TWI336345B - - Google Patents

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Publication number
TWI336345B
TWI336345B TW92109718A TW92109718A TWI336345B TW I336345 B TWI336345 B TW I336345B TW 92109718 A TW92109718 A TW 92109718A TW 92109718 A TW92109718 A TW 92109718A TW I336345 B TWI336345 B TW I336345B
Authority
TW
Taiwan
Prior art keywords
light
component
group
reaction
compound
Prior art date
Application number
TW92109718A
Other languages
English (en)
Chinese (zh)
Other versions
TW200307726A (en
Inventor
Tsumura Manabu
Ide Masahito
Ouchi Katsuya
Kuramoto Masafumi
Miki Tomohide
Nii Ikuya
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaneka Corp filed Critical Kaneka Corp
Publication of TW200307726A publication Critical patent/TW200307726A/zh
Application granted granted Critical
Publication of TWI336345B publication Critical patent/TWI336345B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/42—Introducing metal atoms or metal-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/54—Nitrogen-containing linkages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/10—Block- or graft-copolymers containing polysiloxane sequences
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Led Device Packages (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Sealing Material Composition (AREA)
TW92109718A 2002-04-26 2003-04-25 Hardenable composition, hardening product, process for producing the same and light emitting diode sealed with the hardening product TW200307726A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002125947 2002-04-26
JP2002133412 2002-05-09
JP2002135022 2002-05-10
JP2002225189 2002-08-01
JP2003026649 2003-02-04

Publications (2)

Publication Number Publication Date
TW200307726A TW200307726A (en) 2003-12-16
TWI336345B true TWI336345B (cg-RX-API-DMAC7.html) 2011-01-21

Family

ID=29273849

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92109718A TW200307726A (en) 2002-04-26 2003-04-25 Hardenable composition, hardening product, process for producing the same and light emitting diode sealed with the hardening product

Country Status (9)

Country Link
US (1) US7371462B2 (cg-RX-API-DMAC7.html)
EP (1) EP1505121B1 (cg-RX-API-DMAC7.html)
KR (1) KR100969175B1 (cg-RX-API-DMAC7.html)
CN (1) CN100338141C (cg-RX-API-DMAC7.html)
AT (1) ATE383404T1 (cg-RX-API-DMAC7.html)
CA (1) CA2483510A1 (cg-RX-API-DMAC7.html)
DE (1) DE60318570T2 (cg-RX-API-DMAC7.html)
TW (1) TW200307726A (cg-RX-API-DMAC7.html)
WO (1) WO2003091338A1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102683330A (zh) * 2011-03-11 2012-09-19 株式会社东芝 半导体装置以及半导体装置的制造方法

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CN101125925B (zh) * 2000-12-27 2013-06-12 株式会社钟化 固化剂、可固化组合物、光学材料用组合物、光学材料及其应用
MY151065A (en) * 2003-02-25 2014-03-31 Kaneka Corp Curing composition and method for preparing same, light-shielding paste, light-shielding resin and method for producing same, package for light-emitting diode, and semiconductor device
JP4009581B2 (ja) * 2003-11-18 2007-11-14 オリンパス株式会社 カプセル型医療システム
DE102005009066A1 (de) 2005-02-28 2006-09-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optischen und eines strahlungsemittierenden Bauelementes und optisches sowie strahlungsemittierendes Bauelement
DE102005036520A1 (de) * 2005-04-26 2006-11-09 Osram Opto Semiconductors Gmbh Optisches Bauteil, optoelektronisches Bauelement mit dem Bauteil und dessen Herstellung
JP2007091960A (ja) * 2005-09-30 2007-04-12 Nitto Denko Corp 光半導体素子封止用樹脂組成物およびそれを用いて得られる光半導体装置
US8465175B2 (en) 2005-11-29 2013-06-18 GE Lighting Solutions, LLC LED lighting assemblies with thermal overmolding
EP1967540B1 (en) * 2005-12-26 2013-04-03 Kaneka Corporation Curable composition
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US20070269586A1 (en) * 2006-05-17 2007-11-22 3M Innovative Properties Company Method of making light emitting device with silicon-containing composition
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JP5958107B2 (ja) 2012-06-15 2016-07-27 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置
CN102942895B (zh) * 2012-11-15 2016-03-02 烟台德邦科技有限公司 一种导热电子灌封胶及其制备方法
WO2015046028A1 (ja) * 2013-09-27 2015-04-02 Rimtec株式会社 ノルボルネン系架橋重合体およびその製造方法
JP6384046B2 (ja) * 2013-12-06 2018-09-05 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置
KR102211608B1 (ko) * 2014-01-17 2021-02-02 헨켈 아게 운트 코. 카게아아 광학 반도체 소자용 경화성 조성물
CN111527131B (zh) * 2017-12-30 2022-09-27 美国圣戈班性能塑料公司 杂链聚合物组合物
CN109810669B (zh) * 2018-12-28 2021-07-16 广州市高士实业有限公司 一种聚硅树脂及其制备方法和应用
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102683330A (zh) * 2011-03-11 2012-09-19 株式会社东芝 半导体装置以及半导体装置的制造方法
TWI484601B (zh) * 2011-03-11 2015-05-11 東芝股份有限公司 Semiconductor device and method for manufacturing semiconductor device
CN102683330B (zh) * 2011-03-11 2015-06-10 株式会社东芝 半导体装置以及半导体装置的制造方法

Also Published As

Publication number Publication date
CN1649964A (zh) 2005-08-03
CA2483510A1 (en) 2003-11-06
DE60318570T2 (de) 2009-01-08
KR20050007343A (ko) 2005-01-17
EP1505121A1 (en) 2005-02-09
ATE383404T1 (de) 2008-01-15
WO2003091338A1 (fr) 2003-11-06
US20050209400A1 (en) 2005-09-22
EP1505121A4 (en) 2006-04-12
EP1505121B1 (en) 2008-01-09
US7371462B2 (en) 2008-05-13
KR100969175B1 (ko) 2010-07-14
TW200307726A (en) 2003-12-16
CN100338141C (zh) 2007-09-19
DE60318570D1 (de) 2008-02-21

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