CN100514657C - 有源矩阵衬底及其制造方法 - Google Patents

有源矩阵衬底及其制造方法 Download PDF

Info

Publication number
CN100514657C
CN100514657C CNB2006100057753A CN200610005775A CN100514657C CN 100514657 C CN100514657 C CN 100514657C CN B2006100057753 A CNB2006100057753 A CN B2006100057753A CN 200610005775 A CN200610005775 A CN 200610005775A CN 100514657 C CN100514657 C CN 100514657C
Authority
CN
China
Prior art keywords
mentioned
electrode
film
drain electrode
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2006100057753A
Other languages
English (en)
Chinese (zh)
Other versions
CN1819217A (zh
Inventor
泽水京子
大谷诚
松井泰志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1819217A publication Critical patent/CN1819217A/zh
Application granted granted Critical
Publication of CN100514657C publication Critical patent/CN100514657C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B62—LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
    • B62D—MOTOR VEHICLES; TRAILERS
    • B62D41/00—Fittings for identifying vehicles in case of collision; Fittings for marking or recording collision areas
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
    • B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
    • B05B5/03—Discharge apparatus, e.g. electrostatic spray guns characterised by the use of gas, e.g. electrostatically assisted pneumatic spraying
    • B05B5/032—Discharge apparatus, e.g. electrostatic spray guns characterised by the use of gas, e.g. electrostatically assisted pneumatic spraying for spraying particulate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
    • B60Y2400/00—Special features of vehicle units
    • B60Y2400/30—Sensors
    • B60Y2400/304—Acceleration sensors
    • B60Y2400/3042—Collision sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Combustion & Propulsion (AREA)
  • Transportation (AREA)
  • Mechanical Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CNB2006100057753A 2005-01-31 2006-01-06 有源矩阵衬底及其制造方法 Expired - Lifetime CN100514657C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005022540 2005-01-31
JP2005022540A JP4083752B2 (ja) 2005-01-31 2005-01-31 アクティブマトリクス基板及びその製造方法

Publications (2)

Publication Number Publication Date
CN1819217A CN1819217A (zh) 2006-08-16
CN100514657C true CN100514657C (zh) 2009-07-15

Family

ID=36755573

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100057753A Expired - Lifetime CN100514657C (zh) 2005-01-31 2006-01-06 有源矩阵衬底及其制造方法

Country Status (5)

Country Link
US (2) US7554119B2 (enExample)
JP (1) JP4083752B2 (enExample)
KR (1) KR100759282B1 (enExample)
CN (1) CN100514657C (enExample)
TW (1) TWI324266B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102934154A (zh) * 2011-05-26 2013-02-13 松下电器产业株式会社 显示面板及其制造方法

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4083752B2 (ja) * 2005-01-31 2008-04-30 三菱電機株式会社 アクティブマトリクス基板及びその製造方法
KR101226444B1 (ko) * 2005-12-21 2013-01-28 삼성디스플레이 주식회사 표시 기판의 제조 방법 및 표시 기판
JP4923847B2 (ja) * 2006-08-21 2012-04-25 ソニー株式会社 液晶表示パネル
KR20080019398A (ko) * 2006-08-28 2008-03-04 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR100922803B1 (ko) * 2006-11-29 2009-10-21 엘지디스플레이 주식회사 액정표시장치
JP5102535B2 (ja) 2007-05-11 2012-12-19 三菱電機株式会社 表示装置と表示装置の製造方法
CN101689000B (zh) 2007-06-27 2012-07-18 夏普株式会社 液晶显示装置
TWI360010B (en) * 2007-09-20 2012-03-11 Chimei Innolux Corp Pixel array substrate and liquid crystal display
KR101456946B1 (ko) 2008-01-10 2014-10-31 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
TWI370311B (en) * 2008-09-05 2012-08-11 Au Optronics Corp Pixel structure of a display panel
WO2010067648A1 (ja) 2008-12-09 2010-06-17 シャープ株式会社 アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機
TWI404181B (zh) * 2009-04-23 2013-08-01 Innolux Corp 畫素陣列基板及液晶顯示裝置
CN102023422B (zh) * 2009-09-15 2013-07-10 北京京东方光电科技有限公司 Tft-lcd组合基板、液晶显示器及其制造方法
KR101797095B1 (ko) * 2010-09-29 2017-12-13 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101820032B1 (ko) 2010-09-30 2018-01-19 삼성디스플레이 주식회사 박막 트랜지스터 기판, 액정 표시 장치 및 이들의 리페어 방법
JP5830810B2 (ja) * 2011-05-26 2015-12-09 株式会社Ｊｏｌｅｄ 表示パネルおよびその製造方法
JP5520897B2 (ja) * 2011-08-11 2014-06-11 株式会社ジャパンディスプレイ 液晶表示装置
JP5740278B2 (ja) 2011-10-11 2015-06-24 株式会社ジャパンディスプレイ 液晶表示装置
WO2014002448A1 (ja) * 2012-06-28 2014-01-03 シャープ株式会社 表示装置用基板及びそれを備えた表示装置
KR101971202B1 (ko) * 2012-11-22 2019-04-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
KR102102155B1 (ko) * 2013-12-23 2020-05-29 엘지디스플레이 주식회사 액정표시장치
KR20170110212A (ko) * 2016-03-22 2017-10-11 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조방법

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270845A (en) * 1987-02-19 1993-12-14 Mitsubishi Denki K.K. Liquid crystal display unit manufacturing method including forming one of two gate line layers of display electrode material
JPH01191829A (ja) * 1988-01-27 1989-08-01 Mitsubishi Electric Corp 液晶表示装置
JPH0728076A (ja) * 1993-07-12 1995-01-31 Fujitsu Ltd 液晶表示装置
JP3286930B2 (ja) * 1995-07-03 2002-05-27 富士通株式会社 薄膜トランジスタマトリクス基板
JP3317387B2 (ja) 1996-06-03 2002-08-26 シャープ株式会社 アクティブマトリクス基板およびその製造方法
JP3871764B2 (ja) * 1997-03-26 2007-01-24 株式会社半導体エネルギー研究所 反射型の表示装置
US5971571A (en) * 1997-09-08 1999-10-26 Winona Lighting Studio, Inc. Concave light reflector device
JP3076030B2 (ja) * 1998-07-14 2000-08-14 東芝電子エンジニアリング株式会社 アクティブマトリクス型液晶表示装置
JP2000098420A (ja) 1998-09-22 2000-04-07 Toshiba Corp アクティブマトリクス型液晶表示装置
JP2000221488A (ja) 1999-01-29 2000-08-11 Sharp Corp 液晶表示装置
JP2000221448A (ja) 1999-02-04 2000-08-11 Tokin Corp 光アイソレータ
KR100312327B1 (ko) * 1999-07-31 2001-11-03 구본준, 론 위라하디락사 반사투과형 액정 표시장치
JP4427842B2 (ja) * 1999-09-24 2010-03-10 ソニー株式会社 半導体装置及び表示装置
JP2001142095A (ja) 1999-11-15 2001-05-25 Sharp Corp 液晶表示装置及びその製造方法
US6583829B2 (en) * 2000-03-06 2003-06-24 Hitachi, Ltd. Liquid crystal display having an opening in each pixel electrode corresponding to each storage line
JP3645184B2 (ja) 2000-05-31 2005-05-11 シャープ株式会社 液晶表示装置及びその欠陥修正方法
JP2002055230A (ja) 2000-08-10 2002-02-20 Fuji Photo Film Co Ltd 光学補償シート、楕円偏光板、および液晶表示装置
JP2002055360A (ja) 2000-08-11 2002-02-20 Nec Corp 液晶表示装置及びその製造方法
JP2002094072A (ja) * 2000-09-18 2002-03-29 Seiko Epson Corp 電気光学装置用素子基板及びその製造方法、電気光学装置及びその製造方法、ならびに電子機器
JP2002268084A (ja) * 2001-03-08 2002-09-18 Sharp Corp アクティブマトリクス基板及びその製造方法
TW575777B (en) * 2001-03-30 2004-02-11 Sanyo Electric Co Active matrix type display device
JP2002297060A (ja) 2001-03-30 2002-10-09 Sanyo Electric Co Ltd アクティブマトリクス型表示装置
JP3895952B2 (ja) * 2001-08-06 2007-03-22 日本電気株式会社 半透過型液晶表示装置及びその製造方法
KR100820647B1 (ko) * 2001-10-29 2008-04-08 엘지.필립스 엘시디 주식회사 반투과 액정 표시 장치용 어레이기판 및 이의 제조방법
JP3792579B2 (ja) * 2002-01-29 2006-07-05 シャープ株式会社 液晶表示装置
JP3977099B2 (ja) * 2002-02-25 2007-09-19 株式会社アドバンスト・ディスプレイ 液晶表示装置及びその製造方法
KR100465180B1 (ko) * 2002-04-16 2005-01-13 엘지.필립스 엘시디 주식회사 평판표시장치용 어레이 기판
JP4170110B2 (ja) * 2002-04-26 2008-10-22 シャープ株式会社 液晶表示装置およびその製造方法
JP4063733B2 (ja) 2002-07-10 2008-03-19 Ｎｅｃ液晶テクノロジー株式会社 半透過型液晶表示装置及びその製造方法
KR100467944B1 (ko) * 2002-07-15 2005-01-24 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치 및 그의 제조방법
US6897925B2 (en) * 2002-07-31 2005-05-24 Lg.Philips Lcd Co. Ltd. Transflective liquid crystal display device and method for manufacturing the same
JP4615197B2 (ja) 2002-08-30 2011-01-19 シャープ株式会社 Ｔｆｔアレイ基板の製造方法および液晶表示装置の製造方法
JP3964324B2 (ja) * 2002-12-27 2007-08-22 三菱電機株式会社 半透過型表示装置の製造方法および半透過型表示装置
KR100936954B1 (ko) * 2002-12-31 2010-01-14 엘지디스플레이 주식회사 반사투과형 액정표시장치와 그 제조방법
JP2005121908A (ja) 2003-10-16 2005-05-12 Advanced Display Inc 反射型液晶表示装置および半透過型液晶表示装置ならびにこれらの製法
JP4191641B2 (ja) 2004-04-02 2008-12-03 三菱電機株式会社 半透過型液晶表示装置およびその製造方法
JP4083752B2 (ja) * 2005-01-31 2008-04-30 三菱電機株式会社 アクティブマトリクス基板及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102934154A (zh) * 2011-05-26 2013-02-13 松下电器产业株式会社 显示面板及其制造方法
CN102934154B (zh) * 2011-05-26 2016-04-13 株式会社日本有机雷特显示器 显示面板及其制造方法

Also Published As

Publication number Publication date
US20060169983A1 (en) 2006-08-03
US7554119B2 (en) 2009-06-30
US7923729B2 (en) 2011-04-12
JP2006208881A (ja) 2006-08-10
TW200632428A (en) 2006-09-16
US20090230399A1 (en) 2009-09-17
KR20060088017A (ko) 2006-08-03
JP4083752B2 (ja) 2008-04-30
CN1819217A (zh) 2006-08-16
KR100759282B1 (ko) 2007-09-17
TWI324266B (en) 2010-05-01

Similar Documents

Publication Publication Date Title
CN100514657C (zh) 有源矩阵衬底及其制造方法
JP4191642B2 (ja) 半透過型液晶表示装置およびその製造方法
US6788355B1 (en) Active matrix LCD panel
US7205570B2 (en) Thin film transistor array panel
US7511304B2 (en) Substrate for display device having a protective layer provided between the pixel electrodes and wirings of the active matrix substrate and display device
JP3410656B2 (ja) 液晶表示装置及びその製造方法
US20060216843A1 (en) Method of fabricating array substrate having color filter on thin film transistor structure
KR101221261B1 (ko) 액정 표시 장치용 어레이 기판 및 그 제조 방법
US6559920B1 (en) Liquid crystal display device and method of manufacturing the same
US7023501B2 (en) Liquid crystal display device having particular connections among drain and pixel electrodes and contact hole
JP4115761B2 (ja) アクティブマトリクス基板及びその製造方法並びにそれを用いた表示装置
US20070188682A1 (en) Method for manufacturing a display device
JP3861895B2 (ja) 半透過型液晶表示装置およびその製造方法
JP4799926B2 (ja) 半透過型ｔｆｔアレイ基板、および半透過型液晶表示装置
JPH04338728A (ja) アクティブマトリクス基板
JP4084630B2 (ja) 液晶表示装置
JP4205144B2 (ja) アクティブマトリクス基板及びその製造方法
KR20050055384A (ko) 액정표시패널 및 그 제조 방법
JPH0618922A (ja) 液晶表示装置
JPH04344617A (ja) アクティブマトリクス基板
JP2005266475A (ja) 半透過型液晶表示装置
JP4814862B2 (ja) 液晶表示装置
KR20010064044A (ko) 액정 표시장치 제조방법
KR20070031713A (ko) 액정표시장치 및 그 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant