JP4177775B2 - 半導体基板及びその製造方法並びに半導体装置 - Google Patents
半導体基板及びその製造方法並びに半導体装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 212
- 239000004065 semiconductor Substances 0.000 title claims description 191
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 144
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 41
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 296
- 229910004298 SiO 2 Inorganic materials 0.000 description 57
- 238000005530 etching Methods 0.000 description 30
- 238000012986 modification Methods 0.000 description 15
- 230000004048 modification Effects 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 14
- 238000001039 wet etching Methods 0.000 description 14
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 238000001069 Raman spectroscopy Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000007858 starting material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000007790 solid phase Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
Description
第1の実施形態は、図1に示したように、支持基板であるSi基板1上に絶縁層であるBOX層11を介して緩和SiGe層12を形成した基板4(以降、SGOI(Silicon Germanium On Insulator)基板と呼ぶ)を出発材料として使用する。本実施形態による半導体基板は、Siのエピタキシャル成長によって緩和SiGe層12上に形成した歪みSi層21を含む歪みSi領域A1と、選択エピタキシャルSi層15上に歪みSi層21とほぼ同じ高さに形成した歪みのない緩和Si層22を含む緩和Si領域B1とを有する半導体基板である。この半導体基板の特徴は、歪みSi層21の膜厚制御が容易であり、高品質な点である。
第2の実施形態は、第1の実施形態を基にした、CMOS(Complementary Metal-Oxide Semiconductor)装置の製造に好ましい構造を有する半導体基板である。本実施形態は、図4に示したように、第1の実施形態と同様に、Si基板1上にBOX層11を介して緩和SiGe層12を形成したSGOI基板4を出発材料として使用している。本実施形態による半導体基板は、BOX層11上に設けた緩和SiGe層12上にSiのエピタキシャル成長によって形成した歪みSi層21を含む歪みSi領域A1と、選択エピタキシャルSi層15上に設けた歪みSiGe層13上に歪みSi層21とほぼ同じ高さに形成した歪みのない緩和Si層22を含む緩和Si領域B2とを有する半導体基板である。この半導体基板の特徴は、歪みSi層21及び緩和Si層22の膜厚制御が容易であり、高品質な点である。
第3の実施形態は、図7に示したように、SGOI基板4に代えて、空洞上に緩和SiGe層を形成した基板(以降、SGON(Silicon-Germanium On Nothing)と呼ぶ)を使用する例である。本実施形態では、Si基板1を出発材料として使用して、SGON構造を形成する。本実施形態による半導体基板は、図7に示したように、空洞33を設けた緩和SiGe層12上にSiのエピタキシャル成長によって形成した歪みSi層21を含む歪みSi領域A2と、Si基板1上に歪みSi層21とほぼ同じ高さに形成した歪みのない緩和Si層22を含む緩和Si領域B3とを有する。この半導体基板の特徴は、歪みSi層21の膜厚制御が容易であり、高品質なことであると同時に、第1及び第2の実施形態と比較して、製造工程及び製造コストを削減できる点である。
第4の実施形態は、第2の実施形態と同様にCMOS半導体装置に適した基板である。本実施形態による半導体基板は、図10に示したように、Si基板1上に形成した緩和SiGe層12−1,12−2上にエピタキシャル成長によって形成した歪みSi層21を含む歪みSi領域A3と、基板Si1上に形成したSi層15上に歪みSiGe層13を介してエピタキシャル成長した歪みのない緩和Si層22を含む緩和Si領域B2とを有する。したがって、ほぼ同じ高さの歪みSi領域A3と緩和Si領域B2とを有する半導体基板である。この半導体基板の特徴は、歪みSi層21及び緩和Si層22の膜厚制御が容易であり、高品質なことである。
第5の実施形態では、Si基板1上に、例えば、厚さ2μmの緩和SiGe層12を介して歪みSi層14を形成した、バルク歪みSi基板2を出発材料として使用する。本実施形態による半導体基板は、緩和SiGe層12を除去した後、図13に示したように、Siのエピタキシャル成長を全面に行うことによって、緩和SiGe層12上に歪みSi層21を含む歪みSi領域A3と、選択エピタキシャルSi層15上に歪みのない緩和Si層22を含む緩和Si領域B1とを有する。したがって、ほぼ同じ高さの歪みSi領域A3と緩和Si領域B1とを有する半導体基板である。この半導体基板の特徴は、歪みSi層21の膜厚制御が容易であり、高品質な歪みSi領域A3と緩和Si領域B1とを形成できる点である。
本変形例は、第5の実施形態の製造プロセスを短縮し、かつ高集積化に適するように変形したものである。本変形例では、出発材料としてSi基板1上に、例えば、厚さ2μmの緩和SiGe層12を形成した緩和SiGe基板5を使用する。これによって、歪みSi層を除去する工程を省略することができると同時に、この除去工程における熱酸化によって緩和SiGe層12表面が酸化されてGeが緩和SiGe層12表面に濃縮されるのを防ぐことができる。さらに、歪みSiを形成する領域A3の緩和SiGe層12を異方性エッチングによって除去するため、横方向のエッチングによりマスクSiN膜18及びSiO2膜16下がアンダーカットされることを防止でき、高集積化に適している。
本変形例は、第5の実施形態の製造プロセスを短縮し、かつ高集積化に適するように変形すると同時に、緩和Si領域B1を形成する際に、Si基板1をRIEでエッチングすることによるダメージが与えられる可能性を回避したものである。本変形例では、第1の変形例と同様に出発材料としてSi基板1上に、例えば、厚さ2μmの緩和SiGe層12を形成した緩和SiGe基板5を使用する。これによって、第5の実施形態の第1の変形例と同様にプロセスを簡略化できる。さらに、歪みSiを形成する領域A3の緩和SiGe層12を異方性エッチングによって除去し、Si基板1をウェットエッチングによって除去するため、横方向のエッチングによりマスクSiN膜18及びSiO2膜16下のアンダーカットを抑制できると同時に、Si基板1のRIEによるダメージを抑制できる。
11…埋め込み酸化膜層(BOX層)、
12…緩和SiGe層、
13…歪みSiGe層、
15…エピタキシャルSi層、
16…第1のSiO2膜、
17…第2のSiO2膜、
18…第1のSiN膜、
19…第2のSiN膜、
21…歪みSi層、
22…緩和Si層、
33…空洞、
A,A1,A2,A3…歪みSi領域、
B,B1,B2,B3…緩和Si領域。
Claims (7)
- 支持基板と、
前記支持基板上に形成された第3のシリコン層と、前記第3のシリコン層の上方に形成された第1のシリコン層とを含む第1の半導体領域と、
前記支持基板上に第1の絶縁膜、第1のシリコン・ゲルマニウム層を介して形成され、その表面が前記第1のシリコン層表面と同じ高さに形成された歪みを有する第2のシリコン層を含む第2の半導体領域と、
前記第1の半導体領域と第2の半導体領域との境界面に設けられた第2の絶縁膜とを具備することを特徴とする半導体基板。 - 前記第1の半導体領域は、前記第3のシリコン層上に第2のシリコン・ゲルマニウム層を介して形成された第1のシリコン層を含むことを特徴とする請求項1に記載の半導体基板。
- 前記第1の絶縁膜と前記第2の絶縁膜は、接触することを特徴とする請求項1若しくは2に記載の半導体基板。
- 前記第1のシリコン層は、歪みのないシリコン層であることを特徴とする請求項1ないし3のいずれか1に記載の半導体基板。
- 支持基板と、
前記支持基板の上方に第1のシリコン層を介して形成された第2のシリコン層を含む第1の半導体領域と、
前記支持基板の上方に絶縁層及びシリコン・ゲルマニウム層を介してその表面が前記第2のシリコン層表面と同じ高さに形成された歪みを有する第3のシリコン層を含む第2の半導体領域と、
前記第1の半導体領域と第2の半導体領域との間に形成された素子分離絶縁膜の下の前記第1の半導体領域と第2の半導体領域との境界面に形成された絶縁膜と、
前記第1の半導体領域に形成されたトレンチ型メモリセルと、
前記第2の半導体領域に形成された電界効果型トランジスタとを具備することを特徴とする半導体装置。 - 支持基板と、
前記支持基板の上方に第1のシリコン層及び第1のシリコン・ゲルマニウム層を介して形成された第2のシリコン層を含む第1の半導体領域と、
前記支持基板の上方に絶縁層及び第2のシリコン・ゲルマニウム層を介して形成された歪みを有する第3のシリコン層を含み、この第3のシリコン層表面が前記第2のシリコン層表面と同じ高さに形成された第2の半導体領域と、
前記第1の半導体領域と第2の半導体領域との間に形成された素子分離絶縁膜の下の前記第1の半導体領域と第2の半導体領域との境界面に形成された絶縁膜と、
前記第1の半導体領域に形成されたpチャネル電界効果型トランジスタと、
前記第2の半導体領域に形成されたnチャネル電界効果型トランジスタとを具備することを特徴とする半導体装置。 - 第1の絶縁膜を介して形成されたシリコン・ゲルマニウム層を含む半導体基板上に第2の絶縁膜を形成し、
前記第2の絶縁膜をパターニングし、
前記半導体基板の一部の領域の前記シリコン・ゲルマニウム層と前記第1の絶縁膜の一部を除去して凹部を形成し、
全面に第3の絶縁膜を堆積し、
前記凹部の底面の前記第3の絶縁膜と前記第1の絶縁膜を除去し、
前記凹部にシリコン層を形成し、
前記シリコン・ゲルマニウム層表面の前記第2及び第3の絶縁膜を除去し、
前記シリコン・ゲルマニウム層上に歪を有する第1のシリコン層を、及び前記シリコン層上に前記第1のシリコン層表面とその表面が同じ高さに第2のシリコン層を同時に形成することを特徴とする半導体基板の製造方法。
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EP04011379A EP1577943A3 (en) | 2004-03-16 | 2004-05-13 | Semiconductor substrate, manufacturing method therefor, and semiconductor device |
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Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6891209B2 (en) * | 2001-08-13 | 2005-05-10 | Amberwave Systems Corporation | Dynamic random access memory trench capacitors |
JP4177775B2 (ja) * | 2004-03-16 | 2008-11-05 | 株式会社東芝 | 半導体基板及びその製造方法並びに半導体装置 |
US7172930B2 (en) * | 2004-07-02 | 2007-02-06 | International Business Machines Corporation | Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer |
US7384829B2 (en) | 2004-07-23 | 2008-06-10 | International Business Machines Corporation | Patterned strained semiconductor substrate and device |
US7348635B2 (en) * | 2004-12-10 | 2008-03-25 | International Business Machines Corporation | Device having enhanced stress state and related methods |
US7037856B1 (en) * | 2005-06-10 | 2006-05-02 | Sharp Laboratories Of America, Inc. | Method of fabricating a low-defect strained epitaxial germanium film on silicon |
JP2007103842A (ja) * | 2005-10-07 | 2007-04-19 | Toshiba Corp | 半導体装置 |
JP2007329200A (ja) * | 2006-06-06 | 2007-12-20 | Toshiba Corp | 半導体装置の製造方法 |
JP5160080B2 (ja) * | 2006-06-23 | 2013-03-13 | アイメック | 歪マルチゲートトランジスタの製造方法およびそこから得られるデバイス |
US7718496B2 (en) | 2007-10-30 | 2010-05-18 | International Business Machines Corporation | Techniques for enabling multiple Vt devices using high-K metal gate stacks |
US20100102393A1 (en) * | 2008-10-29 | 2010-04-29 | Chartered Semiconductor Manufacturing, Ltd. | Metal gate transistors |
DE102009014507B4 (de) * | 2009-03-24 | 2017-08-31 | Texas Instruments Deutschland Gmbh | Verfahren zur Bildung eines elektrischen Kontakts zwischen einem Trägerwafer und der Oberfläche einer oberen Siliziumschicht eines Silizium-auf-Isolator-Wafers und elektrische Vorrichtung mit einem solchen elektrischen Kontakt |
CN102054735A (zh) * | 2009-10-28 | 2011-05-11 | 上海华虹Nec电子有限公司 | 填充高深宽比沟槽隔离区的方法 |
CN102446853A (zh) * | 2010-09-30 | 2012-05-09 | 中国科学院微电子研究所 | 应变半导体沟道形成方法和半导体器件 |
US8680576B2 (en) * | 2012-05-16 | 2014-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS device and method of forming the same |
KR102210325B1 (ko) * | 2013-09-06 | 2021-02-01 | 삼성전자주식회사 | Cmos 소자 및 그 제조 방법 |
US9209065B1 (en) | 2014-09-11 | 2015-12-08 | International Business Machines Corporation | Engineered substrate and device for co-integration of strained silicon and relaxed silicon |
US9472575B2 (en) | 2015-02-06 | 2016-10-18 | International Business Machines Corporation | Formation of strained fins in a finFET device |
US9496185B2 (en) | 2015-03-27 | 2016-11-15 | International Business Machines Corporation | Dual channel finFET with relaxed pFET region |
US9972622B2 (en) | 2015-05-13 | 2018-05-15 | Imec Vzw | Method for manufacturing a CMOS device and associated device |
CN109637974A (zh) * | 2018-12-19 | 2019-04-16 | 上海华力集成电路制造有限公司 | 一种fdsoi形成方法 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5155571A (en) * | 1990-08-06 | 1992-10-13 | The Regents Of The University Of California | Complementary field effect transistors having strained superlattice structure |
JP3372158B2 (ja) | 1996-02-09 | 2003-01-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6399970B2 (en) * | 1996-09-17 | 2002-06-04 | Matsushita Electric Industrial Co., Ltd. | FET having a Si/SiGeC heterojunction channel |
US5847419A (en) * | 1996-09-17 | 1998-12-08 | Kabushiki Kaisha Toshiba | Si-SiGe semiconductor device and method of fabricating the same |
EP0838858B1 (de) * | 1996-09-27 | 2002-05-15 | Infineon Technologies AG | Integrierte CMOS-Schaltungsanordnung und Verfahren zu deren Herstellung |
JP4258034B2 (ja) * | 1998-05-27 | 2009-04-30 | ソニー株式会社 | 半導体装置及び半導体装置の製造方法 |
DE10025264A1 (de) * | 2000-05-22 | 2001-11-29 | Max Planck Gesellschaft | Feldeffekt-Transistor auf der Basis von eingebetteten Clusterstrukturen und Verfahren zu seiner Herstellung |
JP3998408B2 (ja) * | 2000-09-29 | 2007-10-24 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP3678661B2 (ja) * | 2001-03-08 | 2005-08-03 | シャープ株式会社 | 半導体装置 |
US20020167048A1 (en) * | 2001-05-14 | 2002-11-14 | Tweet Douglas J. | Enhanced mobility NMOS and PMOS transistors using strained Si/SiGe layers on silicon-on-insulator substrates |
US6891209B2 (en) * | 2001-08-13 | 2005-05-10 | Amberwave Systems Corporation | Dynamic random access memory trench capacitors |
JP3984014B2 (ja) * | 2001-09-26 | 2007-09-26 | 株式会社東芝 | 半導体装置用基板を製造する方法および半導体装置用基板 |
JP4322453B2 (ja) | 2001-09-27 | 2009-09-02 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP3943932B2 (ja) * | 2001-12-27 | 2007-07-11 | 株式会社東芝 | 半導体装置の製造方法 |
US6569729B1 (en) * | 2002-07-19 | 2003-05-27 | Taiwan Semiconductor Manufacturing Company | Method of fabricating three dimensional CMOSFET devices for an embedded DRAM application |
US6635909B2 (en) * | 2002-03-19 | 2003-10-21 | International Business Machines Corporation | Strained fin FETs structure and method |
DE10218381A1 (de) * | 2002-04-24 | 2004-02-26 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung einer oder mehrerer einkristalliner Schichten mit jeweils unterschiedlicher Gitterstruktur in einer Ebene einer Schichtenfolge |
JP3506694B1 (ja) * | 2002-09-02 | 2004-03-15 | 沖電気工業株式会社 | Mosfetデバイス及びその製造方法 |
JP2004165197A (ja) | 2002-11-08 | 2004-06-10 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
AU2003202254A1 (en) * | 2003-01-08 | 2004-08-10 | International Business Machines Corporation | High performance embedded dram technology with strained silicon |
US6963078B2 (en) * | 2003-03-15 | 2005-11-08 | International Business Machines Corporation | Dual strain-state SiGe layers for microelectronics |
US6943407B2 (en) * | 2003-06-17 | 2005-09-13 | International Business Machines Corporation | Low leakage heterojunction vertical transistors and high performance devices thereof |
US6927414B2 (en) * | 2003-06-17 | 2005-08-09 | International Business Machines Corporation | High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof |
JP2005072084A (ja) * | 2003-08-28 | 2005-03-17 | Toshiba Corp | 半導体装置及びその製造方法 |
US7034362B2 (en) * | 2003-10-17 | 2006-04-25 | International Business Machines Corporation | Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures |
US7247534B2 (en) | 2003-11-19 | 2007-07-24 | International Business Machines Corporation | Silicon device on Si:C-OI and SGOI and method of manufacture |
US7183593B2 (en) * | 2003-12-05 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heterostructure resistor and method of forming the same |
DE10360774A1 (de) | 2003-12-23 | 2005-07-28 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Brennstoffeinspritzventils und Brennstoffeinspritzventil |
US7923782B2 (en) * | 2004-02-27 | 2011-04-12 | International Business Machines Corporation | Hybrid SOI/bulk semiconductor transistors |
JP2005244020A (ja) * | 2004-02-27 | 2005-09-08 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4177775B2 (ja) * | 2004-03-16 | 2008-11-05 | 株式会社東芝 | 半導体基板及びその製造方法並びに半導体装置 |
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