TWI353653B - Patterned strained semiconductor substrate and dev - Google Patents

Patterned strained semiconductor substrate and dev Download PDF

Info

Publication number
TWI353653B
TWI353653B TW094124489A TW94124489A TWI353653B TW I353653 B TWI353653 B TW I353653B TW 094124489 A TW094124489 A TW 094124489A TW 94124489 A TW94124489 A TW 94124489A TW I353653 B TWI353653 B TW I353653B
Authority
TW
Taiwan
Prior art keywords
layer
relaxed
substrate
forming
buffer layer
Prior art date
Application number
TW094124489A
Other languages
English (en)
Chinese (zh)
Other versions
TW200620554A (en
Inventor
Kangguo Cheng
Ramachandra Divakaruni
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200620554A publication Critical patent/TW200620554A/zh
Application granted granted Critical
Publication of TWI353653B publication Critical patent/TWI353653B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Pressure Sensors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW094124489A 2004-07-23 2005-07-20 Patterned strained semiconductor substrate and dev TWI353653B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/710,608 US7384829B2 (en) 2004-07-23 2004-07-23 Patterned strained semiconductor substrate and device

Publications (2)

Publication Number Publication Date
TW200620554A TW200620554A (en) 2006-06-16
TWI353653B true TWI353653B (en) 2011-12-01

Family

ID=35657774

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094124489A TWI353653B (en) 2004-07-23 2005-07-20 Patterned strained semiconductor substrate and dev

Country Status (4)

