TWI267942B - MONOS device having buried metal silicide bit line - Google Patents
MONOS device having buried metal silicide bit line Download PDFInfo
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- TWI267942B TWI267942B TW091136467A TW91136467A TWI267942B TW I267942 B TWI267942 B TW I267942B TW 091136467 A TW091136467 A TW 091136467A TW 91136467 A TW91136467 A TW 91136467A TW I267942 B TWI267942 B TW I267942B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 58
- 239000002184 metal Substances 0.000 title claims abstract description 58
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title abstract 7
- 229910021332 silicide Inorganic materials 0.000 title abstract 5
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims description 27
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 25
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000003870 refractory metal Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- -1 metal oxide nitride Chemical class 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052987 metal hydride Inorganic materials 0.000 claims 1
- 150000004681 metal hydrides Chemical class 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 14
- 239000007943 implant Substances 0.000 description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 229910001507 metal halide Inorganic materials 0.000 description 6
- 150000005309 metal halides Chemical class 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- JCVUJSKIZWWFJA-UHFFFAOYSA-N [O].O=O Chemical compound [O].O=O JCVUJSKIZWWFJA-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 240000004760 Pimpinella anisum Species 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical group [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
1267942 五、發明說明(1) [發明所屬之技術領域] 本發明有關一種半導體裝置製造之領域,尤指一種金 屬氧氮氧半導體(MONOS)單元之製造。 [先前技術] 參照第1圖,其係顯示典型之先前技術金屬氧氮氧半 導體(MONOS, metal oxide nitride oxide
semiconductor)單元。該單元包括一基材i〇,在該基材 1 0中埋置有源極1 2及汲極1 4,而在該基材1 〇之上方則置有 氧氮氧(0 N 0 )結構1 6,該氧氮氧結構1 6具有夾設於兩氧化 物層1 8及2 0之間的氮化物層1 7,該氧氮氧結構1 6之上方置 有閘極導體2 2,而在該氧氮氧結構1 6之下則形成一通道15 於該源極1 2與該汲極1 4之間。 鼠化物層1 供保留機制(retention mechanism) 以編程記憶體單元,具體而言,當提供編程電壓至源極
1 2、汲極1 4以及閘極導體2 2時,電子將朝汲極1 4流動。根 據熱電子注入現象(hot electron injection phenomenon),部分熱電子會穿透氧化矽層18的下層(尤 其是該氧化物層1 8之下層為較薄者),然後這些熱電子便 聚集於氮化物層1 7中,如於先前技術中已眾所周知者,氣 化物層1 7保留了列於鄰近汲極1 4之集中區域所接收的電荷 2 4,當電荷2 4比該通道1 5之其他區域的臨界值 ° (threshold)為高時,集中的電荷24即大幅升高該記情 體單元之通道部份的臨界值。 " 當存在集中的電荷2 4時(意即記憶體單元已予編程
92246.ptd
1267942 五、發明說明(2) ),在讀取記憶體單元之期間,該記憶體單元升高之臨界 值會使記憶體單元無法進入導電之狀態。若不存在集中的 電荷2 4時,則在閘極導體2 2上之讀取電壓能克服較之為低 之臨界值,以轉化通道1 5並使該通道1 5導電。 可在基材中植入摻雜物以形成埋設位元線(b u r i e d bit 1 ines),該等位元線係受限於半導體裝置之尺寸比 例(s c a 1 i ng),並且亦受限於位元線之電阻,因此亟需 金屬氧氮氧半導體裝置中具有極低電阻之埋設位元線,以 藉之縮小位元線之尺寸比例並且縮小記憶體單元之大小。 發明内容 本發明之實施例可滿足此需求及其他需求,本發明提 供一種製造金屬氧氮氧半導體(MONOS,metal oxide nitride oxide semiconductor) 裝置之方法,該方法之 步驟包括:於基材上形成電荷捕捉介電層;以及依照位元 線圖案蝕刻出一貫通該電荷捕捉介電層之凹部,然後在該 凹部中形成金屬矽化物位元線。 使用位元線中之金屬矽化物位元線可提供電阻非常低 之位元線以縮小位元線寬度,而縮小位元線寬度可減少位 元線之接觸頻率並縮小記憶體單元之大小,此外,亦可提 供位元線之平面結構(planar architecture)。 在本發明之特定實施例中,雷射熱退火製程係用以於 基材中之凹部内形成金屬矽化物,使用雷射熱退火可使金 屬矽化物以可控制之方式形成,其因在於雷射熱退火具有 較低之熱消耗,且雷射能量能精確地施加於欲矽化之區
92246.ptd 第7頁 1267942 五、發明說明(3) 域。 本發明之實施例提供一種包括基材、在該基材上之電 荷捕捉介電層以及在該電荷捕捉介電層中之凹部的金屬氧 氮氧半導體裝置,以符合前述之需求。其中,在該凹部中 係設置有金屬矽化物位元線。 本發明之前述特徵與其他特徵、實施態樣及優點將由 本發明之下列詳細說明結合所附圖式而更為明顯易懂。 [實施方式] 本發明係用以解決與具有埋設位元線之金屬氧氮氧半 導體裝置有關之問題,具體而言,本發明降低在金屬氧氮 氧半導體裝置中之埋設位元線的電阻,而這些位元線通常 是由植入離子所形成,透過這些金屬矽化物位元線之形 成,本發明可產生電阻極低之位元線及縮小該些位元線之 寬度,並且減少這些位元線之接觸頻率。再者,使用金屬 矽化物位元線可縮小記憶體單元之大小。 第2圖為一具有基材3 0之金屬氧氮氧半導體之單元結 構之部份的橫斷面圖,在第2圖中之基材3 0為P型基材 (P-substrate)。該基材30係覆蓋有電荷捕捉介電層 3 2,在下列之實施例中,該電荷捕捉介電層3 2係稱為氧氮 氧層3 2,然而,在本發明之其他實施例中,可應用其他類 型之電荷捕捉層,諸如氧化物/氧氮矽化物/氧化物層等為 熟習該項技藝者所周知者。作為說明氧氮氧層3 2之實施 例,一底層氧化物層3 4係於該基材3 0之上成長出所欲之厚 度,之後於該底層氧化物層3 4之上沉積氮化物層3 6,再藉
92246.ptd 第8頁 1267942 五、發明說明(4) 由氮化物之氧化、或沉積或兩者之結合而產生上層氧化物 層3 8。該氧氮氧層3 2之形成乃為熟習該項技藝者已周知 者,並且可應用任何習知的方法技術來產生該氧氮氧層 32 ° 接下來的步驟包括沉積位元線光罩4 0 (通常以習知方 式將光阻4 2圖案化),用以在晶片之記憶陣列部份内之佈 線(1 a y 〇 u t)形成出位元線,以及形成源極線以及沒極 線。第3圖之側視圖顯示記憶陣列部份内的金屬氧氮氧半 導體之部份具有圖案化之光阻4 2,位元線光罩4 0之光阻4 2 縱列定義出未設置位元線之區域,這些區域即為該裝置之 通道的形成位置。 參閱第4圖,該氧氮氧層32係依照該位元線光蓋40而 蝕刻貫穿,持續該蝕刻處理以穿透該氧氮氧層3 2並且進入 該基材3 0至一特定深度,該蝕刻步驟可應用反應離子蝕刻 之非等向餘刻(a n i s 〇 t r 〇p i c e t c h)。在進行餘刻步驟之 後,藉由習知之光阻移除技術將該位元線光罩4 0予以移 除。 在完成蝕刻製程以於基材3 0中形成凹部4 4之後,於該 基材3 0及該氧氮氧層3 2之上沉積耐火金屬層4 6,該耐火金 屬層4 6可為一些諸如鎢、始、鎳、鈦、始、把等之任何不 同的材料,已知這些金屬可與矽反應以形成金屬矽化物, 而該耐火金屬層4 6之沉積則可以習知之方式進行。 第6圖顯示第5圖之結構在進行退火步驟後於該凹部4 4 内形成金屬石夕化物位元線4 8之結構。該金屬石夕化物位元線
92246.ptd 第9頁 1267942 五、發明說明(5) 48宜為以低電阻態(l〇w resistance phase)之特定金屬 矽化物所形成者,可應用快速熱退火(RTA,rapid thermal anneal ing)製程,使該耐火金屬層46在該基材 3 0中與矽反應以形成金屬矽化物。然而,在本發明之特定 貫施例中’亦可使用雷射熱退火(LTA, laser thermal anneal ing)製程以使金屬與矽反應,在第7圖中之箭頭5 0 即指出此製程。使用雷射熱退火形成金屬矽化物之部份優 點在於雷射熱退火之熱消耗較低,並且以雷射熱退火可精 確控制施加雷射能量之區域,換言之,雷射能量可直接而 精確地施加於該凹部4 4以退火金屬矽化物。 雷射之能量密度(energy fluence)乃熟習該項技藝者 可輕易地決定者,並將視所欲形成之金屬矽化物的類型、 所欲之金屬石夕化物的厚度等而定,雷射熱退火之參數舉例 而吕’包括提供在約5 0 m J / c m 2至約1 · 3 J / c m之間的能量密 度。 第6圖亦顯示在已完成退火製程且已形成金屬矽化物 之後將任何未反應之金屬從結構中移除後之結構,該等未 反應物之移除技術乃熟習該項技藝者已周知者,而可視已 形成之金屬矽化物的特定類型而定。 在第7圖中,進行離子植入製程以於該基材3 〇中形成 源極/汲極區5 2,該源極/汲極區5 2係經由該金屬矽化物位 元線4 8植入砷而形成者,使得該源極/汲極區5 2位於該金 屬石夕化物位元線4 8之下。習用之光罩及植入製程可用來形 成該源極/汲極區5 2,熟習該項技藝者可選擇適當的使用
92246.ptd 第10頁 1267942 五、發明說明(6) 量(dosage)與植入能量,然而,應了解的是當使用自我 對準之植入物,以由該植入物自行對準至氧氮氧結構時, 則不一定須要該光罩步驟。 雖然在本實施例中所說明之離子植入製程係於進行矽 化 (s i 1 i c i d a t i ο η )製程之後實施,但在本發明之其他實 施例中,可在矽化製程之前進行離子植入,舉例來說,在 形成位元線光罩4 0之後,施予適當選定之植入能量,能植 入該摻雜物。然而,較佳實施例係於蝕刻後立刻植入摻雜 物,藉此避免移除已植入之不欲移除的摻雜物。 如第8圖所示,位元線氧化物5 4係形成該金屬矽化物 位元線48之上方的凹部44中,該位元線氧化物54可在氧化 操作中熱成長於該金屬矽化物位元線4 8之上,而氧化製程 可為約8 0 0°C之低溫氧化。另外,亦可沉積該位元線氧化 物5 4,在形成該位元線氧化物5 4之後,可在該位元線氧化 物5 4及該氧氮氧層3 2之上沉積多晶矽或金屬之字元線5 6, 多晶矽之字元線5 6係依字元線光罩(顯示於第9圖)而形 成,而該位元線氧化物5 4則可包含該氧氮氧層3 2之上層氧 化物層3 8之部份或全部。 接著提供低電阻之石夕化物5 8於該多晶石夕之字元線5 6之 上方,此矽化物5 8之形成可藉由沉積耐火金屬在該多晶矽 之字元線5 6上及退火(例如快速熱退火或雷射熱退火)所 完成,不在多晶矽上之金屬則將覆蓋該氧氮氧層3 2之氧化 物或該位元線氧化物5 4,因此不會與氧化物反應而形成金 屬石夕化物,而未反應之金屬可由習知技術移除。
92246.ptd 第11頁 1267942 五、發明說明(7) 如在第1 0圖中之所得結構所說明者,本發明之方法技 術係提供具有埋設金屬矽化物位元線4 8之金屬氧氮氧半導 體裝置,所創造出之金屬氧氮氧半導體裝置具有極低電阻 之位元線、可提高裝置效能以及允許位元線寬度之縮小並 且亦可縮小記憶體單元之尺寸,再者,亦可降低該位元線 之接觸頻率,而本結構之另一個優點則為金屬矽化物位元 線之使用係提供了平面結構。 在另一個實施例中,如第1 1圖所說明者,並未蝕刻該 基材3 0,而僅將該氧氮氧層3 2形成於該基材3 0上,而該金 屬矽化物位元線4 8係形成於該基材3 0上。 雖然已詳細說明及顯示本發明,但應清楚了解的是這 些詳細說明與顯示僅為圖式說明及範例,而且並非以此為 限,本發明之範疇係以所附之申請專利範圍所界定。
92246.ptd 第12頁 1267942 圖式簡單說明 [圖式簡单說明] 第1圖為顯示先前技術之金屬氧氮氧半導體記憶體單 元之示意圖。 第2圖為在基材上形成氧氮氧層後之金屬氧氮氧半導 體裝置之部份橫斷面圖。 第3圖顯示根據本發明之實施例在氧氮氧層上形成位 元線光罩後的第2圖之結構。 第4圖說明根據本發明之實施例將凹部蝕刻通過該氧 氮氧層並進入該基材中之後的第3圖之結構。 第5圖顯示沉積耐火金屬層後的第4圖之結構。 第6圖說明於根據本發明之實施例進行退火處理以形 成金屬矽化物後並於其後將未反應之金屬從結構中移除的 第5圖之結構。 第7圖顯示根據本發明之實施例遮蓋並植入源極/汲極 區後的第6圖之結構。 第8圖說明根據本發明之實施例在金屬矽化物位元線 之上形成位元線氧化物後的第7圖之結構。 第9圖說明根據本發明之實施例已將多晶矽字元線沉 積於該氧氮氧層以及該位元線氧化物之上後的第8圖之結 構。 第1 0圖說明根據本發明之實施例將低電阻矽化物形成 於多晶矽字元線上後的第9圖之結構。 第1 1圖顯示本發明之另一實施例。
92246.ptd 第13頁 1267942
922.46. ptd 第14頁
Claims (1)
1267942 案號 91136467 修正 Hr J.匕 π 六 1 · m 讀 善 II it 修 正 後 是0 >52. 變 申請專利範圍 一種形成金屬氧氮氧半導體(MONOS,metal oxide nitride oxide semiconductor)裝置之方法,該方法 包括下列步驟: 於基材(30)上形成電荷捕捉介電層(32); 依照位元線圖案蝕刻出貫穿該電荷捕捉介電層 (3 2)之凹部(44);以及 在該凹部(44)中形成金屬矽化物位元線(48 I 3. 4. 5. 6 · 如申請專利範 方法,其中, 包括: 於該凹部 於該凹部 (4 4)中形成 如申請專利範 方法,復包括 金屬矽化物位 如申請專利範 方法,復包括 成在氧化物層 如申請專利範 方法,其中, 5 0 m J / c m 2至約 如申請專利範 圍第1項之形成金屬氧氮氧半導體裝置之 該形成金屬矽化物位元線(48)之步驟 (4 4)中沉積耐火金屬層(46);以及 (4 4)之内進行雷射熱退火以在該凹部 金屬秒化物位元線(48)。 圍第2項之形成金屬氧氮氧半導體裝置之 植入摻雜物於該基材(3 0)中,以在該 元線(4 8)之下形成源極/汲極區(5 2 )。 圍第3項之形成金屬氧氮氧半導體裝置之 於該凹部中該金屬矽化物位元線之上形 (54)。 圍第2項之形成金屬氧氮氧半導體裝置之 該雷射熱退火之步驟包括施加具有在約 1. 3 J / cm乏間的能量密度之雷射能量。 圍第1項之形成金屬氧氮氧半導體裝置之
92246(修正版).pic 第15頁 1267942 _案號 91136467_年 /> 月么曰_ifi_ 六、申請專利範圍 方法,其中,該電荷捕捉介電層(3 2)為氧氮氧層。 7. —種金屬氧氮氧半導體(MONOS,metal oxide nitride oxide semiconductor),包括: 基材(30); 在該基材(30)上之電荷捕捉介電層(32); 在該電荷捕捉介電層(32)中之凹部(44) •,以 及 在該凹部中(44)之金屬矽化物位元線(48)。 8. 如申請專利範圍第7項之金屬氧氮氧半導體,其中,該 金屬矽化物位元線(4 8)為埋設位元線。 9. 如申請專利範圍第8項之金屬氧氮氧半導體,復包括在 該凹部中之金屬矽化物位元線上之氧化物以及在該電 荷捕捉介電層與氧化物之上的字元線。 1 0.如申請專利範圍第9項之金屬氧氮氧半導體,復包括在 該金屬矽化物位元線下之源極/汲極區。 11.如申請專利範圍第1 0項之金屬氧氮氧半導體,其中, 該金屬矽化物位元線包括雷射熱退火之金屬矽化物。 1 2.如申請專利範圍第11項之金屬氧氮氧半導體,其中, 該電荷捕捉介電層為氧氮氧(0N0, oxide-nitride-oxide)層 。 1 3.如申請專利範圍第1 2項之金屬氧氮氧半導體,其中, 該凹部延伸至該基材中且該金屬矽化物位元線係於該 凹部中。
92246(修正版).pic 第16頁
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2002
- 2002-12-11 AU AU2002357826A patent/AU2002357826A1/en not_active Abandoned
- 2002-12-11 CN CNB028251733A patent/CN1311557C/zh not_active Expired - Lifetime
- 2002-12-11 JP JP2003555586A patent/JP4681227B2/ja not_active Expired - Fee Related
- 2002-12-11 WO PCT/US2002/039781 patent/WO2003054964A2/en active Application Filing
- 2002-12-11 EP EP02792367.1A patent/EP1456885B1/en not_active Expired - Lifetime
- 2002-12-11 KR KR1020047009736A patent/KR100948199B1/ko not_active IP Right Cessation
- 2002-12-18 TW TW091136467A patent/TWI267942B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100948199B1 (ko) | 2010-04-15 |
WO2003054964A3 (en) | 2004-03-04 |
CN1311557C (zh) | 2007-04-18 |
US6828199B2 (en) | 2004-12-07 |
AU2002357826A8 (en) | 2003-07-09 |
JP2005514768A (ja) | 2005-05-19 |
JP4681227B2 (ja) | 2011-05-11 |
EP1456885A2 (en) | 2004-09-15 |
AU2002357826A1 (en) | 2003-07-09 |
US20030119314A1 (en) | 2003-06-26 |
WO2003054964A2 (en) | 2003-07-03 |
TW200400588A (en) | 2004-01-01 |
KR20040075021A (ko) | 2004-08-26 |
CN1605128A (zh) | 2005-04-06 |
EP1456885B1 (en) | 2016-10-12 |
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