TWI236159B - White light emitting device - Google Patents
White light emitting device Download PDFInfo
- Publication number
- TWI236159B TWI236159B TW092127665A TW92127665A TWI236159B TW I236159 B TWI236159 B TW I236159B TW 092127665 A TW092127665 A TW 092127665A TW 92127665 A TW92127665 A TW 92127665A TW I236159 B TWI236159 B TW I236159B
- Authority
- TW
- Taiwan
- Prior art keywords
- light emitting
- emitting device
- cover member
- white light
- illuminance
- Prior art date
Links
- 239000000463 material Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000049 pigment Substances 0.000 claims description 7
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000975 dye Substances 0.000 claims description 4
- 229920001971 elastomer Polymers 0.000 claims description 4
- 239000000806 elastomer Substances 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 3
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 239000011347 resin Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000000805 composite resin Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 101100008047 Caenorhabditis elegans cut-3 gene Proteins 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 101700004678 SLIT3 Proteins 0.000 description 1
- 102100025490 Slit homolog 1 protein Human genes 0.000 description 1
- 101710123186 Slit homolog 1 protein Proteins 0.000 description 1
- 102100027340 Slit homolog 2 protein Human genes 0.000 description 1
- 101710133576 Slit homolog 2 protein Proteins 0.000 description 1
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000001054 red pigment Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002294326A JP4280050B2 (ja) | 2002-10-07 | 2002-10-07 | 白色発光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200414568A TW200414568A (en) | 2004-08-01 |
| TWI236159B true TWI236159B (en) | 2005-07-11 |
Family
ID=32025495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092127665A TWI236159B (en) | 2002-10-07 | 2003-10-06 | White light emitting device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7180240B2 (enExample) |
| EP (1) | EP1408559A3 (enExample) |
| JP (1) | JP4280050B2 (enExample) |
| KR (1) | KR100655252B1 (enExample) |
| CN (1) | CN1310345C (enExample) |
| TW (1) | TWI236159B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI476962B (zh) * | 2011-08-12 | 2015-03-11 | 夏普股份有限公司 | 發光裝置 |
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| TWI244226B (en) | 2004-11-05 | 2005-11-21 | Chen Jen Shian | Manufacturing method of flip-chip light-emitting device |
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| USD512029S1 (en) * | 2004-06-28 | 2005-11-29 | Samsung Electro-Mechanics Co., Ltd. | Light-emitting diode |
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| US7256057B2 (en) * | 2004-09-11 | 2007-08-14 | 3M Innovative Properties Company | Methods for producing phosphor based light sources |
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| KR101878270B1 (ko) * | 2011-09-15 | 2018-07-13 | 엘지이노텍 주식회사 | 광여기 판을 포함하는 조명 장치 및 광여기 테이프 |
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2002
- 2002-10-07 JP JP2002294326A patent/JP4280050B2/ja not_active Expired - Fee Related
-
2003
- 2003-10-03 EP EP03256244A patent/EP1408559A3/en not_active Withdrawn
- 2003-10-06 TW TW092127665A patent/TWI236159B/zh not_active IP Right Cessation
- 2003-10-07 KR KR1020030069507A patent/KR100655252B1/ko not_active Expired - Fee Related
- 2003-10-07 US US10/679,490 patent/US7180240B2/en not_active Expired - Lifetime
- 2003-10-08 CN CNB2003101015379A patent/CN1310345C/zh not_active Expired - Fee Related
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| TWI476962B (zh) * | 2011-08-12 | 2015-03-11 | 夏普股份有限公司 | 發光裝置 |
| US9537065B2 (en) | 2011-08-12 | 2017-01-03 | Sharp Kabushiki Kaisha | Light-emitting device with reflective resin |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1408559A2 (en) | 2004-04-14 |
| CN1497747A (zh) | 2004-05-19 |
| JP2004128424A (ja) | 2004-04-22 |
| KR100655252B1 (ko) | 2006-12-08 |
| CN1310345C (zh) | 2007-04-11 |
| JP4280050B2 (ja) | 2009-06-17 |
| TW200414568A (en) | 2004-08-01 |
| EP1408559A3 (en) | 2006-07-05 |
| US20040070338A1 (en) | 2004-04-15 |
| US7180240B2 (en) | 2007-02-20 |
| KR20040031661A (ko) | 2004-04-13 |
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