TWI317982B - Methods of forming pluralities of capacitors - Google Patents

Methods of forming pluralities of capacitors

Info

Publication number
TWI317982B
TWI317982B TW095109106A TW95109106A TWI317982B TW I317982 B TWI317982 B TW I317982B TW 095109106 A TW095109106 A TW 095109106A TW 95109106 A TW95109106 A TW 95109106A TW I317982 B TWI317982 B TW I317982B
Authority
TW
Taiwan
Prior art keywords
capacitors
methods
forming pluralities
pluralities
forming
Prior art date
Application number
TW095109106A
Other languages
English (en)
Other versions
TW200642033A (en
Inventor
Gurtej S Sandhu
D Mark Durcan
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200642033A publication Critical patent/TW200642033A/zh
Application granted granted Critical
Publication of TWI317982B publication Critical patent/TWI317982B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
TW095109106A 2005-03-18 2006-03-17 Methods of forming pluralities of capacitors TWI317982B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/083,489 US7557015B2 (en) 2005-03-18 2005-03-18 Methods of forming pluralities of capacitors

Publications (2)

Publication Number Publication Date
TW200642033A TW200642033A (en) 2006-12-01
TWI317982B true TWI317982B (en) 2009-12-01

Family

ID=36607596

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095109106A TWI317982B (en) 2005-03-18 2006-03-17 Methods of forming pluralities of capacitors

Country Status (8)

Country Link
US (2) US7557015B2 (zh)
EP (1) EP1859476B1 (zh)
JP (1) JP5119426B2 (zh)
KR (1) KR100920016B1 (zh)
CN (2) CN101142657B (zh)
SG (1) SG146611A1 (zh)
TW (1) TWI317982B (zh)
WO (1) WO2006101669A1 (zh)

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CN102064093B (zh) 2013-01-02
US20090209080A1 (en) 2009-08-20
CN101142657B (zh) 2011-08-03
EP1859476B1 (en) 2015-11-04
KR20070104675A (ko) 2007-10-26
JP2008533739A (ja) 2008-08-21
WO2006101669A1 (en) 2006-09-28
SG146611A1 (en) 2008-10-30
US7919386B2 (en) 2011-04-05
CN101142657A (zh) 2008-03-12
TW200642033A (en) 2006-12-01
CN102064093A (zh) 2011-05-18
EP1859476A1 (en) 2007-11-28
JP5119426B2 (ja) 2013-01-16
KR100920016B1 (ko) 2009-10-05
US7557015B2 (en) 2009-07-07
US20060211211A1 (en) 2006-09-21

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