TWI401756B - 壓接裝置及構裝方法 - Google Patents
壓接裝置及構裝方法 Download PDFInfo
- Publication number
- TWI401756B TWI401756B TW096101219A TW96101219A TWI401756B TW I401756 B TWI401756 B TW I401756B TW 096101219 A TW096101219 A TW 096101219A TW 96101219 A TW96101219 A TW 96101219A TW I401756 B TWI401756 B TW I401756B
- Authority
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- Taiwan
- Prior art keywords
- pressing
- head
- rubber
- base
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 13
- 238000003825 pressing Methods 0.000 claims description 176
- 238000002788 crimping Methods 0.000 claims description 136
- 229920001971 elastomer Polymers 0.000 claims description 86
- 239000005060 rubber Substances 0.000 claims description 84
- 239000000758 substrate Substances 0.000 claims description 61
- 230000001681 protective effect Effects 0.000 claims description 38
- 230000000903 blocking effect Effects 0.000 claims description 28
- 230000006835 compression Effects 0.000 claims description 28
- 238000007906 compression Methods 0.000 claims description 28
- 238000007789 sealing Methods 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 description 23
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000013013 elastic material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010616 electrical installation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B30—PRESSES
- B30B—PRESSES IN GENERAL
- B30B15/00—Details of, or accessories for, presses; Auxiliary measures in connection with pressing
- B30B15/02—Dies; Inserts therefor; Mounting thereof; Moulds
- B30B15/022—Moulds for compacting material in powder, granular of pasta form
- B30B15/024—Moulds for compacting material in powder, granular of pasta form using elastic mould parts
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B30B—PRESSES IN GENERAL
- B30B5/00—Presses characterised by the use of pressing means other than those mentioned in the preceding groups
- B30B5/02—Presses characterised by the use of pressing means other than those mentioned in the preceding groups wherein the pressing means is in the form of a flexible element, e.g. diaphragm, urged by fluid pressure
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Description
本發明係有關一種用以將電氣零件構裝於基板的壓接裝置及其構裝方法。
以往,在將例如半導體元件的電氣零件連接於基板的構裝步驟中,使用壓接裝置,邊以按壓頭將電氣零件按壓於基板邊進行加熱。
第18(a)圖的符號101係表示習知技術之壓接裝置,壓接裝置101具有底座126及按壓頭120。
按壓頭120有:將按壓橡膠嵌入金屬框而構成者、以黏著劑將按壓橡膠黏貼於金屬板而構成者、使液狀橡膠流入金屬框且於金屬框內使橡膠硬化而構成者等。
針對將按壓橡膠122嵌入金屬框構成的頭本體121者加以說明,使按壓橡膠122的表面與頭本體121的表面形成相同高度,或較頭本體121的表面更下方突出,若將按壓頭120按壓於底座126上的壓接對象物110,按壓橡膠122的表面即接觸壓接對象物110。
壓接對象物110,具有基板111、配置於基板111上且厚度不同的電氣零件116、118,因電氣零件116、118的厚度差於基板111上形成段差。
按壓橡膠122由一施力即變形的彈性材料構成,雖然按壓橡膠122先接觸最厚的電氣零件116,惟按壓橡膠122產生變形,而自厚的電氣零件116至薄的電氣零件118依序接觸,結果,按壓橡膠122會按壓所有的電氣零件116、118。
在以壓接裝置101按壓電氣零件116、118前,進行電氣零件116、118與基板111的對位,電氣零件116、118的端子隔著黏著劑115而位於基板111的端子的正上方。
由於底座126的表面大致水平,基板111水平配置於此表面,若使按壓頭120往垂直下方移動而按壓電氣零件116、118,電氣零件116、118即推開黏著劑115而往正下方移動,故構裝電氣零件116、118的端子與基板111的端子接觸,而使電氣零件116、118與基板111形成電氣連接(第18(b)圖)。如此,習知壓接裝置101可同時將厚度不同的電氣零件連接於一片基板。
可是,按壓橡膠122,具有於按壓電氣零件116、118時若凹陷,其周圍即藉其反作用力而膨脹的性質,按壓橡膠122的膨脹部分會越過頭本體121的框,而使按壓橡膠122的表面往水平方向擴展。
第19圖係表示按壓橡膠122的表面往水平方向擴展的情形的俯視圖,按壓橡膠122以其平面形狀的中心C為中心,往輻射方向流動。由於相較於按壓橡膠122的中心C附近,於端部移動量較多,故按壓橡膠122的端部所壓緊的電氣零件116、118會隨著按壓橡膠122的擴展而往水平方向移動,使構裝電氣零件116、118的端子偏離基板111的正上方位置。
當發生電氣零件116、118的位置偏移時,電氣零件116、118的端子與基板111的端子即不接觸,而使電氣零件116、118與基板111的連接可靠性降低。
[專利文獻1]日本特開2002-359264號公報[專利文獻2]日本特開2005-32952號公報
本發明係為解決上述問題而完成者,其目的在於提供一種可將電氣零件與基板確實連接的壓接裝置。
為解決上述問題,本發明之壓接裝置,係具有底座及按壓頭;相對移動前述按壓頭及前述底座,俾以前述按壓頭按壓配置於前述底座的或置面上的壓接對象物,其特徵在於:前述按壓頭具有頭本體及配置於前述頭本體的按壓橡膠,於前述按壓橡膠周圍配置較前述按壓橡膠表面高度為高的圍阻構件,前述按壓橡膠係邊變形邊按壓配置於前述底座上的壓接對象物。
本發明之壓接裝置,前述底座係插入前述圍阻構件所圍成的空間內。
本發明之壓接裝置,前述圍阻構件可與前述頭本體分離。
本發明之壓接裝置,係具有底座及按壓頭;相對移動前述按壓頭及前述底座,俾以前述按壓頭按壓配置於前述底座的或置面上的壓接對象物,其特徵在於:前述按壓頭具有頭本體及配置於前述頭本體的按壓橡膠;前述或置面被表面高度較其為高的圍阻構件所圍繞。
本發明之壓接裝置,前述按壓頭係插入前述圍阻構件所圍成的空間內。
本發明之壓接裝置,前述圍阻構件可與前述底座分離。
本發明之壓接裝置,係於前述按壓橡膠與前述頭本體間配置可壓縮變形的壓縮構件;至少於前述壓縮構件壓縮時,前述圍阻構件的高度較前述按壓橡膠的表面高度為高。
本發明之構裝方法,係將基板上配置有複數個高度不同的零件的壓接對象物配置於底座的或置面上,藉設於按壓頭的按壓橡膠按壓前述零件,以將前述零件固定於基板,其特徵在於:當前述按壓橡膠按壓前述零件時,以圍阻構件圍繞前述壓接對象物周圍,俾以前述圍阻構件攔阻因前述按壓橡膠變形所造成的橫流。
本發明之構裝方法,係於前述零件與前述基板間配置異向導電性膜,在將前述零件黏著於前述基板後,邊對前述基板加熱邊藉前述按壓橡膠按壓。
本發明之構裝方法,當按壓前述零件時,於前述按壓橡膠與前述壓接對象物間配置有可自前述異向導電性膜剝離的保護膜。
於按壓橡膠壓緊壓接對象物時,由於藉圍阻構件防止橫向擴展,故即使是按壓橡膠的端部,仍不易造成電氣零件的位置偏移。又,若按壓橡膠不橫向擴展,由於造成按壓橡膠變形的大部分力量即成為按壓壓接對象物的力量,故按壓時不會有按壓力浪費的情況發生。
第1圖的符號1係表示本發明壓接裝置之第一例,此壓接裝置1,具有作業台9、驅動裝置25、按壓頭20及底座26。按壓頭20,具有頭本體21、圍阻構件24及壓接部22。
此處,頭本體21係金屬製板狀,在按壓後述壓接對象物10時不變形。壓接部22由內部材質均一的彈性材料(例如橡膠)構成,壓接部22異於鐵等金屬材料,一施力即變形,在除去力量時則恢復為原來形狀。
壓接部22固定於頭本體21的表面,按壓頭20使壓接部22面向下方且配置於作業台9的上方位置。
按壓頭20連接於驅動裝置25,若使驅動裝置25動作,按壓頭20則使壓接部22的露出面向下側,於作業台9上沿垂直方向上下移動。
此處,頭本體21的平面形狀呈四角形,壓接部22形成為四角柱。頭本體21的大小較壓接部22為大,於較頭本體21的壓接部22更外側露出的部分,以圍繞壓接部22的方式配置筒狀圍阻構件24。
此處,圍阻構件24與頭本體21皆係金屬製,且此處,圍阻構件24固定於頭本體21。圍阻構件24的前端部分自壓接部22的表面突出,形成以圍阻構件24的內周側面為側面,以壓接部22的表面為底面的凹部29。
圍阻構件24的內周側面相對於水平面呈大致垂直,壓接部22的表面呈大致水平。又,圍阻構件24前端自壓接部22表面算起的高度均一。因此,圍阻構件24前端所構成的開口23位於水平面內,其形狀與凹部29的底面形狀皆為四角形。在此,底座26係四角柱,其一底面密合作業台9表面,立設配置於作業台9上。
底座26的另一底面係或置後述壓接對象物的或置面27,此或置面27與作業台9的表面平行,因此,或置面27呈大致水平。載置面27的形狀與凹部29的開口23的形狀相同,或略小於凹部29的開口23的相似形狀(第2圖),可將底座26之載置面27所處的部分插入凹部29內。
其次,針對使用此壓接裝置1將例如半導體元件的電氣零件連接於基板的步驟加以說明。第3(a)圖的符號10係表示壓接對象物,壓接對象物10,具有基板11、異向導電性膜15及電氣零件16、18。
異向導電性膜15配置於基板11的端子12上,電氣零件16、18配置於異向導電性膜15之與基板11相反側的面上。
電氣零件16、18具有突塊或焊墊等端子17、19,各電氣零件16、18的端子17、19配置成位於基板11的端子12上。
各電氣零件16、18以未圖示的裝載頭分別裝載於異向導電性膜15後,邊以較低溫進行預熱邊藉裝載頭以小的壓力按壓,且藉異向導電性膜15所產生的黏著力暫時黏著於基板11(假壓接)。然而,假壓接時的黏著力弱,電氣零件16、18容易自基板11脫落,又,基板11的端子12與電氣零件16、18的端子17、19既不形成物理性亦不形成機械性接觸,於其間有異向導電性膜15。
基板11未配置電氣零件16、18的一面呈平坦,壓接對象物10以該平坦面密合於載置面27而載置於底座26上。
異向導電性膜15形成的較電氣零件16、18大,一部分自電氣零件16、18突出,而露出於電氣零件16、18間。又,即使在異向導電性膜15不自電氣零件16、18露出情況下,於後述之按壓時,異向導電性膜15仍會被按壓而自電氣零件16、18的外周露出一部分。
壓接部22,其表面係以能與異向導電性膜15黏著的材料構成,因此,在後述之按壓時,為了避免異向導電性膜15與壓接部22接觸,在壓接對象物10表面上配置相對於異向導電性膜15呈低黏著性的保護膜5(第3(a)圖)。
此處,載置面27形成較開口23小,保護膜5較載置面27大且在其端部垂下於底座26側面的狀態下,包含保護膜5的底座26外周大致與開口23的大小相等。
因此,為了使開口23與包含保護膜5的底座26外周一致,將按壓頭20與底座26的方向對位,當藉驅動裝置25使按壓頭20下降時,底座26即與保護膜5一起插入凹部29。
保護膜5由可壓縮變形的材料構成,即使包含保護膜5的底座26的外形略大於開口23,仍可將底座26插入。
電氣零件16、18係例如半導體元件或電阻元件,其厚度因各零件的種類而異,因電氣零件16、18的厚度差而在基板11的表面上形成段差。
第3(b)圖表示底座26的載置面27與壓接對象物10一起插入凹部29內,在壓接部22按壓壓接對象物10的各電氣零件16、18前,形成壓接部22透過保護膜5而與基板11上最厚的電氣零件16接觸的狀態,於此狀態下,載置面27位於較開口23更上方,底座26側面的載置面27側的前端部分插入凹部29內,且被圍阻構件24的內周側面所圍繞。
若自此狀態進一步使按壓頭20下降,使壓接部22相對接近基板11,壓接部22之與電氣零件16接觸的部分即被按壓而凹陷。
此處,壓接部22的側面不固定於圍阻構件24,壓接部22的中央部分及周圍均呈凹陷,藉由進一步使按壓頭20下降而按壓,自厚度較厚的電氣零件16起往厚度較薄的電氣零件18依序與壓接部22的表面接觸而按壓。
當壓接部22接觸電氣零件16、18而凹陷時,其他部分即會因其反作用力而膨脹,惟由於壓接部22的底面固定於頭本體21,側面被圍阻構件24所圍繞,故不會往水平方向膨脹,壓接部22的表面中不面對電氣零件16、18的部分較按壓前更向下膨脹。因此,壓接部22表面於電氣零件16、18間的部分及壓接對象物10周圍的部分會向下膨脹(第3(c)圖)。
如上述,雖會有異向導電性膜15露出於電氣零件16、18之間,或是,當電氣零件16、18被按壓時異向導電性膜15的一部分自電氣零件16、18的外周突出的情形,惟由於電氣零件16、18之間以及電氣零件16、18係被保護膜5所覆蓋,故壓接部22並不會與異向導電性膜15直接接觸。
又,由於底座26與圍阻構件24間的間隙小,即使壓接部22的表面於壓接對象物10周圍向下膨脹,亦不會從該間隙流出,因此,即使壓接部22的向下膨脹部分充填於電氣零件16、18間的凹處,仍異於習知,壓接部22不會往輻射方向外側流動。因此,朝向外側的力量不會施加於各電氣零件16、18,不致造成電氣零件16、18的位置偏移。
於底座26內設有加熱器8,藉由對加熱器8通電將壓接對象物10加熱至既定溫度,異向導電性膜15的流動性會因此加熱而提高。
因此,當按壓電氣零件16、18時,異向導電性膜15即被電氣零件16、18推開,電氣零件16、18的端子17、19隔著異向導電性膜15中的導電性粒子而壓緊於基板11的端子12,使電氣零件16、18與基板11形成電氣連接。
於異向導電性膜15含有熱硬化性樹脂情況下,異向導電性膜15因加熱而硬化,又,於異向導電性膜15含有熱可塑性樹脂情況下,當加熱結束後溫度降低時,異向導電性膜15即固化。因此,電氣零件16、18透過硬化或固化的異向導電性膜15亦與基板11形成機械連接,而獲得電氣零件16、18與基板11形成機械及電氣連接的電氣裝置10a。
由於在按壓電氣零件16、18時,不會造成電氣零件16、18的位置偏移,故此電氣裝置10a的連接可靠性高。
如上述,由於按壓電氣零件16、18時壓接部22不與異向導電性膜15接觸,故壓接部22不會黏著於異向導電性膜15,當使按壓頭20上升時,壓接部22的表面即與電氣裝置10a分離,於底座26上殘留電氣裝置10a。
當壓接部22與電氣裝置10a分離時,施加於壓接部22的力量即解除,壓接部22即恢復成按壓電氣零件16、18前的形狀。
若取出殘留在底座26上的電氣裝置10a,將新的壓接對象物10載置於底座26上,即可於上述第3(a)~(c)圖的步驟中繼續進行電氣零件16、18的連接。
又,圍阻構件24前端的高度雖未特別限定,但由於壓接部22按壓壓接對象物10時的膨脹量不會大於此壓接對象物10的最大膜厚,故若使自按壓前的壓接部22表面至圍阻構件24前端的高度,與最厚電氣零件16(例如半導體元件)的膜厚和基板11的膜厚之合計量相等或較其為大的話,壓接部22即不會越過圍阻構件24。
以上,雖針對於按壓頭20預先形成凹部29,在此凹部29內收容壓接對象物10之後,使壓接部22接觸壓接對象物10的情形加以說明,惟本發明不限於此。
第4(a)圖的符號3係表示本發明第二例之壓接裝置,此壓接裝置3除了如下述改變按壓頭30的壓接部34以外,具有與上述第一例的壓接裝置1相同的構造,按壓頭30及底座26的配置亦與上述第一例的壓接裝置1相同。
相對於第一例的壓接裝置1以橡膠構成壓接部22,此壓接裝置3的壓接部34,具有由與第一例的壓接裝置1的壓接部22相同的橡膠構成的按壓橡膠32、活動板33、及壓縮構件31,壓縮構件31係由例如海棉狀橡膠般,內部具有空洞,當施力時空隙即被擠潰而使體積減少的材料構成。
壓縮構件31的上端固定於頭本體21的表面,活動板33的表面安裝於壓縮構件31的下端,按壓橡膠32的上端安裝於活動板33的背面。因此,壓縮構件31、活動板33及按壓橡膠32自頭本體21朝向底座26所處位置的垂直下方,按所載順序排列。
此處,壓縮構件31於水平方向切斷時的截面形狀與圍阻構件24所圍區域的截面形狀皆呈柱狀。因此,雖然壓縮構件31的側面與圍阻構件24的內周側面接觸,其側面卻不固定於圍阻構件24。按壓橡膠32及活動板33亦不固定於圍阻構件24,可在圍阻構件24所圍區域內移動。
第4(b)圖表示在使按壓橡膠32與壓接對象物10上的保護膜5接觸後,進一步使按壓頭30下降的狀態。
使壓縮構件31變形所需的力量小於使按壓橡膠32變形所需的力量,當按壓頭30下降時,壓縮構件31即藉按壓橡膠32而壓緊於頭本體21,於按壓橡膠32變形前,壓縮構件31壓縮,其厚度變小,壓縮構件31壓緊於按壓橡膠32,於按壓頭30出現壓縮前所無的凹部。
由於壓縮構件31的變形量有限,故若壓縮構件31變形至某一程度,壓縮即停止,若進一步繼續進行按壓頭30的下降,按壓橡膠32即變形(第4(c)圖)。
在按壓橡膠32變形時形成上述之凹部,圍阻構件24的前端突出至較按壓橡膠32的表面更下方,此前端與底座26間的間隙很小。因此,與第一例的壓接裝置1的情形同樣的,按壓橡膠32不會自此間隙流出,而產生電氣零件16、18的位置偏移。
壓縮構件31只要是會因按壓而減少體積之構件的話,並未特別限定。第5圖中符號為35的按壓頭,除了壓縮構件不同外,具有與第4(a)~(c)圖的按壓頭3相同的構造,對相同構件賦予相同符號加以說明。
此按壓頭35的壓縮構件由彈簧36構成,可藉由按壓將彈簧36壓縮,頂起壓接部34的表面,使圍阻構件24的前端突出至較壓接部34下方。
又,若施加於按壓橡膠32的力量可傳至壓縮構件31,即可不必特別設置支撐板33。
以上,雖說明將圍阻構件設於按壓頭20的情形,惟本發明不限於此。
第6圖的符號4係表示本發明第三例之壓接裝置,此壓接裝置4除了於按壓頭40未設置圍阻構件,而如下述所示,於底座46的載置面周圍設有圍阻構件49以外,具有與上述第一例的壓接裝置1相同的構成。
此處,壓接部42與第一例之壓接裝置1同樣由按壓橡膠構成,安裝於頭本體41的表面,取代以圍阻構件圍繞壓接部42,此處,係以薄板構成之滑動板44圍繞。
底座46與第一例之壓接裝置1同樣呈柱狀,於底座46,在載置面47周圍以圍繞載置面47的方式固定有圍阻構件49。
圍阻構件49的前端自載置面47向上方突出,形成以圍阻構件49的內周側面為側面、以載置面為底面的凹部45。
第7圖係用來比較底座46的平面形狀與按壓頭40的平面形狀的示意俯視圖,壓接部42之包含滑動板44的外周大小與凹部45的開口48相同或較其為小。
壓接部42的側面垂直面向下方,由於滑動板44的膜厚均一,故滑動板44的側面亦垂直面向下方。圍阻構件49的內周側面垂直面向下方,因此,按壓頭40的下端可插入凹部45。
其次,針對使用此壓接裝置4連接上述之壓接對象物10的情形加以說明。如同第一例的壓接裝置1的情形,將壓接對象物10配置於載置面47,並將保護膜5配置於圍阻構件49的開口48上,當將保護膜5推入圍阻構件49內部時,壓接對象物10即被保護膜5所覆蓋(第8(a)圖)。
此處,凹部45的開口48大小較按壓頭40的平面形狀的外周大,保護膜5大到其端部覆蓋凹部45的側面及其周圍,以保護膜5所覆蓋量縮小的凹部45的開口48大小,係大致與按壓頭40的平面形狀的外周大小相等。
因此,將按壓頭40與底座46的方向對位,俾此開口48與按壓頭40的外周一致,當藉驅動裝置25使按壓頭40下降時,按壓頭40的下端即插入開口48內而形成被圍阻構件49所圍繞的狀態。
第8(b)圖表示按壓頭40的下端插入開口48內,壓接部42的表面透過保護膜5而與最厚電氣零件16接觸的狀態,於此狀態下,壓接部42未被按壓且未變形。
於此狀態,在滑動板44具有柔軟性的情況下,壓接部42的側面自表面至底面被圍阻構件49所圍繞,在滑動板44無柔軟性情況下,至少壓接部42的表面周圍被圍阻構件49所圍繞。
因此,於任何情況下,壓接部42的側面均被硬構件所圍繞,當使按壓頭40下降將壓接部42壓緊於壓接對象物10時,壓接部42不會往水平方向膨脹,其表面會向下方膨脹(第8(c)圖)。
由於滑動板44薄,按壓頭40與圍阻構件49間的間隙亦小,故自壓接部42的表面邊緣至圍阻構件49的距離縮短。由於即使壓接部42隆起而擴大至外側亦會被圍阻構件49攔阻,故其擴展量小,難以造成電氣零件16、18的位置偏移。
又,在按壓頭40的平面形狀大小與圍阻構件49的開口48大小的差較大的情況下,可盡量增加保護膜5的膜厚,以保護膜5填埋圍阻構件49與按壓頭40側面間的間隙。
以上,雖對以滑動板44圍繞壓接部42周圍的情形加以說明,惟本發明不限於此,如第9圖所示,亦可於壓接部42周圍不設置滑動板44而使其側面露出。
以上,雖針對將圍阻構件固定於頭本體41或底座46的情形加以說明,惟本發明不限於此,亦可由使圍阻構件與底座或頭本體分離的個別構件構成,於按壓壓接對象物10時,使圍阻構件密合於底座或頭本體。
第10(a)圖的符號7係表示本發明第四例之壓接裝置,此壓接裝置7除了按壓頭70的圍阻構件74係由有別於頭本體71的構件構成外,具有與第一例之壓接裝置1相同的構成,按壓頭70及底座26的配置亦相同。第10(a)圖表示圍阻構件74與頭本體71分離的狀態。
圍阻構件74,如第11圖所示,具有複數片板狀之單位構件75,各單位構件75藉未圖示的移動機構,在表面朝向垂直方向狀態下,沿壓接部72的側面排列且密合於頭本體71,在各單位構件75密合於頭本體71狀態下,壓接部72的側面被單位構件75所圍繞。
第10(b)圖係表示壓接部72在最厚電氣零件16上與保護膜5接觸的狀態,該壓接部72不被按壓且不變形的狀態,遲於此狀態時將單位構件75密合,於按壓壓接部72而使其變形時,以單位構件75圍繞壓接部72的側面。
於壓接部72由按壓橡膠構成的情況下,將各單位構件75安裝成下端較按壓前的壓接部72表面更突出,即使進
一步使按壓頭70下降而按壓壓接部72,仍會與第一例之壓接裝置1的情形同樣,壓接部72不會越過圍阻構件74,不會造成電氣零件16、18的位置偏移(第10(c)圖)。
又,亦可使用壓接部72具有按壓橡膠及壓縮構件者。
第16、17圖的符號90及95係表示圍阻構件74可與頭本體71分離,且壓接部72具有壓縮構件31、36及按壓橡膠32的按壓頭。此處,第16圖的按壓頭90具有與第4(a)~(c)圖的按壓頭30的壓接部34相同的構成,第17圖的按壓頭95具有與第5圖的按壓頭35的壓接部34相同的構成。又,頭本體71及單位構件75的構成與第10圖的按壓頭70相同,相同構件分別賦予相同符號而加以說明。
於此按壓頭90、95情況下,若亦因壓縮構件31的壓縮而於後來形成以按壓橡膠32的表面為底面的凹部,即可在將圍阻構件74安裝於頭本體71時,使圍阻構件74的前端與按壓前的壓接部34表面形成相同高度、可使按壓前的壓接部34表面較圍阻構件74前端更向下方突出、亦可使圍阻構件74前端較按壓前的壓接部34表面更向下方突出。
以上,雖針對圍阻構件74由複數個單位構件75構成的情形加以說明,惟本發明不限於此,可如第12圖所示般最初便將圍阻構件74成形為筒狀。於此情況下,在按壓壓接對象物10,壓接部72變形前,將按壓頭70插入圍阻構件78的筒內側,以圍阻構件78的內周側面覆蓋壓接部72。在此情況下,由於壓接部72的水平方向擴展亦被圍阻構件78攔阻,故可防止電氣零件16、18的位置偏移。
其次,針對圍阻構件可與底座分離的情形加以說明。
第13(a)圖的符號8係表示本發明第五例之壓接裝置,此壓接裝置8除了圍阻構件89由可與底座86分離的個別構件構成以外,具有與上述第三例之壓接裝置4相同的構成,底座86及按壓頭40的配置亦相同。第13(a)圖表示圍阻構件89與底座86分離的狀態。
圍阻構件89可如第11圖所示,由複數個單位構件構成,亦可如第12圖所示由一個筒構成。在圍阻構件89由複數個單位構件構成時,沿載置面87的邊緣排列各單位構件且在圍繞載置面87的狀態下密合,於圍阻構件89呈筒狀情況下,將底座86插入此筒的下端,使圍阻構件89密合於底座86。
在使圍阻構件89密合於底座86的狀態下,圍阻構件89的前端較載置面87更往上方突出,形成以圍阻構件89的內周側面為側面、以載置面87為底面的凹部85。
此凹部85的開口和按壓頭40的大小關係與第6、7圖所示之壓接裝置4相同,因此,可將按壓頭40的下端插入凹部85內。
第13(b)圖表示壓接部42透過保護膜5而與載置面87上的壓接對象物10之最厚電氣零件16接觸的狀態,壓接部42不被按壓、不變形。遲於此狀態時,使圍阻構件89密合於底座86,以圍阻構件89圍繞載置面87周圍。
在此壓接裝置8,由於壓接部42的隆起表面亦以圍阻構件89攔阻(第13(c)圖),故壓接部42的水平方向擴展很小,可防止電氣零件16、18的位置偏移。
又,於保護膜5的平面形狀大到自載置面87露出的情況下,若在將圍阻構件89安裝於底座86後被覆保護膜5,保護膜5即不會被捲入圍阻構件89與底座86之間。
又,亦可如第14圖所示,不將保護膜5配置於載置面87上而將其捲繞於按壓頭40,在覆蓋壓接部42的表面狀態下,將按壓頭40壓緊於壓接對象物10。
以上,雖針對當按壓壓接對象物10時,以按壓頭20的圍阻構件24或圍阻構件49圍繞壓接部22全周的情形加以說明,惟本發明不限於此,若可防止按壓壓接對象物10時壓接部22的水平方向擴展,即可如第15圖所示,於圍阻構件24設置1個以上的切槽99,使壓接部22側面的一部分露出。
保護膜5的形狀或大小亦未特別限定,若能避免異向導電性膜15與壓接部22、34、42、72接觸,即可使用具大小不會自載置面27、47、87露出的保護膜5,亦可使用僅覆蓋壓接對象物10的一部分表面的保護膜5。
於所使用之異向導電性膜15與壓接部22、34、42、72的黏著性低之情況下,可不使用保護膜5而使壓接部22、34、42、72與壓接對象物10直接接觸。使壓接部22、34、42、72與異向導電性膜15的黏著性降低的方法,例如有將按壓橡膠的構成材料改成與異向導電性膜15的黏著性低的材料,或於按壓橡膠的表面設置對異向導電性膜15具有脫模性的脫模層的方法。
如此,雖然即使本案之壓接裝置不使用保護膜5,電氣零件與基板仍可連接,惟在圍阻構件與按壓頭間、或圍阻構件與底座間的間隙大情況下,可藉由保護膜5覆蓋圍阻構件的側面,藉此縮小該間隙。
因此,即使在不使用金屬模等而以低廉成本製造底座、圍阻構件或底座按壓頭,其成形精度不佳的情況下,仍可藉由適當選擇保護膜5的膜厚,填埋圍阻構件與按壓頭間、或圍阻構件與底座間的間隙。
本發明所使用之基板11的種類亦未特別限定,可使用硬基板、撓性基板等各種基板。
又,連接於基板11的電氣零件之種類亦未特別限定,亦可除了電氣零件外,在連接其他基板於基板11上時,亦可使用本案之壓接裝置及連接方法。
於異向導電性膜15中可僅含有熱可塑性樹脂及熱硬化性樹脂的任一者,亦可含有二者。
熱可塑性樹脂及熱硬化性樹脂的種類雖未特別限定,惟可使用一種以上的環氧樹脂、丙烯酸樹脂、氨基甲酸乙酯樹脂等作為熱硬化性樹脂,可使用一種以上的例如苯氧樹脂、聚乙烯醇樹脂等作為熱可塑性樹脂。
導電性粒子的種類亦未特別限定,除了金屬粒子外,可使用將金屬層設於樹脂粒子的表面而成者。
又,替代異向導電性膜15,可在將糊狀異向導電性黏著劑塗布於基板11表面後,將電氣零件黏著於該異向導電性黏著劑,作為壓接對象物10。
保護膜的種類雖未特別限定,惟以對上述之異向導電性膜15具有剝離性者較佳,例如可使用將四氟化聚乙烯成形為薄膜狀者、將矽氧橡膠成形為薄膜狀者。
構成按壓橡膠的彈性材料並未特別限定,舉一例說明,可使用橡膠硬度(依據JIS S 6050)為40、80的彈性體。
橡膠硬度可使用於JIS S 6050:2002之「6.測試方法」所載方法測定。以下說明其內容。
測試所用試料係使用製造後經過24小時以上者。又,化學分析上共通的一般事項係根據JIS K 0050。硬度測試,係使用硬度測試機,令測試機的壓針呈垂直,使加壓面與保持水平的測試片的表面接觸,隨即以正數讀取刻度。又,測試片的測定部位係將表面全體分成3等分,以各等分的中央部分為一部位逐一測定,以其中間值作為測試片的硬度。
又,硬度測試機係指壓針形狀為直徑5.08mm±0.02mm的半球狀彈簧硬度測試機。壓針的高度,於刻度0時為254±0.22mm、於刻度100時為0mm。刻度與彈力的關係如下述表1。
又,針對橡膠硬度分別為40、60、80的彈性體,在測定溫度30℃~240℃的範圍內,每30℃測定橡膠硬度所得之結果,橡膠硬度的變化為±2。由於此值在測定誤差範圍,故可知橡膠硬度係未受溫度變化影響的值。
雖可使用天然橡膠、合成橡膠的任一種作為按壓橡膠用的彈性體,惟從耐熱性、耐壓性的觀點看來,以使用矽氧橡膠較佳。
以上雖說明以驅動裝置25使按壓頭20沿上下方向移動的情形,惟本發明不限於此,若按壓頭20與作業台9相對移動,即可將按壓頭20固定,使作業台9沿垂直方向上下移動,亦可使按壓頭20及作業台9二者沿垂直方向上下移動。
改變第一例的壓接裝置1自按壓前的壓接部22表面至圍阻構件24前端的高度(前端高度),進行半導體元件16與基板11的連接,測定半導體元件16的水平方向偏移量。
在此,將按壓頭20收容於凹部29時自按壓頭20側面至圍阻構件24內壁面的距離(間隙)設為50 μ m,使用膜厚50 μ m的保護膜5,在實質上按壓頭20與圍阻構件24間無間隙的狀態下進行按壓。又,半導體元件16的厚度為0.4mm,基板11的厚度為0.6mm。
將所測得之半導體元件16的偏移量最大值與圍阻構件24的前端高度一起記載於下述表2。
又,上述表2中的「前端高度」以圍阻構件24前端與壓接部22表面形成相同高度的情形為「0mm」,以圍阻構件24前端較壓接部22表面更下方突出的情形為「+」,以壓接部22表面較圍阻構件24前端更下方突出的情形為「-」。
由上述表2可知,在圍阻構件24前端自按壓前的壓接部22表面突出情況下,最大偏移量小,相對於此,在壓接部22表面與圍阻構件24前端形成相同高度或較圍阻構件24前端更突出情況下,半導體元件16的偏移量大。
由以上可確認,藉由將圍阻構件24設成前端自壓接部22表面突出,可防止電氣零件的位置偏移,而可製造可靠性高的電氣裝置。
1、3、4...壓接裝置
5...保護膜
10...壓接對象物
11...基板
15...異向導電性膜
16、18...電氣零件
20、30、35、40、70...按壓頭
21...頭本體
22...壓接部(按壓橡膠)
31...壓縮構件
32...按壓橡膠
24、49、74、78、89...圍阻構件
26、46、86...底座
第1圖係說明第一例之壓接裝置的截面圖。
第2圖係說明按壓頭及底座的形狀的俯視圖。
第3(a)~(c)圖係說明將電氣零件構裝於基板的步驟的截面圖。
第4(a)~(c)圖係說明使用第二例的壓接裝置構裝電氣零件的步驟的截面圖。
第5圖係說明按壓頭之另一例的截面圖。
第6圖係說明第三例之壓接裝置的截面圖。
第7圖係說明按壓頭及底座的形狀的俯視圖。
第8(a)~(c)圖係說明將電氣零件構裝於基板的步驟的截面圖。
第9圖係說明按壓頭之另一例的截面圖。
第10(a)~(c)圖係說明使用第四例的壓接裝置將電氣零件構裝於基板的步驟的截面圖。
第11圖係說明圍阻構件之一例的俯視圖。
第12圖係說明圍阻構件之另一例的俯視圖。
第13(a)~(c)圖係說明使用第五例的壓接裝置將電氣零件構裝於基板的步驟的截面圖。
第14圖係說明保護膜配置方法之另一例的截面圖。
第15圖係說明圍阻構件之另一例的側視圖。
第16圖係說明圍阻構件可分離的按壓頭另一例的俯視圖。
第17圖係說明圍阻構件可分離的按壓頭另一例的截面圖。
第18(a)、(b)圖係說明習知技術的構裝方法的截面圖。
第19圖係說明按壓橡膠的擴展的俯視圖。
5...保護膜
8...加熱器
9...作業台
10...壓接對象物
10a...電氣裝置
11...基板
12...端子
15...異向導電性膜
16、18...電氣零件
17、19...端子
20...按壓頭
21...頭本體
22...壓接部(按壓橡膠)
24...圍阻構件
26...底座
27...載置面
29...凹部
Claims (8)
- 一種壓接裝置,具有底座及按壓頭,相對移動該按壓頭及底座,俾以該按壓頭按壓配置於該底座的載置面上的壓接對象物,其特徵在於:該按壓頭,具有頭本體及配置於該頭本體的按壓橡膠;於該按壓橡膠周圍配置較該按壓橡膠表面高度為高的圍阻構件;該按壓橡膠係邊變形邊按壓配置於該底座上的壓接對象物;該底座係插入該圍阻構件所圍成的空間內。
- 如申請專利範圍第1項之壓接裝置,其中,該圍阻構件可與該頭本體分離。
- 如申請專利範圍第1項之壓接裝置,其中,於該按壓橡膠與頭本體間配置可壓縮變形的壓縮構件;至少於該壓縮構件壓縮時,該圍阻構件的高度較該按壓橡膠的表面高度為高。
- 一種壓接裝置,具有底座及按壓頭;相對移動該按壓頭及底座,俾以該按壓頭按壓配置於該底座的載置面上的壓接對象物,其特徵在於:該按壓頭,具有頭本體及配置於該頭本體的按壓橡膠;該載置面被表面高度較其為高的圍阻構件所圍繞;該按壓頭係插入該圍阻構件所圍成的空間內。
- 如申請專利範圍第4項之壓接裝置,其中,該圍阻構件可與該底座分離。
- 一種構裝方法,係將基板上配置有複數個高度不同的零件的壓接對象物配置於底座的載置面上,藉設於按壓頭的按壓橡膠按壓該零件,以將該零件固定於基板時,以圍阻構件圍繞該壓接對象物周圍,俾以該圍阻構件攔阻因該按壓橡膠變形所造成的橫流,其特徵在於:自按壓前的按壓部表面至該圍阻構件前端的高度,預先設成最厚的該零件的厚度和該基板的厚度之合計值以上。
- 如申請專利範圍第6項之構裝方法,其中,於該零件與基板間配置異向導電性膜,在將該零件黏著於該基板後,邊對該基板加熱邊藉該按壓橡膠按壓。
- 如申請專利範圍第6項之構裝方法,其中,當按壓該零件時,於該按壓橡膠與壓接對象物間配置可自該異向導電性膜剝離的保護膜。
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EP1975994A1 (en) | 2008-10-01 |
CN101371346A (zh) | 2009-02-18 |
US7736459B2 (en) | 2010-06-15 |
US20090032570A1 (en) | 2009-02-05 |
TW200805538A (en) | 2008-01-16 |
US8011407B2 (en) | 2011-09-06 |
KR101057913B1 (ko) | 2011-08-19 |
WO2007080956A1 (ja) | 2007-07-19 |
KR20080093026A (ko) | 2008-10-17 |
JP2007189100A (ja) | 2007-07-26 |
HK1126034A1 (en) | 2009-08-21 |
CN101371346B (zh) | 2011-04-27 |
EP1975994A4 (en) | 2010-02-17 |
JP4925669B2 (ja) | 2012-05-09 |
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