WO2005073621A1 - Led照明光源 - Google Patents
Led照明光源 Download PDFInfo
- Publication number
- WO2005073621A1 WO2005073621A1 PCT/JP2005/000654 JP2005000654W WO2005073621A1 WO 2005073621 A1 WO2005073621 A1 WO 2005073621A1 JP 2005000654 W JP2005000654 W JP 2005000654W WO 2005073621 A1 WO2005073621 A1 WO 2005073621A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light source
- led
- illumination light
- led illumination
- skeleton
- Prior art date
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/68—Details of reflectors forming part of the light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Definitions
- the present invention relates to an LED illumination light source, and particularly to an LED illumination light source that can be suitably used as a white light source for general illumination.
- a light-emitting diode element (hereinafter, referred to as an “LED element”) is a semiconductor element that is small, efficient, and emits bright colors, and has an excellent monochromatic peak.
- a red LED element, a green LED element, and a blue LED element may be arranged close to each other to perform diffusion color mixing.
- each LED element has an excellent monochromatic peak, there is a problem that color unevenness easily occurs. That is, if the light emission of each LED element becomes non-uniform and color mixing is not successful, white light emission with color unevenness occurs.
- Patent Documents 1 and 2 a technique for obtaining white light emission by combining a blue LED element and a yellow phosphor has been developed (for example, Patent Documents 1 and 2).
- white light emission is obtained by light emission from a blue LED element and light emission from a yellow phosphor that emits yellow when excited by the light emission.
- white light emission is obtained by using only one type of LED element, so that the problem of color unevenness that occurs when white light emission is obtained by bringing a plurality of types of LED elements close to each other can be solved.
- the shell-type LED illumination light source disclosed in Patent Document 2 has a configuration as shown in FIG. That is, the bullet-type LED illumination light source 200 shown in FIG. 1 includes an LED element 121, a bullet-shaped transparent container 127 covering the LED element 121, and lead frames 122a and 122b for supplying current to the LED element 121.
- the cup-shaped reflector 123 that reflects light emitted from the LED element 121 in the direction of arrow D is provided on the mount portion of the frame 122b on which the LED element 121 is mounted.
- the LED element 121 is sealed by a first resin part 124 in which a fluorescent substance 126 is dispersed, and the first resin part 124 is formed by a second resin part. Covered by part 125. When blue light is emitted from the LED element 121 and the fluorescent substance 126 emits yellow light due to the light, both colors are mixed and white is obtained.
- Patent Document 1 Japanese Patent Application Laid-Open No. 10-242513
- Patent Document 2 Japanese Patent No. 2998696
- Patent Document 3 JP 2003-124528 A
- Patent Document 3 discloses an LED illumination light source in which a plurality of LED bare chips are mounted on a heat dissipation board. The LED illumination light source is shown in Fig. 2 (a) and (b).
- a plurality of LED bare chips 202 are mounted on one side of a heat dissipation board 201.
- the optical reflector 203 is combined with the heat dissipation board 201 on which the LED bare chip 202 is mounted.
- an opening (hole) 203b corresponding to the LED bare chip 201 arranged on the heat radiation substrate 201 is formed in the optical reflection plate 203.
- the inner wall surface of the opening 203b functions as the reflection surface 203a.
- an LED illumination light source 250 shown in FIG. 2 (b) is formed.
- the resin 203 is filled in the opening 203b of the optical reflection plate 203, and the resin 204 functions as a lens.
- the LED illumination light source 250 a force in which the plurality of LED bare chips 202 are densely arranged on the radiating board 201 can efficiently radiate the heat generated from the plurality of LED bare chips 202. Therefore, in the LED illumination light source 250, a large current can flow through each LED chip 202, and a strong luminous flux can be obtained as a whole.
- the optical reflection plate 203 is made of metal (for example, aluminum) or resin.
- the heat radiation effect can be improved due to the high thermal conductivity of the metal.
- the inner wall surface of the opening 203b of the optical reflecting plate 203 can be given a mirror surface, the inner wall surface of each opening formed in the metal plate can be used as it is as the reflecting surface 203a.
- the processing cost for forming the opening 203b with high precision is high, so that the price of the optical reflection plate 203 increases.
- the optical reflection plate 203 is manufactured from a cheaper resin than from the metal. This is because resin optical reflectors can be mass-produced inexpensively using molds.
- the heat radiation substrate 201 may be warped.
- resin 204 is filled in opening 203b of optical reflection plate 203, and in some cases, the entire upper surface of optical reflection plate 203 is covered with resin 204. Since the resin 204 is produced by a molding method such as an injection mold similarly to the optical reflection plate 203 made of a resin, the resin 204 contracts upon curing. When such resin shrinkage occurs on the substrate upper surface side, the optical reflection plate 203 shrinks in the direction parallel to the upper surface of the heat radiation substrate 201 as a whole, and the heat radiation substrate 201 is largely warped. Such a warp is remarkable when the heat dissipation board 201 is thin.
- the present invention has been made in view of the above circumstances, and a main object of the present invention is to provide an LED illumination light source which is inexpensive and can effectively suppress warpage.
- An LED illumination light source includes a substrate having an upper surface, and an LED light source arranged on the upper surface of the substrate.
- the skeleton is formed of at least one material of a metal, a ceramic, a semiconductor, and a glass.
- the reflection member has a plurality of openings arranged two-dimensionally, and the inner wall surface force of each opening surrounds the side surface of each LED element. I have.
- inner wall surfaces of the plurality of openings in the reflection member function as the reflection surface.
- a translucent member that covers the plurality of LED elements is provided on an upper surface side of the substrate.
- the translucent member is formed of a resin, and a resin layer is provided on a lower surface of the substrate.
- the translucent member has a portion functioning as a lens array, and each lens included in the lens array includes one of the plurality of LED elements. Exhibits a lens effect on the light emitted from the corresponding LED element.
- the translucent member covers at least the reflection surface of the reflection member.
- the apparatus further includes a wavelength conversion unit that covers each of the plurality of LED elements, and the wavelength conversion unit converts the light emitted from the LED element into the light. It converts to light having a longer wavelength than the wavelength.
- the resin of the reflection member covers 70% or more of the surface of the skeleton.
- the substrate is a composite substrate made of a material containing resin and an inorganic filler.
- the skeleton is located outside a plurality of LED element clusters arranged on the substrate.
- the LED elements are arranged on an upper surface of the substrate.
- the skeleton has at least two rods extending along at least one of a row direction and a column direction in the matrix.
- the skeleton has a member extending in the row direction and the column direction between each row and each column in the matrix.
- the LED elements are arranged in a matrix on the upper surface of the substrate, and the skeleton is different from a row direction and a column direction in the matrix.
- the skeleton is a plate-like member arranged in parallel with the substrate, and the plate-like member has an opening formed at a position corresponding to the LED element. It has been.
- the skeleton is a metal member having the reflection surface.
- the resin of the reflection member exists in a layer on the metal member.
- a reflector for an LED illumination light source includes a resin and a skeleton formed of a material having greater bending rigidity than the resin.
- the skeleton is formed of at least one material of a metal, a ceramic, a semiconductor, and a glass.
- a plurality of openings are two-dimensionally arranged, and the inner wall surface of each opening serves as a reflection surface that reflects light emitted from the LED element.
- the inner wall surface of the opening is formed by at least a part of the surface of the resin layer.
- the lower surface is formed by at least a part of the surface of the resin layer.
- the reflecting member is provided with the skeleton in which a material having greater bending rigidity than resin is also formed, the reflection is higher than when only the resin is formed.
- the rigidity of the member is effectively increased. For this reason, LED lighting sources can be manufactured at low cost. And the warpage can be suppressed.
- FIG. 1 is a cross-sectional view schematically showing a configuration of a conventional shell-type LED illumination light source.
- FIG. 2 (a) and (b) are perspective views schematically showing a configuration of a conventional LED illumination light source. [FIG.
- FIG. 3 is a cross-sectional view schematically showing a configuration of an LED illumination light source 100 according to an embodiment of the present invention.
- FIG. 4 is a plan view schematically showing a plane of the LED illumination light source 100 according to the embodiment of the present invention.
- FIG. 5 is a cross-sectional view schematically showing a configuration of an LED illumination light source 100 according to an embodiment of the present invention.
- FIG. 6 is a plan view schematically showing a plane of the LED illumination light source 100 according to the embodiment of the present invention.
- FIG. 7 is an enlarged cross-sectional view schematically showing a configuration of a peripheral portion of an LED element 10.
- FIG. 8 is a perspective view schematically showing a configuration of a card-type LED illumination light source 100 according to an embodiment of the present invention.
- FIG. 9 is a plan view showing an example of a skeleton 40.
- FIG. 10 is a plan view showing another example of the skeleton 40.
- FIG. 11 is a plan view showing still another example of the skeleton 40.
- FIG. 12 is a perspective view showing still another example of the skeleton 40.
- FIG. 13 is a perspective view showing still another example of the skeleton 40.
- FIG. 14 is a perspective view showing still another example of the skeleton 40.
- FIG. 3 schematically shows a cross-sectional configuration of the LED illumination light source 100
- FIG. 2 schematically shows a planar configuration of the ED illumination light source 100.
- the LED illumination light source 100 includes a substrate 20, and the LED elements 1 arranged two-dimensionally on the substrate 20.
- a reflecting plate 30 having a reflecting surface 32 for reflecting the light emitted from the LED element 10.
- the reflecting plate 30 is composed of a plate-shaped resin layer including a skeleton 40 therein.
- This resin layer is provided with a plurality of openings, and each opening is formed so as to surround the corresponding side surface of the LED element 10.
- the skeleton 40 is formed of a material having a bending strength larger than the bending strength of the resin layer of the reflection plate 30, and suppresses occurrence of warpage of the substrate 20.
- the skeleton 40 is also preferably formed with at least one material strength of metal, ceramic, semiconductor, and glass.
- the resin of the reflection plate 30 is, for example, liquid crystal polymer (LCP), polyphthalamide (PPA), or the like.
- LCP liquid crystal polymer
- PPA polyphthalamide
- the flexural strength of these resin materials is relatively high, typically above 120 MPa.
- the More specifically, the bending strength of the liquid crystal polymer is about 150 to 250 MPa, and the bending strength of polyphthalamide is about 120 to 370 MPa.
- the bending strength of a metal (for example, aluminum) suitably used as the material of the skeleton 40 is about 400 to 500 MPa, and the bending strength of the ceramic is about 800 to 100 MPa.
- the skeleton 40 of the reflector 30 is formed by aluminum force.
- the skeleton 40 may be formed of copper, stainless steel, iron, or an alloy thereof instead of aluminum.
- a ceramic force for example, alumina (Al 2 O 3),
- iO iO
- PSZ zircon
- a group (cluster) of LED elements is composed of nine LED elements 10 arranged in a matrix of 3 rows ⁇ 3 columns.
- the reflector 30 provided with nine openings 35 surrounding the corresponding LED elements 10 covers the upper surface of the substrate 20.
- the skeleton 40 has a configuration surrounding the outside of the LED element cluster. More specifically, the skeleton 40 has a rectangular shape, and is located on the outer peripheral portion (a region near the peripheral edge) of the substrate 20 in a state of being buried in the resin layer.
- the thickness of the resin layer is, for example, 500 m or more and 10 mm or less.
- the thickness of the skeleton 40 is smaller than the thickness of the resin layer, for example, 100 m or more and 5 mm or less. In the examples shown in FIGS. 3 and 4, the thickness of the resin layer is lmm, and the thickness of the skeleton 40 is about 200 ⁇ m.
- the skeleton 40 is arranged about 200 to 300 / zm above the bottom surface of the resin layer. In other words, a gap having a thickness of about 200 to 300 m exists between the skeleton 40 and the substrate 20, and the gap is partially filled with the resin layer.
- the side surface (inner wall surface) of each opening 35 provided in the resin layer functions as a reflection surface 32 that reflects light emitted from the LED element 10.
- the reflectivity of the reflection surface 32 is preferably 70% or more.
- the reflection surface 32 may be formed of resin or a metal film (reflection film) deposited on the reflection surface 32.
- a reflective film is formed of, for example, Ni, Al, Pt, Ag, Al, or the like, the reflectance of the reflective surface 32 can be improved.
- the reflecting surface 32 is formed of, for example, a film of titanium oxide, the reflecting surface 32 can be made white.
- each opening 35 varies depending on the size of the LED element 10. Then, it is about 2100-2500 / zm.
- the LED element 10 of the present embodiment includes an LED bare chip 12 and a phosphor resin portion 14 that covers the LED bare chip 12.
- the phosphor resin portion 14 is formed of a phosphor (fluorescent material) that converts light emitted from the LED bare chip 12 into light having a wavelength longer than the wavelength of the light, and a resin that disperses the phosphor. ing.
- the LED bare chip 12 is mounted on the upper surface of the substrate 20.
- a wiring pattern (not shown) is formed on the upper surface of the substrate 20, and in this embodiment, an LED bare chip 12 is mounted on a part (for example, a land) of the wiring pattern by a lip chip.
- the LED bare chip 12 used in the present embodiment is an LED that emits light having a peak wavelength within a visible range of a wavelength of 380 nm to 780 nm.
- the phosphor dispersed in the phosphor resin portion 14 is a phosphor that emits light having a peak wavelength different from the peak wavelength of the LED bare chip 12 within a visible range of a wavelength of 380 nm to 780 nm. is there.
- the LED bare chip 12 is preferably a blue LED that emits blue light.
- the phosphor contained in the phosphor resin portion 14 is a yellow phosphor that converts into yellow light. Blue light and yellow light mix to form white light.
- the reflection surface 32 may be a diffusion surface in order to form white light with less unevenness by sufficiently mixing the two lights. In order to make the reflection surface 32 a diffusion surface, for example, titanium oxide may be mixed into a resinous fabric.
- the LED bare chip 12 in a preferred embodiment is an LED chip made of a gallium nitride (GaN) -based material, and emits light having a wavelength of, for example, 460 nm.
- GaN gallium nitride
- LED chip that emits blue light is used as the LED bare chip 12, (Y'Sm) (Al-Ga) O:
- the phosphor resin portion 14 is formed in a substantially columnar shape, and when the dimensional force of the LED bare chip 12 is, for example, about 0.3 mm ⁇ about 0.3 mm, the diameter of the phosphor resin section 14 is, for example, about 0 mm. 7mm—about 0.9mm. It is also possible to make the horizontal cross section of the phosphor resin portion 14 a rectangular shape or the like.
- the arrangement of the LED elements 10 formed on one substrate 20 may be a matrix of M rows and XN columns (M is an integer of 2 or more and N is an integer of 2 or more). Also, the arrangement of the LED elements 10 may be a substantially concentric arrangement that does not need to be arranged in a row, or a spiral arrangement.
- the substrate 20 is preferably a heat dissipation substrate.
- a composite substrate having a material strength including a resin and an inorganic filler is used. More specifically, a metal-based composite substrate (eg, an alumina composite substrate) is used.
- a heat radiation substrate having a high thermal conductivity for example, 1.2 ° CZW or more
- a strong current can flow through each LED bare chip. Therefore, a large luminous flux can be obtained.
- the thickness of the substrate 20 is, for example, 0.1 mm or more and 5 mm or less, and typically 2 mm or less.
- a thin substrate 20 for example, a thickness of lmm
- the skeleton 40 is provided therein, the warpage can be suppressed and alleviated.
- the area of the upper surface of the substrate 20 is preferably 6.25 mm 2 or more. In order to increase the luminous flux by mounting a large number of LED elements 10, it is more preferable that the area of the upper surface of the substrate 20 is 56.25 mm 2 or more.
- the entire metal skeleton 40 is covered with the resin of the reflection plate 30.
- the metal skeleton 40 can be insulated from the wiring on the substrate 20 and the like, and the skeleton 40 can be prevented from being oxidized. Note that there is no particular problem if a part of the skeleton 40 is exposed from the resin, but it is preferable that the resin covers 70% or more of the surface of the skeleton 40.
- the skeleton 40 is disposed in the lower half of the resin layer of the reflector 30, but the skeleton 40 is located in the upper half or the center of the resin layer of the reflector 30. May be.
- the skeleton 40 may be located at the bottom of the resin layer and may be in contact with the substrate 20.
- the skeleton 40 is also formed of a material having conductivity, in order to maintain the insulation between the wiring pattern of the substrate 20 and the skeleton 40, at least a part of the surface of the wiring pattern is made of an insulating material (for example, resin). ).
- the inside of the opening 35 of the reflection plate 30 shown in Fig. 3 can be filled with a light-transmitting member such as resin.
- each opening 35 can be filled with a resin lens 50.
- FIG. 5 is a cross-sectional view similar to FIG. 3, and
- FIG. 6 is a plan view clearly illustrating a skeleton 40 embedded in the reflector 30 for easy understanding.
- the light distribution from the LED element 10 can be controlled by the array of resin lenses 50, The scientific characteristics can be improved.
- the skeleton 40 is provided inside the reflection plate 30, even if the degree of the warp is increased by forming the resin lens 50, the warp can be prevented. it can.
- a resin lens 50 is formed on the upper surface side of the substrate 20 and no resin layer is formed on the lower surface side of the substrate 20, warpage of the substrate 20 is particularly remarkable due to resin shrinkage occurring on one side. More likely to occur.
- a resin layer may be intentionally formed on the lower surface of the substrate 20.
- the lower surface of the substrate 20 is Not covered by layers.
- the shrinkage of the resin occurs only on the upper surface side of the substrate 20, but the presence of the skeleton 40 included in the reflection plate 30 greatly suppresses the warpage of the substrate 20.
- the lens 50 can be manufactured by filling the inside of the opening 35 with a resin so as to seal the individual LED elements 10, and molding the resin.
- a thin resin layer extending laterally from the lens 50 also exists on the upper surface of the reflector 30.
- the resin constituting the lens 50 is, for example, an epoxy resin.
- the material of the lens 50 is not limited to resin and may be formed of glass.
- FIG. 7 is a cross-sectional view showing the periphery of one LED element 10 in the LED illumination light source 100.
- the substrate 20 shown in FIG. 7 includes a base substrate 22, and a wiring layer 24 formed on the base substrate 22.
- the base substrate 22 is, for example, a metal substrate
- the wiring layer 24 includes a wiring pattern 26 formed on a composite layer made of an inorganic filler and a resin.
- the reason why the metal substrate is used for the base substrate 22 and the composite layer is used for the wiring layer 24 is to improve the heat dissipation from the LED chip 12.
- the wiring layer 24 is a part of the multilayer wiring board, and the uppermost wiring pattern 26 is free from the LED chip 12. Chip mounted.
- the reflection plate 30 is made of resin, the electrical insulation of the wiring pattern 26 can be better ensured as compared with a metal reflection plate.
- the side surface of the phosphor resin portion 14 and the reflection surface 32 of the reflection plate 30 are separated.
- the shape of the phosphor resin portion 14 is not restricted by the shape of the reflecting surface 32 of the reflector 30. Can be designed freely. Since the shape of the phosphor resin portion 14 affects the color unevenness, the color unevenness can be reduced by optimizing the shape independently of the shape of the reflection surface 32.
- the phosphor resin portion 14 of the present embodiment has a “substantially columnar shape”. Is not limited to a structure having a perfect circle, but includes a structure whose cross section is a polygon having six or more vertices. If the polygon has six or more vertices, it can be identified as a "cylinder" because it has practically axial symmetry.
- the LED chip 12 When mounting the LED chip 12 on the substrate 20 by ultrasonic flip chip mounting, the LED chip 12 may rotate in a plane parallel to the upper surface of the substrate due to ultrasonic vibration.
- the phosphor resin portion 14 has a triangular prism or a quadrangular prism shape, the light distribution characteristics are easily affected by the positional relationship between the LED chip 12 and the phosphor resin portion 14.
- the fluorescent resin portion 14 has a substantially columnar shape, even if the LED chip 12 rotates in a plane parallel to the upper surface of the substrate, the mutual arrangement of the fluorescent resin portion 14 and the LED chip 12 is possible. There is no significant change in the relationship, and the alignment characteristics are not easily affected.
- FIG. 8 shows an example of a card-type LED illumination light source 100 including a plurality of two-dimensionally arranged LED chips (LED groups or LED clusters).
- a plurality of lenses 50 are provided on the surface, and a skeleton (not shown) is formed inside the resin reflection plate 30.
- This skeleton has the same configuration as the skeleton 40 shown in FIG. [0068]
- a power supply terminal 28 that is electrically connected to a wiring pattern on the substrate 20 and supplies power to the LED chip is provided on a part of the surface of the card-type LED illumination light source 100.
- a connector into which the LED illumination light source 100 can be detachably inserted and a lighting circuit (not shown) are electrically connected, and a guard type LED illumination is connected to the connector. You can insert the light source 100 and use it.
- the card-type LED illumination light source 100 is often required to be thinner, depending on the standard and system employed. If the power LED type light source equipped with the resin reflector 30 (and the resin lens 50) is made thinner, the problem of warpage is more likely to occur. According to this, since the skeleton 40 is formed on the resin-made reflecting plate 30, it is possible to prevent the warp from being generated even with the power-type LED illumination light source.
- the pattern of the force skeleton 40 in which the skeleton 40 is arranged in the peripheral region of the substrate 20 is not limited thereto, and another pattern may be adopted.
- FIG. 9 shows an LED illumination light source provided with a skeleton 40 having a cross shape.
- the skeleton 40 shown in FIG. 9 includes a first rod-shaped member 40a extending in the row direction along the upper surface of the substrate 20, and a second rod-shaped member 40b extending in the column direction.
- the first rod-shaped member 40a and the second rod-shaped member 40b may be formed integrally or may be formed by combining different members. Further, the height (level) of the first rod-shaped member 40a with respect to the upper surface of the substrate 20 and the height (level) of the second rod-shaped member 40b with respect to the upper surface of the substrate 20 may be different, and both may intersect.
- two intersecting rod-shaped members 40a and 40b are connected to each other.
- Such a connection may be made by a projecting object that also increases at least one force of the rod-shaped members 40a and 40b, or may be made through another fixing member.
- a notch or a through hole is provided in at least one of the bar members 40a and 40b, and the inside of the notch or the through hole is formed in a bar shape. The other of the members 40a and 40b may pass through.
- the skeleton 40 shown in FIG. 10 has a lattice shape formed by the plurality of first rod-shaped members 40a and the plurality of second rod-shaped members 4 Ob.
- the force in which the two first rod-shaped members 4 Oa and the two second rod-shaped members 40b intersect corresponds to the arrangement of the LED elements 10, and more rod-shaped members 40a and 40b intersect.
- a configuration may be adopted.
- the skeleton 40 shown in FIG. 11 has a configuration in which the configuration in FIG. 6 and the configuration in FIG. 10 are combined. That is, the skeleton 40 is formed by the members 40a and 40b forming the lattice shape and the 40c surrounding the outside of the LED element cluster.
- the skeleton 40 shown in FIG. 12 includes at least two rod-shaped members 40a extending in one of the row direction and the column direction.
- the two rod-shaped members 40a do not intersect and extend substantially in parallel.
- Such a skeleton 40 can also prevent the occurrence of warpage.
- the effect of suppressing the warpage in a direction (eg, a column direction) different from the long axis direction (eg, a row direction) of the rod-shaped members 40a is insufficient.
- the plane shape of the reflector 30 is long in one direction, if the long axis direction of the rod-shaped member 40a and the long axis direction of the reflector 30 are matched, the warpage is also effected by one rod-shaped member 40a. Can be suppressed.
- the skeleton 40 may be configured by arranging the bar-shaped members 40d and 40e obliquely with respect to the four sides of the substrate or the direction of the rows formed by the LED element clusters. good.
- the skeleton 40 may be formed by integrally forming the rod-shaped member 40d and the rod-shaped member 40e, or the skeleton 40 may be formed by combining a plurality of separately produced rod-shaped members 40d and 40e.
- the "bar-shaped member" in the present specification includes a wire. Therefore, a mesh formed by knitting (weaving) a metal wire may be used as the skeleton 40.
- the skeleton 40 of Fig. 14 is composed of a plate-like member 40f having an opening 42 formed therein. Each opening 42 is provided at a position corresponding to the LED element 10, and an opening 35 of the reflection plate 30 is formed so as to penetrate the opening 42.
- the skeleton 40 in Fig. 14 is suitable for mass production because the plate-like member 40f can be manufactured by pressurizing or the like.
- the plate-like member 40f has a shape with a high bending stress, and is excellent in the effect of preventing warpage.
- the reflecting surface 32 of the reflecting plate 30 may be formed of resin, or may be formed by the side surface (inner wall surface) of the opening 42 of the plate member 40f!
- the skeleton 40 is covered with the resin of the reflector 30, but a part of the skeleton 40 constitutes the reflector 30. You may be exposed from. Even if a part of the skeleton 40 is exposed from the reflection plate 30, the effect of suppressing the warp may not be affected.
- the reflector 30 is manufactured by a resin molding method, it is somewhat difficult to bury the entire skeleton 40 in the resin. In order for the entire skeleton 40 to be buried inside the resin, it is necessary to separate the skeleton 40 from the inner wall surface of the molding die. Actually, it is necessary to support the skeleton 40 in a floating state. It is.
- a protrusion or a bent portion is provided on a part (for example, both ends) of the skeleton 40, and the resin is hardened while supporting the skeleton 40 by the protrusion or the like. In such a case, there is a possibility that a part of the projecting portion of the skeleton 40 or the like is exposed on the surface of the resin.
- a conventional metal reflector as the skeleton 40.
- a resin layer is formed on the metal reflector functioning as the skeleton 40. That is, first, a metal reflector serving as the skeleton 40 is prepared, and a resin layer is formed on the surface of the metal reflector to produce the reflector 30.
- the resin layer is preferably produced by a resin molding method using a mold.
- the molded resin layer has an opening that penetrates an opening provided in the metal reflection plate.
- the reflecting surface 32 of the reflecting plate 30 is formed by the inner wall surface of the opening provided in the resin layer.
- the metal reflector used here can be manufactured inexpensively, as compared with a conventional metal reflector, even if the processing accuracy of the opening is low.
- a conventional metal reflector as it is as it is, it is necessary to make the inner wall of the opening provided in the metal reflector function as a reflection surface. Had increased significantly.
- the reflection plate 30 produced by the above method the surface of the metal reflection plate functioning as a skeleton is covered with resin! Therefore, it becomes easy to secure the electrical insulation of the wiring pattern formed on the substrate 20.
- the white LED illumination light source 100 includes the LED element 10 having the blue LED bare chip 12 and the yellow phosphor 14, but the white LED illumination light source includes other LED elements. May be provided.
- an LED element having an ultraviolet LED bare chip that emits ultraviolet light and a phosphor that emits red (R), green (G), and blue (B) light when excited by light from the ultraviolet LED bare chip is used.
- the UV LED bare chip emits light between 380 nm and 400 nm
- the phosphors emitting red (R), green (G) and blue (B) emit visible light with wavelengths between 380 nm and 780 nm. It has peak wavelengths within the range (ie, peak wavelengths of 450 nm, 540 nm, and 610 nm).
- the white LED element 10 includes the LED bare chip 12, but the LED element in the present invention may be a shell-type LED element, for example, a surface-mounted LED element. You may.
- one phosphor resin portion 14 covers one LED bare chip 12, but one phosphor resin portion 14 covers two or more LED bare chips 12.
- one phosphor resin portion 14 may have a first LED bare chip 12 and a second LED bare chip 12.
- the first and second LED bare chips 12 may be LED bare chips that emit light in the same wavelength region, or may be LED bare chips that emit light in different wavelength regions.
- the first LED bare chip 12 may be a blue LED
- the second LED bare chip 12 may be a red LED.
- LED element 10 need not be a white LED element.
- a monochromatic LED element such as a red LED element, a green LED element, and a blue LED element may be used. Irrespective of how many colors the LED element emits, the effect of warpage due to the resin can be suppressed by the skeleton in the reflector.
- the LED illumination light source of the present invention can be suitably used as various types of illumination devices because it is thin and hardly warps and is manufactured at low cost.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005517420A JP3895362B2 (ja) | 2004-01-29 | 2005-01-20 | Led照明光源 |
US11/402,928 US20060186425A1 (en) | 2004-01-29 | 2006-04-13 | LED lamp |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-021062 | 2004-01-29 | ||
JP2004021062 | 2004-01-29 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/402,928 Continuation-In-Part US20060186425A1 (en) | 2004-01-29 | 2006-04-13 | LED lamp |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005073621A1 true WO2005073621A1 (ja) | 2005-08-11 |
Family
ID=34823776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/000654 WO2005073621A1 (ja) | 2004-01-29 | 2005-01-20 | Led照明光源 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20060186425A1 (ja) |
JP (1) | JP3895362B2 (ja) |
CN (1) | CN1860329A (ja) |
WO (1) | WO2005073621A1 (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007064001A1 (en) * | 2005-11-29 | 2007-06-07 | Showa Denko K.K. | Reflector frame, flat light source device provided with the reflector frame, and display device using the flat light source device |
JP2007180524A (ja) * | 2005-11-29 | 2007-07-12 | Showa Denko Kk | リフレクター枠体およびリフレクター枠体を備えた面光源装置、ならびに、その面光源装置を用いた表示装置 |
JP2008252148A (ja) * | 2008-07-22 | 2008-10-16 | Nichia Corp | 発光装置用のパッケージ及びその製造方法 |
WO2008146544A1 (ja) * | 2007-05-25 | 2008-12-04 | Showa Denko K.K. | 発光装置、表示装置 |
JP2008294309A (ja) * | 2007-05-25 | 2008-12-04 | Showa Denko Kk | 発光装置、表示装置 |
JP2009071254A (ja) * | 2007-08-23 | 2009-04-02 | Panasonic Electric Works Co Ltd | 発光装置 |
JP2009534792A (ja) * | 2006-04-21 | 2009-09-24 | クリー インコーポレイテッド | 全般照明用の固体照明器具 |
WO2010100786A1 (ja) * | 2009-03-02 | 2010-09-10 | シャープ株式会社 | 光源装置および液晶表示装置 |
WO2011040493A1 (ja) * | 2009-10-01 | 2011-04-07 | 株式会社オプトデザイン | 照明光の色補正方法、この色補正方法を採用した光源モジュール及び照明装置 |
JP2014022501A (ja) * | 2012-07-17 | 2014-02-03 | Nitto Denko Corp | 発光装置集合体および照明装置 |
JP2016533641A (ja) * | 2013-10-16 | 2016-10-27 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス部品及びその製造方法 |
US9593823B2 (en) | 2011-07-18 | 2017-03-14 | Heraeus Noblelight Gmbh | Optoelectronic module with improved optical system |
JP7408712B2 (ja) | 2016-09-23 | 2024-01-05 | アップル インコーポレイテッド | ユーザインタフェース構造 |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8999736B2 (en) * | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic system |
JP4434840B2 (ja) * | 2004-05-31 | 2010-03-17 | キヤノン株式会社 | 照明装置および撮影装置 |
US7329907B2 (en) * | 2005-08-12 | 2008-02-12 | Avago Technologies, Ecbu Ip Pte Ltd | Phosphor-converted LED devices having improved light distribution uniformity |
JP2008060344A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体発光装置 |
JPWO2008041771A1 (ja) * | 2006-10-05 | 2010-02-04 | 旭硝子株式会社 | ガラス被覆発光素子、発光素子付き配線基板、発光素子付き配線基板の製造方法、照明装置およびプロジェクタ装置 |
KR20090083450A (ko) * | 2006-11-06 | 2009-08-03 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 자체 지지 파장 변환 소자 제조 방법 및 발광 장치 제조 방법 |
US7889421B2 (en) * | 2006-11-17 | 2011-02-15 | Rensselaer Polytechnic Institute | High-power white LEDs and manufacturing method thereof |
US8106414B2 (en) * | 2006-11-21 | 2012-01-31 | Nichia Corporation | Semiconductor light emitting device |
JP2008187030A (ja) * | 2007-01-30 | 2008-08-14 | Stanley Electric Co Ltd | 発光装置 |
US8456392B2 (en) * | 2007-05-31 | 2013-06-04 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
TWM327548U (en) * | 2007-08-15 | 2008-02-21 | Everlight Electronics Co Ltd | Light emitting semiconductor device |
CN101373049A (zh) * | 2007-08-24 | 2009-02-25 | 富士迈半导体精密工业(上海)有限公司 | 发光二极管照明装置 |
CN101424384B (zh) * | 2007-10-31 | 2011-05-04 | 富士迈半导体精密工业(上海)有限公司 | 光罩及采用该光罩的照明装置 |
JP4968014B2 (ja) * | 2007-11-22 | 2012-07-04 | ソニー株式会社 | バックライト装置及び液晶表示装置 |
DE102008014121A1 (de) * | 2007-12-20 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips und Halbleiterchip |
US8076833B2 (en) * | 2008-06-30 | 2011-12-13 | Bridgelux, Inc. | Methods and apparatuses for enhancing heat dissipation from a light emitting device |
TWI397655B (zh) * | 2008-07-11 | 2013-06-01 | Foxconn Tech Co Ltd | 發光二極體燈具 |
TWI462350B (zh) * | 2008-12-24 | 2014-11-21 | Ind Tech Res Inst | 多晶發光二極體 |
JP2011023345A (ja) * | 2009-06-19 | 2011-02-03 | Toshiba Lighting & Technology Corp | 光源ユニット及び照明装置 |
CN102734668A (zh) * | 2009-10-16 | 2012-10-17 | 富士迈半导体精密工业(上海)有限公司 | 发光模组 |
CN102042519B (zh) * | 2009-10-16 | 2012-10-17 | 富士迈半导体精密工业(上海)有限公司 | 发光模组 |
JP5886584B2 (ja) | 2010-11-05 | 2016-03-16 | ローム株式会社 | 半導体発光装置 |
JP2012109475A (ja) * | 2010-11-19 | 2012-06-07 | Rohm Co Ltd | 発光装置、発光装置の製造方法、および光学装置 |
US8373183B2 (en) | 2011-02-22 | 2013-02-12 | Hong Kong Applied Science and Technology Research Institute Company Limited | LED package for uniform color emission |
TWM419233U (en) * | 2011-08-05 | 2011-12-21 | Evergreen Optronics Inc | Light source apparatus |
TWI508332B (zh) * | 2011-11-09 | 2015-11-11 | Au Optronics Corp | 發光光源及其顯示面板 |
US8896010B2 (en) | 2012-01-24 | 2014-11-25 | Cooledge Lighting Inc. | Wafer-level flip chip device packages and related methods |
WO2013112435A1 (en) | 2012-01-24 | 2013-08-01 | Cooledge Lighting Inc. | Light - emitting devices having discrete phosphor chips and fabrication methods |
US8907362B2 (en) | 2012-01-24 | 2014-12-09 | Cooledge Lighting Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
US9698322B2 (en) | 2012-02-07 | 2017-07-04 | Cree, Inc. | Lighting device and method of making lighting device |
CN103791441A (zh) * | 2012-10-30 | 2014-05-14 | 欧司朗股份有限公司 | 透镜模块和包括该透镜模块的发光装置 |
KR20150025231A (ko) * | 2013-08-28 | 2015-03-10 | 서울반도체 주식회사 | 광원 모듈 및 그 제조 방법, 및 백라이트 유닛 |
US9343443B2 (en) | 2014-02-05 | 2016-05-17 | Cooledge Lighting, Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
RU2623506C2 (ru) * | 2015-08-20 | 2017-06-27 | Наталья Олеговна Стёркина | Способ создания светового потока и карнизный протяжённый светильник для его осуществления |
JP6555242B2 (ja) * | 2016-12-16 | 2019-08-07 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
US10566508B2 (en) * | 2018-05-18 | 2020-02-18 | Sct Ltd. | Molded surface mount device LED display module |
US10810932B2 (en) * | 2018-10-02 | 2020-10-20 | Sct Ltd. | Molded LED display module and method of making thererof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57168111U (ja) * | 1981-04-17 | 1982-10-22 | ||
JPH07202268A (ja) * | 1993-12-28 | 1995-08-04 | Copal Co Ltd | 発光装置 |
JPH10144108A (ja) * | 1996-11-05 | 1998-05-29 | Shizuoka Keisozai Kk | 車両の前照灯装置 |
JP2003124528A (ja) * | 2001-08-09 | 2003-04-25 | Matsushita Electric Ind Co Ltd | Led照明装置およびカード型led照明光源 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
JP3572924B2 (ja) * | 1997-03-06 | 2004-10-06 | 松下電器産業株式会社 | 発光装置及びそれを用いた記録装置 |
TWI242398B (en) * | 2000-06-14 | 2005-10-21 | Matsushita Electric Ind Co Ltd | Printed circuit board and method of manufacturing the same |
US6614103B1 (en) * | 2000-09-01 | 2003-09-02 | General Electric Company | Plastic packaging of LED arrays |
JP3844196B2 (ja) * | 2001-06-12 | 2006-11-08 | シチズン電子株式会社 | 発光ダイオードの製造方法 |
TW567619B (en) * | 2001-08-09 | 2003-12-21 | Matsushita Electric Ind Co Ltd | LED lighting apparatus and card-type LED light source |
US6737681B2 (en) * | 2001-08-22 | 2004-05-18 | Nichia Corporation | Light emitting device with fluorescent member excited by semiconductor light emitting element |
JP4280050B2 (ja) * | 2002-10-07 | 2009-06-17 | シチズン電子株式会社 | 白色発光装置 |
TW200414572A (en) * | 2002-11-07 | 2004-08-01 | Matsushita Electric Ind Co Ltd | LED lamp |
CN100352069C (zh) * | 2002-11-25 | 2007-11-28 | 松下电器产业株式会社 | Led照明光源 |
US6922024B2 (en) * | 2002-11-25 | 2005-07-26 | Matsushita Electric Industrial Co., Ltd. | LED lamp |
JP3977774B2 (ja) * | 2003-06-03 | 2007-09-19 | ローム株式会社 | 光半導体装置 |
CN100391020C (zh) * | 2004-02-26 | 2008-05-28 | 松下电器产业株式会社 | Led光源 |
-
2005
- 2005-01-20 WO PCT/JP2005/000654 patent/WO2005073621A1/ja active Application Filing
- 2005-01-20 CN CNA2005800010801A patent/CN1860329A/zh active Pending
- 2005-01-20 JP JP2005517420A patent/JP3895362B2/ja not_active Expired - Fee Related
-
2006
- 2006-04-13 US US11/402,928 patent/US20060186425A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57168111U (ja) * | 1981-04-17 | 1982-10-22 | ||
JPH07202268A (ja) * | 1993-12-28 | 1995-08-04 | Copal Co Ltd | 発光装置 |
JPH10144108A (ja) * | 1996-11-05 | 1998-05-29 | Shizuoka Keisozai Kk | 車両の前照灯装置 |
JP2003124528A (ja) * | 2001-08-09 | 2003-04-25 | Matsushita Electric Ind Co Ltd | Led照明装置およびカード型led照明光源 |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100987545B1 (ko) | 2005-11-29 | 2010-10-12 | 쇼와 덴코 가부시키가이샤 | 리플렉터 프레임, 이 리플렉터 프레임을 구비한 면 광원장치 및 이 면 광원 장치를 사용하는 표시 장치 |
JP2007180524A (ja) * | 2005-11-29 | 2007-07-12 | Showa Denko Kk | リフレクター枠体およびリフレクター枠体を備えた面光源装置、ならびに、その面光源装置を用いた表示装置 |
EP1957858A1 (en) * | 2005-11-29 | 2008-08-20 | Showa Denko K.K. | Reflector frame, flat light source device provided with the reflector frame, and display device using the flat light source device |
WO2007064001A1 (en) * | 2005-11-29 | 2007-06-07 | Showa Denko K.K. | Reflector frame, flat light source device provided with the reflector frame, and display device using the flat light source device |
EP1957858A4 (en) * | 2005-11-29 | 2010-11-24 | Showa Denko Kk | REFLECTOR FRAME, FLAT LIGHT SOURCE EQUIPMENT PROVIDED WITH THE REFLECTOR FRAME, AND LIGHT DISPLAY EQUIPMENT USING THE FLAT LIGHT SOURCE SOURCE |
JP2013041853A (ja) * | 2006-04-21 | 2013-02-28 | Cree Inc | 全般照明用の固体照明器具 |
US8294075B2 (en) | 2006-04-21 | 2012-10-23 | Cree, Inc. | Solid state luminaires for general illumination |
JP2009534792A (ja) * | 2006-04-21 | 2009-09-24 | クリー インコーポレイテッド | 全般照明用の固体照明器具 |
US9605835B2 (en) | 2006-04-21 | 2017-03-28 | Cree, Inc. | Solid-state luminaires for general illumination |
US8946609B2 (en) | 2006-04-21 | 2015-02-03 | Cree, Inc. | Solid state luminaires for general illumination |
WO2008146544A1 (ja) * | 2007-05-25 | 2008-12-04 | Showa Denko K.K. | 発光装置、表示装置 |
US8021011B2 (en) | 2007-05-25 | 2011-09-20 | Showa Denko K.K. | Light-emitting device and display device |
JP2008294309A (ja) * | 2007-05-25 | 2008-12-04 | Showa Denko Kk | 発光装置、表示装置 |
JP2009071254A (ja) * | 2007-08-23 | 2009-04-02 | Panasonic Electric Works Co Ltd | 発光装置 |
JP2008252148A (ja) * | 2008-07-22 | 2008-10-16 | Nichia Corp | 発光装置用のパッケージ及びその製造方法 |
US9366424B2 (en) | 2009-03-02 | 2016-06-14 | Sharp Kabushiki Kaisha | Light source device comprising a driver circuit mounted on a rear surface of a substrate and liquid crystal display device |
WO2010100786A1 (ja) * | 2009-03-02 | 2010-09-10 | シャープ株式会社 | 光源装置および液晶表示装置 |
WO2011040493A1 (ja) * | 2009-10-01 | 2011-04-07 | 株式会社オプトデザイン | 照明光の色補正方法、この色補正方法を採用した光源モジュール及び照明装置 |
JP2011076987A (ja) * | 2009-10-01 | 2011-04-14 | Opt Design:Kk | 照明光の色補正方法、この色補正方法を採用した光源モジュール及びこの光源モジュールを用いた照明装置 |
US9593823B2 (en) | 2011-07-18 | 2017-03-14 | Heraeus Noblelight Gmbh | Optoelectronic module with improved optical system |
JP2014022501A (ja) * | 2012-07-17 | 2014-02-03 | Nitto Denko Corp | 発光装置集合体および照明装置 |
JP2016533641A (ja) * | 2013-10-16 | 2016-10-27 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス部品及びその製造方法 |
JP7408712B2 (ja) | 2016-09-23 | 2024-01-05 | アップル インコーポレイテッド | ユーザインタフェース構造 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2005073621A1 (ja) | 2007-09-13 |
CN1860329A (zh) | 2006-11-08 |
JP3895362B2 (ja) | 2007-03-22 |
US20060186425A1 (en) | 2006-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3895362B2 (ja) | Led照明光源 | |
KR101090575B1 (ko) | 반도체 발광 장치 | |
JP3892030B2 (ja) | Led光源 | |
JP2010098313A (ja) | Ledパッケージモジュール | |
JP4986608B2 (ja) | 発光装置および照明装置 | |
JP2018120959A (ja) | 発光装置及び照明装置 | |
US10529901B2 (en) | Light emitting diode package and method for fabricating the same | |
JP2017162940A (ja) | 発光装置及び照明装置 | |
JP2016167518A (ja) | 発光装置、及び、照明装置 | |
JP2017050445A (ja) | 発光装置、及び照明装置 | |
JP2007012792A (ja) | 発光素子収納用パッケージ、光源および発光装置 | |
JP2008210960A (ja) | 発光装置および照明装置 | |
JP2017204502A (ja) | 発光装置及びその製造方法 | |
JP2010251796A (ja) | 発光モジュール | |
US20120074456A1 (en) | Light emitting device package | |
US10256388B2 (en) | Light-emitting device and illumination apparatus | |
JP2007200974A (ja) | 半導体発光ユニット及びその製法並びに線状光源 | |
TW200933826A (en) | Light emitting diode package | |
JP4601404B2 (ja) | 発光装置および照明装置 | |
JP6064415B2 (ja) | 発光装置 | |
JP4556166B2 (ja) | 光源装置 | |
JP2016127281A (ja) | 発光装置及びその製造方法 | |
KR101039979B1 (ko) | 발광 소자 패키지 및 조명 시스템 | |
JP2017059756A (ja) | 発光装置 | |
JP2007207939A (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200580001080.1 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
DPEN | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2005517420 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 11402928 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: DE |
|
WWP | Wipo information: published in national office |
Ref document number: 11402928 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |