使用)。
一實施例提供製造在基板上具有複數個撓曲控制器的MEMS裝置的方法。該等撓曲控制器經組態以可操作地支撐導電活動元件,且在移除犧牲層時提供複數個所選撓曲。可移除犧牲層,以藉此釋放MEMS裝置且形成具有至少兩個間隙大小之空腔。撓曲控制器可實現間隙大小之增加及間隙大小之減小。結果,多個沈積、遮罩及蝕刻步驟可由較少沈積、遮罩及蝕刻步驟替代,因此在MEMS裝置之製造中節約時間及金錢。
在圖1中說明一包含一干涉MEMS顯示元件之干涉調變器顯示器實施例。在此等裝置中,像素處於亮或暗狀態。在亮("開啟"或"打開")狀態下,顯示元件將大部分入射可見光反射至使用者。當在暗("斷開"或"關閉")狀態下時,顯示元件反射極少的入射可見光至使用者。視實施例而定,"開啟"及"斷開"狀態下之光反射性質可顛倒。MEMS像素可經組態以主要在選定之顏色處反射,從而除黑色及白色外還允許彩色顯示。
圖1為繪示視覺顯示器之一系列像素中之兩個鄰近像素之等角視圖,其中各像素包含一MEMS干涉調變器。在某些實施例中,干涉調變器顯示器包含此等干涉調變器之列/行陣列。各干涉調變器包括以距彼此可變及可控距離而定位,以形成具有至少一可變尺寸之諧振光學空腔之一對反射層。在一實施例中,可在兩個位置之間移動該等反射層中之一者。在第一位置(本文稱為鬆弛位置)中,將活動反射層定位於距固定的部分反射層一相對較大距離處。在第二位置(本文稱為致動位置)中,將活動反射層定位為更緊鄰於部分反射層。視活動反射層之位置而定,自該兩層反射之入射光建設性地或破壞性地干涉,從而對各像素產生總體反射或非反射狀態。
在圖1中,像素陣列之所繪示部分包括兩個鄰近之干涉調變器12a及12b。在左側之干涉調變器12a中,說明在距光學堆疊16a(其包括部分反射層)一預定距離之鬆弛位置中的活動反射層14a。在右側之干涉調變器12b中,說明了在鄰近光學堆疊16b之致動位置中的活動反射層14b。
如本文所引用,光學堆疊16a及16b(統稱為光學堆疊16)通常包含若干個熔融層,其可包括電極層(諸如氧化銦錫(ITO))、部分反射層(諸如鉻)及透明介電質。因此,光學堆疊16係導電、部分透明且部分反射的,且可(例如)藉由將一或多個以上層沈積至透明基板20上而製造。部分反射層可由部分反射之多種材料(諸如多種金屬、半導體及介電質)而形成。部分反射層可由一或多個材料層而形成,且該等層中之每一者可由單種材料或數種材料之組合而形成。
在某些實施例中,光學堆疊之層經圖案化成平行條帶,且可如下文進一步描述而形成顯示裝置中之列電極。活動反射層14a、14b可形成為在柱18之頂部沈積的一或多個所沈積金屬層(垂直於16a、16b之列電極)及在柱18之間沈積的插入犧牲材料的一系列平行條帶。當蝕刻掉犧牲材料時,活動反射層14a、14b由一界定間隙19而與光學堆疊16a、16b分離。諸如鋁之高傳導及反射材料可用於反射層14,且此等條帶可形成顯示裝置中之行電極。
如由圖1中之像素12a所說明,在無施加電壓之情況下,空腔19保持於活動反射層14a與光學堆疊16a之間,其中活動反射層14a係處於機械鬆弛狀態。然而,當將電位差施加至選定列及行時,在對應像素處之列電極及行電極之相交處形成的電容器變為充電狀態,且靜電力將該等電極拉在一起。若電壓足夠高,則將使活動反射層14變形,且迫使其抵靠在光學堆疊16上。如由圖1中右側之像素12b所說明,在光學堆疊16b中之介電層(未在此圖中說明)可避免短路且控制在層14b與層16b之間的分離距離。無關於所施加電位差之極性,行為均相同。以此方式,可控制反射對非反射像素狀態之列/行致動在許多方面與在習知LCD及其他顯示技術中所使用之列/行致動類似。
圖2至圖5B說明一用於在顯示應用中使用干涉調變器陣列之例示性處理及系統。
圖2為說明可併有本發明之態樣的電子裝置之一實施例的系統方塊圖。在該例示性實施例中,該電子裝置包括一處理器21,其可為任何通用單或多晶片微處理器(諸如ARM、Pentium、Pentium II、Pentium III、Pentium IV、PentiumPro、8051、MIPS、Power PC、ALPHA)或任何特殊用途微處理器(諸如數位信號處理器、微控制器或可程式化閘陣列)。如在此項技術中所習知的,處理器21可經組態以執行一或多個軟體模組。除執行作業系統外,處理器還可經組態以執行一或多個軟體應用程式,包括網頁瀏覽器、電話應用程式、電子郵件程式或任何其他軟體應用程式。
在一實施例中,處理器21亦經組態以與一陣列驅動器22通信。在一實施例中,陣列驅動器22包括一列驅動器電路24及一行驅動器電路26,其將信號提供至顯示陣列或面板30。在圖1中說明之陣列橫截面係由在圖2中之線1-1而展示。對MEMS干涉調變器而言,列/行制動方案可利用在圖3中說明之此等裝置的滯後性質。可能需要(例如)10伏特電位差以導致活動層自鬆弛狀態變形為致動狀態。然而,當電壓自該值減小時,活動層在電壓下降回至10伏特以下時維持其狀態。在圖3之例示性實施例中,活動層未完全鬆弛直到電壓下降至2伏特以下。因此存在一電壓範圍(在圖3中所說明之實例中為約3 V至7 V),在該範圍內存在在其內裝置穩定地處於鬆弛或致動狀態的施加電壓窗。本文將其稱為"滯後窗"或"穩定窗"。對具有圖3之滯後特徵的顯示陣列而言,列/行致動方案可經設計以使在列選通期間,在選通列中待致動之像素曝露於約10伏特之電壓差,且待鬆弛之像素曝露於接近於零伏特之電壓差。在選通之後,像素被曝露於約5伏特之穩定狀態電壓差下,使得該等像素保持處於列選通將其置入的狀態下。在此實例中,在被寫入後,各像素具有在3伏特至7伏特之"穩定窗"內的電位差。此特徵使得在圖1中所說明之像素設計在相同所施加電壓條件下於預先存在之致動抑或鬆弛狀態中皆穩定。因為干涉調變器之各像素(無論在致動或鬆弛狀態中)實質上為由固定及活動反射層形成之電容器,故可在滯後窗中之一電壓下保持此穩定狀態,其中幾乎無功率消耗。若所施加電位為固定的,則實質上無電流流入像素中。
在典型應用中,可藉由根據第一列中之所要致動像素組確立行電極組來產生顯示圖框。接著將列脈衝施加至列1電極,致動對應於所確立之行線的像素。接著將所確立之行電極組改變為對應於在第二列中之所要的致動像素組。接著將脈衝施加至列2電極,根據所確立之行電極致動列2中之合適像素。列1像素不受列2脈衝影響,且保持於其在列1脈衝期間被設定之狀態。此可對於整個系列之列以順序方式重複以產生圖框。大體而言,藉由以每秒某所要數目之圖框來持續重複此過程,可用新的顯示資料刷新及/或更新該等圖框。用於驅動像素陣列之列及行電極以產生顯示圖框之多種方案亦為吾人所熟知且可與本發明結合使用。
圖4、圖5A及圖5B說明一用於在圖2之3×3陣列上產生顯示圖框之可能的致動方案。圖4說明可用於展現圖3之滯後曲線之像素的行電壓位準及列電壓位準的可能設定。在圖4之實施例中,致動一像素涉及將合適行設定為-Vbias
,且將合適列設定為+△V(其可分別對應於-5伏特及+5伏特)。鬆弛該像素係藉由將合適行設定為+Vbias
,且將合適列設定為相同的+△V,從而在該像素上產生零伏特之電位差而實現。在列電壓保持於零伏特之彼等列中,不管行處於+Vbias
或-Vbias
,像素均穩定地處於其最初所處之狀態中。亦如圖4中所說明,應瞭解,可使用與上述電壓之極性相反之電壓,例如致動一像素可涉及將合適行設定為+Vbias
及將合適列設定為-△V。在此實施例中,釋放像素係藉由將合適行設定為-Vbias
且將合適列設定為相同-△V,從而在像素上產生零伏特電位差而完成。
