TW518640B - Dual substrate loadlock process equipment - Google Patents

Dual substrate loadlock process equipment Download PDF

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Publication number
TW518640B
TW518640B TW089126505A TW89126505A TW518640B TW 518640 B TW518640 B TW 518640B TW 089126505 A TW089126505 A TW 089126505A TW 89126505 A TW89126505 A TW 89126505A TW 518640 B TW518640 B TW 518640B
Authority
TW
Taiwan
Prior art keywords
substrate
load chamber
support
chamber
plate
Prior art date
Application number
TW089126505A
Other languages
English (en)
Inventor
Shinichi Kurita
Wendell T Blonigan
Akihiro Hosokawa
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23843644&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW518640(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW518640B publication Critical patent/TW518640B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/068—Stacking or destacking devices; Means for preventing damage to stacked sheets, e.g. spaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/02—Controlled or contamination-free environments or clean space conditions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/04—Arrangements of vacuum systems or suction cups

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Nonlinear Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
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518640 結構及該第二支撐結構係可相對於該冷卻板作移動。 4. 如申請專利範圍第3項所述之負載室，其中該冷卻板係 附著至該室體。 5. 如申請專利範圍第4項所述之負載室，其中該冷卻板之 中具有多數孔，以允許該第二支撐結構可移動於其間。 6. 如申請專利範圍第1項所述之負載室，其中該冷卻板包 含至少一結構從其中延伸出，且該中間板包含至少一開 口，該開口的尺寸係製作成可容納從該冷卻板延伸出之 至少一結構。 7. 如申請專利範圍第1項所述之負載室，其更包含一下 板，其中該第一支撐結構係連接至該中間板且該第二支 撐結構係連接至該下板。 8. 如申請專利範圍第1項所述之負載室，其中該中間板包 含^一冷卻層及一絕緣層。 9. 如申請專利範圍第1項所述之負載室，其中該第一支撐 結構包含多數銷，及該第二支撐結構包含多數銷。 1 0 . —種基材處理系統，至少包含： 第25頁 518640 至少一處理室； 一傳送室，連接至該至少一處理室；及 一負載室，連接至該傳送室，該負載室至少包含： 一單一基材上支撐件及一單一基材下支撐件； 一電梯，用以上升及下降該單一基材上支撐件 及該單一基材下支撐件； 一冷卻板，安置於該負載室中，並定位以接收 來自該單一基材下支樓件之一單一基材； 一中間板，安置於該冷卻板上方及該加熱元件 下方； 一裝載/卸載孔徑，一未處理基材可以經由該裝 載/卸載孔徑而載入至該負載室中，及一已處理基材可 以經由該裝載/卸載孔徑而由該負載室卸載； 一傳送孔徑，一未處理基材可以經由該傳送孔 徑從該負載室傳送至該傳送室，及一已處理基材可以經 由該傳送孔徑從該傳送室被傳送至該負載室；及 一加熱元件，安置於該單一基材上支樓件上方。 1 1.如申請專利範圍第1 0項所述之基材處理系統，其中該 單一基材上支撐件係連接至該中間板。 1 2.如申請專利範圍第1 1項所述之基材處理系統，更包含 一氣體入口 ，用以供應一氣體至該負載室。 第26頁 518640 1 3 .如申請專利範圍第1 2項所述之基材處理系統，其中該 負載室包含一頂面’該氣體入口係沿著該負载室之頂面 ί己置。 1 4 , 一種負載室，至少包含： 一第一結構，適用以支撐一第一基材； 一第二結構，適用以支撐一第二基材，其中該第二 結構包括數個連接至一下板的銷，其中該數個銷包括中 心銷及外銷； 一冷卻板，安置於該第一結構下方；及 一第三結構，用以使該第一結構與該第二結構互相 連接，該第三結構係適用以使該第一及第二結構一起在 垂直方向移動而不受該冷卻板支配。 1 5 .如申請專利範圍第1 4項所述之負載室，更包含一加熱 裝置安置於該第一結構上方。 1 6.如申請專利範圍第1 5項所述之負載室，更包含一頂板 安置於該加熱裝置及該第一結構之間。 1 7.如申請專利範圍第1 4項所述之負載室，其中該第一結 構包含多數支樓件’適用以支樓一玻璃基材。 1 8.如申請專利範圍第1 4項所述之負載室，更包含一第一 第27頁 518640 孔徑位於該負載室之第一侧及一第二孔徑位於該負載 室之第二側。 1 9.如申請專利範圍第1 8項所述之負載室，更包含一正在 處理之基材位於該第二結構上及一未處理基材位於該 第一結構上。 20。如申請專利範圍第14項所述之負載室，更包含一電 梯，該電梯適用以改變該第一、第二及第三結構之垂直 位置並保持該冷卻板靜止不動。 2 1 · —種用以處理顯示器基材之負載室，至少包含： 一室體，其界定一第一孔徑於一第一側表面及一第 二孔徑於一第二側表面； 一上支撐件，適用以支撐一顯示器基材； 一中間板，連接至該上支撐件； 一下支撐件，適用以支撐一顯示器基材； 一下板，連接至該下支樓件； 一單一冷卻板，定位於該室内，該單一冷卻板係定 位於該中間板及該下板之間； 一加熱元件，安置於該上支撐件上方；及 一上板，定位於該上支樓件上方； 其中該上板、該中間板及該下板係互相連接，以使 得該上板、該中間板及該下板可在垂直方向一起移動而 第28頁 518640 不受該冷卻板支配。 22. 如申請專利範圍第2 1項所述之負載室，更包含同時有 一已處理的顯示器基材於該下支撐件上及一未處理的 顯示器基材於該上支撐件上。 23. 如申請專利範圍第2 1項所述之負載室，其中該顯示器 基材包含玻璃。 24. 如申請專利範圍第2 1項所述之負載室，其中該上支撐 件及該下支撐件的尺寸係製作成可承接一形狀為矩形 的玻璃基材，該矩形之長度至少為650公釐且寬度至少 為8 3 0公釐。 2 5 .如申請專利範圍第2 1項所述之負載室，更包含一氣體 入口及一氣體供應器，該氣體供應器包含氦氣。 26.如申請專利範圍第25項所述之負載室，更包含一過濾 器鄰接於該氣體入口。 2 7.如申請專利範圍第21項所述之負載室，更包含一電梯 連接於該下板並適用以使該下板、該中間板及該上板在 一垂直方向移動，其中當該電梯移動該下板、該中間板 及該上板時，該冷卻板係為靜止不動。 第29頁 518640 二8 .如申#利釦圍第2 1項所述之負載室，其中該中間板 包含一冷卻層及一絕緣層。 2 9. —種負載至糸統，至少包含. 一負載室； 一下板’具有多數支撐件自其中延伸出，該等支撐 件適用以接收一單一基材； 一冷卻板’安置於該室中，該冷卻板係定位以接收 來自該支撐結構之一單一基材，該冷卻板包含多數孔徑 於其中’且該等孔徑的尺寸係製作成可接收該等由該下 方板延伸之支撐件； 一中間板，具有多數支撐件自其中延伸出，該等由 該中間板延伸之支撐件適用於接收一單一基材’該中間 板係定位於該冷卻板上方； 該下板係與該冷卻板成間隔设置且係位於該冷卻板 下方；及 該下板及多數支撐件係適用以在-垂直方向移動而 不受該冷卻板支配。 其中該中 垂直方向 h ren姑O Q tS所球之負載至糸統 30.如申請專利範圍第29項所 / A t_L扣、查接且係適用以在 間板及該下板係彼此相連接 上一起移動。 第30頁 518640 3 1 .如申請專利範圍第3 0項所述之負载室系統，更包含一 上板定位於該中間板上方且係連接於該中間板及該下 板，以使得該上板、該中間板及該下板係在一垂直方向 一起移動。 3 2.如申請專利範圍第29項所述之負載室系統，更包含一 加熱元件定位於該中間板上方。 3 3.如申請專利範圍第29項所述之負載室系統，更包含一 電梯連接於該下板且適用以改變該下板及多數支撐件 的垂直位置，同時該冷卻板係保持在一固定的垂直位 置，其中該電梯係定位於該下板下方。 3 4. —種負載室系統，至少包含： 一負載室； 一下支撐件結構，適用以支撐該負載室内之一基材； 一上支撐件結構，適用以支撐該負載室内之一基材； 一冷卻板，定位於該負載室中之該下支撐件結構與 該上支撐件結構之間，該冷卻板係適用以支撐一基材； 及 一電梯，定位於該下支撐件結構下方且連接於該下 支樓件結構及該上支撐件結構，該電梯係適用以改變該 下支撐件結構及該上支撐件結構的垂直位置，同時該冷 卻板係保持在一固定的垂直位置。 第31頁 518640 3 5.如申請專利範圍第34項所述之負載室系統，更包含一 加熱元件定位於該負載室中之該上支樓件結構上方。 3 6.如申請專利範圍第3 5項所述之負載室系統，更包含一 第一孔徑定位於該負載室之第一側上及一第二孔徑定 位於該負載室之第二側上，其中該上支撐件結構、該下 支撐件結構及該冷卻板係定位於該第一孔徑與該第二孔 徑之間。 3 7.如申請專利範圍第34項所述之負載室系統，更包含一 氣體入口適用以供應一氣體至該負載室。 3 8.如申請專利範圍第3 7項所述之負載室系統，其中一包 含氦氣之氣體係供應至該負載室。 3 9.如申請專利範圍第3 7項所述之負載室系統，其中一包 含氦氣及氮氣之氣體係供應至該負載室。 4 0.如申請專利範圍第39項所述之負載室系統，其中該供 應至該負載室之氣體係具有約754-759托耳壓力之氮氣 及約1 - 6托耳之氦氣。 4 1 .如申請專利範圍第3 7項所述之負載室系統，其中該負 第32頁 518640 載室係包含一頂面，該氣體入口係沿著該負載室 配置。 42 . —種處理系統，至少包含： 至少一處理室； 一傳送室，連接至該至少一處理室；及 一負載室，連接至該傳送室，該負載室至少 一下支撐件結構，適用以支撐一基材； 一上支撐件結構，適用以支撐一基材； 一冷卻板’定位於該下支禮件結構與該 件結構之間，該冷卻板適用以支撐一基材；及 一電梯，連接至該下支撐件結構及該上 結構，該電梯定位於該下支撐件結構下方且適用 該下支撐件結構及該上支撐件結構之垂直位置， 冷卻板係保持在一固定的垂直位置。 43. 如申請專利範圍第42項所述之處理系統，其中 一處理室係包含至少一室，該至少一室係由一物 沉積室、一化學氣相沉積室、一蝕刻室及一加熱 成之群組中選出。 44. 如申請專利範圍第42項所述之處理系統，更包 部基材供給台，其包含： 一第一機械手臂，以傳送基材至該負載室並 第33頁 之頂面 包含： 上支撐 支撐件 以改變 同時該 該至少 理氣相 室所組 含一外 從該負 518640 載室拾取基材； 至少一未處理基材卡匣，以供應未處理基材至該負 載室；及 至少一已處理基材卡匣，以接收來自該負載室之已 處理基材。 45.如申請專利範圍第44項所述之處理系統，更包含一第 二機械手臂，用以傳送一基材於該負載室及·該傳送室之 間。 4 6, —種基材處理系統，該系統包含至少一處理室及一傳送 室連接至該至少一處理室，該系統更包含一負載室，該 負載室至少包含： 一單一基材上支撐件及一單一基材下支撐件； 一傳送孔徑，適用以傳送一單一基材於該傳送室及 該負載室之間； 一冷卻板，安置於該負載室中，位於該上支撐件及 下支撐件之間，其並定位以接收來自該單一基材下支撐 件之一單一基材，該冷卻板包括數個孔徑，該單一基材 下支撐件可延伸通過該孔徑以支撐一基材； 一卡匣結構，連接該單一基材上支撐件及該單一基 材下支撐件，而未連接於該冷卻板；及 一電梯，適用以上升及下降該卡匣結構，以使得該 單一基材上支撐件及該單一基材下支撐件係一起移 第34頁 518640 動，阳該冷卻板則保持在〆固定位置。 申明專利範圍第46項所述之基材處理系統，其中該 貝载室更包含—加熱元件安置於該單一基材上支撐件 上方。 ' 48·如申請專利範圍第46項所述之基材處理系統，其中該 負载至更包含一含有氦氣及氮氣的冷卻氣體。 4 9.'一 種 ^^右一a 3另一員载室及—傳送室之基材處理系統，至少包 含： 第 支樓機構，用以支撐該負載室中之-未處理 基材； 加熱機構，用4 , 用以加熱該負載室中之該第一支撐機構 上的該未處理基材； $ -支撐機構’用以支撐該負載室中之一已處理 基材，該第二主擔嫵^ 牙钱構係定位於該第一支撐機構下方且 具有數個支撐銷； ϋ機m ’ n該第_支撐機構及該第二支撑機 構連接在一起，以使得該第一支撐機構及該第二支撐機 構係一致移動； 冷卻機構’用以冷卻該負載室中之該已處理基材， 該冷卻機構包含一具有數個孔徑之板，該第二支撐機構 之該數個支撐銷可通過該等孔徑以支撐該已處理基材； 第35頁 518640 機構，用以改變該第一支撐機構及該第二支撐機構 之位置，同時保持該板在一固定位置；及 其中該加熱機構及該冷卻機構係同時安置於該負載 室中。 第36頁
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