TWI324266B - Active matrix substrate and its manufacturing method - Google Patents
Active matrix substrate and its manufacturing method Download PDFInfo
- Publication number
- TWI324266B TWI324266B TW094139439A TW94139439A TWI324266B TW I324266 B TWI324266 B TW I324266B TW 094139439 A TW094139439 A TW 094139439A TW 94139439 A TW94139439 A TW 94139439A TW I324266 B TWI324266 B TW I324266B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- insulating film
- interlayer insulating
- forming
- film
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 91
- 239000011159 matrix material Substances 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000003990 capacitor Substances 0.000 claims description 97
- 239000011229 interlayer Substances 0.000 claims description 97
- 239000004065 semiconductor Substances 0.000 claims description 54
- 239000010410 layer Substances 0.000 claims description 46
- 229910052736 halogen Inorganic materials 0.000 claims description 22
- 150000002367 halogens Chemical class 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000011149 active material Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 claims 1
- 239000010408 film Substances 0.000 description 232
- 238000003384 imaging method Methods 0.000 description 21
- 238000001459 lithography Methods 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 239000007789 gas Substances 0.000 description 17
- 229910045601 alloy Inorganic materials 0.000 description 16
- 239000000956 alloy Substances 0.000 description 16
- 239000004973 liquid crystal related substance Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000010409 thin film Substances 0.000 description 14
- 239000011651 chromium Substances 0.000 description 12
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 229910004205 SiNX Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910001182 Mo alloy Inorganic materials 0.000 description 6
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- LGZVIFDFEQVAKL-UHFFFAOYSA-N azane cerium(3+) trinitrate Chemical compound N.[Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O LGZVIFDFEQVAKL-UHFFFAOYSA-N 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000009428 plumbing Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B62—LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
- B62D—MOTOR VEHICLES; TRAILERS
- B62D41/00—Fittings for identifying vehicles in case of collision; Fittings for marking or recording collision areas
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
- B05B5/03—Discharge apparatus, e.g. electrostatic spray guns characterised by the use of gas, e.g. electrostatically assisted pneumatic spraying
- B05B5/032—Discharge apparatus, e.g. electrostatic spray guns characterised by the use of gas, e.g. electrostatically assisted pneumatic spraying for spraying particulate materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
- B60Y2400/00—Special features of vehicle units
- B60Y2400/30—Sensors
- B60Y2400/304—Acceleration sensors
- B60Y2400/3042—Collision sensors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Combustion & Propulsion (AREA)
- Transportation (AREA)
- Mechanical Engineering (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005022540A JP4083752B2 (ja) | 2005-01-31 | 2005-01-31 | アクティブマトリクス基板及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200632428A TW200632428A (en) | 2006-09-16 |
| TWI324266B true TWI324266B (en) | 2010-05-01 |
Family
ID=36755573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094139439A TWI324266B (en) | 2005-01-31 | 2005-11-10 | Active matrix substrate and its manufacturing method |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7554119B2 (enExample) |
| JP (1) | JP4083752B2 (enExample) |
| KR (1) | KR100759282B1 (enExample) |