圖5B為一展示施加至圖2之3×3陣列之一系列的列及行信號之時序圖,其將導致在圖5A中說明之顯示配置,在該配置中所致動像素為非反射的。在寫入圖5A中所說明之圖框之前,像素可處於任何狀態中,且在該實例中,所有列均處於0伏特,且所有行均處於+5伏特。在該等所施加電壓下,所有像素均穩定地處在其現有的致動或鬆弛狀態中。
在圖5A之圖框中,像素(1,1)、(1,2)、(2,2)、(3,2)及(3,3)被致動。為完成此目的,在列1之"線時間"期間,將行1及2設定為-5伏特,且將行3設定為+5伏特。因為所有像素均保持於3至7伏特之穩定窗中,故此舉並未改變任何像素之狀態。接著用自0伏特升至5伏特且降回至0伏特之脈衝來選通列1。此舉致動(1,1)及(1,2)像素而鬆弛(1,3)像素。陣列中之其他像素未受影響。為了按需要設定列2,將行2設定為-5伏特,且將行1及3設定為+5伏特。施加至列2之相同選通脈衝將致動像素(2,2)而鬆弛像素(2,1)及(2,3)。再次,陣列之其他像素未受影響。類似地藉由將行2及3設定為-5伏特且將行1設定為+5伏特來設定列3。列3選通脈衝設定列3像素(如圖5A中所示)。在寫入圖框後,列電位為零,且行電位可保持於+5伏特或-5伏特,且顯示穩定於圖5A之配置中。應瞭解,相同程序可用於具有數十個或數百個列及行之陣列。亦應瞭解,用於執行列及行致動之電壓之時序、序列及位準可在上文所概括之一般原理中進行較大改變,且以上實例僅為例示性的,且任何致動電壓方法可與本文所述之系統及方法一起使用。
圖6A及圖6B為說明顯示裝置40之一實施例的系統方塊圖。該顯示裝置40可為(例如)蜂巢式電話或行動電話。然而,顯示裝置40之相同組件或其微小改變亦說明了多種類型之顯示裝置(諸如電視機及攜帶型媒體播放器)。
顯示裝置40包括一外殼41、一顯示器30、一天線43、一揚聲器45、一輸入裝置48及一麥克風46。外殼41通常藉由熟習此項技術者所熟知之多種製造方法(包括射出成形及真空成形)中之任一種方法而形成。此外,外殼41可由多種材料中之任一種材料製得,該等材料包括(但不限於)塑膠、金屬、玻璃、橡膠及陶瓷或其組合。在一實施例中,外殼41包括可與其他具有不同顏色或含有不同標識、圖片或符號之可移除部分互換之可移除部分(未圖示)。
例示性顯示裝置40之顯示器30可為多種顯示器中之任一種顯示器,該等顯示器包括如本文所描述之雙穩態顯示器。在其他實施例中,顯示器30包括熟習此項技術者所熟知之平板顯示器(諸如上文描述之電漿、EL、OLED、STN LCD或TFT LCD)或非平板顯示器(諸如CRT或其他管狀裝置)。然而,出於描述本實施例之目的,顯示器30包括如本文所描述之干涉調變器顯示器。
在圖6B中示意性地說明例示性顯示裝置40之一實施例之組件。所說明之例示性顯示裝置40包括一外殼41且可包括至少部分封閉於其中之額外組件。舉例而言,在一實施例中,例示性顯示裝置40包括一網路介面27,網路介面27包括一天線43,該天線43耦接至一收發器47。收發器47連接至一處理器21,處理器21連接至調節硬體52。調節硬體52可經組態以調節信號(例如,過濾信號)。調節硬體52連接至一揚聲器45及一麥克風46。處理器21亦連接至一輸入裝置48及一驅動器控制器29。驅動器控制器29耦接至一圖框緩衝器28且耦接至一陣列驅動器22,該陣列驅動器22又耦接至一顯示陣列30。一電源50按特定例示性顯示裝置40設計之需要將電力提供至所有組件。
網路介面27包括天線43及收發器47,使得例示性顯示裝置40可經由網路與一或多個裝置通信。在一實施例中,網路介面27亦可具有某些處理能力以減輕對處理器21之需求。天線43為熟習此項技術者所知之用於發射及接收信號的任何天線。在一實施例中,天線根據IEEE 802.11標準(包括IEEE 802.11(a)、(b)或(g))發射及接收RF信號。在另一實施例中,天線根據藍芽(BLUETOOTH)標準發射及接收RF信號。在蜂巢式電話之情況下,天線經設計以接收CDMA、GSM、AMPS或用於在無線蜂巢式電話網路中通信之其他已知信號。收發器47預處理自天線43接收之信號,使得該等信號可由處理器21接收且進一步操作。收發器47亦處理自處理器21接收之信號,使得該等信號可經由天線43自例示性顯示裝置40發射。
在一替代實施例中,收發器47可由接收器替換。在又一替代實施例中,網路介面27可由一影像源替代,該影像源可儲存或產生待發送至處理器21之影像資料。舉例而言,影像源可為諸如數位視訊光碟(DVD)之記憶體裝置或含有影像資料之影碟機,抑或產生影像資料之軟體模組。
處理器21通常控制例示性顯示裝置40之整體操作。處理器21接收資料(諸如來自網路介面27或影像源之壓縮影像資料)且將資料處理為原始影像資料,或處理為易於處理為原始影像資料之格式。處理器21接著將經處理之資料發送至驅動器控制器29,或發送至圖框緩衝器28以供儲存。原始資料通常係指識別影像中各位置處之影像特徵的資訊。舉例而言,該影像特徵可包括顏色、飽和度及灰度階。
在一實施例中,處理器21包括用於控制例示性顯示裝置40之操作的微控制器、CPU或邏輯單元。調節硬體52通常包括用於將信號發射至揚聲器45且自麥克風46接收信號之放大器及濾波器。調節硬體52可為在例示性顯示裝置40中之離散組件,或可併入處理器21或其他組件中。
驅動器控制器29直接自處理器21或自圖框緩衝器28得到由處理器21產生的原始影像資料,且將該原始影像資料合適地重新格式化以高速發射至陣列驅動器22。具體言之,驅動器控制器29將原始影像資料重新格式化為具有光柵樣格式之資料流,以使原始影像資料具有適於在顯示陣列30內掃描之時間順序。接著,驅動器控制器29將格式化資訊發送至陣列驅動器22。儘管驅動器控制器29(諸如LCD控制器)通常作為獨立積體電路(IC)與系統處理器21相關聯,但可以多種方式實施該等控制器。該等控制器可作為硬體嵌入處理器21中、作為軟體嵌入處理器21中或以硬體形式與陣列驅動器22完全整合。
通常,陣列驅動器22接收來自驅動器控制器29之格式化資訊且將視訊資料重新格式化為一組平行波形,該等平行波形每秒多次地施加至來自顯示器之x-y像素矩陣之數百條(且有時數千條)引線。
在一實施例中,驅動器控制器29、陣列驅動器22及顯示陣列30適合於本文描述之任一類型的顯示器。舉例而言,在一實施例中,驅動器控制器29為習知顯示控制器或雙穩態顯示控制器(例如,干涉調變器控制器)。在另一實施例中,陣列驅動器22為習知驅動器或雙穩態顯示驅動器(例如,干涉調變器顯示器)。在一實施例中,驅動器控制器29與陣列驅動器22整合。該實施例在諸如蜂巢式電話、手錶及其他小型顯示器之高度整合系統中係常見的。在又一實施例中,顯示陣列30為典型顯示陣列或雙穩態顯示陣列(例如,包括干涉調變器之陣列的顯示器)。
輸入裝置48允許使用者控制例示性顯示裝置40之操作。在一實施例中,輸入裝置48包括小型鍵盤(諸如QWERTY鍵盤或電話小型鍵盤)、按鈕、開關、觸敏螢幕、壓敏或熱敏隔膜。在一實施例中,麥克風46為用於例示性顯示裝置40之輸入裝置。當麥克風46用於將資料輸入至裝置時,可由使用者提供語音指令以控制例示性顯示裝置40之操作。
電源50可包括在此項技術中熟知之多種能量儲存裝置。舉例而言,在一實施例中,電源50可為諸如鎳鎘電池組或鋰離子電池組之可再充電電池組。在另一實施例中,電源50為可再生能源、電容器或太陽能電池(包括塑膠太陽能電池及太陽能電池漆)。在另一實施例中,電源50經組態以自壁式插座接收電力。
在某些實施中,如上文所述,控制可程式性(control programmability)駐留於驅動器控制器中,該驅動器控制器可位於電子顯示系統中之若干位置中。在某些情況下,控制可程式性駐留於陣列驅動器22中。熟習此項技術者將認識到,可在任何數目的硬體及/或軟體組件中及在多種組態中實施上述最佳化。
根據上文闡述之原理操作之干涉調變器之結構的細節可改變較大。舉例而言,圖7A至圖7E說明活動反射層14及其支撐結構之五個不同實施例。圖7A為圖1之實施例的橫截面,其中金屬材料14之條帶係在垂直延伸支撐物18上沈積。在圖7B中,活動反射層14僅在隅角處(在繫栓32上)附接至支撐物。在圖7C中,活動反射層14係自可變形層34懸掛,該可變形層34可包含可撓性金屬。可變形層34直接或間接地在該可變形層34周邊周圍連接至基板20。本文將此等連接稱為支撐柱。在圖7D中說明之實施例具有支撐柱插塞42,可變形層34擱置於該等支撐柱插塞42上。如圖7A至圖7C中,活動反射層14保持懸掛於空腔上方,但可變形層34並未藉由填充在可變形層34與光學堆疊16之間的孔來形成支撐柱。實情為,支撐柱係由用於形成支撐柱插塞42之平坦化材料形成。在圖7E中說明之實施例係基於在圖7D中展示之實施例,但亦可調適為與在圖7A至圖7C中說明之實施例中之任一實施例及未圖示之額外實施例一起起作用。在圖7E中展示之實施例中,金屬或其他傳導材料之額外層用於形成匯流排結構44。此允許信號沿干涉調變器之後部導引,從而消除原本可能應在基板20上形成之多個電極。
在諸如圖7中展示之實施例的實施例中,干涉調變器用作直接觀視裝置,其中自透明基板20之前側(該側與配置有調變器之側相對)觀視影像。在此等實施例中,反射層14光學屏蔽干涉調變器在反射層之與基板20相對之側上的部分(包括可變形層34)。此允許組態及操作屏蔽區域,而不會不良地影響影像品質。該屏蔽允許圖7E中的匯流排結構44提供分離調變器之光學性質與調變器之機電性質的能力,諸如定址與由該定址引起之運動。此可分離調變器架構允許用於調變器之機電態樣及光學態樣之結構設計及材料彼此獨立地選擇及起作用。此外,在圖7C至圖7E中展示之實施例具有得自由可變形層34進行之反射層14之光學性質與其機械性質之去耦的額外益處。此允許用於反射層14之結構設計及材料相對於光學性質最佳化,而用於可變形層34之結構設計及材料相對於所要機械性質最佳化。
圖8為說明在用於干涉調變器之製造過程800之一實施例中的某些步驟的流程圖。該等步驟連同在圖8中未圖示之其他步驟可存在於用於製造(例如)在圖1及圖7中說明之一般類型的干涉調變器的過程中。參看圖1、圖7及圖8,過程800開始於步驟805處,其中在基板20上方形成光學堆疊16。基板20可為透明基板(諸如玻璃或塑膠),且可已經受預先準備步驟(例如,清洗)以促進光學堆疊16之有效形成。如上文所論述,光學堆疊16係導電、部分透明且部分反射的,且可(例如)藉由將一或多個層沈積至透明基板20上而製造。在某些實施例中,該等層可圖案化為平行條帶,且可形成顯示裝置中之列電極。在某些實施例中,光學堆疊16包括在一或多個金屬層(例如,反射層及/或傳導層)上方沈積之絕緣層或介電層。
在圖8中說明之過程800在步驟810處繼續,在步驟810,在光學堆疊16上方形成犧牲層。隨後移除犧牲層(例如,在步驟825處)以如下文所論述形成空腔19,且因此犧牲層未在圖1及圖7中所說明之所得干涉調變器12中展示。犧牲層在光學堆疊16上之形成可包括以經選擇以在隨後移除之後提供具有所要大小之空腔19的厚度沈積XeF2
可蝕刻材料(諸如鉬或非晶矽)。使用諸如物理氣相沈積(PVD,例如濺鍍)、電漿增強化學氣相沈積(PECVD)、熱化學氣相沈積(熱CVD)或旋塗之沈積技術,可進行犧牲材料之沈積。
在圖8中說明之過程800在步驟815處繼續,在步驟815,形成支撐結構(例如,在圖1及圖7中說明之柱18或下文論述之鉚釘)。柱18之形成可包括以下步驟:圖案化犧牲層以形成支撐結構孔隙,接著使用諸如PECVD、熱CVD或旋塗之沈積方法將一材料(例如,聚合物或二氧化矽)沈積至該孔隙中以形成柱18。在某些實施例中,在犧牲層中形成之支撐結構孔隙穿過犧牲層及光學堆疊16延伸至下伏基板20,以使得柱18之下端接觸基板20(如圖7A中所說明)。在其他實施例中,在犧牲層中形成之孔隙延伸穿過犧牲層,但未穿過光學堆疊16。舉例而言,圖7C說明支撐柱插塞42之下端與光學堆疊16接觸。下文給出針對柱及鉚釘之形成而提供之其他實施例的更詳細論述。
在圖8中說明之過程800在步驟820處繼續,在步驟820,形成活動反射層(諸如在圖1及圖7中說明之活動反射層14)。藉由使用一或多個沈積步驟(例如,反射層(例如鋁、鋁合金)沈積)連同一或多個圖案化、遮罩及/或蝕刻步驟,可形成活動反射層14。如上文所論述,活動反射層14通常係導電的,且本文可將其稱為導電層。因犧牲層仍存在於在過程800之步驟820處形成之部分製成的干涉調變器中,故在此階段,活動反射層14通常並不活動。本文可將含有犧牲層之部分製成的干涉調變器稱為"未釋放"干涉調變器。
在圖8中說明之過程800在步驟825處繼續,在步驟825,形成一空腔(例如,在圖1及圖7中說明之空腔19)。藉由將犧牲材料(在步驟810處沈積)曝露於蝕刻劑,可形成空腔19。舉例而言,藉由乾式化學蝕刻(例如,藉由將犧牲層曝露於氣態或蒸汽蝕刻劑(諸如得自固態二氟化氙(XeF2
)之氣體)一段可有效移除所要量材料的時間,該時間通常相對於空腔19周圍之結構而選擇),可移除諸如鉬或非晶矽之可蝕刻犧牲材料。亦可使用諸如濕式蝕刻及/或電漿蝕刻之其他蝕刻方法。因在過程800之步驟825期間移除犧牲層,故在此階段之後,活動反射層14通常為活動的。在移除犧牲材料之後,本文可將所得完全或部分製成之干涉調變器稱為"已釋放"干涉調變器。
在一實施例中,支撐結構可採用在活動層下方之柱結構(例如,在圖1及圖7中展示之柱18)的形式。參看圖9A至圖9G論述用於製造包含支撐柱之干涉調變器的例示性過程。在多個實施例中,製造干涉調變器包含在基板上形成光學堆疊,該基板可為透光基板,且在其他實施例中為透明基板。光學堆疊可包含:一傳導層,其在基板上或鄰近基板形成一電極層;一部分反射層,其反射一些入射光,同時允許一些光到達干涉調變器元件之其他組件;及一介電層,其使下伏電極層與干涉調變器之其他組件絕緣。在圖9A中,可見提供一透明基板100,且在基板100上方沈積有一傳導層102及一部分反射層104。接著,在部分反射層104上方沈積一介電層106。在某些實施例中,傳導層102係透明的且包含ITO,部分反射層104包含半反射厚度之金屬(諸如鉻(Cr)),且介電層106包含二氧化矽(SiO2
)。介電層亦可為包含SiO2
及Al2
O3
之堆疊。在此過程期間之某時刻,至少圖案化傳導層102(未圖示)以形成將用於定址干涉調變器之列的列電極。在一實施例中,此圖案化在傳導層102及部分反射層104之沈積之後,但在介電層106之沈積之前發生。將層102、104及106之組合稱為光學堆疊110,且可出於方便而在隨後圖式中由一單個層指示。應瞭解,光學堆疊110之組合物可在層之數目及彼等層之組份上發生改變,且上文論述之該等層僅為例示性的。
可使用多種方法來執行關於本文所揭示之多個實施例而論述的圖案化及蝕刻處理。所用蝕刻劑可為乾式蝕刻劑或濕式蝕刻劑,且可為各向同性或各向異性的。合適乾式蝕刻劑包括(但不限於):SF6
/O2
、CHF3
