WO2015119090A1 - 異方性導電フィルム及びその製造方法 - Google Patents

異方性導電フィルム及びその製造方法 Download PDF

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Publication number
WO2015119090A1
WO2015119090A1 PCT/JP2015/052910 JP2015052910W WO2015119090A1 WO 2015119090 A1 WO2015119090 A1 WO 2015119090A1 JP 2015052910 W JP2015052910 W JP 2015052910W WO 2015119090 A1 WO2015119090 A1 WO 2015119090A1
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Prior art keywords
connection layer
layer
resin layer
connection
conductive particles
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PCT/JP2015/052910
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English (en)
French (fr)
Inventor
恭志 阿久津
怜司 塚尾
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デクセリアルズ株式会社
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Priority claimed from JP2014019864A external-priority patent/JP6217422B2/ja
Priority claimed from JP2014019865A external-priority patent/JP6260312B2/ja
Application filed by デクセリアルズ株式会社 filed Critical デクセリアルズ株式会社
Priority to KR1020167021045A priority Critical patent/KR102438704B1/ko
Priority to CN201580007321.7A priority patent/CN105940563B/zh
Priority to US15/115,827 priority patent/US9997486B2/en
Publication of WO2015119090A1 publication Critical patent/WO2015119090A1/ja

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    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads

Definitions

  • the present invention relates to an anisotropic conductive film and a method for producing the same.
  • Anisotropic conductive films are widely used for mounting electronic components such as IC chips, and in recent years, from the viewpoint of application to high-density mounting, improved conduction reliability and insulation, improved mounting conductive particle capture rate
  • Patent Document 1 a two-layer anisotropic conductive film in which conductive particles for anisotropic conductive connection are arranged in a single layer on an insulating adhesive layer has been proposed.
  • conductive particles are arranged uniformly at predetermined intervals by biaxially stretching the transfer layer after conductive particles are arranged in a single layer and closely packed in the transfer layer.
  • the conductive particles on the transfer layer are transferred to an insulating resin layer containing a thermosetting resin and a polymerization initiator, and the transferred conductive particles contain a thermosetting resin.
  • it is manufactured by laminating another insulating resin layer that does not contain a polymerization initiator (Patent Document 1).
  • the anisotropic conductive film having a two-layer structure in Patent Document 1 uses an insulating resin layer that does not contain a polymerization initiator, the conductive particles are evenly arranged at predetermined intervals in a single layer. Nevertheless, a relatively large resin flow is likely to occur in the insulating resin layer that does not contain the polymerization initiator due to heating during anisotropic conductive connection, and the conductive particles also easily flow along the flow. For this reason, problems such as a decrease in the mounting conductive particle capture rate, the occurrence of short circuits, and a decrease in insulation have occurred.
  • the object of the present invention is to solve the above-mentioned problems of the prior art, in a multilayer structure anisotropic conductive film having conductive particles arranged in a single layer, good conduction reliability, good insulation. And good mounting conductive particle capture rate.
  • the present inventors fixed the conductive particles by arranging the conductive particles in a single layer on the photopolymerizable resin layer and then irradiating with ultraviolet rays inclined or irradiating the ultraviolet rays with at least two directions.
  • An anisotropic conductive film obtained by laminating a heat or photocation, anion or radical polymerizable resin layer on a conductive particle that has been made or temporarily fixed and further fixed or temporarily fixed is the above-mentioned present invention. As a result, the present invention has been completed.
  • the first aspect of the present invention is an anisotropic conductive film having a first connection layer and a second connection layer formed on one side thereof,
  • the first connection layer is a photopolymerization resin layer;
  • the second connection layer is a heat or photocation, anion or radical polymerizable resin layer;
  • Conductive particles for anisotropic conductive connection are arranged in a single layer on the one surface of the first connection layer, Regarding the curing rate of the first connection layer, an anisotropic conductive film characterized in that a region having a curing rate lower than the curing rate of one side is present obliquely in the thickness direction of the first connection layer I will provide a.
  • the second aspect of the present invention is an anisotropic conductive film having a first connection layer and a second connection layer formed on one side thereof,
  • the first connection layer is a photopolymerization resin layer;
  • the second connection layer is a heat or photocation, anion or radical polymerizable resin layer;
  • Conductive particles for anisotropic conductive connection are arranged in a single layer on the one surface of the first connection layer,
  • the anisotropic property characterized in that the curing rate of the region relatively close to the other surface of the first connection layer is lower in the region near the conductive particles of the first connection layer than the cure rate of the one surface of the first connection layer.
  • An electrically conductive film is provided.
  • the second connection layer is preferably a thermopolymerizable resin layer using a thermal polymerization initiator that initiates a polymerization reaction by heating, but a photopolymerization initiator that initiates a polymerization reaction by light is used.
  • the photopolymerizable resin layer used may be used.
  • a thermal / photopolymerizable resin layer in which a thermal polymerization initiator and a photopolymerization initiator are used in combination may be used.
  • the second connection layer may be limited to a thermopolymerizable resin layer using a thermal polymerization initiator in production.
  • the anisotropic conductive film of the present invention has a third connection layer having substantially the same configuration as the second connection layer on the other surface of the first connection layer for the purpose of preventing warpage of the joined body such as stress relaxation. It may be. That is, you may have the 3rd connection layer which consists of a heat
  • the third connection layer is preferably a thermopolymerizable resin layer using a thermal polymerization initiator that initiates a polymerization reaction by heating, but photopolymerization using a photopolymerization initiator that initiates a polymerization reaction by light. May be a conductive resin layer.
  • a thermal / photopolymerizable resin layer in which a thermal polymerization initiator and a photopolymerization initiator are used in combination may be used.
  • the third connection layer may be limited to a thermopolymerizable resin layer using a thermal polymerization initiator in production.
  • the present invention also relates to a method for producing the anisotropic conductive film of the first aspect of the present invention described above, wherein the first connection layer is formed by a one-step photopolymerization reaction. C), or a production method comprising steps (AA) to (DD) described later, wherein the first connection layer is formed by a two-step photoradical polymerization reaction.
  • Step (A) Arranging the conductive particles in a single layer on the photopolymerizable resin layer;
  • Process (AA) Arranging the conductive particles in a single layer on the photopolymerizable resin layer;
  • Process (BB) A step of forming a temporary first connection layer in which conductive particles are temporarily fixed on the surface by causing photo-radical polymerization reaction by irradiating the photopolymerizable resin layer in which the conductive particles are arranged with tilting ultraviolet rays;
  • Process (CC) Forming a second connection layer comprising a thermal cation, anion, or radical polymerizable resin layer on the surface of the temporary first connection layer on the conductive particle side;
  • step (DD) A step of forming a first connection layer by subjecting the temporary first connection layer to a photopolymerization reaction by irradiating ultraviolet rays from the side opposite to the second connection layer, and finally curing the temporary first connection layer.
  • the present invention also relates to a method for producing an anisotropic conductive film according to the second aspect of the present invention described above, wherein the first connection layer is formed by a one-step photopolymerization reaction. (C ′) or a production method comprising the steps (AA ′) to (DD ′) described later, wherein the first connection layer is formed by a two-step photopolymerization reaction.
  • Process (A ') Arranging the conductive particles in a single layer on the photopolymerizable resin layer;
  • Process (B ') A step of causing a photopolymerization reaction by irradiating the photopolymerizable resin layer in which the conductive particles are arranged at an inclination from at least two directions to form a first connection layer having the conductive particles fixed on the surface; and
  • Process (C ') The process of forming the 2nd connection layer which consists of a heat
  • step (CC ') Forming a second connection layer comprising a thermal cation, anion, or radical polymerizable resin layer on the surface of the temporary first connection layer on the conductive particle side; and step (DD ′) A step of forming a first connection layer by subjecting the temporary first connection layer to a photopolymerization reaction by irradiating ultraviolet rays from the side opposite to the second connection layer, and finally curing the temporary first connection layer.
  • the initiator used in the formation of the second connection layer in the steps (CC) and (CC ′) is limited to the thermal polymerization initiator, the product life as an anisotropic conductive film, connection and connection structure This is to prevent adverse effects on the stability of the body. That is, in the case where the first connection layer is irradiated with ultraviolet rays in two stages, the second connection layer may be limited to a thermosetting curable one due to restrictions on the process. In addition, when performing two-step irradiation continuously, since it can form by the process substantially the same as one step
  • this invention is a manufacturing method of the anisotropic conductive film which has the 3rd connection layer of the structure similar to a 2nd connection layer in the other surface of a 1st connection layer, Comprising: The above process (A ) To (C) and after the step (C) (or after the step (C ′) in addition to the steps (A ′) to (C ′)), the production method having the following step (Z) Or after the step (DD) in addition to the above steps (AA) to (DD) (or after the step (DD ′) in addition to the steps (AA ′) to (DD ′)), The manufacturing method which has a process (Z) is provided.
  • Step (Z) The process of forming the 3rd connection layer which consists of a heat
  • this invention is a manufacturing method of the anisotropic conductive film which has the 3rd connection layer of the structure substantially the same as the 2nd connection layer on the other surface of the 1st connection layer, Comprising: A manufacturing method having the following step (a) in addition to steps (A) in addition to A) to (C) (or in addition to steps (A ′) in addition to steps (A ′) to (C ′)): Or, in addition to the above steps (AA) to (DD), prior to step (AA) (or prior to step (AA ′) in addition to steps (AA ′) to (DD ′)), the following steps (a ).
  • Step (a) A step of forming a third connection layer comprising a heat or photocation, anion or radical polymerizable resin layer on one surface of the photopolymerizable resin layer.
  • step (A) or step (A ′) or step (AA) or step (AA ′) of the production method having this step (a) a single layer of conductive particles is formed on the other surface of the photopolymerizable resin layer. Can be arranged with.
  • the polymerization initiator is limited to a thermal reaction due to the above-described reason.
  • the second and third connection layers containing the photopolymerization initiator are provided by a method that does not adversely affect the product life and connection after the first connection layer is provided, the photopolymerization initiator containing the photopolymerization initiator can be obtained.
  • the anisotropic conductive film along the gist There is no particular limitation on the production of the anisotropic conductive film along the gist.
  • connection layer or the third connection layer functions as a tack layer
  • the aspect in which either the second connection layer or the third connection layer functions as a tack layer is also included in the present invention.
  • the present invention provides a connection structure in which the first electronic component is anisotropically conductively connected to the second electronic component with the above-described anisotropic conductive film.
  • the anisotropic conductive film of the first aspect and the second aspect of the present invention includes a first connection layer comprising a photopolymerization resin layer, and a heat or photocation, anion or radical polymerizable resin formed on one surface thereof.
  • conductive particles for anisotropic conductive connection are arranged in a single layer on the second connection layer side surface of the first connection layer. For this reason, the conductive particles can be firmly fixed to the first connection layer.
  • the curing rate of the first connection layer is lower than the curing rate of the second connection layer side surface because light irradiation is performed obliquely.
  • a region having a curing rate exists obliquely in the thickness direction of the first connection layer.
  • the region of low curing rate and the direction of flow of the conductive particles can be aligned in the oblique direction, so that a short-circuit can be generated without impairing the initial conduction characteristics and conduction reliability. It can be greatly suppressed.
  • the anisotropic conductive film of the second aspect of the present invention since irradiation with ultraviolet rays is performed at an inclination from at least two directions, the region below (back side) of the conductive particles in the first connection layer is a conductive particle.
  • the curing rate is relatively low.
  • the region below the back (back side) of the conductive particles in the first connection layer exhibits good pushability, and as a result, good conduction reliability, insulation, and mounting conductive particle capture rate can be realized.
  • the region near the conductive particles in the first connection layer refers to a region having a width of 0.2 to 5 times the diameter of the conductive particles surrounding the conductive particles.
  • the region where the curing rate of the first connection layer resin layer is relatively low preferably exists only in the first connection layer. This is to prevent the conductive particles from shifting in directions other than the connecting direction at the time of initial pressing during connection.
  • anisotropic conductive connection uses heat, it becomes the same method as the connection method of a normal anisotropic conductive film.
  • the connection tool may be pushed in until the reaction is completed. Even in this case, the connection tool or the like is often heated to promote resin flow and particle indentation.
  • what is necessary is just to carry out similarly to the above also when using heat and light together.
  • FIG. 1 is a cross-sectional view of the anisotropic conductive film of the first aspect of the present invention.
  • FIG. 2 is an explanatory diagram of a manufacturing step (A) of the anisotropic conductive film according to the first aspect of the present invention.
  • FIG. 3A is an explanatory diagram of the production process (B) of the anisotropic conductive film of the first aspect of the present invention.
  • FIG. 3B is an explanatory diagram of the production process (B) of the anisotropic conductive film of the first aspect of the present invention.
  • FIG. 4A is an explanatory diagram of the production step (C) of the anisotropic conductive film of the first aspect of the present invention.
  • FIG. 4B is an explanatory diagram of the production process (C) of the anisotropic conductive film of the first aspect of the present invention.
  • FIG. 5 is a cross-sectional view of an anisotropic conductive film included in the first embodiment of the present invention.
  • FIG. 6 is an explanatory view of the production process (AA) of the anisotropic conductive film of the present invention.
  • FIG. 7A is an explanatory diagram of the production process (BB) of the anisotropic conductive film of the first aspect of the present invention.
  • FIG. 7B is an explanatory diagram of the production process (BB) of the anisotropic conductive film of the first aspect of the present invention.
  • FIG. 8A is an explanatory diagram of the production process (CC) of the anisotropic conductive film of the first aspect of the present invention.
  • FIG. 8B is an explanatory diagram of the production process (CC) of the anisotropic conductive film of the first aspect of the present invention.
  • FIG. 9A is an explanatory diagram of the production process (DD) of the anisotropic conductive film of the first aspect of the present invention.
  • FIG. 9B is an explanatory diagram of the production process (DD) of the anisotropic conductive film of the first aspect of the present invention.
  • FIG. 10 is a cross-sectional view of the anisotropic conductive film of the second aspect of the present invention.
  • FIG. 11 is explanatory drawing of the manufacturing process (A ') of the anisotropic conductive film of the 2nd aspect of this invention.
  • FIG. 12A is an explanatory diagram of the production process (B ′) of the anisotropic conductive film of the second aspect of the present invention.
  • FIG. 12B is an explanatory diagram of the production process (B ′) of the anisotropic conductive film of the second aspect of the present invention.
  • FIG. 13A is an explanatory diagram of the production process (C ′) of the anisotropic conductive film of the second aspect of the present invention.
  • FIG. 13B is an explanatory diagram of the production process (C ′) of the anisotropic conductive film of the second aspect of the present invention.
  • FIG. 12A is an explanatory diagram of the production process (C ′) of the anisotropic conductive film of the second aspect of the present invention.
  • FIG. 13B is an explanatory diagram of the production process (C ′) of the ani
  • FIG. 14 is a cross-sectional view of the anisotropic conductive film of the second aspect of the present invention.
  • FIG. 15 is an explanatory diagram of an anisotropic conductive film production process (AA ′) according to the second aspect of the present invention.
  • FIG. 16A is an explanatory diagram of the production process (BB ′) of the anisotropic conductive film of the second aspect of the present invention.
  • FIG. 16B is an explanatory diagram of the production process (BB ′) of the anisotropic conductive film of the second aspect of the present invention.
  • FIG. 17A is an explanatory diagram of the production process (CC ′) of the anisotropic conductive film of the second aspect of the present invention.
  • FIG. 17B is explanatory drawing of the manufacturing process (CC ') of the anisotropic conductive film of the 2nd aspect of this invention.
  • FIG. 18A is an explanatory diagram of the production process (DD ′) of the anisotropic conductive film of the second aspect of the present invention.
  • FIG. 18B is an explanatory diagram of the anisotropic conductive film manufacturing process (DD ′) according to the second aspect of the present invention.
  • anisotropic Conductive Film of the present invention ⁇ Anisotropic Conductive Film of the present invention.
  • the anisotropic conductive film 1 of the first aspect of the present invention shown in FIG. 1 and the anisotropic conductive film 1 of the second aspect of the present invention shown in FIG. 10 are obtained by photopolymerizing a photopolymerizable resin layer. It has a structure in which a second connection layer 3 made of a heat or photocation, anion or radical polymerizable resin layer is formed on one surface of the first connection layer 2 made of a polymer resin layer. On the surface 2a of the first connection layer 2 on the second connection layer 3 side, the conductive particles 4 are arranged in a single layer, preferably evenly arranged for anisotropic conductive connection.
  • “equal” means a state in which the conductive particles are arranged in the plane direction. This regularity may be provided at regular intervals.
  • the first connection layer 2 constituting the anisotropic conductive film 1 of the present invention is a photopolymerized resin layer obtained by photopolymerizing a photopolymerizable resin layer such as a photocation, anion or radical polymerizable resin layer, Particles can be immobilized.
  • a photopolymerizable resin layer such as a photocation, anion or radical polymerizable resin layer
  • Particles can be immobilized.
  • it since it is polymerized, it becomes difficult for the resin to flow even when heated at the time of anisotropic conductive connection, so the occurrence of a short circuit can be greatly suppressed, thus improving the conduction reliability and insulation, and the mounting particle capture rate Can also be improved.
  • the particularly preferable first connection layer 2 is a photo radical polymerization resin layer obtained by photo radical polymerization of a photo radical polymerizable resin layer containing an acrylate compound and a photo radical polymerization initiator.
  • the 1st connection layer 2 is a radical photopolymerization resin layer.
  • (Acrylate compound) As the acrylate compound serving as the acrylate unit, a conventionally known photoradical polymerizable acrylate can be used.
  • monofunctional (meth) acrylate here, (meth) acrylate includes acrylate and methacrylate
  • bifunctional or more polyfunctional (meth) acrylate can be used.
  • the amount is preferably 2 to 70% by mass, more preferably 10 to 50% by mass.
  • Photo radical polymerization initiator As a radical photopolymerization initiator, it can be used by appropriately selecting from known radical photopolymerization initiators. Examples include acetophenone photopolymerization initiators, benzyl ketal photopolymerization initiators, and phosphorus photopolymerization initiators.
  • the photo radical polymerization initiator used is too small relative to 100 parts by mass of the acrylate compound, the photo radical polymerization does not proceed sufficiently, and if it is too large, it causes a reduction in rigidity. Part, more preferably 0.5 to 15 parts by weight.
  • the conductive particles can be appropriately selected from those used in conventionally known anisotropic conductive films.
  • metal particles such as nickel, cobalt, silver, copper, gold, and palladium, metal-coated resin particles, and the like can be given. Two or more kinds can be used in combination.
  • the average particle diameter of the conductive particles is too small, the variation in the height of the wiring cannot be absorbed and the resistance tends to be high, and if it is too large, it tends to cause a short circuit. More preferably, it is 2 to 6 ⁇ m.
  • the number is preferably 50 to 50000 per square mm, more preferably 200 to 30000.
  • a film forming resin such as a phenoxy resin, an epoxy resin, an unsaturated polyester resin, a saturated polyester resin, a urethane resin, a butadiene resin, a polyimide resin, a polyamide resin, or a polyolefin resin is used in combination as necessary. be able to. You may use together similarly to a 2nd connection layer and a 3rd connection layer.
  • the layer thickness of the first connection layer 2 is too thin, the mounting conductive particle trapping rate tends to decrease, and if it is too thick, the conduction resistance tends to increase, so that it is preferably 1.0 to 6.0 ⁇ m, more preferably Is 2.0 to 5.0 ⁇ m.
  • the first connection layer 2 may further contain an epoxy compound and a heat or photocation or an anionic polymerization initiator.
  • the second connection layer 3 is also preferably a heat or photocation or anion polymerizable resin layer containing an epoxy compound and heat or a photocation or anion polymerization initiator. Thereby, delamination strength can be improved.
  • the epoxy compound and the heat or photocation or anion polymerization initiator will be described in the second connection layer 3.
  • the conductive particles 4 bite into the second connection layer 3 (in other words, the conductive particles 4 are on the surface of the first connection layer 2. It is preferable that the This is because when all the conductive particles are buried in the first connection layer 2, there is a concern that the resistance conduction is increased. If the degree of biting is too small, the mounting conductive particle trapping rate tends to decrease, and if it is too large, the conduction resistance tends to increase. Therefore, the average particle diameter of the conductive particles is preferably 10 to 90%, more preferably. 20 to 80%.
  • the 1st connection layer 2 of the anisotropic conductive film of the 1st aspect of this invention shown in FIG. 1 since light irradiation is performed obliquely, the surface of the 1st connection layer by the side of the 2nd connection layer is carried out. A region having a curing rate lower than the curing rate exists obliquely in the thickness direction of the first connection layer. As a result, the region 2X of the first connection layer is easily removed during the thermocompression bonding of the anisotropic conductive connection, and the conduction reliability is improved.
  • the curing rate is a numerical value defined as the vinyl group reduction ratio
  • the curing rate of the region 2X of the first connection layer is preferably 40 to 80%
  • the curing rate of the region 2Y of the first connection layer is Preferably it is 70 to 100%.
  • surface (2nd connection layer side surface) of the 1st connection layer 2 (area
  • the curing rate is low.
  • the region 2X of the first connection layer is easily removed during the thermocompression bonding of the anisotropic conductive connection, and the conduction reliability is improved.
  • the curing rate is a numerical value defined as the vinyl group reduction ratio
  • the curing rate of the region 2X of the first connection layer is preferably 40 to 80%
  • the curing rate of the region 2Y of the first connection layer is Preferably it is 70 to 100%.
  • the radical photopolymerization at the time of forming the first connection layer 2 may be performed in one step (that is, one time of light irradiation), but may be performed in two steps (that is, two times of light irradiation). Good.
  • the second-stage light irradiation is performed from the other surface side of the first connection layer 2 in an oxygen-containing atmosphere (in the atmosphere) after the second connection layer 3 is formed on one surface of the first connection layer 2. It is preferable. Thereby, it can be expected that the radical polymerization reaction is oxygen-inhibited, the surface concentration of the uncured component is increased, and tackiness can be improved.
  • the polymerization reaction since the polymerization reaction is complicated by performing the curing in two stages, it can be expected that the fluidity of the resin and particles can be precisely controlled.
  • the curing rate in the first stage of the region 2X of the first connection layer in the two-stage photoradical polymerization is preferably 10 to 50%, and the curing ratio in the second stage is preferably 40 to 80%,
  • the curing rate in the first stage of the region 2Y of the first connection layer is preferably 30 to 90%, and the curing rate in the second stage is preferably 70 to 100%.
  • the radical photopolymerization initiator is preferably used for improving tackiness.
  • a photo radical polymerization initiator for example, IRGACURE 369, BASF Japan Ltd.
  • a photo radical polymerization initiator that initiates a radical reaction with light having a wavelength of 365 nm from an LED light source
  • a photo radical polymerization that initiates a radical reaction with light from a high pressure mercury lamp light source. It is preferable to use together with an initiator (for example, IRGACURE2959, BASF Japan Ltd.).
  • the minimum melt viscosity when measured with the rheometer of the first connection layer 2 is higher than the minimum melt viscosity of the second connection layer 3, specifically, [the minimum melt viscosity of the first connection layer 2 (mPa ⁇ S)] / [the minimum melt viscosity (mPa ⁇ s) of the second connection layer 3] is preferably 1 to 1000, more preferably 4 to 400.
  • the preferred minimum melt viscosity for each of the former is 100 to 100,000 mPa ⁇ s, and more preferably 500 to 50,000 mPa ⁇ s.
  • the latter is preferably 0.1 to 10000 mPa ⁇ s, more preferably 0.5 to 1000 mPa ⁇ s.
  • the first connection layer 2 is formed on a photo radical polymerizable resin layer containing a photo radical polymerizable acrylate and a photo radical polymerization initiator by a film transfer method, a mold transfer method, an ink jet method, an electrostatic adhesion method, or the like.
  • Conductive particles can be attached by a technique, and ultraviolet rays can be irradiated from the conductive particle side, the opposite side, or both sides. In particular, it is preferable to irradiate ultraviolet rays only from the conductive particle side from the viewpoint that the curing rate of the region 2X of the first connection layer can be suppressed relatively low.
  • the second connection layer 3 is a heat or photocation, anion or radical polymerizable resin layer, preferably a heat or photocation or anion polymerizable resin layer containing an epoxy compound and a heat or photocation or anion polymerization initiator, or It consists of a heat or photo radical polymerizable resin layer containing an acrylate compound and a heat or photo radical polymerization initiator.
  • the formation of the second connection layer 3 from the thermopolymerizable resin layer means that the polymerization reaction of the second connection layer 3 does not occur due to the ultraviolet irradiation when the first connection layer 2 is formed. And desirable in terms of quality stability.
  • the second connection layer 3 is a heat, photocation or anion polymerizable resin layer, it can further contain an acrylate compound and a heat or photo radical polymerization initiator. Thereby, the 1st connection layer 2 and delamination strength can be improved.
  • the epoxy compound When the second connection layer 3 is a heat or photocation or anion polymerizable resin layer containing an epoxy compound and a heat or photocation or anion polymerization initiator, the epoxy compound has two or more epoxy groups in the molecule. Preferred are compounds or resins having These may be liquid or solid.
  • thermal cationic polymerization initiator those known as the thermal cationic polymerization initiator of the epoxy compound can be adopted, for example, those which generate an acid capable of cationically polymerizing the cationic polymerizable compound by heat.
  • Iodonium salts, sulfonium salts, phosphonium salts, ferrocenes, and the like can be used, and aromatic sulfonium salts exhibiting good potential with respect to temperature can be preferably used.
  • the amount of the thermal cationic polymerization initiator is preferably 2 to 60 masses per 100 mass parts of the epoxy compound. Part, more preferably 5 to 40 parts by weight.
  • thermal anionic polymerization initiator those known as the thermal anionic polymerization initiator of the epoxy compound can be employed.
  • a base capable of anionic polymerization of the anionic polymerizable compound is generated by heat, and is publicly known.
  • Aliphatic amine compounds, aromatic amine compounds, secondary or tertiary amine compounds, imidazole compounds, polymercaptan compounds, boron trifluoride-amine complexes, dicyandiamide, organic acid hydrazides, etc. can be used.
  • An encapsulated imidazole compound showing good potential with respect to temperature can be preferably used.
  • the amount of the thermal anionic polymerization initiator is preferably 2 to 60 masses per 100 mass parts of the epoxy compound. Part, more preferably 5 to 40 parts by weight.
  • Photocationic polymerization initiator and photoanionic polymerization initiator A well-known thing can be used suitably as a photocationic polymerization initiator or photoanion polymerization initiator for epoxy compounds.
  • connection layer 3 is a heat or photo radical polymerizable resin layer containing an acrylate compound and a heat or photo radical polymerization initiator
  • the acrylate compound is appropriately selected from those described for the first connection layer 2 Can be used.
  • thermal radical polymerization initiator examples include organic peroxides and azo compounds, but organic peroxides that do not generate nitrogen that causes bubbles can be preferably used.
  • the amount of the thermal radical polymerization initiator used is preferably 2 to 60 parts by weight, more preferably 5 to 40 parts per 100 parts by weight of the acrylate compound. Part by mass.
  • Photo radical polymerization initiator As a radical photopolymerization initiator for the acrylate compound, a known radical photopolymerization initiator can be used.
  • the amount of the radical photopolymerization initiator used is preferably 2 to 60 parts by weight, more preferably 5 to 40 parts per 100 parts by weight of the acrylate compound. Part by mass.
  • connection layer 5 The anisotropic conductive film having the two-layer structure shown in FIGS. 1 and 10 has been described above. However, as shown in FIGS. 5 and 14, the third connection layer 5 is formed on the other surface of the first connection layer 2. May be. Thereby, the effect that it becomes possible to control the fluidity
  • the third connection layer 5 may have the same configuration as the second connection layer 3 described above. That is, the third connection layer 5 is made of a heat or photocation, anion, or radical polymerizable resin layer, like the second connection layer 3.
  • the third connection layer 5 may be formed on the other surface of the first connection layer after the second connection layer is formed on one surface of the first connection layer.
  • the third connection layer 5 may be formed.
  • the third connection layer may be formed in advance on the other surface (the surface on which the second connection layer is not formed) of one connection layer or a photopolymerizable resin layer that is a precursor thereof.
  • the production method for the anisotropic conductive film of the first aspect of the present invention includes a production method for carrying out a one-stage photopolymerization reaction and a production method for carrying out a two-stage photopolymerization reaction.
  • the conductive particles 4 are arranged in a single layer on the photopolymerizable resin layer 31 formed on the release film 30 as necessary.
  • the method for arranging the conductive particles 4 is not particularly limited, and a method using a biaxial stretching operation for the unstretched polypropylene film of Example 1 of Japanese Patent No. 4778938, or a mold disclosed in Japanese Patent Application Laid-Open No. 2010-33793. The method used can be adopted. It should be noted that the degree of arrangement is preferably two-dimensionally separated from each other by about 1 to 100 ⁇ m in consideration of the size of the connection target, conduction reliability, insulation, mounting conductive particle capture rate, and the like.
  • ultraviolet rays may be irradiated in a pulse shape as necessary, or a shutter may be provided for irradiation.
  • To irradiate with ultraviolet rays inclined means to irradiate the photopolymerizable resin layer 31 with ultraviolet rays at an inclination angle ⁇ .
  • the inclination angle ⁇ is 0 ° ⁇ ⁇ 90 °, preferably 30 ° ⁇ ⁇ ⁇ 60 °. In this case, it is preferable to incline in the direction orthogonal to the longitudinal direction of the anisotropic conductive film. If it does in this way, the direction of flow of conductive particles and the longitudinal direction of a bump (namely, width direction of an anisotropic conductive film) can be made to correspond.
  • the left half of the photopolymerizable resin layer in the longitudinal direction of the anisotropic conductive film is masked, and the right half is irradiated by inclining ultraviolet rays so as to flow toward the right side of the anisotropic conductive film. Then, it is preferable that the right half is masked, and the left half is irradiated with an ultraviolet ray inclined so that a flow occurs toward the left side of the anisotropic conductive film.
  • the second connection layer 3 made of heat, photocation, anion, or radical polymerizable resin layer is formed on the surface of the first connection layer 2 on the conductive particle 4 side.
  • the second connection layer 3 formed on the release film 40 by a conventional method is placed on the surface of the first connection layer 2 on the conductive particle 4 side, and thermocompression-bonded to such an extent that excessive thermal polymerization does not occur. Then, by removing the release films 30 and 40, the anisotropic conductive film of FIG. 4B can be obtained.
  • anisotropic conductive film 100 of FIG. 5 can be obtained by implementing the following processes (Z) after a process (C).
  • a third connection layer made of a heat, photocation, anion, or radical polymerizable resin layer is formed on the opposite surface of the first connection layer on the conductive particle side, preferably in the same manner as the second connection layer. Thereby, the anisotropic conductive film of FIG. 5 can be obtained.
  • anisotropic conductive film 100 of FIG. 5 can also be obtained by performing the following process (a) prior to the process (A) without performing the process (Z).
  • This step is a step of forming a third connection layer made of heat, photocation, anion, or radical polymerizable resin layer on one side of the photopolymerizable resin layer.
  • the anisotropic conductive film 100 of FIG. 5 can be obtained by carrying out the steps (A), (B) and (C).
  • the conductive particles are arranged in a single layer on the other surface of the radical photopolymerizable resin layer.
  • the conductive particles 4 are arranged in a single layer on the photopolymerizable resin layer 31 formed on the release film 30 as necessary.
  • the method for arranging the conductive particles 4 is not particularly limited, and a method using a biaxial stretching operation for the unstretched polypropylene film of Example 1 of Japanese Patent No. 4778938, or a mold disclosed in Japanese Patent Application Laid-Open No. 2010-33793. The method used can be adopted. It should be noted that the degree of arrangement is preferably two-dimensionally separated from each other by about 1 to 100 ⁇ m in consideration of the size of the connection target, conduction reliability, insulation, mounting conductive particle capture rate, and the like.
  • the photopolymerizable resin layer 31 in which the conductive particles 4 are arranged is irradiated with a photoradical polymerization reaction by inclining ultraviolet rays (UV) from the conductive particle side, and is applied to the surface.
  • a temporary first connection layer 20 in which the conductive particles 4 are temporarily fixed is formed.
  • the curing rate of the skewed temporary first connection layer region 2X located between the conductive particles 4 and the outermost surface of the temporary first connection layer 20 is set to be equal to each other. It can be made lower than the curing rate of the region 2Y of the temporary first connection layer located between the particles 4.
  • the second connection layer 3 made of a thermal cation, anion, or radical polymerizable resin layer is formed on the surface of the temporary first connection layer 20 on the conductive particle 4 side.
  • the second connection layer 3 formed on the release film 40 by a conventional method is placed on the surface of the first connection layer 2 on the conductive particle 4 side, and thermocompression-bonded to such an extent that excessive thermal polymerization does not occur.
  • the temporary anisotropic conductive film 50 of FIG. 8B can be obtained by removing the release films 30 and 40.
  • the temporary first connection layer 20 is irradiated with ultraviolet rays from the side opposite to the second connection layer 3 to cause a photoradical polymerization reaction. 20 is fully cured to form the first connection layer 2. Thereby, the anisotropic conductive film 1 of FIG. 9B can be obtained.
  • the ultraviolet irradiation in this step is preferably performed from a direction perpendicular to the temporary first connection layer.
  • the anisotropic conductive film 100 of FIG. 5 can be obtained by implementing the following processes (Z) after a process (DD).
  • a third connection layer made of a heat, photocation, anion, or radical polymerizable resin layer is formed on the opposite surface of the first connection layer on the conductive particle side, preferably in the same manner as the second connection layer. Thereby, the anisotropic conductive film of FIG. 5 can be obtained.
  • anisotropic conductive film 100 of FIG. 5 can also be obtained by performing the following process (a) prior to the process (AA) without performing the process (Z).
  • This step is a step of forming a third connection layer made of heat, photocation, anion, or radical polymerizable resin layer on one side of the photopolymerizable resin layer.
  • steps (AA) to (DD) are carried out to obtain the anisotropic conductive film 100 of FIG.
  • the conductive particles are arranged in a single layer on the other surface of the photopolymerizable resin layer.
  • a photopolymerization initiator there is a concern that the product life as an anisotropic conductive film, connection, and stability of the connection structure may be adversely affected in the process.
  • the manufacturing method of the anisotropic conductive film of the 2nd aspect of this invention >> In the method for producing the anisotropic conductive film of the second aspect of the present invention, as in the method for producing the anisotropic conductive film of the first aspect, a production method for performing a one-step photopolymerization reaction, A production method in which a two-stage photopolymerization reaction is performed can be mentioned.
  • the conductive particles 4 are arranged in a single layer on the photopolymerizable resin layer 31 formed on the release film 30 as necessary.
  • the method for arranging the conductive particles 4 is not particularly limited, and a method using a biaxial stretching operation for the unstretched polypropylene film of Example 1 of Japanese Patent No. 4778938, or a mold disclosed in Japanese Patent Application Laid-Open No. 2010-33793. The method used can be adopted. It should be noted that the degree of arrangement is preferably two-dimensionally separated from each other by about 1 to 100 ⁇ m in consideration of the size of the connection target, conduction reliability, insulation, mounting conductive particle capture rate, and the like.
  • the photopolymerizable resin layer 31 in which the conductive particles 4 are arranged is irradiated with ultraviolet rays (UV) inclined from at least two directions from the conductive particle side using an LED light source or the like.
  • UV ultraviolet rays
  • a photopolymerization reaction is performed to form the first connection layer 2 on the surface of which the conductive particles 4 are fixed.
  • FIG. 12B the region 2X of the first connection layer located between the conductive particles 4 and the outermost surface of the first connection layer 2 (in other words, the region behind the conductive particles of the first connection layer).
  • the first connection layer 2 in the region near the conductive particles of the first connection layer 2 is harder than the curing rate of the region 2 ⁇ / b> Y of the first connection layer 2 on the second connection layer side. It is possible to reduce the curing rate of the region (first connection layer region 2X) that is relatively close to the other surface (outermost surface 2b). By doing in this way, the hardening rate of the back side area
  • the directions in “inclined from at least two directions” are directions intersecting each other, and these directions may not be in the same plane. In the case of two directions, it is preferable to incline axisymmetrically in a plane perpendicular to the photopolymerizable resin layer 31.
  • the inclination angle ⁇ is preferably 0 ° ⁇ ⁇ 90 °, more preferably 30 ° ⁇ ⁇ ⁇ 60 ° with respect to the photopolymerizable resin layer 31.
  • the plurality of directions preferably have the same inclination angle, but may have different inclination angles.
  • the region 2X of the first connection layer which is a region having a relatively low curing rate, can be localized in the backside region of the conductive particles. Further, the position of the region 2X of the first connection layer can be controlled by making the inclination angles in the two directions asymmetric.
  • the second connection layer 3 made of heat, photocation, anion, or radical polymerizable resin layer is formed on the surface of the first connection layer 2 on the conductive particle 4 side.
  • the second connection layer 3 formed on the release film 40 by a conventional method is placed on the surface of the first connection layer 2 on the conductive particle 4 side, and thermocompression-bonded to such an extent that excessive thermal polymerization does not occur. Then, by removing the release films 30 and 40, the anisotropic conductive film of FIG. 13B can be obtained.
  • the anisotropic conductive film 100 of FIG. 14 implements the following processes (Z) after a process (C ') similarly to the manufacturing method of the anisotropic conductive film of the 1st aspect of this invention. Can be obtained.
  • Process (Z) A third connection layer made of a heat, photocation, anion, or radical polymerizable resin layer is formed on the opposite surface of the first connection layer on the conductive particle side, preferably in the same manner as the second connection layer. Thereby, the anisotropic conductive film of FIG. 14 can be obtained.
  • the anisotropic conductive film 100 of FIG. 14 does not perform a process (Z) similarly to the manufacturing method of the anisotropic conductive film of the 1st aspect of this invention, Prior to a process (A '), It can also be obtained by carrying out the following step (a).
  • This step is a step of forming a third connection layer made of heat, photocation, anion, or radical polymerizable resin layer on one side of the photopolymerizable resin layer.
  • the anisotropic conductive film 100 of FIG. 14 can be obtained by carrying out steps (A ′), (B ′) and (C ′). However, in the step (A ′), the conductive particles are arranged in a single layer on the other surface of the photopolymerizable resin layer.
  • the conductive particles 4 are arranged in a single layer on the photopolymerizable resin layer 31 formed on the release film 30 as necessary.
  • the method for arranging the conductive particles 4 is not particularly limited, and a method using a biaxial stretching operation for the unstretched polypropylene film of Example 1 of Japanese Patent No. 4778938, or a mold disclosed in Japanese Patent Application Laid-Open No. 2010-33793. The method used can be adopted. It should be noted that the degree of arrangement is preferably two-dimensionally separated from each other by about 1 to 100 ⁇ m in consideration of the size of the connection target, conduction reliability, insulation, mounting conductive particle capture rate, and the like.
  • the photopolymerizable resin layer 31 in which the conductive particles 4 are arranged is irradiated with ultraviolet rays (UV) inclined from at least two directions from the conductive particle side to cause a photopolymerization reaction.
  • the temporary first connection layer 20 in which the conductive particles 4 are temporarily fixed is formed on the surface.
  • the curing rate of the region 2X of the temporary first connection layer located between the conductive particles 4 and the outermost surface of the temporary first connection layer 20 is determined between the adjacent conductive particles 4. It can be made lower than the curing rate of the region 2Y of the temporary first connection layer located in the region.
  • the temporary first connection layer 20 has a hardening rate higher than the curing rate of one surface (second connection layer side surface) of the temporary first connection layer 20 (region 2 ⁇ / b> Y of the temporary first connection layer).
  • the curing rate of the region (temporary first connection layer region 2X) relatively close to the other surface (outermost surface 2b) of the temporary first connection layer 20 can be reduced.
  • the second connection layer 3 made of a thermal cation, an anion, or a radical polymerizable resin layer is formed on the surface of the temporary first connection layer 20 on the conductive particle 4 side.
  • the second connection layer 3 formed on the release film 40 by a conventional method is placed on the surface of the first connection layer 2 on the conductive particle 4 side, and thermocompression-bonded to such an extent that excessive thermal polymerization does not occur.
  • the temporary anisotropic conductive film 50 of FIG. 17B can be obtained by removing the peeling films 30 and 40.
  • the temporary first connection layer 20 is irradiated with ultraviolet rays from the side opposite to the second connection layer 3 to cause a photopolymerization reaction. Is hardened to form the first connection layer 2. Thereby, the anisotropic conductive film 1 of FIG. 18B can be obtained.
  • the irradiation with ultraviolet rays in this step is preferably performed from a direction perpendicular to the temporary first connection layer 20.
  • the anisotropic conductive film 100 of FIG. 14 is subjected to the step (DD ′) in the same manner as in the method of manufacturing the anisotropic conductive film of the first aspect of the present invention. It can be obtained by carrying out the following step (Z).
  • a third connection layer made of a heat, photocation, anion, or radical polymerizable resin layer is formed on the opposite surface of the first connection layer on the conductive particle side, preferably in the same manner as the second connection layer. Thereby, the anisotropic conductive film of FIG. 5 can be obtained.
  • the anisotropic conductive film 100 of FIG. 14 does not perform a process (Z) similarly to the manufacturing method of the anisotropic conductive film of the 1st aspect of this invention, Prior to a process (AA '), It can also be obtained by carrying out the following step (a).
  • This step is a step of forming a third connection layer made of heat, photocation, anion, or radical polymerizable resin layer on one side of the photopolymerizable resin layer.
  • steps (AA ′) to (DD ′) are carried out to obtain the anisotropic conductive film 100 of FIG.
  • the conductive particles are arranged in a single layer on the other surface of the photopolymerizable resin layer.
  • a photopolymerization initiator there is a concern that the product life as an anisotropic conductive film, connection, and stability of the connection structure may be adversely affected in the process.
  • connection structure The anisotropic conductive film of the present invention thus obtained is used for anisotropic conductive connection between a first electronic component such as an IC chip or IC module and a second electronic component such as a flexible substrate or a glass substrate. It can be preferably applied to.
  • the connection structure thus obtained is also part of the present invention. Note that the first connection layer side of the anisotropic conductive film is disposed on the second electronic component side such as a flexible substrate, and the second connection layer side is disposed on the first electronic component side such as an IC chip. It is preferable from the point of improving the property.
  • Example 1 Comparative Example 1 Conductive particles are arranged according to the operation of Example 1 (equal arrangement of conductive particles) of Japanese Patent No. 4778938, and the first connection layer and the second connection layer are laminated according to the composition (parts by mass) shown in Table 1. An anisotropic conductive film having a two-layer structure was prepared.
  • First connection layer Specifically, first, a mixed solution of an acrylate compound, a radical photopolymerization initiator, and the like was prepared using ethyl acetate or toluene so that the solid content was 50% by mass. This mixed solution is applied to a polyethylene terephthalate film having a thickness of 50 ⁇ m so as to have a dry thickness of 5 ⁇ m, and dried in an oven at 80 ° C. for 5 minutes, whereby radical photopolymerization that is a precursor layer of the first connection layer is performed. A functional resin layer was formed.
  • conductive particles Ni / Au plating resin particles, AUL704, Sekisui Chemical Co., Ltd.
  • conductive particles Ni / Au plating resin particles, AUL704, Sekisui Chemical Co., Ltd.
  • ultraviolet rays having a wavelength of 365 nm and an integrated light amount of 4000 mJ / cm 2 from the LED light source are orthogonal to the longitudinal direction of the anisotropic conductive film from the conductive particle side to the radical photopolymerizable resin layer at the angles shown in Table 1.
  • the first connection layer having conductive particles fixed on the surface was formed.
  • ultraviolet rays were irradiated from the conductive particle side to the photoradical polymerizable resin layer at an angle of 90 °.
  • thermosetting resin e.g., polyethylene terephthalate film having a thickness of 50 ⁇ m so as to have a dry thickness of 12 ⁇ m, and dried in an oven at 80 ° C. for 5 minutes to form a second connection layer.
  • An anisotropic conductive film was obtained by laminating the first connection layer and the second connection layer thus obtained so that the conductive particles were inside.
  • an IC chip (bump size 30 ⁇ 85 ⁇ m: bump height 15 ⁇ m, bump pitch 50 ⁇ m) of 0.5 ⁇ 1.8 ⁇ 20.0 mm is 0.5 ⁇
  • a glass wiring board (1737F) manufactured by Corning with a size of 50 ⁇ 30 mm under conditions of 50 ° C., 5 MPa, and 1 second, and further mounted and connected under conditions of 180 ° C., 80 MPa, and 5 seconds.
  • a structural sample body was obtained.
  • connection structure sample body As described below, “mounting conductive particle capture efficiency”, “direction of conductive particles during anisotropic conductive connection”, “initial conduction resistance”, “conduction after aging” Resistance ”and“ Short occurrence rate ” were tested and evaluated. The obtained results are shown in Table 1.
  • “Mounting conductive particle capture rate” At the time of mounting, the ratio of the amount of particles actually captured after heating and pressing to the theoretical amount of particles existing on the bumps of the connection structure sample body before heating and pressing was determined. The amount of particles was counted using an optical microscope. Practically 50% or more is desirable.
  • connection structure sample The conduction resistance value of the connection structure sample was measured using a digital multimeter (Agilent Technology Co., Ltd.).
  • connection structure sample was left in a high-temperature and high-humidity environment at 85 ° C. and 85% RH for 500 hours, the conduction resistance was measured using a digital multimeter (Agilent Technology Co., Ltd.). Practically, it is desirable that it is 4 ⁇ or less.
  • First connection layer Specifically, first, a mixed solution of an acrylate compound, a radical photopolymerization initiator, and the like was prepared using ethyl acetate or toluene so that the solid content was 50% by mass. This mixed solution is applied to a polyethylene terephthalate film having a thickness of 50 ⁇ m so as to have a dry thickness of 5 ⁇ m, and dried in an oven at 80 ° C. for 5 minutes, whereby radical photopolymerization that is a precursor layer of the first connection layer is performed. A functional resin layer was formed.
  • conductive particles Ni / Au plating resin particles, AUL704, Sekisui Chemical Co., Ltd.
  • conductive particles having an average particle diameter of 4 ⁇ m are arranged in a single layer with a separation of 4 ⁇ m from the obtained photoradical polymerizable resin layer.
  • the surface of the conductive particle is irradiated with ultraviolet rays having a wavelength of 365 nm and an integrated light amount of 4000 mJ / cm 2 from the LED light source to the radical photopolymerizable resin layer from the conductive particle side in the direction and angle shown in Table 2. Formed a first connection layer.
  • Examples 4 to 6 ultraviolet rays were irradiated from the conductive particle side to the photoradically polymerizable resin layer from two directions each having an angle of 60 ° and an included angle of 60 ° in a vertical plane.
  • the photoradical polymerizable resin layer was irradiated with ultraviolet rays from two directions with an angle of 60 ° and 30 ° and an included angle of 90 ° in a vertical plane from the conductive particle side.
  • Example 8 the photoradical polymerizable resin layer was irradiated from the conductive particle side with ultraviolet rays from two directions at an angle of 90 ° and 30 ° and an included angle of 60 ° in a vertical plane.
  • Example 9 the photoradical polymerizable resin layer was irradiated with ultraviolet rays from the conductive particle side from two directions, ie, a 90 ° direction and a 60 ° angle and a included angle of 30 ° within a vertical plane.
  • ultraviolet rays were irradiated at an angle of 90 ° from the back surface of the photoradical polymerizable resin layer (the surface on the side where the conductive particles are not arranged).
  • Comparative Example 3 on the contrary, the photoradical polymerizable resin layer was irradiated with ultraviolet rays in one direction at 90 ° from the conductive particle side.
  • thermosetting resin e.g., polyethylene terephthalate film having a thickness of 50 ⁇ m so as to have a dry thickness of 12 ⁇ m, and dried in an oven at 80 ° C. for 5 minutes to form a second connection layer.
  • An anisotropic conductive film was obtained by laminating the first connection layer and the second connection layer thus obtained so that the conductive particles were inside.
  • an IC chip (bump size 30 ⁇ 85 ⁇ m: bump height 15 ⁇ m, bump pitch 50 ⁇ m) of 0.5 ⁇ 1.8 ⁇ 20.0 mm is 0.5 ⁇
  • a glass wiring board (1737F) manufactured by Corning with a size of 50 ⁇ 30 mm under conditions of 50 ° C., 5 MPa, and 1 second, and further mounted and connected under conditions of 180 ° C., 80 MPa, and 5 seconds.
  • a structural sample body was obtained.
  • Thickness ratio (%) of 90% or more of the first connection layer A region where the cross section of the first connection layer is exposed by cross-sectional polishing from the connection structure sample body, the presence or absence of a vinyl group in the vicinity of the exposed conductive particles is IR-measured, and the curing rate with respect to the total thickness is 90% or more The thickness ratio was determined.
  • Percentage of conductive particles on bump edge (%) When creating the connection structure sample body, the number of conductive particles on the bump edge (the outer edge of the bump 6 ⁇ m wide) at the time of temporary attachment is counted using an optical microscope, and it exists on the same outer edge after mounting. The number of conductive particles was counted, and the ratio of the number of conductive particles after mounting to the number of conductive particles at the time of temporary attachment was determined.
  • the anisotropic conductive films of Examples 4 to 9 were cured in the region below the conductive particle proximity region in the first connection layer (in the first connection layer surface direction opposite to the second connection layer). Since the ratio of the thickness with the rate of 90% or more is 20 to 90%, the conductive particles are pushed in well while suppressing movement in the plane direction so as not to cause displacement of the conductive particles during mounting. As a result, it can be seen that the distance between the conductive particles on the bump is difficult to change, and the ratio of the conductive particles flowing out of the bump from the bump edge is greatly reduced. From this, it can be seen that good conduction reliability, good insulating properties, and good mounting conductive particle capture rate can be realized.
  • the anisotropic conductive film of Comparative Example 2 since the entire first connection layer has a curing rate of 90% or more, it cannot be pushed in well while suppressing movement in the planar direction. As a result, it can be seen that the distance between the conductive particles on the bumps is increased, and the ratio of the conductive particles flowing out of the bumps from the bump edges is greatly increased.
  • the anisotropic conductive film of Comparative Example 3 since the ultraviolet rays were irradiated from one direction of 90 ° direction (vertical direction) from the conductive particle side instead of the ultraviolet irradiation from two directions, 90% or more below the conductive particles.
  • the rate of curing is less than 10%, it cannot be pushed in well while suppressing movement in the plane direction as compared with Examples 4 to 6, and as a result, the conductivity on the bumps is reduced. It can be seen that the distance between the particles has increased, and the rate at which the conductive particles have flowed out of the bump from the bump edge has increased significantly.
  • the anisotropic conductive film of the first aspect of the present invention includes a first connection layer obtained by photoradical polymerization of a photoradically polymerizable resin layer, a heat or photocationic or anionic polymerizable resin layer, or preferably an acrylate compound. It has a two-layer structure in which a second connection layer made of a heat or photo radical polymerizable resin layer containing a heat or photo radical polymerization initiator is laminated, and further, the second connection of the first connection layer Conductive particles for anisotropic conductive connection are arranged in a single layer on the layer side surface.
  • a first connection layer made of a photopolymerization resin layer and a second connection layer made of a heat or photocation, anion or radical polymerizable resin layer are laminated. It has a two-layer structure, and conductive particles for anisotropic conductive connection are arranged in a single layer on the second connection layer side surface of the first connection layer. And the hardening rate of the area

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Abstract

 異方性導電フィルムは、第1接続層とその片面に形成された第2接続層とを有する。第1接続層は光重合樹脂層であり、第2接続層は、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層である。第1接続層の第2接続層側表面には、異方性導電接続用の導電粒子が単層で配列されている。第1接続層の硬化率に関し、該片面の硬化率よりも低い硬化率を有する領域が、第1接続層の厚み方向に斜行して存在している。あるいは、第1接続層の該片面の硬化率よりも、第1接続層の導電粒子近傍領域のうち、第1接続層の他面に相対的に近い領域の硬化率が低い。

Description

異方性導電フィルム及びその製造方法
 本発明は、異方性導電フィルム及びその製造方法に関する。
 ICチップなどの電子部品の実装に異方性導電フィルムは広く使用されており、近年では、高密度実装への適用の観点から、導通信頼性や絶縁性の向上、実装導電粒子捕捉率の向上、製造コストの低減等を目的に、異方性導電接続用の導電粒子を単層で絶縁性接着層に配列させた2層構造の異方性導電フィルムが提案されている(特許文献1)。
 この2層構造の異方性導電フィルムは、転写層に単層且つ細密充填で導電粒子を配列させた後、転写層を2軸延伸処理することにより、導電粒子が所定間隔で均等に配列された転写層を形成した後、その転写層上の導電粒子を熱硬化性樹脂と重合開始剤とを含有する絶縁性樹脂層に転写し、更に転写した導電粒子上に、熱硬化性樹脂を含有するが重合開始剤を含有しない別の絶縁性樹脂層をラミネートすることにより製造されている(特許文献1)。
特許第4789738号明細書
 しかしながら、特許文献1の2層構造の異方性導電フィルムは、重合開始剤を含有していない絶縁性樹脂層を使用しているために、単層で所定間隔で均等に導電粒子を配列させたにもかかわらず、異方性導電接続の際の加熱により、重合開始剤を含有していない絶縁性樹脂層に比較的大きな樹脂流れが生じ易く、その流れに沿って導電粒子も流れ易くなるため、実装導電粒子捕捉率の低下、ショートの発生、絶縁性の低下等の問題が生じていた。
 本発明の目的は、以上の従来の技術の問題点を解決することであり、単層で配列された導電粒子を有する多層構造の異方性導電フィルムにおいて、良好な導通信頼性、良好な絶縁性、及び良好な実装導電粒子捕捉率を実現することである。
 本発明者らは、光重合性樹脂層に導電粒子を単層で配列させた後に、紫外線を傾斜させて照射することにより又は紫外線を少なくとも2方向から傾斜させて照射することにより導電粒子を固定化もしくは仮固定化し、更に固定化若しくは仮固定化された導電粒子上に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層を積層することにより得た異方性導電フィルムが、上述の本発明の目的を達成できる構成であることを見出し、本発明を完成させるに至った。
 即ち、本発明の第1の態様は、第1接続層とその片面に形成された第2接続層とを有する異方性導電フィルムであって、
 第1接続層が、光重合樹脂層であり、
 第2接続層が、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層であり、
 第1接続層の該片面に、異方性導電接続用の導電粒子が単層で配列されており、
 第1接続層の硬化率に関し、該片面の硬化率よりも低い硬化率を有する領域が、第1接続層の厚み方向に斜行して存在している
ことを特徴とする異方性導電フィルムを提供する。
 また、本発明の第2の態様は、第1接続層とその片面に形成された第2接続層とを有する異方性導電フィルムであって、
 第1接続層が、光重合樹脂層であり、
 第2接続層が、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層であり、
 第1接続層の該片面に、異方性導電接続用の導電粒子が単層で配列されており、
 第1接続層の該片面の硬化率よりも、第1接続層の導電粒子近傍領域のうち、第1接続層の他面に相対的に近い領域の硬化率が低い
ことを特徴とする異方性導電フィルムを提供する。
 なお、本発明において、第2接続層は、加熱により重合反応を開始する熱重合開始剤を使用した熱重合性樹脂層であることが好ましいが、光により重合反応を開始する光重合開始剤を使用した光重合性樹脂層であってもよい。熱重合開始剤と光重合開始剤とを併用した熱・光重合性樹脂層であってもよい。ここで、第2接続層は、製造上、熱重合開始剤を使用した熱重合性樹脂層に限定される場合がある。
 本発明の異方性導電フィルムは、第1接続層の他面に、応力緩和などの接合体の反り防止を目的に、第2の接続層と略同様の構成の第3接続層を有していてもよい。即ち、第1接続層の他面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を有していてもよい。
 なお、第3接続層は、加熱により重合反応を開始する熱重合開始剤を使用した熱重合性樹脂層であることが好ましいが、光により重合反応を開始する光重合開始剤を使用した光重合性樹脂層であってもよい。熱重合開始剤と光重合開始剤とを併用した熱・光重合性樹脂層であってもよい。ここで、第3接続層は、製造上、熱重合開始剤を使用した熱重合性樹脂層に限定される場合がある。
 また、本発明は、上述の本発明の第1の態様の異方性導電フィルムの製造方法であって、第1接続層を一段階の光重合反応で形成する以下の工程(A)~(C)、又は第1接続層を二段階の光ラジカル重合反応で形成する後述する工程(AA)~(DD)を有する製造方法を提供する。
(第1接続層を一段階の光重合反応で形成する場合)
工程(A)
 光重合性樹脂層に導電粒子を単層で配列させる工程;
工程(B)
 導電粒子が配列した光重合性樹脂層に対して紫外線を傾斜させて照射することにより光ラジカル重合反応させ、表面に導電粒子が固定化された第1接続層を形成する工程;及び
工程(C)
 第1接続層の導電粒子側表面に、熱又は光カチオン若しくはアニオン重合性樹脂層、又は熱又は光ラジカル重合性樹脂層からなる第2接続層を形成する工程。
(第1接続層を二段階の光重合反応で形成する場合)
工程(AA)
 光重合性樹脂層に導電粒子を単層で配列させる工程;
工程(BB)
 導電粒子が配列した光重合性樹脂層に対して紫外線を傾斜させて照射することにより光ラジカル重合反応させ、表面に導電粒子が仮固定化された仮第1接続層を形成する工程;
工程(CC)
 仮第1接続層の導電粒子側表面に、熱カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層を形成する工程;及び
工程(DD)
 第2接続層と反対側から仮第1接続層に紫外線を照射することにより光重合反応させ、仮第1接続層を本硬化させて第1接続層を形成する工程。
 また、本発明は、上述の本発明の2の態様の第異方性導電フィルムの製造方法であって、第1接続層を一段階の光重合反応で形成する以下の工程(A′)~(C′)、又は第1接続層を二段階の光重合反応で形成する後述する工程(AA′)~(DD′)を有する製造方法を提供する。
(第1接続層を一段階の光重合反応で形成する場合)
工程(A′)
 光重合性樹脂層に導電粒子を単層で配列させる工程;
工程(B′)
 導電粒子が配列した光重合性樹脂層に対して紫外線を少なくとも2方向から傾斜させて照射することにより光重合反応させ、表面に導電粒子が固定化された第1接続層を形成する工程;及び
工程(C′)
 第1接続層の導電粒子側表面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層を形成する工程。
(第1接続層を二段階の光重合反応で形成する場合)
工程(AA′)
 光重合性樹脂層に導電粒子を単層で配列させる工程;
工程(BB′)
 導電粒子が配列した光重合性樹脂層に対して紫外線を少なくとも2方向から傾斜させて照射することにより光重合反応させ、表面に導電粒子が仮固定化された仮第1接続層を形成する工程;
工程(CC′)
 仮第1接続層の導電粒子側表面に、熱カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層を形成する工程; 及び
工程(DD′)
 第2接続層と反対側から仮第1接続層に紫外線を照射することにより光重合反応させ、仮第1接続層を本硬化させて第1接続層を形成する工程。
 工程(CC)及び(CC′)で第2接続層の形成の際に使用する開始剤として熱重合開始剤に限定しているのは、異方性導電フィルムとしての製品ライフ、接続および接続構造体の安定性に悪影響が生じないようにするためである。つまり、第1接続層に紫外線を二段階に分けて照射する場合には、その工程上の制約から第2接続層は熱重合硬化性のものに限定せざるを得ない場合がある。なお、二段階照射を連続的に行う場合は、一段階と略同様の工程で形成することができるので、同等の作用効果が期待できる。
 また、本発明は、第1接続層の他面に、第2接続層と同様の構成の第3接続層を有している異方性導電フィルムの製造方法であって、以上の工程(A)~(C)に加えて工程(C)の後で(もしくは工程(A′)~(C′)に加えて工程(C′)の後で)、以下の工程(Z)を有する製造方法、または、以上の工程(AA)~(DD)に加えて工程(DD)の後で(もしくは工程(AA′)~(DD′)に加えて工程(DD′)の後で)、以下の工程(Z)を有する製造方法を提供する。
工程(Z)
 第1接続層の導電粒子側の反対面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程。
 更に、本発明は、第1接続層の他面に、第2接続層と略同様の構成の第3接続層を有している異方性導電フィルムの製造方法であって、以上の工程(A)~(C)に加えて工程(A)に先だって(もしくは工程(A′)~(C′)に加えて工程(A′)に先だって)、以下の工程(a)を有する製造方法、または以上の工程(AA)~(DD)に加えて、工程(AA)に先だって(もしくは工程(AA′)~(DD′)に加えて、工程(AA′)に先だって)以下の工程(a)を有する製造方法を提供する。
工程(a)
 光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程。
 なお、この工程(a)を有する製造方法の工程(A)もしくは工程(A′)又は工程(AA)もしくは工程(AA′)においては、光重合性樹脂層の他面に導電粒子を単層で配列させればよい。
 このような工程で第3接続層を設ける場合には、上述した理由から重合開始剤は熱反応によるものに限定されることが好ましい。しかしながら、第1接続層を設けた後に製品ライフや接続に悪影響を及ぼさない方法により、光重合開始剤を含む第2および第3接続層を設ければ、光重合開始剤を含んだ本発明の主旨に沿う異方性導電フィルムを作成することは、特に制限はされない。
 なお、第2接続層又は第3接続層のどちらかがタック層として機能する態様も本発明に包含される。
 加えて、本発明は、上述の異方性導電フィルムで第1電子部品を第2電子部品に異方性導電接続した接続構造体を提供する。
 本発明の第1の態様及び第2の態様の異方性導電フィルムは、光重合樹脂層からなる第1接続層と、その片面に形成された、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層とを有しており、更に、第1接続層の第2接続層側表面には、異方性導電接続用の導電粒子が単層で配列されている。このため、導電粒子を第1接続層にしっかりと固定化できる。しかも、本発明の第1の態様の異方性導電フィルムの場合、第1接続層の硬化率に関し、光照射を斜行させて行うので、その第2接続層側表面の硬化率よりも低い硬化率を有する領域が、第1接続層の厚み方向に斜行して存在している。この結果、異方性導電接続の際に、低い硬化率の領域及び導電粒子の流動の方向を斜行方向に揃えることができるので、初期導通特性や導通信頼性を損なうことなくショートの発生を大きく抑制することができる。また、本発明の第2の態様の異方性導電フィルムの場合、紫外線の照射を少なくとも2方向から傾斜させて行うので、第1接続層における導電粒子の下方(裏側)の領域は、導電粒子の存在のために紫外線が十分に照射されないので、相対的に硬化率が低くなる。換言すれば、第1接続層の片面(第2接続層側表面)の硬化率よりも、第1接続層の導電粒子近傍領域のうち、第1接続層の他面に相対的に近い領域の硬化率が低い。この結果、第1接続層における導電粒子の下方(裏側)の領域は良好な押し込み性を示し、結果的に、良好な導通信頼性、絶縁性、実装導電粒子捕捉率を実現することができる。なお、第1接続層の導電粒子近傍領域とは、導電粒子を囲む導電粒子径の0.2~5倍の幅の領域をいう。この第1接続層樹脂層の硬化率が相対的に低い領域は、第1接続層内にのみ存在することが望ましい。接続時の押し込み初動時に導電粒子が接続方向以外にずれることを防止するためである。
 なお、異方性導電接続が熱を利用する場合は、通常の異方性導電フィルムの接続方法と同様の方法になる。光によるものの場合は、接続ツールによる押し込みを、反応が終了するまでに行えばよい。この場合においても、接続ツール等は樹脂流動や粒子の押し込みを促進するため加熱されている場合が多い。また熱と光を併用する場合も、上記と同様に行えばよい。
図1は、本発明の第1の態様の異方性導電フィルムの断面図である。 図2は、本発明の第1の態様の異方性導電フィルムの製造工程(A)の説明図である。 図3Aは、本発明の第1の態様の異方性導電フィルムの製造工程(B)の説明図である。 図3Bは、本発明の第1の態様の異方性導電フィルムの製造工程(B)の説明図である。 図4Aは、本発明の第1の態様の異方性導電フィルムの製造工程(C)の説明図である。 図4Bは、本発明の第1の態様の異方性導電フィルムの製造工程(C)の説明図である。 図5は、本発明の第1の態様に包含される異方性導電フィルムの断面図である。 図6は、本発明の異方性導電フィルムの製造工程(AA)の説明図である。 図7Aは、本発明の第1の態様の異方性導電フィルムの製造工程(BB)の説明図である。 図7Bは、本発明の第1の態様の異方性導電フィルムの製造工程(BB)の説明図である。 図8Aは、本発明の第1の態様の異方性導電フィルムの製造工程(CC)の説明図である。 図8Bは、本発明の第1の態様の異方性導電フィルムの製造工程(CC)の説明図である。 図9Aは、本発明の第1の態様の異方性導電フィルムの製造工程(DD)の説明図である。 図9Bは、本発明の第1の態様の異方性導電フィルムの製造工程(DD)の説明図である。 図10は、本発明の第2の態様の異方性導電フィルムの断面図である。 図11は、本発明の第2の態様の異方性導電フィルムの製造工程(A′)の説明図である。 図12Aは、本発明の第2の態様の異方性導電フィルムの製造工程(B′)の説明図である。 図12Bは、本発明の第2の態様の異方性導電フィルムの製造工程(B′)の説明図である。 図13Aは、本発明の第2の態様の異方性導電フィルムの製造工程(C′)の説明図である。 図13Bは、本発明の第2の態様の異方性導電フィルムの製造工程(C′)の説明図である。 図14は、本発明の第2の態様の異方性導電フィルムの断面図である。 図15は、本発明の第2の態様の異方性導電フィルムの製造工程(AA′)の説明図である。 図16Aは、本発明の第2の態様の異方性導電フィルムの製造工程(BB′)の説明図である。 図16Bは、本発明の第2の態様の異方性導電フィルムの製造工程(BB′)の説明図である。 図17Aは、本発明の第2の態様の異方性導電フィルムの製造工程(CC′)の説明図である。 図17Bは、本発明の第2の態様の異方性導電フィルムの製造工程(CC′)の説明図である。 図18Aは、本発明の第2の態様の異方性導電フィルムの製造工程(DD′)の説明図である。 図18Bは、本発明の第2の態様の異方性導電フィルムの製造工程(DD′)の説明図である。
<<本発明の異方性導電フィルム>>
 以下、本発明の第1の態様及び第2の態様の異方性導電フィルム(以下、単に本発明の異方性導電フィルムと称することがある)の好ましい一例を詳細に説明する。
 図1に示す本発明の第1の態様の異方性導電フィルム1並びに図10に示す本発明の第2の態様の異方性導電フィルム1は、光重合性樹脂層を光重合させた光重合樹脂層からなる第1接続層2の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層3が形成された構造を有している。そして、第1接続層2の第2接続層3側の表面2aには、異方性導電接続のために導電粒子4が単層で配列、好ましくは均等に配列されている。ここで均等とは、導電粒子が平面方向に配列されている状態を意味する。この規則性は一定の間隔で設けられてもよい。
<第1接続層2>
 本発明の異方性導電フィルム1を構成する第1接続層2は、光カチオン、アニオン又はラジカル重合性樹脂層等の光重合性樹脂層を光重合させた光重合樹脂層であるから、導電粒子を固定化できる。また、重合しているので、異方性導電接続時に加熱されても樹脂が流れ難くなるので、ショートの発生を大きく抑制でき、従って導通信頼性と絶縁性とを向上させ、且つ実装粒子捕捉率も向上させることができる。特に好ましい第1接続層2は、アクリレート化合物と光ラジカル重合開始剤とを含む光ラジカル重合性樹脂層を光ラジカル重合させた光ラジカル重合樹脂層である。以下、第1接続層2が光ラジカル重合樹脂層である場合について説明する。
(アクリレート化合物)
 アクリレート単位となるアクリレート化合物としては、従来公知の光ラジカル重合性アクリレートを使用することができる。例えば、単官能(メタ)アクリレート(ここで、(メタ)アクリレートにはアクリレートとメタクリレートとが包含される)、二官能以上の多官能(メタ)アクリレートを使用することができる。本発明においては、接着剤を熱硬化性とするために、アクリル系モノマーの少なくとも一部に多官能(メタ)アクリレートを使用することが好ましい。
 第1接続層2におけるアクリレート化合物の含有量は、少なすぎると第2接続層3との粘度差を付けにくくなる傾向があり、多すぎると硬化収縮が大きく作業性が低下する傾向があるので、好ましくは2~70質量%、より好ましくは10~50質量%である。
(光ラジカル重合開始剤)
 光ラジカル重合開始剤としては、公知の光ラジカル重合開始剤の中から適宜選択して使用することができる。例えば、アセトフェノン系光重合開始剤、ベンジルケタール系光重合開始剤、リン系光重合開始剤等が挙げられる。
 光ラジカル重合開始剤の使用量は、アクリレート化合物100質量部に対し、少なすぎると光ラジカル重合が十分に進行せず、多すぎると剛性低下の原因となるので、好ましくは0.1~25質量部、より好ましくは0.5~15質量部である。
(導電粒子)
 導電粒子としては、従来公知の異方性導電フィルムに用いられているものの中から適宜選択して使用することができる。例えばニッケル、コバルト、銀、銅、金、パラジウムなどの金属粒子、金属被覆樹脂粒子などが挙げられる。2種以上を併用することもできる。
 導電粒子の平均粒径としては、小さすぎると配線の高さのばらつきを吸収できず抵抗が高くなる傾向があり、大きすぎてもショートの原因となる傾向があるので、好ましくは1~10μm、より好ましくは2~6μmである。
 このような導電粒子の第1接続層2中の粒子量は、少なすぎると実装導電粒子捕捉数が低下して異方性導電接続が難しくなり、多すぎるとショートすることが懸念されるので、好ましくは1平方mm当たり50~50000個、より好ましくは200~30000個である。
 第1接続層2には、必要に応じて、フェノキシ樹脂、エポキシ樹脂、不飽和ポリエステル樹脂、飽和ポリエステル樹脂、ウレタン樹脂、ブタジエン樹脂、ポリイミド樹脂、ポリアミド樹脂、ポリオレフィン樹脂などの膜形成樹脂を併用することができる。第2接続層および第3接続層にも、同様に併用してもよい。
 第1接続層2の層厚は、薄すぎると実装導電粒子捕捉率が低下する傾向があり、厚すぎると導通抵抗が高くなる傾向があるので、好ましくは1.0~6.0μm、より好ましくは2.0~5.0μmである。
 第1接続層2には、更に、エポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤とを含有させることもできる。この場合、後述するように、第2接続層3もエポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤とを含有する熱又は光カチオン若しくはアニオン重合性樹脂層とすることが好ましい。これにより、層間剥離強度を向上させることができる。エポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤については、第2接続層3で説明する。
 第1接続層2においては、図1(もしくは図10)に示すように、導電粒子4が、第2接続層3に食い込んでいる(換言すれば、導電粒子4が第1接続層2の表面に露出している)ことが好ましい。導電粒子がすべて第1接続層2に埋没していると、抵抗導通が高くなることが懸念されるからである。食い込みの程度は、小さすぎると実装導電粒子捕捉率が低下する傾向があり、大きすぎると導通抵抗が高くなる傾向があるので、好ましくは導電粒子の平均粒子径の10~90%、より好ましくは20~80%である。
 また、図1に示す本発明の第1の態様の異方性導電フィルムの第1接続層2において、光照射を斜行させて行うので、第2接続層側の第1接続層の表面の硬化率よりも低い硬化率を有する領域が、第1接続層の厚み方向に斜行して存在している。これにより、異方性導電接続の熱圧着の際に、第1接続層の領域2Xが排除され易くなり、導通信頼性が向上する。ここで、硬化率はビニル基の減少比率と定義される数値であり、第1接続層の領域2Xの硬化率は好ましくは40~80%であり、第1接続層の領域2Yの硬化率は好ましくは70~100%である。
 また、図10に示す本発明の第2の態様の異方性導電フィルムの第1接続層2において、第1接続層2の片面(第2接続層側表面)(第1接続層の領域2Y)の硬化率よりも、第1接続層2の導電粒子近傍領域のうち、第1接続層2の他面(最外表面2b)に相対的に近い領域(第1接続層の領域2X)の硬化率が低いことが好ましい。これにより、異方性導電接続の熱圧着の際に、第1接続層の領域2Xが排除され易くなり、導通信頼性が向上する。ここで、硬化率はビニル基の減少比率と定義される数値であり、第1接続層の領域2Xの硬化率は好ましくは40~80%であり、第1接続層の領域2Yの硬化率は好ましくは70~100%である。
 なお、第1接続層2の形成の際の光ラジカル重合は、一段階(即ち、一回の光照射)で行ってもよいが、二段階(即ち、二回の光照射)で行ってもよい。この場合、二段階目の光照射は、第1接続層2の片面に第2接続層3が形成された後に、酸素含有雰囲気(大気中)下で第1接続層2の他面側から行うことが好ましい。これにより、ラジカル重合反応が酸素阻害され、未硬化成分の表面濃度が高まり、タック性を向上させることができるという効果を期待できる。また、硬化を二段階で行うことで重合反応も複雑化するため、樹脂や粒子の流動性の精緻な制御が可能となることも期待できる。
 このような二段階の光ラジカル重合における第1接続層の領域2Xの第一段階における硬化率は好ましくは10~50%であり、第二段階における硬化率は好ましくは40~80%であり、第1接続層の領域2Yの第一段階における硬化率は好ましくは30~90%であり、第二段階における硬化率は好ましくは70~100%である。
 また、第1接続層2の形成の際の光ラジカル重合反応が二段階で行われる場合、ラジカル重合開始剤として1種類だけ使用することもできるが、ラジカル反応を開始する波長帯域が異なる2種類の光ラジカル重合開始剤を使用することがタック性向上のために好ましい。例えば、LED光源からの波長365nmの光でラジカル反応を開始する光ラジカル重合開始剤(例えば、IRGACURE369、BASFジャパン(株))と、高圧水銀ランプ光源からの光でラジカル反応を開始する光ラジカル重合開始剤(例えば、IRGACURE2959、BASFジャパン(株))とを併用することが好ましい。このように2種類の異なる光ラジカル重合開始剤を使用することで樹脂の結合が複雑化するため、接続時の樹脂の熱流動の挙動をより精緻に制御することが可能になる。これは異方性導電接続の押し込み時に、粒子は厚み方向にかかる力は受け易くなるが、面方向への流動は抑制されるため本発明の効果がより発現しやすくなるからである。
 また、第1接続層2のレオメーターで測定した際の最低溶融粘度は、第2接続層3の最低溶融粘度よりも高いこと、具体的には[第1接続層2の最低溶融粘度(mPa・s)]/[第2接続層3の最低溶融粘度(mPa・s)]の数値が、好ましくは1~1000、より好ましくは4~400である。なお、それぞれの好ましい最低溶融粘度は、前者については100~100000mPa・s、より好ましくは500~50000mPa・sである。後者については好ましくは0.1~10000mPa・s、より好ましくは0.5~1000mPa・sである。
 第1接続層2の形成は、光ラジカル重合性アクリレートと光ラジカル重合開始剤とを含有する光ラジカル重合性樹脂層に、フィルム転写法、金型転写法、インクジェット法、静電付着法等の手法により導電粒子を付着させ、紫外線を導電粒子側、その反対側、もしくは両側から照射することにより行うことができる。特に、紫外線を導電粒子側からのみ照射することが、第1接続層の領域2Xの硬化率を相対的に低く抑制することができる点から好ましい。
<第2接続層3>
 第2接続層3は、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層、好ましくはエポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤とを含有する熱又は光カチオン若しくはアニオン重合性樹脂層、又はアクリレート化合物と熱又は光ラジカル重合開始剤とを含有する熱又は光ラジカル重合性樹脂層からなる。ここで、第2接続層3を熱重合性樹脂層から形成することは、第1接続層2を形成する際の紫外線照射により第2接続層3の重合反応が生じないため、生産の簡便性および品質安定性の上では望ましい。
 第2接続層3が、熱又は光カチオン若しくはアニオン重合性樹脂層である場合、更に、アクリレート化合物と熱又は光ラジカル重合開始剤とを含有することができる。これにより第1接続層2と層間剥離強度を向上させることができる。
(エポキシ化合物)
 第2接続層3がエポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤とを含有する熱又は光カチオン若しくはアニオン重合性樹脂層である場合、エポキシ化合物としては、分子内に2つ以上のエポキシ基を有する化合物もしくは樹脂が好ましく挙げられる。これらは液状であっても、固体状であってもよい。
(熱カチオン重合開始剤)
 熱カチオン重合開始剤としては、エポキシ化合物の熱カチオン重合開始剤として公知のものを採用することができ、例えば、熱により、カチオン重合性化合物をカチオン重合させ得る酸を発生するものであり、公知のヨードニウム塩、スルホニウム塩、ホスホニウム塩、フェロセン類等を用いることができ、温度に対して良好な潜在性を示す芳香族スルホニウム塩を好ましく使用することができる。
 熱カチオン重合開始剤の配合量は、少なすぎても硬化不良となる傾向があり、多すぎても製品ライフが低下する傾向があるので、エポキシ化合物100質量部に対し、好ましくは2~60質量部、より好ましくは5~40質量部である。
(熱アニオン重合開始剤)
 熱アニオン重合開始剤としては、エポキシ化合物の熱アニオン重合開始剤として公知のものを採用することができ、例えば、熱により、アニオン重合性化合物をアニオン重合させ得る塩基を発生するものであり、公知の脂肪族アミン系化合物、芳香族アミン系化合物、二級又は三級アミン系化合物、イミダゾール系化合物、ポリメルカプタン系化合物、三フッ化ホウ素-アミン錯体、ジシアンジアミド、有機酸ヒドラジッド等を用いることができ、温度に対して良好な潜在性を示すカプセル化イミダゾール系化合物を好ましく使用することができる。
 熱アニオン重合開始剤の配合量は、少なすぎても硬化不良となる傾向があり、多すぎても製品ライフが低下する傾向があるので、エポキシ化合物100質量部に対し、好ましくは2~60質量部、より好ましくは5~40質量部である。
(光カチオン重合開始剤及び光アニオン重合開始剤)
 エポキシ化合物用の光カチオン重合開始剤又は光アニオン重合開始剤としては、公知のものを適宜使用することができる。
(アクリレート化合物)
 第2接続層3がアクリレート化合物と熱又は光ラジカル重合開始剤とを含有する熱又は光ラジカル重合性樹脂層である場合、アクリレート化合物としては、第1接続層2に関して説明したものの中から適宜選択して使用することができる。
(熱ラジカル重合開始剤)
 また、熱ラジカル重合開始剤としては、例えば、有機過酸化物やアゾ系化合物等が挙げられるが、気泡の原因となる窒素を発生しない有機過酸化物を好ましく使用することができる。
 熱ラジカル重合開始剤の使用量は、少なすぎると硬化不良となり、多すぎると製品ライフの低下となるので、アクリレート化合物100質量部に対し、好ましくは2~60質量部、より好ましくは5~40質量部である。
(光ラジカル重合開始剤)
 アクリレート化合物用の光ラジカル重合開始剤としては、公知の光ラジカル重合開始剤を使用することができる。
 光ラジカル重合開始剤の使用量は、少なすぎると硬化不良となり、多すぎると製品ライフの低下となるので、アクリレート化合物100質量部に対し、好ましくは2~60質量部、より好ましくは5~40質量部である。
(第3接続層5)
 以上、図1及び図10の2層構造の異方性導電フィルムについて説明したが、図5及び図14に示すように、第1接続層2の他面に第3接続層5が形成されていてもよい。これにより、層全体の流動性をより精緻に制御することが可能となるという効果が得られる。ここで、第3接続層5としては、前述した第2接続層3と同じ構成としてもよい。即ち、第3接続層5は、第2接続層3と同様に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなるものである。このような第3接続層5は、第1接続層の片面に第2接続層を形成した後に、第1接続層の他面に形成してもよく、第2接続層の形成前に、第1接続層もしくはその前駆体である光重合性樹脂層の他面(第2接続層が形成されない面)に予め第3接続層を形成しておいてもよい。
<<本発明の第1の態様の異方性導電フィルムの製造方法>>
 本発明の第1の態様の異方性導電フィルムの製造方法には、一段階の光重合反応を行う製造方法と、二段階の光重合反応を行う製造方法が挙げられる。
<一段階の光重合反応を行う製造方法>
 図1(図4B)の異方性導電フィルムを一段階で光重合させて製造する一例を説明する。この製造例は、以下の工程(A)~(C)を有する。
(工程(A))
 図2に示すように、必要に応じて剥離フィルム30上に形成した、光重合性樹脂層31に、単層で導電粒子4を配列させる。導電粒子4の配列の手法としては、特に制限はなく、特許第4789738号の実施例1の無延伸ポリプロピレンフィルムに2軸延伸操作を利用する方法や、特開2010-33793号公報の金型を使用する方法等を採用することができる。なお、配列の程度としては、接続対象のサイズ、導通信頼性、絶縁性、実装導電粒子捕捉率等を考慮し、2次元的に互いに1~100μm程度離隔して配列されることが好ましい。
(工程(B))
 次に、図3Aに示すように、導電粒子4が配列した光重合性樹脂層31に対して、LED光源などを用いて、導電粒子側から紫外線(UV)を傾斜させて照射することにより光重合反応させ、表面に導電粒子4が固定化された第1接続層2を形成する。これにより、図3Bに示すように、導電粒子4と第1接続層2の最外表面との間に位置する斜行した第1接続層の領域2Xの硬化率を、互いに隣接する導電粒子4間に位置する第1接続層の領域2Yの硬化率よりも低くすることができる。照射の際、必要に応じて紫外線をパルス状に照射してもよく、シャッターを設けて照射してもよい。このようにすることで、粒子の裏側の硬化性は確実に低くなり接合時の押し込みを容易にし、且つ導電粒子の流動方向を斜行方向に揃えることができ、複数の導電粒子が過度に連結してしまうことを防止することができ、ショートの発生を抑制することができる。
 紫外線を傾斜させて照射するとは、光重合性樹脂層31に対し傾斜角θをもって紫外線を照射することである。この傾斜角θは0°<θ<90°好ましくは30°≦θ≦60°である。この場合、異方性導電フィルムの長手方向に直交する方向に傾斜させることが好ましい。このようにすると、導電粒子の流動の方向とバンプの長手方向(即ち、異方性導電フィルムの幅方向)とを一致させることができる。この場合、異方性導電フィルムの長手方向の光重合性樹脂層の左半分をマスクし、右半分に対し、異方性導電フィルムの右辺に向かって流動が生じるように紫外線を傾斜させて照射し、次に、右半分をマスクし、左半分に対し、異方性導電フィルムの左辺に向かって流動が生じるように紫外線を傾斜させて照射することが好ましい。
(工程(C))
 次に、図4Aに示すように、第1接続層2の導電粒子4側表面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層3を形成する。具体的な一例として、剥離フィルム40に常法により形成された第2接続層3を、第1接続層2の導電粒子4側表面に載せ、過大な熱重合が生じない程度に熱圧着する。そして剥離フィルム30と40とを取り除くことにより図4Bの異方性導電フィルムを得ることができる。
 なお、図5の異方性導電フィルム100は、工程(C)の後で、以下の工程(Z)を実施することにより得ることができる。
(工程(Z))
 第1接続層の導電粒子側の反対面に、好ましくは第2接続層と同様に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する。これにより図5の異方性導電フィルムを得ることができる。
 また、図5の異方性導電フィルム100は、工程(Z)を行うことなく、工程(A)に先だって、以下の工程(a)を実施することでも得ることができる。
(工程(a))
 この工程は、光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程である。この工程(a)に引き続き、工程(A)、(B)及び(C)を実施することにより図5の異方性導電フィルム100を得ることができる。但し、工程(A)において、光ラジカル重合性樹脂層の他面に導電粒子を単層で配列させる。
(二段階の光ラジカル重合反応を行う製造方法)
 次に、図1(図4B)の異方性導電フィルムを二段階で光重合させて製造する一例を説明する。この製造例は、以下の工程(AA)~(DD)を有する。
(工程(AA))
 図6に示すように、必要に応じて剥離フィルム30上に形成した、光重合性樹脂層31に、単層で導電粒子4を配列させる。導電粒子4の配列の手法としては、特に制限はなく、特許第4789738号の実施例1の無延伸ポリプロピレンフィルムに2軸延伸操作を利用する方法や、特開2010-33793号公報の金型を使用する方法等を採用することができる。なお、配列の程度としては、接続対象のサイズ、導通信頼性、絶縁性、実装導電粒子捕捉率等を考慮し、2次元的に互いに1~100μm程度離隔して配列されることが好ましい。
(工程(BB))
 次に、図7Aに示すように、導電粒子4が配列した光重合性樹脂層31に対して、導電粒子側から紫外線(UV)を傾斜させて照射することにより光ラジカル重合反応させ、表面に導電粒子4が仮固定化された仮第1接続層20を形成する。これにより、図7Bに示すように、導電粒子4と仮第1接続層20の最外表面との間に位置する斜行した仮第1接続層の領域2Xの硬化率を、互いに隣接する導電粒子4間に位置する仮第1接続層の領域2Yの硬化率よりも低くすることができる。
(工程(CC))
 次に、図8Aに示すように、仮第1接続層20の導電粒子4側表面に、熱カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層3を形成する。具体的な一例として、剥離フィルム40に常法により形成された第2接続層3を、第1接続層2の導電粒子4側表面に載せ、過大な熱重合が生じない程度に熱圧着する。そして剥離フィルム30と40とを取り除くことにより図8Bの仮異方性導電フィルム50を得ることができる。
(工程(DD))
 次に、図9Aに示すように、LED光源などを用いて、第2接続層3と反対側から仮第1接続層20に紫外線を照射することにより光ラジカル重合反応させ、仮第1接続層20を本硬化させて第1接続層2を形成する。これにより、図9Bの異方性導電フィルム1を得ることができる。この工程における紫外線の照射は、仮第1接続層に対し垂直方向から行うことが好ましい。また、第1接続層の領域2Xと2Yの硬化率差が消失しないように、マスクを介して照射したり、照射部位により照射光量に差を設けることが好ましい。
 なお、2段階で光ラジカル重合させた場合、図5の異方性導電フィルム100は、工程(DD)の後で、以下の工程(Z)を実施することにより得ることができる。
(工程(Z))
 第1接続層の導電粒子側の反対面に、好ましくは第2接続層と同様に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する。これにより図5の異方性導電フィルムを得ることができる。
 また、図5の異方性導電フィルム100は、工程(Z)を行うことなく、工程(AA)に先だって、以下の工程(a)を実施することでも得ることができる。
(工程(a))
 この工程は、光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程である。この工程(a)に引き続き、工程(AA)~(DD)を実施することにより図5の異方性導電フィルム100を得ることができる。但し、工程(AA)において、光重合性樹脂層の他面に導電粒子を単層で配列させる。この場合、第2接続層の形成の際に使用する重合開始剤としては、熱重合開始剤を適用することが好ましい。光重合開始剤の場合は、工程上、異方性導電フィルムとしての製品ライフ、接続および接続構造体の安定性に悪影響を及ぼすことが懸念される。
<<本発明の第2の態様の異方性導電フィルムの製造方法>>
 本発明の第2の態様の異方性導電フィルムの製造方法には、第1の態様の異方性導電フィルムの製造方法と同様に、一段階の光重合反応を行う製造方法と、
二段階の光重合反応を行う製造方法が挙げられる。
<一段階の光重合反応を行う製造方法>
 図10(図13B)の異方性導電フィルムを一段階で光重合させて製造する一例を説明する。この製造例は、以下の工程(A′)~(C′)を有する。
(工程(A′))
 図11に示すように、必要に応じて剥離フィルム30上に形成した、光重合性樹脂層31に、単層で導電粒子4を配列させる。導電粒子4の配列の手法としては、特に制限はなく、特許第4789738号の実施例1の無延伸ポリプロピレンフィルムに2軸延伸操作を利用する方法や、特開2010-33793号公報の金型を使用する方法等を採用することができる。なお、配列の程度としては、接続対象のサイズ、導通信頼性、絶縁性、実装導電粒子捕捉率等を考慮し、2次元的に互いに1~100μm程度離隔して配列されることが好ましい。
(工程(B′))
 次に、図12Aに示すように、導電粒子4が配列した光重合性樹脂層31に対して、LED光源などを用いて、導電粒子側から紫外線(UV)を少なくとも2方向から傾斜させて照射することにより光重合反応させ、表面に導電粒子4が固定化された第1接続層2を形成する。これにより、図12Bに示すように、導電粒子4と第1接続層2の最外表面との間に位置する第1接続層の領域2X(換言すれば、第1接続層の導電粒子裏側領域)の硬化率を、互いに隣接する導電粒子4間に位置する第1接続層の領域2Yの硬化率よりも低くすることができる。換言すれば、第1接続層2において、第2接続層側の第1接続層2の領域2Yの硬化率よりも、第1接続層2の導電粒子近傍領域のうち、第1接続層2の他面(最外表面2b)に相対的に近い領域(第1接続層の領域2X)の硬化率を低くすることができる。このようにすることで、第1接続層の導電粒子裏側領域の硬化率は確実に低くなり、接合時の押し込みを容易にし、且つ導電粒子の流動を防ぐことも可能となる。
 「少なくとも2方向から傾斜させて」における方向とは、互いに交わる方向であり、それらの方向が同一面内になくてもよい。2方向の場合には、光重合性樹脂層31に対して垂直な平面内に線対称で傾斜させることが好ましい。傾斜角θは、光重合性樹脂層31に
対し、好ましくは0°<θ≦90°、より好ましくは30°≦θ≦60°である。なお、複数の方向は好ましくは同じ傾斜角をもっているが、異なる傾斜角を有していてもよい。例えば、一方の傾斜角θが30°で他方の傾斜角θが60°である場合や、また、一方が
90°で他方が30°である場合等が挙げられる。このように、2方向以上から傾斜させて光照射することで、相対的に硬化率が低い領域である第1接続層の領域2Xを導電粒子の裏側領域に局在させることができる。また2方向の傾斜角度を非対称にすることで、第1接続層の領域2Xの位置を制御することもできる。
(工程(C′))
 次に、図13Aに示すように、第1接続層2の導電粒子4側表面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層3を形成する。具体的な一例として、剥離フィルム40に常法により形成された第2接続層3を、第1接続層2の導電粒子4側表面に載せ、過大な熱重合が生じない程度に熱圧着する。そして剥離フィルム30と40とを取り除くことにより図13Bの異方性導電フィルムを得ることができる。
 なお、図14の異方性導電フィルム100は、工程(C′)の後で、本発明の第1の態様の異方性導電フィルムの製造方法と同様に、以下の工程(Z)を実施することにより得ることができる。
(工程(Z))
 第1接続層の導電粒子側の反対面に、好ましくは第2接続層と同様に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する。これにより図14の異方性導電フィルムを得ることができる。
 また、図14の異方性導電フィルム100は、本発明の第1の態様の異方性導電フィルムの製造方法と同様に、工程(Z)を行うことなく、工程(A′)に先だって、以下の工程(a)を実施することでも得ることができる。
(工程(a))
 この工程は、光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程である。この工程(a)に引き続き、工程(A′)、(B′)及び(C′)を実施することにより図14の異方性導電フィルム100を得ることができる。但し、工程(A′)において、光重合性樹脂層の他面に導電粒子を単層で配列させる。
(二段階の光重合反応を行う製造方法)
 次に、図10(図13B)の異方性導電フィルムを二段階で光重合させて製造する一例を説明する。この製造例は、以下の工程(AA′)~(DD′)を有する。
(工程(AA′))
 図15に示すように、必要に応じて剥離フィルム30上に形成した、光重合性樹脂層31に、単層で導電粒子4を配列させる。導電粒子4の配列の手法としては、特に制限はなく、特許第4789738号の実施例1の無延伸ポリプロピレンフィルムに2軸延伸操作を利用する方法や、特開2010-33793号公報の金型を使用する方法等を採用することができる。なお、配列の程度としては、接続対象のサイズ、導通信頼性、絶縁性、実装導電粒子捕捉率等を考慮し、2次元的に互いに1~100μm程度離隔して配列されることが好ましい。
(工程(BB′))
 次に、図16Aに示すように、導電粒子4が配列した光重合性樹脂層31に対して、導電粒子側から紫外線(UV)を少なくとも2方向から傾斜させて照射することにより光重合反応させ、表面に導電粒子4が仮固定化された仮第1接続層20を形成する。これにより、図16Bに示すように、導電粒子4と仮第1接続層20の最外表面との間に位置する仮第1接続層の領域2Xの硬化率を、互いに隣接する導電粒子4間に位置する仮第1接続層の領域2Yの硬化率よりも低くすることができる。換言すれば、第1接続層20において、仮第1接続層20の片面(第2接続層側表面)(仮第1接続層の領域2Y)の硬化率よりも、仮第1接続層20の導電粒子近傍領域のうち、仮第1接続層20の他面(最外表面2b)に相対的に近い領域(仮第1接続層の領域2X)の硬化率を低くすることができる。
(工程(CC′))
 次に、図17Aに示すように、仮第1接続層20の導電粒子4側表面に、熱カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層3を形成する。具体的な一例として、剥離フィルム40に常法により形成された第2接続層3を、第1接続層2の導電粒子4側表面に載せ、過大な熱重合が生じない程度に熱圧着する。そして剥離フィルム30と40とを取り除くことにより図17Bの仮異方性導電フィルム50を得ることができる。
(工程(DD′))
 次に、図18Aに示すように、LED光源などを用いて、第2接続層3と反対側から仮第1接続層20に紫外線を照射することにより光重合反応させ、仮第1接続層20を本硬化させて第1接続層2を形成する。これにより、図18Bの異方性導電フィルム1を得ることができる。この工程における紫外線の照射は、仮第1接続層20に対し垂直方向から行うことが好ましい。また、第1接続層の領域2Xと2Yの硬化率差が消失しないように、マスクを介して照射したり、照射部位により照射光量に差を設けることが好ましい。
 なお、2段階で光重合させた場合、図14の異方性導電フィルム100は、本発明の第1の態様の異方性導電フィルムの製造方法と同様に、工程(DD′)の後で、以下の工程(Z)を実施することにより得ることができる。
(工程(Z))
 第1接続層の導電粒子側の反対面に、好ましくは第2接続層と同様に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する。これにより図5の異方性導電フィルムを得ることができる。
 また、図14の異方性導電フィルム100は、本発明の第1の態様の異方性導電フィルムの製造方法と同様に、工程(Z)を行うことなく、工程(AA′)に先だって、以下の工程(a)を実施することでも得ることができる。
(工程(a))
 この工程は、光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程である。この工程(a)に引き続き、工程(AA′)~(DD′)を実施することにより図14の異方性導電フィルム100を得ることができる。但し、工程(AA′)において、光重合性樹脂層の他面に導電粒子を単層で配列させる。この場合、第2接続層の形成の際に使用する重合開始剤としては、熱重合開始剤を適用することが好ましい。光重合開始剤の場合は、工程上、異方性導電フィルムとしての製品ライフ、接続および接続構造体の安定性に悪影響を及ぼすことが懸念される。
<<接続構造体>>
 このようにして得られた本発明の異方性導電フィルムは、ICチップ、ICモジュールなどの第1電子部品と、フレキシブル基板、ガラス基板などの第2電子部品とを異方性導電接続する際に好ましく適用することができる。このようにして得られる接続構造体も本発明の一部である。なお、異方性導電フィルムの第1接続層側をフレキシブル基板等の第2電子部品側に配し、第2接続層側をICチップなどの第1電子部品側に配することが、導通信頼性を高める点から好ましい。
 以下、本発明を実施例により具体的に説明する。
  実施例1~3、比較例1
 特許第4789738号の実施例1(導電粒子の均等配置)の操作に準じて導電粒子の配列を行うとともに、表1に示す配合(質量部)に従って第1接続層と第2接続層とが積層された2層構造の異方性導電フィルムを作成した。
(第1接続層)
 具体的には、まず、アクリレート化合物及び光ラジカル重合開始剤等を酢酸エチル又はトルエンにて固形分が50質量%となるように混合液を調製した。この混合液を、厚さ50μmのポリエチレンテレフタレートフィルムに、乾燥厚が5μmとなるように塗布し、80℃のオーブン中で5分間乾燥することにより、第1接続層の前駆層である光ラジカル重合性樹脂層を形成した。
 次に、得られた光ラジカル重合性樹脂層に対し、平均粒子径4μmの導電粒子(Ni/Auメッキ樹脂粒子、AUL704、積水化学工業(株))を、互いに4μm離隔して単層で配列させた。更に、この導電粒子側から光ラジカル重合性樹脂層に対し、LED光源から波長365nm、積算光量4000mJ/cmの紫外線を、表1に記載の角度で、異方性導電フィルムの長手方向に直交する方向に照射することにより、表面に導電粒子が固定された第1接続層を形成した。比較例1では、導電粒子側から光ラジカル重合性樹脂層に対し90°の角度で紫外線を照射した。
(第2接続層)
 熱硬化性樹脂及び潜在性硬化剤等を酢酸エチル又はトルエンにて固形分が50質量%となるように混合液を調製した。この混合液を、厚さ50μmのポリエチレンテレフタレートフィルムに、乾燥厚が12μmとなるように塗布し、80℃のオーブン中で5分間乾燥することにより、第2接続層を形成した。
(異方性導電フィルム)
 このようにして得られた第1接続層と第2接続層とを、導電粒子が内側となるようにラミネートすることにより異方性導電フィルムを得た。
(接続構造サンプル体)
 得られた異方性導電フィルムを用いて、0.5×1.8×20.0mmの大きさのICチップ(バンプサイズ30×85μm:バンプ高さ15μm、バンプピッチ50μm)を、0.5×50×30mmの大きさのコーニング社製のガラス配線基板(1737F)に、50℃、5MPa、1秒という条件で仮貼りし、更に、180℃、80MPa、5秒という条件で実装して接続構造サンプル体を得た。
(試験評価)
 得られた接続構造サンプル体について、以下に説明するように、「実装導電粒子捕捉効率」、「異方性導電接続時の導電粒子の方向性」、「初期導通抵抗」、「エージング後の導通抵抗」、「ショート発生率」を試験・評価した。得られた結果を表1に示す。
「実装導電粒子捕捉率」
 実装の際、加熱加圧前の接続構造サンプル体のバンプ上に存在する理論粒子量に対する加熱加圧後に実際に捕捉されている粒子量の割合を求めた。粒子量は、光学顕微鏡を使用してカウントした。実用上50%以上であることが望ましい。
「異方性導電接続時の導電粒子の方向性」
 異方性導電接続後のバンプに捕捉されている導電粒子を光学顕微鏡により観測し、LEDの傾斜により流動方向の均一性が得られるかを調べた。2個以上連結した導電粒子の群を100ユニット(計200個)カウントし、これらのうち、70%以上で方向が揃っているものを「均一」とし、それ未満のものを「ランダム」としている。
「初期導通抵抗」
 接続構造サンプル体の導通抵抗値を、デジタルマルチメーター(アジレント・テクノロジー(株))を用いて測定した。
「エージング後の導通抵抗」
 接続構造サンプル体を85℃、85%RHの高温高湿環境下に500時間放置した後の導通抵抗をデジタルマルチメーター(アジレント・テクノロジー(株))を用いて測定した。実用上、4Ω以下であることが望ましい。
「ショート発生率」
 7.5μmスペースの櫛歯TEGパターンのショート発生率を求めた。実用上100ppm以下であれば、絶縁性が良好と判断できる。
Figure JPOXMLDOC01-appb-T000001
 表1から、実施例1~3の異方性導電フィルムについては、その製造時にUV照射を傾斜させて行ったため、比較例1よりも実装導電粒子捕捉率が僅かに向上するだけでなく、異方性導電接続時の導電粒子の流動の方向性を均一に揃えることができたことがわかる。この結果、比較例に比べ、ショートの発生率を大きく低減できたことがわかる。
  実施例4~9、比較例2~3
 特許第4789738号の実施例1の操作に準じて導電粒子の配列を行うとともに、表1に示す配合(質量部)に従って第1接続層と第2接続層とが積層された2層構造の異方性導電フィルムを作成した。
(第1接続層)
 具体的には、まず、アクリレート化合物及び光ラジカル重合開始剤等を酢酸エチル又はトルエンにて固形分が50質量%となるように混合液を調製した。この混合液を、厚さ50μmのポリエチレンテレフタレートフィルムに、乾燥厚が5μmとなるように塗布し、80℃のオーブン中で5分間乾燥することにより、第1接続層の前駆層である光ラジカル重合性樹脂層を形成した。
 次に、得られた光ラジカル重合性樹脂層に対し、平均粒子径4μmの導電粒子(Ni/Auメッキ樹脂粒子、AUL704、積水化学工業(株))を、互いに4μm離隔して単層で配列させた。更に、この導電粒子側から光ラジカル重合性樹脂層に対し、LED光源から波長365nm、積算光量4000mJ/cmの紫外線を、表2に示した方向と角度で照射することにより、表面に導電粒子が固定された第1接続層を形成した。
 なお、実施例4~6においては、導電粒子側から光ラジカル重合性樹脂層に対し、垂直な平面内でそれぞれ60°の角度で且つ挟角が60°となる2方向から紫外線を照射した。実施例7においては、導電粒子側から光ラジカル重合性樹脂層に対し、垂直な平面内で60°と30°の角度で且つ挟角が90°となる2方向から紫外線を照射した。実施例8においては、導電粒子側から光ラジカル重合性樹脂層に対し、垂直な平面内で90°と30°の角度で且つ挟角が60°となる2方向から紫外線を照射した。実施例9においては、導電粒子側から光ラジカル重合性樹脂層に対し、垂直な平面内で90°の方向と60°の角度で且つ挟角が30°となる2方向から紫外線を照射した。比較例2では、光ラジカル重合性樹脂層の裏面(導電粒子が配列されていない側の表面)から90°の角度で紫外線を照射した。比較例3では、反対に、導電粒子側から光ラジカル重合性樹脂層に対し90°で一方向で紫外線を照射した。
(第2接続層)
 熱硬化性樹脂及び潜在性硬化剤等を酢酸エチル又はトルエンにて固形分が50質量%となるように混合液を調製した。この混合液を、厚さ50μmのポリエチレンテレフタレートフィルムに、乾燥厚が12μmとなるように塗布し、80℃のオーブン中で5分間乾燥することにより、第2接続層を形成した。
(異方性導電フィルム)
 このようにして得られた第1接続層と第2接続層とを、導電粒子が内側となるようにラミネートすることにより異方性導電フィルムを得た。
(接続構造サンプル体)
 得られた異方性導電フィルムを用いて、0.5×1.8×20.0mmの大きさのICチップ(バンプサイズ30×85μm:バンプ高さ15μm、バンプピッチ50μm)を、0.5×50×30mmの大きさのコーニング社製のガラス配線基板(1737F)に、50℃、5MPa、1秒という条件で仮貼りし、更に、180℃、80MPa、5秒という条件で実装して接続構造サンプル体を得た。
(試験評価)
 得られた接続構造サンプル体について、接続時のバンプ平面内における導電粒子の挙動を調べるべく、「第1接続層の90%以上の硬化率となっている厚み割合(%)」、「バンプエッジに載っている導電粒子の割合(%)」、及び「バンプ平面内における平均導電粒子間距離(μm)」を以下に説明するように調べた。得られた結果を表2に示す。
「第1接続層の90%以上の硬化率となっている厚み割合(%)」
 接続構造サンプル体から、断面研磨にて第1接続層の断面を露出させ、露出した導電粒子の近傍におけるビニル基の有無をIR測定し、全厚に対する硬化率が90%以上となっている領域の厚みの割合を求めた。
「バンプエッジに載っている導電粒子の割合(%)」
 接続構造サンプル体を作成する際、仮貼り時にバンプのエッジ(バンプの6μm幅の外縁部)に載っている導電粒子数を光学顕微鏡を用いてカウントし、また、実装後に同じ外縁部に存在している導電粒子数をカウントし、仮貼り時の導電粒子数に対する実装後の導電粒子数の割合を求めた。
「バンプ平面内における平均導電粒子間距離(μm)」
 接続構造体サンプル体のバンプ平面内の100個の導電粒子について、導電粒子の相互間距離を光学顕微鏡を用いて測定し、測定結果の算術平均を求め、平均導電粒子間距離とした。
Figure JPOXMLDOC01-appb-T000002
 表2から、実施例4~9の異方性導電フィルムについては、第1接続層における導電粒子近接領域の下方(第2接続層と反対側の第1接続層表面方向)の領域において、硬化率が90%以上となっている厚みの割合が20~90%であるため、実装時に導電粒子を位置ずれが生じないように、換言すれば、平面方向への動きを抑制しながら良好に押し込むことができ、その結果、バンプ上の導電粒子間距離が変化し難く、バンプエッジから導電粒子がバンプ外に流れ出してしまう割合が大幅に減少したことがわかる。このことから、良好な導通信頼性、良好な絶縁性、及び良好な実装導電粒子捕捉率が実現できたことがわかる。
 それに対し、比較例2の異方性導電フィルムについては、第1接続層の全体が90%以上の硬化率となっているため、平面方向への動きを抑制しながら良好に押し込むことができず、その結果、バンプ上の導電粒子間距離が拡がり、バンプエッジから導電粒子がバンプ外に流れ出してしまう割合が大幅に増加したことがわかる。比較例3の異方性導電フィルムについては、2方向からの紫外線照射でなく、導電粒子側から紫外線を90°方向(垂直方向)という一方向から照射したので、導電粒子下方において、90%以上の硬化率となっている割合が10%未満と小さすぎるので、実施例4~6に比べて、平面方向への動きを抑制しながら良好に押し込むことができず、その結果、バンプ上の導電粒子間距離が拡がり、バンプエッジから導電粒子がバンプ外に流れ出してしまう割合が大幅に増加したことがわかる。
 本発明の第1の態様の異方性導電フィルムは、光ラジカル重合性樹脂層を光ラジカル重合させた第1接続層と、熱又は光カチオン若しくはアニオン重合性樹脂層、又は好ましくはアクリレート化合物と熱又は光ラジカル重合開始剤とを含有する熱又は光ラジカル重合性樹脂層とからなる第2接続層とが積層された2層構造を有しており、更に、第1接続層の第2接続層側表面には、異方性導電接続用の導電粒子が単層で配列されている。しかも、第1接続層の硬化率に関し、片面(第2接続層側表面)の硬化率よりも低い硬化率を有する領域が、第1接続層の厚み方向に斜行して存在している。このため、異方性導電接続の際、導電粒子の流動の方向を均一化することができる。よって良好な導通信頼性、絶縁性、実装導電粒子捕捉率を示す。
 本発明の第2の態様の異方性導電フィルムは、光重合樹脂層からなる第1接続層と、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層とが積層された2層構造を有しており、更に、第1接続層の第2接続層側表面には、異方性導電接続用の導電粒子が単層で配列されている。しかも、第1接続層の片面(第2接続層側表面)の硬化率よりも、第1接続層の導電粒子近傍領域のうち、第1接続層の他面に相対的に近い領域の硬化率が低い。このため、良好な導通信頼性、絶縁性、実装導電粒子捕捉率を示す。よって、ICチップなどの電子部品の配線基板への異方性導電接続に有用である。このような電子部品の配線は狭小化が進んでおり、本発明はこのような技術的進歩に貢献する場合において、特にその効果を発現することになる。
1、100 異方性導電フィルム
2 第1接続層
2a 第1接続層の第2接続層側の表面
2b 第2接続層の最外表面
2X、2Y (仮)第1接続層の領域
3 第2接続層
4 導電粒子
5 第3接続層
30、40 剥離フィルム
20 仮第1接続層
31 光重合性樹脂層
50 仮異方性導電フィルム

Claims (25)

  1.  第1接続層とその片面に形成された第2接続層とを有する異方性導電フィルムであって、
     第1接続層が、光重合樹脂層であり、
     第2接続層が、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層であり、
     第1接続層の該片面に、異方性導電接続用の導電粒子が単層で配列されており、
     第1接続層の硬化率に関し、該片面の硬化率よりも低い硬化率を有する領域が、第1接続層の厚み方向に斜行して存在している
    ことを特徴とする異方性導電フィルム。
  2.  第1接続層とその片面に形成された第2接続層とを有する異方性導電フィルムであって、
     第1接続層が、光重合樹脂層であり、
     第2接続層が、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層であり、
     第1接続層の該片面に、異方性導電接続用の導電粒子が単層で配列されており、
     第1接続層の該片面の硬化率よりも、第1接続層の導電粒子近傍領域のうち、第1接続層の他面に相対的に近い領域の硬化率が低い
    ことを特徴とする異方性導電フィルム。
  3.  第1接続層が、アクリレート化合物と光ラジカル重合開始剤とを含む光ラジカル重合性樹脂層を光ラジカル重合させた光ラジカル重合樹脂層である請求項1又は2記載の異方性導電フィルム。
  4.  第1接続層が、更に、エポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤とを含有している請求項3記載の異方性導電フィルム。
  5.  第2接続層が、エポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤とを含有する熱又は光カチオン若しくはアニオン重合性樹脂層、又はアクリレート化合物と熱又は光ラジカル重合開始剤とを含有する熱又は光ラジカル重合性樹脂層である請求項1~4のいずれかに記載の異方性導電フィルム。
  6.  第2接続層が、エポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤とを含有する熱又は光カチオン若しくはアニオン重合性樹脂層であり、更にアクリレート化合物と熱又は光ラジカル重合開始剤とを含有する請求項5記載の異方性導電フィルム。
  7.  導電粒子が、第2接続層に食い込んでいる請求項1~6のいずれかに記載の異方性導電フィルム。
  8.  第1接続層の最低溶融粘度が、第2接続層の最低溶融粘度よりも高い請求項1~7のいずれかに記載の異方性導電フィルム。
  9.  請求項1記載の異方性導電フィルムの製造方法であって、以下の工程(A)~(C):
    工程(A)
     光重合性樹脂層に、導電粒子を単層で配列させる工程;
    工程(B)
     導電粒子が配列した光重合性樹脂層に対して紫外線を傾斜させて照射することにより光重合反応させ、表面に導電粒子が固定化された第1接続層を形成する工程;及び
    工程(C)
     第1接続層の導電粒子側表面に、熱又は光カチオン若しくはアニオン重合性樹脂層、又は熱又は光ラジカル重合性樹脂層からなる第2接続層を形成する工程
    を有する製造方法。
  10.  工程(B)の紫外線照射を、光重合性樹脂層の導電粒子が配列した側から行う請求項9記載の製造方法。
  11.  請求項1記載の異方性導電フィルムの製造方法であって、以下の工程(AA)~(DD):
    工程(AA)
     光重合性樹脂層に導電粒子を単層で配列させる工程;
    工程(BB)
     導電粒子が配列した光重合性樹脂層に対して紫外線を傾斜させて照射することにより光重合反応させ、表面に導電粒子が仮固定化された仮第1接続層を形成する工程;
    工程(CC)
     仮第1接続層の導電粒子側表面に、熱カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層を形成する工程;及び
    工程(DD)
     第2接続層と反対側から仮第1接続層に紫外線を照射することにより光重合反応させ、仮第1接続層を本硬化させて第1接続層を形成する工程
    を有する製造方法。
  12.  工程(BB)の紫外線照射を、光重合性樹脂層の導電粒子が配列した側から行う請求項11記載の製造方法。
  13.  請求項9記載の製造方法において、工程(C)の後で、以下の工程(Z)
    工程(Z)
     第1接続層の導電粒子側の反対面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程
    を有する製造方法。
  14.  請求項9記載の製造方法において、工程(A)に先だって、以下の工程(a)
    工程(a)
     光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程
    を有し、工程(A)において、光重合性樹脂層の他面に導電粒子を単層で配列させる製造方法。
  15.  請求項11記載の製造方法において、工程(DD)の後で、以下の工程(Z)
    工程(Z)
     第1接続層の導電粒子側の反対面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程
    を有する製造方法。
  16.  請求項11記載の製造方法において、工程(AA)に先だって、以下の工程(a)
    工程(a)
     光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程
    を有し、工程(AA)において、光重合性樹脂層の他面に導電粒子を単層で配列させる製造方法。
  17.  請求項2記載の異方性導電フィルムの製造方法であって、以下の工程(A′)~(C′):
    工程(A′)
     光重合性樹脂層に導電粒子を単層で配列させる工程;
    工程(B′)
     導電粒子が配列した光重合性樹脂層に対して紫外線を少なくとも2方向から傾斜させて照射することにより光重合反応させ、表面に導電粒子が固定化された第1接続層を形成する工程;及び
    工程(C′)
     第1接続層の導電粒子側表面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層を形成する工程
    を有する製造方法。
  18.  工程(B′)の紫外線照射を、光重合性樹脂層の導電粒子が配列した側から行う請求項17記載の製造方法。
  19.  請求項2記載の異方性導電フィルムの製造方法であって、以下の工程(AA′)~(DD′):
    工程(AA′)
     光重合性樹脂層に導電粒子を単層で配列させる工程;
    工程(BB′)
     導電粒子が配列した光重合性樹脂層に対して紫外線を少なくとも2方向から傾斜させて照射することにより光重合反応させ、表面に導電粒子が仮固定化された仮第1接続層を形成する工程;
    工程(CC′)
     仮第1接続層の導電粒子側表面に、熱カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層を形成する工程; 及び
    工程(DD′)
     第2接続層と反対側から仮第1接続層に紫外線を照射することにより光重合反応させ、仮第1接続層を本硬化させて第1接続層を形成する工程
    を有する製造方法。
  20.  工程(BB′)の紫外線照射を、光重合性樹脂層の導電粒子が配列した側から行う請求項19記載の製造方法。
  21.  請求項17記載の製造方法において、工程(C′)の後で、以下の工程(Z)
    工程(Z)
     第1接続層の導電粒子側の反対面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程
    を有する製造方法。
  22.  請求項17記載の製造方法において、工程(A′)に先だって、以下の工程(a)
    工程(a)
     光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程
    を有し、工程(A′)において、光重合性樹脂層の他面に導電粒子を単層で配列させる製造方法。
  23.  請求項19記載の製造方法において、工程(DD′)の後で、以下の工程(Z)
    工程(Z)
     第1接続層の導電粒子側の反対面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程
    を有する製造方法。
  24.  請求項19記載の製造方法において、工程(AA′)に先だって、以下の工程(a)
    工程(a)
     光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程
    を有し、工程(AA′)において、光重合性樹脂層の他面に導電粒子を単層で配列させる製造方法。
  25.  請求項1~8のいずれかに記載の異方性導電フィルムで第1電子部品を第2電子部品に異方性導電接続した接続構造体。
PCT/JP2015/052910 2014-02-04 2015-02-03 異方性導電フィルム及びその製造方法 WO2015119090A1 (ja)

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Publication number Priority date Publication date Assignee Title
CN104508919B (zh) * 2012-08-01 2017-08-15 迪睿合电子材料有限公司 各向异性导电膜的制造方法、各向异性导电膜及连接构造体
KR20170081295A (ko) * 2012-08-29 2017-07-11 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름 및 그 제조 방법
JP7210846B2 (ja) * 2017-09-11 2023-01-24 株式会社レゾナック 回路接続用接着剤フィルム及びその製造方法、回路接続構造体の製造方法、並びに、接着剤フィルム収容セット
CN109341909B (zh) * 2018-11-20 2020-11-10 郑州大学 一种多功能柔性应力传感器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001052778A (ja) * 1999-08-06 2001-02-23 Hitachi Chem Co Ltd 異方導電性接着フィルムおよびその製造方法
JP2009016133A (ja) * 2007-07-03 2009-01-22 Sony Chemical & Information Device Corp 異方性導電膜及びその製造方法、並びに接合体
JP2013058412A (ja) * 2011-09-08 2013-03-28 Sekisui Chem Co Ltd 絶縁材料、積層体、接続構造体、積層体の製造方法及び接続構造体の製造方法
JP2013105636A (ja) * 2011-11-14 2013-05-30 Dexerials Corp 異方性導電フィルム、接続方法、及び接合体

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100601341B1 (ko) * 2004-06-23 2006-07-14 엘에스전선 주식회사 이방 도전성 접착제 및 이를 이용한 접착필름
US20060280912A1 (en) * 2005-06-13 2006-12-14 Rong-Chang Liang Non-random array anisotropic conductive film (ACF) and manufacturing processes
JP4789738B2 (ja) * 2006-07-28 2011-10-12 旭化成イーマテリアルズ株式会社 異方導電性フィルム
JP2010033793A (ja) 2008-07-28 2010-02-12 Tokai Rubber Ind Ltd 粒子転写膜の製造方法
KR101351617B1 (ko) * 2010-12-23 2014-01-15 제일모직주식회사 이방 도전성 필름
KR102149375B1 (ko) * 2013-07-31 2020-08-28 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름 및 그의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001052778A (ja) * 1999-08-06 2001-02-23 Hitachi Chem Co Ltd 異方導電性接着フィルムおよびその製造方法
JP2009016133A (ja) * 2007-07-03 2009-01-22 Sony Chemical & Information Device Corp 異方性導電膜及びその製造方法、並びに接合体
JP2013058412A (ja) * 2011-09-08 2013-03-28 Sekisui Chem Co Ltd 絶縁材料、積層体、接続構造体、積層体の製造方法及び接続構造体の製造方法
JP2013105636A (ja) * 2011-11-14 2013-05-30 Dexerials Corp 異方性導電フィルム、接続方法、及び接合体

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