M359788 五、新型說明： 【新型所屬之技術領域】 .* I創作是有關於-種晶圓製程機台，且特別是有關於—種 _ 複合晶圓（Composite Wafer)壓合褒置。 【先前技術】 在絕緣體上有矽（Silicon On Insulator;SOI)基材上建構的互 補式金屬_氧化層_半導體（c〇mplementary | . Metd-Oxide-Semiconductor; CMOS)裝置，具有寄生電容減小且 載體遷移率增加的優異性能。若與射頻（Radi〇 Frequency ; RF) 被動組件整合更可得到高性能、高集積度、且低成本的射頻積 體電路。 習知技術大多採用複合晶圓來建構射頻積體電路，以降低 散逸損耗（Dissipation Loss)。其中藍寶石（Sapphire)具有可透射 射頻波信號、優異絕緣特性及導熱性，是一種建構射頻積體電 路的絕緣基材。傳統複合晶圓一般是採用沈積退火製程，在藍 | 寶石基材上磊晶生長矽層。但由於矽層與藍寶石間的晶格失配 問’會在石夕層中形成大量的線差排（Threading Dislocations) 而引發晶格位置錯亂、雙晶（Twins)、及微裂缝等缺陷，進而產 生較大的漏電流，大幅降低電路元件的性能。故目前較佳的做 法則是利用晶圓接合技術，以壓合的方式將預製的矽晶圓（基材） 直接接合於藍寶石基材上，藉以製造出具有多層結構的複合晶 圓。 請參照第1圖，第1圖係根據習知技術所繪式的一種製作 複合晶圓之晶圓壓合裝置100的結構剖面圖。晶圓壓合裝置100 4 M359788 '包括有個壓合座1〇7以及一個壓合頭i〇6。其中壓合座107 具有個尺寸實質等於藍寶石基材1〇5的第一凹室1〇1以及一 個尺寸λ質等於矽晶圓1〇4的第二凹室1〇2。其中第二凹室1〇2 开y成於第一凹室1〇1的底面1〇1&中，且第一凹室ι〇ι與第二凹 室1〇2具有同一軸心103，使第一凹室101與第二凹室1〇2形 成一個階梯狀結構。進行晶圓壓合的操作時，以壓合頭 (Compression Head)1〇6熱壓藍寶石基材1〇5的方式使藍寶石基 材105與矽晶圓1〇4接合。 ^ 由於藍寶石基材105的尺寸大於矽晶圓104，且為了與藍 寶石基材105有效接合，矽晶圓1〇4的厚度T1必需實質大於 第一凹至102的深度D1，因此使藍寶石基材1〇5與第一凹室 1〇1的底面101a產生一個懸空狀態的高低落差g，再加上矽晶 圓1〇4和藍寶石基材105皆屬於剛性材質，藍寶石基材1〇5常 因壓合應力過大而碎裂失效。 為解決此一問題，請參照第2圖，第2圖係根據習知技術 所繪示的另一種製作複合晶圓之晶圓壓合裝置200的結構剖面 _ 圖。其中晶圓壓合裝置200包括一個壓合座2〇3、對位治具 (Alignment T〇〇1)202以及一個壓合頭1〇6。其中壓合座2〇3具 有一個四室201 ;對位治具202覆蓋於凹室201上。凹室201 的尺寸實質可容納藍寶石基材1 〇5 ;對位治具202則具有一個 貫穿孔202a可容納矽晶圓104穿設於其中，並置於藍寶石基材 105之上。由於尺寸較小的矽晶圓1〇4係平放於較大尺寸之藍 寶石基材105上，因此當以壓合頭丨〇6施加應力使矽晶圓工〇4 與藍寶石基材105接合時，並不會產生藍寶石基材1〇5碎裂的 問題。 5 M359788 、 ；對位治具202並未四疋，！兮製裎中常因雷勒 或擠壓使對位治具2G2與藍f石基材⑼對位失準 失=問題。再者，為了使石夕晶圓刚對準藍寶石〇5, W的晶圓壓合座（107或203)，都採用尺寸實質相同的凹槽或 =至4來卡㈣晶圓1G4或藍f石基材1G5，然此_設計在 刼作時’必須額外增加置入及取出的動作’且报容易因此造 矽晶圓104或藍寶石基材1〇5的損傷。 ^此有需要提供—種結構單純且操作簡單的複合晶圓壓M359788 V. New Description: [New Technology Area] .* I Creation is about a kind of wafer processing machine, and especially related to _ composite wafer (Composite Wafer) pressing device. [Prior Art] A complementary metal-oxide-semiconductor (CMOS) device built on a silicon-on-insulator (SOI) substrate has a parasitic capacitance reduction And the excellent performance of the carrier mobility increase. If integrated with radio frequency (RF) passive components, high-performance, high-accumulation, and low-cost RF integrated circuits are available. Conventional techniques mostly use composite wafers to construct RF integrated circuits to reduce Dissipation Loss. Among them, sapphire (Sapphire) has an RF-wave signal, excellent insulation properties and thermal conductivity. It is an insulating substrate for constructing RF integrated circuits. Conventional composite wafers are typically deposited by epitaxial annealing on a blue | gem substrate. However, due to the lattice mismatch between the ruthenium layer and the sapphire, a large number of Threading Dislocations are formed in the sap layer to cause defects such as lattice position disorder, twins, and micro-cracks. Produces large leakage currents, greatly reducing the performance of circuit components. Therefore, it is currently preferred to use a wafer bonding technique to directly bond a prefabricated tantalum wafer (substrate) to a sapphire substrate in a press-fit manner to produce a composite crystal having a multilayer structure. Referring to Fig. 1, a first embodiment is a cross-sectional view showing a structure of a wafer bonding apparatus 100 for fabricating a composite wafer according to the conventional art. The wafer press unit 100 4 M359788 'includes a press seat 1〇7 and a press head i〇6. The press seat 107 has a first recess 1〇1 having a size substantially equal to the sapphire substrate 1〇5 and a second recess 1〇2 having a size λ equal to the 矽 wafer 1〇4. The second recess 1〇2 is opened in the bottom surface 1〇1& of the first recess 1〇1, and the first recess ι〇1 and the second recess 1〇2 have the same axis 103, so that The first recess 101 and the second recess 1〇2 form a stepped structure. In the wafer press-bonding operation, the sapphire substrate 105 and the tantalum wafer 1〇4 are bonded to each other by hot pressing the sapphire substrate 1〇5 with a Compression Head 1〇6. Since the sapphire substrate 105 has a larger size than the ruthenium wafer 104, and for effective bonding with the sapphire substrate 105, the thickness T1 of the ruthenium wafer 〇4 must be substantially greater than the depth D1 of the first recess to 102, thus making the sapphire substrate 1〇5 and the bottom surface 101a of the first recess 1〇1 generate a floating height difference g, and the tantalum wafer 1〇4 and the sapphire substrate 105 are both rigid materials, and the sapphire substrate 1〇5 often causes The pressing stress is too large and the chipping fails. In order to solve this problem, please refer to FIG. 2, which is a structural cross-sectional view of another wafer bonding apparatus 200 for fabricating a composite wafer according to the prior art. The wafer pressing device 200 includes a press seat 2〇3, an alignment fixture (Alignment T〇〇1) 202, and a press head 1〇6. The press seat 2〇3 has a four-chamber 201; the alignment fixture 202 covers the recess 201. The recess 201 is substantially sized to accommodate the sapphire substrate 1 〇 5; the alignment fixture 202 has a through hole 202a through which the raft wafer 104 is placed and placed over the sapphire substrate 105. Since the smaller-sized silicon wafer 1〇4 is laid flat on the larger-sized sapphire substrate 105, when the stress is applied to the bonding head 丨〇6 to bond the silicon wafer workpiece 4 to the sapphire substrate 105, , does not produce the problem of sapphire substrate 1〇5 fragmentation. 5 M359788, ; the position fixture 202 is not four,! In the tanning system, the alignment fixture 2G2 and the blue f stone substrate (9) are often misaligned due to the tension or extrusion. Furthermore, in order to make the Shixi wafer just aligned with the sapphire 〇5, W wafer press seat (107 or 203), the grooves of substantially the same size or = to 4 cards (4) wafer 1G4 or blue f The stone substrate 1G5, however, is designed to have an additional "addition and removal action" during the operation, and it is easy to damage the wafer 104 or the sapphire substrate 1〇5. ^ There is a need to provide a composite wafer pressure that is simple in structure and simple to operate.
口裝置’可解決f知技術之壓合過程中所產生的對 材碎裂的問題。 穴+丨丞 【新型内容】 本創作的目的是在提供一種複合晶圓壓合裝置，包括：底 座、對位治具以及壓合頭。底座具有承載面，且承載面上形^ 有複數個凹室，藉以在承載面定義出_個預設 座晶圓。對位治具覆蓋於承載面上方，具有一下表面= φ Μ及複數個凸緣’其中下表面係面對承載面，複數個凸緣係凸 設^下表面，且與承載面上複數個凹室匹配，並延伸進入這些 凹至之中，藉以將基座晶圓管制於預設區域之中，對位治具的 ^ 口則貫穿其下表面，以使—部分的基座晶圓暴露於外，藉以 容許元件晶圓穿設於開口之中並與基座晶圓接觸。壓合頭設於 對位治具上方，用來對元件晶圓施予一應力。 根據以上所述之實施例，本創作的技術特徵在於提供一種 結構單純且操作簡單的複合晶圓壓合裝置，此一複合晶圓壓合 裝置係一個平面底座’並藉由與平面底座卡合的對位治具將基 6 M359788 座晶圓管制於-預設區域，再藉由貫穿對位治具的—個開口， 將基座晶圓預定用來與元件晶圓接合的部分暴露出來，使一個 元件晶圓可經開口平穩並準確地放置於基座晶圓上的預設位 置，然後藉由壓合頭施加一應力使基座晶圓和元件晶圓彼此接 合。 由於本創作的實施例係施加應力於具有較小尺寸之元件 晶圓’使其接合於較大尺寸之基座晶圓上，並採用相互卡人的 平面底座和對位治具來進行基座晶圓和元件晶圓的對位校 準，以取代習知技術採用凹室來固定或對準基座晶圓和元件晶 圓的方j因此不僅可改善習知技術基座晶圓和元件晶圓對位 不易及容易碎裂的問題，且晶圓的壓合步驟也不需要額外的置 入及取出的動作，達到降低製程成本的目的。 【實施方式】 本創作的Λ %方式是在供—種結構單純且操作簡單的複 合晶圓壓合裝置。 ，為讓本創作之目的、特徵與優點能更明顯易懂，特提一種 製:複^晶圓的壓合裝置作為較佳實施例來進—步說明。其中 值得注意的是，下述實施例僅為了說明本創作的技術特徵，並 、阳制本創作的申请專利範圍。本創作實施例所提供的創 作概念與技術手段，也適用於其他類似的結構中，因此下述的 ^合晶圓的麼合裝置不僅適用於石夕晶圓與藍寶石基材的壓 。’同也適用於其他任兩種半導體基材間的壓合製程。 、其中複合晶圓壓合裝置300包括：底座301、對位治具3〇2 以及壓合頭303。請參照第3α圖至第3D圖，第Μ圖係根據 M359788 本創作的較佳實施例所繪示的一種複合晶圓壓合裝置3〇〇的结 構剖面圖。帛3B圖係繪示帛3A圖之底座3Q1的結構俯視圖 第3C圖係繪示第3A圖之對位治具3〇2的結構俯視圖。第 圖係繪示第3A圖之治具3G2的結構底視圖。第3E圖係繪示第 3 A圖之對位治具3 〇2的立體結構示意圖。 底座301較佳係-金屬基座，具有一個用來承載基座晶圓 3〇的承載面301a。其中承載面3〇la上形成有至少兩個以上的 凹室，藉以在承載面301a上定義出一個預設區域3〇lb。例如， 在本創作的一較佳實施例之中，基座晶圓3〇係一種由藍寶石 (Sapphire)所構成的圓开》藍寶石基材。而這些凹室係由四個弧形 溝槽304a、304b、304c* 3〇4d所組成，並在承載面3〇ia上環 繞出—個圓形區域301b。且此—圓形區域3〇lb具有與圓形藍 寶石基材實質相等的第一尺寸。 對位治具302位於底座301的承載面3〇la上方。在本創作 的一個較佳實施例之中，對位治具搬可以是一種由金屬殼體 所構成的上蓋（以下簡稱為上蓋3〇2)，覆蓋於底座3〇1的承載面 301a上方。其中上蓋3〇2具有一個面對底座之承載面π卜 的下表面302a、一個貝穿下表面3〇2a的開口 3〇2b以及至少兩 個：上的凸緣。在本創作的一較佳實施例之中，凸緣係凸設於 上盍302的下表面的複數個凸出部305a、305b、305c和305d， 並且與底座301之承載面3〇la的四個弧形溝槽3〇物、、 304c和3〇4d相匹配，用以延伸進弧形溝槽3〇4a、3〇仆、 和304d之中。 亦即疋s兒，每一個弧形凸出部3〇5a、3〇5b、3〇5c和Μ% I伸進入弧形溝槽304a、3〇4b、3〇4c和3〇牝之一者中。例如 M359788 .在本實施例之中，凸出部305a對應並延伸進入弧形溝槽3〇4a .之中；凸出部3〇5b對應並延伸進入弧形溝槽3〇仆之中；凸出部 、3〇5c對應並延伸進入弧形溝槽3〇4c之中；以及凸出部3〇5d對應 並延伸進入弧形溝槽304d之中。 由於在本創作的實施例之中，每一個弧形凸出部3〇5a、 305b、歡或3G5d的高度實質大於其所對應的弧形溝槽熟、 304b、304c或304d的第一深度D31，而且弧形凸出部觀、 305b、305c或305d的高度實質大於等於派形溝槽3〇4a、難、 鲁304c或304d的第一深度D31加上基座晶圓％的第一厚度 T31。因此，每一個弧形凸出部3〇5a、3〇外、3〇兄或3〇兇的 一部分將會由其所對應的弧形溝槽3〇4&、3〇仆、3〇扣或3〇4d 中向外露出而形成-弧形檔牆，可藉以將基座晶圓3〇管制於 圓形區域301b之中。在本實施例之中，其中弧形凸出部她、 3〇5b、305c或305d的高度實質等於其所對應的孤形溝槽她、 3〇4c或304d的第一深度D1加上基座晶圓3〇的第一厚 度 T31。 φ 另外值得注意的是，在本創作的一些實施例之中，每一個 弧形凸出部3〇5a、3〇5b、3〇5c或與其對應的弧形溝槽 则a、3〇4b、3()4e或·係彼此共形地卡合。但也因如此上 蓋3〇2與底& 301車交不易進行卡合。因此在本創作的較佳實施 例^中，每—個弧形凸出部3〇5a、305b、305c或305d之兩側 '立壁具有—個第—斜角(請參照第3D圖）；以及每—個弧形 凸出邛305a、305b、305c或305d由上蓋3〇2之下表面3〇2a - 料延伸的—端具有一個第二斜角310(請參照第3A圖），使每 個弧形凸出部305a、3〇5b、305c或305d由下表面3023往外 9 M359788 延伸的兩側立壁及一端逐漸變窄。藉此，當弧形凸出部3〇5a、 3〇5b、305c或305d在進行上蓋3〇1與底座3〇2的卡合步驟時， 可以較容易地延伸進入弧形溝槽3〇4a、3〇朴、3〇4c或％牝 中。 貫穿下表面302a的開口 302b可以將一部分的基座晶圓3〇 暴露於外，以容許元件晶圓31置入開口 3〇2b之中，並與基座 晶圓30暴露出來的部分接觸。例如，在本創作的較佳實施例 之中’元件晶81 31係-種由多晶⑦或非晶料形成的圓形石夕 基材。開口 302b則是一個與元件晶圓實31質（第二）尺寸相等 的圓形開口。且開口 302b實質與圓形區域3〇lb同一軸心3〇6。 在本實施例中，由於開口 302b的第二尺寸S2小於預設區 域301b的第一尺寸S1，因此置於開口 3〇沘中的元件晶圓3ι 也小於置於預設區域301b中的基座晶圓3(^且為了方便將元 件晶圓31置入開口 302b之中，在本實施例的開口 3〇孔具有 一個由上蓋302的上表面30及往下表面3〇2a延伸的一傾斜角 度308,使開口 3021)靠近上蓋3〇2之上表面3〇2c的第三尺寸 S3實質大於上蓋3〇2之下表面3〇2a的第二尺寸s2;而靠近上 蓋302之下表面302a的第二尺寸S2實質等於元件晶圓31。 另外，在本實施例之中，上蓋302開口 3〇2b的邊緣還具 有一個定位標記，例如一個缺刻標記3〇7，用來確保元件晶圓 31置入開口 302b時，可以一個預設方位與基座晶圓3〇接觸。 壓合頭303設於上蓋302的上方，用來對元件晶圓31 ^ 予一應力，使元件晶圓31與基座晶圓3〇接合。在本實施例中， 壓合頭303可以是一種設於上蓋302開口 3〇扑上方的—種熱 壓合頭。又為了使壓合頭303所提供的應力有效地施加於元 M359788 晶圓31上，因此開口 3〇2b的 31 ΛΛ^ _ ^ ^ 力/木度D32貫質小於元件晶® 、第一厚度T32，以確保元件晶圓3〗 Γ7 ^ 項鳊此夠由上蓋302 、汗 2b路出，並與壓合頭3 03接觸。The mouth device can solve the problem of cracking of the material generated during the pressing process of the prior art. Hole + 丨丞 [New content] The purpose of this creation is to provide a composite wafer pressing device, including: a base, a counter fixture and a press head. The base has a bearing surface, and a plurality of recesses are formed on the bearing surface, thereby defining a preset wafer on the bearing surface. The alignment fixture covers the top of the bearing surface and has a lower surface = φ Μ and a plurality of flanges, wherein the lower surface faces the bearing surface, the plurality of flanges are convexly disposed on the lower surface, and the plurality of concave surfaces on the bearing surface The chambers are matched and extend into the recesses to control the susceptor wafers in the predetermined area, and the aligners of the aligners pass through the lower surface thereof to expose the pedestal wafers to In addition, the component wafer is allowed to pass through the opening and be in contact with the susceptor wafer. The press head is placed above the alignment fixture to apply a stress to the component wafer. According to the embodiments described above, the technical feature of the present invention is to provide a composite wafer pressing device which is simple in structure and simple in operation, and the composite wafer pressing device is a flat base 'and is engaged with the flat base The alignment fixture controls the base 6 M359788 wafer in a predetermined area, and exposes a portion of the susceptor wafer intended to be bonded to the component wafer by an opening through the alignment fixture. A component wafer can be smoothly and accurately placed through a predetermined position on the susceptor wafer, and then a stress is applied by the nip to bond the susceptor wafer and the component wafer to each other. Since the embodiment of the present invention applies stress to a wafer wafer having a smaller size, it is bonded to a larger-sized susceptor wafer, and the pedestal is implemented by using a planar base and a matching fixture. In-situ alignment of wafer and component wafers to replace conventional methods of using a recess to secure or align the pedestal wafer and component wafers, thereby improving not only conventional susceptor wafers and component wafers The problem of easy alignment and easy chipping, and the step of pressing the wafer does not require additional insertion and removal operations, thereby reducing the cost of the process. [Embodiment] The % method of the present invention is a composite wafer bonding apparatus which is simple in structure and simple in operation. In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, a system for pressing a wafer is described as a preferred embodiment. It is to be noted that the following embodiments are merely illustrative of the technical features of the present invention, and the scope of the patent application of the present invention. The creation concepts and technical means provided by the present embodiment are also applicable to other similar structures. Therefore, the following wafer bonding apparatus is not only applicable to the pressure of the Shixi wafer and the sapphire substrate. The same applies to the press-bonding process between any two other semiconductor substrates. The composite wafer pressing device 300 includes a base 301, an alignment fixture 3〇2, and a pressing head 303. Referring to Figures 3a through 3D, the drawings are a cross-sectional view of a composite wafer press apparatus 3A according to a preferred embodiment of the M359788.帛3B is a top view of the structure of the base 3Q1 of the 帛3A diagram. Fig. 3C is a plan view showing the structure of the aligning fixture 3〇2 of Fig. 3A. The figure is a bottom view of the structure of the fixture 3G2 of Fig. 3A. Fig. 3E is a schematic view showing the three-dimensional structure of the counter fixture 3 〇 2 in Fig. 3A. The base 301 is preferably a metal base having a bearing surface 301a for carrying the base wafer. At least two or more recesses are formed in the bearing surface 3〇1a, thereby defining a predetermined area 3〇1b on the bearing surface 301a. For example, in a preferred embodiment of the present invention, the susceptor wafer 3 is a sapphire substrate composed of sapphire. These cavities are composed of four arcuate grooves 304a, 304b, 304c* 3〇4d, and a circular area 301b is wound around the bearing surface 3〇ia. And - the circular area 3 〇 lb has a first dimension substantially equal to the circular sapphire substrate. The alignment fixture 302 is located above the bearing surface 3〇la of the base 301. In a preferred embodiment of the present invention, the alignment fixture can be an upper cover (hereinafter simply referred to as an upper cover 3〇2) made of a metal casing, covering the bearing surface 301a of the base 3〇1. The upper cover 3〇2 has a lower surface 302a facing the bearing surface π of the base, an opening 3〇2b of a shell-through surface 3〇2a, and at least two upper flanges. In a preferred embodiment of the present invention, the flange is formed by a plurality of projections 305a, 305b, 305c, and 305d protruding from the lower surface of the upper jaw 302, and four with the bearing surface 3〇la of the base 301. The arcuate grooves 3, 304c and 3〇4d are matched to extend into the arcuate grooves 3〇4a, 3〇, and 304d. That is, each of the arcuate projections 3〇5a, 3〇5b, 3〇5c, and Μ% I extends into one of the arcuate grooves 304a, 3〇4b, 3〇4c, and 3〇牝in. For example, M359788. In the present embodiment, the protrusions 305a correspond to and extend into the curved grooves 3〇4a. The protrusions 3〇5b correspond to and extend into the curved grooves 3; The upper portion, 3〇5c corresponds to and extends into the curved groove 3〇4c; and the protruding portion 3〇5d corresponds to and extends into the curved groove 304d. In the embodiment of the present invention, the height of each of the curved projections 3〇5a, 305b, Huan or 3G5d is substantially greater than the corresponding first depth D31 of the curved groove cooked, 304b, 304c or 304d. And the height of the arcuate projections, 305b, 305c or 305d is substantially greater than or equal to the first depth D31 of the pied trenches 3〇4a, 难, 鲁304c or 304d plus the first thickness T31 of the susceptor wafer% . Therefore, each of the arcuate projections 3〇5a, 3〇, 3〇 or 3〇 will be replaced by the corresponding curved grooves 3〇4&, 3〇 servant, 3〇 buckle or The 〇4d is exposed outwardly to form a curved wall, whereby the susceptor wafer 3 can be controlled in the circular area 301b. In the present embodiment, wherein the height of the arcuate projections, 3〇5b, 305c or 305d is substantially equal to the corresponding depth of the solitary groove she, 3〇4c or 304d, plus the base The first thickness T31 of the wafer 3〇. φ It is also worth noting that in some embodiments of the present creation, each of the arcuate projections 3〇5a, 3〇5b, 3〇5c or the corresponding curved grooves a, 3〇4b, 3() 4e or · are conformally engaged with each other. However, because of this, the cover 3〇2 and the bottom & 301 car are not easy to engage. Therefore, in the preferred embodiment of the present invention, the two sides of each of the arcuate projections 3〇5a, 305b, 305c or 305d have a first oblique angle (please refer to FIG. 3D); Each of the arcuate projections 305a, 305b, 305c or 305d has a second oblique angle 310 (refer to FIG. 3A) by the end of the upper surface 3〇2a of the upper cover 3〇2 (refer to FIG. 3A), so that each The curved projections 305a, 3b, 5b, 305c or 305d are gradually narrowed by the side walls and one end of the lower surface 3023 extending outwardly from the M M. Thereby, when the arcuate projections 3〇5a, 3〇5b, 305c or 305d perform the engaging step of the upper cover 3〇1 and the base 3〇2, the curved grooves 3〇4a can be easily extended. , 3 simple, 3〇4c or %牝. The opening 302b extending through the lower surface 302a may expose a portion of the susceptor wafer 3A to allow the component wafer 31 to be placed in the opening 3 〇 2b and in contact with the exposed portion of the susceptor wafer 30. For example, in the preferred embodiment of the present invention, the "element crystal 81 31-type" is a circular stone substrate formed of polycrystalline 7 or amorphous material. The opening 302b is a circular opening equal to the size (second) of the component wafer. And the opening 302b is substantially the same axis 3〇6 as the circular area 3〇1b. In this embodiment, since the second size S2 of the opening 302b is smaller than the first size S1 of the preset region 301b, the component wafer 3ι placed in the opening 3〇沘 is also smaller than the pedestal placed in the preset region 301b. The wafer 3 (and for the convenience of placing the component wafer 31 into the opening 302b, the opening 3 of the present embodiment has an inclined angle extending from the upper surface 30 and the lower surface 3〇2a of the upper cover 302 308, the third dimension S3 of the opening 3021) near the upper surface 3〇2c of the upper cover 3〇2 is substantially larger than the second dimension s2 of the lower surface 3〇2a of the upper cover 3〇2; and the first surface 302a of the upper cover 302 The second size S2 is substantially equal to the component wafer 31. In addition, in the embodiment, the edge of the opening 3〇2b of the upper cover 302 further has a positioning mark, such as a nick mark 3〇7, for ensuring that the component wafer 31 can be placed in the opening 302b in a predetermined orientation. The susceptor wafer 3 is in contact. The bonding head 303 is disposed above the upper cover 302 for stressing the component wafer 31 to bond the component wafer 31 to the pedestal wafer 3. In this embodiment, the pressing head 303 may be a type of thermal compression head disposed above the opening of the upper cover 302. In order to effectively apply the stress provided by the press-bonding head 303 to the wafer M31788, the 31 ΛΛ^ _ ^ ^ force/wood D32 of the opening 3〇2b is less than the element crystal®, the first thickness T32. In order to ensure that the component wafer 3 Γ 7 ^ item is enough to be taken out by the upper cover 302 and the sweat 2b, and is in contact with the press-fit head 03.
根據以上所述之實施例，本創作的技術特徵在於提供 純且操作簡單的複合晶圓壓合裝置，此—複合晶圓壓合 裝置係一個平面底座’並藉由與平面底座卡合的對位治呈將基 座晶圓管制於-預設區域，再藉由貫穿對位治具的—個開口了 將預定用來與元件晶圓接合的部分暴_，使一個元件晶圓 可經開口平穩並準確地放置於基座晶圓上的預設位置，然後藉 由壓合頭施加-應力使基座晶圓和元件晶圓彼此接合。B 由於本創作的實施例係施加應力於具有較小尺寸之元件 晶圓，使其接合於較大尺寸之基座晶圓上，並採用互卡合的平 面底座和對位治具來進行基座晶圓和元件晶圓的對位校準，以 取代習知技術採用凹室來固定或對準基座晶圓和元件晶圓的 方式，因此不僅可改善習知技術基座晶圓和元件晶圓對位不易 及容易碎裂的問題，且晶圓的壓合步驟也不需要額外的置入及 取出的動作’達到降低製程成本的目的。 雖然本創作已以較佳實施例揭露如上，然其並非用以限定 本創作，任何相關技術領域具有通常知識者，在不脫離本創作 之精神和範圍内，當可作各種之更動與潤飾。因此本創作之保 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本創作之上述和其他目的、特徵、優點與實施例能更 明顯易懂，所附圖式之詳細說明如下： 11 M359788 - 第1圖係根據習知技術所繪式的一種制你、t人s 1種製作複合晶圓之晶圓 壓合座的結構剖面圖。 f2圖係根據習知技術所緣示的另—種製作複合晶圓之晶 圓壓合座的結構剖面圖。 第3 A圖係根據本創作的較佳會餘也t 仏 平乂性貫％例所繪示的一種複合晶 圓壓合裝置的結構剖面圖。 第3B圖係繪示第3A圖之底座的結構俯視圖。 第3C®歸示第3A圖之對位治具的結構俯視圖。 丨 第3D圖係繪不第3A圖之治具的結構底視圖。 第3E圖係繪示第3A ®之對位治具的立體結構示意圖。 為了清楚繪示起見’圖示中的元件並未按照比例尺加以繪 示。在不同圖示之中，U牛參照號碼可能會有$複，用以標示 相對應或相似的元件。 【主要元件符號說明】 30 ： 基座晶圓 31 ： 元件晶圓 100 ： 晶圓壓合座 101 :第一 凹 室 102 ： 第二凹室 103 .轴心 104 ： 矽晶圓 105 :藍寶 石 基材 106 ： 壓合頭 200 :晶圓 壓 合座 201 : 凹室 202 :對位 治 具 202a :貫穿孔 300 :複合 晶 圓壓 12 M359788 301 :底座 ' 301b :預設區域 _ 302a :上蓋的下表面 302c :上蓋的上表面 304 a :弧形溝槽 304 c :弧形溝槽 305a :凸出部 305c :凸出部 3 0 6 :轴心 308 :傾斜角度 310 :第二斜角 D31 :第一深度 G :高低落差 S2 :第二尺寸 p T1 :矽晶圓的厚度 T32 :第二厚度 301a 302 ： 302b 303 304b 304d 305b 305d 307 ： 309 ： D1 ： D32 SI : S3 : T31 ： :承載面 對位治具（上蓋） :上蓋的開口 :壓合頭 :孤形溝槽 :弧形溝槽 :凸出部 :凸出部 缺刻標記 第一斜角 深度 :第二深度 第一尺寸 第三尺寸 第一厚度 13According to the embodiments described above, the technical feature of the present invention is to provide a pure and easy-to-operate composite wafer pressing device, which is a flat wafer base and is engaged with a flat base. The treatment is to control the susceptor wafer to the pre-set area, and then pass through the opening of the aligning fixture to a portion of the ray that is intended to be bonded to the component wafer, so that a component wafer can be opened. The substrate wafer and the component wafer are bonded to each other by placing the stress on the susceptor wafer smoothly and accurately at a predetermined position on the susceptor. B. Since the embodiment of the present invention applies stress to a wafer wafer having a smaller size, it is bonded to a larger-sized susceptor wafer, and is grounded by using a planar base and an alignment fixture. The alignment of the wafer and the component wafer is used to replace the conventional method of using an alcove to fix or align the pedestal wafer and the component wafer, thereby improving the conventional pedestal wafer and component crystal. The round alignment is not easy and easy to break, and the wafer pressing step does not require additional insertion and removal operations to achieve the goal of reducing process cost. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the scope of the present invention, and any of the related art can be modified and retouched without departing from the spirit and scope of the present invention. Therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS In order to make the above and other objects, features, advantages and embodiments of the present invention more obvious, the detailed description of the drawings is as follows: 11 M359788 - Fig. 1 is drawn according to the prior art A structural cross-sectional view of a wafer press seat for making a composite wafer. The f2 diagram is a structural cross-sectional view of a crystal round press seat for fabricating a composite wafer according to the conventional technique. Figure 3A is a cross-sectional view showing the structure of a composite wafer press apparatus according to the preferred embodiment of the present invention. Fig. 3B is a plan view showing the structure of the base of Fig. 3A. The 3C® is a top view of the structure of the counter fixture of Figure 3A.丨 The 3D drawing is a bottom view of the structure of the fixture without Figure 3A. Figure 3E is a schematic view showing the three-dimensional structure of the third fixture. For the sake of clarity, the elements in the figures are not shown in scale. Among the different illustrations, the U-Niu reference number may have a complex number to indicate corresponding or similar components. [Main component symbol description] 30: pedestal wafer 31: component wafer 100: wafer embossing holder 101: first recess 102: second recess 103. axis 104: 矽 wafer 105: sapphire substrate 106 : Pressing head 200 : Wafer press seat 201 : Alcove 202 : Alignment fixture 202a : Through hole 300 : Composite wafer pressure 12 M359788 301 : Base ' 301b : Preset area _ 302a : Lower surface of the upper cover 302c: upper surface 304a of the upper cover: arcuate groove 304c: arcuate groove 305a: protrusion 305c: protrusion 3 0 6 : axis 308: inclination angle 310: second angle D31: first Depth G: height difference S2: second size p T1 : thickness of the germanium wafer T32: second thickness 301a 302 : 302b 303 304b 304d 305b 305d 307 : 309 : D1 : D32 SI : S3 : T31 : : bearing face Fixture (top cover): Upper cover opening: Pressing head: Orphaned groove: Curved groove: Projection: bulge nick mark First bevel depth: second depth first size third size first Thickness 13