/O2
、SF2
/O2
、CF4
/O2
及NF3
/O2
。通常,此等蝕刻劑適於蝕刻SiOx
、SiNx
、SiOx
Ny
、旋塗式玻璃、Nissan硬塗層及TaOx
中之一或多者,但此製程亦可蝕刻其他材料。抵抗此等蝕刻劑中之一或多者且因此可用作蝕刻障壁層的材料包括(但不限於)Al、Cr、Ni及Al2
O3
。此外,包括(但不限於)PAD蝕刻劑、BHF、KOH及磷酸之濕式蝕刻劑可用於本文描述之處理中。通常,此等蝕刻劑可為各向同性的,但藉由使用反應性離子蝕刻(RIE)(藉由電離蝕刻化學品且將離子發射至基板上而實現),可使其成為各向異性的。圖案化可包含接著用於形成遮罩之光阻(PR)層(正型或負型光阻)的沈積。或者,可利用一硬式遮罩。在某些實施例中,硬式遮罩可包含金屬或SiNx
,但應瞭解,硬式遮罩之組合物可視待蝕刻之下伏材料及待使用之蝕刻劑的選擇性而定。通常使用接著被移除之PR層來圖案化硬式遮罩,且硬式遮罩用作用於蝕刻下伏層之遮罩。當使用濕式蝕刻時,或無論何時在PR遮罩無法處理之條件下(諸如在高溫下,或當使用氧基蝕刻劑時)而經由遮罩處理時,硬式遮罩之使用可係特別有利的。亦可利用移除層之替代方法,諸如灰化蝕刻或舉離處理。
在圖9B中,可見在光學堆疊110上方沈積有一犧牲材料層112。在一實施例中,此犧牲層112包含鉬(Mo),但在其他實施例中,犧牲層112可包含諸如非晶矽(a-Si)之其他材料。在圖9C中,犧牲層112已經圖案化及蝕刻以形成楔形孔隙114,該等楔形孔隙114對應於柱或支撐區域之位置。此等孔隙114經有利地形成楔形以促進上覆層之連續且共形的沈積。
在圖9D中,在圖案化犧牲層114上方沈積有一柱材料層118,使得柱層118亦塗佈楔形孔隙114之側壁及底部。在某些實施例中,柱層118可包含氮化矽(SiNx
)或SiO2
,但可使用多種其他材料。在圖9E中,柱層118經圖案化及蝕刻以形成柱120。在圖9E中可見柱120之邊緣較佳形成楔形,此促進上覆層之連續且共形之沈積(類似於孔隙114之楔形或傾斜之側壁)。
在圖9F中,在柱120及犧牲層112之曝露部分上方沈積有一高反射層122。接著在高反射層122上方沈積一機械層124。出於方便,只要直接在高反射層122上方沈積機械層124,則可將高反射層122及機械層124稱為(且在隨後圖式中繪示為)一可變形反射層130(參看圖9G)。在替代實施例中,可變形反射層130可包含一具有所要光學及機械性質之單個層。舉例而言,用於機械開關之機械或移動層無需包括反射層。因在過程200之此階段仍存在犧牲層112,故機械層或可變形反射層130通常尚未活動。本文可將含有犧牲層(在此實施例中之層112)之部分製成的MEMS裝置135(例如,部分製成之干涉調變器)稱為"未釋放"MEMS裝置。
在圖9G中,執行釋放蝕刻以移除犧牲層112,進而形成具有干涉空腔19之干涉調變器元件140,可變形反射層130可經由該干涉空腔19移動以改變由已釋放干涉調變器元件140反射的顏色。在釋放蝕刻之前,可變形反射層130較佳經圖案化以形成行(未圖示),且可有利地經進一步圖案化以形成促進釋放蝕刻劑進入犧牲層之蝕刻孔(未圖示)。
在另一實施例中,支撐結構可採用上覆於機械或可變形反射層130上之鉚釘結構的形式。參看圖10A至10D論述且繪示用於形成上覆鉚釘結構的過程。在一實施例中,此過程包括圖9A至圖9C之步驟。在圖10A中,可見在圖案化犧牲層112上方沈積有機械層或可變形反射層130,使得可變形反射層130塗佈楔形孔隙114之側壁及底部。
在圖10B中,在可變形反射層130上方沈積鉚釘層142。鉚釘層142可包含(例如)SiO2
、SiNx
或Ni,但多種替代材料可用於鉚釘層142。接下來,在圖10C中,鉚釘層經圖案化及蝕刻以形成鉚釘結構150。因在過程200之此階段仍存在犧牲層112,故機械層或可變形反射層130通常尚未活動。本文可將含有犧牲層(在此實施例中之層112)之部分製成的MEMS裝置135(例如,部分製成之干涉調變器)稱為"未釋放"MEMS裝置。在圖10D中,可見犧牲層112已經由釋放蝕刻而移除,從而允許可變形反射層130能夠經由已釋放干涉調變器140之干涉空腔19移動。
應瞭解,經由柱120(圖9G)及鉚釘150(圖10D)之組合可提供額外支撐。舉例而言,可在干涉調變器中之某些位置中形成鉚釘150,且可在其他位置處形成柱120,或可將鉚釘150形成為上覆於柱120上。
在參看圖9A至圖9G而描述之過程中,可見犧牲層112係曝露於圖案化無機柱120(參看圖9E)之蝕刻處理,且支撐柱120類似地曝露於移除犧牲層112之釋放蝕刻劑(參看圖9G)。除非對處理流程進行修改,否則支撐柱材料118相對於犧牲材料應係可選擇性蝕刻的,且反之亦然。此外,即使存在相對於一者選擇性蝕刻另一者之蝕刻劑,但並不選擇性蝕刻之替代蝕刻劑出於其他原因而可為較佳的。
作為在支撐結構及機械層中不平衡應力之結果,可發生支撐結構及機械層之撓曲。在某些情況下,此等不平衡應力為在形成支撐結構及機械層之材料內之固有應力的結果,其為包含彼等層之材料之函數。不平衡應力之額外來源為層之熱膨脹,其為兩種不同材料之熱膨脹係數之間的失配、MEMS裝置之操作溫度、材料之彈性模數及材料沈積條件的函數。當鄰接層具有不同熱膨脹係數時,偏轉不僅可由鄰接層大小之相對改變引起,而且總偏轉可作為操作溫度之結果而改變。因為該偏轉將改變干涉空腔之高度,且因此影響由干涉調變器元件反射之顏色,故需要在製造具有不同空腔高度之干涉調變器元件之過程中考慮此撓曲。在一實施例中,應用單一厚度之犧牲層,而並非對應於多個空腔高度而多次沈積犧牲材料,且展現不同撓曲之柱及/或鉚釘在釋放干涉調變器時將產生多個空腔高度。
圖11為說明在製造裝置(諸如具有空腔之MEMS裝置)之方法之一實施例中的某些步驟的流程圖。該等步驟連同在圖11中未圖示之其他步驟可存在於用於製造(例如)在圖1及圖7中說明之一般類型的干涉調變器的過程中。在圖11中之過程的多個步驟類似於在圖9及圖10中示意性繪示的步驟。圖11之處理可用於製造諸如在圖12A至圖12K中繪示之多種未釋放及已釋放干涉調變器的MEMS裝置。在圖12中展示之裝置包括撓曲控制器,其將產生多個干涉空腔高度,同時需要較少沈積、遮罩及蝕刻步驟。參看圖9、圖10、圖11及圖12,過程200開始於提供一基板100之步驟205處。在一實施例中,基板100可包含諸如玻璃或塑膠之任何透明材料。
過程200在步驟210處繼續,在步驟210,如圖9A中所示,在基板100上形成一第一導電層102。如上文所述,第一導電層102可為單層結構或多子層結構。
過程200在步驟215處繼續,在步驟215,如圖9A中所示,形成一或多個其他層,例如,部分反射層104,及在導電層105之至少一部分上方的介電層106。如圖9B及圖12中所示,將層102、104及106之組合稱為光學堆疊110。
過程200在步驟220處繼續,在步驟220,如圖9B中所示,形成一犧牲層112。在圖9、圖10及圖12A至圖12H中,在可變形反射層130(例如,包括高反射層122及機械層124)與光學堆疊110之間形成單犧牲層。在圖12I、圖12J及圖12K中展示之干涉調變器中,在於步驟225處形成一活動反射層14(包括高反射層122)之前,在光學堆疊110上方形成一第一犧牲層112A。在圖12I、圖12J及圖12K中展示之實施例中,可將活動反射層14視為藉由一機械層34而懸掛於基板上方的活動元件。在不會損失一般性之情況下,術語活動元件在本文中將用於描述在MEMS裝置中之任何活動元件,例如:如圖9及圖10中所示之活動或可變形反射層130、如圖1及圖7中所示之活動反射層14、14a或14b中之任一層,或如圖12I、圖12J及圖12K中所示之活動元件14。可藉由沈積,接著進行圖案化及蝕刻來形成活動元件14。在形成活動元件14之後,在活動元件14上方沈積一第二犧牲層112B。可執行對第二犧牲層112B(或單犧牲層112)之隨後圖案化及蝕刻,以形成如圖9C及圖10A中所示之支撐結構孔隙114,以及如圖12中所示之用於將機械層34附接至活動元件14的孔隙。在一較佳實施例中,在於活動反射元件14(如圖12中所示)或可變形反射層130(如圖9及圖10中所示)與基板之間形成犧牲層112(或112A)之過程中僅進行一次沈積。
在干涉調變器之一實施例中,犧牲層經沈積以(在隨後移除時)在活動層14或可變形反射層130與圖1、圖7及圖12之光學堆疊16之間形成具有厚度範圍為約1000埃至約5000埃的干涉空腔。
在圖12I、圖12J及圖12K中展示之雙犧牲層實施例中,過程200在步驟230處繼續,在步驟230,在犧牲層112B之至少一部分及活動元件14之至少一部分上方形成一機械層34。在圖9及圖10中之單犧牲層實施例中,由在高反射層122上方形成之機械層124替代機械層34。機械層34及124可包含相同或不同的材料。
該過程在步驟235處繼續,在步驟235,形成撓曲控制器。在圖11中展示之例示性過程200中,形成具有不同尺寸之複數個撓曲控制器,以在移除犧牲層之後提供多個空腔大小。在另一實施例中,形成撓曲控制器,以在移除犧牲層之前提供小於或大於空腔之所要空腔大小。在移除犧牲層112之後,撓曲控制器(例如,柱結構及/或鉚釘結構)引起該等撓曲控制器附接至之隔膜(例如,可變形反射層130)的移位。下文將論述某些例示性撓曲控制器之細節。
處理200在步驟240處繼續,在步驟240,移除犧牲層112(例如,藉由蝕刻)以形成如圖10G中展示之空腔19。犧牲層之移除可(例如)藉由曝露於蝕刻劑(諸如以單獨或組合形式之XeF2
、F2
或HF)而實現。在一較佳實施例中,在蝕刻處理中移除大體上所有犧牲層112。在一實施例中,空腔19為在光學堆疊110與可變形反射層130之間的干涉空腔。在形成空腔19之後,所得MEMS裝置(例如,干涉調變器)係處於"已釋放"狀態中。
現將論述可在過程200之步驟235處形成之撓曲控制器的某些實例。舉例而言,圖12A展示一未釋放裝置(例如,一干涉調變器),其包括柱120,該等柱120具有一具有尺寸122、大體上平行於基板100及可變形反射層130之翼形部分。犧牲層112具有垂直於基板100及光學堆疊110而量測之厚度126。圖12B展示在移除犧牲層112從而形成空腔19之後的裝置。圖12B之已釋放裝置具有垂直於基板100及光學堆疊110而量測之空腔深度128A。在此實例中,在已釋放可變形層130與光學堆疊110之間的空腔的深度(展示為參考數字128A)可量測地大於在圖12A中展示之未釋放空腔深度126。空腔深度差異係歸因於由柱120與可變形反射層130之組合應力而控制之撓曲。
圖12C展示一未釋放裝置(例如,一干涉調變器)之一第二實例,其包括柱120,該等柱120具有一具有尺寸124、大體上平行於基板100及可變形反射層130之翼形部分。在此實例中,犧牲層112具有垂直於基板100及光學堆疊110而量測之與在圖12A中展示之裝置大致相同的厚度126。然而,圖12C之重疊124大於圖12A之重疊122。柱120之重疊122及124為如上文論述且在圖9E中展示之圖案化及蝕刻步驟的結果。圖12D展示在移除犧牲層112從而形成空腔19之後的圖12C之裝置。圖12D之已釋放裝置具有垂直於基板100及光學堆疊110而量測之空腔深度128B。在此實例中,在已釋放可變形層130與光學堆疊110之間的空腔的深度(展示為參考數字128B)可量測地大於在圖12A及圖12C中展示之未釋放空腔深度126,且大於在圖12B中展示之已釋放空腔深度128A。空腔深度差異係規因於由柱120(與圖12A之重疊122相比,具有重疊124)與可變形反射層130之組合應力而控制之撓曲。
圖12E及圖12G展示撓曲控制器包含上覆於可變形反射層130上之鉚釘150(如上文論述且如圖10中展示)之裝置的實例。圖12E之鉚釘150比圖12G之鉚釘150具有較小重疊部分(或翼部)(參看尺寸123及125)。在此實例中,對兩個裝置而言,犧牲層112之深度127大致相同。然而,在釋放裝置之後,對應空腔深度可顯著改變,如由圖12F之深度129A及圖12H之深度129B所繪示。
圖12I、圖12J及圖12K繪示具有多種撓曲控制柱結構120及鉚釘結構150之未釋放干涉調變器的實例。圖12I具有上覆於機械層34上之鉚釘結構150及下伏於機械層34下之柱結構,其中鉚釘150及柱120具有類似重疊。圖12J之鉚釘結構150展現較少重疊,而柱結構120展現較多重疊。圖12K繪示較柱結構120而言,鉚釘結構具有顯著更大重疊之裝置。
在干涉調變器之製造期間,觀察到在釋放裝置時(如圖12B及圖12D中所繪示),活動反射層之向上撓曲為約500埃或500埃以下。然而,在釋放裝置時(如圖12F及圖12I中所繪示),通常並不發生活動反射層之向下撓曲。藉由改變撓曲控制器(例如,柱及/或鉚釘)之大小及/或所包含之材料,可達成隔膜之增加的向上撓曲及/或向下撓曲。舉例而言,沈積較薄柱及/或鉚釘層可導致減少的向上撓曲或增加的向下撓曲。形成較硬材料之撓曲控制器可導致較小撓曲。減少在上覆撓曲控制器(例如,鉚釘)中之張應力可降低向上撓曲。減少在下伏撓曲控制器(例如,柱)中之張應力可增加向上撓曲。張應力趨向於收縮裝置之含有該等張應力的部分。相反,壓縮應力趨向於膨脹裝置之含有該等壓縮應力的部分。熟習此項技術者將認識到,藉由改變柱120及/或鉚釘150之相對大小以及改變柱120及/或鉚釘150所包含之材料,可達成顯著不同之已釋放空腔深度。藉由如上文論述改變撓曲控制器之大小及/或材料性質,可達成以下向上或向下撓曲範圍,包括:約50埃至100埃、約100埃至150埃、約150埃至200埃、約200埃至250埃、約250埃至300埃、約300埃至350埃、約350埃至400埃、約400埃至450埃、約450埃至500埃、約500埃至550埃、約550埃至600埃、約600埃至650埃、約650埃至700埃、約700埃至750埃、約750埃至800埃、約800埃至850埃、約850埃至900埃、約900埃至950埃、約950埃至1000埃、約1000埃至1050埃、約1050埃至1100埃、約1100埃至1150埃、約1150埃至1200埃或1200埃以上。此外,此等範圍之遞增或遞減約5埃、10埃、15埃、20埃及25埃係可能的。
本文描述之用於控制MEMS裝置之空腔深度的方法可對包括包含空腔之MEMS裝置(例如,干涉調變器)之多種裝置的製造具有積極效應。舉例而言,表1概述在具有相似未釋放犧牲層深度之干涉調變器中製造多種柱結構重疊的一組實驗的結果。對量測為222微米乘222微米之干涉調變器像素而言,柱結構重疊(類似於分別在圖12A及圖12C中繪示之重疊122及124)係自1微米至3微米而改變。在此等實驗中,犧牲層之厚度為約1150埃。在釋放干涉調變器之後,在活動元件與光學堆疊之間的非驅動空腔深度(垂直於基板而量測)顯著改變。
在表1中展示,柱重疊之相對較小改變導致非驅動空腔深度自最淺情況至最深情況之大於50%的改變。如上文論述,藉由改變柱及/或鉚釘之尺寸及/或材料,可顯示更大之改變。歸於於柱結構中之張應力,在測試中使用之柱結構導致間隙大小之增加(參看圖12B及圖12D)。然而,藉由利用鉚釘結構及/或柱結構與鉚釘結構之組合,亦可實現可變形反射層之降低或下沉(如圖12F及圖12H中所繪示)。如上文所論述,對干涉調變器而言,約1000埃至約5000埃之空腔深度係理想的。約2000埃至約4000埃之空腔大小範圍較佳用於調變可見光,而更小及/或更大之空腔大小可用於調變超譜光(hyperspectral light)、紫外光及/或紅外光。可達成空腔深度之約30%至40%、約40%至50%、約50%至60%、約60%至70%、約70%至80%、約80%至90%、約90%至100%或100%以上的增加。此外,對此等範圍可獲得約1%、2%、3%、4%及5%之增量或減量。
除展示撓曲控制器之多種結構對空腔深度具有之效應之上文論述的實驗之外,亦進行了模擬實驗的分析研究,且其指示亦可擔負控制空腔深度之額外能力。圖13A至圖13F展示經設計以展示在釋放裝置時,在偏轉之支撐層上可具有之改變撓曲控制器結構之特徵之效應的分析研究的結果。在研究中使用之分析方程式模型化在與鉚釘及柱結構支撐之層中含有的應力組合時,在多種鉚釘及/或柱結構中含有之張應力及收縮應力的效應。在支撐結構中及在被支撐層中含有之模型化應力表示可視形成不同層之條件而產生之應力。由研究中之負應力水準表示之壓縮應力趨向於膨脹裝置的含有該等壓縮應力之部分。由在研究中之正應力水準表示之張應力趨向於收縮裝置的含有該等張應力之部分。研究考察柱及/或鉚釘結構之多種組合。研究亦模型化撓曲控制器結構之不同部分的特定尺寸範圍及/或特徵對所得偏轉之效應。進行分析之撓曲控制器結構的尺寸及特徵包括裝置之多個部分的層厚度、重疊長度及應力水準。分析將撓曲控制器柱及/或鉚釘以及被支撐層作為懸臂梁而模型化。在分析中使用之結構表示若干類型之裝置中之任一裝置,包括(但不限於):MEMS裝置、光調變裝置及包含在薄膜層中之一層與基板之間及/或在薄膜層中之兩層之間具有空腔的一或多個薄膜層之任何裝置。
將關於在圖12中展示之干涉調變器實施例來論述在圖13A至圖13F中展示之結果。應注意,干涉調變器為可使用此處提供之分析方法而模型化之裝置的實例,且使用上文描述之多種方法亦可分析及製造其他裝置。
在第一實例中分析之裝置的組態包括包含Ni之1000埃厚(垂直於基板100而量測)的可變形反射層130。用400 MPa之張應力(表示在典型沈積條件下所見之應力水準的類型)模型化Ni層。裝置亦包括2000埃厚(垂直於基板而量測)之氧化物柱結構120。在分析中模型化之氧化物柱結構包含SiO2
。柱結構與可變形反射層130重疊3 μm,其中重疊係如同在圖12A及圖12C中展示之尺寸122及124所繪示而量測。用-400 MPa壓縮應力模型化柱結構。裝置亦包括氧化物鉚釘結構150,其中圖13A之鉚釘結構的厚度(垂直於基板而量測)為1000埃,且在圖13B之水平軸上係可變的。鉚釘結構與可變形反射層130重疊3 μm,其中重疊係如同在圖12E及圖12G中展示之尺寸123及125所繪示而量測。對在圖13B中展示之分析結果而言,鉚釘結構之應力在水平軸上係可變的,且對在圖13B中展示之分析結果而言,該應力為-400 MPa。圖13A及圖13B展示在釋放犧牲層112從而產生空腔19時,可變形反射層130之所得偏轉。正偏轉值表示如圖12B及圖12D中所繪示之自基板100離開的偏轉。負偏轉值表示如圖12F及圖12H中所繪示之朝向基板100的偏轉。
圖13A之結果展示偏轉隨壓縮應力增加(更大負值)而降低,其展示在-500 MPa氧化物鉚釘應力下,估計偏轉稍高於300埃。偏轉隨壓縮應力降為零而變大,展示在零MPa壓力水準下,估計偏轉大於800埃。藉由形成具有張應力水準(正應力)之鉚釘結構,可獲得更大值之偏轉。在圖13A之實例中,所有偏轉為正(自基板離開)之原因為,組合之-400 MPa的氧化物柱應力及400 MPa的可變形反射層應力均促進所分析之氧化物鉚釘應力水準未克服之正偏轉。偏轉之較小值(包括負偏轉值)可藉由若干方法獲得,包括:施加更大的負壓縮鉚釘應力水準、降低壓縮氧化物柱之厚度、降低氧化物柱之壓縮應力、降低壓縮氧化物柱之厚度、增加壓縮氧化物鉚釘之厚度、降低壓縮氧化物柱之重疊長度、增加壓縮鉚釘之重疊長度及熟習此項技術者所知之其他方法。此等方法均用於降低促進向上偏轉之裝置之部分(例如,壓縮柱120及拉伸可變形反射層130)的能量水準及/或增加促進向下偏轉之裝置之部分(例如,壓縮鉚釘150)的能量水準。
圖13B之結果展示,在釋放犧牲層112時,偏轉隨壓縮氧化物鉚釘150之厚度增加(增加促進向下偏轉之能量)而降低,甚至在鉚釘厚度大於約2000埃時變為負值。
下一實例包括:具有-400 MPa之壓縮應力之2000埃厚的氧化物柱120、具有-400 MPa之壓縮應力之1000埃厚的氧化物鉚釘150及具有400 MPa之張應力之1000埃厚的可變形反射Ni層130。柱120之重疊長度(參看在圖12A中之尺寸122及在圖12C中之尺寸124)與鉚釘150之重疊長度(參看在圖12E中之尺寸123及在圖12G中之尺寸125)相等且自約2 μm改變為約6 μm。圖13C展示在釋放犧牲層112時,可變形反射層130之估計偏轉。增加柱120及鉚釘150之重疊長度增加自基板100離開之偏轉。如在以上情況下,壓縮柱120及拉伸可變形反射層130均促進向上偏轉,且壓縮鉚釘150促進向下偏轉。在此情況下,層130與柱120之組合能量超過鉚釘150之能量,且偏轉均為正。藉由將氧化物柱120及氧化物鉚釘150之重疊長度自約2 μm改變為約6 μm,層130之偏轉可自約200埃改變為約1700埃。
圖13D展示在釋放犧牲層112時,在類似於圖13C(除了不存在氧化物鉚釘)之情況下,可變形反射層130之偏轉。在此實例中,因壓縮鉚釘並未對由柱120及可變形反射層130產生之向上偏轉起反作用,故可變形反射層130之正偏轉遠大於在無鉚釘情況下之正偏轉。藉由將氧化物柱120之重疊長度自約2 μm改變為約6 μm,層130之偏轉可自約500埃改變為約5500埃。
圖13E展示在釋放犧牲層112時,在類似於圖13D(包括無氧化物鉚釘),但具有3 μm之固定氧化物柱120重疊(參看在圖12A中之尺寸122及在圖12C中之尺寸124)及改變之氧化物柱應力水準的情況下,可變形反射層130之偏轉。在此實例中,可變形反射層130之正偏轉隨氧化物柱應力之負值變小(較低之壓縮應力水準)而降低。對500 MPa之壓縮氧化物柱應力水準而言,在釋放犧牲層112時,可變形反射層130之向上偏轉為約1600埃,且對零應力水準而言,該偏轉為約350埃。
最終樣本包括:具有-400 MPa之壓縮應力之2000埃厚的氧化物柱120、具有-200 MPa之壓縮應力之1000埃厚的氧化物鉚釘150及具有400 MPa之張應力之1000埃厚的可變形反射Ni層130。柱120之重疊長度(參看在圖12A中之尺寸122及在圖12C中之尺寸124)與鉚釘150之重疊長度(參看在圖12E中之尺寸123及在圖12G中之尺寸125)相等且自約2 μm改變為約6 μm。圖13F展示在釋放犧牲層112時,可變形反射層130之估計偏轉。增加柱120及鉚釘150之重疊長度增加自基板100離開之偏轉。如在以上情況下,壓縮柱120及拉伸可變形反射層130均促進向上偏轉,而壓縮鉚釘150促進向下偏轉。在此情況下,層130與柱120之組合應力水準超過鉚釘150之應力水準,且偏轉均為正。藉由將氧化物柱120及氧化物鉚釘150之重疊長度自約2 μm改變為約6 μm,層130之估計偏轉自約250埃改變為約2500埃。
上文論述之對實例的分析研究展示,組成撓曲控制器結構及/或其他層之多個部分之尺寸及/或特徵的改變在釋放裝置時可影響被支撐層之偏轉。熟習此項技術者能夠認識到修改相似類型之裝置之部分以改變已釋放裝置之空腔深度的其他方式。
未釋放干涉調變器之一實施例包括:第一反射構件,其用於反射光;第二反射構件,其用於反射光;第一支撐構件,其用於支撐第二反射構件,其中第一支撐構件可藉由蝕刻移除;及第二支撐構件,其用於支撐第二反射構件,且用於在移除第一支撐構件時在第一反射構件與第二反射構件之間形成深度大於第一支撐構件之深度約30%或30%以上的空腔。參看圖9至圖12,此實施例之態樣包括:第一反射構件為部分反射層104;第二反射構件為活動反射層14;第一支撐構件為犧牲層112;及第二支撐構件為柱結構120及鉚釘結構150中之至少一者。
未釋放干涉調變器之另一實施例包括:第一反射構件,其用於反射光;第二反射構件,其用於反射光;第一支撐構件,其用於支撐第二反射構件;及第二支撐構件,其用於支撐第二反射構件,且用於在移除第一支撐構件時實現第二反射構件朝向第一反射構件之移位,其中第一支撐構件可藉由蝕刻移除。參看圖9至圖12,此實施例之態樣包括:第一反射構件為部分反射層104;第二反射構件為活動反射層14;第一支撐構件為犧牲層112;及第二支撐構件為柱結構120及鉚釘結構150中之至少一者。
儘管以上詳細描述已展示、描述且指出了本發明在應用至多種實施例時之新奇特點,但應瞭解,熟習此項技術者可在不背離本發明之精神的情況下對所說明之裝置或處理之形式及細節進行多種省略、替代及改變。如將認識到,可在不提供本文闡述之所有特徵及益處的形式下實施本發明,此係因為某些特徵可與其他特點分離地使用或實踐。
1‧‧‧線
12a‧‧‧干涉調變器
12b‧‧‧干涉調變器
14‧‧‧反射層
14a‧‧‧活動反射層
14b‧‧‧活動反射層
16...光學堆疊
16a...光學堆疊
16b...光學堆疊
18...柱
19...間隙/空腔
20...基板
21...處理器
22...陣列驅動器
24...列驅動器電路
26...行驅動器電路
27...網路介面
28...圖框緩衝器
29...驅動器控制器
30...顯示陣列/顯示器
32...繫栓
34...可變形層
40...顯示裝置
41...外殼
42...支撐柱插塞
43...天線
44...匯流排結構
45...揚聲器
46...麥克風
47...收發器
48...輸入裝置
50...電源
52...調節硬體
100...透明基板
102...傳導層
104...部分反射層
106...介電層
110...光學堆疊
112...犧牲材料層
112A...第一犧牲層
112B...第二犧牲層
114...楔形孔隙
118...柱材料層
120...柱
122...高反射層/尺寸
123...尺寸
124...機械層/尺寸
125...尺寸
126...空腔深度
127...犧牲層深度
128A...空腔深度
128B...空腔深度
129A...空腔深度
129B...空腔深度
130...可變形反射層
135...MEMS裝置
140...干涉調變器元件
142...鉚釘層
150...鉚釘結構
圖1為繪示干涉調變器顯示器之一實施例之部分的等角視圖,其中第一干涉調變器之活動反射層處於鬆弛位置,且第二干涉調變器之活動反射層處於致動位置。
圖2為說明一併有3×3干涉調變器顯示器之電子裝置之一實施例的系統方塊圖。
圖3為圖1之干涉調變器之一例示性實施例之活動鏡面位置對所施加電壓的圖。
圖4為可用於驅動干涉調變器顯示器之一組列及行電壓的說明。
圖5A說明在圖2之3×3干涉調變器顯示器中之顯示資料的一例示性圖框。
圖5B說明可用於寫入圖5A之圖框之列及行信號的一例示性時序圖。
圖6A及圖6B為說明包含複數個干涉調變器之視覺顯示裝置之一實施例的系統方塊圖。
圖7A為圖1之裝置的橫截面。
圖7B為干涉調變器之一替代實施例的橫截面。
圖7C為干涉調變器之另一替代實施例的橫截面。
圖7D為干涉調變器之又一替代實施例的橫截面。
圖7E為干涉調變器之額外替代實施例的橫截面。
圖8為說明在製造干涉調變器之方法之一實施例中的某些步驟的流程圖。
圖9A至圖9G為說明在製造具有柱支撐結構之干涉調變器之過程中的某些步驟的示意性橫截面。
圖10A至圖10D為說明在製造具有鉚釘支撐結構之干涉調變器之過程中的某些步驟的示意性橫截面。
圖11為說明在製造具有撓曲控制器之干涉調變器之一實施例中的某些步驟的流程圖。
圖12A至圖12K展示具有可使用圖11之方法而製造之不同撓曲控制器之干涉調變器的替代實施例的橫截面。
圖13A至圖13F展示經設計以展示在釋放裝置時,在偏轉之支撐層上可具有之改變撓曲控制器結構之特徵之效應的分析研究的結果。
(無元件符號說明)
Claims (39)
- 一種製造至少兩個類型之電機裝置之方法,該方法包含:提供一基板;在該基板之至少一部分上方形成一第一導電層;在該第一傳導層之至少一部分上方形成一第一犧牲層;在該第一犧牲層上方形成複數個導電活動元件;在該基板上方形成複數個撓曲控制器,該等撓曲控制器可操作地支撐該複數個活動元件,每一撓曲控制器被形成於至少一活動元件上方,以致於該活動元件之一部分係界於該撓取控制器之一部分及由移除該第一犧牲層而形成的一空腔之間;及移除該第一犧牲層以釋放該等活動元件且在該第一導電層與該等活動元件之間形成複數個具有不同深度之空腔。
- 如請求項1之方法,其進一步包含在該第一傳導層上方形成一介電層。
- 如請求項1至2中任一項之方法,其中該第一犧牲層的厚度在該複數個活動元件下方大體上相同。
- 如請求項1至2中任一項之方法,其進一步包含:在該等活動元件上方形成一第二犧牲層;在該第二犧牲層之至少一部分上方形成一機械層,其中該機械層附接至該等活動元件且由該複數個撓曲控制 器可操作地支撐;及移除該第二犧牲層。
- 如請求項4之方法,其中該第一犧牲層包含鉬及非晶矽中之一者,且移除該第一犧牲層包含將該第一犧牲層曝露於得自固態二氟化氙之氣體。
- 如請求項1至2中任一項之方法,其中該等撓曲控制器包含柱結構及鉚釘結構中之至少一者。
- 如請求項1至2中任一項之方法,其中形成該等撓曲控制器進一步包含形成具有接觸該等活動元件之不同大小部件之至少兩個類型的該等撓曲控制器。
- 如請求項4之方法,其中形成該等撓曲控制器進一步包含形成具有接觸該機械層之不同大小部件之至少兩個類型的該等撓曲控制器。
- 如請求項7之方法,其中該等不同大小部件包含具有柱結構之不同大小的翼部,其中在該第一犧牲層被移除前,該等翼部實質上平行於該基板及該等導電活動元件而延伸。
- 如請求項8之方法,其中該等不同大小部件包含具有鉚釘結構之不同大小的翼部,其中當形成且在移除該第一犧牲層之前,該等翼部實質上平行於該基板及該等導電活動元件而延伸。
