TWI414577B - 絕緣液態晶片接合劑及半導體裝置 - Google Patents

絕緣液態晶片接合劑及半導體裝置 Download PDF

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Publication number
TWI414577B
TWI414577B TW095128013A TW95128013A TWI414577B TW I414577 B TWI414577 B TW I414577B TW 095128013 A TW095128013 A TW 095128013A TW 95128013 A TW95128013 A TW 95128013A TW I414577 B TWI414577 B TW I414577B
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Taiwan
Prior art keywords
bonding agent
mass
component
wafer bonding
molecule
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TW095128013A
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English (en)
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TW200710193A (en
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Toyohiko Fujisawa
Yoshito Ushio
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Dow Corning Toray Co Ltd
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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Description

絕緣液態晶片接合劑及半導體裝置
本發明係關於一種使用用以將半導體晶片接合元件接合至半導體晶片之一有效表面之絕緣液態晶片接合劑，且亦關於使用上述晶片接合劑之半導體裝置。
為了在經由一絕緣液態晶片接合劑彼此接合之一半導體晶片與一晶片安裝元件之間提供絕緣狀況，或為了防止完成晶片接合後對半導體晶片的導線接合性造成損失，以往建議使用含有至少5質量%之絕緣晶粒的上述類型之接合劑，該等絕緣晶粒以諸如玻璃、金屬氮化物或金屬氧化物粒子之無機絕緣體形式製成，其中該等粒子具有介於50至100 μm範圍內之直徑(參見日本未審查專利申請公開案(下文中稱作"Kokai")第H7－14859號)。或者，上述絕緣液態晶片接合劑可由以下物質構成：一個分子中具有至少兩個烯基之有機聚矽氧烷；一個分子中具有至少兩個結合矽之氫原子的有機聚矽氧烷；具有結合矽之烷氧基的有機矽化合物；具有介於10至100 μm範圍內之直徑及介於1.0至1.5範圍內之大直徑與小直徑之比的有機或無機球形填充物粒子；及鉑或鉑型催化劑(參見Kokai H7－292343)。
為了在一半導體晶片及一晶片安裝元件之間提供絕緣狀況或為了防止晶片接合後對半導體晶片之導線接合性造成損失，上述絕緣液態晶片接合劑應含有相當硬的填充物。然而，若擬將該絕緣液態晶片接合劑用於將半導體安裝元件予以接合至一需經歷熱循環之倒裝型半導體裝置中的半導體晶片之一有效表面上，則上述半導體晶片之有效表面可能會損壞，且半導體裝置之可靠性可能會削減。
另一方面，此項技術中已知含有球形聚矽氧橡膠粒子之聚矽氧橡膠組合物(參見Kokai 2000－38510及Kokai 2003－292781)。在兩種情況下，該組合物皆含有導電金屬粒子。此等組合物不能與經導線接合之倒裝型半導體裝置結合使用(在該等半導體裝置中，半導體晶片安裝元件接合至半導體晶片之有效表面上)。
本文中，發明者試圖製備具有球形聚矽氧橡膠粒子之導電聚矽氧橡膠組合物作為絕緣晶片接合劑，而不使用導電金屬粒子。然而，當該接合劑在絲網印刷中在半導體晶片安裝元件之表面上使用時，聚矽氧橡膠組合物會流至經塗佈區域之周邊部分，由此導致接合襯墊的污染。此接著會削弱導線接合狀況，或會截獲在半導體晶片與晶片接合劑之間之介面上的空氣並由此促進空隙的形成。
本發明之一目的在於提供一種用於將半導體晶片接合元件予以接合至半導體晶片之一有效表面上的絕緣液態晶片接合劑，其不損壞該半導體晶片之有效表面，非常適用於絲網印刷，可對抗在該半導體晶片與該晶片接合劑之間的介面上形成空隙，且不損失其導線接合特性。本發明之另一目的在於提供一種高可靠性之半導體裝置。
用於將半導體晶片安裝元件予以接合至半導體晶片之一有效表面上的本發明之絕緣液態晶片接合劑包含：(A)100質量份混合物，包括(a－1)由式R1 3 SiO1 / 2 之矽氧烷單元、式R1 2 R2 SiO1 / 2 之矽氧烷單元及式SiO4 / 2 之矽氧烷單元(其中R1 為除烯基外之單價烴基，且R2 為烯基)構成之有機聚矽氧烷樹脂與(a－2)一個分子中具有至少兩個烯基之直鏈有機聚矽氧烷{(a－1)與(a－2)之質量比介於(30：70)至(60：40)範圍內}；(B)一個分子中具有至少兩個結合矽之氫原子的有機聚矽氧烷{此組份之用量使得此組份的結合矽之氫原子與組份(A)的1莫耳烯基之莫耳比在0.1莫耳至10莫耳範圍內}；(C)0.1至10質量份之一個分子中具有至少一個結合矽之烷氧基的有機矽化合物；(D)5至50質量份之絕緣球形聚矽氧橡膠粒子，其具有0.1至50 μm之平均直徑且具有等於或低於80的根據JIS K 6253之A型硬度計硬度；及(E)催化量之氫化矽烷化反應催化劑。
本發明之半導體裝置的特徵為：使用上述絕緣液態晶片接合劑將一半導體晶片安裝元件予以接合至該半導體晶片之有效表面上。
發明作用
本發明之晶片接合劑不損壞半導體晶片之有效表面，非常適用於絲網印刷，可對抗在半導體晶片與晶片接合劑之間的介面上形成空隙，且不損失其導線接合特性。
由於使用上述絕緣液態晶片接合劑，本發明之半導體裝置高度可靠。
以下為本發明之絕緣液態晶片接合劑之更詳細描述。
組份(A)為本發明之晶片接合劑的主要組份之一。其包含(a－1)具有烯基之有機聚矽氧烷樹脂與(a－2)一個分子中具有至少兩個烯基之直鏈有機聚矽氧烷的混合物。成份(a－1)具有樹脂狀分子結構且由以下各式所表示之矽氧烷單元構成：R1 3 SiO1 / 2 、R1 2 R2 SiO1 / 2 及SiO4 / 2 。在上述各式中，R1 為除烯基外之單價烴基。其可為(例如)甲基、乙基、丙基、丁基、戊基、己基、庚基或類似烷基、苯基、甲苯基、二甲苯基、萘基或類似芳基、苯甲基、苯乙基或類似芳烷基、氯甲基、3－氯丙基、3,3,3－三氟丙基或類似的經鹵素取代之烷基。在上述各式中，R2 表示烯基，諸如乙烯基、烯丙基、丁烯基、戊烯基、己烯基或庚烯基。
成份(a－1)之上述有機聚矽氧烷樹脂可由以下各式所表示之矽氧烷單元構成的有機聚矽氧烷共聚物表示：(CH3 )3 SiO1 / 2 、(CH3 )2 (CH2 ＝CH)SiO1 / 2 及SiO4 / 2 ；且可由以下各式所表示之矽氧烷單元構成的有機聚矽氧烷共聚物表示：(C6 H5 )(CH3 )2 SiO1 / 2 、(CH3 )2 (CH2 ＝CH)SiO1 / 2 及SiO4 / 2 。
成份(a－2)為具有直鏈分子結構之有機聚矽氧烷。成份(a－1)之烯基可由以下各基團例示：乙烯基、烯丙基、丁烯基、戊烯基、己烯基及庚烯基。最佳為乙烯基。關於上述烯基之結合位置並無特殊限制。舉例而言，其可位於分子末端及/或側分子鏈中。含於成份(a－2)中之除烯基外的結合矽之有機基團可由以下各基團表示：甲基、乙基、丙基、丁基、戊基、己基、庚基或類似烷基、苯基、甲苯基、二甲苯基、萘基或類似芳基、苯甲基、苯乙基或類似芳烷基、氯甲基、3－氯丙基、3,3,3－三氟丙基或類似的經鹵素取代之烷基。最佳為甲基及苯基。
以下為成份(a－2)之有機聚矽氧烷之特定實例：兩個分子末端經三甲基矽烷氧基封端之甲基乙烯基矽氧烷與二甲基矽氧烷之共聚物；兩個分子末端經三甲基矽烷氧基封端之甲基乙烯基聚矽氧烷；兩個分子末端經三甲基矽烷氧基封端之甲基苯基矽氧烷、甲基乙烯基矽氧烷與二甲基矽氧烷之共聚物；兩個分子末端經二甲基乙烯基矽烷氧基封端之二甲基聚矽氧烷；兩個分子末端經二甲基乙烯基矽烷氧基封端之甲基乙烯基聚矽氧烷；兩個分子末端經二甲基乙烯基矽烷氧基封端之甲基乙烯基矽氧烷與二甲基矽氧烷之共聚物；及兩個分子末端經二甲基乙烯基矽烷氧基封端之甲基苯基矽氧烷、甲基乙烯基矽氧烷與二甲基矽氧烷之共聚物。
關於25℃下成份(a－2)之黏度並無特殊限制，但推薦此黏度介於10 mPa．s至1,000,000 mPa．s範圍內，較佳在100 mPa．s至100，100mPa．s範圍內。若黏度低於推薦下限，則印花後所獲得之晶片接合劑應將流出周邊區域，污染導線接合襯墊，且由此削減導線接合品質。另一方面，若黏度超過推薦上限，則此將削減製造過程中所獲得之導線接合劑的可操作性。
組份(A)由以(30：70)至(60：40)之質量比混合之成份(a－1)及成份(a－2)組成。若成份(a－1)之質量比份額低於推薦下限，則此將削減經固化之晶片接合材料的物理強度。另一方面，若成份(a－1)之份額超過推薦上限，則此將顯著降低上述經固化之晶片接合材料的伸長率。
組份(B)為本發明之晶片接合劑之固化劑。此組份為一個分子中含有至少兩個結合矽之氫原子的有機聚矽氧烷。關於氫原子可結合至矽上之位置並無特殊限制。舉例而言，氫原子可位於分子末端及/或側分子鏈中。以下為可含於組份(B)中的結合矽之有機基團之特定實例：甲基、乙基、丙基、丁基、戊基、己基、庚基或類似烷基、苯基、甲苯基、二甲苯基、萘基或類似芳基、苯甲基、苯乙基或類似芳烷基、氯甲基、3－氯丙基、3,3,3－三氟丙基或類似的經鹵素取代之烷基。甲基及苯基為較佳。關於組份(B)之分子結構並無特殊限制。舉例而言，該組份可具有直鏈、分支鏈、環狀、網狀或部分分支之直鏈分子結構。直鏈結構為較佳。
以下為組份(B)之有機聚矽氧烷之特定實例：兩個分子末端經三甲基矽烷氧基封端之甲基氫聚矽氧烷；兩個分子末端經三甲基矽烷氧基封端之甲基氫矽氧烷與二甲基矽氧烷之共聚物；兩個分子末端經三甲基矽烷氧基封端之甲基苯基矽氧烷、甲基氫矽氧烷與二甲基矽氧烷之共聚物；兩個分子末端經二甲基氫矽烷氧基封端之二甲基聚矽氧烷；兩個分子末端經二甲基氫矽烷氧基封端之甲基苯基矽氧烷與二甲基矽氧烷之共聚物；兩個分子末端經二甲基氫矽烷氧基封端之甲基苯基聚矽氧烷；由以下各式所表示之矽氧烷單元構成的有機聚矽氧烷共聚物：R1 3 SiO1 / 2 、R1 2 HSiO1 / 2 及SiO4 / 2 ；由以下各式所表示之矽氧烷單元構成的有機聚矽氧烷共聚物：R1 2 HSiO1 / 2 及SiO4 / 2 ；由以下各式所表示之矽氧烷單元構成的有機聚矽氧烷共聚物：R1 HSiO2 / 2 、R1 SiO3 / 2 及HSiO3 / 2 ；或上述有機聚矽氧烷中之兩者或兩者以上之混合物。在上述各式中，R1 表示除烯基外之單價烴基，諸如甲基、乙基、丙基、丁基、戊基、己基、庚基或類似烷基、苯基、甲苯基、二甲苯基、萘基或類似芳基、苯甲基、苯乙基或類似芳烷基、氯甲基、3－氯丙基、3,3,3－三氟丙基或類似的經鹵素取代之烷基。
關於25℃下組份(B)之黏度並無特殊限制，但推薦此黏度介於1 mPa．s至500,000 mPa．s範圍內，較佳在5 mPa．s至100,000 mPa．s範圍內。若黏度低於推薦下限，則此將降低經固化之晶片接合材料的機械強度。另一方面，若黏度超過推薦上限，則此將削減製造過程中所獲得之導線接合劑的可操作性。
推薦以某一量添加組份(B)，該量使得對於組份(A)中之每1莫耳烯基而言，此組份的結合矽之氫原子構成0.1莫耳至10莫耳，較佳為0.1莫耳至5莫耳，且甚至更佳為0.1莫耳至3莫耳。若對於組份(A)中之每1莫耳烯基而言，組份(B)的結合矽之氫原子的量低於推薦下限，則將難以提供所獲得之晶片接合劑的充分固化。另一方面，若超過推薦上限，則隨著時間流逝，經固化之晶片接合材料的物理特性將改變。
組份(C)用於改良由本發明之晶片接合劑所獲得之固化體的黏著。組份(C)為一個分子中含有至少一個結合矽之烷氧基的有機矽化合物。以下為構成組份(C)之有機矽化合物的特定實例：四甲氧基矽烷、四乙氧基矽烷、二甲基二甲氧基矽烷、甲基苯基二甲氧基矽烷、甲基苯基二乙氧基矽烷、苯基三甲氧基矽烷、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙烯基三甲氧基矽烷、烯丙基三甲氧基矽烷、烯丙基三乙氧基矽烷、3－縮水甘油氧基丙基三甲氧基矽烷、3－甲基丙烯醯氧基丙基三甲氧基矽烷及由以下各式所表示之矽化合物： (在上述各式中，"a"及"b"為等於或大於1的整數)。在上述內容之中，固化體中之最佳黏結強度係使用一個分子中含有至少一個結合矽之烷氧基及至少一個結合矽之烯基或結合矽之氫原子的組份(C)之有機矽化合物獲得。
組份(C)以每100份組份(A)0.1至10質量份、較佳0.5至3.0質量份的量添加。若組份(C)以小於推薦下限的量添加，則所獲得之經固化之晶片接合材料將具有不充分的黏結強度。另一方面，若組份(C)以超過推薦上限的量添加，則此將削減所獲得之晶片接合劑的儲存穩定性。
組份(D)用於調節晶片接合劑的黏度及搖變減黏特性以使其適用於絲網印刷。該組份含有具絕緣特性之球形聚矽氧橡膠粒子，該等粒子充當軟性填充物且降低損壞半導體晶片之有效表面的風險。上述組份(D)之粒子之平均直徑在0.1至50 μm範圍內，較佳在1至30 μm範圍內。若粒子之平均直徑低於推薦下限，則在使用所獲得之晶片接合劑接合之半導體晶片與晶片安裝元件之間的介面上可能出現空隙。另一方面，若組份(D)之添加量超過推薦上限，則此將削減在完成接合劑的製備後在將雜質自晶片接合劑移除之階段中的過濾性。當組份(D)以一聚集狀態添加時常獲得較好結果。此係由於聚集之絕緣球形聚矽氧橡膠粒子在晶片接合劑中保持其內聚狀態，且此狀態降低損壞半導體晶片之有效表面的風險。推薦聚集晶粒之平均直徑在1至100 μm範圍內，較佳為1至50 μm。聚集晶粒之平均直徑藉由以下步驟確定：將聚矽氧橡膠晶粒浸入甲醇中；藉由採用超音波能將其分散；且接著使用粒徑分佈量測儀量測尺寸。為防止組份(D)損壞半導體晶片之有效表面，組份(D)應具有等於或低於80、較佳等於或低於50的根據JIS K 6253－1997(用於硫化橡膠或熱塑性橡膠之硬度測試方法)之硬度計－A硬度。
具有該等特徵之組份(D)可由下述方法製備。舉例而言，在0℃至25℃之溫度下在水中將液態聚矽氧橡膠組合物用一表面活性劑乳化以製備水性乳液。在等於或高於25℃之溫度下將所獲得之乳液分散於水中，且將所獲得之液態聚矽氧橡膠組合物凝固以在水性懸浮液中形成粒子(參見Kokai S62－243621及美國專利4,742,142)。根據另一方法，藉由以下步驟製備粒子：自一個分子中具有至少兩個結合矽之羥基的有機聚矽氧烷、一個分子中具有至少兩個結合矽之氫原子的有機聚矽氧烷、固化促進劑及一個分子中具有至少一個不飽和烴基的環氧基化合物製備聚矽氧橡膠組合物；在表面活性劑之水溶液中乳化所獲得之組合物；使乳液與高溫液體或氣體接觸；且在水性懸浮液中將聚矽氧橡膠組合物固化成微粒形式(參見Kokai S64－56735及美國專利第4,849,564號)。另一方法由以下步驟組成：自一個分子中具有至少兩個烯基的有機聚矽氧烷及一個分子中具有至少兩個結合矽之氫原子的有機聚矽氧烷製備聚矽氧橡膠組合物；在表面活性劑之水溶液中乳化所獲得之組合物；添加鉑型催化劑；及藉由固化所獲得之聚矽氧橡膠組合物而回收水性懸浮液形式之粒子(參見Kokai H10－298302及美國專利第5,969,039號)。又一方法由以下步驟組成：自一個分子中含有至少兩個矽烷醇基之有機聚矽氧烷及交聯劑製備可縮合固化的聚矽氧橡膠組合物；在表面活性劑之水溶液中乳化所獲得之組合物；添加在表面活性劑之水溶液中所乳化之縮合反應型催化劑；及將聚矽氧橡膠組合物微粒化以製備聚矽氧橡膠粒子之水性懸浮液(參見Kokai 2001－240679)。藉由使上述懸浮液經歷均一噴霧乾燥而自該懸浮液獲得球形聚矽氧橡膠粒子，將所獲得之球形聚矽氧橡膠粒子在水中或鹼性水溶液中攪拌，移除水，將粒子在水中再次攪拌，移除水(例如在離心分離器中)，且若需要，則將粒子在低級醇之水溶液中攪拌，在離心分離器或類似設備中移除醇，且將產物乾燥。根據另一方法，將上述聚矽氧橡膠粒子之懸浮液過濾，回收球形粒子，將粒子在水中或鹼性水溶液中再次攪拌，移除水，將產物在水中再次攪拌，藉由離心分離移除水，且若需要，則將產物在低級醇溶液中攪拌，藉由離心分離醇，且藉由將產物在乾燥器中乾燥而獲得最終粉末。
推薦以每100質量份之組份(A)5至50質量份、較佳15至40質量份的量添加組份(D)。若組份(D)以小於推薦上限的量添加，則由於組合物的過度擴散可能引起導線接合襯墊的污染。另一方面，若組份(D)的添加量超過推薦上限，則組合物將獲得過度搖變減黏性，且此將促進半導體晶片與晶片接合劑之間之介面中的空隙形成。
組份(E)為用於促進晶片接合劑固化之氫化矽烷化反應催化劑。組份(E)可包含鉑型催化劑、銠型催化劑或鈀型催化劑，其中鉑型催化劑為較佳。上述鉑型催化劑可由以下各物表示：細鉑粉末、鉑黑、披鉑之細粉狀矽石載體、披鉑之活性碳載體、氯鉑酸、四氯化鉑、氯鉑酸之醇溶液、鉑－烯烴錯合物、鉑與二乙烯基四甲基二矽氧烷或類似烯基矽氧烷之錯合物、含有粒子直徑不超過10 μm之上述鉑或鉑型化合物的聚苯乙烯樹脂、耐綸(nylon)樹脂、聚碳酸酯樹脂、聚矽氧樹脂或類似熱塑性樹脂粉末。
組份(E)應以催化量使用。然而，根據含於組份(E)中之金屬催化劑的質量單位，推薦以0.1 ppm至500 ppm、較佳1 ppm至50 ppm的量添加組份(E)。若組份(E)以低於推薦下限的量添加，則此將顯著延緩所獲得之晶片接合劑的固化速度。另一方面，若添加量超過推薦上限，則將無法引起固化速度的顯著加快，但此方法在經濟上將變得不合理。
本發明之晶片接合劑藉由均勻混合組份(A)－(E)來製備。本發明之晶片接合劑在25℃下具有100 Pa．s至500 Pa．s、較佳150 Pa．s至300 Pa．s之黏度。若晶片接合劑具有低於推薦下限之黏度，則可能引起由所塗佈之接合劑的擴散所引起之導線接合襯墊的污染。另一方面，若黏度超過推薦上限，則將引起空隙的形成。
在不與本發明之目的相矛盾的限制中，組合物可包括諸如需要用於改良所獲得之接合劑之儲存穩定性及可操作性的固化抑制劑之任意組份。該固化抑制劑之實例如下：2－甲基－3－丁炔－2－醇、3,5－二甲基－1－己炔－3－醇、苯基丁炔醇或類似烷基醇、3－甲基－3－戊烯－1－炔、3,5－二甲基－3－己烯－1－炔或類似烯炔化合物、1,3,5,7－四甲基－1,3,5,7－四乙烯基環四矽氧烷、1,3,5,7－四甲基－1,3,5,7－四己烯基環四矽氧烷及苯并三唑。根據質量單位，應以10 ppm至50,000 ppm的量將該等固化抑制劑添加至本發明之晶片接合劑中。若需要，則在不損害本發明之目的的限制中，組合物亦可含有諸如顏料、耐熱劑、阻燃劑等之其他任意添加劑。
接著，將參看附隨圖式來詳細描述本發明之半導體裝置。如圖1所示，本發明之半導體裝置為其中一半導體晶片安裝元件2借助於上述晶片接合劑之一固化體3接合至一半導體晶片1之一有效表面的裝置。在該裝置中，半導體晶片1可包含一在矽基板或鎵－砷基板上之電子電路，且半導體安裝元件2(稱作"突出部")由銅、鐵合金或類似合金製成。在圖1之實施例中，上述半導體晶片安裝元件展示為一電路板。該電路板可包含一陶瓷或玻璃基板，在該基板之表面上由諸如金、銀、銅或類似金屬形成配線。此外，電路板可在其表面上支撐多個電容器、電阻器、線圈或其他電力元件。
本發明之半導體裝置經由以下步驟形成：藉由上述晶片接合劑將半導體晶片安裝元件附著於半導體晶片1之有效表面上；加熱所獲得之單元以形成接合劑之一固化體3；且接著藉由使用由金、銅、鋁或其他金屬製成之晶片接線6進行晶片接合操作，該等晶片接線6藉由接合襯墊5將安裝於半導體晶片1之有效表面上的裝置之中心部分中的接合襯墊4連接至電路板。大體而言，藉由超音波壓縮接合方法、熱壓接合方法、超音波熱壓接合方法等進行使用接線6之導線接合。舉例而言，經由上述晶片接合劑之固化體3藉由上述晶片接合劑將半導體晶片安裝元件2接合至半導體晶片1之有效表面上可藉由以下兩種方法進行：將晶片接合劑塗佈於半導體晶片安裝元件2上，且接著將半導體晶片1接合至該晶片接合劑上；或將晶片接合劑塗佈於半導體晶片1上，且接著將半導體晶片安裝元件2置於半導體晶片1上，且藉由加熱來固化晶片接合劑。關於可將晶片接合劑固化之溫度並無特殊限制。舉例而言，溫度可在100℃至250℃範圍內，較佳在150℃至250℃範圍內。此外，若需要，則在半導體晶片之導線接合完成後，可用凝膠狀或橡膠狀聚矽氧塗佈劑塗佈半導體晶片1之表面。若需要，則可用環氧樹脂密封劑密封半導體晶片。
實例
本發明將進一步參考絕緣液態晶片接合劑及半導體裝置之實施實例及對照實例進行更詳細地描述。在25℃下量測黏度值。以下方法用於確定晶片接合劑及半導體裝置之特徵。
[量測晶片接合劑之黏度及搖變減黏性]
藉由E型旋轉黏度計(Model DVU－EII,Tokimec Co.,Ltd之產品)，在0.5 rpm之旋轉速度下量測晶片接合劑之黏度。使用上述旋轉型黏度計，藉由確定0.5 rpm之旋轉速度下的黏度(與2.5 rpm之旋轉速度相比較)來量測晶片接合劑之搖變減黏特性，且基於所獲得之資料來確定搖變減黏性指數。
[評估空隙]
藉由以具有50 μm厚度且佔據8 mm×8 mm區域的塗層形式進行絲網印刷而將晶片接合劑塗佈於聚醯胺薄膜上。選擇具有18 mm×18 mm尺寸及150 μm厚度的透明玻璃板以與半導體晶片結合使用，且對其進行塗佈，並將晶片接合劑壓縮至25 μm之厚度。在200℃下將該單元加熱1 min，由此將晶片接合劑固化，且藉由觀測玻璃板一側之介面來檢驗玻璃板與經固化之晶片接合劑之間的介面上之空隙(氣泡)的存在。
[評估半導體裝置之製造及接合性]
將半導體晶片之有效表面附著於支撐上述半導體晶片安裝元件之聚醯胺薄膜電路板之後表面上，且接著在200℃下將該單元加熱1 min，由此將晶片接合劑固化。此後，借助於接線將位於半導體晶片之有效表面中心之接合襯墊導線接合至安裝於聚醯胺薄膜電路板之邊緣上的接合襯墊上。藉由超音波熱壓方法(接合溫度：160℃至250℃；負荷：30 mg至100 mg/每根導線)進行接線之導線接合。在顯微鏡下觀測接線及接合襯墊之狀況或接線及接合襯墊頸部之形狀。在拉伸接線時觀測接線之接合狀況，且根據與接線總數相比之不合格接線的百分數來判定導線接合性。
[半導體裝置之操作故障的百分數]
使經測試之半導體裝置經歷100次熱循環，其中每次循環由在－25℃下歷經15 min及在＋120℃下歷經15 min組成。此後，將經測試之裝置自熱循環腔室移除，且確定操作故障之百分數。
[實施實例1]
有機聚矽氧烷混合物由以下物質製備：40質量份之由式(CH3 )3 SiO1 / 2 之矽氧烷單元、式(CH3 )2 (CH2 ＝CH)SiO1 / 2 之矽氧烷單元及矽氧烷單元SiO4 / 2 構成的有機聚矽氧烷樹脂(乙烯基含量＝2.01質量%)；及60質量份之兩個分子末端經二甲基乙烯基矽烷氧基封端且具有2,000 mPa．s黏度的二甲基聚矽氧烷(乙烯基含量＝0.23質量%)。將該混合物與20質量份之平均直徑為2 μm、聚集粒子平均直徑等於15 μm且A型硬度計硬度為30之球形聚矽氧橡膠粒子組合。在室溫下，將該等組份混合30 min。由此獲得均一膏狀化合物。將該化合物進一步與以下物質組合：3.5份之兩個分子末端經三甲基矽烷氧基封端且具有20 mPa．s黏度的甲基氫聚矽氧烷(結合矽之氫原子的含量＝1.5質量%)(在本發明之甲基氫聚矽氧烷中，結合矽之氫原子的含量對於上述有機聚矽氧烷混合物中之每1莫耳乙烯基而言為1.5莫耳)；1重量份之下式之有機矽化合物： 及0.13質量份之苯基丁炔醇。在室溫下將該等組份混合10 min，且藉由添加0.45質量份之鉑與1,3－二乙烯基四甲基二矽氧烷之錯合物(其中根據質量單位，晶片接合劑中之金屬鉑的含量為5 ppm)且在室溫下將產物混合30 min來製備絕緣液態晶片接合劑。檢驗所獲得之晶片接合劑的特性，且亦評估使用上述晶片接合劑所製造之半導體裝置的特徵。結果示於表1中。
[實施實例2]
有機聚矽氧烷混合物由以下物質製備：45質量份之由式(CH3 )3 SiO1 / 2 之矽氧烷單元、式(CH3 )2 (CH2 ＝CH)SiO1 / 2 之矽氧烷單元及矽氧烷單元SiO4 / 2 構成的有機聚矽氧烷樹脂(乙烯基含量＝2.01質量%)；及55質量份之兩個分子末端經二甲基乙烯基矽烷氧基封端且具有2,000 mPa．s之黏度的二甲基聚矽氧烷(乙烯基含量＝0.23質量%)。將該混合物與10質量份之平均直徑為2 μm、聚集粒子平均直徑等於15 μm且A型硬度計硬度為30之球形聚矽氧橡膠粒子組合。在室溫下，將該等組份混合30 min。由此獲得均一膏狀化合物。將該化合物進一步與以下物質組合：3.5份之兩個分子末端經三甲基矽烷氧基封端且具有20 mPa．s之黏度的甲基氫聚矽氧烷(結合矽之氫原子的含量＝1.5質量%)(在本發明之甲基氫聚矽氧烷中，結合矽之氫原子的含量對於上述有機聚矽氧烷混合物中之每1莫耳乙烯基而言為1.4莫耳)；1重量份之下式之有機矽化合物： 及0.13質量份之苯基丁炔醇。在室溫下將該等組份混合10 min，且藉由添加0.45質量份之鉑與1,3－二乙烯基四甲基二矽氧烷之錯合物(其中根據質量單位，晶片接合劑中之金屬鉑的含量為5 ppm)且在室溫下將產物混合30 min來製備絕緣液態晶片接合劑。檢驗所獲得之晶片接合劑的特性，且亦評估使用上述晶片接合劑所製造之半導體裝置的特徵。結果示於表1中。
[實施實例3]
有機聚矽氧烷混合物由以下物質製備：35質量份之由式(CH3 )3 SiO1 / 2 之矽氧烷單元、式(CH3 )2 (CH2 ＝CH)SiO1 / 2 之矽氧烷單元及矽氧烷單元SiO4 /2 構成的有機聚矽氧烷樹脂(乙烯基含量＝2.01質量%)；及65質量份之兩個分子末端經二甲基乙烯基矽烷氧基封端且具有40,000 mPa．s之黏度的二甲基聚矽氧烷(乙烯基含量＝0.08質量%)。將該混合物與20質量份之平均直徑為2 μm、聚集粒子平均直徑等於15 μm且A型硬度計硬度為30之球形聚矽氧橡膠粒子組合。在室溫下，將該等組份混合30 min。由此獲得均一膏狀化合物。將該化合物進一步與以下物質組合：3.5份之兩個分子末端經三甲基矽烷氧基封端且具有20 mPa．s之黏度的甲基氫聚矽氧烷(結合矽之氫原子的含量＝1.5質量%)(在本發明之甲基氫聚矽氧烷中，結合矽之氫原子的含量對於上述有機聚矽氧烷混合物中之每1莫耳乙烯基而言為1.9莫耳)；1重量份之下式之有機矽化合物： 及0.13質量份之苯基丁炔醇。在室溫下將該等組份混合10 min，且藉由添加0.45質量份之鉑與1,3－二乙烯基四甲基二矽氧烷之錯合物(其中根據質量單位，晶片接合劑中之金屬鉑的含量為5 ppm)且在室溫下將產物混合30 min來製備絕緣液態晶片接合劑。檢驗所獲得之晶片接合劑的特性，且亦評估使用上述晶片接合劑所製造之半導體裝置的特徵。結果示於表1中。
[對照實例1]
以與實施實例1相同之方式製備絕緣液態晶片接合劑，除了使用100質量份之兩個分子末端經二甲基乙烯基矽烷氧基封端且具有2000 mPa．s之黏度的二甲基聚矽氧烷(乙烯基含量＝0.23質量%)來替代100質量份之實施實例1之混合物，該混合物由以下物質構成：40質量份之由式(CH3 )3 SiO1 / 2 之矽氧烷單元、式(CH3 )2 (CH2 ＝CH)SiO1 / 2 之矽氧烷單元及矽氧烷單元SiO4 / 2 構成的有機聚矽氧烷樹脂(乙烯基含量＝2.01質量%)；及60質量份之兩個分子末端經二甲基乙烯基矽烷氧基封端且具有2,000 mPa．s之黏度的二甲基聚矽氧烷(乙烯基含量＝0.23質量%)。對照實例1之組合物亦含有兩個分子末端經三甲基矽烷氧基封端且具有20 mPa．s之黏度的甲基氫聚矽氧烷(結合矽之氫原子的含量＝1.5質量%)(在本發明之甲基氫聚矽氧烷中，結合矽之氫原子的含量對於上述二甲基聚矽氧烷中之每1莫耳乙烯基而言為1.6莫耳)。檢驗所獲得之晶片接合劑的特性，且亦評估使用上述晶片接合劑所製造之半導體裝置的特徵。結果示於表1中。
[對照實例2]
以與對照實例1相同之方式製備絕緣液態晶片接合劑，除了使用60質量份之量的球形聚矽氧橡膠粒子。檢驗所獲得之晶片接合劑的特性，且亦評估使用上述晶片接合劑所製造之半導體裝置的特徵。結果示於表1中。
[對照實例3]
在實施實例1之組合物中，有機聚矽氧烷混合物由以下物質製備：70質量份之由式(CH3 )3 SiO1 / 2 之矽氧烷單元、式(CH3 )2 (CH2 ＝CH)SiO1 / 2 之矽氧烷單元及矽氧烷單元SiO4 / 2 構成的有機聚矽氧烷樹脂(乙烯基含量＝2.01質量%)；及30質量份之兩個分子末端經二甲基乙烯基矽烷氧基封端且具有2,000 mPa．s之黏度的二甲基聚矽氧烷(乙烯基含量＝0.23質量%)。然而，不能使該混合物均一化，且不能製備均質晶片接合劑。
工業應用性
由於本發明之絕緣液態晶片接合劑未損壞半導體晶片之有效表面，非常適用於絲網印刷，對抗在半導體晶片與晶片接合劑之間的介面上形成空隙，且不損失其導線接合特性，因此其能夠改良半導體裝置之可靠性。
1．．．半導體晶片
2．．．由聚醯亞胺薄膜所製造之電路板
3．．．絕緣液態晶片接合劑之固化體
4．．．接合襯墊
5．．．接合襯墊
6．．．金屬接線
圖1為根據本發明所製造之一半導體裝置之剖視圖。
1．．．半導體晶片
2．．．由聚醯亞胺薄膜所製造之電路板
3．．．絕緣液態晶片接合劑之固化體
4．．．接合襯墊
5．．．接合襯墊
6．．．金屬接線

Claims (3)

  1. 一種絕緣液態晶片接合劑，其用於將一半導體晶片安裝元件予以接合至一半導體晶片之一有效表面上，該劑包含：(A)100質量份之混合物，包括(a-1)由式R1 3 SiO1/2 之矽氧烷單元、式R1 2 R2 SiO1/2 之矽氧烷單元及式SiO4/2 之矽氧烷單元(其中R1 為除烯基外之單價烴基，且R2 為烯基)構成的有機聚矽氧烷樹脂與(a-2)一個分子中具有至少兩個烯基之直鏈有機聚矽氧烷{(a-1)與(a-2)之質量比在(30：70)至(60：40)範圍內}；(B)一個分子中具有至少兩個結合矽之氫原子的有機聚矽氧烷{此組份之用量使得此組份之結合矽之氫原子與組份(A)之1莫耳烯基的莫耳比在0.1至10範圍內}；(C)0.1至10質量份之一個分子中具有至少一個結合矽之烷氧基的有機矽化合物；(D)5至50質量份之絕緣球形聚矽氧橡膠粒子，其具有0.1至50 μm之平均直徑且具有等於或低於80的根據JIS K 6253之A型硬度計硬度，而且以平均直徑為1至100 μm聚集成粒子聚集體；及(E)根據本組份中所含金屬催化劑的質量單位為0.1至500 ppm之氫化矽烷化反應催化劑。
  2. 如請求項1之絕緣液態晶片接合劑，其在25℃下具有100至500 Pa．s之黏度。
  3. 一種半導體裝置，其中半導體晶片安裝元件係藉由使用 如請求項1或2之絕緣液態晶片接合劑接合至半導體晶片之一有效表面。
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US20090263936A1 (en) 2009-10-22
US7897717B2 (en) 2011-03-01
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