WO2005083772A1 - 異方性導電接続方法及び異方性導電接着フィルム - Google Patents

異方性導電接続方法及び異方性導電接着フィルム Download PDF

Info

Publication number
WO2005083772A1
WO2005083772A1 PCT/JP2004/014330 JP2004014330W WO2005083772A1 WO 2005083772 A1 WO2005083772 A1 WO 2005083772A1 JP 2004014330 W JP2004014330 W JP 2004014330W WO 2005083772 A1 WO2005083772 A1 WO 2005083772A1
Authority
WO
WIPO (PCT)
Prior art keywords
anisotropic conductive
adhesive film
conductive adhesive
circuit board
connection
Prior art date
Application number
PCT/JP2004/014330
Other languages
English (en)
French (fr)
Inventor
Misao Konishi
Original Assignee
Sony Chemicals Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Chemicals Corp. filed Critical Sony Chemicals Corp.
Priority to CN200480041972XA priority Critical patent/CN1926675B/zh
Priority to US10/557,883 priority patent/US7655107B2/en
Priority to KR1020067017138A priority patent/KR101086182B1/ko
Publication of WO2005083772A1 publication Critical patent/WO2005083772A1/ja
Priority to HK07107556.4A priority patent/HK1103169A1/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/27011Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009Pre-treatment of the layer connector or the bonding area
    • H01L2224/83051Forming additional members, e.g. dam structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83859Localised curing of parts of the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01024Chromium [Cr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0548Masks
    • H05K2203/056Using an artwork, i.e. a photomask for exposing photosensitive layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0073Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0082Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks

Definitions

  • the present invention relates to a method for electrically connecting a connection terminal of a circuit board and a connection portion of an electronic element, and an anisotropic conductive adhesive film used in the method.
  • thermosetting resin Conventionally, as shown in FIG. 4 (a), conductive particles 41 are connected to thermosetting resin by connecting connection terminals of a circuit board and connection portions of electronic elements such as other circuit boards and IC chips.
  • the connection is made using an anisotropic conductive adhesive film 43 dispersed in 42.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2000-104033
  • the present invention provides anisotropic conductive connection between a connection terminal of a circuit board and a connection portion of an electronic element using an anisotropic conductive adhesive film, while improving the trapping property of conductive particles, and improving the performance during compression bonding.
  • An object of the present invention is to ensure the fluidity of the entire anisotropic conductive adhesive film so as not to increase the pressure, and to enable the circuit board and the electronic element to be temporarily bonded to each other with sufficient strength.
  • the present inventors have used a photocurable insulating resin as an insulating adhesive used for an anisotropic conductive adhesive film, and have used an anisotropic resin on a connection terminal of a circuit board or around a connection terminal.
  • the conductive adhesive film is irradiated with light, the circuit board and the electronic element are temporarily bonded to each other with sufficient strength, and the overall fluidity is secured during the anisotropic conductive connection, while being on or off the connection terminal. It is possible to increase the melt viscosity of the anisotropic conductive adhesive film on the periphery of the terminal, and as a result, it is possible to improve the trapping property of the conductive particles at the anisotropic connection site without increasing the pressure during crimping. And completed the present invention.
  • the present invention relates to a method for anisotropically connecting a connection terminal of a circuit board and a connection portion of an electronic element, the method comprising the following steps (a) to (d):
  • Step (b) arranging an exposure mask having an exposure pattern corresponding to the connection terminal of the circuit board on the anisotropic conductive adhesive film;
  • the present invention provides a method for anisotropically conducting connection between a connection terminal of a circuit board and a connection portion of an electronic element, comprising the following steps ()-(d / ):
  • Step () Anisotropic conductive adhesive layer in which conductive particles are dispersed in a photocurable insulating adhesive on a circuit board and a laminated anisotropic layer in which a thermosetting adhesive layer is provided on at least one surface Disposing a conductive adhesive film;
  • Step (c) irradiating the laminated anisotropic conductive adhesive film with light through an exposure mask, and irradiating the photocurable anisotropic conductive adhesive layer of the laminated anisotropic conductive adhesive film with light. Photo-polymerizing the exposed portion to increase its melt viscosity;
  • Step) Remove the exposure mask, align the connecting part of the electronic element on the side of the laminated anisotropic conductive adhesive film with the connecting terminal of the circuit board, and bring them into close contact with each other.
  • At least a thermosetting adhesive The step of connecting the connection terminals of the circuit board and the connection parts of the electronic element by curing the layer
  • An anisotropic conductive connection method comprising:
  • an anisotropic conductive adhesive film comprising an anisotropic conductive adhesive layer in which conductive particles are dispersed in a photocurable insulating adhesive.
  • an anisotropic conductive adhesive film characterized in that regions having different melt viscosities are provided in an anisotropic conductive adhesive layer of an anisotropic conductive adhesive film according to an isotropic conductive connection pattern.
  • the conductive particles are trapped. While improving, it secures the overall fluidity during anisotropic conductive connection, does not increase the pressure at the time of crimping, and can bond the circuit board and the electronic element with sufficient strength to each other. .
  • FIG. 1 is an explanatory diagram showing steps of an anisotropic conductive connection method according to the present invention.
  • FIG. 2 is an explanatory view showing steps of the anisotropic conductive connection method of the present invention.
  • FIG. 3 is a cross-sectional view of the anisotropic conductive adhesive film of the present invention.
  • FIG. 4 is a cross-sectional view of a conventional anisotropic conductive adhesive film.
  • a photocurable anisotropic conductive adhesive film 4 in which conductive particles 2 are dispersed in a photocurable insulating adhesive 3 is disposed on a circuit board 1.
  • circuit board 1 a flexible printed wiring board (Japanese Patent Application Laid-Open No. 11-013654, etc.), a relay board for a semiconductor device (Japanese Patent Application Laid-Open No. 11-097101, etc.), and a wiring circuit board with bumps (Japanese Patent Application Laid-Open No. 2000-303745)
  • circuit boards such as a ceramic wiring circuit board and a multilayer wiring circuit board using a pre-predder can be used, but basically, an insulating substrate la such as a polyimide film or an alumina plate can be used.
  • a wiring circuit (not shown) in which a metal foil such as a copper foil is patterned is formed, and other electronic elements (for example, a flexible wiring board, an IC chip, an antenna element, a capacitor element) are formed at an end of the wiring circuit. And a connection element lb for connection to a resistor element or the like are used. A well-known insulating cover coat layer lc may be formed between the terminals.
  • conductive particles constituting the photocurable anisotropic conductive adhesive film 4 known conductive particles used in the anisotropic conductive adhesive film can be used.
  • particles of various metals and metal alloys such as nickel, iron, copper, aluminum, tin, lead, chromium, conoreto, silver, gold, metal oxides, carbon, graphite, glass, ceramics, plastics, etc.
  • Particles coated with metal on the surface, or particles coated with an insulating thin film on the surface can be used.
  • the particle size and material of these conductive particles can be appropriately selected according to the wiring pitch and pattern of the circuit board to be connected, the thickness and material of the connection terminal, and the like.
  • the photocurable insulating adhesive 3 constituting the photocurable anisotropic conductive adhesive film 4 there is a known radical polymerization type.
  • the “light” include active energy rays such as ultraviolet rays, electron beams, and X-rays.
  • the adhesive component of the photocurable adhesive includes, for example, a photopolymerizable acryl-based compound, preferably an acrylic monomer or oligomer having a molecular weight (weight average molecular weight) of 10,000 or less.
  • alkyl (meth) acrylate, arylalkyl (meth) acrylate, urethane-modified acrylate, epoxy-modified acrylate and the like are preferable. These can be used alone or in combination of two or more.
  • a photopolymerization initiator that is used in a known photocurable acrylic adhesive can be used.
  • benzophenone-based, acetophenone-based, benzoin, benzoin alkyl ether-based, benzyl, benzyldimethyl ketal, acylphosphine oxide-based, and thioxanthone-based photopolymerization initiators can be exemplified.
  • These photopolymerization initiators can be used alone or in combination. It is noted that an aliphatic amine or an aromatic amine is added as a photopolymerization auxiliary.
  • the amount of the photopolymerization initiator used varies depending on the photocurable adhesive component used.
  • the amount is preferably based on 100 parts by weight of the polymerizable acryl-based compound. 0.1-10 parts by weight.
  • the photo-curing insulating adhesive 3 is prepared by adding the above-described components to a phenolic epoxy resin.
  • a thermoplastic resin such as resin, a crosslinking agent, various rubber components, a filler, a leveling agent, a viscosity modifier, an antioxidant, and the like can be appropriately compounded as required.
  • the photocurable anisotropic conductive adhesive film 4 includes, for example, components constituting the photocurable insulating adhesive 3, conductive particles, a photopolymerization initiator, and other additional components. If necessary, it can be manufactured by uniformly mixing with a solvent such as toluene, coating on a release sheet such as a polyethylene terephthalate (PET) sheet, and drying to form a film.
  • a solvent such as toluene
  • PET polyethylene terephthalate
  • an exposure mask 5 having an exposure pattern corresponding to the connection terminal lb of the circuit board 1 is arranged on the anisotropic conductive adhesive film 4.
  • the exposure pattern of the exposure mask 5 may be a pattern that irradiates the anisotropic conductive adhesive film 4 on the connection terminals lb of the circuit board 1 with light (FIG. L (bl)), or the circuit board. The pattern is such that light is applied to the anisotropic conductive adhesive film 4 around the connection terminal lb of FIG. 1 (FIG. L (b2)).
  • connection terminal lb includes not only a case where the connection terminal lb is surrounded by a circle or a square, but also a case where the connection terminal lb is sandwiched in a line shape or an L-shape.
  • the exposure mask 5 can have the same configuration as a conventionally known exposure mask, except that the exposure mask 5 has an exposure pattern corresponding to the connection terminal lb of the circuit board 1.
  • the anisotropic conductive adhesive film 4 is irradiated with light through the exposure mask 5, and the exposed portion of the anisotropic conductive adhesive film 4 that has been irradiated with light is photopolymerized, and the melt viscosity of the portion is reduced. Increase.
  • the melt viscosity of the exposed portion 4a of the anisotropic conductive adhesive film on the connection terminal lb of the circuit board 1 is reduced. Increase. As a result, the ability of the exposed portion 4a to capture conductive particles can be enhanced.
  • the circuit board 1 and the electronic element can be temporarily bonded to each other with sufficient strength, and the anisotropic conductive connection can be made.
  • the fluidity of the entire anisotropic conductive adhesive film 4 can be secured, and it is not necessary to excessively increase the pressure at the time of pressure bonding.
  • the exposed portion 4a of the anisotropic conductive adhesive film on the periphery of the connection terminal lb of the circuit board 1 is used. Increases melt viscosity. As a result, the melt viscosity of the unexposed portion 4b of the anisotropic conductive adhesive film on the connection terminal is not increased, and therefore, from the viewpoint of the melt viscosity, the conductive particles 2 can easily escape from the connection terminal lb when pressed.
  • the melt viscosity is high around the non-exposed portion 4b, a region is formed, and as a result, the ability to capture the conductive particles in the non-exposed portion 4b can be enhanced. .
  • the circuit board 1 and the electronic element can be temporarily bonded to each other with sufficient strength, and the force can be reduced when the anisotropic conductive connection is made.
  • the fluidity of the entire anisotropic conductive adhesive film 4 can be ensured, and the pressure at the time of pressure bonding can be further reduced as compared with the case of FIG. Therefore, it is suitable for a case where bump connection is performed in a relatively large area.
  • connection portion 6a of the electronic element 6 is aligned with the connection terminal lb of the circuit board 1 from the side of the anisotropic conductive bonding film 4 so that the two are brought into close contact with each other.
  • anisotropic conductive connection between the connection terminal lb of the circuit board 1 and the connection portion of the electronic element can be achieved with good connection reliability.
  • the electronic element 6 include a circuit board similar to the circuit board 1, a flexible wiring board, an IC chip, an antenna element, a capacitor element, a resistance element, and the like.
  • a bump or electrode pad structure can be adopted.
  • the anisotropic conductive connection method according to the first embodiment is different from the first embodiment in that a laminated anisotropic conductive adhesive film having a thermosetting adhesive layer provided on at least one surface is used. It differs from the connection method.
  • a laminated anisotropic conductive adhesive film having a thermosetting adhesive layer provided on at least one surface is used. It differs from the connection method.
  • thermosetting adhesive layer 25 may be located on the circuit board 21 side, although it is arranged so that the 24 is located.
  • a laminated anisotropic conductive adhesive film 26 having thermosetting adhesive layers 25 provided on both surfaces may be used.
  • thermosetting resin constituting the thermosetting adhesive layer 25 examples include epoxy resin, urethane resin, and unsaturated polyester resin. Among them, it is preferable to use an epoxy resin that is solid at room temperature. In this case, an epoxy resin that is liquid at room temperature can be used in combination. The mixing ratio of the liquid epoxy resin to the solid epoxy resin at normal temperature can be appropriately determined according to the required performance of the anisotropic conductive adhesive film. Further, when the degree of flexibility of the film made of the solid or liquid epoxy resin as described above is further improved, and thereby the peel strength of the anisotropic conductive adhesive film is further improved, the epoxy resin may be used. It is particularly preferable to use a flexible epoxy resin in addition to the resin.
  • the content of the flexible epoxy resin in the thermosetting insulating adhesive is too small, the effect of adding the flexible epoxy resin cannot be sufficiently obtained, and when the content is too large, heat resistance is obtained.
  • the content is preferably 5 to 35% by weight, and more preferably 5 to 25% by weight, since the property is lowered.
  • the circuit board 21, the conductive particles 22, and the photocurable insulating adhesive 23 are the same as the circuit board 1, the conductive particles 2, and the photocurable insulating adhesive 3 described with reference to FIG. 1, respectively. Can be used.
  • the laminated anisotropic conductive adhesive film 26 requires, for example, each component constituting the photocurable insulating adhesive 3, conductive particles, a photopolymerization initiator, and other additional components. If necessary, uniformly mix with a solvent such as toluene, apply on a release sheet such as a PET sheet, and dry to form a photocurable anisotropic conductive adhesive film.
  • a solvent such as toluene
  • a release sheet such as a PET sheet
  • FIG. 2 (B1) shows a case where the exposure pattern of the exposure mask 27 is a pattern in which light is applied to the laminated anisotropic conductive adhesive film 26 on the connection terminal 21b of the circuit board 21.
  • FIG. 2 (B2) shows a case where the exposure pattern of the exposure mask 5 is a pattern in which light is irradiated to the laminated anisotropic conductive adhesive film 26 around the connection terminals 21b of the circuit board 21. Shown in
  • the exposure mask 27 may be arranged as in the case of FIG. 2 (A1) (not shown).
  • the laminated anisotropic conductive adhesive film 26 is irradiated with light through the exposure mask 27, and the light irradiated on the anisotropic conductive adhesive layer 24 of the laminated anisotropic conductive adhesive film 26 is exposed.
  • the light portion 24a is photopolymerized to increase the melt viscosity of that portion.
  • the anisotropic conductive adhesive layer of the anisotropic conductive adhesive film 26 on the connection terminal 21b of the circuit board 21 is used.
  • the melt viscosity of the exposed portion 24a increases. As a result, it is possible to enhance the capturing property of the conductive particles 22 in the exposed portion 24a.
  • the circuit board 21 and the electronic element have sufficient strength. It is not necessary to excessively increase the pressure at the time of crimping, since temporary adhesion can be performed at a time and the fluidity of the entire anisotropic conductive adhesive film 26 can be secured at the time of anisotropic conductive connection.
  • the contact terminals 22b can easily escape at the time of crimping on the connection terminals 21b, the regions (dams) having a high melt viscosity are formed around the non-exposed portions 24b.
  • the capture of conductive particles 22 be able to.
  • the circuit board 21 and the electronic element are exchanged. Temporary bonding with sufficient strength to ensure sufficient fluidity of the anisotropic conductive adhesive film 26 during anisotropic conductive connection, and the pressure during crimping is higher than in the case of Fig. L (cl). This makes it possible to reduce the number of bumps, which is suitable for connecting bumps having a relatively large area.
  • connection portion 28a of the electronic element 28 is aligned with the connection terminal 2 lb of the circuit board 21 from the side of the laminated anisotropic conductive adhesive film 26, and the two are adhered at least.
  • the connection terminals 21b of the circuit board 21 and the connection portions 28a of the electronic elements 28 are connected by thermosetting the thermosetting adhesive layer 25.
  • the photocurable anisotropic conductive adhesive layer 24 may be cured by irradiating light.
  • the connection terminal 21b of the circuit board 21 and the connection portion 28a of the electronic element 28 can be anisotropically conductively connected with good connection reliability (FIG. 2 (D)).
  • the electronic element 28 the same element as the electronic element 6 described in FIG. 1D can be used.
  • the anisotropic conductive adhesive film 31 that can be used in the anisotropic conductive connection methods of the first and second aspects of the present invention includes, as shown in FIG. It comprises an anisotropic conductive adhesive layer dispersed in a curable insulating adhesive 33, and has a region where the melt viscosity differs in the anisotropic conductive adhesive film 31 according to the anisotropic conductive connection pattern. That is, the melt viscosity is relatively high! ⁇ Area X and low! ⁇ region Y.
  • the anisotropic conductive connection site is the region X, as described with reference to Fig. 1 (bl) and Fig. 2 (B1), the region X undergoes photopolymerization due to irradiation with light and has a melt viscosity. Corresponds to the exposed portion having increased. Therefore, as described with reference to FIG. 1 (cl) and FIG. 2 (C1), the trapping property of the conductive particles in the region X can be improved.
  • the circuit board and the electronic element can be temporarily bonded to each other with sufficient strength, the fluidity of the entire anisotropic conductive adhesive film can be secured during anisotropic conductive connection, and the pressure during crimping must be excessively increased. Sex is.
  • the region Y is the melt viscosity around the anisotropic conductive contact site. Is a region surrounded by a region X, and as a result, as described in FIG. L (cl) and FIG. Of the conductive particles can be improved.
  • the circuit board and the electronic element can be temporarily bonded to each other with sufficient strength, the fluidity of the entire anisotropic conductive adhesive film can be secured during anisotropic conductive connection, and the pressure during crimping can be reduced as shown in Fig. ) Can be reduced more than in the case of), which is suitable for the case of connecting a relatively large area bump.
  • the anisotropic conductive adhesive film 31 has one surface (FIG. 3B
  • thermosetting adhesive layer 34 can be provided on both sides.
  • the conductive particles 32, the photo-curing insulating adhesive 33, and the thermosetting adhesive layer 34 are respectively composed of the aforementioned conductive particles 2, the photo-curing insulating adhesive 3, and the thermosetting adhesive.
  • the structure can be the same as that of the layer 25.
  • An ultraviolet-curable adhesive composition was prepared by uniformly mixing the components shown in Table 1 with a mixed solvent of toluene and ethyl acetate (weight ratio 1: 1) so that the solid content was 60% by weight.
  • the UV-curable adhesive composition was applied to a peeled polyethylene terephthalate film to a dry thickness of 20 m or 40 m, and dried at 80 ° C for 5 minutes to obtain a photocurable anisotropic conductive film.
  • An adhesive film was produced. The melt viscosity of the film (measured with a rheometer RS 15 0 (Nono over Ke Co.)), the prior UV irradiation is 6.
  • thermosetting adhesive composition was prepared and applied to a polyethylene terephthalate film from which the thermosetting adhesive composition had been peeled off to a dry thickness of 10 m, 20 m or 40 ⁇ m, dried at 80 ° C for 5 minutes and heated. A curable adhesive film was produced. The melt viscosity of the film (measured with Rheometer RS 0.99 (Nono over Ke Co.)) was 6. OX 10 6 mPa 's ( 80 ° C).
  • the photocurable anisotropic conductive adhesive film of Example 1 a single-layer photocurable anisotropic conductive adhesive film having a thickness of 40 ⁇ m was used, and the laminated anisotropic conductive adhesive films of Examples 2 and 3 were used.
  • the conductive adhesive film a 20 ⁇ m-thick photo-curable anisotropic conductive adhesive film with a 20 ⁇ m-thick thermosetting adhesive film laminated on one side by a conventional method was used.
  • Type anisotropy As the conductive conductive adhesive film, a film obtained by laminating a thermosetting adhesive film having a thickness of 10 ⁇ m on both sides of a photocurable anisotropic conductive adhesive film having a thickness of 20 m by a conventional method was used.
  • thermosetting anisotropic conductive adhesive film of Comparative Example 1 was prepared by adding the components shown in Table 3 to a mixed solvent of toluene and ethyl acetate (weight ratio: 1: 1) and a solid content of 60% by weight. %, To prepare a thermosetting adhesive composition, and apply the thermosetting adhesive composition to a peeled polyethylene terephthalate film to a dry thickness of 0 ⁇ m. Then, it was dried at 80 ° C. for 5 minutes to produce a thermosetting adhesive film. Melting viscosity of the film (measured with Rheometer RS 0.99 (Haake)) is, 6. 0 X 10 6 mPa ' s (80 ° C) der ivy o
  • thermosetting anisotropic conductive adhesive film of Comparative Example 2 was prepared by adding the components shown in Table 4 to a mixed solvent of toluene and ethyl acetate (weight ratio: 1: 1) with a solid content of 60% by weight. %, To prepare a thermosetting adhesive composition, and apply the thermosetting adhesive composition to a peeled polyethylene terephthalate film to a dry thickness of 0 ⁇ m. Then, it was dried at 80 ° C. for 5 minutes to produce a thermosetting adhesive film. The melt viscosity of this film (measured with a Rheometer RS 150 (Haake)) was 9.0 x 10 7 mPa's (80 ° C).
  • the anisotropic conductive adhesive film of Example 1 was prepared by disposing an anisotropic conductive adhesive film on a test transparent liquid crystal substrate, After irradiating light under the condition of j / cm 2 (320-390 nm), the test circuit board was aligned and thermocompression bonded under the condition of 170 ° C. ⁇ 80 MPa ⁇ 10 sec.
  • the anisotropic conductive adhesive film of Example 2-3 was placed on a transparent liquid crystal substrate for testing. After placing the isotropic conductive adhesive film and irradiating the anisotropic conductive adhesive film on the connection terminals with light under the condition of 200 mJ / cm 2 (320-390 nm), the test transparent liquid crystal substrate is aligned. Thermocompression bonding was performed under the conditions. With respect to the anisotropic conductive adhesive film of Example 2, the photocurable anisotropic conductive adhesive layer on the back side was disposed on the transparent liquid crystal substrate for test.
  • thermosetting anisotropic conductive adhesive film of Comparative Examples 1-2 the anisotropic conductive adhesive film was arranged on a transparent liquid crystal substrate for testing, and the circuit board for testing was further positioned. Then, thermocompression bonding was performed under the conditions of 170 ° C. ⁇ 80 MPa ⁇ 10 sec.
  • ACF anisotropic conductive adhesive film
  • PET polyethylene terephthalate
  • Example 1 As can be seen from Table 5, in the case of Example 1, the anisotropic conductive adhesive film having a single layer of the UV-curable anisotropic conductive adhesive was used, and the adhesive on the connection terminal was used. Since the melt viscosity was increased, the tackiness was good, and the trapping property of the conductive particles was also good. In the case of the second embodiment, as in the case of the first embodiment, the melt viscosity of the adhesive on the connection terminal is increased. However, compared to the case of Example 1, the thermosetting adhesive layer was provided on one side, and the thickness of the ultraviolet-curable anisotropic conductive adhesive layer was reduced to half.
  • the melt viscosity of the adhesive on the connection terminal is increased as in the case of the first embodiment, but compared with the case of the first embodiment, both the thermosetting adhesive layers are provided on both surfaces.
  • the thickness of the UV-curable anisotropic conductive adhesive layer is halved. For this reason, there was no problem in tackiness, and even though the thickness of the ultraviolet-curable anisotropic conductive adhesive layer was halved, it was possible to limit the reduction to 12%, which does not cause a practical problem. .
  • the anisotropic conductive connection method of the present invention when the connection terminal of the circuit board and the connection portion of the electronic element are electrically connected by an anisotropic conductive adhesive or an anisotropic conductive adhesive film.
  • the anisotropic conductive connection method of the present invention is a method suitable for connecting various answering substrates and electronic elements.

Abstract

 回路基板の接続端子と電子素子の接続部とを異方性導電接着フィルムにより電気的に接続する際に、導電粒子の捕捉性を向上させながらも、異方性導電接続の際に全体の流動性を確保し、圧着時の圧力を増大させず、しかも回路基板と電子素子とを互いに十分な強度で仮接着することができるようにする。  回路基板1上に、導電粒子2を含有する光硬化型の異方性導電接着フィルム4を配置し、その異方性導電接着フィルム4上に、回路基板1の接続端子1bに対応した露光パターンを有する露光用マスク5を配置し、露光用マスク5を介してその異方性導電接着フィルム4に光を照射し、その異方性導電接着フィルム4の光が照射された露光部4aを光重合させ、その溶融粘度を増大させ、続いて露光用マスク5を取り去り、回路基板1の接続端子1bに対し、異方性導電接着フィルム4側から電子素子6の接続部6aを位置合わせして両者を密着させ、異方性導電接着フィルム4を光重合させることにより、回路基板1の接続端子1bと電子素子6の接続部6aとを接続する。

Description

明 細 書
異方性導電接続方法及び異方性導電接着フィルム
技術分野
[0001] 本発明は、回路基板の接続端子と電子素子の接続部とを電気的に接続する方法、 及びその方法に使用する異方性導電接着フィルムに関する。
背景技術
[0002] 従来より、回路基板の接続端子と、他の回路基板や ICチップなどの電子素子の接 続部とを、図 4 (a)に示すように、導電粒子 41を熱硬化型榭脂 42に分散させた異方 性導電接着フィルム 43を使用して接続することが行われている。
[0003] ところで、このような異方性導電接着フィルムの接続信頼性を向上させるために、異 方性導電接続の際に回路基板の接続端子と電子素子の接続部との間における導電 粒子の捕捉性を向上させることが求められている。これに対し、図 4 (b)に示すように 、異方性導電接着フィルム 43全体にわたって図 4 (a)の場合に比べて導電粒子数を 増大させたり、あるいは、図 4 (c)に示すように、図 4 (a)の場合と導電粒子数の総量 は変わらな!/、が、導電粒子密度を増大させた薄膜と導電粒子を含有しな!、熱硬化型 接着剤層 44とを積層して異方性導電接着フィルム 43とすることが行われている。
[0004] しかし、図 4 (b)や図 4 (c)に示したような態様では、導電粒子の捕捉性が十分とは 言えず、そのため、特許文献 1の層間絶縁接着剤付フィルムの溶融粘度調整技術を 利用し、榭脂組成を調整して異方性導電接着フィルム全体の溶融粘度を増大させる ことにより、異方性導電接続時の熱圧着の際に接続領域から導電粒子が非接続領 域へ移動することを抑制する試みがなされて 、る。
[0005] 特許文献 1:特開 2000-104033号公報
発明の開示
発明が解決しょうとする課題
[0006] しかし、異方性導電接着フィルム全体の溶融粘度を増大させると、異方性導電接続 の際に全体が流動しに《なるため、圧着時の圧力を増大させる必要が生じ、場合に より回路基板や電子素子が損傷するという問題がある。また、熱圧着前に回路基板と 電子素子とを互いに仮接着する際に、接着力が十分とはいえず、剥がれやズレが生 じゃすいという問題もある。
[0007] 本発明は、回路基板の接続端子と電子素子の接続部とを異方性導電接着フィルム により異方性導電接続する際に、導電粒子の捕捉性を向上させながらも、圧着時の 圧力を増大させないように、異方性導電接着フィルム全体の流動性を確保し、しかも 回路基板と電子素子とを互いに十分な強度で仮接着することができるようにすること を目的とする。
課題を解決するための手段
[0008] 本発明者らは、異方性導電接着フィルムに使用する絶縁性接着剤として、光硬化 型絶縁性榭脂を使用し、回路基板の接続端子上または接続端子の周囲上の異方性 導電接着フィルムに光を照射すると、回路基板と電子素子とを互いに十分な強度で 仮接着し、且つ異方性導電接続の際に全体の流動性を確保しつつ、それぞれ接続 端子上又は接続端子の周囲上の異方性導電接着フィルムの溶融粘度を増大させる ことができ、その結果、圧着時の圧力を増大させずに異方性接続部位の導電粒子の 捕捉性を向上させることができることを見出し、本発明を完成させた。
[0009] 即ち、本発明は、第 1の態様として、回路基板の接続端子と電子素子の接続部とを 異方性導電接続する方法であって、以下の工程 (a)—(d):
工程 (a) 回路基板上に、導電粒子が光硬化型絶縁性接着剤に分散してなる異方 性導電接着フィルムを配置する工程;
工程 (b) 該異方性導電接着フィルム上に、回路基板の接続端子に対応した露光 ノターンを有する露光用マスクを配置する工程;
工程 (c) 露光用マスクを介して該異方性導電接着フィルムに光を照射し、該異方 性導電接着フィルムの光が照射された露光部を光重合させ、その溶融粘度を増大さ せる工程; 及び
工程 (d) 露光用マスクを取り去り、回路基板の接続端子に対し、異方性導電接着 フィルム側カゝら電子素子の接続部を位置合わせして両者を密着させ、異方性導電接 着フィルム全体に光を照射し、全体を光重合させることにより、回路基板の接続端子 と電子素子の接続部とを接続する工程 を含む異方性導電接続方法を提供する。
[0010] また、本発明は、第 2の態様として、回路基板の接続端子と電子素子の接続部とを 異方性導電接続する方法であって、以下の工程 ( ) - (d/ ) :
工程 ( ) 回路基板上に、導電粒子が光硬化型絶縁性接着剤に分散してなる異 方性導電接着剤層とその少なくとも片面に熱硬化型接着剤層が設けられた積層型 異方性導電接着フィルムを配置する工程;
工程 (b' ) 積層型異方性導電接着フィルム上に、回路基板の接続端子に対応し た露光パターンを有する露光用マスクを配置する工程;
工程 (c, ) 露光用マスクを介して該積層型異方性導電接着フィルムに光を照射し 、積層型異方性導電接着フィルムの光硬化型異方性導電接着剤層の光が照射され た露光部を光重合させ、その溶融粘度を増大させる工程; 及び
工程 ) 露光用マスクを取り去り、回路基板の接続端子に対し積層型異方性導 電接着フィルム側カゝら電子素子の接続部を位置合わせして両者を密着させ、少なく とも熱硬化型接着剤層を硬化させることにより、回路基板の接続端子と電子素子の接 続部とを接続する工程
を含む異方性導電接続方法を提供する。
[0011] 更に、本発明は、第 3の態様として、導電粒子が光硬化型絶縁性接着剤に分散し てなる異方性導電接着剤層からなる異方性導電接着フィルムであって、異方性導電 接続パターンに応じて、異方性導電接着フィルムの異方性導電接着剤層中に溶融 粘度が異なる領域が設けられていることを特徴とする異方性導電接着フィルムを提供 する。
発明の効果
[0012] 本発明によれば、回路基板の接続端子と電子素子の接続部とを異方性導電接着 剤又は異方性導電接着フィルムにより電気的に接続する際に、導電粒子の捕捉性を 向上させながらも、異方性導電接続の際に全体の流動性を確保し、圧着時の圧力を 増大させず、し力も回路基板と電子素子とを互いに十分な強度で接着することができ る。
図面の簡単な説明 [0013] [図 1]図 1は本発明の異方性導電接続方法の工程説明図である。
[図 2]図 2は本発明の異方性導電接続方法の工程説明図である。
[図 3]図 3は本発明の異方性導電接着フィルムの断面図である。
[図 4]図 4は従来の異方性導電接着フィルムの断面図である。
符号の説明
[0014] 1, 21 回路基板
lb, 21b 接続端子
2, 22 導電粒子
3, 33 光硬化型絶縁性接着剤
4, 26 異方性導電接着フィルム
24 光硬化型の異方性導電接着剤層
4a, 24a 露光部
4b, 24b 非露光部
発明を実施するための最良の形態
[0015] 本発明の第 1の態様の、回路基板の接続端子と電子素子の接続部とを異方性導電 接続する方法について、図 1を参照しながら工程毎に説明する。
[0016] 工程(a)
図 1 (a)に示すように、回路基板 1上に、導電粒子 2が光硬化型絶縁性接着剤 3に 分散してなる光硬化型の異方性導電接着フィルム 4を配置する。
[0017] 回路基板 1としては、フレキシブルプリント配線基板 (特開平 11-013654号公報等 )、半導体装置用中継基板 (特開平 11 097101号公報等)、バンプ付き配線回路 基板 (特開 2000— 303745号公報等)、セラミック配線回路基板、プリプレダを使用 する多層配線回路基板などの公知の回路基板を使用することができるが、基本的に は、ポリイミドフィルムやアルミナ板などの絶縁性基板 la上に銅箔等の金属箔をパタ 一ユングした配線回路(図示せず)が形成され、配線回路の端部には、他の電子素 子 (例えば、フレキシブル配線基板、 ICチップ、アンテナ素子、コンデンサ素子、抵 抗素子等)と接続するための接続端子 lbが形成された構造を有するものを使用する 。端子間には公知の絶縁性のカバーコート層 lcを形成してもよ 、。 [0018] 光硬化型の異方性導電接着フィルム 4を構成する導電粒子としては、異方性導電 接着フィルムにおいて使用されている公知の導電粒子を使用することができる。例え ば、ニッケル、鉄、銅、アルミニウム、錫、鉛、クロム、コノ レト、銀、金など各種金属や 金属合金の粒子、金属酸化物、カーボン、グラフアイト、ガラスやセラミック、プラスチ ック等の粒子の表面に金属をコートしたもの、あるいはこれらの粒子の表面に更に絶 縁薄膜をコートしたもの等を使用することができる。これらの導電粒子の粒径や材質 については、接続すべき回路基板の配線ピッチやパターン、接続端子の厚みや材質 等に応じて適宜選択できる。
[0019] 光硬化型の異方性導電接着フィルム 4を構成する光硬化型絶縁性接着剤 3として は、公知のラジカル重合型ある ヽはカチオン重合型の光硬化型接着剤を使用するこ とができる。ここで、「光」としては、紫外線、電子線、 X線などの活性エネルギー線な どが挙げられる。また、光硬化型接着剤の接着成分としては、例えば、光重合性ァク リル系化合物、好ましくは、分子量 (重量平均分子量) 10000以下のアクリル系モノ マーもしくはオリゴマーが挙げられる。特に、(メタ)アクリル酸アルキルエステル、(メタ )アクリル酸ァリールアルキルエステル、ウレタン変性アタリレート、エポキシ変性アタリ レート等が好ましく挙げられる。これらは、単独で、あるいは 2種以上を併用することも できる。
[0020] 光硬化型絶縁性接着剤 3には、光重合開始剤として、公知の光硬化型アクリル系 接着剤において使用されているものを使用することができる。例えば、ベンゾフエノン 系、ァセトフエノン系、ベンゾイン、ベンゾインアルキルエーテル系、ベンジル、ベンジ ルジメチルケタール、ァシルホスフィンオキサイド系、チォキサントン系の各光重合開 始剤を挙げることができる。これらの光重合開始剤は単独で、あるいは組み合わせて 使用することができる。なお、脂肪族ァミンや芳香族ァミンを光重合助剤として添加す ることちでさる。
[0021] 光重合開始剤の使用量は、使用する光硬化型接着成分により異なるが、重合性ァ クリル系化合物を使用した場合には、重合性アクリル系化合物 100重量部に対して、 好ましくは 0. 1— 10重量部である。
[0022] 光硬化型絶縁性接着剤 3には、上述した成分にカ卩えて、フエノキシ榭脂ゃエポキシ 榭脂などの熱可塑性榭脂、架橋剤、各種ゴム成分、フイラ、レべリング剤、粘度調整 剤、酸ィ匕防止剤等を必要に応じて適宜配合することができる。
[0023] 光硬化型の異方性導電接着フィルム 4は、例えば、光硬化型絶縁性接着剤 3を構 成する各成分と、導電粒子と、光重合開始剤と、その他の添加成分とを必要に応じて トルエンなどの溶媒と共に均一に混合し、ポリエチレンテレフタレート(PET)シートな どの剥離シート上に塗布し、乾燥してフィルム化することにより製造できる。
[0024] 工程 (b)
次に、図 l (bl)または (b2)に示すように、異方性導電接着フィルム 4の上に、回路 基板 1の接続端子 lbに対応した露光パターンを有する露光用マスク 5を配置する。こ の場合、露光用マスク 5の露光パターンは、回路基板 1の接続端子 lb上の異方性導 電接着フィルム 4に光が照射されるようなパターン(図 l (bl) )、または回路基板 1の 接続端子 lbの周囲の異方性導電接着フィルム 4に光が照射されるようなパターン(図 l (b2) )である。ここで、接続端子 lbの周囲とは、接続端子 lbを円や正方形で囲った 場合だけでなぐライン状に挟んだ場合や L字型に囲った場合も含む。
[0025] なお、露光用マスク 5は、回路基板 1の接続端子 lbに対応した露光パターンを有す る以外は、従来公知の露光用マスクと同じ構成とすることができる。
[0026] 工程(c)
次に、露光用マスク 5を介して異方性導電接着フィルム 4に光を照射し、異方性導 電接着フィルム 4の光が照射された露光部を光重合させ、その部分の溶融粘度を増 大させる。ここで、図 l (bl)の露光パターンの場合には、図 l (cl)に示すように、回 路基板 1の接続端子 lb上の異方性導電接着フィルムの露光部 4aの溶融粘度が高ま る。この結果、その露光部 4aにおける導電粒子の捕捉性を高めることができる。しか も、異方性導電接着フィルム 4の非露光部では光重合反応が進行して ヽな 、ので、 回路基板 1と電子素子とを互いに十分な強度で仮接着でき、しかも異方性導電接続 の際に異方性導電接着フィルム 4全体の流動性を確保でき、圧着時の圧力を過度に 上げる必要性がなくなる。
[0027] また、図 l (b2)の露光パターンの場合には、図 l (c2)に示すように、回路基板 1の 接続端子 lbの周囲上の異方性導電接着フィルムの露光部 4aの溶融粘度が高まる。 この結果、接続端子上の異方性導電接着フィルムの非露光部 4bの溶融粘度は高く なっておらず、従って溶融粘度の点からは導電粒子 2が接続端子 lb上力 圧着時に 逃げ易くなつて 、るが、その非露光部 4bの周囲には溶融粘度の高!、領域が形成さ れているために、結果的に、その非露光部 4bにおける導電粒子の捕捉性を高めるこ とができる。しかも、異方性導電接着フィルム 4の非露光部では光重合反応が進行し ていないので、回路基板 1と電子素子とを互いに十分な強度で仮接着でき、し力も異 方性導電接続の際に異方性導電接着フィルム 4全体の流動性を確保でき、圧着時 の圧力を図 l (cl)の場合に比べて、より低減させることが可能となる。よって、比較的 大面積でバンプ接続する場合に適したものとなる。
[0028] 工程(d)
次に、露光用マスク 5を取り去り、回路基板 1の接続端子 lbに対し、異方性導電接 着フィルム 4側から電子素子 6の接続部 6aを位置合わせして両者を密着させ、異方 性導電接着フィルム 4全体に光を照射して全体を光重合させることにより、回路基板 1の接続端子 lbと電子素子の接続部とを、良好な接続信頼性で異方性導電接続す ることができる(図 l (d) )。ここで、電子素子 6としては、回路基板 1と同様な回路基板 やフレキシブル配線基板、 ICチップ、アンテナ素子、コンデンサ素子、抵抗素子等を 挙げることができ、またその接続部 6aとしては、公知のバンプや電極パッド構造を取 ることがでさる。
[0029] 次に、本発明の第 2の態様の異方性導電接続方法について、図 2を参照しながら 工程毎に説明する。なお、第 2の態様の異方性導電接続方法では、少なくとも片面 に熱硬化型接着層が設けられた積層型異方性導電接着フィルムを使用する点で、 第 1の態様の異方性導電接続方法と相違する。このような積層型異方性導電接着フ イルムを使用することにより、図 4 (c)に関して説明したように、導電粒子を含有する層 の厚さを薄くして導電粒子密度を高めることができ、導電粒子の総量を増大させずに 、良好な接続信頼性を実現することが可能となり、結果的に異方性接続コストを低減 することち可會となる。
[0030] 工程(a' )
まず、図 2 (A1)または図 2 (A2)に示すように、回路基板 21上に、導電粒子 22が光 硬化型絶縁性接着剤 23に分散してなる光硬化型の異方性導電接着剤層 24とその 少なくとも片面に熱硬化型接着剤層 25が設けられた積層型異方性導電接着フィル ム 26を配置する。ここで、図 2 (A1)の場合には、片面に熱硬化型接着剤層 25が設 けられた積層型異方性導電接着フィルム 26を、回路基板 21側に異方性導電接着剤 層 24が位置するように配置されているが、回路基板 21側に熱硬化型接着剤層 25が 位置するようにしてもよい。また、図 2 (A2)の場合のように、両面に熱硬化型接着剤 層 25が設けられた積層型異方性導電接着フィルム 26を使用してもよい。
[0031] 熱硬化型接着剤層 25を構成する熱硬化型榭脂としては、エポキシ榭脂、ウレタン 榭脂、不飽和ポリエステル榭脂などを挙げることができる。中でも、常温で固体のェポ キシ榭脂を使用することが好ましい。この場合、常温で液状のエポキシ榭脂を併用す ることもできる。常温で固形のエポキシ榭脂に対する液状のエポキシ榭脂の配合比 率は、異方性導電接着フィルムに対する要求性能に応じて適宜決定することができ る。更に、以上のような固形もしくは液状のエポキシ榭脂からなるフィルムの可撓性の 程度をより向上させ、それにより異方性導電接着フィルムのピール強度もより向上さ せる場合には、それらのエポキシ榭脂に加えて更に可撓性エポキシ榭脂を併用する ことが特に好ましい。この場合、熱硬化性絶縁性接着剤中の可撓性エポキシ榭脂の 含有量は、少な過ぎる場合には可撓性エポキシ榭脂の添加効果が十分に得られず 、多過ぎる場合には耐熱性が低下するので、好ましくは 5— 35重量%、より好ましくは 5— 25重量%である。
[0032] なお、回路基板 21、導電粒子 22および光硬化型絶縁性接着剤 23は、図 1に関し て説明した回路基板 1、導電粒子 2および光硬化型絶縁性接着剤 3とそれぞれ同様 のものを使用することができる。
[0033] 積層型異方性導電接着フィルム 26は、例えば、光硬化型絶縁性接着剤 3を構成す る各成分と、導電粒子と、光重合開始剤と、その他の添加成分とを必要に応じてトル ェンなどの溶媒と共に均一に混合し、 PETシートなどの剥離シート上に塗布し、乾燥 することにより光硬化型の異方性導電接着フィルムを作成し、一方、熱硬化性榭脂を キャスト法やダイ押出法等によりフィルム化し、両フィルムを公知のラミネート法により 積層すること〖こより作成することができる。 [0034] 工程 ( )
次に、図 2 (A1)に示した積層型異方性導電接着フィルム 26上に、回路基板 21の 接続端子 21bに対応した露光パターンを有する露光用マスク 27を配置する。このェ 程は、図 1の態様における工程 (b)と同じ操作となる。ここで、露光用マスク 27の露光 ノ ターンが、回路基板 21の接続端子 21b上の積層型異方性導電接着フィルム 26に 光が照射されるようなパターンの場合を図 2 (B1)に示し、露光用マスク 5の露光バタ ーンが、回路基板 21の接続端子 21bの周囲上の積層型異方性導電接着フィルム 2 6に光が照射されるようなパターンの場合を図 2 (B2)に示す。
[0035] なお、図 2 (A2)の場合も、図 2 (A1)の場合と同様に露光用マスク 27を配置すれば よい(図示せず)。
[0036] 工程( )
次に、露光用マスク 27を介して積層型異方性導電接着フィルム 26に光を照射し、 積層型異方性導電接着フィルム 26の異方性導電接着剤層 24の光が照射された露 光部 24aを光重合させ、その部分の溶融粘度を増大させる。ここで、図 2 (B1)の露光 ノターンの場合には、図 2 (C1)に示すように、回路基板 21の接続端子 21b上の異 方性導電接着フィルム 26の異方性導電接着剤層 24の露光部 24aの溶融粘度が高 まる。この結果、その露光部 24aにおける導電粒子 22の捕捉性を高めることができる 。しカゝも、異方性導電接着フィルム 26の異方性導電接着剤層 24の非露光部 24bで は光重合反応が進行していないので、回路基板 21と電子素子とを互いに十分な強 度で仮接着でき、しかも異方性導電接続の際に異方性導電接着フィルム 26全体の 流動性を確保できるので、圧着時の圧力を過度に挙げる必要性はな 、。
[0037] また、図 2 (B2)の露光パターンの場合には、図 2 (C2)に示すように、回路基板 21 の接続端子 21bの周囲上の異方性導電接着フィルム 26の異方性導電接着剤層 24 の露光部 24aの溶融粘度が高まる。この結果、接続端子 2 lb上の異方性導電接着フ イルム 26の異方性導電接着剤層 24の非露光部 24bの溶融粘度は高くなつておらず 、従って溶融粘度の点力 は導電粒子 22が接続端子 21b上力 圧着時に逃げ易く なっているが、その非露光部 24bの周囲には溶融粘度の高い領域 (ダム)が形成され ているために、結果的に、その非露光部 24bにおける導電粒子 22の捕捉性を高める ことができる。しカゝも、異方性導電接着フィルム 26の異方性導電接着剤層 24の非露 光部 24bでは光重合反応が進行して ヽな 、ので、回路基板 21と電子素子とを互 ヽ に十分な強度で仮接着でき、しかも異方性導電接続の際に異方性導電接着フィルム 26全体の流動性を確保でき、圧着時の圧力を図 l (cl)の場合に比べて、より低減さ せることが可能となり、比較的大面積のバンプ接続する場合に適したものとなる。
[0038] 工程 )
次に、露光用マスク 27を取り去り、回路基板 21の接続端子 2 lbに対し積層型異方 性導電接着フィルム 26側から電子素子 28の接続部 28aを位置合わせして両者を密 着させ、少なくとも熱硬化型接着剤層 25を熱硬化させることにより、回路基板 21の接 続端子 21bと電子素子 28の接続部 28aとを接続する。この場合、光硬化型の異方性 導電接着剤層 24に光を照射して硬化させてもよい。このようにして、回路基板 21の 接続端子 21bと電子素子 28の接続部 28aとを、良好な接続信頼性で異方性導電接 続することができる(図 2 (D) )。ここで、電子素子 28としては、図 1 (d)で説明した電 子素子 6と同様なものを使用できる。
[0039] 以上の本発明の第 1及び第 2の態様の異方性導電接続方法において使用し得る 異方性導電接着フィルム 31は、図 3 (a)に示すように、導電粒子 32が光硬化型絶縁 性接着剤 33に分散してなる異方性導電接着剤層からなるものであり、異方性導電接 続パターンに応じて、異方性導電接着フィルム 31中に溶融粘度が異なる領域、即ち 、相対的に溶融粘度が高!ヽ領域 Xと低!ヽ領域 Yとを有する。
[0040] 異方性導電接続部位が領域 Xである場合、図 1 (bl)および図 2 (B1)で説明したよ うに、領域 Xは光が照射されることにより光重合を起こして溶融粘度が増大した露光 部に相当する。従って、図 l (cl)および図 2 (C1)で説明したように、領域 Xにおいて 導電粒子の捕捉性を高めることができる。また、回路基板と電子素子とを互いに十分 な強度で仮接着でき、しかも異方性導電接続の際に異方性導電接着フィルム全体の 流動性を確保でき、圧着時の圧力を過度に挙げる必要性はな 、。
[0041] また、異方性導電接続部位が領域 Yである場合、図 l (b2)および図 2 (B2)で説明 したように、領域 Yは異方性導電接部位の周囲の溶融粘度の高 、領域 Xで囲まれた 領域であり、図 l (cl)および図 2 (C1)で説明したように、結果的に、その領域 Yにお ける導電粒子の捕捉性を高めることができる。また、回路基板と電子素子とを互いに 十分な強度で仮接着でき、しかも異方性導電接続の際に異方性導電接着フィルム 全体の流動性を確保でき、圧着時の圧力を図 l (cl)の場合に比べて、より低減させ ることが可能となり、比較的大面積のバンプ接続する場合に適したものとなる。
[0042] また、この異方性導電接着フィルム 31には、図 3 (b)に示すように、その片面(図 3 (b
) )または両面に熱硬化型接着剤層 34を設けることができる。
[0043] なお、導電粒子 32、光硬化型絶縁性接着剤 33、熱硬化型接着剤層 34は、それぞ れ前述した導電粒子 2、光硬化型絶縁性接着剤 3、熱硬化型接着剤層 25と同様の 構成とすることができる。
実施例
[0044] 実施例 1一 3、比較例 1一 2
表 1に示す成分を、トルエンと酢酸ェチルの混合溶剤(重量比 1 : 1)に、固形分が 6 0重量%となるように均一に混合することにより紫外線硬化型接着剤組成物を調製し 、その紫外線硬化型接着剤組成物を剥離処理したポリエチレンテレフタレートフィル ムに乾燥厚が 20 mまたは 40 mとなるように塗布し、 80°Cで 5分間乾燥して光硬 化型異方性導電接着フィルムを作製した。このフィルムの溶融粘度(レオメータ RS 15 0 (ノヽーケ社)にて測定)は、紫外線照射前は 6. O X 106mPa' s (80°C)であり、紫外 線照射(200nijZcm2 (320— 390nm) )後は 3. 0 X lO mPa · s (80°C) )であった。
[0045] また、表 2に示す成分を、トルエンと酢酸ェチルの混合溶剤(重量比 1: 1)に、固形 分が 60重量%となるように均一に混合することにより熱硬化型接着剤組成物を調製 し、その熱硬化型接着剤組成物を剥離処理したポリエチレンテレフタレートフィルム に乾燥厚が 10 m、 20 mまたは 40 μ mとなるように塗布し、 80°Cで 5分間乾燥し て熱硬化型接着フィルムを作製した。このフィルムの溶融粘度(レオメータ RS 150 (ノヽ ーケ社)にて測定)は、 6. O X 106mPa' s (80°C)であった。
[0046] 実施例 1の光硬化型の異方性導電接着フィルムとして、 40 μ m厚の単層の光硬化 型異方性導電接着フィルムを使用し、実施例 2及び 3の積層型異方性導電接着フィ ルムとして、 20 μ m厚の光硬化型異方性導電接着フィルムの片面に 20 μ m厚の熱 硬化型接着フィルムを常法によりラミネートしたものを使用し、実施例 3の積層型異方 性導電接着フィルムとして、 20 m厚の光硬化型異方性導電接着フィルムの両面に 10 μ m厚の熱硬化型接着フィルムを常法によりラミネートしたものを使用した。
[0047] また、比較例 1の熱硬化型異方性導電接着フィルムとしては、表 3に示す成分を、ト ルェンと酢酸ェチルの混合溶剤(重量比 1: 1)に、固形分が 60重量%となるように均 一に混合することにより熱硬化型接着剤組成物を調製し、その熱硬化型接着剤組成 物を剥離処理したポリエチレンテレフタレートフィルムに乾燥厚力 0 μ mとなるように 塗布し、 80°Cで 5分間乾燥して熱硬化型接着フィルムを作製した。このフィルムの溶 融粘度(レオメータ RS 150 (ハーケ社)にて測定)は、 6. 0 X 106mPa' s (80°C)であ つた o
[0048] また、比較例 2の熱硬化型異方性導電接着フィルムとしては、表 4に示す成分を、ト ルェンと酢酸ェチルの混合溶剤(重量比 1: 1)に、固形分が 60重量%となるように均 一に混合することにより熱硬化型接着剤組成物を調製し、その熱硬化型接着剤組成 物を剥離処理したポリエチレンテレフタレートフィルムに乾燥厚力 0 μ mとなるように 塗布し、 80°Cで 5分間乾燥して熱硬化型接着フィルムを作製した。このフィルムの溶 融粘度(レオメータ RS 150 (ハーケ社)にて測定)は、 9. 0 X 107mPa' s (80°C)であ つた o
[0049] [表 1]
Figure imgf000014_0001
[0050] [表 2] 成分 室量部 プ iノキシ樹脂(Y P 5 0、 東都化学社製) 1 0 ° 樹脂 (ΗΡ403^ ° 当量 136〜150gieq、大 B本 化学ェ菜社製) 2 0 ° 分散 β ^ ll¾硬化剤 (HX3941HP、旭化 製) 1 5
[0051] [表 3]
Figure imgf000015_0001
[0052] [表 4]
Figure imgf000015_0002
[0053] 作製した各実施例及び比較例の異方性導電接着フィルムにつ 、て、以下に説明 するようにタック性を評価した。また、作製した各実施例及び比較例の異方性導電接 着フィルムを使用して、試験用回路基板と試験用透明液晶基板に対して異方性導電 接続を行った。その際の粒子捕捉数を以下に説明するように測定した。得られた結 果を表 5に示す。
[0054] なお、実施例 1の異方性導電接着フィルムにつ 、ては、試験用透明液晶基板上に 異方性導電接着フィルムを配置し、接続端子上の異方性導電接着フィルムに 200m j/cm2 (320-390nm)という条件で光を照射した後、試験用回路基板を位置合わ せして、 170°C X 80MPa X lOsecという条件で熱圧着した。
[0055] 実施例 2— 3の異方性導電接着フィルムについては、試験用透明液晶基板上に異 方性導電接着フィルムを配置し、接続端子上の異方性導電接着フィルムに 200mJ /cm2 (320-390nm)という条件で光を照射した後、試験用透明液晶基板を位置 合わせして、という条件で熱圧着した。なお、実施例 2の異方性導電接着フィルムに ついては、その裏側の光硬化性異方性導電接着剤層を試験用透明液晶基板側に 配置した。
[0056] また、比較例 1一 2の熱硬化型異方性導電接着フィルムにつ 、ては、試験用透明 液晶基板上に異方性導電接着フィルムを配置し、更に試験用回路基板を位置合わ せして、 170°C X 80MPa X lOsecという条件で熱圧着した。
[0057] タック'!^
ガラス板に ACF (異方性導電接着フィルム) Z剥離処理 PET (ポリエチレンテレフタ レート)を、ホットプレスを用いて、 40°C X 0. 5MPa X 2secという条件で熱圧着し、そ の後、剥離処理 PETを引き剥がし、露出した ACFの状態を観察した。
[0058] (評価基準)
ランク 基準
〇: ACFがガラス上に転着した場合
X: ACFがガラス上に転着しない場合
[0059] 粒子捕捉数
圧着した ICのバンプ (バンプ一個当たりの表面積 = 2500 m2)上に存在する導電 粒子数を顕微鏡にてカウントし、その平均値を粒子捕捉数とした。
[0060] [表 5]
Figure imgf000016_0001
[0061] 表 5から分力ゝるように、実施例 1の場合には、紫外線硬化型異方性導電接着剤単層 の異方性導電接着フィルムを使用し、接続端子上の接着剤の溶融粘度を増大させ ているため、タック性も良好であり、導電粒子の捕捉性も良好であった。実施例 2の場 合には、実施例 1の場合と同様に、接続端子上の接着剤の溶融粘度を増大させてい るが、実施例 1の場合に比べ、片面に熱硬化性接着剤層を設けるともに、紫外線硬 化型異方性導電接着剤層の厚みを半分にしている。このため、タック性に問題はなく 、しかも、紫外線硬化型異方性導電接着剤層の厚みを半分にしたにも関わらず、導 電粒子捕捉数は実用上問題の生じない 4%の低下に止めることができた。実施例 3 の場合、実施例 1の場合と同様に、接続端子上の接着剤の溶融粘度を増大させてい るが、実施例 1の場合に比べ、両面に熱硬化性接着剤層を設けるともに、紫外線硬 化型異方性導電接着剤層の厚みを半分にしている。このため、タック性に問題はなく 、しかも、紫外線硬化型異方性導電接着剤層の厚みを半分にしたにも関わらず、実 用上問題の生じない 12%の低下に止めることができた。
[0062] 一方、比較例 1及び 2の場合には、熱硬化型異方性導電接着剤単層の異方性導 電接着フィルムを使用しているため、導電粒子の捕捉性に問題が認められた。比較 例 2の場合には、タック性に問題が認められた。
産業上の利用可能性
[0063] 本発明の異方性導電接続方法によれば、回路基板の接続端子と電子素子の接続 部とを異方性導電接着剤又は異方性導電接着フィルムにより電気的に接続する際に 、導電粒子の捕捉性を向上させながらも、異方性導電接続の際に全体の流動性を確 保し、圧着時の圧力を増大させず、し力も回路基板と電子素子とを互いに十分な強 度で接着することができる。従って、本発明の異方性導電接続方法は、種々の回答 基板と電子素子とを接続するに適した方法である。

Claims

請求の範囲
[1] 回路基板の接続端子と電子素子の接続部とを異方性導電接続する方法であって、 以下の工程 (a)—(d) :
工程 (a) 回路基板上に、導電粒子が光硬化型絶縁性接着剤に分散してなる異方 性導電接着フィルムを配置する工程;
工程 (b) 該異方性導電接着フィルム上に、回路基板の接続端子に対応した露光 ノターンを有する露光用マスクを配置する工程;
工程 (c) 露光用マスクを介して該異方性導電接着フィルムに光を照射し、該異方 性導電接着フィルムの光が照射された露光部を光重合させ、その溶融粘度を増大さ せる工程; 及び
工程 (d) 露光用マスクを取り去り、回路基板の接続端子に対し、異方性導電接着 フィルム側カゝら電子素子の接続部を位置合わせして両者を密着させ、異方性導電接 着フィルム全体に光を照射し、全体を光重合させることにより、回路基板の接続端子 と電子素子の接続部とを接続する工程
を含む異方性導電接続方法。
[2] 工程 (c)にお ヽて、回路基板の接続端子上の異方性導電接着フィルムに光を照射 する請求項 1記載の異方性導電接続方法。
[3] 工程 (c)において、回路基板の接続端子の周囲上の異方性導電接着フィルムに光 を照射する請求項 1記載の異方性導電接続方法。
[4] 回路基板の接続端子と電子素子の接続部とを異方性導電接続する方法であって、 以下の工程 ( ) - (d ) :
工程 ( ) 回路基板上に、導電粒子が光硬化型絶縁性接着剤に分散してなる異 方性導電接着剤層とその少なくとも片面に熱硬化型接着剤層が設けられた積層型 異方性導電接着フィルムを配置する工程;
工程 (b' ) 積層型異方性導電接着フィルム上に、回路基板の接続端子に対応し た露光パターンを有する露光用マスクを配置する工程;
工程 (c, ) 露光用マスクを介して該積層型異方性導電接着フィルムに光を照射し
、積層型異方性導電接着フィルムの光硬化型異方性導電接着剤層の光が照射され た露光部を光重合させ、その溶融粘度を増大させる工程; 及び
工程 (d' ) 露光用マスクを取り去り、回路基板の接続端子に対し、積層型異方性 導電接着フィルム側カゝら電子素子の接続部を位置合わせして両者を密着させ、少な くとも熱硬化型接着剤層を硬化させることにより、回路基板の接続端子と電子素子の 接続部とを接続する工程
を含む異方性導電接続方法。
[5] 工程 ( )において、回路基板の接続端子上の積層型異方性導電接着フィルムの 異方性導電接着剤層に光を照射する請求項 4記載の異方性導電接続方法。
[6] 工程 ( )にお ヽて、回路基板の接続端子の周囲上の積層型異方性導電接着フ イルムの異方性導電接着剤層に光を照射する請求項 4記載の異方性導電接続方法
[7] 導電粒子が光硬化型絶縁性接着剤に分散してなる異方性導電接着剤層からなる 異方性導電接着フィルムであって、異方性導電接続パターンに応じて、異方性導電 接着フィルムの異方性導電接着剤層中に溶融粘度が異なる領域が設けられて ヽるこ とを特徴とする異方性導電接着フィルム。
[8] 異方性導電接着層の少なくとも片面に熱硬化型接着剤層が形成されている請求項 7記載の異方性導電接着フィルム。
PCT/JP2004/014330 2004-02-26 2004-09-30 異方性導電接続方法及び異方性導電接着フィルム WO2005083772A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200480041972XA CN1926675B (zh) 2004-02-26 2004-09-30 各向异性导电连接方法及各向异性导电粘合膜
US10/557,883 US7655107B2 (en) 2004-02-26 2004-09-30 Method for establishing anisotropic conductive connection and anisotropic conductive adhesive film
KR1020067017138A KR101086182B1 (ko) 2004-02-26 2004-09-30 이방성 도전 접속 방법 및 이방성 도전 접착 필름
HK07107556.4A HK1103169A1 (en) 2004-02-26 2007-07-13 Anisotropic conduction connecting method and anisotropic conduction adhesive film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004-052260 2004-02-26
JP2004052260A JP4385794B2 (ja) 2004-02-26 2004-02-26 異方性導電接続方法

Publications (1)

Publication Number Publication Date
WO2005083772A1 true WO2005083772A1 (ja) 2005-09-09

Family

ID=34908664

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/014330 WO2005083772A1 (ja) 2004-02-26 2004-09-30 異方性導電接続方法及び異方性導電接着フィルム

Country Status (7)

Country Link
US (1) US7655107B2 (ja)
JP (1) JP4385794B2 (ja)
KR (1) KR101086182B1 (ja)
CN (1) CN1926675B (ja)
HK (1) HK1103169A1 (ja)
TW (1) TWI274780B (ja)
WO (1) WO2005083772A1 (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237517A (ja) * 2005-02-28 2006-09-07 Sanyo Electric Co Ltd 回路装置およびその製造方法
KR100608533B1 (ko) 2005-05-13 2006-08-08 쓰리엠 이노베이티브 프로퍼티즈 캄파니 전기 전도성이 우수한 고분자 수지 및 그 제조방법
KR101269741B1 (ko) * 2006-07-04 2013-05-30 쓰리엠 이노베이티브 프로퍼티즈 캄파니 탄성 및 접착성을 갖는 전자기파 차단용 가스켓
KR20080004021A (ko) * 2006-07-04 2008-01-09 쓰리엠 이노베이티브 프로퍼티즈 캄파니 양면의 접착력이 서로 다른 전도성 점착 테이프 및 그제조방법
JP5046581B2 (ja) * 2006-07-28 2012-10-10 旭化成イーマテリアルズ株式会社 回路接続用接着剤
WO2008078478A1 (ja) * 2006-12-27 2008-07-03 Panasonic Corporation 導電性バンプとその形成方法および半導体装置とその製造方法
KR20090067964A (ko) * 2007-12-21 2009-06-25 쓰리엠 이노베이티브 프로퍼티즈 캄파니 점착 테이프 및 그 제조방법
JP4814277B2 (ja) * 2008-04-18 2011-11-16 ソニーケミカル&インフォメーションデバイス株式会社 接合体、該接合体の製造方法、及び該接合体に用いられる異方性導電膜
WO2010021505A2 (ko) * 2008-08-20 2010-02-25 (주)Lg화학 점착제
JP5402109B2 (ja) * 2009-02-27 2014-01-29 デクセリアルズ株式会社 異方性導電フィルム及び発光装置
JP4581016B2 (ja) * 2009-03-25 2010-11-17 株式会社東芝 半導体チップ実装体、半導体チップ実装体の製造方法および電子機器
US20110100709A1 (en) * 2009-10-30 2011-05-05 Dongyan Wang Spd films and light valve laminates with improved bus-bar connections
JP5857383B2 (ja) * 2010-02-26 2016-02-10 エルジー・ケム・リミテッド 粘着剤組成物
JP2010251789A (ja) * 2010-06-22 2010-11-04 Sony Chemical & Information Device Corp 接合体及びその製造方法
KR101332441B1 (ko) * 2010-12-31 2013-11-25 제일모직주식회사 이방 도전성 필름
DE102011057172A1 (de) * 2011-12-29 2013-07-04 Gp Solar Gmbh Verfahren und Vorrichtung zur Herstellung einer Beschichtung auf einem Halbleiterbauelement
TWI454195B (zh) 2012-04-19 2014-09-21 Chunghwa Picture Tubes Ltd 固設半導體晶片於線路基板之方法及其結構
KR102259384B1 (ko) 2012-08-24 2021-06-02 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름의 제조 방법 및 이방성 도전 필름
CN104541411B (zh) 2012-08-24 2018-07-27 迪睿合电子材料有限公司 各向异性导电膜及其制造方法
JP5714631B2 (ja) * 2013-03-26 2015-05-07 富士フイルム株式会社 異方導電性シート及び導通接続方法
TWI722980B (zh) 2014-02-04 2021-04-01 日商迪睿合股份有限公司 異向性導電膜及其製造方法
JP6241326B2 (ja) * 2014-03-07 2017-12-06 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
KR101681410B1 (ko) * 2015-04-20 2016-11-30 삼성전기주식회사 커패시터 부품
CN109904705B (zh) * 2017-12-07 2021-10-08 泰科电子(上海)有限公司 导电端子坯料条的制造方法和导电端子的制造方法
KR102530672B1 (ko) * 2018-07-20 2023-05-08 엘지디스플레이 주식회사 스트레쳐블 표시 장치
KR20210114596A (ko) * 2020-03-10 2021-09-24 삼성디스플레이 주식회사 표시장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000105388A (ja) * 1998-09-30 2000-04-11 Matsushita Electric Ind Co Ltd 液晶表示装置の製造方法、液晶表示装置、および導電性接着フィルム
JP2002057191A (ja) * 2000-05-30 2002-02-22 Mitsubishi Electric Corp 半導体装置およびその製造方法並びにこれに用いる半導体チップ接着用フィルム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2547895B2 (ja) * 1990-03-20 1996-10-23 シャープ株式会社 半導体装置の実装方法
US5187020A (en) * 1990-07-31 1993-02-16 Texas Instruments Incorporated Compliant contact pad
US6189208B1 (en) * 1998-09-11 2001-02-20 Polymer Flip Chip Corp. Flip chip mounting technique
JP2000104033A (ja) 1998-09-30 2000-04-11 Sumitomo Bakelite Co Ltd 多層プリント配線板用層間絶縁接着剤及び多層プリント板の製造方法
US6218629B1 (en) * 1999-01-20 2001-04-17 International Business Machines Corporation Module with metal-ion matrix induced dendrites for interconnection

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000105388A (ja) * 1998-09-30 2000-04-11 Matsushita Electric Ind Co Ltd 液晶表示装置の製造方法、液晶表示装置、および導電性接着フィルム
JP2002057191A (ja) * 2000-05-30 2002-02-22 Mitsubishi Electric Corp 半導体装置およびその製造方法並びにこれに用いる半導体チップ接着用フィルム

Also Published As

Publication number Publication date
CN1926675A (zh) 2007-03-07
JP4385794B2 (ja) 2009-12-16
KR101086182B1 (ko) 2011-11-25
CN1926675B (zh) 2012-07-04
US20070068622A1 (en) 2007-03-29
HK1103169A1 (en) 2007-12-14
US7655107B2 (en) 2010-02-02
TWI274780B (en) 2007-03-01
JP2005243950A (ja) 2005-09-08
KR20060126574A (ko) 2006-12-07
TW200528531A (en) 2005-09-01

Similar Documents

Publication Publication Date Title
WO2005083772A1 (ja) 異方性導電接続方法及び異方性導電接着フィルム
JP2001052778A (ja) 異方導電性接着フィルムおよびその製造方法
TWI688176B (zh) 連接體之製造方法、電子零件之連接方法、連接體
JP2014096531A (ja) 接続構造体の製造方法及び接続方法
TW201803958A (zh) 異向性導電膜、其製造方法及連接結構體
TW201535052A (zh) 異向性導電接著劑、連接體之製造方法及電子零件之連接方法
JP2010232184A (ja) 異方性導電膜及びその製造方法
JP2016136625A (ja) 接続体の製造方法、電子部品の接続方法、接続体
WO2015119090A1 (ja) 異方性導電フィルム及びその製造方法
JP5631654B2 (ja) 実装体の製造方法及び接続方法
JPH1197482A (ja) 電極の接続方法および電極の接続構造
TWI648156B (zh) 異向性導電膜及其製造方法
JP3562615B2 (ja) 異方導電性膜状接続部材およびその製造方法
JP6639874B2 (ja) 光硬化系異方性導電接着剤、接続体の製造方法及び電子部品の接続方法
TWI651195B (zh) 異向性導電膜及其製造方法
JP2002167569A (ja) 接着剤組成物、回路接続用接着剤組成物、接続体及び半導体装置
KR102552788B1 (ko) 이방성 도전 필름 및 그 제조 방법
JP7234032B2 (ja) 接着フィルムの製造方法、接着フィルム、及び接続体の製造方法
JP6370562B2 (ja) 接続体の製造方法、フレキシブル基板の接続方法、接続体及びフレキシブル基板
JP2000174066A (ja) 半導体装置の実装方法
TWI837173B (zh) 連接構造體之製造方法及連接膜
JP4032320B2 (ja) 電極の接続方法
JPH1174313A (ja) 電極の接続方法
JP6177642B2 (ja) 接続フィルム、接続構造体、接続構造体の製造方法、接続方法
WO2020050188A1 (ja) 接続構造体の製造方法および接続フィルム

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2007068622

Country of ref document: US

Ref document number: 10557883

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 200480041972.X

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 1020067017138

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 1020067017138

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 10557883

Country of ref document: US

122 Ep: pct application non-entry in european phase