| CN (1) | CN100514657C (enExample) |
| TW (1) | TWI324266B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4083752B2 (ja) * | 2005-01-31 | 2008-04-30 | 三菱電機株式会社 | アクティブマトリクス基板及びその製造方法 |
| KR101226444B1 (ko) * | 2005-12-21 | 2013-01-28 | 삼성디스플레이 주식회사 | 표시 기판의 제조 방법 및 표시 기판 |
| JP4923847B2 (ja) * | 2006-08-21 | 2012-04-25 | ソニー株式会社 | 液晶表示パネル |
| KR20080019398A (ko) | 2006-08-28 | 2008-03-04 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| KR100922803B1 (ko) * | 2006-11-29 | 2009-10-21 | 엘지디스플레이 주식회사 | 액정표시장치 |
| JP5102535B2 (ja) | 2007-05-11 | 2012-12-19 | 三菱電機株式会社 | 表示装置と表示装置の製造方法 |
| WO2009001585A1 (ja) | 2007-06-27 | 2008-12-31 | Sharp Kabushiki Kaisha | 液晶表示装置 |
| TWI360010B (en) * | 2007-09-20 | 2012-03-11 | Chimei Innolux Corp | Pixel array substrate and liquid crystal display |
| KR101456946B1 (ko) | 2008-01-10 | 2014-10-31 | 삼성디스플레이 주식회사 | 표시 기판 및 이의 제조 방법 |
| TWI370311B (en) * | 2008-09-05 | 2012-08-11 | Au Optronics Corp | Pixel structure of a display panel |
| KR101247050B1 (ko) | 2008-12-09 | 2013-03-25 | 샤프 가부시키가이샤 | 액티브 매트릭스 기판, 액정 패널, 액정 표시 유닛, 액정 표시 장치, 텔레비전 수상기 |
| TWI404181B (zh) * | 2009-04-23 | 2013-08-01 | Innolux Corp | 畫素陣列基板及液晶顯示裝置 |
| CN102023422B (zh) * | 2009-09-15 | 2013-07-10 | 北京京东方光电科技有限公司 | Tft-lcd组合基板、液晶显示器及其制造方法 |
| KR101797095B1 (ko) * | 2010-09-29 | 2017-12-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR101820032B1 (ko) | 2010-09-30 | 2018-01-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 액정 표시 장치 및 이들의 리페어 방법 |
| JP5830810B2 (ja) * | 2011-05-26 | 2015-12-09 | 株式会社Ｊｏｌｅｄ | 表示パネルおよびその製造方法 |
| CN102934154B (zh) * | 2011-05-26 | 2016-04-13 | 株式会社日本有机雷特显示器 | 显示面板及其制造方法 |
| JP5520897B2 (ja) | 2011-08-11 | 2014-06-11 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
| JP5740278B2 (ja) | 2011-10-11 | 2015-06-24 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
| WO2014002448A1 (ja) * | 2012-06-28 | 2014-01-03 | シャープ株式会社 | 表示装置用基板及びそれを備えた表示装置 |
| KR101971202B1 (ko) * | 2012-11-22 | 2019-04-23 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
| KR102102155B1 (ko) * | 2013-12-23 | 2020-05-29 | 엘지디스플레이 주식회사 | 액정표시장치 |
| KR20170110212A (ko) * | 2016-03-22 | 2017-10-11 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조방법 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5270845A (en) * | 1987-02-19 | 1993-12-14 | Mitsubishi Denki K.K. | Liquid crystal display unit manufacturing method including forming one of two gate line layers of display electrode material |
| JPH01191829A (ja) * | 1988-01-27 | 1989-08-01 | Mitsubishi Electric Corp | 液晶表示装置 |
| JPH0728076A (ja) * | 1993-07-12 | 1995-01-31 | Fujitsu Ltd | 液晶表示装置 |
| JP3286930B2 (ja) * | 1995-07-03 | 2002-05-27 | 富士通株式会社 | 薄膜トランジスタマトリクス基板 |
| JP3317387B2 (ja) | 1996-06-03 | 2002-08-26 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
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-
2005
- 2005-01-31 JP JP2005022540A patent/JP4083752B2/ja not_active Expired - Lifetime
- 2005-11-10 TW TW094139439A patent/TWI324266B/zh active
- 2005-11-16 US US11/274,281 patent/US7554119B2/en active Active
-
2006
- 2006-01-05 KR KR1020060001248A patent/KR100759282B1/ko active Active
- 2006-01-06 CN CNB2006100057753A patent/CN100514657C/zh active Active
-
2009
- 2009-05-22 US US12/470,978 patent/US7923729B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20090230399A1 (en) | 2009-09-17 |
| KR100759282B1 (ko) | 2007-09-17 |
| JP2006208881A (ja) | 2006-08-10 |
| KR20060088017A (ko) | 2006-08-03 |
| US7923729B2 (en) | 2011-04-12 |
| JP4083752B2 (ja) | 2008-04-30 |
| CN100514657C (zh) | 2009-07-15 |
| US7554119B2 (en) | 2009-06-30 |
| CN1819217A (zh) | 2006-08-16 |
| TW200632428A (en) | 2006-09-16 |
| US20060169983A1 (en) | 2006-08-03 |
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