TWI557208B - An anisotropic conductive film, an anisotropic conductive film manufacturing method, a method for manufacturing a connecting body, and a connecting method - Google Patents

An anisotropic conductive film, an anisotropic conductive film manufacturing method, a method for manufacturing a connecting body, and a connecting method Download PDF

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Publication number
TWI557208B
TWI557208B TW102133766A TW102133766A TWI557208B TW I557208 B TWI557208 B TW I557208B TW 102133766 A TW102133766 A TW 102133766A TW 102133766 A TW102133766 A TW 102133766A TW I557208 B TWI557208 B TW I557208B
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Taiwan
Prior art keywords
adhesive layer
layer
conductive particles
insulating adhesive
conductive film
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Application number
TW102133766A
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English (en)
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TW201432017A (zh
Inventor
Kouichi Sato
Yasushi Akutsu
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Dexerials Corp
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Publication of TW201432017A publication Critical patent/TW201432017A/zh
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    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/10Adhesives in the form of films or foils without carriers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C71/00After-treatment of articles without altering their shape; Apparatus therefor
    • B29C71/04After-treatment of articles without altering their shape; Apparatus therefor by wave energy or particle radiation, e.g. for curing or vulcanising preformed articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/308Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising acrylic (co)polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/36Layered products comprising a layer of synthetic resin comprising polyesters
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/38Layered products comprising a layer of synthetic resin comprising epoxy resins
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/02Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
    • B32B3/08Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by added members at particular parts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B33/00Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/08Metals
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    • C09J201/00Adhesives based on unspecified macromolecular compounds
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    • C09J7/00Adhesives in the form of films or foils
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13452Conductors connecting driver circuitry and terminals of panels
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13454Drivers integrated on the active matrix substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • B29C2035/0827Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C2059/028Incorporating particles by impact in the surface, e.g. using fluid jets or explosive forces to implant particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29KINDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2063/00Use of EP, i.e. epoxy resins or derivatives thereof, as moulding material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29LINDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2009/00Layered products
    • B29L2009/003Layered products comprising a metal layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29LINDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00Other particular articles
    • B29L2031/34Electrical apparatus, e.g. sparking plugs or parts thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/20Inorganic coating
    • B32B2255/205Metallic coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2264/00Composition or properties of particles which form a particulate layer or are present as additives
    • B32B2264/10Inorganic particles
    • B32B2264/102Oxide or hydroxide
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2264/00Composition or properties of particles which form a particulate layer or are present as additives
    • B32B2264/10Inorganic particles
    • B32B2264/104Oxysalt, e.g. carbonate, sulfate, phosphate or nitrate particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2270/00Resin or rubber layer containing a blend of at least two different polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/20Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202Conductive
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/40Properties of the layers or laminate having particular optical properties
    • B32B2307/412Transparent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/70Other properties
    • B32B2307/706Anisotropic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/20Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/202LCD, i.e. liquid crystal displays
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/001Conductive additives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/318Applications of adhesives in processes or use of adhesives in the form of films or foils for the production of liquid crystal displays
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/20Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/40Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description

異向性導電膜、異向性導電膜之製造方法、連接體之製造方法及連接方法
本發明係關於一種將電子零件進行異向性導電連接之異向性導電膜,尤其是關於一種消除電子零件之連接後之基板之翹曲,連接可靠性經提高之異向性導電膜、異向性導電膜之製造方法、連接體之製造方法、及連接方法。本申請案係基於在日本於2012年9月18日提出申請之日本專利申請編號日本特願2012-203958、及在日本於2013年9月13日提出申請之日本特願2013-190904而主張優先權者,並且將該等申請案藉由參照而引用於本申請案中。
自先前以來,作為電視或PC顯示器、行動電話、平板PC、攜帶型遊戲機或車載用顯示器等各種顯示手段,大多使用有液晶顯示裝置。近年來,於此種液晶顯示裝置中,就微間距化、輕量薄型化等觀點而言,採用有將液晶驅動用IC直接構裝於液晶顯示面板之基板上之所謂COG(chip on glass,玻璃覆晶)、或者將形成有液晶驅動電路之可撓性基板直接構裝於液晶顯示面板之基板上之所謂FOG(film on glass,鍍膜玻璃)。
例如採用COG構裝方式之液晶顯示裝置100如圖10所示,具有發揮用於液晶顯示之主功能之液晶顯示面板104,該液晶顯示面板104具有由玻璃基板等所構成之相互對向之兩片透明基板102、103。而且,液 晶顯示面板104中,該等兩透明基板102、103藉由框狀之封件105而相互貼合,並且於由兩透明基板102、103及封件105所包圍之空間內設置有封入有液晶106之面板顯示部107。
透明基板102、103於相互對向之兩內側表面以相互交叉之方式形成由ITO(氧化銦錫)等所構成之條紋狀之一對透明電極108、109。而且,兩透明基板102、103係藉由該等兩透明電極108、109之該交叉部位而構成作為液晶顯示之最小單元之像素。
兩透明基板102、103中,一透明基板103係形成為平面尺寸大於另一透明基板102,於該較大地形成之透明基板103之緣部103a形成有透明電極109之端子部109a。又,於兩透明電極108、109上形成有實施有特定之摩擦處理之配向膜111、112,藉由該配向膜111、112而控制液晶分子之初期配向。進而,於兩透明基板102、103之外側配設有一對偏光板118、119,藉由該等兩偏光板118、119而控制來自背光裝置等光源120之透射光之振動方向。
液晶驅動用IC 115經由異向性導電膜114而熱壓接於端子部109a上。異向性導電膜114係在熱硬化型之黏合劑樹脂中混入導電性粒子並製成膜狀者,藉由加熱壓接,於2個導體間利用導電粒子獲得導體間之電性導通,並且利用黏合劑樹脂保持導體間之機械連接。液晶驅動用IC 115藉由對像素選擇性地施加液晶驅動電壓,可使液晶之配向部分地變化而進行特定之液晶顯示。再者,作為構成異向性導電膜114之接著劑,通常使用可靠性最高之熱硬化性接著劑。
於此種經由異向性導電膜114而將液晶驅動用IC 115連接於端子部109a之情形時,首先,將異向性導電膜114藉由未圖示之預壓接手段預壓接於透明電極109之端子部109a上。繼而,於異向性導電膜114上載置液晶驅動用IC 115後,如圖11所示,藉由熱壓接頭等熱壓接手段121 而將液晶驅動用IC 115與異向性導電膜114一同向端子部109a側進行按壓,並使熱壓接手段121發熱。藉由該熱壓接手段121產生之發熱,異向性導電膜114產生熱硬化反應,藉此,液晶驅動用IC 115經由異向性導電膜114而接著於端子部109a上。
[專利文獻1]日本特開2003-195335號公報
然而最近就顯示裝置之薄型、輕量化之傾向而言,伴隨著液晶顯示裝置100本身之小型、輕量化,而要求玻璃基板等透明基板102、103亦薄型化。
此處,於將液晶驅動用IC 115進行COG構裝於用於液晶顯示面板104之透明基板103之情形時,由於透明基板103之緣部103a之構裝區域之狹小化、或透明基板103之薄型化,故而容易產生由熱加壓所導致之透明基板103之翹曲。若透明基板103產生翹曲,則會於COG構裝區域周邊之液晶畫面產生顏色不均。
該透明基板103之翹曲係起因於伴隨異向性導電膜114之接著劑成分之硬化收縮而導致之應力之產生,故而亦考慮藉由於接著劑成分中添加橡膠成分等應力緩和劑而謀求降低翹曲之方法。然而,藉由添加應力緩和劑,接著劑成分之凝聚力會降低,而有導致連接可靠性降低、導通電阻上升之虞。
又,於藉由變更接著劑成分之種類或量、構裝條件等而謀求降低翹曲之情形時,加上維持連接可靠性、縮短製程時間、緩和對液晶驅動用IC 115等電子零件之熱衝擊等各種要素,亦難以找出最佳之條件。
因此,本發明之目的在於提供一種於使用了異向性導電膜之電子零件之連接步驟中,可容易地謀求降低連接後之翹曲之異向性導電 膜、異向性導電膜之製造方法、連接體之製造方法、及連接方法。
為了解決上述之課題,本發明之異向性導電膜具有:第1絕緣性接著劑層、第2絕緣性接著劑層、以及被上述第1絕緣性接著劑層及上述第2絕緣性接著劑層夾持且於絕緣性接著劑中含有導電性粒子之導電性粒子含有層,並且,於上述導電性粒子含有層與上述第1絕緣性接著劑層之間含有氣泡,上述導電性粒子含有層中,與上述第2絕緣性接著劑層接觸之上述導電性粒子之下部的硬化度低於其他部位之硬化度。
又,本發明之異向性導電膜之製造方法如下:使導電性粒子排列於具有開口之模具的上述開口,將以剝離基材支持光硬化型接著劑層而成之接著膜的上述接著劑層,層壓於上述模具之排列有上述導電性粒子的面,自上述剝離基材之上表面將上述接著劑層加壓至上述模具,將上述接著劑層壓入至上述開口,將上述接著膜自上述模具剝離,而形成上述導電性粒子自上述接著劑層之表面露出一部分而貼合於上述表面,並且成型有對應於上述模具之凹凸形狀的導電性粒子含有層,對上述導電性粒子含有層之形成有凹凸形狀的表面照射光而使上述表面硬化,於上述導電性粒子含有層之上述表面,層壓第1絕緣性接著劑層,使上述導電性粒子含有層與上述第1絕緣性接著劑層之間含有氣泡,並且於上述導電性粒子含有層之與上述表面相反側之背面,層壓第2絕緣性接著劑層。
又,本發明之連接體之製造方法係使用上述異向性導電膜而將第1電子零件之端子與第2電子零件之端子進行異向性導電連接而成之連接體之製造方法,並且於上述第1電子零件上暫貼上述異向性導電膜之上述第1絕緣層接著劑層,於上述第2絕緣性接著劑層上暫時搭載上述第2電子零件,且自上述第2電子零件上利用加熱按壓或光照射而進行接合。
又,本發明之連接方法係使用上述異向性導電膜而將第1電子零件之端子與第2電子零件之端子進行異向性導電連接,於上述第1 電子零件上暫貼上述異向性導電膜之上述第1絕緣性接著劑層,於上述第2絕緣性接著劑層上暫時搭載上述第2電子零件,且自上述第2電子零件上利用加熱按壓或光照射而進行接合。
根據本發明,異向性導電膜雖然伴隨各層之接著劑成分之硬化收縮而產生應力,但可藉由導電性粒子含有層與第1絕緣性接著劑層之間所含有之氣泡所產生之應力緩和作用而抑制電子零件之翹曲。
1、100‧‧‧液晶顯示裝置
3‧‧‧加熱按壓頭
10‧‧‧液晶顯示面板
11、12‧‧‧透明基板
12a‧‧‧緣部
16、17‧‧‧透明電極
17a‧‧‧端子部
18‧‧‧電子零件
18a‧‧‧連接端子
20‧‧‧COG構裝部
23、123‧‧‧異向性導電膜
30、130‧‧‧第1絕緣性接著劑層
31、131‧‧‧第2絕緣性接著劑層
32、132‧‧‧導電性粒子
33、133‧‧‧絕緣性接著劑
34、134‧‧‧導電性粒子含有層
34a、134a‧‧‧一面
34b、134b‧‧‧另一面
35、36、135、136‧‧‧剝離基材
40、140‧‧‧凹凸圖案
40a、140a‧‧‧凸部
40b、140b‧‧‧凹部
41、141‧‧‧氣泡
50‧‧‧模具
51‧‧‧開口
55‧‧‧接著劑層
56‧‧‧剝離基材
142‧‧‧液狀組成物
圖1係表示使用有應用本發明之異向性導電膜之一實施形態的液晶顯示裝置之剖面圖。
圖2係表示應用有本發明之異向性導電膜之一實施形態之剖面圖。
圖3係表示應用有本發明之異向性導電膜之另一實施形態之剖面圖。
圖4係表示導電性粒子單層排列於開口之模具之剖面圖。
圖5係表示接著劑層被層壓於模具之狀態之剖面圖。
圖6係表示由剝離基材支持之導電性粒子含有層之剖面圖。
圖7係表示第1絕緣性接著劑層被層壓於導電性粒子含有層之狀態之剖面圖。
圖8係表示使用有應用本發明之異向性導電膜之一實施形態的電子零件之連接狀態之剖面圖。
圖9係表示導電性粒子排列於開口之模具之平面圖。
圖10係表示先前之液晶顯示面板之剖面圖。
圖11係表示先前之液晶顯示面板之COG構裝步驟之剖面圖。
以下,以應用於液晶顯示裝置之製造之情形為例,對本發明 之異向性導電膜、異向性導電膜之製造方法、連接體之製造方法、及連接方法之一實施形態一面參照圖式一面詳細地說明。再者,本發明並非僅限定於以下之實施形態,當然可於不脫離本發明之主旨之範圍內進行各種變更。又,圖式為示意性者,各尺寸之比率等有與現實者不同之情形。具體之尺寸等應參考以下之說明而進行判斷。又,於圖式相互間當然亦包含相互之尺寸之關係或比率不同之部分。
[液晶顯示裝置]
作為使用本發明之異向性導電膜之一實施形態所製造之連接體的液晶顯示裝置係藉由所謂COG(chip on glass)構裝而將液晶驅動用IC直接構裝於液晶顯示面板之基板上,又,係藉由所謂FOG(film on glass)構裝而將形成有液晶驅動電路之可撓性基板直接構裝於液晶顯示面板之基板上。
液晶顯示裝置如圖1所示,具有發揮用於液晶顯示之主功能之液晶顯示面板10。該液晶顯示面板10與上述液晶顯示面板104同樣地對向配置有由玻璃基板等所構成之兩片透明基板11、12,該等透明基板11、12係藉由框狀之封件13而相互貼合。而且,液晶顯示面板10藉由於由透明基板11、12所包圍之空間內封入液晶14而形成面板顯示部15。
透明基板11、12於相互對向之兩內側表面以相互交叉之方式形成由ITO(氧化銦錫)等所構成之條紋狀之一對透明電極16、17。而且,兩透明基板16、17藉由該等兩透明電極16、17之該交叉部位而構成作為液晶顯示之最小單元之像素。
兩透明基板11、12中,一透明基板12係形成為大於另一透明基板11之平面尺寸,於該較大地形成之透明基板12之緣部12a設置有構裝液晶驅動用IC等電子零件18之COG構裝部20,又,於COG構裝部20之外側附近設置有構裝形成有液晶驅動電路之可撓性基板21之FOG構裝部22。
再者,液晶驅動用IC或液晶驅動電路可藉由對像素選擇性地施加液晶驅動電壓而使液晶之配向部分地變化,進行特定之液晶顯示。
於各構裝部20、22形成有透明電極17之端子部17a。液晶驅動用IC等電子零件18或可撓性基板21經由異向性導電膜23而熱壓接於端子部17a上。異向性導電膜23含有導電性粒子,將電子零件18或可撓性基板21之電極與形成於透明基板12之緣部12a的透明電極17之端子部17a經由導電性粒子而電連接。該異向性導電膜23為熱硬化型接著劑,作為一例,藉由利用下述之加熱按壓頭3進行熱壓接而使導電性粒子以被壓碎之狀態硬化,使透明基板12與電子零件18或可撓性基板21連接。
又,於兩透明電極16、17上形成有實施有特定之摩擦處理之配向膜24,藉由該配向膜24而控制液晶分子之初期配向。進而,於兩透明基板11、12之外側配設有一對偏光板25、26,藉由該等兩偏光板25、26而控制來自背光裝置等光源(未圖示)之透射光的振動方向。
[異向性導電膜]
繼而,對於異向性導電膜23進行說明。異向性導電膜23如圖2所示,具有:第1絕緣性接著劑層30、第2絕緣性接著劑層31、以及被第1絕緣性接著劑層30及第2絕緣性接著劑層31夾持且於絕緣性接著劑33中含有導電性粒子32之導電性粒子含有層34。
[第1、第2絕緣性接著劑層]
第1、第2絕緣性接著劑層30、31均為熱硬化性之接著劑,且係含有膜形成樹脂、熱硬化性樹脂、及硬化劑之有機樹脂黏合劑受剝離基材35、36支持而成。又,第1、第2絕緣性接著劑層30、31可為一併含有熱硬化性與光硬化性之接著劑,亦可僅為光硬化性之接著劑。於該情形時,膜形成樹脂等亦可使用公知之材料。關於剝離基材35、36亦相同。
膜形成樹脂相當於平均分子量為10000以上之高分子量樹 脂,就膜形成性之觀點而言,較佳為10000~80000左右之平均分子量。作為膜形成樹脂,可列舉:環氧樹脂、苯氧基樹脂、聚酯胺酯樹脂、聚酯樹脂、聚胺酯樹脂(polyurethane resin)、丙烯酸樹脂、聚醯亞胺樹脂、丁醛樹脂等各種樹脂,該等可單獨使用,亦可組合2種以上使用。該等之中,就膜形成狀態、連接可靠性等觀點而言,可較佳地使用苯氧基樹脂。
作為熱硬化性樹脂,並無特別限定,例如可列舉:市售之環氧樹脂或於常溫下具有流動性之液狀環氧樹脂、丙烯酸樹脂等。
作為環氧樹脂,可例示:雙酚A型環氧樹脂、雙酚F型環氧樹脂、酚醛清漆型環氧樹脂、或橡膠、胺酯等各種改性環氧樹脂等,該等可單獨使用,亦可混合2種以上使用。又,作為液狀環氧樹脂,可使用:雙酚型環氧樹脂、萘型環氧樹脂、聯苯型環氧樹脂、苯酚酚醛清漆型環氧樹脂、茋型環氧樹脂、三苯酚甲烷型環氧樹脂、苯酚芳烷基型環氧樹脂、萘酚型環氧樹脂、二環戊二烯型環氧樹脂、三苯甲烷型環氧樹脂等,該等可單獨使用,亦可混合2種以上使用。
作為丙烯酸樹脂,並無特別限制,可根據目的而適當選擇丙烯酸化合物、液狀丙烯酸酯等。例如可列舉:丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丙酯、丙烯酸異丁酯、環氧丙烯酸酯、乙二醇二丙烯酸酯、二乙二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、二羥甲基三環癸烷二丙烯酸酯、1,4-丁二醇四丙烯酸酯、2-羥基-1,3-二丙烯醯氧基丙烷、2,2-雙[4-(丙烯醯氧基甲氧基)苯基]丙烷、2,2-雙[4-(丙烯醯氧基乙氧基)苯基]丙烷、丙烯酸二環戊烯酯、丙烯酸三環癸酯、異氰尿酸三(丙烯醯氧基乙基)酯、丙烯酸胺基甲酸酯、環氧丙烯酸酯等。再者,亦可使用將丙烯酸酯換作甲基丙烯酸酯者,該等可單獨使用1種,亦可併用2種以上。
硬化劑並無特別限制,可根據目的而適當選擇,例如,可使用藉由熱或光而活化之潛伏性硬化劑。作為潛伏性硬化劑,例如可列舉: 鋶鹽等陽離子系硬化劑,聚胺、咪唑等陰離子系硬化劑,有機過氧化物等自由基系硬化劑等。
作為其他之添加組成物,較佳為添加矽烷偶合劑。作為矽烷偶合劑,可使用:環氧系、胺基系、巰基-硫醚系、脲基系等。該等之中,於本實施之形態中,可較佳地使用環氧系矽烷偶合劑。藉此,可提高有機材料與無機材料之界面中之接著性。又,亦可添加無機填料。作為無機填料,可使用:二氧化矽、滑石、氧化鈦、碳酸鈣、氧化鎂等,無機填料之種類並無特別限定。可藉由無機填料之含量而控制流動性,提高粒子捕捉率。又,亦可以緩和接合體之應力之目的而適當使用橡膠成分等。
第1、第2絕緣性接著劑層30、31係藉由如下方式而形成:將藉由利用有機溶劑溶解該等膜形成樹脂、熱硬化樹脂、硬化劑、以及其他添加劑所獲得之有機樹脂黏合劑塗佈於剝離基材35、36上,並使有機溶劑發揮。再者,於摻合膜形成樹脂、熱硬化性樹脂、硬化劑、以及其他添加劑時,作為可溶解該等之有機溶劑,可使用:甲苯、乙酸乙酯、或該等之混合溶劑、其他各種有機溶劑。
作為剝離基材35、36,可使用異向性導電膜(ACF)中通常所使用之例如聚對苯二甲酸乙二酯膜等基材。
[導電性粒子含有層]
第1絕緣性接著劑層30及第2絕緣性接著劑層31夾持導電性粒子含有層34。導電性粒子含有層34為紫外線硬化型之接著劑,且含有膜形成樹脂、熱硬化性樹脂、硬化劑、以及導電性粒子32。
作為構成導電性粒子含有層34之膜形成樹脂、熱硬化性樹脂、硬化劑、其他添加劑,可使用與上述之第1、第2絕緣性接著劑層30、31相同者。
作為導電性粒子32,可列舉異向性導電膜中所使用之公知 之任意導電性粒子。作為導電性粒子32,例如可列舉:鎳、鐵、銅、鋁、錫、鉛、鉻、鈷、銀、金等各種金屬或金屬合金之粒子,於金屬氧化物、碳、石墨、玻璃、陶瓷、塑膠等之粒子之表面塗佈有金屬者,或於該等粒子之表面進而塗佈有絕緣薄膜者等。於在樹脂粒子之表面塗佈有金屬者之情形時,作為樹脂粒子,例如可列舉:環氧樹脂、酚樹脂、丙烯酸樹脂、丙烯腈-苯乙烯(AS)樹脂、苯并胍胺樹脂、二乙烯苯系樹脂、苯乙烯系樹脂等之粒子。
導電性粒子含有層34於其與第1絕緣性接著劑層30接觸之一面34a對應於下述之模具50之開口51的圖案而形成有凹凸圖案40。於凹凸圖案40之凸部40a配設有導電性粒子32。即,導電性粒子含有層34對應於凹凸圖案40而單層且規則性地配設有導電性粒子32。又,導電性粒子32之頂部露出於凹凸圖案40之凸部40a,且與第1絕緣性接著劑層30接觸。
[硬化度]
又,導電性粒子含有層34係如下所述,於轉印導電性粒子32後,預先對一面34a照射紫外線,之後層壓第1絕緣性接著劑層30。因此,導電性粒子含有層34係進行一面34a側之硬化反應。又,導電性粒子含有層34中,紫外線光被遮住之導電性粒子32之下部,即,比導電性粒子32更接觸第2絕緣性接著劑層31的另一面34b側之硬化度低於其他部位之硬化度。
[氣泡]
導電性粒子含有層34與第1絕緣性接著劑層30之間含有氣泡41。氣泡41於連接使用有異向性導電膜23之電子零件18後,緩和異向性導電膜23中之內部應力,藉此,可防止透明基板12之翹曲。即,異向性導電膜23雖然伴隨著各層30、31、34之接著劑成分之硬化收縮而產生應力,但可藉由導電性粒子含有層34與第1絕緣性接著劑層30之間所含之氣泡41所產 生之應力緩和作用而抑制透明基板12之翹曲。
此時,氣泡41之位置較理想為於導電性粒子32之附近,且於與該導電性粒子32不接觸之位置。其與於連接時應力容易集中於導電性粒子32中有關。於氣泡41過於接近導電性粒子32之情形時,有應力變化急速之擔憂,因此,較理想為適度保持距離而設置。該距離較佳為大於最接近之導電性粒子32之粒徑之0.2倍,更佳為大於0.3倍。於該情形時,作為不設置氣泡41與導電性粒子32之距離上限之原因,可列舉由於導電性粒子32排列,故而上限根據其粒子間距離而變動。再者,此處言及之氣泡41與導電性粒子32之距離係表示氣泡41之端部與導電性粒子32之端部之最短距離。
又,於最鄰接之導電性粒子32之距離相隔粒徑之2倍以上之情形時,導電性粒子32與氣泡41之距離較佳為存在於其中間之區域。於該情形時,氣泡41亦較佳為距離一導電性粒子32相隔粒徑之0.2倍,更佳為相隔大於0.3倍。進而,氣泡41較佳為存在於導電性粒子32之粒子間之中央區域中與其中間點相距粒子間距離之0.4倍以內之範圍,更佳為存在於0.3倍以內之範圍。再者,該情形時之氣泡41之存在範圍由於以該中間點作為基點,故而最大為0.5倍。
導電性粒子含有層34之一面34a利用照射紫外線而硬化,之後層壓第1絕緣性接著劑層30,藉此,形成於該一面34a之凹凸圖案40之凹部40b與第1絕緣性接著劑層30之間含有氣泡41。又,氣泡41對應於凹凸圖案40之凹部40b之排列而規則地內包於導電性粒子含有層34與第1絕緣性接著劑層30之間。此時,雖然混合存在複數個氣泡41及導電性粒子32,但氣泡41與導電性粒子32各自之距離未必必須相等地配置。又,氣泡41之群可直線狀或曲線狀地存在,亦可成為此種線交叉之格子狀。又,此種氣泡群內之間隔可不固定,亦可間斷。
再者,氣泡41亦含有其最大長度未達1μm之微小尺寸之微細泡。即,氣泡41例如亦可為於製造異向性導電膜23之過程中藉由層壓或延伸時之外力而使1μm以上之大小之泡擴散而成為最大長度未達1μm之微細泡者。如此,即便異向性導電膜23中所含之氣泡41為如上所述之微細泡佔據大半之構成,由氣泡41產生之本發明之效果亦不受損。又,於氣泡41之最大長度大於5μm之情形時,由於有成為因連接時之樹脂流動所導致之夾帶、或伴隨其之連接後之空隙產生等之原因之情況,故而較理想為氣泡41之最大長度未達5μm。
又,於成為微細泡之氣泡41配置於導電性粒子32之附近之情形時,藉由氣泡41所獲得之應力緩和之效果亦基於此而表現。例如,於氣泡41偏靠於導電性粒子32之附近之4個部位之情形時,於該4個部位分散並緩和異向性導電膜23之內部應力。因此,可抑制連接體之翹曲。再者,氣泡41係如上所述,由於含有異向性導電膜23之製造過程中藉由層壓或延伸而擴散並成為微細泡者,故而其形狀並無特別限定。
進而,作為本發明之異向性導電膜123之其他實施形態,為了確保導電性粒子132之獨立性而防止短路產生,亦可設為如圖3所示於導電性粒子含有層134所含之絕緣性接著劑133與導電性粒子132之間設置有液狀組成物142之構成。作為液狀組成物142,可應用公知樹脂及溶劑等。例如,於使用連接時有助於硬化之材質作為液狀組成物142之情形時,可使用低分子量之環氧樹脂中較理想的單官能或雙官能者、或低分子量之丙烯酸單體。另一方面,於使用連接時無助於硬化之材質作為液狀組成物142之情形時,可列舉經稀釋之低分子量橡膠或苯氧基樹脂、分子量為數百~數千之增黏劑、沸點為200℃以上之溶劑、調平劑等。
於使用有助於硬化之材質作為液狀組成物142之情形時,由於在連接時液狀組成物142硬化,故而導電性粒子132變得難以於圖3所示 之異向性導電膜123之寬度方向移動,可促進連接後之導電性粒子132之獨立性。即,有助於防止導電性粒子132之連結。另一方面,於使用無助於硬化之材質作為液狀組成物142之情形時,於連接時會促進圖3所示之異向性導電膜123之厚度方向之流動性而有助於導電性粒子132之壓入。因此,可相對地抑制導電性粒子132朝面(橫)方向(圖3所示之異向性導電膜123之寬度方向)之移動。即,無論液狀組成物142是否有助於硬化,均有助於提高連接構造體之導通性能。
又,液狀組成物142係藉由層壓或延伸、或利用異向性導電膜123進行連接時之外力而擴散,藉此顯示與氣泡141同樣之效果。即,認為由液狀組成物所構成之泡亦與上述之氣泡141同樣地緩和異向性導電膜123之內部應力,換而言之,泡並不限於氣泡141,亦包含由液狀組成物142產生者。於由液狀組成物142所構成之泡之情形時,就製法上之情況而言,與導電性粒子132接觸之概率較高。然而,由液狀組成物142所構成之泡由於與氣泡141不同,為液狀,故而推測不易產生上述急速之應力變化,因此,該情形對於泡與導電性粒子132之接觸狀態並無特別限制。
再者,設置液狀組成物142之部位就其製法上之情況而言,未必限定於絕緣性接著劑133與導電性粒子132之間。例如,亦可設置於第1絕緣性接著劑層130與導電性粒子132之間、或第2絕緣性接著劑層131與導電性粒子132之間之任意部位,又,於設置液狀組成物142時,即便成為於氣泡141中含有液狀組成物142之構成,亦發揮與上述相同之效果。其原因在於,由於黏性較高之樹脂占構成物之主要部分,故而含有液狀組成物142之泡之遷移率相對變高,因此難以特定其位置。
[異向性導電膜之製造步驟]
繼而,對於本發明之一實施形態之異向性導電膜23之製造方法進行說明。首先,準備用於排列導電性粒子之模具。模具可使用如圖4所示,例 如規則地形成有供導電性粒子填充之開口51之模具50。模具50中係使用刮漿板等填充導電性粒子32。藉此,導電性粒子32於模具50之表面排列為對應於開口51之圖案之圖案。
模具50之開口51之間隔a例如為3~6μm。如下所述,導電性粒子含有層34與第1絕緣性接著劑層30之間所含之氣泡41之大小係根據該開口51之間隔a而控制,對應於間隔為3~6μm之開口51成為1~5μm。再者,如上所述,氣泡41之大小亦有於製造異向性導電膜23之過程中藉由層壓或延伸時之外力而使1μm以上之大小之泡擴散,成為最大長度未達1μm之微細泡之情形。又,藉由調整模具50之開口51之間隔a或形狀等,而亦可將氣泡41之大小、即最大長度設為1μm以下。
又,模具50係形成為開口51規則性地排列,並且各開口51之開口直徑稍寬於導電性粒子32之直徑,且深度與導電性粒子32之直徑大致相同。藉此,模具50中若填充導電性粒子32,則可單層且規則性地排列導電性粒子32。
如圖5所示,模具50於在開口51填充有導電性粒子32之面層壓光硬化型之接著劑層55。接著劑層55係由其後混合有構成上述導電性粒子含有層34之膜形成樹脂、熱硬化性樹脂、硬化劑、及其他添加劑之有機樹脂黏合劑所構成,並由剝離基材56所支持。剝離基材56可使用異向性導電膜(ACF)中通常使用之例如聚對苯二甲酸乙二酯膜等基材。
接著劑層55係自剝離基材56側藉由加熱按壓頭被加壓而層壓於模具50之形成有開口51之一面,並且被壓入至開口51。藉此,接著劑層55成型對應於開口51之圖案之凹凸圖案40,並且於凹凸圖案40之凸部40a轉印有填充於開口51之導電性粒子32。
繼而,將剝離基材56與接著劑層55一同自模具50剝離。藉此,如圖6所示,形成由剝離基材56所支持之未硬化之導電性粒子含有 層34。導電性粒子含有層34於其與由剝離基材56所支持之面相反側之一面34a形成對應於開口51之圖案之凹凸圖案40。
凹凸圖案40於凸部40a轉印有導電性粒子32。導電性粒子32之一部分32a自凸部40a之上表面露出至外側。又,凹凸圖案40對應於開口51之間隔而形成有凹部40b。
繼而,自導電性粒子含有層34之形成有凹凸圖案40之一面34a側照射紫外線而使其硬化。此處,導電性粒子含有層34由於在凸部40a之導電性粒子32之背側紫外線之照射不充分,故而與導電性粒子32相比之下側,即,與導電性粒子32相比之另一面34b側成為未硬化之狀態。
繼而,如圖7所示,導電性粒子含有層34係於一面34a層壓由剝離基材35所支持之第1絕緣性接著劑層30。此時,導電性粒子含有層34由於藉由紫外線照射而硬化,故而若層壓第1絕緣性接著劑層30,則可於凹凸圖案40之凹部40b與第1絕緣性接著劑層30之間內包氣泡41。又,導電性粒子含有層34可使自凹凸圖案40之凸部40a露出之導電性粒子32之一部分32a與第1絕緣性接著劑層30接觸。
再者,氣泡41之位置由於依存於模具50之凹凸圖案40之凸部40a之位置,故而配置於導電性粒子32之間。因此,氣泡41雖然配置於導電性粒子32附近,但不會成為與導電性粒子32直接接觸之配置。具體而言,氣泡41大多為介隔導電性粒子32之外徑之0.2~0.3倍左右之大小之距離而位於導電性粒子32之外側。認為其起因於在模具50之開口部51之端部與導電性粒子含有層34中所含之絕緣性接著劑33之接觸及剝離。因此,氣泡41變得難以與導電性粒子32鄰接,位於該導電性粒子32之附近者減少。即,氣泡41存在於導電性粒子32之間之比例升高。然而,若為上述圖3所示之含有由液狀組成物142形成之液胞之態樣,則就製法之特徵而言,該液胞與導電性粒子132接觸。
繼而,導電性粒子含有層34於將剝離基材56剝離而露出之另一面34b層壓由剝離基材36所支持之第2絕緣性接著劑層31。藉此,如圖2所示,形成異向性導電膜23。
再者,為了確保導電性粒子132之獨立性而防止產生短路,於製造圖3所示之本發明之另一實施形態之異向性導電膜123時,於導電性粒子132與第1絕緣性接著劑層130之間、或導電性粒子132與導電性粒子含有層134之絕緣性接著劑133之間之至少任一者塗佈或噴霧液體組成物142。於在導電性粒子132與第1絕緣性接著劑層130之間塗佈或噴霧液體組成物142之情形時,將導電性粒子132填充至模具50(參照圖4)後,於以絕緣性接著劑層130進行層壓之前,塗佈或噴霧未到達模具50之底面之程度之極微量之液體組成物142。可緩和與模具50之開口部51之端部之第1絕緣性接著劑層130或絕緣性接著劑133之接觸。
又,於液狀組成物142有助於硬化之情形時,由於促進硬化時之導電性粒子132之獨立性,故而有助於防止連接時之導電性粒子132之連結。另一方面,於液狀組成物142無助於硬化之情形時,由於在連接時有助於導電性粒子132之壓入,故而可促進異向性導電膜123之厚度方向之流動性,相對地抑制向面(橫)方向之移動。即,無論液狀組成物142是否有助於硬化,均有助於提高連接構造體之導通性能。
[使用異向性導電膜之連接步驟]
繼而,對使用本發明之一實施形態之異向性導電膜23之連接步驟進行說明。於經由異向性導電膜23而將電子零件18連接於端子部17a之情形時,首先,將剝離基材35剝離,將露出之第1絕緣性接著劑層30載置於透明電極17之端子部17a上,並自剝離基材36上藉由未圖示之預壓接手段預壓接異向性導電膜23。
繼而,將剝離基材36剝離,於異向性導電膜23上載置電子 零件18後,藉由作為熱壓接手段之加熱按壓頭3而將電子零件18與異向性導電膜23一同向端子部17a側按壓,並使加熱按壓頭3發熱。藉由利用該加熱按壓頭3之熱加壓,異向性導電膜23之第1、第2絕緣性接著劑層30、31顯示流動性,自透明基板12之端子部17a與電子零件18之連接端子18a之間流出。
此處,由於導電性粒子含有層34中,導電性粒子32自凸部40a露出,且與第1絕緣性接著劑層30接觸,故而藉由流出第1絕緣性接著劑層30,而使導電性粒子32與端子部17a接觸。又,導電性粒子含有層34由於導電性粒子32之背側之紫外線之照射不充分而為未硬化狀態,故而藉由利用加熱按壓頭3之熱加壓而與第2絕緣性接著劑層31一同流出,藉此,導電性粒子32亦與電子零件18之連接端子18a接觸。
因此,如圖8所示,異向性導電膜23係導電性粒子32被透明基板12之端子部17a與電子零件18之連接端子18a夾持,並以該狀態被熱硬化。藉此,經由異向性導電膜23而將電子零件18電性、機械連接於端子部17a上。再者,透明基板12之端子部17a與電子零件18之連接端子18a之電性、機械連接並不限於加熱按壓。即,可藉由併用加熱按壓與光照射而硬化並接合,亦可為僅藉由光照射之接合,又,於預壓接中,亦即便利用藉由光熱併用或光照射之硬化,亦並無特別問題。
此時,異向性導電膜23於導電性粒子含有層34與第1絕緣性接著劑層30之間,對應於凹部40b之排列而規則性地含有氣泡41,故而於電子零件18與端子部17a之間產生伴隨硬化收縮之內部應力之情形時,亦可藉由氣泡41之應力緩和作用而減少連接後之透明基板12之翹曲。因此,於使用實現薄型化之透明基板12之液晶顯示面板10中,亦可抑制翹曲之產生,藉此可減少顏色不均。
又,由於異向性導電膜23之導電性粒子32對應於凹凸圖案 40而規則性地單層排列,故而與不規則地摻合導電性粒子之先前之異向性導電膜相比,可儘量減少不參與電子零件18與端子部17a之電性連接之不需要之導電性粒子。進而,藉由配置於導電性粒子32附近之泡,而於導電性粒子32之周邊區域局部地產生應力緩和,但由於該等導電性粒子32本身規則排列,故而藉由該規則性而使效果之表現均勻地遍佈整體,可對其進行控制。
[實施例]
繼而,對於本發明之一實施形態之異向性導電膜之實施例進行說明。於本實施例中,準備變更氣泡之尺寸及絕緣性接著劑層之硬化體系之複數個異向性導電膜之樣品(實施例1~10)、以及不含氣泡之異向性導電膜之樣品(比較例1、2),並分別測定將IC晶片搭載於玻璃基板時之玻璃基板之翹曲量與導通電阻。
實施例及比較例之樣品均係於第1、第2絕緣性接著劑層夾持有導電性粒子含有層之異向性導電膜,且各導電性粒子含有層於其與第1絕緣性接著劑層接觸之一面側形成凹凸圖案,並且導電性粒子單層且規則性地排列於凹部。但於各實施例之樣品中,氣泡內包於導電性粒子含有層與第1絕緣性接著劑層之間,於比較例之樣品中未內包氣泡。
[導電性粒子含有層之製作]
關於導電性粒子含有層,係利用棒式塗佈機將由下述表1及表2所示之摻合組成所構成之有機樹脂黏合劑(固形物成分50%)塗佈於PET膜,並於70℃進行5分鐘熱風乾燥,而製作厚度為5μm之接著層膜。
又,如圖9所示,實施例及比較例之模具係規則性地形成孔徑為5μm見方、孔深度為3μm之開口,準備開口之間隔a為3μm(實施例1及實施例6)、4μm(實施例2、4、5、7、9、10、比較例1、2)、6μm(實施例3及實施例8)之3種。填充於各模具之開口部之導電性粒子係使 用積水化學工業股份有限公司製造之Au-203A(平均粒徑為3μm),並利用刮漿板進行填充。
繼而,利用輥表面溫度為45℃之貼合機將先前製作之接著層膜向填充有導電性粒子之模具進行層壓,其後自模具剝離。藉此,於接著層膜,在一面形成對應於模具之開口圖案之凹凸圖案,並且於凸部轉印有導電性粒子。導電性粒子係規則性地單層排列,並且其一部分自凸部露出至外側。
對該接著層膜自形成有凹凸圖案之一面側照射波長為365nm、累積光量為4000mJ/cm2之UV光,形成導電性粒子含有層。導電性粒子含有層之形成有凹凸圖案之一面側經UV硬化,但於導電性粒子之背側,UV之照射量較低,成為未硬化之狀態。
[絕緣性接著劑層之製作]
絕緣性接著劑層係利用棒式塗佈機將由下述表1及表2所示之摻合組成所構成之有機樹脂黏合劑塗佈於PET膜,並於80℃進行3分鐘熱風乾燥,而製作厚度為5μm之接著層膜。
藉此,製作由PET膜所支持之第1、第2絕緣性接著劑層。
[導電性粒子含有層與絕緣性接著劑層之層壓步驟]
繼而,層壓導電性粒子含有層與絕緣性接著劑層而製作異向性導電膜之樣品。首先,利用輥表面溫度為45℃之貼合機於導電性粒子含有層之形成有凹凸圖案之一面側層壓第1絕緣性接著劑層。
此時,於實施例1~5中,此時,氣泡內包於凹凸圖案之凹部。另一方面,於比較例1、2中,以不使氣泡混入之方式進行層壓。又,於實施例6~10中,以同樣之方式,以內包未達1μm之微細泡之方式進行層壓。
繼而,自導電性粒子含有層之與形成有凹凸圖案之一面相反 側之另一面剝離PET膜,並利用輥表面溫度為45℃之貼合機層壓第2絕緣性接著劑層。
藉此,製作各實施例及比較例之總厚度為20μm之異向性導電膜。
[特性評價]
作為評價元件,使用如下之評價用IC:外形:1.8mm×20mm
厚度:0.5mm
鍍Au凸塊外形:30μm×85μm
鍍Au凸塊高度:15μm。
作為連接評價用IC之評價基材,使用玻璃厚度為0.7mm之ITO塗層玻璃。
形成經由實施例及比較例之異向性導電膜(35mm×24mm)藉由熱加壓而將評價用IC連接於該ITO塗層玻璃之連接體樣品。各實施例及比較例之構裝條件如下。
於實施例1~3、實施例6~8及比較例1、2(陽離子硬化體系)中為180℃-70MPa-5秒鐘,且於加熱按壓頭與評價用IC之間介隔厚度為50μm之鐵氟龍(註冊商標)作為緩衝材料。
於實施例4及實施例9(陰離子硬化體系)中為200℃-70MPa-5秒鐘,且於加熱按壓頭與評價用IC之間介隔厚度為50μm之鐵氟龍(註冊商標)作為緩衝材料。
於實施例5及實施例10(自由基硬化系)中為160℃-70MPa-5秒鐘,且於加熱按壓頭與評價用IC之間介隔厚度為50μm之鐵氟龍(註冊商標)作為緩衝材料。
對於以上之實施例及比較例之各連接體樣品使用數位萬用 表,以四端子法於連接初期與TCT(80℃ 85% 250 H)後測定流通2mA之電流時之連接電阻。又,對各連接體樣品使用觸針式表面粗糙度計(CL-830:小阪研究所股份有限公司製造)自評價基材之ITO塗層玻璃下表面進行掃描,測定評價用IC之連接前後之ITO塗層玻璃之翹曲量(μm),求出其差。將測定結果示於表1及表2。
如表1所示,根據本實施例,由於均在導電性粒子含有層之凹凸圖案之凹部中內包有氣泡,故而可緩和於連接評價用IC後產生於連接部位之內部應力。因此,可抑制連接初期及TCT後之翹曲量,且亦可將TCT後之導通電阻抑制為最大6.0Ω以下,可實現良好之導通電阻。
另一方面,於比較例1中,由於未內包氣泡,故而未發揮產生於評價用IC之連接部位之內部應力之緩和作用,連接初期中之翹曲量變大為15μm。又,於比較例2中,雖添加有應力緩和劑,但與內包有氣泡之實施例1~5相比,連接初期之翹曲量較大為10μm,降低翹曲之效果較小。又,於比較例2中,由於添加應力緩和劑,故而接著劑成分之凝聚力降低,連接可靠性降低,且TCT後之導通電阻亦變高為10Ω。
於實施例4中,翹曲量稍有降低。認為其原因在於:由於將實施例2之硬化體系自陽離子系變更為陰離子系,故而硬化速度低於陽離子系。又,於實施例5中,將實施例2之硬化體系自陽離子系變更為自由基系,結果雖然低溫速硬化性優異,但翹曲量稍有增加。
又,如圖2所示,根據實施例6~10,由於均於導電性粒子含有層之凹凸圖案之凹部、或導電性粒子與第1絕緣性接著劑層之間內包有微細泡,故而與實施例1~5相比,可進一步緩和於連接評價用IC後在連接部位產生之內部應力。即,可知微細泡與較大之氣泡相比,可更加稍微降低翹曲量而緩和於連接部位產生之內部應力。推測其原因在於藉由將氣泡製成微細泡,而大量存在發揮該內部應力之緩和作用之泡,藉此,應力之分散效果進一步提高。
又,與實施例4同樣地,於實施例9中,翹曲量同樣地稍有下降。認為其原因在於:由於將實施例7之硬化體系自陽離子系變更為陰離子系,故而硬化速度低於陽離子系。又,於實施例5與10中,將硬化體系自實施例2或7之陽離子系變更為自由基系,結果雖然低溫速硬化優異, 但翹曲量稍有增加。
23‧‧‧異向性導電膜
30‧‧‧第1絕緣性接著劑層
31‧‧‧第2絕緣性接著劑層
32‧‧‧導電性粒子
33‧‧‧絕緣性接著劑
34‧‧‧導電性粒子含有層
34a‧‧‧一面
34b‧‧‧另一面
35、36‧‧‧剝離基材
40‧‧‧凹凸圖案
40a‧‧‧凸部
40b‧‧‧凹部
41‧‧‧氣泡

Claims (19)

  1. 一種異向性導電膜,其具有:第1絕緣性接著劑層、第2絕緣性接著劑層、以及被該第1絕緣性接著劑層及該第2絕緣性接著劑層夾持且於絕緣性接著劑中含有導電性粒子之導電性粒子含有層,該導電性粒子含有層與該第1絕緣性接著劑層之間含有氣泡,該導電性粒子含有層中,該導電性粒子之下部的硬化度低於其他部位之硬化度,其中,該導電性粒子之下部與該第2絕緣性接著劑層接觸。
  2. 如申請專利範圍第1項之異向性導電膜,其中,該導電性粒子含有層中,該導電性粒子係單層且規則地排列。
  3. 一種異向性導電膜,其具有:第1絕緣性接著劑層、第2絕緣性接著劑層、以及被該第1絕緣性接著劑層及該第2絕緣性接著劑層夾持且於絕緣性接著劑中含有導電性粒子之導電性粒子含有層,該導電性粒子含有層與該第1絕緣性接著劑層之間含有氣泡,該導電性粒子含有層中,該導電性粒子單層且規則地排列。
  4. 如申請專利範圍第1至3項中任一項之異向性導電膜,其中,該導電性粒子含有層中,該導電性粒子之一部分露出於該導電性粒子含有層與該第1絕緣性接著劑層之界面。
  5. 如申請專利範圍第1至3項中任一項之異向性導電膜,其中,該導電性粒子含有層為光硬化型接著劑層。
  6. 如申請專利範圍第1至3項中任一項之異向性導電膜,其中,該第1、第2絕緣性接著劑層之硬化體系為陽離子硬化系、陰離子硬化系或自由 基硬化系中之任一者。
  7. 如申請專利範圍第1至3項中任一項之異向性導電膜,其中,該氣泡之尺寸未達5μm。
  8. 如申請專利範圍第1至3項中任一項之異向性導電膜,其中,該導電性粒子含有層中,含有該導電性粒子之部位的厚度比該導電性粒子間之厚度厚。
  9. 如申請專利範圍第8項之異向性導電膜,其中,該氣泡內包於形成在該導電性粒子間之凹部。
  10. 如申請專利範圍第1至3項中任一項之異向性導電膜,其中,於該第1絕緣性接著劑層與該導電性粒子之間、或該第2絕緣性接著劑層與該導電性粒子之間的任意部位設置有液狀組成物。
  11. 如申請專利範圍第10項之異向性導電膜,其中,該氣泡含有該液狀組成物。
  12. 一種異向性導電膜之製造方法,使導電性粒子排列於具有開口之模具的該開口,將以剝離基材支持光硬化型接著劑層而成之接著膜的該接著劑層,層壓於該模具之排列有該導電性粒子的面,自該剝離基材之上表面將該接著劑層加壓至該模具,將該接著劑層壓入至該開口,將該接著膜自該模具剝離,形成使該導電性粒子自該接著劑層之表面露出一部分而貼合於該表面,並且成型有對應於該模具之凹凸形狀的導電性粒子含有層,對該導電性粒子含有層之形成有凹凸形狀的表面照射光而使該表面硬化,於該導電性粒子含有層之該表面,層壓第1絕緣性接著劑層,使該導電性粒子含有層與該第1絕緣性接著劑層之間含有氣泡, 於該導電性粒子含有層之與該表面相反側之背面,層壓第2絕緣性接著劑層。
  13. 如申請專利範圍第12項之異向性導電膜之製造方法,其中,該導電性粒子係單層且規則地排列於該接著劑層之表面。
  14. 如申請專利範圍第13項之異向性導電膜之製造方法,其中,該導電性粒子含有層中,該導電性粒子之下部的硬化度低於其他部位之硬化度,且,該導電性粒子之下部與該第2絕緣性接著劑層接觸。
  15. 如申請專利範圍第12至14項中任一項之異向性導電膜之製造方法,其中,對在該模具之排列有該導電性粒子的該面層壓該接著膜前之該面、或在該導電性粒子含有層之該表面層壓第1絕緣性接著劑層前的該表面,塗佈或噴霧極微量之液體組成物。
  16. 一種連接體之製造方法,其係使用申請專利範圍第1至11項中任一項之異向性導電膜而將第1電子零件之端子與第2電子零件之端子進行異向性導電連接而成的連接體之製造方法,於該第1電子零件上暫貼該異向性導電膜之該第1絕緣性接著劑層,於該第2絕緣性接著劑層上暫時搭載該第2電子零件,自該第2電子零件上利用加熱按壓或光照射而進行接合。
  17. 如申請專利範圍第16項之連接體之製造方法,其中,該導電性粒子含有層在與該第1絕緣性接著劑層接觸之一面設置有凹凸形狀,該異向性導電膜係將含有該導電性粒子之凸部朝向該第1電子零件側暫貼。
  18. 一種連接方法,係使用申請專利範圍第1至11項中任一項之異向性導電膜而將第1電子零件之端子與第2電子零件之端子進行異向性導電連接, 於該第1電子零件上暫貼該異向性導電膜之該第1絕緣性接著劑層,於該第2絕緣性接著劑層上暫時搭載該第2電子零件,自該第2電子零件上利用加熱按壓或光照射而進行接合。
  19. 如申請專利範圍第18項之連接方法,其中,該導電性粒子含有層在與該第1絕緣性接著劑層接觸之一面設置有凹凸形狀,該異向性導電膜係將含有該導電性粒子之凸部朝向該第1電子零件側暫貼。
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