TWI395357B - 熱保護相變隨機存取記憶體及其製造方法 - Google Patents
熱保護相變隨機存取記憶體及其製造方法 Download PDFInfo
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- TWI395357B TWI395357B TW098135138A TW98135138A TWI395357B TW I395357 B TWI395357 B TW I395357B TW 098135138 A TW098135138 A TW 098135138A TW 98135138 A TW98135138 A TW 98135138A TW I395357 B TWI395357 B TW I395357B
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- 238000000034 method Methods 0.000 title claims description 28
- 239000000463 material Substances 0.000 claims description 91
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 17
- 239000007772 electrode material Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 8
- 238000001459 lithography Methods 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 5
- 230000008859 change Effects 0.000 description 63
- 239000012071 phase Substances 0.000 description 63
- 239000012782 phase change material Substances 0.000 description 35
- 238000002955 isolation Methods 0.000 description 13
- 239000000956 alloy Substances 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 12
- 150000004770 chalcogenides Chemical class 0.000 description 11
- 230000007704 transition Effects 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 239000007790 solid phase Substances 0.000 description 7
- 229910052714 tellurium Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000011135 tin Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 238000012795 verification Methods 0.000 description 4
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 229910052798 chalcogen Inorganic materials 0.000 description 3
- 150000001787 chalcogens Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000005496 tempering Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005872 GeSb Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 2
- -1 chalcogenide compound Chemical class 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910015802 BaSr Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910016629 MnBi Inorganic materials 0.000 description 1
- 229910016964 MnSb Inorganic materials 0.000 description 1
- LKJPSUCKSLORMF-UHFFFAOYSA-N Monolinuron Chemical compound CON(C)C(=O)NC1=CC=C(Cl)C=C1 LKJPSUCKSLORMF-UHFFFAOYSA-N 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910004491 TaAlN Inorganic materials 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- UKJMAELKARVYOZ-UHFFFAOYSA-N [Ru]=S.[Cu] Chemical compound [Ru]=S.[Cu] UKJMAELKARVYOZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910000424 chromium(II) oxide Inorganic materials 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical compound [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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Description
本發明是關於基於相變記憶體材料之記憶體裝置以及其製造方法,相變記憶體材料包括硫屬化合物類材料,或者是其他可程式化電阻材料。
相變(phase change)類記憶體材料,如硫屬化合物類材料及其類似材料,可藉由以適合積體電路實施之準位,施加電流,導致非結晶態與結晶態之間的相態改變。一般非結晶狀態的特徵是具有比一般結晶狀態更高的電阻率,其可以容易地被感測到而指示資料。在使用可程式化電阻材料來形成非揮發性記憶體電路(可隨機地讀取與寫入)上,這些特性令人產生興趣。
從非結晶到結晶狀態的改變,在此一般為一較低電流操作,其中電流會加熱相變材料,使之達到轉態溫度以上,以造成主動區從非結晶到結晶相的轉態。在此所稱之從結晶到非結晶的改變,一般為一較高電流操作,其包括一短且高電流密度脈衝,以融化或破壞結晶結構,之後相變材料很快地冷卻,抑制相變過程且讓至少一部分相變材料的主動區穩定於非結晶相。技術是要讓主動區變小,使得誘發相變所需的電流量得以降低。
藉由減少相變材料元件的大小及/或與相變材料元件接觸之電極的大小,可以降低所需的電流大小,使得能以小的絕對電流值,達到主動區中之較高的電流密度。
控制主動區大小的一個方式是,設計非常小的電極,用以將電流傳送到相變材料的本體。此小電極結構是在接觸的位置將電流集中在像磨菇頭的小區域中。參考美國專利號No.6,429,064,公告於2002年8月6日,授予Wicker之“側壁導體之縮減接觸面積(Reduced Contact Areas of Sidewall Conductor)”;美國專利號No.6,462,353,公告於2002年10月8日,授予Gilgen之“製造電極間接觸的小面積的方法(Method for fabricating a Small Area of Contact Between Electrodes)”;美國專利號No.6,501,111,公告於2002年12月31日,授予Lowery之“三維可程式化裝置(Three-Dimensional(3D)Programmable Device)”;美國專利號No.6,563,156,公告於2003年1月1日,授予Harshfield之“記憶體元件及其製造方法(Memory Elements and Methods for Making Same)”。
控制主動區大小的另一種方式包括將電極隔開,使得流過其間的電流得以被集中在相變材料之薄層的厚度。參考美國專利申請公開號No.2007/0048945,Czubatyj等人提出之“記憶體裝置及其製造方法(Memory Device and Method of Making Same)”。另,參考下面本申請案之共同申請人的的申請和專利,美國專利申請號No.11/864,273,2007年9月28日提出申請,Lung所提出之“具有側電極接觸的記憶體胞(Memory Cell Having A Side Electrode Contact)”;美國專利號No.7,463,512,2008年12月9日公告,Lung所提出之“具有縮減電流相變元件的記憶體元件(Memory Element with Reduced-Current Phase Change
Element)”;美國專利申請號No.12/023,978,2008年8月7日申請,Lung所提出之“具有共平面電極表面之記憶胞裝置及其方法(Memory Cell Device with Coplanar Electrode Surface and Method)”。
由習知相變記憶胞結構引起的特定議題是與相變材料接觸之電極的散熱(heat sink)效應。因為相態改變是因為加熱而發生的結果,電極的熱導率會將熱帶離主動區,造成需要較高的電流來誘發相變。
較高的電流準位會造成對記憶胞的電性和機械可靠度的問題。這些問題包括在相變材料/電極界面之孔洞的形成,此乃因為在操作期間熱膨脹與材料密度改變所造成機械應力。
此外,較高的電流準位會導致像局部受熱的問題,此足以引起電極和相變材料之擴散/反應,且/或造成主動區內相變材料的組成改變,這導致電阻性切換效能衰減以及記憶胞的故障可能。
因此,不同技術被運用來嘗試將主動區進行熱隔離,使得誘發相變所需的電阻性加熱被侷限在主主動區。
改進熱隔離的一個方式包括使用鄰近於相變材料的空隙或孔洞。參考美國專利號No.6,815,704,公告於2004年11月9日,Chen所提出之“運用熱絕緣孔洞的相變記憶體裝置(Phase Change Memory Device Employing Thermally Insulating Voids)”。
也有人提出使用熱絕緣材料,以改進對主動區之加熱束縛。例如,參考美國專利申請號No.11/940,164,2007
年11月14日申請,Chen提出之“包括熱保護底電極之相變記憶胞及其製造方法(Phase Change Memory Cell Including Thermal Protect Bottom Electrode and Manufacturing Method)”。
改進熱隔離的另一方式是包括以將主動區與電極隔開之方式來形成相變材料和電極。參考下面本申請案之受讓人所共有之申請案,美國專利申請案No.11/348,848,2006年9月7日申請,Chen等人提出之“I型相變記憶胞(I-Shaped Memory Cell)”;美國專利申請案No.11/952,646,2007年12月7日申請,Lung提出之“具基本上相同熱阻抗之界面結構的相變記憶胞及其製造方法(Phase Change Memory Cell Having Interface Structures with Essentially Equal thermal Impedances and Manufacturing Methods);美國專利申請案No.12/026,342,2005年2月5日申請,Chen提出之“加熱中心PC記憶體結構和製造方法(Heating Center PCRAM Structure and Method for Making)”。
因此,有機會來設計相變記憶胞結構,其需要一小量電流來誘發主動區中的相變。此外,也需要提供製造此裝置之方法。
在此描述具有操作電流的相變記憶胞。此處描述的記憶胞降低從記憶體元件的主動區抽離的熱量,有效地增加主動區內每單位電流值所產生的熱量,並且降低誘發相變
所需之電流量。
在此描述一種記憶胞,其包括導電性接觸部和包含覆蓋在導電性接觸部上之可程式化電阻記憶體材料的記憶體元件。絕緣元件從導電性接觸部延伸至到記憶體元件內,絕緣元件有近端、遠端和用以定義內部的內表面。近端鄰近導電性接觸部。底電極與導電性接觸部接觸並且從近端於內部中向上延伸。記憶體元件是位於內部,自遠端向下延伸,以在第一接觸表面與底電極的上表面接觸。頂端電極藉由記憶體元件而與絕緣元件的遠端分開,並且與記憶體元件接觸於第二接觸表面,第二接觸表面的表面積大於第一接觸表面的表面積。
主動區是在內部之記憶體元件的區域,其中記憶體材料在至少兩個固相之間被誘發改變。如可知悉,主動區可以被製成極小,因而降低誘發相變所需的電流大小。內部之寬度低於記憶體元件和底電極的寬度,內部之寬度較佳是小於製程之最小特徵尺寸,典型而言該製程為微影製程,其用來形成記憶胞。寬度的不同將電流集中在位於內部之上部中的記憶體元件部分,藉此降低在主動區誘發相變所需的電流大小。
此外,在一些特定實施例中,因為高電阻率,底電極可以做為加熱器,相較於其他原因產生的,對於一給定的電流,在主動區引起較大的溫度改變,因此改進主動區中相變的效率。
再者,底電極的小寬度提供經過底電極的高熱阻路徑,因此限制熱量經底電極而從記憶體元件之主動區流失。
因為絕緣元件延伸至記憶體元件內並且在一些實施例中具有位在底電極之上表面下的下表面,主動區是位在記憶體元件之記憶體材料的空間內。記憶體元件的剩下部分可以因而對主動區提供熱隔離,降低誘發相變所需的電流量。此外,使主動區位於內部的上部分並且因而與記憶體元件的外表面分離,防止對於主動區的蝕刻損害問題。
絕緣元件也可以對主動區提供一些熱隔離。此外,可以使用薄膜沈積技術,將絕緣元件形成在側壁上,故而該元件的厚度可以非常小。小的厚度增加側壁絕緣元件之熱阻,其藉由側壁絕緣元件限制熱流流出主動區,並且藉此有助於將熱流集中於記憶體元件材料內。
本發明之其他觀點和優點可以參考所附圖式、詳細說明以及申請專利範圍。
參考圖1至11詳細說明本發明的實施例。
圖1繪示一種習知技術之“磨菇狀(mushroom-type)”記憶胞100的橫剖面圖,其具有底電極120,經由介電層110而延伸;相變記憶體元件130,包含底電極120上的一相變材料層;以及頂電極140,於相變記憶體元件130。介電層160環繞相變記憶體元件130。如可從圖1看出,底電極120的寬度125小於頂電極140和相變記憶體元件130的寬度145。
操作時,頂和底電極140、120上的電壓會誘發一電流,從頂電極140,經相變記憶體元件130,流至底電極
120,或循反方向。
主動區150是指相變記憶體元件130的區域,其至少在兩個固態相之間被誘發而改變。由於不同寬度125和145,從底電極120到頂電極140的電流路徑180會被集中在與底電極120相鄰的相變記憶體元件130的區域,這造成主動區150具有如圖1所示的「磨菇狀」。
故有必要將底電極120的寬度125縮小,以達成具有經記憶體元件130之小的絕對電流值的較高電流密度。然而,企圖減少底電極120的寬度125會造成底電極120和記憶體元件130間的介面128的電性和機械可靠度的問題,這是因為彼此之間接觸面積小。
操作時,由於寬度125、145的不同,電流集中於底電極120和相變記憶體元件130之間的接觸表面128。此外,如路徑180之箭頭所指示,電流從接觸表面128側向擴散並且在相變記憶體元件130中垂直擴散。結果,在側向與垂直方向上,相變記憶體元件130中的電流密度隨著遠離接觸表面128的距離而減少。電流在相變記憶體元件130中擴散所導致的電流密度減少,造成需要更高的電流,以在主動區中誘發出所要的相變。
電流密度以及在主動區150的中心152產生的熱遠大於位在主動區150的邊緣154的密度與熱。結果,當主動區150的邊緣154被加熱至足夠的溫度以誘發出所需的相變,中心152可以感受局部受熱,其足以造成對於記憶胞100之電性和機械可靠度的問題。
這些問題可包含在相變記憶體元件130和底電極120
間之介面128的孔洞形成,其肇始於操作期間熱膨脹與材料密度改變所造成的機械應力。此外,中心152會受到局部受熱,其足以誘發底電極120材料和相變材料130的擴散/反應,以及/或可以導致在中心154處相變材料130中的組成改變。這些問題會造成電阻性切換效能惡化以及記憶胞100的故障可能性。
此外,因為主動區150中相變的發生為受熱的結果,底電極120和介電110的熱傳導率會將熱從主動區150抽離,並且導致大量的熱損失。高的熱損失造成需要更高的電流,以在主動區150中誘發所需的改變。
圖2繪示一種習知“柱狀”記憶胞200的剖面圖。記憶胞200包括介電層210中的底電極220、底電極220上的相變材料柱230以及相變材料柱230上的頂電極240。介電層260環繞相變材料柱230。如可從圖式看出,頂和底電極240、220具有和相變材料柱230相同的寬度275。因此,主動區250可以和頂與底電極240、220隔開,而減少頂和底電極240、220所造成的散熱(heat sink)效應。然而,由於主動區250鄰近介電層260,會有相變材料230之側壁到介電層260的熱損失。
相變材料柱230的寬度275期望縮小,以達成具有經相變材料之小的絕對電流值的較高的電流密度。記憶體材料柱230和頂電極240的形成可以藉由沈積相變材料層和頂電極材料層,然後再蝕刻。然而,因為底切蝕刻及/或過度蝕刻,製造具有小寬度275與過大(aggressive)高寬比的元件已經有產生問題。這會造成對記憶體材料柱230之側
壁232的蝕刻損害,也會引起記憶體材料柱230和底電極220之間的對準容忍度問題。
圖3A繪示記憶胞300的實施例的剖面圖,在此所述具有小操作電流並且和處理上述各種問題。
記憶胞300包括導電性接觸部305,以及覆蓋在導電性接觸部305上的可程式化電阻性記憶體元件330。導電性接觸305耦接記憶胞300至底下之如電晶體或二極體的存取電路(未繪示)。導電性接觸部305包含耐熱金屬,例如實施例所示的鎢。其他可使用的金屬包含Ti、Mo、Al、Ta、Cu、Pt、Ir、La、Ni和Ru。其他接觸結構和材料可以被使用做為井。舉例來說,導電性接觸部305可以是矽,或可包含摻雜半導體材料,其為一存取電晶體或二極體的汲極或源極區。
記憶體元件330包括可程式化電阻性記憶體材料,並且可包含如選自於Zn、To、Tl、Ge、Sb、Te、Se、In、Ti、Ga、Bi、Sn、Cu、Pd、Pb、Ag、S、Si、O、P、As、N和Au所構成群組的一或多個材料。
記憶胞300也包含一個管狀絕緣元件350,其自導電性接觸部305延伸到記憶體元件330。絕緣元件350有一近端256和遠端351,近端256鄰近導電性接觸部305。絕緣元件350也有一用以界定出內部360的內表面354。絕緣元件350包含介電材料,而在例示實施例中包含Al2O3。另外,絕緣元件350也可包含其他像SiO2或SiN的介電材料。
底電極320接觸導電性接觸部305,並且從近端356
在內部360的下部分362向上延伸。絕緣元件350之內表面354延伸超過底電極320的上表面324,以定義內部360的上部分364。在例示實施例中,上與上部分364、362有大致相同的寬度366。在此處使用,「大致上」是傾向提供在形成絕緣元件350期間的製程容忍度。
底電極320有一外表面322,其絕緣元件350之內表面354所圍繞。底電極320可包含如TiN或TaN。在記憶體元件包含GST(底下會討論)的實施例中,TiN較佳,因為它可與GST有較好的接觸,GST是半導體製造中所使用的一般材料,且在較高溫度下提供一個好的擴散阻障,在此典型的GST轉換是在600-700℃的範圍。另外,底電極320可能是W、WN、TiAlN或TaAlN,或者包含一或多個元素選自於如由摻雜Si、Si、Ge、C、Ge、Cr、Ti、W、Mo、Al、Ta、Cu、Pt、Ir、La、Ni、N、O、Ru及其組合所構成群組之元素。
如圖3B上視圖所示,在例示實施例中底電極320和絕緣元件320和絕緣元件350每個均有圓形剖面。然而,在實施例底電極320和絕緣元件350可以分別有截面圓形、橢圓、方形、矩形或稍微不規則形的剖面,端視形成形成底電極320和絕緣元件350所用的製程技術而定。
回到圖3A的剖面圖,記憶體元件330包含在內部360的上部分364內的一部份,其自遠端351向下延伸,以在第一接觸表面333與底電極320的上表面324接觸。
記憶體元件330也延伸到絕緣元件350上表面下方,以連接絕緣元件的外表面352,並且具有一下表面331,其
位在底電極320的上表面324下方。因此,記憶體元件330環繞絕緣元件和底電極320的一部分。
記憶體元件330是在介電層310上。例如,介電層310可包括SiO2。另外,介電層310可包括其他材料。
記憶胞300也包含頂電極340,其藉由記憶體元件330的記憶體材,與絕緣元件350的遠端351分開。頂電極340與記憶體元件330在第二接觸表面342彼此接觸。第二接觸表面342的表面積大於第一接觸表面333的表面積。
例如,頂電極340可包括上面討論到關於底電極320的各種材料。在一些實施例中,頂電極340可包括一層以上。舉例來說,頂電極340可包括第一材料,其與記憶體元件330接觸,並且選擇與記憶體元件330材料相同的材料;以及第二材料,在第一材料上,並選擇如低阻性等其他優點的材料。在一些實施例中,頂電極340可包括位元線的一部分。頂電極340和記憶體元件330被介電層370所圍繞,該介電層370包括如SiO2。另外,介電層370可包括其他材料。
在操作時,頂電極340和底電極320上的電壓會誘發一電流,該電流沿著自頂電極340、流經記憶體元件330並經過接觸表面333、342而到底電極320之路徑或反方向流動。
主動區是在內部360之上部分364中記憶體元件330的一部分,在此記憶體材料會在至少兩個固態相之間被誘發改變。如所知悉,在繪示的結構中,主動區可以被形成相當小,藉以減低引發相變所需之電流大小。內部360的
寬度366小於記憶體元件330和頂電極340的寬度332,而對於用來形成記憶胞300之一般微影蝕刻製程,寬度366較佳是小於該製程的最小特徵尺寸。寬度332和366之間的差異,將限制在內部360之上部分364內記憶體元件330的一部分中的電流,藉此減少在主動區引發相變所需的電流大小。
此外,在某些實施例中,因為底電極320的高電阻性,底電極320可當做一個加熱器,相較於其他原因產生的,對於一給定的電流,可在主動區引起較大的溫度改變,藉此改善主動區中的相變效率。
再者,底電極320的小寬度366提供經過底電極320的高熱阻抗路徑,因此限制了經由底電極320從記憶體元件330的主動區流出的熱流量。
因為記憶體元件330圍繞絕緣元件350的外表面352且向下延伸到底電極320的上表面324,主動區是在記憶體元件330之記憶體材料的區域內。記憶體元件330的剩下部分可因此提供對主動區的熱隔離,其減少引發相變所需的電流量。在實施例中,記憶體元件330的記憶體材料可以具有最高熱導率狀態之熱導率(k),此熱導率小於介電材料310、350和370之熱導率。因此,藉由讓主動區在記憶體材料內,在實施例中,比起介電材料所提供的,記憶體元件330可以提供給主動區更大熱隔離,因此降低誘發相變所需要的電流量。
此外,使主動區在內部360的上部分364內並且因此與記憶體元件330的外表面分離,防止對主動區的蝕刻損
傷的問題。
絕緣元件350也可以對主動區提供一些熱隔離。此外,在實施例中,可以使用薄膜沈積技術,將絕緣元件350形成於側壁上,也因此絕緣元件350的厚度382可以非常小。小的厚度382增加絕緣元件350的熱阻,其限制熱藉由絕緣元件350流出主動區,並且藉此有助於將熱集中流到記憶體元件330的材料內。
圖4到圖9繪示適於製造圖3A-3B的記憶胞300的製造程序的步驟。
圖4說明形成介電層310於導電性接觸部305的第一步,其形成犧牲材料層400於介電層300上,並且在材料層400和介電層310中形成介層窗410,介層窗410具有側壁表面414。材料層400包括的材料是可相對於介電層310的材料和後續形成之側壁絕緣元件350而被選擇性處理(例如選擇性蝕刻)的。材料層400可包括如SiO2,而介電層和後續形成的側壁絕緣元件350每一個均可以包括SiN。
可形成具有次微影蝕刻寬度(sublithographic width)412的介層窗410,例如,藉由在該層400上形成隔離層,並且在該隔離層上形成犧牲層。接著,具有接近於或等於製程(用於產生罩幕)之最小特徵尺寸之開口的罩幕形成在犧牲層上,開口重疊於介層窗410上。隔離層和犧牲層接著使用罩幕進行選擇性蝕刻,藉此在隔離層和犧牲層形成介層窗,並且暴露層400的上表面。移除光罩後,對介層窗進行選擇性底切蝕刻,使得隔離層被蝕刻,而犧牲層和
層400保留完整。填入材料接著形成在介層窗內,其因為選擇性底切蝕刻製程導致在形成於介層窗內的填入材料中的自我對準孔洞。接下來,對填入材料進行非等向性蝕刻製程以打開介層窗孔,且持續蝕刻直到層400被暴露於介層窗下的區域,藉此形成側壁間隙壁,此側壁間隙壁包含介層窗內的填入材料。側壁間隙壁具有一開口維度(dimension),此維度大致上由孔洞的維度決定,並因而可以小於微影製程的最小特徵尺寸。接下來,使用側壁間隙壁做為蝕刻罩幕,對層400和介電層310進行蝕刻,藉此形成介層窗410,其寬度412小於最小微影製程尺寸。隔離層和犧牲層可以藉由如化學機械研磨法(CMP)之平坦化製程來移除。
接著,絕緣材料之層500形成於圖4所示的結構上,也包含於在介層窗410內,這產生圖5之剖面圖所示的結構。如可從圖4看出,層400和介層窗410是共形,而且是在側壁414上。層500可以藉由例如化學氣相沉積(CVD)或原子層沈積(ALD)來形成。
接著,圖5之結構的絕緣材料的層500被非等向蝕刻,以在介層窗410的側壁414上形成絕緣元件350,這產生圖6之剖面圖所繪示的結構。絕緣元件350有一內表面354,用以定義一內部360。
接下來,底電極320形成在圖6所示之結構的絕緣元件350的內部360內,這產生圖7之剖面圖所示的結構。底電極320的形成,例如可以在圖6所示的結構上沈積一層底電極材料,藉著利用如化學機械拋光(CMP)等的平坦
化製程,以暴露出材料曾400的上表面。
接下來,底電極320的一部分由圖7所示的結構開始蝕刻,如圖8剖面圖所示,形成具有上表面324的底電極320,此上表面324低於絕緣元件350的上表面351。底電極320一部分的蝕刻造成內部360的上面部分364自行對準於下面部分362中底電極320的剩餘部分。因此,後續形成於內部中的記憶體材料便自行對準於底電極320。
接下來,材料層400從圖8所示的結構起被選擇性地蝕刻,以暴露絕緣元件350的外表面352,並且底電極320的上表面被清理,形成圖9剖面圖所示的結構。在例示的實施例中,材料層400是SiO2,絕緣元件350和層310為SiN,選擇性蝕刻是使用如HF等來進行。
接下來,相變材料沈積在圖9所示的結構上,頂電極材料沈積在相變材料上,並將相變材料和頂電極材料圖案化以分別形成記憶體元件330和頂電極340,產生圖3A-3B的記憶胞300。
圖10是積體電路1000的簡化方塊圖,其包括具有多數個記憶胞的記憶體陣列1005,此處描述之記憶胞具有小操作電流,記憶胞包括相變記憶體元件,可以程式化到多種電阻狀態,此電阻狀態包括低電阻狀態和高電阻狀態。具有讀取、重置、重置驗證、設定驗證和設定模式的字元線解碼器1010耦接到多數條字元線1015,並且與該些字元線1015電性通訊,其中該些字元線1015是沿著記憶體陣列1005的列而排列。位元線(行)解碼器1020與多數條位元線進行電性通訊,而該些位元線1025沿著陣列1005
的行而排列,用以對陣列1005中的記憶胞禁行讀取和程式化。
位址提供到匯流排,再到字元線解碼器和驅動器1010以及位元解碼器1020。方塊1030中的感測電路(感測放大器)和資料輸入結構於區塊1030,包括用於讀取和程式化模式的電壓及/或電流源,並經由資料匯流排1035耦接到位元線解碼器。資料是從積體電路1000的輸入/輸出埠並且經由資料輸入線1040而提供,或者是從機體電路1000之內部或外部的其他資料源提供到方塊1030的資料輸入結構。其他電路1065也可以包括在機體電路1000中,例如一般用途處理器或特殊目的應用電路,或者是提供陣列1005所支援之系統晶片功能之模組的組合。資料經由資料輸出線1045,從方塊1030中的感測放大器,提供到積體電路1000的輸入/輸出埠,或者是積體電路1000之內部或外部的其他資料目的地。
積體電路1000包括控制器1050,用於陣列1005之記憶胞的讀取、重置、重置驗證、設定驗證和設定模式。控制器1050在此例中使用偏壓配置狀態機器來實現,並且控制偏壓電路電壓與電流源1055之施加,這些是用來對字元線1015、位元線1025和某些實施例中的源極線施加包括讀取、設定與重置的偏壓配置。控制器1050可以使用本領域所之的特殊目的邏輯電路來實現。在其他實施例中,控制器1050包括一般用途處理器,其可在相同的積體電路中實施,以執行電腦程式,來控制元件的操作。在另外其他實施例中,可以利用特殊目的邏輯電路與一般用途處理器
的組合,來實施制器1050。
如圖11所示,陣列1005的每個記憶胞包括存取電晶體(或其他存取元件,如二極體)以及相變記憶體元件。圖11繪示四個記憶胞1130、1132、1134、1136,各自具有記憶體元件1140、1142、1144、1146,其代表可包括數百萬計憶胞之陣列的一小部分。記憶體元件可被程式化到多數個電阻狀態,此電阻狀態包括低和高電阻狀態。
記憶胞1130、1132、1134、1136的各個存取電晶體的源極共同地連接到源極線1154,此源極線終止於源極線終端電路1155,例如接地端。在其他實施例中,存取元件的源極線並沒有電性連接,但可獨立控制。源極線終端電路1155包括偏壓電路,例如在一些實施例中像用以施加接地以外的偏壓配置給源極線1154的電壓源與電流源、以及解碼電路。
包含字元線1156、1158的多數條字元線在第一方向上平行延伸。字元線1156、1158與字元線解碼器1010電性通訊。記憶胞1130、1134之存取電晶體的閘極連接到字元線1156,而記憶胞1132、1136之存取電晶體的閘極共同地連接到字元線1158。
包括位元線1160、1162的多數條位元線在第二方向上平行延伸,並且與位元線解碼器1020於電性通訊。在例示實施例中,每個記憶體元件被排列在對應存取元件之汲極與對應位元線之間。另外,記憶體元件也可位於對應存取元件的源極側。
可理解的是記憶體陣列1005不侷限在圖11所繪示的
陣列結構,也可以使用其他的陣列結構。此外,除了MOS電晶體,在某些實施例中雙載子電晶體或二極體可以當作存取元件。
在操作中,陣列1005中的每個記憶胞儲存與對應季記憶元件之電阻有關的資料。例如,資料值的決定可以由感測電路1030的感測放大器,對被選擇之記憶胞的位元線上的電流以及一合適的參考電流進行比較。參考電流可以建立成電流的一預定範圍是對應到邏輯“0”,而電流的一相異範圍是對應到邏輯“1”。在具有三或更多狀態的記憶胞中,參考電流可以建立成位元線電流的不同範圍對應到該三或更多狀態的每一個狀態。
讀取或寫入一陣列1005的記憶胞可藉由施加一合適的電壓給字元線1156、1158其中之一並且將位元線1160、1162其中之一耦接到一電壓來達成,使得電流流過選擇的記憶胞。例如,經一選擇之記憶胞(在此例中記憶胞1132與對應的記憶元件1148)的電流路徑1180,可藉由施加電壓給位元線1160、字元線1158與源極線1154來建立,這些電壓足以將記憶胞1132之存取電晶體導通,並且在路徑1180誘發電流,使之從位元線1160流到源極線1154,或者反方向。所施加的電壓的準位與期間由所執行的操作來決定。
在記憶胞1132的重置(抹除)操作,字元線解碼器1010提供字元線1158一合適的電壓,以導通記憶胞1132的存取電晶體。位元線解碼器1020提供具有合適振幅(大小)與期間的一或多個電壓脈衝到位元線1160,以誘發電流流
經記憶體元件1148,藉此將主動區之至少一部分的溫度提高到相變材料的轉態溫度以上並且也高於融化溫度,以使主動區的至少一部分處於液態。電流之後終止,例如藉由終止位元線1160上的電壓脈衝以及字元線1158上的電壓,造成相當快的猝冷時間,讓主動區快速冷卻以穩定到非晶相。
在記憶胞1132的讀取(或感測)操作時,字元線解碼器1010提供字元線1158一合適的電壓來導通記憶胞1132的存取電晶體。位元線解碼器1120提供具有合適振幅(大小)與期間的一電壓到位元線1160,以誘發電流流動,該電流不會造成記憶體元件1148經歷電阻狀態的改變。位元線1160上和經過記憶體元件1148的電流是與記憶胞1132之記憶元件1148之電阻有關,也因此與記憶胞1132之記憶元件1148相關的資料狀態有關。因此,記憶胞1132資料狀態之決定,可例如由感測放大器對位元線1160上的電流與合適的參考電流進行比較。
在記憶胞1132的設定(或程式化)操作,字元線解碼器1010提供字元線1158一合適的電壓,以導通記憶胞1132的存取電晶體。位元線解碼器1020供應具有合適振幅(大小)與期間的一電壓到位元線1160,以誘發流經記憶元件1148之電流,藉此將主動區之至少一部分的溫度提高到相變材料的轉態溫度以上,造成主動區至少一部分從非結晶相到結晶相的轉態,此轉態降低記憶體元件1148電阻且將記憶胞1132設定到所要狀態。
此處描述之記憶體元件的記憶體材料的實施例包括
相變記憶體材料,其包括硫屬化合物材料和其他材料。硫屬元素包含氧(O)、硫(S)、硒(Se)和碲(Te)四種元素的任一個,形成週期表VIA族的一部分。硫屬化合物包括硫族元素和較電正性元素或自由基的化合物。硫屬化合物合金包括硫屬元素和其他像過度金屬之材料的組合。硫屬化合物合金通常包含一個或多個來自元素週期表的IVA族之元素,如鍺(Ge)和錫(Sn)。通常,硫屬化合物合金包括含一或多個銻(Sb)、鎵(Ga)、銦(In)和銀(Ag)的組合。很多相變記憶體材已經描述在技術文獻中,包括Ga/Sb、In/Sb、In/Se、Sb/Te、Ge/Te、Ge/Sb/Te、In/Sb/Te、Ga/Se/Te、Sn/Sb/Te、In/Sb/Ge、Ag/In/Sb/Te、Ge/Sn/Sb/Te、Ge/Sb/Se/Te和Te/Ge/Sb/S。在Ge/Sb/Te合金族中,一大範圍的合金的組成是可行的。此組成可被特徵化為TeaGebSb100-(a+b)。研究人員已經描述最有用的合金是在沈積材料中Te之平均濃度為正好70%以下,典型是低於60%,且範圍一般從最低大約23%至58%的Te,較佳是約48%到58%的Te。Ge的濃度在大約5%以上,並且在材料中的範圍平均是自最低8%到大約30%,剩下的一般在50%以下。較佳來說,Ge濃度範圍自大約8%到大約40%。在此組成中主要構成元素的剩餘部分是Sb。這些百分比是原子百分比,總構成元素的原子是100%。(Ovshinsky,112專利,col.10-11)。其他研究員所評估的特定合金包括Ge2Sb2Te2、GeSb2Te4和GeSb4Te7(Noboru Yamada,“Potential of Ge-Sb-Te-Phase-Change Optical Disks for High-Data-Rate Recording”,SPIE v.3109,pp.28-37(1997))。更一般地,如鉻
(Cr)、鐵(Fe)、鎳(Ni)、鈮(Nb)、鈀(Pd)、鉑(Pt)和混合物或其合金的過渡金屬,可以和Ge/Sb/Te結合以形成具有可程式化電阻特性之相變合金。在欄11-13,Ovshinsky‘112給出了可能有用的記憶體材料的特定例子。
在一些實施例中,硫屬化合物和其他相變材料以雜質進行摻雜,以修正導電率、轉移溫度、融化溫度以及使用摻雜硫屬化合物之記憶體元件的其他特性。用來摻雜硫屬化合物的代表性雜質包含氮、矽、氧、二氧化矽、氮化矽、銅、銀、金、鋁、氧化鋁、鉭、氧化鉭、氮化鉭、鈦和氧化鈦。例如,參考美國專利號No.6,800,504和美國專利申請公開號No.2005/0029502,在此一併列入參考。
相變合金能夠在記憶胞的主動通道區中以其局部秩序,在第一結構狀態與第二結構狀態之間切換,其中在第一狀態下材料是一般非結晶固態相,而在第二狀態下材料是一般結晶固態相。這些合金至少是雙穩態。非結晶一詞在此是代表相對較少秩序的結構,比單晶更失序(disorder),其所具有可偵測特性是例如比結晶相更高的電阻率。結晶一詞在此是代表相對更有秩序的結構,比非結晶結構更有秩序,其所具有可偵測特性是例如比非結晶相更低的電阻率。典型地,在橫跨完全非結晶態與完全結晶態間之頻譜,相變材料可於局部秩序的相異可偵測狀態之間被電性切換。受非結晶和結晶相間改變影響的其他材料特性包括原子秩序、自由電子密度和活化能。材料可在不同的固相之間切換,或者是切換成二或更多固相之混合物,以提供完全非結晶和完全結晶狀態之間的灰階。材料
的電性特性可因此改變。
相變合金可藉由施加電脈衝,而從一相態改變到另一相態。觀察到的是較短、較高振幅的脈衝會將相變材料改變到一般非結晶狀態,而較長、較低振幅的脈衝會將相變材料改變至一般結晶狀態。較短、較高振福的能量是足夠高以讓結晶結構的鍵結被破壞,並且足夠短以防止原子重新排列成結晶狀態。適當的脈衝輪廓(profile)不需要過度實驗便可以被決定,特別適用於特殊相變合金。在接下來揭露中,相變材料被稱為GST,且可理解的是其他類型的相變材料也可以使用。在此描述之對於PCRAM實施有用的材料是Ge2Sb2Te5。
其他可程式化電阻性記憶體材料可以使用在本發明之其他實施例,其包括使用不同結晶相變以決定電阻的材料,或其他用電脈衝來改變電阻狀態的其他記憶體材料。例子包括使用於電阻隨機存取記憶體的材料,如包含氧化鎢(WOx)、NiO、Nb2O5、CuO2、Ta2O5、Al2O3、CoO、Fe2O3、HfO2、TiO2、SrTiO3、(BaSr)TiO3等之金屬氧化物。其它例子包括用於磁阻隨機存取記憶體(MRAM)的材料,如自旋力矩轉移(spin-torque-transfer)MRAM,材料例如是CoFeB、Fe、Co、Ni、Gd、Dy、CoFe、NiFe、MnAs、MnBi、MnSb、CrO2、MnFe2O3、FeOFe2O5、NiOFe2O3、MgOFe2、EuO和Y3Fe5O12的至少其中之一。又例如,美國專利公開號No.2008/0176251,其發明名稱「磁性記憶體元件及其製造方法(Magnetuc Memory Device and Method of Fabricating the Same)」,在此一併提出作為參考。其他例子
包括使用在可程式化金屬化記憶胞(programmable-metallization-cell,PMC)記憶體,或奈米離子記憶體(nanoionic memory)的固態電解質材料,如摻雜銀的硫化鍺電解質和摻雜銅的硫化鍺電解質。又,例如,N.E.Gilbert等人在Solid-State Electonic 49(2005)1813-1819中所發表的“A macro model of programmable metallization cell devices”,在此也一併列入參考。
一個形成硫屬化合物材料的範例方法是,在1mTorr~100mTorr壓力下,以Ar、N2及/或He的氣體源,使用PVD漸鍍或磁控濺鍍方法。沈積通常在室溫下完成。可以使用具有高寬比1-5之準直器來改善填充效能(fill-in performance)。為了改善填充效能,通常也使用數10伏特到數百伏特的直流偏壓。另一方面,直流偏壓和準直器可以同時使用。
一個形成硫屬化合物材料的範例方法是使用化學氣相沈積法(CVD),如美國專利公開號No.2006/0172067,發明名稱為“硫屬化合物材料的化學氣相沈積(Chemical Vapor Deposition of Chalcogenide Materials)”,在此一併列入參考。
在真空或N2環境下的後沈積回火處理是選擇性執行,藉以改進硫屬化合物材料的結晶狀態。回火時間少於30分時,回火溫度一般範圍是100℃到400℃。
100‧‧‧記憶胞
110‧‧‧介電層
120‧‧‧底電極
125‧‧‧底電極寬度
128‧‧‧接觸面
130‧‧‧相變記憶體元件
140‧‧‧頂電極
145‧‧‧頂電極寬度
150‧‧‧主動區
152‧‧‧主動區中心
154‧‧‧主動區邊界
160‧‧‧介電層
180‧‧‧電流路徑
200‧‧‧柱狀記憶胞
205‧‧‧導電性接觸部
210‧‧‧介電層
220‧‧‧底電極
230‧‧‧相變記憶體元件
232‧‧‧介電層側壁
240‧‧‧頂電極
250‧‧‧主動區
256‧‧‧近端
260‧‧‧介電層
275‧‧‧柱狀寬度
300‧‧‧記憶胞
305‧‧‧導電性接觸部
310‧‧‧介電層
320‧‧‧底電極
322‧‧‧底電極之外表面
324‧‧‧底電極上表面
330‧‧‧電阻記憶體元件
331‧‧‧絕緣元件下表面
332‧‧‧頂電極寬度
333‧‧‧第一接觸表面
340‧‧‧頂電極
342‧‧‧第二接觸表面
350‧‧‧絕緣元件
351‧‧‧遠端
352‧‧‧絕緣元件外表面
354‧‧‧絕緣元件內表面
356‧‧‧近端
360‧‧‧內部
362‧‧‧底電極底面部分
364‧‧‧記憶元件上面部分
366‧‧‧頂電極寬度
370‧‧‧介電層
380‧‧‧電流路徑
382‧‧‧厚度
400‧‧‧犧牲材料層
410‧‧‧介層窗
412‧‧‧橫截面寬度
414‧‧‧介層窗側壁表面
500‧‧‧絕緣材料層
1000‧‧‧積體電路
1005‧‧‧記憶體陣列
1010‧‧‧字元線解碼器
1015‧‧‧字元線
1020‧‧‧位元線解碼器
1025、1035‧‧‧資料匯流排
1030‧‧‧方塊
1040‧‧‧資料輸入線
1045‧‧‧資料輸出線
1050‧‧‧控制器
1055‧‧‧偏壓電路電壓與電流源
1060‧‧‧位址
1065‧‧‧其他電路
1130、1132、1134、1136‧‧‧記憶胞
1146、1148、1152、1150‧‧‧記憶體元件
1154‧‧‧源極線
1155‧‧‧終端電路
1156、1158‧‧‧字元線
1160、1162‧‧‧位元線
1180‧‧‧電流路徑
圖1繪示習知技術之“磨菇狀”記憶胞的剖面圖。
圖2繪示習知技術之“柱狀”記憶胞的剖面圖。
圖3A、3B分別繪示此處描述之記憶胞之實施例的剖面圖和上視圖。
圖4到9繪示適於製造圖3A-3B之記憶胞的製程步驟。
圖10是積體電路之簡圖,其可實施此處描述的記憶胞。
圖11是圖10之積體電路的記憶體陣列的部分實施例的示意圖。
300‧‧‧記憶胞
305‧‧‧導電性接觸部
310‧‧‧介電層
320‧‧‧底電極
322‧‧‧底電極之外表面
324‧‧‧底電極上表面
330‧‧‧電阻記憶體元件
331‧‧‧絕緣元件下表面
332‧‧‧頂電極寬度
333‧‧‧第一接觸表面
340‧‧‧頂電極
342‧‧‧第二接觸表面
350‧‧‧絕緣元件
351‧‧‧遠端
352‧‧‧絕緣元件外表面
354‧‧‧絕緣元件內表面
356‧‧‧近端
360‧‧‧內部
362‧‧‧底電極底面部分
364‧‧‧記憶元件上面部分
366‧‧‧頂電極寬度
370‧‧‧介電層
380‧‧‧電流路徑
382‧‧‧厚度
Claims (19)
- 一種記憶體裝置,包括:一導電性接觸部;一記憶體元件,包括一可程式化電阻記憶體材料,該可程式化電阻記憶體材料覆蓋於該導電性接觸部上;一絕緣元件,從該導電性接觸部延伸到該記憶體元件內,該絕緣元件具有一近端、一遠端和一內表面,其中該內表面用以定義一內部,該近端鄰近於該導電性接觸部,且該記憶體元件圍繞該絕緣元件的一外表面;以及一底電極,與該導電性接觸部接觸,並且在該內部中從該近端向上延伸,在該內部中之該記憶體元件從該遠端向下延伸,該記憶體元件以在一第一接觸表面與該底電極的一上表面接觸。
- 如申請專利範圍第1項所述之記憶體裝置,其中該記憶體元件具有一下表面,位於該底電極的該上表面下。
- 如申請專利範圍第1項所述之記憶體裝置,其中在該內部中的該記憶體元件是自行對準於該底電極。
- 如申請專利範圍第1項所述之記憶體裝置,其中該內部具有一寬度,該寬度小於一最小特徵尺寸,該最小特徵尺寸用於形成該記憶體裝置之一微影製程。
- 如申請專利範圍第1項所述之記憶體裝置,更包括一頂電極,藉由該記憶體元件,與該絕緣元件的該遠端分離,並且與該記憶體元件接觸於一第二接觸表面,其中該第二接觸表面的表面積大於該第一接觸表面的表面積。
- 如申請專利範圍第1項所述之記憶體裝置,其中該 記憶體元件包括一材料,該材料的熱導率低於該絕緣元件之材料的熱導率。
- 如申請專利範圍第1項所述之記憶體裝置,其中該內部在該近端與該遠端具有大致相同的寬度。
- 一種製造記憶體裝置的方法,包括:形成一導電性接觸部;形成一絕緣元件,其中該絕緣元件具有一近端、一遠端和一內表面,該內表面用以定義一內部,而該近端鄰近該導電性接觸部;形成一底電極,該底電極與該導電性接觸部接觸,並且在該內部中從該近端向上延伸,該底電極具有一上表面;以及在該絕緣元件上,形成一記憶體元件,該記憶體元件包括可程式化電阻記憶體材料,其中該記憶體元件圍繞該絕緣元件的一外表面,並且在從該遠端向下延伸的該內部中,以在一第一接觸表面,與該底電極的該上表面接觸。
- 如申請專利範圍第8項所述之製造記憶體裝置的方法,其中該記憶體元件具有一下表面,該下表面位於該底電極的該上表面下。
- 如申請專利範圍第8項所述之製造記憶體裝置的方法,其中形成該底電極包括:在由該絕緣元件之該內表面所定義的該內部中,填入一底電極材料;以及從該內部的一上部分,移除該底電極材料,以形成該底電極。
- 如申請專利範圍第8項所述之製造記憶體裝置的方法,其中該內部具有一寬度,該寬度小於一最小特徵尺寸,該最小特徵尺寸用於形成該記憶體裝置之一微影製程。
- 如申請專利範圍第8項所述之製造記憶體裝置的方法,更包括:形成一頂電極,藉由該記憶體元件,與該絕緣元件的該分離,並且與該記憶體元件接觸於一第二接觸表面,其中該第二接觸表面的表面積大於該第一接觸表面的表面積。
- 如申請專利範圍第8項所述之製造記憶體裝置的方法,其中該記憶體元件包括一材料,該材料的熱導率低於該絕緣元件之材料的熱導率。
- 如申請專利範圍第8項所述之製造記憶體裝置的方法,其中該內部在該近端與該遠端具有大致相同的寬度。
- 如申請專利範圍第8項所述之製造記憶體裝置的方法,其中形成該絕緣元件包括:形成一第一材料層,並且在該第一材料層上形成一第二材料層;在該第一和該第二材料層中,形成一介層窗,以暴露該導電性接觸部,其中該介層窗具有一側壁;以及在該介層窗的該側壁上,形成該絕緣元件。
- 如申請專利範圍第15項所述之製造記憶體裝置的方法,其中在該介層窗的該側壁上形成該絕緣元件,包括:在該介層窗中並包含在該介層窗的該側壁上,沈積一 絕緣材料的一層;以及非等向性蝕刻該絕緣材料。
- 如申請專利範圍第15項所述之製造記憶體裝置的方法,其中形成該底電極和形成該記憶體元件包括:在由該絕緣元件之該內表面所定義的該內部中,填入一底電極材料;從該內部的該上部分,移除該底電極材料,以從剩下的底電極材料形成該底電極;移除該第二材料層,以暴露該絕緣元件的該外表面;以及在該內部的該上部分上與在該絕緣元件的該暴露外表面上,沈積一記憶體材料。
- 如申請專利範圍第8項所述之製造記憶體裝置的方法,其中形成該絕緣元件和形成該底電極包括:在一介層窗的一側壁上,形成該絕緣元件;在由該絕緣元件之該內表面所定義的該內部,填入一底電極材料;以及從該內部的該上部分,移除該底電極材料,以從剩餘底電極材料,形成該底電極。
- 一種記憶體裝置,包括:一管狀絕緣元件,具有一內表面與一外表面,該內表面用以定義一內部;一第一電極,位於該內部的一下部分內;一記憶體元件,包括可程式化電阻記憶體材料,位於該內部的一上部分,該內部的該上部分是在一第一接觸表 面與該第一電極的該上表面接觸,該記憶體元件在該上部分內具有一主動區,其中該記憶體元件圍繞該管狀絕緣元件的該外表面;以及一第二電極,與該記憶體元件接觸於一第二接觸表面。
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US20070108430A1 (en) * | 2005-11-15 | 2007-05-17 | Macronix International Co., Ltd. | Thermally contained/insulated phase change memory device and method (combined) |
US20080303014A1 (en) * | 2005-12-20 | 2008-12-11 | Nxp B.V. | Vertical Phase Change Memory Cell and Methods For Manufacturing Thereof |
US20090122588A1 (en) * | 2007-11-14 | 2009-05-14 | Macronix International Co., Ltd. | Phase change memory cell including a thermal protect bottom electrode and manufacturing methods |
TW200947695A (en) * | 2008-04-22 | 2009-11-16 | Macronix Int Co Ltd | Memory cell having a buried phase change region and method for fabricating the same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI717076B (zh) * | 2018-10-31 | 2021-01-21 | 台灣積體電路製造股份有限公司 | 相變化隨機存取記憶體裝置及其製造方法 |
US11139430B2 (en) | 2018-10-31 | 2021-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Phase change random access memory and method of manufacturing |
Also Published As
Publication number | Publication date |
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US20110012079A1 (en) | 2011-01-20 |
US8110822B2 (en) | 2012-02-07 |
TW201103180A (en) | 2011-01-16 |
CN101958398A (zh) | 2011-01-26 |
CN101958398B (zh) | 2012-11-14 |
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