Country Link
US (4) US7384829B2 (https=)
JP (1) JP5373247B2 (https=)
CN (1) CN100385615C (https=)
TW (1) TWI353653B (https=)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2872626B1 (fr) * 2004-07-05 2008-05-02 Commissariat Energie Atomique Procede pour contraindre un motif mince
US20070267722A1 (en) * 2006-05-17 2007-11-22 Amberwave Systems Corporation Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US20060292719A1 (en) * 2005-05-17 2006-12-28 Amberwave Systems Corporation Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
KR101329388B1 (ko) * 2005-07-26 2013-11-14 앰버웨이브 시스템즈 코포레이션 다른 액티브 영역 물질의 집적회로 집적을 위한 솔루션
US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
US7638842B2 (en) * 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
DE102005047081B4 (de) * 2005-09-30 2019-01-31 Robert Bosch Gmbh Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2
US7777250B2 (en) * 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
WO2008036256A1 (en) * 2006-09-18 2008-03-27 Amberwave Systems Corporation Aspect ratio trapping for mixed signal applications
US7799592B2 (en) * 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
US7875958B2 (en) * 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US20080187018A1 (en) * 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
DE102006051492B4 (de) * 2006-10-31 2011-05-19 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit NMOS- und PMOS-Transistoren mit eingebettetem Si/Ge-Material zum Erzeugen einer Zugverformung und einer Druckverformung und Verfahren zur Herstellung eines solchen Halbleiterbauelements
KR101378987B1 (ko) * 2006-10-31 2014-03-28 어드밴스드 마이크로 디바이시즈, 인코포레이티드 인장성 스트레인 및 압축성 스트레인을 생성시키기 위한 임베드된 Ｓｉ/Ｇｅ 물질을 갖는 ＮＭＯＳ 및 ＰＭＯＳ 트랜지스터를 포함하는 반도체 디바이스
US7888197B2 (en) * 2007-01-11 2011-02-15 International Business Machines Corporation Method of forming stressed SOI FET having doped glass box layer using sacrificial stressed layer
US9508890B2 (en) * 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US7825328B2 (en) * 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8329541B2 (en) * 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
JP5380794B2 (ja) * 2007-06-22 2014-01-08 富士通セミコンダクター株式会社 半導体装置の製造方法および半導体層の形成方法
WO2009035746A2 (en) * 2007-09-07 2009-03-19 Amberwave Systems Corporation Multi-junction solar cells
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) * 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
WO2010033813A2 (en) 2008-09-19 2010-03-25 Amberwave System Corporation Formation of devices by epitaxial layer overgrowth
US20100072515A1 (en) * 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) * 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
DE102008049717B4 (de) * 2008-09-30 2010-10-14 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines Halbleiterbauelements als Transistor mit einem Metallgatestapel mit großem ε und einem kompressiv verspannten Kanal
US20100102393A1 (en) * 2008-10-29 2010-04-29 Chartered Semiconductor Manufacturing, Ltd. Metal gate transistors
JP5562696B2 (ja) * 2009-03-27 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
SG171987A1 (en) 2009-04-02 2011-07-28 Taiwan Semiconductor Mfg Devices formed from a non-polar plane of a crystalline material and method of making the same
US8551845B2 (en) 2010-09-21 2013-10-08 International Business Machines Corporation Structure and method for increasing strain in a device
US8367494B2 (en) 2011-04-05 2013-02-05 International Business Machines Corporation Electrical fuse formed by replacement metal gate process
US8829585B2 (en) * 2011-05-31 2014-09-09 International Business Machines Corporation High density memory cells using lateral epitaxy
DE102011107657A1 (de) * 2011-07-12 2013-01-17 Nasp Iii/V Gmbh Monolithische integrierte Halbleiterstruktur
CN102956497B (zh) * 2011-08-30 2015-04-29 中芯国际集成电路制造(上海)有限公司 晶体管及其形成方法
US8471342B1 (en) * 2011-12-09 2013-06-25 GlobalFoundries, Inc. Integrated circuits formed on strained substrates and including relaxed buffer layers and methods for the manufacture thereof
US9360302B2 (en) * 2011-12-15 2016-06-07 Kla-Tencor Corporation Film thickness monitor
US8994085B2 (en) 2012-01-06 2015-03-31 International Business Machines Corporation Integrated circuit including DRAM and SRAM/logic
US8680576B2 (en) * 2012-05-16 2014-03-25 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS device and method of forming the same
JP5695614B2 (ja) * 2012-08-22 2015-04-08 ルネサスエレクトロニクス株式会社 半導体装置
US8716751B2 (en) 2012-09-28 2014-05-06 Intel Corporation Methods of containing defects for non-silicon device engineering
CN103779221A (zh) * 2012-10-22 2014-05-07 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
US8785907B2 (en) * 2012-12-20 2014-07-22 Intel Corporation Epitaxial film growth on patterned substrate
KR102021765B1 (ko) 2013-06-17 2019-09-17 삼성전자 주식회사 반도체 장치
KR102098900B1 (ko) 2013-06-28 2020-04-08 인텔 코포레이션 측방향 에피택시 과도성장 영역에서의 결함 없는 핀 기반 디바이스의 제조
US9425042B2 (en) * 2013-10-10 2016-08-23 Taiwan Semiconductor Manufacturing Company Limited Hybrid silicon germanium substrate for device fabrication
US20150194307A1 (en) * 2014-01-06 2015-07-09 Globalfoundries Inc. Strained fin structures and methods of fabrication
KR102083632B1 (ko) 2014-04-25 2020-03-03 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9601583B2 (en) * 2014-07-15 2017-03-21 Armonk Business Machines Corporation Hetero-integration of III-N material on silicon
US9437680B1 (en) 2015-03-31 2016-09-06 International Business Machines Corporation Silicon-on-insulator substrates having selectively formed strained and relaxed device regions
US10361219B2 (en) * 2015-06-30 2019-07-23 International Business Machines Corporation Implementing a hybrid finFET device and nanowire device utilizing selective SGOI
TWI677098B (zh) * 2015-10-02 2019-11-11 聯華電子股份有限公司 鰭狀場效電晶體及其製造方法
US10529738B2 (en) * 2016-04-28 2020-01-07 Globalfoundries Singapore Pte. Ltd. Integrated circuits with selectively strained device regions and methods for fabricating same
US9842929B1 (en) * 2016-06-09 2017-12-12 International Business Machines Corporation Strained silicon complementary metal oxide semiconductor including a silicon containing tensile N-type fin field effect transistor and silicon containing compressive P-type fin field effect transistor formed using a dual relaxed substrate
US9773870B1 (en) * 2016-06-28 2017-09-26 International Business Machines Corporation Strained semiconductor device
US10475930B2 (en) 2016-08-17 2019-11-12 Samsung Electronics Co., Ltd. Method of forming crystalline oxides on III-V materials
KR102260807B1 (ko) * 2016-11-30 2021-06-07 가부시키가이샤 리코 산화물 또는 산질화물 절연체 막 형성용 도포액, 산화물 또는 산질화물 절연체 막, 전계 효과형 트랜지스터 및 이들의 제조 방법
US10593672B2 (en) * 2018-01-08 2020-03-17 International Business Machines Corporation Method and structure of forming strained channels for CMOS device fabrication
CN115881812A (zh) * 2021-09-29 2023-03-31 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Family Cites Families (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3602841A (en) * 1970-06-18 1971-08-31 Ibm High frequency bulk semiconductor amplifiers and oscillators
US4853076A (en) * 1983-12-29 1989-08-01 Massachusetts Institute Of Technology Semiconductor thin films
US4665415A (en) * 1985-04-24 1987-05-12 International Business Machines Corporation Semiconductor device with hole conduction via strained lattice
DE3676781D1 (de) * 1985-09-13 1991-02-14 Siemens Ag Integrierte bipolar- und komplementaere mos-transistoren auf einem gemeinsamen substrat enthaltende schaltung und verfahren zu ihrer herstellung.
JPS6476755A (en) 1987-09-18 1989-03-22 Hitachi Ltd Semiconductor device
US4958213A (en) * 1987-12-07 1990-09-18 Texas Instruments Incorporated Method for forming a transistor base region under thick oxide
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US5006913A (en) * 1988-11-05 1991-04-09 Mitsubishi Denki Kabushiki Kaisha Stacked type semiconductor device
US5108843A (en) * 1988-11-30 1992-04-28 Ricoh Company, Ltd. Thin film semiconductor and process for producing the same
US4952524A (en) * 1989-05-05 1990-08-28 At&T Bell Laboratories Semiconductor device manufacture including trench formation
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
US5060030A (en) * 1990-07-18 1991-10-22 Raytheon Company Pseudomorphic HEMT having strained compensation layer
US5081513A (en) * 1991-02-28 1992-01-14 Xerox Corporation Electronic device with recovery layer proximate to active layer
US5371399A (en) * 1991-06-14 1994-12-06 International Business Machines Corporation Compound semiconductor having metallic inclusions and devices fabricated therefrom
US5134085A (en) * 1991-11-21 1992-07-28 Micron Technology, Inc. Reduced-mask, split-polysilicon CMOS process, incorporating stacked-capacitor cells, for fabricating multi-megabit dynamic random access memories
US5391510A (en) * 1992-02-28 1995-02-21 International Business Machines Corporation Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps
US6008126A (en) * 1992-04-08 1999-12-28 Elm Technology Corporation Membrane dielectric isolation IC fabrication
US5561302A (en) * 1994-09-26 1996-10-01 Motorola, Inc. Enhanced mobility MOSFET device and method
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5557122A (en) * 1995-05-12 1996-09-17 Alliance Semiconductors Corporation Semiconductor electrode having improved grain structure and oxide growth properties
KR100213196B1 (ko) * 1996-03-15 1999-08-02 윤종용 트렌치 소자분리
US6403975B1 (en) * 1996-04-09 2002-06-11 Max-Planck Gesellschaft Zur Forderung Der Wissenschafteneev Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates
US5880040A (en) * 1996-04-15 1999-03-09 Macronix International Co., Ltd. Gate dielectric based on oxynitride grown in N2 O and annealed in NO
US5861651A (en) * 1997-02-28 1999-01-19 Lucent Technologies Inc. Field effect devices and capacitors with improved thin film dielectrics and method for making same
US5940736A (en) * 1997-03-11 1999-08-17 Lucent Technologies Inc. Method for forming a high quality ultrathin gate oxide layer
US6309975B1 (en) * 1997-03-14 2001-10-30 Micron Technology, Inc. Methods of making implanted structures
US6025280A (en) * 1997-04-28 2000-02-15 Lucent Technologies Inc. Use of SiD4 for deposition of ultra thin and controllable oxides
US5960297A (en) * 1997-07-02 1999-09-28 Kabushiki Kaisha Toshiba Shallow trench isolation structure and method of forming the same
US20010006249A1 (en) * 1997-09-16 2001-07-05 Eugene A Fitzgerald Co-planar si and ge composite substrate and method of producing same
JP3139426B2 (ja) * 1997-10-15 2001-02-26 日本電気株式会社 半導体装置
US6066545A (en) * 1997-12-09 2000-05-23 Texas Instruments Incorporated Birdsbeak encroachment using combination of wet and dry etch for isolation nitride
US6274421B1 (en) * 1998-01-09 2001-08-14 Sharp Laboratories Of America, Inc. Method of making metal gate sub-micron MOS transistor
KR100275908B1 (ko) * 1998-03-02 2000-12-15 윤종용 집적 회로에 트렌치 아이솔레이션을 형성하는방법
US6361885B1 (en) * 1998-04-10 2002-03-26 Organic Display Technology Organic electroluminescent materials and device made from such materials
US6165383A (en) * 1998-04-10 2000-12-26 Organic Display Technology Useful precursors for organic electroluminescent materials and devices made from such materials
JP4258034B2 (ja) * 1998-05-27 2009-04-30 ソニー株式会社 半導体装置及び半導体装置の製造方法
US5989978A (en) * 1998-07-16 1999-11-23 Chartered Semiconductor Manufacturing, Ltd. Shallow trench isolation of MOSFETS with reduced corner parasitic currents
JP4592837B2 (ja) * 1998-07-31 2010-12-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US6319794B1 (en) * 1998-10-14 2001-11-20 International Business Machines Corporation Structure and method for producing low leakage isolation devices
US6235598B1 (en) * 1998-11-13 2001-05-22 Intel Corporation Method of using thick first spacers to improve salicide resistance on polysilicon gates
US6117722A (en) * 1999-02-18 2000-09-12 Taiwan Semiconductor Manufacturing Company SRAM layout for relaxing mechanical stress in shallow trench isolation technology and method of manufacture thereof
US6255169B1 (en) * 1999-02-22 2001-07-03 Advanced Micro Devices, Inc. Process for fabricating a high-endurance non-volatile memory device
US6350993B1 (en) * 1999-03-12 2002-02-26 International Business Machines Corporation High speed composite p-channel Si/SiGe heterostructure for field effect devices
JP4521542B2 (ja) * 1999-03-30 2010-08-11 ルネサスエレクトロニクス株式会社 半導体装置および半導体基板
US6284626B1 (en) * 1999-04-06 2001-09-04 Vantis Corporation Angled nitrogen ion implantation for minimizing mechanical stress on side walls of an isolation trench
US6281532B1 (en) * 1999-06-28 2001-08-28 Intel Corporation Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering
US6656822B2 (en) * 1999-06-28 2003-12-02 Intel Corporation Method for reduced capacitance interconnect system using gaseous implants into the ILD
US6228694B1 (en) * 1999-06-28 2001-05-08 Intel Corporation Method of increasing the mobility of MOS transistors by use of localized stress regions
US6362082B1 (en) * 1999-06-28 2002-03-26 Intel Corporation Methodology for control of short channel effects in MOS transistors
KR100332108B1 (ko) * 1999-06-29 2002-04-10 박종섭 반도체 소자의 트랜지스터 및 그 제조 방법
TW426940B (en) * 1999-07-30 2001-03-21 United Microelectronics Corp Manufacturing method of MOS field effect transistor
US6483171B1 (en) * 1999-08-13 2002-11-19 Micron Technology, Inc. Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same
US6284623B1 (en) * 1999-10-25 2001-09-04 Peng-Fei Zhang Method of fabricating semiconductor devices using shallow trench isolation with reduced narrow channel effect
US6476462B2 (en) * 1999-12-28 2002-11-05 Texas Instruments Incorporated MOS-type semiconductor device and method for making same
US6221735B1 (en) * 2000-02-15 2001-04-24 Philips Semiconductors, Inc. Method for eliminating stress induced dislocations in CMOS devices
US6531369B1 (en) * 2000-03-01 2003-03-11 Applied Micro Circuits Corporation Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe)
JP3512701B2 (ja) * 2000-03-10 2004-03-31 株式会社東芝 半導体装置及びその製造方法
US6368931B1 (en) * 2000-03-27 2002-04-09 Intel Corporation Thin tensile layers in shallow trench isolation and method of making same
JP2001338988A (ja) * 2000-05-25 2001-12-07 Hitachi Ltd 半導体装置及びその製造方法
JP2003158075A (ja) * 2001-08-23 2003-05-30 Sumitomo Mitsubishi Silicon Corp 半導体基板の製造方法及び電界効果型トランジスタの製造方法並びに半導体基板及び電界効果型トランジスタ
US6493497B1 (en) * 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
US7312485B2 (en) * 2000-11-29 2007-12-25 Intel Corporation CMOS fabrication process utilizing special transistor orientation
JP2002190599A (ja) * 2000-12-20 2002-07-05 Toshiba Corp 半導体装置及びその製造方法
US6563152B2 (en) * 2000-12-29 2003-05-13 Intel Corporation Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel
US20020086497A1 (en) * 2000-12-30 2002-07-04 Kwok Siang Ping Beaker shape trench with nitride pull-back for STI
US6265317B1 (en) * 2001-01-09 2001-07-24 Taiwan Semiconductor Manufacturing Company Top corner rounding for shallow trench isolation
US6852602B2 (en) * 2001-01-31 2005-02-08 Matsushita Electric Industrial Co., Ltd. Semiconductor crystal film and method for preparation thereof
US6403486B1 (en) * 2001-04-30 2002-06-11 Taiwan Semiconductor Manufacturing Company Method for forming a shallow trench isolation
JP3875040B2 (ja) * 2001-05-17 2007-01-31 シャープ株式会社 半導体基板及びその製造方法ならびに半導体装置及びその製造方法
US6531740B2 (en) * 2001-07-17 2003-03-11 Motorola, Inc. Integrated impedance matching and stability network
JP2003031813A (ja) * 2001-07-19 2003-01-31 Matsushita Electric Ind Co Ltd 半導体装置
US6498358B1 (en) 2001-07-20 2002-12-24 Motorola, Inc. Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
US6908810B2 (en) * 2001-08-08 2005-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of preventing threshold voltage of MOS transistor from being decreased by shallow trench isolation formation
AU2002331077A1 (en) * 2001-08-13 2003-03-03 Amberwave Systems Corporation Dram trench capacitor and method of making the same
JP2003060076A (ja) * 2001-08-21 2003-02-28 Nec Corp 半導体装置及びその製造方法
JP2005504436A (ja) 2001-09-21 2005-02-10 アンバーウェーブ システムズ コーポレイション 画定された不純物勾配を有するひずみ材料層を使用する半導体構造、およびその構造を製作するための方法。
US20030057184A1 (en) * 2001-09-22 2003-03-27 Shiuh-Sheng Yu Method for pull back SiN to increase rounding effect in a shallow trench isolation process
US6656798B2 (en) * 2001-09-28 2003-12-02 Infineon Technologies, Ag Gate processing method with reduced gate oxide corner and edge thinning
US6635506B2 (en) * 2001-11-07 2003-10-21 International Business Machines Corporation Method of fabricating micro-electromechanical switches on CMOS compatible substrates
US6600170B1 (en) * 2001-12-17 2003-07-29 Advanced Micro Devices, Inc. CMOS with strained silicon channel NMOS and silicon germanium channel PMOS
US6461936B1 (en) * 2002-01-04 2002-10-08 Infineon Technologies Ag Double pullback method of filling an isolation trench
US6621392B1 (en) * 2002-04-25 2003-09-16 International Business Machines Corporation Micro electromechanical switch having self-aligned spacers
US6972245B2 (en) * 2002-05-15 2005-12-06 The Regents Of The University Of California Method for co-fabricating strained and relaxed crystalline and poly-crystalline structures
JP2004165197A (ja) * 2002-11-08 2004-06-10 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7388259B2 (en) * 2002-11-25 2008-06-17 International Business Machines Corporation Strained finFET CMOS device structures
JP2004193203A (ja) * 2002-12-09 2004-07-08 Matsushita Electric Ind Co Ltd 電界効果トランジスタおよびその製造方法
US6974981B2 (en) 2002-12-12 2005-12-13 International Business Machines Corporation Isolation structures for imposing stress patterns
US6825529B2 (en) * 2002-12-12 2004-11-30 International Business Machines Corporation Stress inducing spacers
US6717216B1 (en) * 2002-12-12 2004-04-06 International Business Machines Corporation SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device
US6878611B2 (en) * 2003-01-02 2005-04-12 International Business Machines Corporation Patterned strained silicon for high performance circuits
JP4524190B2 (ja) * 2003-01-08 2010-08-11 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体構造体を製造する方法
US6887798B2 (en) 2003-05-30 2005-05-03 International Business Machines Corporation STI stress modification by nitrogen plasma treatment for improving performance in small width devices
US7279746B2 (en) 2003-06-30 2007-10-09 International Business Machines Corporation High performance CMOS device structures and method of manufacture
TWI270986B (en) * 2003-07-29 2007-01-11 Ind Tech Res Inst Strained SiC MOSFET
US7119403B2 (en) * 2003-10-16 2006-10-10 International Business Machines Corporation High performance strained CMOS devices
US6977194B2 (en) 2003-10-30 2005-12-20 International Business Machines Corporation Structure and method to improve channel mobility by gate electrode stress modification
US8008724B2 (en) * 2003-10-30 2011-08-30 International Business Machines Corporation Structure and method to enhance both nFET and pFET performance using different kinds of stressed layers
US7015082B2 (en) * 2003-11-06 2006-03-21 International Business Machines Corporation High mobility CMOS circuits
US7122849B2 (en) * 2003-11-14 2006-10-17 International Business Machines Corporation Stressed semiconductor device structures having granular semiconductor material
US7247912B2 (en) * 2004-01-05 2007-07-24 International Business Machines Corporation Structures and methods for making strained MOSFETs
JP2005197405A (ja) * 2004-01-06 2005-07-21 Toshiba Corp 半導体装置とその製造方法
US7205206B2 (en) * 2004-03-03 2007-04-17 International Business Machines Corporation Method of fabricating mobility enhanced CMOS devices
JP4177775B2 (ja) * 2004-03-16 2008-11-05 株式会社東芝 半導体基板及びその製造方法並びに半導体装置
US7087965B2 (en) * 2004-04-22 2006-08-08 International Business Machines Corporation Strained silicon CMOS on hybrid crystal orientations
US7504693B2 (en) * 2004-04-23 2009-03-17 International Business Machines Corporation Dislocation free stressed channels in bulk silicon and SOI CMOS devices by gate stress engineering
US7354806B2 (en) * 2004-09-17 2008-04-08 International Business Machines Corporation Semiconductor device structure with active regions having different surface directions and methods

Also Published As

Publication number Publication date
US20080061317A1 (en) 2008-03-13
US9515140B2 (en) 2016-12-06
JP5373247B2 (ja) 2013-12-18
JP2006041516A (ja) 2006-02-09
CN100385615C (zh) 2008-04-30
US7384829B2 (en) 2008-06-10
US20060019462A1 (en) 2006-01-26
US9053970B2 (en) 2015-06-09
US20100109049A1 (en) 2010-05-06
US7682859B2 (en) 2010-03-23
CN1725437A (zh) 2006-01-25
TW200620554A (en) 2006-06-16
US20080135874A1 (en) 2008-06-12

Similar Documents

Publication Publication Date Title
TWI353653B (en) Patterned strained semiconductor substrate and dev
CN101540326B (zh) 半导体元件
TWI254355B (en) Strained transistor with hybrid-strain inducing layer
TW200826160A (en) Semiconductor heterostructure
US8097508B2 (en) Method and structure for performing a chemical mechanical polishing process
TW200539381A (en) Semiconductor manufacturing method and semiconductor device
JP2012033952A (ja) 半導体素子分離方法
US20020190342A1 (en) Method of fabricating semiconductor device having trench isolation structure
KR20200036696A (ko) 감소된 워피지 및 더 나은 트렌치 충전 성능을 갖는, 반도체 디바이스를 제조하는 방법
JP2001319968A (ja) 半導体装置の製造方法
TW200805479A (en) Method of manufacturing a semiconductor device
JP2013542599A (ja) 半導体ウェハを処理するための方法、半導体ウェハおよび半導体デバイス
CN102468215B (zh) 沟槽隔离结构及其形成方法
TW201117277A (en) Integrated circuit wafer and dicing method thereof
CN111199932B (zh) 穿硅通孔结构及其制造方法
CN1269203C (zh) 半导体装置及其制造方法
TWI231965B (en) Method for manufacturing a semiconductor device
TWI682547B (zh) 半導體結構以及其製作方法
TWI258856B (en) Semiconductor device and manufacturing method thereof
US7776624B2 (en) Method for improving semiconductor surfaces
TWI633647B (zh) 半導體裝置
TWM359788U (en) Composite wafer bonding apparatus
CN120033141A (zh) 半导体器件隔离沟槽结构的制备方法
TWI550873B (zh) 半導體元件及其製造方法
US8486820B2 (en) Semiconductor device manufacturing method

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent