TWI274780B - Anisotropic conduction connecting method and anisotropic conduction adhesive film - Google Patents

Anisotropic conduction connecting method and anisotropic conduction adhesive film Download PDF

Info

Publication number
TWI274780B
TWI274780B TW093130213A TW93130213A TWI274780B TW I274780 B TWI274780 B TW I274780B TW 093130213 A TW093130213 A TW 093130213A TW 93130213 A TW93130213 A TW 93130213A TW I274780 B TWI274780 B TW I274780B
Authority
TW
Taiwan
Prior art keywords
anisotropic conductive
adhesive film
connection
conductive adhesive
circuit board
Prior art date
Application number
TW093130213A
Other languages
English (en)
Other versions
TW200528531A (en
Inventor
Misao Konishi
Original Assignee
Sony Chemicals & Information D
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Chemicals & Information D filed Critical Sony Chemicals & Information D
Publication of TW200528531A publication Critical patent/TW200528531A/zh
Application granted granted Critical
Publication of TWI274780B publication Critical patent/TWI274780B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/83051—Forming additional members, e.g. dam structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83859—Localised curing of parts of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0548—Masks
    • H05K2203/056—Using an artwork, i.e. a photomask for exposing photosensitive layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Non-Insulated Conductors (AREA)
  • Combinations Of Printed Boards (AREA)

Description

l27478〇 九、發明說明： 【發明所屬之技術領域】 本發明係關於使電路基板之連接端子與電子元件之連 接部形成電氣連接之方法、以及使用於該方法之異向性導 電黏著膜。 【先前技術】 以往’電路基板之連接端子與其他電路基板或ic晶片 等兒子元件之連接部，係利用圖4(a)所示之異向性導電黏著 犋43(將導電粒子41分散在熱硬化型樹脂42而成）進行連鲁 然而，為了提昇該異向性導電黏著膜之連接可靠性， 盘：：異：性導電連接時’須提昇在電路基板之連接端* . =子兀件之連接部間之導電粒子捕捉性。針對此，如目. )所二係使異向性導電黏著膜43整體之導電粒子數較
圖（a)之h形增加，亦或如圖4(c)所干^ ^ A 4(a)^ m (C)所不，雖導電粒子數與圖 …Γ 將導電粒子密度增大之薄膜與不含導電 粒子之熱硬化型黏著劑層44積 赢蠢 43。 、9而作成異向性導電黏著膜•參 一而，如圖4(b)與圖4(c)所示 性並不夠，因此，在專利文 心，導電粒子捕捉 著劑之薄膜其熔融黏度:係、利用'周整附層間絕緣黏 電黏著膜整體之一 接之熱壓接時，抑制導電粒子由連接區：：異向性導電連 動。 £域向非連接區域移 5 1274780 (專利文獻1)日本特開2〇〇〇_1〇4〇33號公報 然而，若異向性導電黏著膜整體之熔融黏度增加，由 於1進行異向性導電連接時整體不易流動，故必須增加壓 接日守之壓力’纟某些情形下有可能會損傷電路基板或電子 凡件。再者’在熱®接前，冑電路基板與電子元件間進^ 暫黏著時’黏著力残，導致容易產生剝離或偏移之問題: 【發明内容】 ·· 本發明之目的在於，當電路基板之連接端子與電子元 件，接部利用異向性導電黏著膜進行異向性導電連接時， ::升導電粒子之捕捉性，同時不增大壓接時之壓力以確 '、:、向& $電黏著膜整體之流動性，且可使電路基板與電 子元件彼此間以足夠的強度進行暫黏著。 ·· 本务明人等發現出，關於異向性導電黏著膜之絕緣性 黏著劑，若使用光硬化型絕緣性樹脂，以光線照射電路基 ^之Ϊ接端子上或連接端子之周圍上之異向性導電黏著膜 y %路基板與電子元件彼此間能以足夠的強度進行暫黏 者，且可確保在異向性導電連接時整體之流動性，同時; ，各連接端子上或連接端子之周圍上之異向性導電黏 其溶融黏度增加，其結果，不須增加塵接時之屢力即可提 升異向性連接部位之導電粒子捕捉性’而完成本發明。 亦即’本發明之第丨形態，係提供—種異向性導電連 接=1以使電路基板之連接端子與電子元件 订異向性導電連接，其包含下列步驟⑷〜⑷： 膜在電路基板上配置異向性導電黏著膜，該黏著 、’、：V電粒子分散在光硬化型絕緣性黏著劑而構成； 6 1274780 步驟（b)在該異向性導電黏著膜上配置曝光用光罩，其 、 具有與電路基板之連接端子對應之曝光圖案； 步驟（c)透過曝光用光罩以光線照射該異向性導電黏 著膜，使该異向性導電黏著膜受光線照射之曝光部進行光 ‘ 聚合’而增加其熔融黏度；以及 步驟（d)取下曝光用光罩，在電路基板之連接端子相對 應處，由異向性導電黏著膜側將電子元件之連接部與其對 位使兩者始、合，以光線照射異向性導電黏著膜整體，使整 版進仃光聚合，藉此使電路基板之連接端子與電子元件之鲁_ 連接部連接。 又，本發明之第2形態，係提供一種異向性導電連接 =方法，用來使電路基板之連接端子與電子元件連接部進 - 订異向性導電連接，其包含下列步驟（a，）〜（d，）·· · “步驟（a’）在電路基板上配置積層型異向性導電黏著 膜^該黏著膜具有：將導電粒子分散在光硬化型絕緣性黏 # J而成之異向性導電黏著劑層，與至少設於其單面之熱 硬化型黏著劑層； ⑩⑩ 一步驟（b’）在該積層型異向性導電黏著膜上設置曝光用 — 八一有與琶路基板之連接端子對應之曝光圖案； 、胃/驟（C )透過曝光用光罩以光線照射該積層型異向性 導=黏著膜，使積層型異向性導電黏著膜之光硬化型異向 性導電黏著劑層受光線照射之曝光部進行光聚合，而增加 · 其少谷融黏度；以及 一 步驟（d’）取下曝光用光罩，在電路基板之連接端子相 7 !274780 由異向性導電a著膜側將電子元件之連接部愈並 電路吴Γ者Γ合，至少使熱硬化型黏著劑層硬化，藉此使 电土板之連接端子與電子元件之連接部連接。 …再者’本發明之第3形態，係提供—種異向性導電黏 I:生=導電粒子分散在光硬化型絕緣性黏著劑而成之 /、向性導電黏著劑層所構成者，其特徵在於： 按照異向性導電遠接圖安， 妾0 * 在異向性導電黏著膜之 導电黏著劑層t設置熔融黏度相異之區域。 j根據本發明’當電路基板之連接端子與電子元件連 ㈣用異向性導電黏著劑或異向性導電黏著膜進行導 =、查可㈣導電粒子之捕捉性’同時確保在進行異向性 甩、接¥整體之流動性，不須增加塵接時之屢力，且 使電路基板與電子元件之連接強度非常強。 【實施方式】 、關於本發明第Μ態其電路基板之連接端子與電子元 件連接料行w性導電連接之以，參 道步驟。 母 步驟（a) 如圖1(a)所示，在電路基板i上配置光硬化型異向性導 電黏著：4’該黏著膜4係將導電粒子2分散在光硬化型絕 緣性黏著劑3而構成。 關於電路基板1’可使用軟性印刷配線基板（特開平 U_〇13654號公報等）、半導體裝置用中繼基板⑽開平 1 1-097101號公報等）、附凸塊之配線電路基板（特開 8 1274780 2000-3 03 745號公報等）、陶瓷配绩 ’尤配線電路基板、使用預浸物 之多層配線電路基板等周知之電路基板，伸基本上 所使用者，係在聚醯亞胺膜或氧化紹板等之絕緣性基板^ 上形成銅落等金屬落經圖案化而成之配線電路（未圓未），並 在配線電路端部形成連接端子lb(用來與其他之電子元件 (如軟性配線基板、IC晶月、天線元件、電容元件、電阻元 件等）連接）。在端子間亦可形成周知之絕緣性覆蓋層lc。 構成光硬化型之異向性導電黏著膜4之導電粒子，可 為-般用於異向性導電黏著膜之導電粒子。可使用例如： 鎳、鐵、銅、鋁、錫、金L、枚 力丄 Α 场銘鉻、鈷、銀、金等各種金屬或 金屬合金粒子、金屬氧化物’在碳、石墨、玻璃或陶竞、 塑膠等粒子表面塗布金屬者，或更進一步在該等粒子表自-塗布絕緣薄膜者。該等導電粒子之粒徑或材質可根據料 · 接之電路基板之配線間距或圖案、連接端子之厚度或材質 等適當選擇。 ' 構成光硬化型之異向性導電黏著膜4之光硬化型絕緣 性黏著劑3’可使用周知之自由基聚合型或陽離子聚合型之鲁· 光，化型黏著劑。在此’「光」可為紫外線、電子線、Χ射 線等活性能量射線等。再者，關於光硬化型黏著劑之黏著 ^刀’例如可為光聚合性丙稀酸系化合物，尤以分子量（重 量平均分子量）1_〇以下之丙稀酸系單體或低聚物較佳。 尤其以（曱基）丙烯酸院基@旨、（曱基）丙烯酸芳基烧基_、聚| 氨_變性丙烯酸醋、環氧變性丙烯酸醋等更理想。可單冑 使用上述化合物或將兩者以上合併使用。 9 1274780 在光硬化型絕緣性黏著劑3中，光聚合起始劑可使用 A知之光硬化型丙烯酸系黏著劑所採用者。可列舉如：二 ^甲㈣、乙酸苯系、苯偶姻、苯偶㈣基衫、苯偶^ 本偶醯二甲基酮縮醇、醯基膦氧化物系、硫雜憩酮系等之 2光♦合起始劑。該等光聚合起始劑可單獨使用，亦可組 合使用。Μ，亦可添加脂肪族胺或芳香族胺作為光聚合 助劑。 口 雖然光水合起始劑之用量隨使用之光硬化型黏 而異，但在使用聚合性丙烯酸系化合物時，以每i⑽重量 伤之♦合型丙烯酸系化合物添加0·1〜10重量份較佳。 、在光硬化型絕緣性黏著劑3中，除了上述成分，亦可 視需要適當配合苯氧樹脂或環氧樹脂等熱塑型樹脂、交聯 d α種橡膠成分、填充物、均化劑、黏度調整劑、氧化 防止劑等。 光硬化型之異向性導電黏著膜4之製造，例如將構成 光硬化型絕緣性黏著劑3之各成分、導電粒子、光聚合起 始劑以及其他添加成分、與視需要之甲苯等溶劑均勻混籲· 合’而塗布在聚對苯二甲酸乙二醇醋（ΡΕΤ)板等的剝離板 上’經乾燥成膜而製造出。 步驟（b) 接者’如圖l(bl)與（b2)所示，在異向性導電黏著膜4 上配置曝光用光罩5 ’其具有與電路基板1之連接端子lb 對應之曝光圖案。在此’曝光用光罩5之曝光圖案，係為 使電路基板1之連接端子。上之異向性導電黏著膜4受光 10 I274780 二之圖案（圖1(Μ))，或為使在電路基板i之連接端子㈣ =異向性導電黏著膜4受光照之圖案（圖啊)）。在此， :明連接端子lb之周圍並非僅表示以圓或正方形將連接端 lb包圍’亦包含以線狀包夾之情形或匕型包圍之情形。 !b相又斜僅曝光用光罩5除了具有與電路基板1之連接端子 同之結構'之曝光圖案外’可為與先前周知之曝光用光罩相 步驟（C) ·· 4,使接//透料光用光罩5以光照射異向性導電黏著膜 掩加二性導電黏著膜4受光照之曝光部進行光聚合，以 二=之炫融黏度。在此，在圖1㈣之曝光圖案之情 上之異2=)所示/提高了在電路基板1之連接端子b 包黏著膜其曝光部4a之熔融黏度。1 έ士果， 可提高在該曝光部4a中 X —果 向性導電與^ 捕捉性。並且由於在異 路其板…之非曝光部並未進行光聚合反應，故電 ·· ::1進，電子元件間可進行強度十分強之暫黏著，且可 之流動=導電1接時，異向性導電黏著膜4整體 不必過度&鬲屢接時之屋力。 示，===_之曝光圖案之情形中，如⑽所 電黏著路基板1之連接料^訂之異向性導 之；向=光部^之嫁融黏度。其結果，在連接端子上 此雖然由炫光部4b之炫融黏度並未提高，因 粒子2較易=點，從連接端子】bJL屡接時，導電 ^ ，但由於在該非曝光部仆周圍形成熔融黏 11 1274780 -阿㊣域，結果可提高在該非曝光部仆中導 捉性。再者，由於在異向性導電黏著膜 :子之捕 仃光聚合反應，故電路基板】與 元 '並未進 分強之暫黏著，且可確保在進行:：=可進行強度十 性導電黏著m 4整體之流動性，壓接時之壓連力接:。，異向 降得更低。因此，適 :圖::) 之情形。 销·^凸塊連接 步驟（d) …二著：下曝光用光罩5,在電路基板1之連接端子 接部6a與直對位使兩者一 側將電子π件6之連 +〜 使兩者猞合’且以光線照射異向性導”， 1者艇4整體，使其進行光聚合而使電路基板^之連接端; 與電子元件之連接部以良好連接可靠性進行異向性導電 间之(二1Γ))。在此，電子元件6可舉出如與電路基板1相 屯路基板或軟性配線基板、IC晶片、天線^件、電六 ·· 凡件、電阻元件等，再者，該連接部6a可為-般之凸： 電極墊。 〇奴之凸塊或 接著，關於本發明第2形態之異向性導電連接 =2說明每一道步驟。再者，在第2形態=導 妾方法中，關於使用至少在其單面設置熱硬化型黏著 ^之積層型異向性導電黏著膜這點，係與第1形態之異向 [生導電連接方法相異。如圖4⑷之相關說明，藉由使用該 層型異向性莫命活_ 、 曰 八Π注V包黏者膜，可使含導電粒子之層厚度變薄而 提Γ1 ‘私粒子岔度，故不須增加導電粒子總量，即能達到 12 I274780 良好之連接可靠性，其結果，可降低異向性連接之成本。 步驟（a，） 首先如圖2(A1)或圖2(A2)所示，在電路基板21上配 置積層型異向性導電黏著膜25，該黏著膜25具有：將導電 :子=分散在光硬化型絕緣性黏著劑23而成之異向性導 2著』層24，與至少設於其單面之熱硬化型黏著劑層 型黏=二2(:=形中，雖然將在單面設有熱硬: 之積層型異向性導電黏著膜26以異向性導 ·· 石H占:劑層24在電路基板21側之方式配置’但亦可將敎 硬化型黏著劑層25置於電 …、 之情形中，亦可你田+ 在圖2(A2) 。使用在雙面設置熱硬化型黏著劑層25之产 运型異向性導電黏著膜26 〇 貝 構成熱硬化型黏著劑層25之熱硬化型樹脂可列 :树脂、聚氨醋樹脂、不飽和聚醋樹脂等。其中 ： ·· 體之環氧樹脂較佳。此時，亦可併用在常温為液 ^乳樹脂。常溫為固體之環氧樹脂中常溫為液狀之環 :的：合比率’可按照異向性導電黏著膜所要求之性 。再者’為了提升上述固態或液狀環氧樹脂所 剝離強可挽性程度，且藉此提升異向性導電黏著膜之 =脂較佳。在此，熱硬化型絕緣性黏著劑中之可撓:生 衣虱樹脂含量，若添加過少無法得到充分之 & 加效果’添加過多則將降低耐熱性，故以5〜二= /〇較佳，又以5〜25重量％較理想。 里 13 1274780 冉者，V電基板21、導電粒子22與 著劑23可分別使用與圖！所說明之導電基板广絕緣性黏 2與光硬化型絕緣性黏著劑3相同者。土 1、導電粒子 積層型異向性導電黏著膜26之製作， 化型絕緣性黏著劑3之各種成分 將構成光硬 #住力乂刀、導電粒子、取 及其他添加成分、與視需要之甲笨等溶劑—：:：： =，在ΡΕΤ板等剝離板上塗布經乾“作成 :!電黏著膜：另-方面’熱硬化型樹脂可利用模鑄法 ·· 製作出。 旧之積層法進行積層而 步驟（b’） 上配2；ΓΛ2(Α_之積層型異向性導電黏著膜％ 上配置曝光用光罩27’其具有與電路基板Η ·· 2 广相對應之曝光圖案。該步驟與圖^之形態之步驟剛 :::相同。在此，當曝光用光罩”之曝光圖案係供光昭 路基板21之連接端子叫上之積層型異向性導電黏 =26之情形時’其圖案如圖2(bi)所示；其係供光照射 在笔路基板21之連接端子2lb周圍上之積層型異向 黏著膜26之情形時’纟圖案如圖2(B2)所示。 再者’在圖2(A2)之情形中，可與圖2(ai)之情形相同 設置曝光用光罩27(圖未標示）。 步驟（C’） 接著，透過曝光用光罩27以光照射㈣型異向性導電 黏著膜26’使積層型異向性導電黏著臈26之異向性導電黏 14 1274780 著劑層24其受光照之曝光部24a進行光聚 熔融黏度增大。在此，者苴 便/ ^刀之 田為圖2(B1)之曝光圖荦時 2⑼）所示，電路基板21之 間T如圖 # , 接而子21b上之異向性導雷斑 者膜26其異向性導電黏著 ^ 大。其結果，可提升該曝光;=曝 =部24_黏度變 再者，由方…“ 導電粒子22之捕捉性。 丹者由方；在異向性導電黏荽瞪？ <甘W人、,* 24之非曝光部⑽並未進行聚人，^性導電㈣劑層 元件間可進行強度十分:二％路基板21與電子 性導電連接Η* η 之者’且可確保在進行異向 電連接'，異向性導電黏著膜26整體之流動性，而不 必過度提高壓接時之壓力。 動I"生而不 再者，當其為圖2(Β2)之曝光圖案時 電路基板以之連接端子21b周圍上之所不， 層……== 、、、口果，由於在連接端子2113上 八 向忖導雷匈菩*丨思9 上之異向性導電黏著膜26其異 ,_層24之非曝光部24b之炫融黏度並未提 時，導電粒子22較㈣m;m2ib上厂堅接 :=::2高之區域(播堤)，故可提高在該非曝光部24b …白性導二捕捉性。再者，由於在異向性導電黏著膜 合反應故電路1層24其非曝光部24b並未進行光聚 暫黏著，i了？ 與電子元件間可進行強度十分強之 4者胰26整體之流動性 ：逼 相較，可降得更低。因此，適入大面^力與圖1(C1)之情形 k 口大面積之凸塊連接之情形。 15 1274780 步驟（d’） 接著，取下曝光用光罩27,在電路基板21之連接端子 2 lb相對應處’由積層型異向性導電黏著膜％側將電子元 :夕之連接部28a與其對位使兩者密合，至少使熱硬化型 :者劑層25熱硬化’而使電路基板21之連接端子训與 ·· 件28之連接部28a連接。在此，亦可利用光線照射 更化型之異向性導電黏著膜24使其硬化。藉此，可使電 路：板21之連接端子21b與電子元件以之連接部W以良 子連接可靠性進行異向性導電連接（圖2(D))。在此，電子元 件28可使用與如圖1(d)所說明之電子元件6相同者。 如圖3⑷所示’使用上述本發明之第i與第2形態之显 向性導電連接方法所得之異向性導電黏著膜1電 分散在光硬化型料性黏㈣33*成之異向性導 ㈣成者’按照異向性導電連接圖案，異向性導 好相對古1中具线融黏度相異之區域，亦即，具有溶融 站度相對回之區域X與相對低之區域Y。 ·· 耶υ!斤異兒t月性導「電連接部位為區域x時，如圖1⑽與圖 加_度之::：相口當:利用光之照射進行光聚合而增 在區域x中，’如圖1(e_2(ci)之說明， 與電子元件門二 子之捕捉性。再者，電路基板 行昱⑽^ 度十分強之暫黏著，且可確保在進 二！.=連接時，異向性導電黏著膜整體之流動性， 而不必過度提高壓接時之壓力。 再者’當異向性導電連接部位為區域¥時，如圖】⑽ 16 1274780 與圖2(B2)所說明，區域丫係被異向性導電連接部 炫融黏度大之區域X所包圍之區域， 其結果’可提高在該區域”之導電粒子捕捉性。 :者’電路基板與電子元件間可進行強度十分 者，且可確保在進行異向性導電連接時，異向性導電Μ 版整體之流動性，墨接時之壓力與圖i⑼之情形相較: 降得更低，ϋ此適合較大面積之凸塊連接之情形。 ·· =者，如圖3⑻所示，在該異向性導電黏著膜η，可 在其單面（圖3(b))或雙面設置熱硬化型黏著劑層3斗。 再者，導電粒子32、光硬化型絕緣性黏著劑&献硬 化型黏著劑層34可分別與前述之導電粒子2、光硬化型絕 緣性：著劑33、熱硬化型黏著劑層25之構成相同。、巴 貫施例1〜3、比較例1〜2 將表1所示之成分以固體成分為60重量％的方式均勻 混合在甲苯與乙酸乙醋之混合溶劑(重量Λ 1:1)中，調製紫 外線硬化型黏著劑組成物，以乾燥厚成為2G_或卿m之 方式塗布纟已進行剝離處理《聚對$二甲酉变乙二醇酿膜φφ 上三在80〇C進# 5分鐘之乾燥而製成光硬化型異向性導電 黏者膜。該膜之炼融黏度（以流變儀Rsl5〇(哈克公司）測量） 在紫外線照射前為6.0xlo6mPa.s(8〇〇c)，在紫外線照射 (200mj/cm2(320〜39〇nm))後為 3 〇χ1〇8η^ s⑽。c)。 再者，將表2所示之成分以固體成分為6〇重量％的方 - 式均勻混合在甲苯與乙酸乙酯之混合溶劑（重量比中， 調製熱硬化型黏著劑組成物，以乾燥厚成為1〇μιη、 17 1274780 或40μηι的方式塗布在已進行剝離處理之聚對苯二甲酸乙 二酉享酉旨膜上4 8代進#5分鐘之乾燥而製成熱:化=黏 著膜。該膜之熔融黏度（以流變儀RSl5〇(哈克公司）測量）為 6.0xl06mPa.s(80oC)。 實施例1之光硬化型異向性導電黏著膜係使用4〇μηι厚 之單層者；實施例2之積層型異向性導電黏著膜係使用在 ¥厚之光硬化型異向性導電黏著膜之單面以通常方法積 層2以111厚之熱硬化型黏著膜者，實施例3之積層型異向性 ·· 導電黏著膜係使用在20μιη厚之光硬化型異向性導電黏著 膜之雙面以通常方法積層10μιη厚之熱硬化型黏著膜"者\ 再者’比較例i之熱硬化型異向性導電黏著膜，係將 表3所示之成分以固體成分為6〇重量％的方式均句混合在 甲苯與乙酸乙醋之混合溶劑（重量比1:1)中，調製敎硬化型 黏著劑組成物，以乾燥厚為4G_的方式塗布在已進行剝離 處理之聚對苯二甲酸乙二醇_膜上，在_進行5分錄乾 ·· 燥而製成熱硬化型黏著膜。該膜之溶融黏度(以流變儀 RS150(哈克公司）測量）為6 〇xl〇6m]pa s(扣。〇。 再者，比較例2之熱硬化型異向性導電黏著膜，係將 斤示之成分以固體成分為6〇重量％的方式均句混合在 =乙酸乙醋之混合溶劑(重量比1:1)中，調製熱硬化型 黏者劑組成物，以乾燥厚為4〇 處理之聚對苯二甲酸乙_醇丄：塗布在已進行剝離 。 ^ .酉曰膜上，在8〇0c:進行5分鐘齡 少呆而製成熱硬化型黏著膜。今膜 ' ρςιςπ/ ^ 膜忒膜之蝽融黏度（以流變儀 (哈克公司）測量）為 9.0xl07mPa.s(80〇C)。 18 1274780 [表i] 成分 重量份 苯氧樹脂(YP50，東都化學公司製） 10 環氧樹脂(HP7200H，大曰本油墨化學工業公司製） 10 含環氧基之環氧丙烯酸酯低聚物(EB3605，聯邦電石公司製） 10 環氧樹脂(HX3941HP，大日本油墨化學工業公司製） 10 光聚合起始劑(TPO，BASF公司製） 1 導電粒子(鍍Ni/金樹脂粒子(3.2μηι)，日本化學工業公司製） 9 ❿❿ [表2] 成分 單位重量 苯氧樹脂(ΥΡ50，東都化學公司製） 10 環氧樹脂(HP4032D，環氧基當量136〜150g/eq，大日本油墨化學 工業公司製） 20 環氧分散咪唑系硬化劑（HX3941HP，旭化成環氧公司） 15 [表3] 成分 單位重量 苯氧樹脂(YP50，東都化學公司製） 10 環氧樹脂(HP4032D，環氧基當量136〜150g/eq，大日本油墨化學 工業公司製） 20 環氧分散咪唑系硬化劑（HX3941HP，旭化成環氧公司） 15 導電粒子(鍍Ni/金樹脂粒子(3.2μχη)，日本化學工業公司製） 10 19 1274780
ϋϋ 成分 晃氧樹脂(ΥΡ50，東都化學公司製） 環氧樹脂(HP4032D，環氧基當量136〜150g/eq，大日本^f匕學工 業公司製） ^ 10 環氧分散咪唑系硬化劑（HX3941HP，旭化成環 導電粒子(鑛Ni/金樹脂粒子(3·2μηι)，日本化學 關於所製成之各實施例與比較例之s 杈例之異向性導電黏著鲁 膜，如下述說明進行黏著性評估。再去，社… w 丹者，使用所製成之各 實施例與比較例之異向性導電黏著膜 电扣考臊將測試用電路基板 與測試用透明液晶基板進行显向性莫#、& 、门a ¥私連接。此時捕捉之 、 粒子數量依照下述說明測量之。所得 1忖又結果如表5所示。 - 、再者，關於實施：i之異向性導電黏著膜，在測試用 透明液晶基板上设置異向性導電黏著膜，而r 200mj/cm2(320〜39〇nm)之條件照射在連接端子上之里而^ ·· 導電黏著膜後’使其與測試用電路基板對位，以 1 70°Cx80MPax lOsec之條件進行埶辩接 ”向性導電黏著膜， 200mJ/cm2(320〜390nm)之條彼刀 、 j〈條件照射在連接端子上 導電黏著膜後，使其鱼、、丨 八向14 nyCxSOMPaxlOsec 之條件 了位以 疋1丁，、、、&接。又，關於音 之異向性導電黏著膜，l皆加* ^ 、貝&例2 劑層設置在測試用透明液晶基板側。 * -黏者 20 !27478〇 再者，關於比較例1〜2之熱硬化型異向性導電黏著膜， 在測試用透明液晶基板上設置異向性導電黏著膜，使其、與 測試用電路基板對位，以17〇£>Cx8〇MPaxl〇sec之條件、 熱壓接。 仃 黏著性 在玻璃板利用熱壓機將ACF(異向性導電黏著膜}/剝離 處理PET(l對苯二甲酸乙二醇酯）以4〇0(：：χ〇·5Μρ&χ28α之 條件進行熱壓接，之後將剝離處理之pET剝下，觀察露出 之ACF狀態。 (評價標準） 等級 標準 〇：ACF轉黏在玻璃上 x:ACF未轉黏在玻璃上 粒子捕捉性 以顯微鏡算出壓接後之IC凸塊（每一個凸塊之表面積 ==2500μηι2)上之導電粒子數，以其平均值作為粒子捕捉數。 ·· [表5] 評價項目 實施例 比較例 1 2 3 1 2 黏著性 〇 〇 〇 〇 X 導電粒子捕捉數(個/2500μχη2) 25 24 22 16 19 21 1274780 由表5可知，名本奸^ 硬化型里Μ ㈣下’使用單層紫外線 更化左異向性導電黏著劑之異向性導電黏著 接端子上之黏著劑熔融 、由；使連 之捕捉性亦佳。在::：Γ故黏著性佳，導電粒子 相同，使連接端情形下，與實施例1之情形· .^ 7 黏者劑熔融黏度增加，但相較於實 =t情形’不僅在單面設置熱硬化性黏著劑声，且紫 化型異向性導電黏著劑層之厚度亦減半：1 j者Γ之問題，而且雖然紫外線硬化型異向性導電黏著 广但導電粒子捕捉數僅降低4%，在實際應·· 生問題。在實施例3之情形下，與實 =:，使：接端子上之黏著劑熔融黏她^ 紫1之h形’不僅在雙面設置熱硬化性黏著劑層，‘ f 、 雖然糸外線硬化型異向性導 層之厚度減半，但導電粒子捕捉數僅降低12%， 在見IV、應用上並不會產生問題。 埶 面在比較例1與2之情形下，由於使用單層__ :、i異向性導電黏著劑之異向性導電黏著膜，故有 龟粒子捕捉十生> Η θ 哥 之問題。 σ174。在比較<列2之情形下，則有黏著性 根據本發明之異向性導電連接方法’當電路基板之連 2子2電子元件連接部利用異向性導電黏著劑或異向，随 π ^者膜進彳了導電連接時，可提升導電粒子之捕捉性，. 。時確保在進行異向性導電連接時整體之流動性，不須増 22 1274780 加：接時之塵力，而可使電路基板與電子元件之連接強度 非兩強ci此’本發明之異向性導電連接方法係適用於各 種電路基板與電子元件間之連接者。 【圖式簡單說明】 圖1⑷,係本發明之異向性導電連接方法之步驟說 明圖。 圖（A1)⑺）係本發明之異向性導電連接方法之步 說明圖。 二(')’係本發明之異向性導電黏著膜之截面圖。φ· ::〜Ο係習知異向性導電黏著膜之截面圖。 主要兀件代表符號說明】 1、21 la lb 、 21b 1 c 2 、 22 ' 32 3 、 23 、 33 4、31 4a 、 24a 4b 、 24b 5、27 6、28 6a n 28a 電路基板 ‘ 絕緣性基板 - 連接端子 覆蓋部 導電粒子 光硬化型絕緣性黏著劑 __ 異向性導電著膜 曝光部 非曝光部 曝光用光罩 電子元件 ^ 連接部 光硬化型之異向性導電黏著劑層 23 24 1274780 25 - 34 熱硬化型黏著劑層 26 積層型異向性導電黏著膜 24

Claims (1)

1274780 十、申請專利範圍： 1.-種異向性導電連接方法，係將電路基板之連接端子 與電子元件連接部進行異向性導電連接之方法，其特徵在 於包含下列步驟（a)〜（d): 步驟（a)在電路基板上配置異向性導電黏著膜，該黏著 膜係將導電粒子分散在光硬化型絕緣性黏著劑而構成·， 步驟（b)在該異向性導電黏著膜上配置曝光用光罩，其 具有與電路基板之連接端子對應之曝光圖案； 〃 ·· v驟（c)透過曝光用光罩以光線照射該異向性導電黏 著膜’使該異向性導電黏著膜受I線照射之曝光部進行^ 聚合，而增加其熔融黏度；以及 步驟⑷取下曝光用光罩’在電路基板之連接端子相對 應處，由異向性導電黏著膜側將電子元件之連接部與其對 位使兩者密合，以亦錄昭直 尤綠…、射異向性導電黏著膜整體，使整 體進行光聚合，II此使電路基板之連接端子與電子元件之 連接部連接。 2·如申請專利範圍第i項之異向性導電連接m中籲鲁 在步驟⑷，係將光照射在電路基板連接端子上之異向 笔魏著膜。 〜 料利範圍第丨項之異向性導電連接方法，其中 /驟⑷’係將光照射在電路基板連接端子周圍之異向性 導電黏著、_。 向性導電連接方法，係將電路基板之連接端子 i子㈣連接料行異向性導電連接之方法，其特徵在 25 1274780 於包含下列步驟（a，）〜（d，）： 步驟（a )在電路基板上配置積層型異向性導電黏著 膜’該黏著膜具有：將導電粒子分散在光硬化型絕緣性黏 著劑而成之異向性導電黏著劑層，與至少設於其單面之熱 硬化型黏著劑層； 步驟03，）㈣積層型異向性導電黏著膜上配置曝光用 光罩’其具有與電路基板之連接端子對應之曝光圖案； 、步驟⑹ϋ過曝光用光罩以光線照射該積層型異向性 ·· 導電黏著膜’使積層型異向性導電黏著膜之光硬化型異向 :生導電黏著劑層受光線照射之曝光部進行光聚合，而增加 炫融黏度；以及 步驟（d’）#下曝光用光罩’在電路基板之連接端子相 對；處’由異向性導電黏著膜側將電子元件之連接部與其 者密☆’至少使熱硬化型黏著劑層硬化，藉此使 -路基板之連接端子與電子元件之連接部連接。 ·· 在牛^ Π凊專利範圍第4項之異向性導電連接方法，其中 在步驟（C )，係將光照射在 向性導電㈣膜。基板連接端子上之積層型異 在牛請專利範圍第4項之異向性導電連接方法，其中 = 係將光照射在電路基板連接端子 異向^^電黏著膜。 預曰I 型絕向性導電料膜’係將導電粒子分散在光硬化 特徵在於： 门性導電黏者劑層所構成者，其 26 1274780 按照異向性導電連接圖案，而在異向性導電黏著膜之 異向性導電黏著劑層中設置熔融黏度相異之區域。 8.如申請專利範圍第7項之異向性導電黏著膜，其中至 少在異向性導電黏著層之單面形成熱硬化型黏著劑層。 十一、圖式： 如次頁。 ·· 27
TW093130213A 2004-02-26 2004-10-06 Anisotropic conduction connecting method and anisotropic conduction adhesive film TWI274780B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004052260A JP4385794B2 (ja) 2004-02-26 2004-02-26 異方性導電接続方法

Publications (2)

Publication Number Publication Date
TW200528531A TW200528531A (en) 2005-09-01
TWI274780B true TWI274780B (en) 2007-03-01

Family

ID=34908664

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093130213A TWI274780B (en) 2004-02-26 2004-10-06 Anisotropic conduction connecting method and anisotropic conduction adhesive film

Country Status (7)

Country Link
US (1) US7655107B2 (zh)
JP (1) JP4385794B2 (zh)
KR (1) KR101086182B1 (zh)
CN (1) CN1926675B (zh)
HK (1) HK1103169A1 (zh)
TW (1) TWI274780B (zh)
WO (1) WO2005083772A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8570470B2 (en) 2008-08-20 2013-10-29 Lg Chem, Ltd. Adhesive agent
US11195813B2 (en) 2014-02-04 2021-12-07 Dexerials Corporation Anisotropic conductive film and production method of the same

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237517A (ja) * 2005-02-28 2006-09-07 Sanyo Electric Co Ltd 回路装置およびその製造方法
KR100608533B1 (ko) * 2005-05-13 2006-08-08 쓰리엠 이노베이티브 프로퍼티즈 캄파니 전기 전도성이 우수한 고분자 수지 및 그 제조방법
KR20080004021A (ko) * 2006-07-04 2008-01-09 쓰리엠 이노베이티브 프로퍼티즈 캄파니 양면의 접착력이 서로 다른 전도성 점착 테이프 및 그제조방법
KR101269741B1 (ko) * 2006-07-04 2013-05-30 쓰리엠 이노베이티브 프로퍼티즈 캄파니 탄성 및 접착성을 갖는 전자기파 차단용 가스켓
JP5046581B2 (ja) * 2006-07-28 2012-10-10 旭化成イーマテリアルズ株式会社 回路接続用接着剤
KR101155709B1 (ko) * 2006-12-27 2012-06-12 파나소닉 주식회사 도전성 범프와 그 형성 방법 및 반도체 장치와 그 제조 방법
KR20090067964A (ko) * 2007-12-21 2009-06-25 쓰리엠 이노베이티브 프로퍼티즈 캄파니 점착 테이프 및 그 제조방법
JP4814277B2 (ja) * 2008-04-18 2011-11-16 ソニーケミカル＆インフォメーションデバイス株式会社 接合体、該接合体の製造方法、及び該接合体に用いられる異方性導電膜
JP5402109B2 (ja) * 2009-02-27 2014-01-29 デクセリアルズ株式会社 異方性導電フィルム及び発光装置
JP4581016B2 (ja) * 2009-03-25 2010-11-17 株式会社東芝 半導体チップ実装体、半導体チップ実装体の製造方法および電子機器
ES2664320T3 (es) * 2009-10-30 2018-04-19 Research Frontiers Incorporated Películas de SPD y laminados de válvula luminosa con conexiones de barras ómnibus mejoradas
JP5857383B2 (ja) * 2010-02-26 2016-02-10 エルジー・ケム・リミテッド 粘着剤組成物
JP2010251789A (ja) * 2010-06-22 2010-11-04 Sony Chemical & Information Device Corp 接合体及びその製造方法
KR101332441B1 (ko) * 2010-12-31 2013-11-25 제일모직주식회사 이방 도전성 필름
DE102011057172A1 (de) * 2011-12-29 2013-07-04 Gp Solar Gmbh Verfahren und Vorrichtung zur Herstellung einer Beschichtung auf einem Halbleiterbauelement
TWI454195B (zh) 2012-04-19 2014-09-21 Chunghwa Picture Tubes Ltd 固設半導體晶片於線路基板之方法及其結構
TWI547538B (zh) 2012-08-24 2016-09-01 Dexerials Corp 異向性導電膜之製造方法及異向性導電膜
KR101716945B1 (ko) 2012-08-24 2017-03-15 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름 및 그의 제조 방법
JP5714631B2 (ja) * 2013-03-26 2015-05-07 富士フイルム株式会社 異方導電性シート及び導通接続方法
JP6241326B2 (ja) * 2014-03-07 2017-12-06 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
KR101681410B1 (ko) * 2015-04-20 2016-11-30 삼성전기주식회사 커패시터 부품
CN109904705B (zh) * 2017-12-07 2021-10-08 泰科电子(上海)有限公司 导电端子坯料条的制造方法和导电端子的制造方法
KR102530672B1 (ko) * 2018-07-20 2023-05-08 엘지디스플레이 주식회사 스트레쳐블 표시 장치
KR20210114596A (ko) * 2020-03-10 2021-09-24 삼성디스플레이 주식회사 표시장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2547895B2 (ja) * 1990-03-20 1996-10-23 シャープ株式会社 半導体装置の実装方法
US5187020A (en) * 1990-07-31 1993-02-16 Texas Instruments Incorporated Compliant contact pad
US6189208B1 (en) * 1998-09-11 2001-02-20 Polymer Flip Chip Corp. Flip chip mounting technique
JP2000104033A (ja) 1998-09-30 2000-04-11 Sumitomo Bakelite Co Ltd 多層プリント配線板用層間絶縁接着剤及び多層プリント板の製造方法
JP2000105388A (ja) * 1998-09-30 2000-04-11 Matsushita Electric Ind Co Ltd 液晶表示装置の製造方法、液晶表示装置、および導電性接着フィルム
US6218629B1 (en) * 1999-01-20 2001-04-17 International Business Machines Corporation Module with metal-ion matrix induced dendrites for interconnection
JP3653227B2 (ja) * 2000-05-30 2005-05-25 三菱電機株式会社 半導体装置およびその製造方法並びにこれに用いる半導体チップ接着用フィルム

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8570470B2 (en) 2008-08-20 2013-10-29 Lg Chem, Ltd. Adhesive agent
US8704982B2 (en) 2008-08-20 2014-04-22 Lg Chem, Ltd. Adhesive agent
TWI448523B (zh) * 2008-08-20 2014-08-11 Lg Chemical Ltd 壓敏性黏著劑，其製備方法，偏光板及液晶顯示器
US9019463B2 (en) 2008-08-20 2015-04-28 Lg Chem, Ltd. Adhesive agent
US11195813B2 (en) 2014-02-04 2021-12-07 Dexerials Corporation Anisotropic conductive film and production method of the same

Also Published As

Publication number Publication date
JP2005243950A (ja) 2005-09-08
US20070068622A1 (en) 2007-03-29
TW200528531A (en) 2005-09-01
KR101086182B1 (ko) 2011-11-25
JP4385794B2 (ja) 2009-12-16
KR20060126574A (ko) 2006-12-07
CN1926675A (zh) 2007-03-07
WO2005083772A1 (ja) 2005-09-09
CN1926675B (zh) 2012-07-04
HK1103169A1 (en) 2007-12-14
US7655107B2 (en) 2010-02-02

Similar Documents

Publication Publication Date Title
TWI274780B (en) Anisotropic conduction connecting method and anisotropic conduction adhesive film
JP5226562B2 (ja) 異方性導電フィルム、並びに、接合体及びその製造方法
TWI250199B (en) Adhesive, electrode-connecting structure, and method of connecting electrodes
TWI557208B (zh) An anisotropic conductive film, an anisotropic conductive film manufacturing method, a method for manufacturing a connecting body, and a connecting method
KR100780136B1 (ko) 접착제조성물
KR20090092796A (ko) 이방성 도전막 및 그 제조방법과 접합체
TWI688176B (zh) 連接體之製造方法、電子零件之連接方法、連接體
JP2014096531A (ja) 接続構造体の製造方法及び接続方法
WO2011152421A1 (ja) 異方性導電膜及びその製造方法
KR20210141953A (ko) 회로 접속용 접착제 필름 및 그 제조 방법, 회로 접속 구조체의 제조 방법, 및, 접착제 필름 수용 세트
KR20190087365A (ko) 실장체의 제조 방법, 접속 방법 및 이방성 도전막
JP2015167187A (ja) 電子部品の製造方法及び電子部品の中間体
WO2022009846A1 (ja) 回路接続用接着剤フィルム、並びに回路接続構造体及びその製造方法
TWI540195B (zh) A circuit connecting material and a connecting method using the same, and a connecting structure
TWI648156B (zh) 異向性導電膜及其製造方法
JP6302336B2 (ja) 光硬化性導電材料用導電性粒子、光硬化性導電材料、接続構造体の製造方法及び接続構造体
TWI627639B (zh) Electrical connecting material and manufacturing method thereof, and connecting body
JP4075409B2 (ja) 接着フィルム及びそれを用いた電極の接続構造
WO2020071271A1 (ja) 異方性導電フィルム、接続構造体、接続構造体の製造方法
KR20160117456A (ko) 이방성 도전 필름 및 그의 제조 방법
JP4032320B2 (ja) 電極の接続方法
TW202244219A (zh) 電路連接用接著劑薄膜、以及電路連接結構體及其製造方法
TW202212519A (zh) 電路連接用接著劑膜、含無機填料組成物、以及電路連接結構體及其製造方法
KR20210141954A (ko) 회로 접속용 접착제 필름 및 그 제조 방법, 회로 접속 구조체의 제조 방법, 및, 접착제 필름 수용 세트
JP2020186327A (ja) 接着フィルムの製造方法、接着フィルム、及び接続体の製造方法