JP6260313B2 - 異方性導電フィルム及びその製造方法 - Google Patents
異方性導電フィルム及びその製造方法 Download PDFInfo
- Publication number
- JP6260313B2 JP6260313B2 JP2014019867A JP2014019867A JP6260313B2 JP 6260313 B2 JP6260313 B2 JP 6260313B2 JP 2014019867 A JP2014019867 A JP 2014019867A JP 2014019867 A JP2014019867 A JP 2014019867A JP 6260313 B2 JP6260313 B2 JP 6260313B2
- Authority
- JP
- Japan
- Prior art keywords
- connection layer
- layer
- anisotropic conductive
- connection
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 239000010410 layer Substances 0.000 claims description 339
- 239000002245 particle Substances 0.000 claims description 129
- 229920005989 resin Polymers 0.000 claims description 119
- 239000011347 resin Substances 0.000 claims description 119
- 238000000034 method Methods 0.000 claims description 64
- 239000000945 filler Substances 0.000 claims description 36
- 239000003505 polymerization initiator Substances 0.000 claims description 35
- 150000001450 anions Chemical class 0.000 claims description 32
- -1 acrylate compound Chemical class 0.000 claims description 25
- 239000002356 single layer Substances 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 239000004593 Epoxy Substances 0.000 claims description 14
- 238000010539 anionic addition polymerization reaction Methods 0.000 claims description 13
- 230000001678 irradiating effect Effects 0.000 claims description 13
- 239000007870 radical polymerization initiator Substances 0.000 claims description 13
- 238000010526 radical polymerization reaction Methods 0.000 claims description 8
- 206010037660 Pyrexia Diseases 0.000 claims description 7
- 238000010538 cationic polymerization reaction Methods 0.000 claims description 5
- 238000000149 argon plasma sintering Methods 0.000 claims description 4
- 150000001768 cations Chemical class 0.000 claims description 3
- 150000003254 radicals Chemical class 0.000 claims description 3
- 125000002091 cationic group Chemical group 0.000 claims description 2
- 238000001723 curing Methods 0.000 description 30
- 239000003999 initiator Substances 0.000 description 20
- 238000012719 thermal polymerization Methods 0.000 description 10
- 238000006116 polymerization reaction Methods 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000007348 radical reaction Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000001451 organic peroxides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- GJKGAPPUXSSCFI-UHFFFAOYSA-N 2-Hydroxy-4'-(2-hydroxyethoxy)-2-methylpropiophenone Chemical compound CC(C)(O)C(=O)C1=CC=C(OCCO)C=C1 GJKGAPPUXSSCFI-UHFFFAOYSA-N 0.000 description 1
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical class OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 208000035475 disorder Diseases 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/16—Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D171/00—Coating compositions based on polyethers obtained by reactions forming an ether link in the main chain; Coating compositions based on derivatives of such polymers
- C09D171/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
- C09D171/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
- C09D171/12—Polyphenylene oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
- B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
- B32B2310/0831—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using UV radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/271—Manufacture and pre-treatment of the layer connector preform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/271—Manufacture and pre-treatment of the layer connector preform
- H01L2224/2712—Applying permanent coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/275—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/27515—Curing and solidification, e.g. of a photosensitive layer material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
- H01L2224/29082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
- H01L2224/29083—Three-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29357—Cobalt [Co] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29364—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
- H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
- H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9211—Parallel connecting processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/38—Effects and problems related to the device integration
- H01L2924/381—Pitch distance
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electrical Connectors (AREA)
- Wire Bonding (AREA)
- Laminated Bodies (AREA)
Description
第1接続層が、光重合樹脂層であり、
第2接続層が、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層であり、
第1接続層の第2接続層側表面に、異方性導電接続用の導電粒子が単層で配列されており、
第1接続層が絶縁フィラを含有している
ことを特徴とする異方性導電フィルムを提供する。
工程(A)
絶縁フィラを含有する光重合性樹脂層に、導電粒子を単層で配列させる工程;
工程(B)
導電粒子が配列した光重合性樹脂層に対して紫外線を照射することにより光重合反応させ、表面に導電粒子が固定化された第1接続層を形成する工程;及び
工程(C)
第1接続層の導電粒子側表面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層を形成する工程。
工程(AA)
絶縁フィラを含有する光重合性樹脂層に導電粒子を単層で配列させる工程;
工程(BB)
導電粒子が配列した光重合性樹脂層に対して紫外線を照射することにより光重合反応させ、表面に導電粒子が仮固定化された仮第1接続層を形成する工程;
工程(CC)
仮第1接続層の導電粒子側表面に、熱カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層を形成する工程;及び
工程(DD)
第2接続層と反対側から仮第1接続層に紫外線を照射することにより光重合反応させ、仮第1接続層を本硬化させて第1接続層を形成する工程。
第1接続層の導電粒子側の反対面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程。
絶縁フィラを含有する光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程。
以下、本発明の異方性導電フィルムの好ましい一例を詳細に説明する。
本発明の異方性導電フィルム1を構成する第1接続層2は、絶縁フィラを含有する光重合性樹脂層を光重合させた光重合樹脂層であるから、導電粒子を固定化できる。また、重合しているので、異方性導電接続時に加熱されても樹脂が流れ難くなるので、ショートの発生を大きく抑制でき、従って導通信頼性を向上させ、実装導電粒子捕捉率も向上させることができる。特に好ましい第1接続層2は、アクリレート化合物と光ラジカル重合開始剤と絶縁フィラとを含む光ラジカル重合性樹脂層を光ラジカル重合させた光ラジカル重合樹脂層である。以下、第1接続層2が光ラジカル重合樹脂層である場合について説明する。
絶縁フィラは、特に、第1接続層2の導通信頼性を向上させるために使用されている。このような絶縁フィラの平均粒径は、好ましくは5nm以上500nm以下、より好ましくは7nm以上300nm以下である。この範囲であれば、導通信頼性を向上させ、実装導電粒子捕捉率も向上させることができる。また、絶縁フィラは、第1接続層2全体の十分な光硬化を進めるために、光散乱性を有することが好ましい。ここで、光散乱性とは、外光を層内に拡散させるという特性を意味する。このような絶縁フィラの具体例としては、シリカ微粒子、ルチル型酸化チタン等を挙げることができる。
アクリレート単位となるアクリレート化合物としては、従来公知の光ラジカル重合性アクリレートを使用することができる。例えば、単官能(メタ)アクリレート(ここで、(メタ)アクリレートにはアクリレートとメタクリレートとが包含される)、二官能以上の多官能(メタ)アクリレートを使用することができる。本発明においては、接着剤を熱硬化性とするために、アクリル系モノマーの少なくとも一部に多官能(メタ)アクリレートを使用することが好ましい。
光ラジカル重合開始剤としては、公知の光ラジカル重合開始剤の中から適宜選択して使用することができる。例えば、アセトフェノン系光重合開始剤、ベンジルケタール系光重合開始剤、リン系光重合開始剤等が挙げられる。
導電粒子としては、従来公知の異方性導電フィルムに用いられているものの中から適宜選択して使用することができる。例えばニッケル、コバルト、銀、銅、金、パラジウムなどの金属粒子、金属被覆樹脂粒子などが挙げられる。2種以上を併用することもできる。
第2接続層3は、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層、好ましくはエポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤とを含有する熱又は光カチオン若しくはアニオン重合性樹脂層、又はアクリレート化合物と熱又は光ラジカル重合開始剤とを含有する熱又は光ラジカル重合性樹脂層からなる。ここで、第2接続層3を熱重合性樹脂層から形成することは、第1接続層2を形成する際の紫外線照射により第2接続層3の2重合反応が生じないため、生産の簡便性および品質安定性の上では望ましい。
第2接続層3がエポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤とを含有する熱又は光カチオン若しくはアニオン重合性樹脂層である場合、エポキシ化合物としては、分子内に2つ以上のエポキシ基を有する化合物もしくは樹脂が好ましく挙げられる。これらは液状であっても、固体状であってもよい。
熱カチオン重合開始剤としては、エポキシ化合物の熱カチオン重合開始剤として公知のものを採用することができ、例えば、熱により、カチオン重合性化合物をカチオン重合させ得る酸を発生するものであり、公知のヨードニウム塩、スルホニウム塩、ホスホニウム塩、フェロセン類等を用いることができ、温度に対して良好な潜在性を示す芳香族スルホニウム塩を好ましく使用することができる。
熱アニオン重合開始剤としては、エポキシ化合物の熱アニオン重合開始剤として公知のものを採用することができ、例えば、熱により、アニオン重合性化合物をアニオン重合させ得る塩基を発生するものであり、公知の脂肪族アミン系化合物、芳香族アミン系化合物、二級又は三級アミン系化合物、イミダゾール系化合物、ポリメルカプタン系化合物、三フッ化ホウ素−アミン錯体、ジシアンジアミド、有機酸ヒドラジッド等を用いることができ、温度に対して良好な潜在性を示すカプセル化イミダゾール系化合物を好ましく使用することができる。
エポキシ化合物用の光カチオン重合開始剤又は光アニオン重合開始剤としては、公知のものを適宜使用することができる。
第2接続層3がアクリレート化合物と熱又は光ラジカル重合開始剤とを含有する熱又は光ラジカル重合性樹脂層である場合、アクリレート化合物としては、第1接続層2に関して説明したものの中から適宜選択して使用することができる。
また、熱ラジカル重合開始剤としては、例えば、有機過酸化物やアゾ系化合物等が挙げられるが、気泡の原因となる窒素を発生しない有機過酸化物を好ましく使用することができる。
アクリレート化合物用の光ラジカル重合開始剤としては、公知の光ラジカル重合開始剤を使用することができる。
以上、図1の2層構造の異方性導電フィルムについて説明したが、図5に示すように、第1接続層2の他面に第3接続層5が形成されていてもよい。これにより、層全体の流動性をより精緻に制御することが可能となるという効果が得られる。ここで、第3接続層5としては、前述した第2接続層3と同じ構成としてもよい。即ち、第3接続層5は、第2接続層3と同様に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなるものである。このような第3接続層5は、第1接続層の片面に第2接続層を形成した後に、第1接続層の他面に形成してもよく、第2接続層の形成前に、第1接続層もしくはその前駆体である光重合性樹脂層の他面(第2接続層が形成されない面)に予め第3接続層を形成しておいてもよい。
本発明の異方性導電フィルムの製造方法には、一段階の光重合反応を行う製造方法と、二段階の光重合反応を行う製造方法が挙げられる。
図1(図4B)の異方性導電フィルムを一段階で光重合させて製造する一例を説明する。この製造例は、以下の工程(A)〜(C)を有する。
図2に示すように、必要に応じて剥離フィルム30上に形成した、絶縁フィラとを含有する光重合性樹脂層31に、導電粒子4を単層で配列させる。導電粒子4の配列の手法としては、特に制限はなく、特許第4789738号の実施例1の無延伸ポリプロピレンフィルムに2軸延伸操作を利用する方法や、特開2010−33793号公報の金型を使用する方法等を採用することができる。なお、配列の程度としては、接続対象のサイズ、導通信頼性、絶縁性、実装導電粒子捕捉率等を考慮し、2次元的に互いに1〜100μm程度離隔して配列されることが好ましい。
次に、図3Aに示すように、導電粒子4が配列した光重合性樹脂層31に対して、紫外線(UV)を照射することにより光重合反応させ、表面に導電粒子4が固定化された第1接続層2を形成する。この場合、紫外線(UV)を導電粒子側から照射してもよく、反対側から照射してもよいが、導電粒子側から紫外線(UV)を照射した場合には、図3Bに示すように、導電粒子4と第1接続層2の最外表面との間に位置する領域の第1接続層部分2Xの硬化率を、互いに隣接する導電粒子4間に位置する領域の第1接続層部分2Yの硬化率よりも低くすることができる。このようにすることで、粒子の裏側の硬化性は確実に低くなり接合時の押し込みを容易にし、且つ粒子の流動を防ぐ効果も同時に備えることができる。
次に、図4Aに示すように、第1接続層2の導電粒子4側表面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層3を形成する。具体的な一例として、剥離フィルム40に常法により形成された第2接続層3を、第1接続層2の導電粒子4側表面に載せ、過大な熱重合が生じない程度に熱圧着する。そして剥離フィルム30と40とを取り除くことにより図4Bの異方性導電フィルムを得ることができる。
第1接続層の導電粒子側の反対面に、好ましくは第2接続層と同様に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する。これにより図5の異方性導電フィルムを得ることができる。
この工程は、絶縁フィラを含有する光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程である。この工程(a)に引き続き、工程(A)、(B)及び(C)を実施することにより図5の異方性導電フィルム100を得ることができる。但し、工程(A)において、光重合性樹脂層の他面に導電粒子を単層で配列させる。
次に、図1(図4B)の異方性導電フィルムを二段階で光重合させて製造する一例を説明する。この製造例は、以下の工程(AA)〜(DD)を有する。
図6に示すように、必要に応じて剥離フィルム30上に形成した、絶縁フィラを含有する光重合性樹脂層31に、単層で導電粒子4を配列させる。導電粒子4の配列の手法としては、特に制限はなく、特許第4789738号の実施例1の無延伸ポリプロピレンフィルムに2軸延伸操作を利用する方法や、特開2010−33793号公報の金型を使用する方法等を採用することができる。なお、配列の程度としては、接続対象のサイズ、導通信頼性、絶縁性、実装導電粒子捕捉率等を考慮し、2次元的に互いに1〜100μm程度離隔して配列されることが好ましい。
次に、図7Aに示すように、導電粒子4が配列した光重合性樹脂層31に対して、紫外線(UV)を照射することにより光重合反応させ、表面に導電粒子4が仮固定化された仮第1接続層20を形成する。この場合、紫外線(UV)を導電粒子側から照射してもよく、反対側から照射してもよいが、導電粒子側から紫外線(UV)を照射した場合には、図7Bに示すように、導電粒子4と仮第1接続層20の最外表面との間に位置する領域の仮第1接続層部分2Xの硬化率を、互いに隣接する導電粒子4間に位置する領域の仮第1接続層部分2Yの硬化率よりも低くすることができる。
次に、図8Aに示すように、仮第1接続層20の導電粒子4側表面に、熱カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層3を形成する。具体的な一例として、剥離フィルム40に常法により形成された第2接続層3を、第1接続層2の導電粒子4側表面に載せ、過大な熱重合が生じない程度に熱圧着する。そして剥離フィルム30と40とを取り除くことにより図8Bの仮異方性導電フィルム50を得ることができる。
次に、図9Aに示すように、第2接続層3と反対側から仮第1接続層20に紫外線を照射することにより光ラジカル重合反応させ、仮第1接続層20を本硬化させて第1接続層2を形成する。これにより、図9Bの異方性導電フィルム1を得ることができる。この工程における紫外線の照射は、仮第1接続層に対し垂直方向から行うことが好ましい。また、第1接続層部分2Xと2Yの硬化率差が消失しないようにする場合には、マスクを介して照射したり、照射部位により照射光量に差を設けることが好ましい。
第1接続層の導電粒子側の反対面に、好ましくは第2接続層と同様に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する。これにより図5の異方性導電フィルムを得ることができる。
この工程は、絶縁フィラを含有する光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層を形成する工程である。この工程(a)に引き続き、工程(AA)〜(DD)を実施することにより図5の異方性導電フィルム100を得ることができる。但し、工程(AA)において、光重合性樹脂層の他面に導電粒子を単層で配列させる。この場合、第2接続層の形成の際に使用する重合開始剤としては、熱重合開始剤を適用することが好ましい。光重合開始剤の場合は、工程上、異方性導電フィルムとしての製品ライフ、接続および接続構造体の安定性に悪影響を及ぼすことが懸念される。
このようにして得られた異方性導電フィルムは、ICチップ、ICモジュールなどの第1電子部品と、フレキシブル基板、ガラス基板などの第2電子部品とを異方性導電接続する際に好ましく適用することができる。このようにして得られる接続構造体も本発明の一部である。なお、異方性導電フィルムの第1接続層側をフレキシブル基板等の第2電子部品側に配し、第2接続層側をICチップなどの第1電子部品側に配することが、導通信頼性を高める点から好ましい。
特許第4789738号の実施例1の操作に準じて導電粒子の配列を行うとともに、表1に示す配合(質量部)に従って第1接続層と第2接続層とが積層された2層構造の異方性導電フィルムを作成した。
具体的には、まず、アクリレート化合物、光ラジカル重合開始剤及び絶縁フィラ等を酢酸エチル又はトルエンにて固形分が50質量%となるように混合液を調製した。この混合液を、厚さ50μmのポリエチレンテレフタレートフィルムに、乾燥厚が5μmとなるように塗布し、80℃のオーブン中で5分間乾燥することにより、第1接続層の前駆層である光ラジカル重合性樹脂層を形成した。
熱硬化性樹脂及び潜在性硬化剤等を酢酸エチル又はトルエンにて固形分が50質量%となるように混合液を調製した。この混合液を、厚さ50μmのポリエチレンテレフタレートフィルムに、乾燥厚が12μmとなるように塗布し、80℃のオーブン中で5分間乾燥することにより、第2接続層を形成した。
このようにして得られた第1接続層と第2接続層とを、導電粒子が内側となるようにラミネートすることにより異方性導電フィルムを得た。
得られた異方性導電フィルムを用いて、0.5×1.8×20.0mmの大きさのICチップ(バンプサイズ30×85μm:バンプ高さ15μm、バンプピッチ50μm)を、0.5×50×30mmの大きさのコーニング社製のガラス配線基板(1737F)に180℃、80MPa、5秒という条件で実装して接続構造サンプル体を得た。
得られた接続構造サンプル体について、以下に説明するように、異方性導電フィルムの「実装導電粒子捕捉率」、「初期導通抵抗」、および「導通信頼性」を試験評価した。得られた結果を表1に示す。
“加熱・加圧前の接続構造サンプル体のバンプ上に存在する理論粒子量”に対する“加熱・加圧後(実際の実装後)の接続構造サンプル体のバンプ上で実際に捕捉されている粒子量”の割合を以下の数式に従って求めた。
接続構造サンプル体の導通抵抗値を、デジタルマルチメーター(アジレント・テクノロジー(株))を用いて測定した。実用上、2Ω以下であることが望ましい。
接続構造サンプル体を85℃、85%RHの高温高湿環境下に500時間放置した後の導通抵抗を、デジタルマルチメーター(アジレント・テクノロジー(株))を用いて測定した。実用上、4Ω以下であれば導通信頼性が良好と判断される。
2、 第1接続層
2X、2Y 第1接続層部分
3 第2接続層
4 導電粒子
5 第3接続層
30、40 剥離フィルム
20 仮第1接続層
31 光重合性樹脂層
50 仮異方性導電フィルム
Claims (20)
- 第1接続層とその片面に形成された第2接続層とを有する異方性導電フィルムであって、
第1接続層が、光重合性樹脂を光重合させた光重合樹脂を含有する光重合樹脂層であり、
第2接続層が、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層であり、
第1接続層の第2接続層側表面に、異方性導電接続用の導電粒子が単層で配列されており、
第1接続層が、絶縁性フィラを含有している
ことを特徴とする異方性導電フィルム。 - 第1接続層とその片面に形成された第2接続層とを有する異方性導電フィルムであって、
第1接続層が、光重合性樹脂を光重合させた光重合樹脂を含有する光重合樹脂層であり、
第2接続層が、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層であり、
第1接続層の第2接続層側表面に、異方性導電接続用の導電粒子が異方性導電フィルムの平面方向に一定の間隔で設けられており、
第1接続層が、絶縁性フィラを含有している
ことを特徴とする異方性導電フィルム。 - 絶縁性フィラの平均粒径が5nm以上500nm以下である請求項1又は2記載の異方性導電フィルム。
- 絶縁性フィラが光散乱性を有する請求項1〜3のいずれかに記載の異方性導電フィルム。
- 第1接続層が、アクリレート化合物と光ラジカル重合開始剤とを含む光ラジカル重合性樹脂層を光ラジカル重合させた光ラジカル重合層である請求項1〜4のいずれかに記載の異方性導電フィルム。
- 第1接続層が、更に、エポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤とを含有している請求項1〜5のいずれかに記載の異方性導電フィルム。
- 第2接続層が、エポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤とを含有する熱又は光カチオン若しくはアニオン重合性樹脂層、又はアクリレート化合物と熱又は光ラジカル重合開始剤とを含有する熱又は光ラジカル重合性樹脂層である請求項1〜6のいずれかに記載の異方性導電フィルム。
- 第2接続層が、エポキシ化合物と熱又は光カチオン若しくはアニオン重合開始剤とを含有する熱又は光カチオン若しくはアニオン重合性樹脂層であり、更にアクリレート化合物と熱又は光ラジカル重合開始剤とを含有する請求項7記載の異方性導電フィルム。
- 導電粒子が、第2接続層に食い込んでいる請求項1〜8のいずれかに記載の異方性導電フィルム。
- 第1接続層において、導電粒子と第1接続層の最外表面との間に位置する領域の第1接続層の硬化率が、互いに隣接する導電粒子間に位置する領域の第1接続層の硬化率よりも低い請求項1〜9のいずれかに記載の異方性導電フィルム。
- 第1接続層の最低溶融粘度が、第2接続層の最低溶融粘度よりも高い請求項1〜10のいずれかに記載の異方性導電フィルム。
- 請求項1又は2記載の異方性導電フィルムの製造方法であって、以下の工程(A)〜(C):
工程(A)
絶縁フィラと光重合性樹脂とを含有する光重合性樹脂層に、導電粒子を単層で配列させる工程;
工程(B)
導電粒子が配列した光重合性樹脂層に対して紫外線を照射することにより光重合反応させ、光重合性樹脂を光重合させた光重合樹脂を含有し、表面に導電粒子が固定化された第1接続層を形成する工程;及び
工程(C)
第1接続層の導電粒子側表面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層を形成する工程
を有する製造方法。 - 工程(B)の紫外線照射を、光重合性樹脂層の導電粒子が配列した側から行う請求項12記載の製造方法。
- 請求項1又は2記載の異方性導電フィルムの製造方法であって、以下の工程(AA)〜(DD):
工程(AA)
絶縁フィラと光重合性樹脂とを含有する光重合性樹脂層に、導電粒子を単層で配列させる工程;
工程(BB)
導電粒子が配列した光重合性樹脂層に対して紫外線を照射することにより光重合反応させ、光重合性樹脂を光重合させた光重合樹脂を含有し、表面に導電粒子が仮固定化された仮第1接続層を形成する工程;
工程(CC)
仮第1接続層の導電粒子側表面に、熱カチオン、アニオン若しくはラジカル重合性樹脂層からなる第2接続層を形成する工程;及び
工程(DD)
第2接続層と反対側から仮第1接続層に紫外線を照射することにより光重合反応させ、仮第1接続層を本硬化させて第1接続層を形成する工程
を有する製造方法。 - 工程(BB)の紫外線照射を、光重合性樹脂層の導電粒子が配列した側から行う請求項14記載の製造方法。
- 請求項12記載の製造方法において、工程(C)の後で、以下の工程(Z)
工程(Z)
第1接続層の導電粒子側の反対面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程
を有する製造方法。 - 請求項12記載の製造方法において、工程(A)に先だって、以下の工程(a)
工程(a)
絶縁フィラを含有する光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程
を有し、工程(A)において、光重合性樹脂層の他面に導電粒子を単層で配列させる製造方法。 - 請求項14記載の製造方法において、工程(DD)の後で、以下の工程(Z)
工程(Z)
第1接続層の導電粒子側の反対面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程
を有する製造方法。 - 請求項14記載の製造方法において、工程(AA)に先だって、以下の工程(a)
工程(a)
絶縁フィラを含有する光重合性樹脂層の片面に、熱又は光カチオン、アニオン若しくはラジカル重合性樹脂層からなる第3接続層を形成する工程
を有し、工程(AA)において、光重合性樹脂層の他面に導電粒子を単層で配列させる製造方法。 - 請求項1〜11のいずれかに記載の異方性導電フィルムで第1電子部品を第2電子部品に異方性導電接続した接続構造体。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014019867A JP6260313B2 (ja) | 2014-02-04 | 2014-02-04 | 異方性導電フィルム及びその製造方法 |
PCT/JP2015/052927 WO2015119095A1 (ja) | 2014-02-04 | 2015-02-03 | 異方性導電フィルム及びその製造方法 |
US15/114,664 US10849236B2 (en) | 2014-02-04 | 2015-02-03 | Anisotropic conductive film and production method of the same |
KR1020167021046A KR102450709B1 (ko) | 2014-02-04 | 2015-02-03 | 이방성 도전 필름 및 그의 제조 방법 |
CN201580007299.6A CN105940559B (zh) | 2014-02-04 | 2015-02-03 | 各向异性导电膜及其制造方法 |
TW104103696A TWI651195B (zh) | 2014-02-04 | 2015-02-04 | 異向性導電膜及其製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014019867A JP6260313B2 (ja) | 2014-02-04 | 2014-02-04 | 異方性導電フィルム及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015149132A JP2015149132A (ja) | 2015-08-20 |
JP6260313B2 true JP6260313B2 (ja) | 2018-01-17 |
Family
ID=53777900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014019867A Active JP6260313B2 (ja) | 2014-02-04 | 2014-02-04 | 異方性導電フィルム及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10849236B2 (ja) |
JP (1) | JP6260313B2 (ja) |
KR (1) | KR102450709B1 (ja) |
CN (1) | CN105940559B (ja) |
TW (1) | TWI651195B (ja) |
WO (1) | WO2015119095A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108475558B (zh) * | 2016-02-15 | 2021-11-09 | 迪睿合株式会社 | 各向异性导电膜、其制造方法和连接结构体 |
CN111094487A (zh) * | 2017-09-11 | 2020-05-01 | 日立化成株式会社 | 电路连接用粘接剂膜及其制造方法、电路连接结构体的制造方法、以及粘接剂膜收纳组件 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001052778A (ja) * | 1999-08-06 | 2001-02-23 | Hitachi Chem Co Ltd | 異方導電性接着フィルムおよびその製造方法 |
JP4838828B2 (ja) * | 2001-04-27 | 2011-12-14 | 旭化成株式会社 | 異方性を有する導電性接着シートおよびその製造方法 |
GB0225913D0 (en) * | 2002-11-06 | 2002-12-11 | 3M Innovative Properties Co | Abrasive articles |
TWI388876B (zh) * | 2003-12-26 | 2013-03-11 | Fujifilm Corp | 抗反射膜、偏光板,其製造方法,液晶顯示元件,液晶顯示裝置,及影像顯示裝置 |
KR100722493B1 (ko) * | 2005-09-02 | 2007-05-28 | 제일모직주식회사 | 절연 전도성 미립자 및 이를 이용한 이방 전도성 접착필름 |
JP4789738B2 (ja) | 2006-07-28 | 2011-10-12 | 旭化成イーマテリアルズ株式会社 | 異方導電性フィルム |
JP4962706B2 (ja) * | 2006-09-29 | 2012-06-27 | 日本化学工業株式会社 | 導電性粒子およびその製造方法 |
JP5093482B2 (ja) * | 2007-06-26 | 2012-12-12 | ソニーケミカル&インフォメーションデバイス株式会社 | 異方性導電材料、接続構造体及びその製造方法 |
JP4880533B2 (ja) * | 2007-07-03 | 2012-02-22 | ソニーケミカル&インフォメーションデバイス株式会社 | 異方性導電膜及びその製造方法、並びに接合体 |
JP2010033793A (ja) * | 2008-07-28 | 2010-02-12 | Tokai Rubber Ind Ltd | 粒子転写膜の製造方法 |
JP4897778B2 (ja) * | 2008-11-20 | 2012-03-14 | ソニーケミカル&インフォメーションデバイス株式会社 | 接続フィルム、並びに、接合体及びその製造方法 |
JP2010199087A (ja) * | 2010-05-11 | 2010-09-09 | Sony Chemical & Information Device Corp | 異方性導電膜及びその製造方法、並びに、接合体及びその製造方法 |
JP2012173448A (ja) * | 2011-02-21 | 2012-09-10 | Seiko Epson Corp | 画像形成装置、画像形成方法 |
JP2013049466A (ja) * | 2011-08-31 | 2013-03-14 | Sanyu Kikaku:Kk | 収納用トレー |
JP2013058412A (ja) * | 2011-09-08 | 2013-03-28 | Sekisui Chem Co Ltd | 絶縁材料、積層体、接続構造体、積層体の製造方法及び接続構造体の製造方法 |
JP2013105636A (ja) | 2011-11-14 | 2013-05-30 | Dexerials Corp | 異方性導電フィルム、接続方法、及び接合体 |
JP2013149466A (ja) | 2012-01-19 | 2013-08-01 | Sekisui Chem Co Ltd | 異方性導電材料、接続構造体及び接続構造体の製造方法 |
-
2014
- 2014-02-04 JP JP2014019867A patent/JP6260313B2/ja active Active
-
2015
- 2015-02-03 CN CN201580007299.6A patent/CN105940559B/zh active Active
- 2015-02-03 KR KR1020167021046A patent/KR102450709B1/ko active IP Right Grant
- 2015-02-03 WO PCT/JP2015/052927 patent/WO2015119095A1/ja active Application Filing
- 2015-02-03 US US15/114,664 patent/US10849236B2/en active Active
- 2015-02-04 TW TW104103696A patent/TWI651195B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI651195B (zh) | 2019-02-21 |
JP2015149132A (ja) | 2015-08-20 |
WO2015119095A1 (ja) | 2015-08-13 |
KR102450709B1 (ko) | 2022-10-06 |
TW201542361A (zh) | 2015-11-16 |
CN105940559A (zh) | 2016-09-14 |
US20160345442A1 (en) | 2016-11-24 |
KR20160117456A (ko) | 2016-10-10 |
CN105940559B (zh) | 2020-07-10 |
US10849236B2 (en) | 2020-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6372542B2 (ja) | 異方性導電フィルムの製造方法及び異方性導電フィルム | |
JP6056700B2 (ja) | 異方性導電フィルム及びその製造方法 | |
CN105940564B (zh) | 各向异性导电膜及其制造方法 | |
JP6269114B2 (ja) | 異方性導電フィルム及びその製造方法 | |
JP6428325B2 (ja) | 異方性導電フィルム及びその製造方法 | |
WO2015119090A1 (ja) | 異方性導電フィルム及びその製造方法 | |
JP6409281B2 (ja) | 異方性導電フィルム及びその製造方法 | |
JP6260313B2 (ja) | 異方性導電フィルム及びその製造方法 | |
KR102439365B1 (ko) | 이방성 도전 필름 및 그 제조 방법 | |
TWI723561B (zh) | 異向性導電膜及其製造方法 | |
JP6233069B2 (ja) | 異方性導電フィルム及びその製造方法 | |
JP6260312B2 (ja) | 異方性導電フィルム及びその製造方法 | |
WO2015119098A1 (ja) | 異方性導電フィルム及びその製造方法 | |
JP6217422B2 (ja) | 異方性導電フィルム及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161226 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170829 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171026 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171114 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171127 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6260313 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |