TW567454B - Display module - Google Patents
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- TW567454B TW567454B TW091104766A TW91104766A TW567454B TW 567454 B TW567454 B TW 567454B TW 091104766 A TW091104766 A TW 091104766A TW 91104766 A TW91104766 A TW 91104766A TW 567454 B TW567454 B TW 567454B
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- Prior art keywords
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- 239000000758 substrate Substances 0.000 claims abstract description 53
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- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
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Classifications
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- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
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- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K50/805—Electrodes
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- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K59/10—OLED displays
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- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H10K59/80—Constructional details
- H10K59/805—Electrodes
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- H10K59/80522—Cathodes combined with auxiliary electrodes
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Description
567454 A7 B7 五、發明説明(1 ) 發明範疇 本發明係關於一種主動矩陣顯示模組,特別係關於該顯 示模組設置有包含EL(電致發光)元件或LED(發光二極體) 等發射裝置之像素,其中經由導通電流流經有機半導體薄 膜等發射層以及使用像素電路控制像素的發射操作而發 光。 發明背景 晚近,於近代生活上隨著先進資訊網路技術的發明,對 個人電腦、汽車導航系統、攜帶型遠端終端裝置以及通訊 網路設備或其組合產品的需求日增。用於前文所述產品, 此種顯示裝置適合輕薄短小且省電,因此結合此種光電裝 置例如自行發光EL元件或LED液晶顯示器或顯示模組變實 用。 後述顯示模組之特性為具有高度可視性,以寬廣觀視角 處理,且由於反應性高故適合做為行動顯示,該模組據稱 特別適合用於影像顯示。特別,結合有機EL元件(也稱做有 機LED元件;後文於適當處簡稱為〇LED)之顯示裝置,該裝 置之發射層係由有機物質製成,隨著其發光效率的高度改 良以及隨著網路技術的進展而提升影像通訊的可行性,讓 此種結合有機EL元件之顯示裝置變成高度可期。〇led顯示 裝置為二極體結構,其中有機發光層係插置於二片電極間。 如後述,主動矩陣驅動方法,其中薄膜電晶體(後文若屬 適當稱做為TFT)係做為像素的切換元件,主動矩陣獎動方 法可有效提升此種OLED顯示裝置之電源效率。於先前技藝 -4- 木紙張义度適用中阐國家標準(CNS) Λ4規格(210 X 297公帑)
567454 A7 B7 五、發明説明(2 ) 藉主動矩陣軀動方法操作OLED顯示裝置係揭示於曰本專利 申請公開案第HEI 4-328791或及第8-241048號或美國專利 第5550066號(舉例),該顯示裝置之驅動電壓係揭示於國際 公告案第W098/36407號等。 OLED顯示裝置之典型像素結構包含二個薄膜電晶體或 TFTs等於第一及第二主動元件,其中第一者為切換電晶體 ,而其中第二者為驅動器電晶體,以及像素軀動電路(後文 於適當處稱之為像素電路)包含一資料信號儲存裝置之電 容器,該像素電路控制OLED顯示裝置之發光亮度。像素係 設置於矩陣的各別交叉點,其中供給資料信號(或影像信 號)之資料線有Μ條,以及掃描線(後文若屬適當稱做為閘極 線)有Ν條,排列成Ν行X Μ列之排列。 為了驅動像素,掃描信號(閘信號)循序供給Ν條閘極線, 因而將切換電晶體轉成導通態條件,於一框時間Tf以内垂 直掃描操作結束,因而新供給導通態電壓給第一閘極線。 前述驅動方法中,供給導通態電壓給一閘極線需要的時 間定義為Tf/N或以下。通常,於實際應用時,一框時間值 Tf約為1/60秒。須注意一框時間以二攔位表示,每一攔位 時間變成等於半個一框時間。 於導通態電壓供給某條閘極線期間,全部連接至對應資 料線之切換電晶體皆進入導通態條件,與其同步,資料電 壓(影像電壓)同時或循序供給Μ列資料線,該排列常見於主 動矩陣液晶顯示裝置。 於導通態電壓(後文若屬適當稱做為「οη」,而關斷態稱 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(21〇 X 297公货)
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567454 A7 ____B7 五、發明説明(4 ) 。但,此種終端配置難以應用至主動矩陣型驅動顯示模組。 換言之,主動矩陣驅動OLED顯示模組係排列成經由連接 一電極至切換電晶體輸出端子,同時連接另一電極至電容 is么用電壓線或供給電流給OLED的電流供應線而進行供給 電流至電容器,維持顯示經歷一框時間。 圖9為顯示先前OLED顯示模組之一例之方塊圖,圖1〇為顯 示圖9所示模組像素配置之說明圖。本顯示模組(影像顯示 模組)係設置於有玻璃等絕緣材料製成的基板SUB上,讓資 料驅動電路DDR、閘極驅動電路GDR及電流供應電路CSS係設 置於附圖虛線包圍的顯示區段AR周圍,於該顯示區段AR, 多數資料線DL及多數閘極線GL排列成矩陣。 資料驅動電路DDR包括NP-通道薄膜電晶體TFT之互補電 路;或移位暫存器電路、位準位移器電路及類比切換電路 組成單一(N或P)通道薄膜電晶體TFT。須注意,電流供應電 路CSS可修改成只有一條匯流排線,而電流係由外部電源供 應。 圖9顯示一種系統,其中電容器之共通電壓線C01IIL係設置 於顯示區段AR,電容器之其它電極係連接至共通電壓線 COML。共通電壓線COML係由共通電壓供應匯流排線COMB之 一端子C0MT導引入至外部共通電壓源。注意,也已知其它 系統,該系統中,電容器係連接至電流供應線而未設置共 通電壓線。
如圖10所示,像素PX包含第一薄膜電晶體TFT1或切換電 晶體,第二薄膜電晶體TFT2或驅動器電晶體,電容器CPR 本紙張尺度逋用中國國家標準(CMS) A4規格(210 X 297公釐) 567454 A7 B7 五、發明説明(5 ) 及有機發光二極體OLED,其係設置於由資料線DL及閘極線 GL包圍區。TFT1之閘極係連接至閘極線GL,而其汲極係連 接至資料線DL。TFT2之閘極係連接至TFT1之源極,電容器 CPR之一電極(正極)係連接至該源極。 圖11為方塊圖進一步說明圖9所示顯示模組之排列,該模 組設置有如圖10所示像素配置。TFT2汲極連接至電流供應 線CSL,而其源極係連接至有機發光二極體OLED第一電極 (此處為正電極)AD。電容器CPR之另一電極(負極)係連接至 由共通電壓供應匯流排線COMB分歧的共通電壓線COML。資 料線DL係藉資料驅動電路DDR驅動,而掃描線(或閘極線)GL 係藉閘極驅動電路GDR驅動。電流供應線CSL係透過電流供 應匯流排線CSLB且經由如圖9所示之電流供應電路CSS或端 子而連接至外部電源。 圖10及11中,當藉閘極線GL選定一個像素PX而TFT1置於 on-態條件時,資料線DL供給的視訊信號儲存於電容器CPR 。然後,當TFT1置於off-態條件時,TFT2轉成on-態條件, 讓電流由CSL流至OLED,該電流實際可維持完整不變經歷一 框時間。此時導通電流係藉儲存於電容器之信號電荷調節。 電容器CPR之操作位置係由共通電壓線C0ML之電位調節 ,其控制像素之發光表現。OLED發出之電流由其陰極CD流 至電流汲極線(圖中未顯示)。 前述系統要求設置共通電壓線穿過部份像素區,造成所 謂孔徑比低劣,且限制模組整體顯示亮度的改進。 圖12為方塊圖顯示於圖11所示類似配置之先前OLED顯示 -8 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
線 567454 A7 B7 五、發明説明(7 一絕緣層IS1,掃描或閘極線(閘極)GL,第二絕緣層IS2, 紹線形成的源極SD,第三絕緣層IS3,被動薄膜PSV,第一 電極層AD,有機發光層〇LE及第二電極層CD。 選定薄膜電晶體(或驅動器電晶體)時,該電晶體包含多 晶石夕半導體層PSI、閘極線GL及源極SD,有機發光元件發光 ,該有機發光元件包含第一電極AD連接源極SD、有機發光 層OLE及第二電極層CD,該光線L係由基板SUB射出。 此種案例中,若於該像素第二電極層CD發現腐蝕或部份 分解’則電流供應不充份會由該像素改道,因而造成發光 不足或無發光,結果導致此種顯示器具有所謂的點缺陷或 區缺陷之瑕疲。 本發明係提供一種允許影像於高品質顯示之顯示模組, 本發明經由改良對包含像素之第二電極層之電源供應機構 ,因而避免第二電極層腐姓。 為達此項目的,本發明係配置成連接第二層的電極層係 a又置於基板上,其中該電極層係經由接觸孔連接至第二電 極層,第二電極層之引出線為基板上塗覆以被動薄膜的下 方佈線。 此種配置提供高度可信的顯示模組,其避免陰極腐蝕, 同時允許影像以高品質顯示。根據本發明之顯示模組之特 色在於: (1) 一像素係設置於多數掃描線與多數資料線間各別交 又點,該線於基板上之顯示區排列成矩陣,設置電流供應 線而對該像素供應顯示電流,其中該像素設置有主::: -10-
567454 A7 B7
五、發明説明 ,該主動元件係由掃描線選定;資料儲存元件,A 一 件於0Π_態時該資料儲存元件儲存資料線供應的資料信 ;以及一發射元件其係根據儲存資料儲存元件的資料^號 而藉電流供應線供應的電流發光,其中該發光元件包含丄 第-電極層、-覆蓋於第一電極層上之有機發光層::一 形成於有機發光層上之第二電極層,其中一電極層係設置 於基板上,該層係比第二電極層更低,且塗覆以絕緣或被 動薄膜,以及第二電極層係貫穿接觸孔連接至該層。 (2) 配置(1)進一步包括一第一終端襯墊其由外部電路供 給資料信號給資料驅動電路,一第二終端襯墊其供給閘極 信號給閘極驅動電路,以及一第三終端襯墊其供給電流給 電流供應匯流排線,以及一第四終端概塾其連接關聯第二 電極層之電極層,該等襯墊係設置於基板顯示區外側。 (3) 配置(2)進一步包括電流供應佈線其連接電流供應匯 流排線連同電流供應線至第三終端襯墊;以及一佈線其連 接電極層連同第二電極層至第四終端襯墊。 (4) 配置(1)或(2)其特徵在於第一至第四終端襯墊係設 置於基板一侧。 (5) 配置(4)其進一步特徵在於電流供應佈線以及連接電 極層與第二電極層至第四終端襯墊的佈線係位在毗鄰基板 之該側之一側。 (6) 配置(4)其進一步特徵在於電流供應佈線以及連接電 極層與第二電極層至第四終端襯墊的佈線係位在毗鄰基板 之該側之兩側。 -11 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公货)
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線 567454
(7) 配置(1)或(2)其進一步特徵在於第三及第四終端襯 墊係設置於基板第一側而與基板之設置第一及第二終端襯 墊之第二側位在對側方向。 (8) 配置(2)至(7)中之任一項,其特徵在於該電極層結合 第二電極層係設置於基板上俾共通連接電流供應線之電流 供應匯流排線更外側。 (9) 配置(2)至(7)中之任一項,其特徵在於該電極層結合 第二電極層係設置於基板上俾共通連接電流供應匯流排線 之電流供應佈線更外側。 需了解本發明非僅限於前述配置及後述具體實施例,反 而可於隨附之申請專利範圍以多種方式修改。本發明之其 它目的及配置由後文說明將更為澄清。 圖式之簡單說明 圖1為方塊圖顯示根據本發明之顯示模組第一具體實施 例之配置。 圖2為視圖顯示對應圖1所示顯示模組一像素的像素電路 配置。 圖3為視圖顯示一像素附近,用以說明根據本發明之顯示 模組之發光機構。 圖4為視圖顯示第二電極層以及相關電極層連接狀態。 圖5為方塊圖顯示根據本發明之顯示模組第二具體實施 例之配置。 圖6為方塊圖顯示根據本發明之顯示模組第三具體實施 例之配置。 本紙張尺度適用中國國家標苹(CNS) A4規格(210 X 297公货)
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k 567454 A7 _B7 五、發明説明(11 ) 該區也由電流供應線CSL所包圍。於基板SUB—側,設置終 端襯墊PAD1及PAD2俾由外側電路供給信號及電壓給閘極驅 動電路GDR及資料驅動電路DDR。 圖2為視圖顯示對應於圖1所示顯示模組之一像素的像素 電路配置。本具體實施例中,一個像素係形成於由資料線 DL(m + 1)、掃描線GL(n + 1)及GL(n)以及電流供應線CSL包 圍的區域。此處假設被掃描或被選定的掃描線為GL(n + 1)。 注意多個像素中由掃描線GL(n+l)選定之一像素PX。第 一薄膜電晶體TFT1為切換電晶體,第二薄膜電晶體TFT2為 驅動器電晶體’該等電晶體為主動元件。TFT1閘極係連接 至掃描線GL(n + 1),其汲極係連接至資料線DL(m + 1),及 其源極係連接至TFT2閘極。 TFT2汲極係連接至電流供應線CSL,電流由圖1所示電流 供應匯流排線CSB供應至該電流供應線CSL,而其源極係連 接至有機發光二極體OLED之第一電極層AD。做為資料信號 儲存元件之電容器CPR之一端子係連接至TFT1源極與TFT2 閘極的連接點;而其另一端子係連接至恰在其前方的掃描 線 GL(η) 〇 圖2所示像素電路配置中,電容器CPR之連接至TFT1源極 與TFT2閘極連接點之一端子為正極;而其連接至掃描線 GL(n)之另一端子為負極。 有機發光二極體OLED係經由將有機發光層(圖中未顯示) 插置於第一電極層AD與第二電極層CD間構成,其中該第一 電極層AD係連接至TFT2源極;而該第二電極層CD(該層均一 -14- 本紙張义度適用中國國家標準(CNS) A4規格(210 X 297公贽) 567454 A7 B7 五、發明説明(12 ) 形成於全體像素上)係連接至關聯第二電極層CNTB之電極 層,如圖1所示。 電極層CNTB為所謂之電流汲極線(汲極),該層係形成於 基板下層、或形成於終端襯墊PAD1及PAD2同層,且係經由 接觸孔CNT連接至第二電極層CD,以及經由佈線CNTL連接至 形成於終端襯墊PAD1及PAD2同一層的終端襯墊PAD4。 第一電極層佈線之電流供應線CSL係經由電流供應匯流 排線CSB及電流供應佈線CSLL,連接至形成於終端襯墊PAD1 及PAD2同一層的終端襯墊PAD3。接觸第二電極層CNTB的電 極層係設置於基板上位於電流供應匯流排線CSB外側且位 於經密封區SL内部,如附圖虛線顯示。 前述配置其中通過接觸孔CNT接觸第二電極層CD之電極 層CNTB係設置於基板上,位於電流供應匯流排線CSB外側且 位於其密封區以内,特別當軟式印刷電路板上内部電路連 接至其一側的外部電路時,該種配置特別有助於基板上的 佈局設計。 寫入電容器CPR之資料信號,資料信號儲存於電容器CPR 而當TFT1置於on-態條件時做為電荷量,於TFT1被置於of f-態條件,而TFT2轉成on-階段條件時,該資料信號讓電流由 電流供應線CSL流至有機發光二極體0LED,該電流量為儲存 於電容器CPR之電荷量所控制(指示資料信號灰階)。 有機發光二極體0LED發光,其亮度係與供應電流量成比 例,帶有使用的有機發光層材料特有的色彩。通常為了顯 示彩色影像,有機發光層材料隨紅、綠或藍各別像素而改 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
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567454 A7 _____B7 五、發明説明(13 ) 變;或攙混各別色彩之濾色層於有機發光層材料來發白光。 須注意’資料信號可以類比量供應或以分時數位量供應 。灰階控制可結合區域灰階系統,其中劃分為紅、綠及藍 各像素區。 本具體實施例係配置成於各別像素電路之發光操作係由 電極層CNTB或電流汲極線(該層或該線係形成於基板下層 或全體像素上方)放電後,電流由電流供應匯流排線CSB及 第二電極層CD流出,經由佈線CNTL及終端襯墊PAD4流至外 部電路。 -裝 如此,於本具體實施例中,全體電路共通之第二電極層 CD(第二電極層均一形成於基板上側)係經由接觸孔CNT連 接至電極層CNTB。佈線CNTL係形成於電極層CNTB的同一 層。 通常此種顯示模組係利用罐(舉例)形成密封結構俾便確 保功能可信度。於基板SUB上,設置密封區,用以附接此種 密封罐於其上,於該區設置電極層CNTB及佈線CNTI^至少 電極層CNTB係設置於電流供應匯流排線csB外側。 前述電極層CNTB等係形成於基板下層,於其上積層絕緣 薄膜或被動薄膜’因此第二電極,與其接觸之電極層較佳 包括佈線CNTL不會接觸空氣,避免各層受腐蝕且改進可信 度’結果可提供具有高顯示品質之顯示模組。須注意前述 接觸孔可只有一孔,但也可設置多個接觸孔用以儘可能穩 定供應大量電流。 圖3為視圖顯示一像素附近用以說明根據本發明之顯示 -16- 本紙張尺度適用中國國家標準(C NS) A4規格(210 X 297公釐) 567454 A7 B7 五、發明説明(14 ) 模組之發光機構。圖4為視圖顯示第二電極層以及與其接觸 之電極層間之接觸部份。圖1之相同參考符號係對應於相同 元件。附圖參考符號I指示之箭頭係跟蹤促成發光表現的電 流行程。 TFT2為驅動器電晶體。當藉閘線GL選定此TFT2時,具有 灰階值係對應於儲存於電容器CPR之資料信號的電流I,由 電流供應匯流排線分歧的電流供應線經由TFT2,供給有機 發光二極體OLED第一電極層AD。 有機發光二極體OLED發光L,該光具有對應發光層材料 OLE之光譜,讓來自第二電極層CD之電子與第一電極層AD 之電孔於發光層OLE内部復合。各別像素之第一電極層AD 彼此獨立無關,而第二電極層CD係均一形成於全體像素上 方。來自TFT2導引通過OLED之電流I,如圖1所示,路由第 二電極層CD以及於其接觸之電極層CNTB,經由佈線CNTL而 流出至終端襯墊PAD4。如上排列之多個像素係對準成矩陣 ,因而提供二維顯示模組。 圖5為方塊圖顯示根據本發明之顯示模組第二具體實施 例之配置。圖1之相同參考編號係對應於相同元件。本具體 實施例係配置成電流供應匯流排線CSB連接電流供應線CSL 之二終端襯墊PAD3及PAD3’、以及電極層接觸第二電極層 CNTB之終端襯墊PAD4係設置於基板側,該側係與資料驅動 電路終端襯墊PAD1以及閘極驅動電路GDR終端襯墊PAD2設 置該側對向。 此處配置經由接觸孔CNT接觸第二電極層CD之電極層 -17- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X ‘297公釐) 裝 訂
k 567454 A7 B7 五、發明説明(15 ) CNTB,該電極層CNTB係設置於基板SUB上位於電流供應匯流 排線CSB外側及於其密封區以内係有助於基板上的佈局設 計。 根據本具體實施例,介於電流供應匯流排線CSB與其終端 襯墊PAD3及PAD3’間的電流供應佈線CSLL,於基板上長度變 短,讓電流可更均一供給及汲出。如此讓顯示區的發光分 布變均勻,讓影像以高品質顯示。注意,本具體實施例舉 例說明二组電流供應佈線CSLL,但可為其中任一組。若電 流供應佈線CSLL被導引出電流供應匯流排線CSB各端之外 ,則獲得良好對襯效果。 此處配置電極層CNTB經由接觸孔CNT而接觸第二電極層 CD,該電極層CNTB係設置於基板上於電流供應匯流排線CSB 外側以及於其密封區以内,有助於基板上的佈局設計,特 別於内部電路連接至軟式印刷基板的對向兩侧之外部電路 時尤為有幫助。 本發明之配置允許密封區附近的佈線圖案減少,去除密 封材料硬化時遮斷紫外光的障礙,因而讓密封材料可有效 硬化。如此確保模組的密封,結果導致其可信度改良。 圖6為方塊圖顯示根據本發明之顯示模組第三具體實施 例及配置。於圖1相同之參考符號對應於相同元件。本具體 實施例係配置成連接電流供應線CSL之電流供應匯流排線 CSB之終端襯墊PAD3、以及接觸第二電極層之電極層CNTB 終端襯墊PAD4係分開設置於基板一側兩端,於基板該側設 置資料驅動電路之終端襯墊PAD1以及閘極驅動電路GDR之 -18- 本紙張尺度適用中國國家標苹(CNS) A4規格(210 X 297公资)
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▲ 567454 A7 B7 五、發明説明(16 ) 終端襯墊PAD2。 以第一及第二具體實施例之相同方式,經由接觸孔CNT 而接觸第二電極層CD的電極層CNTB係設置於基板上,為於 電流供應匯流排線CSB外侧,及其密封區以内。其它配置係 同圖1第一具體實施例之配置,刪除其解說以免累贅。 此處配置經由接觸孔CNT而接觸第二電極層CD之電極層 CNTB係設置於基板上,位在電流供應匯流排線CSB外侧,其 位在其密封區以内,當内部電路係連接至軟式印刷基板一 側的外部電路時,此種配置特別有助於佈局設計。 圖7為方塊圖顯示根據本發明之顯示模組之第四具體實 施例之配置。圖1相同參考編號係對應相同元件。本具體實 施例係配置成連接電流供應線CSL之電流供應匯流排線CSB 之終端襯墊PAD3、以及接觸第二電極層之電極層CNTB之終 端襯墊PAD4係設置於基板一側,而該侧係與資料驅動電路 終端襯墊PAD1及閘極驅動電路GDR終端襯墊PAD2設置之一 側對向。 以第一至第三具體實施例之相同方式,經由接觸孔CNT 而接觸第二電極層CD之電極層CNTB係設置於基板上,位在 電流供應匯流排線CSB外侧及其密封區以内。 此處配置經由接觸孔CNT而接觸第二電極層CD的電極層 CNTB係設置於基板上,位在電流供應匯流排線CSB外側,且 在其密封區以内,於内部電路係連接至撓性印刷基板對向 兩側的外部電路時特別有助於基板的佈局。此處另一配置 係同圖6所示第三具體實施例,刪除其說明以免冗複。 -19- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)
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線 567454 A7 B7 _ 五、發明説明(17 ) 根據本具體實施例,電流供應匯流排線CSB與其終端襯墊 PAD3間之電流供應佈線CSLL、以及接觸第二電極層CD之電 極層CNT與其終端襯墊PAD4間之佈線CNTL長度變短,允許電 流均勻供應及汲出。如此,讓顯示區内部之發光分布變均 勻,因而可以高品質顯示影像。 此種配置允許密封區附近的佈線圖案減少,因而去除硬 化密封材料時遮斷紫外光的障礙,結果可有效硬化密封材 料。如此對模組進行密封因而進一步改良其可信度。 前述第二至第四具體實施例中,電流供應佈線CSLL以及 電流行程佈線CNTL佔據基板上寬廣面積且有足夠厚度,因 此讓該等佈線牢固可靠。又,特別於第二及第四具體實施 例,其中終端襯墊間距長度短因而確保電流行程更穩定。 圖8為方塊圖顯示根據本發明之顯示模組第五具體實施 例之配置。圖1之相同參考編號對應相同元件。本具體實施 例係配置成接觸第二電極層之電極層CNTB係設置於基板一 側,該側係毗鄰於終端襯墊PAD1至PAD4設置該側,而與閘 極驅動電路GDR設置該側對側,且位在電流供應佈線CSLL 外側。 此處配置,經由接觸孔CNT而接觸第二電極層CD之電極層 CNTB係設置於基板上,位於電流供應佈線CSLL外側,導引 電流供應匯流排線CSB至終端襯墊PAD3,且位於其密封區以 内,可與閘極驅動電路GDR做對稱佈局,因而讓基板全體佈 局平衡良好。其它配置係同圖1所示第一具體實施例,刪除 其說明以免冗複。 -20- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公赘)
k 567454 A7 B7 五 、發明説明(18 ) 又,根據本具體實施例,介於電極層CNTB與其終端襯墊 PAD4之佈線CNTL間距長度變短,讓電流可均一供給及汲出 。如此讓顯示區内部之發光分布變均一,因而以高品質顯 示影像。 須注意,前述各別具體實施例中,第一及第二電極層各 別對應於陰極層及陽極層,於本發明也可做相反對應。又 ,本發明非僅限於前述OLED顯示模組,也可應用至進行與 OLED對偶部份相同發光操作的其它顯示模組。 如前述,根據本發明,包含顯示模组像素及其終端襯墊 附近之電極層可避免腐蝕,因而免除顯示瑕疵。又,電流 可經由電流供應線穩定有效地供應,因此提供允許以高品 質顯示影像的顯示模組。 -21 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
Claims (1)
- 567454 丨修正 第091104766號專利申請案 中文申請專利範圍替換本(92年9月) 申請專利範圍 1 · 一種顯不模組,包含一像素,其設置於多數掃描線與多 數資料線間之各別交叉,該等線係於基板之一顯示區内 部排列成矩陣,以及一電流供應線,其供應電流給該像 素, 其中該像素包含一藉該掃描線選定之主動元件、一當 主動元件置於on-態時,儲存資料線供給之資料信號至 資料儲存元件、以及一發射元件,其係根據儲存於資料 儲存裝置之資料信號而藉電流供應線供應的電流而發 光, 其中該發射元件包含一由該主動元件驅動之第一電 極層、一塗覆於第一電極層上之有機發射層、以及一形 成於該有機發射層上之第二電極層,以及 其中一電極層係設置於基板上低於該第二電極層,且 被塗覆以絕緣膜及被動膜之一,以及該第二電極層係經 由接觸孔而連接至該電極層。 2 ·如申請專利範圍第1項之顯示模組,其進一步包含一第 一終端襯墊,其供給來自外部電路之資料信號給一資料 驅動電路,一第二終端襯墊,其供給掃描信號給一閘極 驅動電路,一第三終端襯墊,其供給電流至共通連接該 電流供應線之電流供應匯流排線,以及一第四終端襯塾 ,其係連接至接觸第二電極層之該電極層,該等終端襯 墊係設置於該基板之顯示區外側。 3 ·如申請專利範圍第1項之顯示模組,其進一步包含一電 流供應佈線’其連接共通連接該電流供應線之電流供應 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公赞) 567454 ABCD 六、申請專利範圍 匯流排線至第三終端襯墊;以及一佈線,其連接接觸第 二電極層之該電極層至第四終端襯塾。 4 ·如申請專利範圍第1項之顯示模組,其中該第一及第四 終端觀塾係設置於該基板一側。 5 ·如申晴專利範圍第1項之顯示模組,其進一步包含一電 流供應佈線,其連接共通連接該電流供應線之電流供應 匯流排線至第三終端襯墊;以及一佈線,其連接接觸第 二電極層之該電極層至第四終端襯塾, 其中σ亥電供應佈線及該佈線係被導引至基板田比鄰 該一側之側邊。 6·如申請專利範圍第1項之顯示模組,其進一步包含一電 流供應佈線,其連接共通連接該電流供應線之電流供應 匯排線至第二終端槪塾,以及《^佈線,其連接接觸第 二電極層之該電極層至第四終端襯塾, 其中該電流供應佈線及該佈線係被導引至基板毗鄰 該一侧之各別側邊。 7 ·如申請專利範圍第1項之顯示模組,其進一步包含一第 一終端襯塾’其供給來自外部電路之資料信號給一資料 驅動電路,一第二終g襯墊,其供給掃描信號給一閘極 驅動電路,一第三終端襯墊,其供給電流至電流供應匯 流排線,以及一第四終端襯塾,其係連接至接觸第二電 極層之該電極層, 其中該第三及第四終端襯墊係設置於基板之與設置 第一及第二終端襯墊該側對側上。 -2· 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) " ' ---- 567454 A B c D 六、申請專利範圍 8 ·如申明專利範圍第1項之顯示模組,其中該接觸第二電 極層之電極層係設置於基板上位於共通連接電流供應 線之電流供應匯流排線外側。 9 ·如申明專利範圍第1項之顯示模組,其進一步包含一第 三終端襯墊,其係供給電流給共通連接電流供應線之電 流供應匯流排線,一第四終端襯墊,其係連接至接觸第 二電極層之該電極層,一電流供應佈線,其係連接該電 流供應匯流排線至該第三終端襯墊,以及一佈線,其係 連接於該第二電極層接觸之該電極層之第四終端襯墊 ,其中接觸第二電極層之該電極層係設置於基板上位於 電流供應佈線外側。 10· •種具有一藉電流控制之發光層之顯示模組,包含: 多數主動矩陣元件,其包括掃描線、資料線及薄膜電 晶體,其設置於基板上之各掃描線與各資料線之各別交 叉點; 夕數發光元件,其係設置於顯示區且分別連接至薄膜 電曰曰體各。亥發光裝置包括一各別藉主動矩陣元件驅動 之第一電極層、一發電電流至第二電極層、以及一夾置 於该第一電極層與第二電極層間之有機發光層,·以及 一連接電極層,其係設置於顯示區外側與密封區内側 間,用以岔封設置於基板上之主動矩陣元件及發光元件 ’該連接電極層係經由形成於連接電極上方的絕緣膜接 觸孔而電性連接至第二電極層。 11 ·如申請專利範圍第1 〇項之顯示模組,其進一步包含多數 -3- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 8 8 8 8 A BCD 567454 六、申請專利範圍 電流供應線,其係根據資料線上傳輸之各別資料信號而 供應電流給發光元件,以及一電流供應匯流排線,其係 連接至各該電流供應線,其中該電流供應匯流排線係設 置於顯示區外側與連接電極層間。 -4 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 χ 297公釐)
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