CN1193414A - 浮栅非易失性存储器和制造这种器件的方法 - Google Patents
浮栅非易失性存储器和制造这种器件的方法 Download PDFInfo
- Publication number
- CN1193414A CN1193414A CN97190506A CN97190506A CN1193414A CN 1193414 A CN1193414 A CN 1193414A CN 97190506 A CN97190506 A CN 97190506A CN 97190506 A CN97190506 A CN 97190506A CN 1193414 A CN1193414 A CN 1193414A
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon layer
- mos transistor
- silicon
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 229910021332 silicide Inorganic materials 0.000 claims description 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 230000008901 benefit Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- -1 boron ion Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96200791.0 | 1996-03-22 | ||
EP96200791 | 1996-03-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1193414A true CN1193414A (zh) | 1998-09-16 |
CN1143397C CN1143397C (zh) | 2004-03-24 |
Family
ID=8223809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB971905061A Expired - Fee Related CN1143397C (zh) | 1996-03-22 | 1997-03-10 | 浮栅非易失性存储器和制造这种器件的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5879990A (zh) |
EP (1) | EP0827634B1 (zh) |
JP (1) | JP4223551B2 (zh) |
KR (1) | KR100474631B1 (zh) |
CN (1) | CN1143397C (zh) |
DE (1) | DE69707382T2 (zh) |
TW (1) | TW347567B (zh) |
WO (1) | WO1997036332A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100343978C (zh) * | 2004-06-23 | 2007-10-17 | 上海先进半导体制造有限公司 | 制造双层多晶硅存储器元件的方法 |
US7652321B2 (en) | 2004-03-08 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
CN1841754B (zh) * | 2005-03-12 | 2010-12-15 | 三星电子株式会社 | Nor型混合多位非易失性存储器件及其操作方法 |
CN101964328B (zh) * | 2009-07-24 | 2012-12-12 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
CN103579121A (zh) * | 2012-07-18 | 2014-02-12 | 钜晶电子股份有限公司 | 半导体结构的制造方法 |
CN105789036A (zh) * | 2014-12-25 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和电子装置 |
CN106298674A (zh) * | 2015-05-25 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | 存储器及其形成方法 |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3666973B2 (ja) * | 1996-03-07 | 2005-06-29 | ローム株式会社 | 半導体素子および半導体素子の製造方法 |
US5748547A (en) * | 1996-05-24 | 1998-05-05 | Shau; Jeng-Jye | High performance semiconductor memory devices having multiple dimension bit lines |
US7064376B2 (en) * | 1996-05-24 | 2006-06-20 | Jeng-Jye Shau | High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines |
US20050036363A1 (en) * | 1996-05-24 | 2005-02-17 | Jeng-Jye Shau | High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines |
JPH10154802A (ja) * | 1996-11-22 | 1998-06-09 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法 |
TW360951B (en) * | 1997-04-01 | 1999-06-11 | Nxp Bv | Method of manufacturing a semiconductor device |
US6040216A (en) * | 1997-08-11 | 2000-03-21 | Mosel Vitelic, Inc. | Method (and device) for producing tunnel silicon oxynitride layer |
US6127224A (en) * | 1997-12-31 | 2000-10-03 | Stmicroelectronics, S.R.L. | Process for forming a non-volatile memory cell with silicided contacts |
JPH11265987A (ja) | 1998-01-16 | 1999-09-28 | Oki Electric Ind Co Ltd | 不揮発性メモリ及びその製造方法 |
US6846739B1 (en) * | 1998-02-27 | 2005-01-25 | Micron Technology, Inc. | MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer |
KR20010040845A (ko) * | 1998-02-27 | 2001-05-15 | 인피니언 테크놀로지스 아게 | 전기적 프로그램 가능 메모리 셀 장치 및 그의 제조 방법 |
US6124157A (en) * | 1998-03-20 | 2000-09-26 | Cypress Semiconductor Corp. | Integrated non-volatile and random access memory and method of forming the same |
US6207991B1 (en) | 1998-03-20 | 2001-03-27 | Cypress Semiconductor Corp. | Integrated non-volatile and CMOS memories having substantially the same thickness gates and methods of forming the same |
US6034388A (en) * | 1998-05-15 | 2000-03-07 | International Business Machines Corporation | Depleted polysilicon circuit element and method for producing the same |
US6159795A (en) * | 1998-07-02 | 2000-12-12 | Advanced Micro Devices, Inc. | Low voltage junction and high voltage junction optimization for flash memory |
KR100297712B1 (ko) * | 1998-07-23 | 2001-08-07 | 윤종용 | 고집적화를위한불휘발성메모리및그제조방법 |
TW479364B (en) * | 1999-04-28 | 2002-03-11 | Koninkl Philips Electronics Nv | Method of manufacturing a semiconductor device comprising a field effect transistor |
US6204159B1 (en) * | 1999-07-09 | 2001-03-20 | Advanced Micro Devices, Inc. | Method of forming select gate to improve reliability and performance for NAND type flash memory devices |
US6380031B1 (en) * | 1999-09-08 | 2002-04-30 | Texas Instruments Incorporated | Method to form an embedded flash memory circuit with reduced process steps |
US6329240B1 (en) | 1999-10-07 | 2001-12-11 | Monolithic System Technology, Inc. | Non-volatile memory cell and methods of fabricating and operating same |
US6841821B2 (en) * | 1999-10-07 | 2005-01-11 | Monolithic System Technology, Inc. | Non-volatile memory cell fabricated with slight modification to a conventional logic process and methods of operating same |
US6457108B1 (en) | 1999-10-07 | 2002-09-24 | Monolithic System Technology, Inc. | Method of operating a system-on-a-chip including entering a standby state in a non-volatile memory while operating the system-on-a-chip from a volatile memory |
US6287913B1 (en) | 1999-10-26 | 2001-09-11 | International Business Machines Corporation | Double polysilicon process for providing single chip high performance logic and compact embedded memory structure |
JP2003518742A (ja) * | 1999-12-21 | 2003-06-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 不揮発性のメモリーセルと周辺部 |
TW461093B (en) | 2000-07-07 | 2001-10-21 | United Microelectronics Corp | Fabrication method for a high voltage electrical erasable programmable read only memory device |
JP2002050705A (ja) * | 2000-08-01 | 2002-02-15 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
US7125763B1 (en) * | 2000-09-29 | 2006-10-24 | Spansion Llc | Silicided buried bitline process for a non-volatile memory cell |
US6518125B1 (en) * | 2000-11-17 | 2003-02-11 | Macronix International Co., Ltd. | Method for forming flash memory with high coupling ratio |
DE10101270A1 (de) * | 2001-01-12 | 2002-07-25 | Infineon Technologies Ag | Verfahren zur Herstellung von eingebetteten nichtflüchtigen Halbleiterspeicherzellen |
JP2003023114A (ja) * | 2001-07-05 | 2003-01-24 | Fujitsu Ltd | 半導体集積回路装置およびその製造方法 |
JP4672217B2 (ja) * | 2001-09-04 | 2011-04-20 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置の製造方法 |
US6518614B1 (en) * | 2002-02-19 | 2003-02-11 | International Business Machines Corporation | Embedded one-time programmable non-volatile memory using prompt shift device |
US6858514B2 (en) * | 2002-03-29 | 2005-02-22 | Sharp Laboratories Of America, Inc. | Low power flash memory cell and method |
WO2004001824A1 (en) * | 2002-06-20 | 2003-12-31 | Koninklijke Philips Electronics N.V. | Conductive spacers extended floating gates |
US6909139B2 (en) | 2003-06-27 | 2005-06-21 | Infineon Technologies Ag | One transistor flash memory cell |
US6933199B1 (en) | 2003-10-15 | 2005-08-23 | Microchip Technology Incorporated | Method for integrating non-volatile memory with high-voltage and low-voltage logic in a salicide process |
KR100546392B1 (ko) | 2003-11-01 | 2006-01-26 | 삼성전자주식회사 | Eprom 소자를 포함하는 반도체 소자와 그 제조 방법 |
JP4753413B2 (ja) * | 2005-03-02 | 2011-08-24 | 三洋電機株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
US20070170489A1 (en) * | 2006-01-26 | 2007-07-26 | Fang Gang-Feng | Method to increase charge retention of non-volatile memory manufactured in a single-gate logic process |
US7382658B2 (en) * | 2006-01-26 | 2008-06-03 | Mosys, Inc. | Non-volatile memory embedded in a conventional logic process and methods for operating same |
JP2006203225A (ja) * | 2006-02-22 | 2006-08-03 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
US20070196971A1 (en) * | 2006-02-22 | 2007-08-23 | Bohumil Lojek | Scalable embedded EEPROM memory cell |
US8629490B2 (en) * | 2006-03-31 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode |
CN101689532B (zh) | 2007-06-29 | 2013-06-12 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
US8247861B2 (en) | 2007-07-18 | 2012-08-21 | Infineon Technologies Ag | Semiconductor device and method of making same |
KR101922849B1 (ko) | 2009-11-20 | 2018-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
TWI490982B (zh) | 2011-08-16 | 2015-07-01 | Maxchip Electronics Corp | 半導體結構及其製造方法 |
EP2747131B1 (en) | 2012-12-18 | 2015-07-01 | Nxp B.V. | Method of processing a silicon wafer |
WO2016050927A1 (de) * | 2014-10-02 | 2016-04-07 | Elmos Semiconductor Aktiengesellschaft | Flash-speicherzelle und verfahren zu ihrer herstellung |
TWI737377B (zh) * | 2020-07-01 | 2021-08-21 | 力晶積成電子製造股份有限公司 | 半導體結構及其製作方法 |
Family Cites Families (8)
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US4646425A (en) * | 1984-12-10 | 1987-03-03 | Solid State Scientific, Inc. | Method for making a self-aligned CMOS EPROM wherein the EPROM floating gate and CMOS gates are made from one polysilicon layer |
US4635347A (en) * | 1985-03-29 | 1987-01-13 | Advanced Micro Devices, Inc. | Method of fabricating titanium silicide gate electrodes and interconnections |
IT1196997B (it) * | 1986-07-25 | 1988-11-25 | Sgs Microelettronica Spa | Processo per realizzare strutture includenti celle di memoria non volatili e2prom con strati di silicio autoallineate transistori associati |
US4775642A (en) * | 1987-02-02 | 1988-10-04 | Motorola, Inc. | Modified source/drain implants in a double-poly non-volatile memory process |
JP3168617B2 (ja) * | 1990-07-13 | 2001-05-21 | 株式会社日立製作所 | 不揮発性半導体記憶装置の製造方法 |
US5188976A (en) * | 1990-07-13 | 1993-02-23 | Hitachi, Ltd. | Manufacturing method of non-volatile semiconductor memory device |
JP3548984B2 (ja) * | 1991-11-14 | 2004-08-04 | 富士通株式会社 | 半導体装置の製造方法 |
DE69320582T2 (de) * | 1992-10-07 | 1999-04-01 | Koninklijke Philips Electronics N.V., Eindhoven | Verfahren zur Herstellung eines integrierten Schaltkreises mit einem nichtflüchtigen Speicherelement |
-
1997
- 1997-03-05 TW TW086102680A patent/TW347567B/zh not_active IP Right Cessation
- 1997-03-10 KR KR1019970708368A patent/KR100474631B1/ko not_active IP Right Cessation
- 1997-03-10 JP JP53417497A patent/JP4223551B2/ja not_active Expired - Fee Related
- 1997-03-10 CN CNB971905061A patent/CN1143397C/zh not_active Expired - Fee Related
- 1997-03-10 EP EP97903555A patent/EP0827634B1/en not_active Expired - Lifetime
- 1997-03-10 DE DE69707382T patent/DE69707382T2/de not_active Expired - Lifetime
- 1997-03-10 WO PCT/IB1997/000227 patent/WO1997036332A1/en active IP Right Grant
- 1997-03-11 US US08/814,868 patent/US5879990A/en not_active Expired - Lifetime
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7652321B2 (en) | 2004-03-08 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
CN1691337B (zh) * | 2004-03-08 | 2011-06-08 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
CN100343978C (zh) * | 2004-06-23 | 2007-10-17 | 上海先进半导体制造有限公司 | 制造双层多晶硅存储器元件的方法 |
CN1841754B (zh) * | 2005-03-12 | 2010-12-15 | 三星电子株式会社 | Nor型混合多位非易失性存储器件及其操作方法 |
CN101964328B (zh) * | 2009-07-24 | 2012-12-12 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
CN103579121A (zh) * | 2012-07-18 | 2014-02-12 | 钜晶电子股份有限公司 | 半导体结构的制造方法 |
CN103579121B (zh) * | 2012-07-18 | 2016-08-24 | 钜晶电子股份有限公司 | 半导体结构的制造方法 |
CN105789036A (zh) * | 2014-12-25 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和电子装置 |
CN105789036B (zh) * | 2014-12-25 | 2018-10-23 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和电子装置 |
CN106298674A (zh) * | 2015-05-25 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | 存储器及其形成方法 |
CN106298674B (zh) * | 2015-05-25 | 2019-07-02 | 中芯国际集成电路制造(上海)有限公司 | 存储器及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH11505675A (ja) | 1999-05-21 |
CN1143397C (zh) | 2004-03-24 |
TW347567B (en) | 1998-12-11 |
US5879990A (en) | 1999-03-09 |
KR100474631B1 (ko) | 2005-05-16 |
EP0827634B1 (en) | 2001-10-17 |
WO1997036332A1 (en) | 1997-10-02 |
EP0827634A1 (en) | 1998-03-11 |
DE69707382T2 (de) | 2002-06-27 |
DE69707382D1 (de) | 2001-11-22 |
JP4223551B2 (ja) | 2009-02-12 |
KR19990021893A (ko) | 1999-03-25 |
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