- 一種製造至少兩個類型之干涉調變器之方法,該至少兩個類型之干涉調變器在移除一犧牲材料之後具有不同的空腔深度,該方法包含: 提供一基板;在該基板之至少一部分上方形成一光學堆疊;在該光學堆疊之至少一部分上方形成一犧牲材料,其中該犧牲材料係可移除的,以藉此形成空腔;在該犧牲材料之部分上方形成一第二導電層;在該基板上方形成至少兩個類型之撓曲控制器,該等撓曲控制器經組態以可操作地支撐該第二導電層,其中該至少兩個類型之撓曲控制器包含不同大小的組件,該等不同大小的組件經組態以在移除該第一犧牲層之後在該第二導電層之該等部分下方形成不同深度的空腔,其中至少一該等撓曲控制器之至少一部分係可操作支撐該導電層之一部分且位於其上;及移除該犧牲材料。
- 一種藉由如請求項1之方法而製造之干涉調變器。
- 一種包含如請求項12之干涉調變器之干涉調變器之陣列。
- 一種顯示裝置,其包含:如請求項13之干涉調變器之陣列;一處理器,其經組態以與該陣列通信,該處理器經組態以處理影像資料;及一記憶體裝置,其經組態以與該處理器通信。
- 如請求項14之顯示裝置,其進一步包含一驅動器電路,該驅動器電路經組態以將至少一指令發送至干涉調變器之該陣列。
- 如請求項15之顯示裝置,其進一步包含一控制器,該控制器經組態以將該影像資料之至少一部分發送至該驅動器電路。
- 如請求項14至16中任一項之顯示裝置,其進一步包含一影像源模組,該影像源模組經組態以將該影像資料發送至該處理器。
- 如請求項17之顯示裝置,其中該影像源模組包含一接收器、收發器及發射器中之至少一者。
- 如請求項14至16中任一項之顯示裝置,其進一步包含一輸入裝置,該輸入裝置經組態以接收輸入資料且將該輸入資料傳達至該處理器。
- 一種電機裝置,其包含:一基板;複數個活動元件,該複數個活動元件在該基板上方,每一活動元件藉由一空腔而與該基板分離;及複數個撓曲控制器,該複數個撓曲控制器在該基板上方,該複數個撓曲控制器經組態以可操作地支撐該等活動元件,其中該複數個撓曲控制器之至少一撓曲控制器之至少一部分係可操作地支撐該等活動元件之至少一活動元件且於其上方;其中該複數個撓曲控制器控制該複數個活動元件之該等所選擇之撓曲以在該基板與該複數個活動元件之間形成具有不同深度的複數個空腔。
- 如請求項20之電機裝置,其中該複數個撓曲控制器包含 不同尺寸之部分以控制該等所選擇之撓曲。
- 如請求項21之電機裝置,其中該等撓曲控制器之具有不同尺寸之該等部分包含不同厚度之該複數個撓曲控制器。
- 一種控制一在一包含一或多個薄膜層之裝置之兩個層之間的空腔的一深度之方法,該方法包含:提供一基板;在該基板之至少一部分上方形成一犧牲層;在該犧牲層之至少一部分上方形成一第一層;及在該基板上方形成一或多個撓曲控制器,該一個或多個撓曲控制器具有一個或多個翼部,該一個或多個撓曲控制器經組態以可操作地支撐該第一層且以在該基板與該第一層之間形成一空腔,其中該翼部被按尺寸切割以致於在移除該犧牲層之後,該空腔具有一深度大於該犧牲層之深度約30%或30%以上的一空腔,其中垂直於該基板而量測深度,其中該等撓曲控制器之至少一者之至少一部分係可操作地支撐該第一層之一部分且位於其上方。
- 如請求項23之方法,其中該等撓曲控制器包含柱結構及鉚釘結構中之至少一者。
- 如請求項24之方法,其中該等撓曲控制器包含一或多個柱結構及一或多個鉚釘結構,其中該柱結構及該鉚釘結構包含不同大小之翼部。
- 如請求項23至25中任一項之方法,其中該第一層為一活 動層。
- 一種電機微機電系統(MEMS)裝置,其包含:一基板;一活動元件,其在該基板上方;及一或多個撓曲控制器,其在該基板上方,該或該等撓曲控制器經組態以可操作地支撐該活動元件,且在該基板與該活動元件之間形成一空腔;其中該等撓曲控制器之至少一者之至少一部分係可操作地支撐該活動元件之至少一部分且位於其上方。
- 如請求項27之電機微機電系統(MEMS)裝置,其中該或該等撓曲控制器包含一或多個柱結構及一或多個鉚釘結構,其中該柱結構及該鉚釘結構包含接觸該活動元件之不同大小的部件。
- 一種干涉調變器,其包含:第一反射構件,其用於反射光;第二反射構件,其用於反射光;支撐構件,其用於支撐該第二反射構件,且在該第一反射構件與該第二反射構件之間形成一空腔;及其中該支撐構件之至少一部分係可操作地支撐該第二反射構件之至少一部分及位於其上方。
- 如請求項29之干涉調變器,其中該第一反射構件包含一部分反射層。
- 如請求項29至30中任一項之干涉調變器,其中該第二反射構件包含一活動反射層。
- 如請求項29至30中任一項之干涉調變器,其中該支撐構件包含一犧牲層。
- 如請求項29至30中任一項之干涉調變器,其中該支撐構件包含一柱結構及一鉚釘結構中之至少一結構。
- 一種控制一在一包含一或多個薄膜層之裝置之兩個層之間的空腔的一深度之方法,該方法包含:提供一基板;在該基板之至少一部分上方形成一犧牲層,該犧牲層可藉由蝕刻移除;在該犧牲層之至少一部分上方形成一薄膜層;及在該基板上方形成一或多個撓曲控制器,該一個或多個撓曲控制器經組態以可操作地支撐該薄膜層,且其中該翼部被按尺寸切割以在移除該犧牲層時使該薄膜層朝向該基板移位,其中該等撓曲控制器之至少一者之至少一部分係可操作地支撐該薄膜層之至少一部分及位於其上方。
- 一種機電裝置,其包含:一基板;一活動元件,其在該基板上方;及一或多個撓曲控制器,其在該基板上方,該或該等撓曲控制器經組態以可操作地支撐該活動元件使該活動元件朝向該基板移位;其中該等撓曲控制器之至少一者之至少一部分係可操作地支撐該活動元件之至少一部分且位於其上方。
- 一種干涉調變器,其包含:第一反射構件,其用於反射光;第二反射構件,其用於反射光;及支撐構件,其用於支撐該第二反射構件,且用於實現該第二反射構件朝向該第一反射構件之一移位;其中該支撐構件之至少一部分可操作地支撐該第二反射構件之至少一部分且位於其上方。
- 如請求項36之干涉調變器,其中該第一反射構件包含一部分反射層。
- 如請求項36至37中任一項之干涉調變器,其中該第二反射構件包含一活動反射層。
- 如請求項36至37中任一項之干涉調變器,其中該支撐構件包含一鉚釘結構。
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US20120122259A1 (en) | 2012-05-17 |
RU2484007C2 (ru) | 2013-06-10 |
US8102590B2 (en) | 2012-01-24 |
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CN101484381A (zh) | 2009-07-15 |
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TW200807061A (en) | 2008-02-01 |
JP5520898B2 (ja) | 2014-06-11 |
EP2157046A2 (en) | 2010-02-24 |
TW201418143A (zh) | 2014-05-16 |
KR20090033882A (ko) | 2009-04-06 |
JP5021736B2 (ja) | 2012-09-12 |
US7527998B2 (en) | 2009-05-05 |
CN101484381B (zh) | 2013-06-19 |
JP2009543121A (ja) | 2009-12-03 |
US20090213451A1 (en) | 2009-08-27 |
EP1943185A1 (en) | 2008-07-16 |
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