CN1311557C - 具有埋设金属硅化物位线的金属氧氮氧半导体装置 - Google Patents
具有埋设金属硅化物位线的金属氧氮氧半导体装置 Download PDFInfo
- Publication number
- CN1311557C CN1311557C CNB028251733A CN02825173A CN1311557C CN 1311557 C CN1311557 C CN 1311557C CN B028251733 A CNB028251733 A CN B028251733A CN 02825173 A CN02825173 A CN 02825173A CN 1311557 C CN1311557 C CN 1311557C
- Authority
- CN
- China
- Prior art keywords
- bit line
- oxide
- metal silicide
- recess
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 78
- 239000002184 metal Substances 0.000 title claims abstract description 78
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 48
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 title 1
- 201000006747 infectious mononucleosis Diseases 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 9
- 239000007943 implant Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000003870 refractory metal Substances 0.000 claims description 2
- FEWHDZOJQQLPEN-UHFFFAOYSA-N [O].[N].[O] Chemical compound [O].[N].[O] FEWHDZOJQQLPEN-UHFFFAOYSA-N 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 238000003860 storage Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 5
- GWFXMCXJFOEMNQ-UHFFFAOYSA-N [O].O=[N] Chemical class [O].O=[N] GWFXMCXJFOEMNQ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 210000004483 pasc Anatomy 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- -1 metal oxide nitride Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910014299 N-Si Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/022,798 | 2001-12-20 | ||
US10/022,798 US6828199B2 (en) | 2001-12-20 | 2001-12-20 | Monos device having buried metal silicide bit line |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1605128A CN1605128A (zh) | 2005-04-06 |
CN1311557C true CN1311557C (zh) | 2007-04-18 |
Family
ID=21811503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028251733A Expired - Lifetime CN1311557C (zh) | 2001-12-20 | 2002-12-11 | 具有埋设金属硅化物位线的金属氧氮氧半导体装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6828199B2 (zh) |
EP (1) | EP1456885B1 (zh) |
JP (1) | JP4681227B2 (zh) |
KR (1) | KR100948199B1 (zh) |
CN (1) | CN1311557C (zh) |
AU (1) | AU2002357826A1 (zh) |
TW (1) | TWI267942B (zh) |
WO (1) | WO2003054964A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110021559A (zh) * | 2018-01-09 | 2019-07-16 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4545401B2 (ja) * | 2003-07-22 | 2010-09-15 | パナソニック株式会社 | 半導体装置の製造方法 |
US20060084268A1 (en) * | 2004-10-15 | 2006-04-20 | Martin Verhoeven | Method for production of charge-trapping memory cells |
CN100552921C (zh) | 2005-01-24 | 2009-10-21 | 斯班逊有限公司 | 半导体装置及其制造方法 |
US8435873B2 (en) * | 2006-06-08 | 2013-05-07 | Texas Instruments Incorporated | Unguarded Schottky barrier diodes with dielectric underetch at silicide interface |
KR100739532B1 (ko) * | 2006-06-09 | 2007-07-13 | 삼성전자주식회사 | 매몰 비트라인 형성 방법 |
US7678654B2 (en) * | 2006-06-30 | 2010-03-16 | Qimonda Ag | Buried bitline with reduced resistance |
US8642441B1 (en) | 2006-12-15 | 2014-02-04 | Spansion Llc | Self-aligned STI with single poly for manufacturing a flash memory device |
US8486782B2 (en) | 2006-12-22 | 2013-07-16 | Spansion Llc | Flash memory devices and methods for fabricating the same |
KR101149043B1 (ko) * | 2009-10-30 | 2012-05-24 | 에스케이하이닉스 주식회사 | 매립형 비트라인을 구비하는 반도체 장치 및 그 제조방법 |
KR101172272B1 (ko) * | 2010-12-30 | 2012-08-09 | 에스케이하이닉스 주식회사 | 매립비트라인을 구비한 반도체장치 제조 방법 |
US8853768B1 (en) | 2013-03-13 | 2014-10-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of fabricating MONOS semiconductor device |
KR102600998B1 (ko) | 2016-09-28 | 2023-11-13 | 삼성전자주식회사 | 반도체 장치 |
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US5168334A (en) | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
EP0368097A3 (en) | 1988-11-10 | 1992-04-29 | Texas Instruments Incorporated | A cross-point contact-free floating-gate memory array with silicided buried bitlines |
JP2957283B2 (ja) * | 1990-12-06 | 1999-10-04 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法及び半導体装置 |
US5670297A (en) | 1991-12-30 | 1997-09-23 | Sony Corporation | Process for the formation of a metal pattern |
JP2964993B2 (ja) * | 1997-05-28 | 1999-10-18 | 日本電気株式会社 | 半導体記憶装置 |
US6350643B1 (en) * | 1997-12-18 | 2002-02-26 | Advanced Technology Materials, Inc. | Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom |
US6121134A (en) * | 1998-04-21 | 2000-09-19 | Micron Technology, Inc. | High aspect ratio metallization structures and processes for fabricating the same |
TW379417B (en) * | 1998-06-04 | 2000-01-11 | United Semiconductor Corp | Buried bitline structure and the manufacture method |
US6261908B1 (en) | 1998-07-27 | 2001-07-17 | Advanced Micro Devices, Inc. | Buried local interconnect |
US6355543B1 (en) * | 1998-09-29 | 2002-03-12 | Advanced Micro Devices, Inc. | Laser annealing for forming shallow source/drain extension for MOS transistor |
US7157314B2 (en) * | 1998-11-16 | 2007-01-02 | Sandisk Corporation | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6156654A (en) | 1998-12-07 | 2000-12-05 | Chartered Semiconductor Manufacturing Ltd. | Pulsed laser salicidation for fabrication of ultra-thin silicides in sub-quarter micron devices |
KR100699608B1 (ko) * | 1999-03-09 | 2007-03-23 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 비휘발성 메모리를 포함하는 반도체 디바이스 |
KR100325472B1 (ko) * | 1999-04-15 | 2002-03-04 | 박종섭 | 디램 메모리 셀의 제조 방법 |
US6210995B1 (en) * | 1999-09-09 | 2001-04-03 | International Business Machines Corporation | Method for manufacturing fusible links in a semiconductor device |
JP3762584B2 (ja) * | 1999-09-20 | 2006-04-05 | 富士通株式会社 | 半導体集積回路装置 |
DE19946435A1 (de) * | 1999-09-28 | 2001-04-05 | Infineon Technologies Ag | Integrierter Halbleiter-Festwertspeicher |
US6177318B1 (en) * | 1999-10-18 | 2001-01-23 | Halo Lsi Design & Device Technology, Inc. | Integration method for sidewall split gate monos transistor |
US6248635B1 (en) * | 1999-10-25 | 2001-06-19 | Advanced Micro Devices, Inc. | Process for fabricating a bit-line in a monos device using a dual layer hard mask |
US6248633B1 (en) * | 1999-10-25 | 2001-06-19 | Halo Lsi Design & Device Technology, Inc. | Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory |
US6326268B1 (en) * | 1999-10-25 | 2001-12-04 | Advanced Micro Devices, Inc. | Method of fabricating a MONOS flash cell using shallow trench isolation |
KR100335498B1 (ko) * | 1999-12-22 | 2002-05-08 | 윤종용 | 반도체 소자의 퓨즈부 구조 및 그 형성방법 |
US6420264B1 (en) * | 2000-04-12 | 2002-07-16 | Ultratech Stepper, Inc. | Method of forming a silicide region in a Si substrate and a device having same |
US6275414B1 (en) * | 2000-05-16 | 2001-08-14 | Advanced Micro Devices, Inc. | Uniform bitline strapping of a non-volatile memory cell |
US6365446B1 (en) * | 2000-07-03 | 2002-04-02 | Chartered Semiconductor Manufacturing Ltd. | Formation of silicided ultra-shallow junctions using implant through metal technology and laser annealing process |
JP4051175B2 (ja) * | 2000-11-17 | 2008-02-20 | スパンション エルエルシー | 不揮発性半導体メモリ装置および製造方法 |
US6566200B2 (en) | 2001-07-03 | 2003-05-20 | Texas Instruments Incorporated | Flash memory array structure and method of forming |
US6413821B1 (en) * | 2001-09-18 | 2002-07-02 | Seiko Epson Corporation | Method of fabricating semiconductor device including nonvolatile memory and peripheral circuit |
JP2003163289A (ja) * | 2001-11-27 | 2003-06-06 | Mitsubishi Electric Corp | 半導体メモリの製造方法、及び該半導体メモリを含む半導体装置の製造方法 |
US20050168334A1 (en) * | 2004-01-29 | 2005-08-04 | Junell Clint W. | Method and system for monitoring environmental events |
US20060156654A1 (en) * | 2005-01-20 | 2006-07-20 | Andersen Corporation | Clad window frame with improved sealing |
-
2001
- 2001-12-20 US US10/022,798 patent/US6828199B2/en not_active Expired - Lifetime
-
2002
- 2002-12-11 WO PCT/US2002/039781 patent/WO2003054964A2/en active Application Filing
- 2002-12-11 EP EP02792367.1A patent/EP1456885B1/en not_active Expired - Lifetime
- 2002-12-11 JP JP2003555586A patent/JP4681227B2/ja not_active Expired - Fee Related
- 2002-12-11 CN CNB028251733A patent/CN1311557C/zh not_active Expired - Lifetime
- 2002-12-11 KR KR1020047009736A patent/KR100948199B1/ko not_active IP Right Cessation
- 2002-12-11 AU AU2002357826A patent/AU2002357826A1/en not_active Abandoned
- 2002-12-18 TW TW091136467A patent/TWI267942B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110021559A (zh) * | 2018-01-09 | 2019-07-16 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
CN110021559B (zh) * | 2018-01-09 | 2021-08-24 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100948199B1 (ko) | 2010-04-15 |
AU2002357826A1 (en) | 2003-07-09 |
WO2003054964A2 (en) | 2003-07-03 |
EP1456885A2 (en) | 2004-09-15 |
TWI267942B (en) | 2006-12-01 |
CN1605128A (zh) | 2005-04-06 |
WO2003054964A3 (en) | 2004-03-04 |
JP4681227B2 (ja) | 2011-05-11 |
TW200400588A (en) | 2004-01-01 |
US6828199B2 (en) | 2004-12-07 |
US20030119314A1 (en) | 2003-06-26 |
EP1456885B1 (en) | 2016-10-12 |
KR20040075021A (ko) | 2004-08-26 |
JP2005514768A (ja) | 2005-05-19 |
AU2002357826A8 (en) | 2003-07-09 |
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