WO2010067544A1 - 基板冷却装置および基板処理システム - Google Patents
基板冷却装置および基板処理システム Download PDFInfo
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- WO2010067544A1 WO2010067544A1 PCT/JP2009/006550 JP2009006550W WO2010067544A1 WO 2010067544 A1 WO2010067544 A1 WO 2010067544A1 JP 2009006550 W JP2009006550 W JP 2009006550W WO 2010067544 A1 WO2010067544 A1 WO 2010067544A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67769—Storage means
Definitions
- the present invention relates to a substrate cooling apparatus and a substrate processing system.
- Substrate processing apparatuses that perform plasma processing or heat treatment on a substrate such as a wafer or a glass substrate are known.
- the substrate is processed in a clean room in which the number of particles is suppressed.
- a FOUP Front Opening Unified
- Closed containers called “Pod” have come to be used.
- the hoop is often made of a resin material and has a low heat-resistant temperature. Therefore, if a substrate having a high temperature immediately after processing is stored as it is, the hoop may be deformed or damaged.
- Patent Document 1 discloses a substrate processing apparatus including a cooling gas injection nozzle that injects a gas toward a substrate. According to this substrate processing apparatus, the temperature of the processed substrate can be lowered. However, the temperature of the gas rises while the injected gas flows along the main surface of the substrate, which may reduce the cooling effect on the downstream side. For this reason, the cooling time may not be shortened.
- Patent Document 2 discloses a cooling table that cools a substrate placed by allowing a coolant to flow inside. According to this cooling table, the temperature of the processed substrate can be lowered. However, since the cooling table is provided only on one main surface side of the substrate, the cooling effect may be reduced. For this reason, the cooling time may not be shortened. In this case, if the contact area between the cooling table and the substrate is increased, heat exchange by heat conduction can be increased. However, if the heat exchange by heat conduction is increased, the cooling rate becomes too fast and the substrate may be damaged. Further, if the contact area is increased, scratches and particles may be generated.
- the present invention provides a substrate cooling apparatus and a substrate processing system capable of shortening the time for cooling a processed substrate.
- a substrate cooling apparatus that cools a processed substrate, and is provided so as to face a housing having a space for housing a substrate therein and an inner wall of the housing.
- a pair of holding portions having a groove portion supporting the vicinity of the end portion of the substrate, and a pair of cooling means provided with the pair of holding portions sandwiched in a direction crossing a direction in which the holding portions face each other.
- a substrate cooling device comprising a cooling unit.
- a processing apparatus that processes a substrate
- a storage apparatus that stores the substrate, the substrate cooling apparatus, the processing apparatus, the storage apparatus, and the substrate
- a substrate processing system comprising: a cooling device; and a transfer device that transfers the substrate between them.
- a substrate cooling apparatus and a substrate processing system capable of shortening the time for cooling a processed substrate.
- FIG. 2 is a cross-sectional view taken along arrow AA in FIG. 1. It is a schematic diagram for illustrating the board
- FIG. 5 is a cross-sectional view taken along the line BB in FIG. 3. It is a schematic diagram for illustrating the substrate processing system concerning a 3rd embodiment of the present invention. It is a schematic cross section for illustrating the composition of a processing room. It is a schematic diagram for illustrating the operation of the substrate processing system. It is a schematic diagram for illustrating the operation of the substrate processing system.
- FIG. 1 is a schematic view for illustrating a substrate cooling apparatus according to the first embodiment of the present invention.
- the arrow X, arrow Y, and arrow Z in FIG. 1 represent three directions orthogonal to each other, the arrow X and arrow Y represent the horizontal direction, and the arrow Z represents the vertical direction.
- 2 is a cross-sectional view taken along the line AA in FIG. As shown in FIGS.
- the substrate cooling apparatus 1 has a housing having a space 2 in which one end in the Y direction is opened to insert the substrate W therein and the substrate W is accommodated therein. 10 is provided.
- a pair of holding portions 3 that are provided on the inner wall 10 a of the housing 10 so as to face each other and have a groove portion 4 that supports the vicinity of the end portion of the substrate W are provided.
- a pair of grooves 4 provided in the holding part 3 are also provided so as to face each other.
- the dimension in the X direction of the groove part 4 (the depth dimension of the groove part 4) is a dimension capable of stably supporting the substrate W.
- the dimension in the X direction of the groove portion 4 is a minimum dimension necessary for stably supporting the substrate W.
- a plurality of the pair of holding portions 3 are provided with a predetermined interval in the Z direction.
- a pair of holding portions 3 and cooling portions 5 are alternately provided in the Z direction. That is, the pair of holding units 3 and the cooling unit 5 are alternately provided in a direction (Z direction) intersecting with a direction (X direction) in which the holding units 3 face each other. Therefore, the groove 4 can support the vicinity of the opposite end of the substrate W, and the plurality of substrates W can be held in the space 2 while being separated from each other.
- the cooling unit 5 is provided so as to sandwich the pair of holding units 3 (grooves 4) in the Z direction. That is, a pair of cooling units 5 having cooling means provided with the pair of holding units 3 sandwiched in a direction (Z direction) intersecting a direction (X direction) in which the holding units 3 face each other are provided.
- the cooling unit 5 is provided so as to extend inside the space 2 in the XY directions. Therefore, a space 2a is formed for each pair of cooling sections 5, and the substrate W can be held for each space 2a.
- the cooling unit 5 is provided with cooling means.
- the cooling means include those that allow the refrigerant R to flow into the flow path 6 provided inside the cooling unit 5 as illustrated in FIGS. 1 and 2.
- supply means for example, a pump
- the refrigerant R can circulate in the flow path 6 formed in a loop shape.
- the flow path can be freely configured in a spiral shape or a lattice shape other than those illustrated.
- the flow path be arranged and shaped so that the in-plane temperature of the cooling unit 5 is as uniform as possible.
- a tank (not shown) for storing the refrigerant R, a temperature control means (not shown) for controlling the temperature of the refrigerant R, and the like can be provided as appropriate.
- the refrigerant R examples include gases such as nitrogen and air, liquids such as water and fluorine-based liquids, gel-like fluids, and the like.
- the cooling means is not limited to the one that allows the refrigerant R to flow into the flow path 6, and a cooling unit that can cool the cooling unit 5 can be appropriately selected.
- a Peltier element or the like can be provided as a cooling means. Even when other cooling means such as a Peltier element is provided, the arrangement, shape, number, etc. are preferably such that the in-plane temperature of the cooling unit 5 is as uniform as possible.
- the material of the substrate cooling device 1 is not particularly limited, it is preferable that at least the cooling unit 5 is formed of a material having excellent thermal conductivity.
- metal materials such as aluminum alloy and stainless steel, can be illustrated, for example. However, it is not necessarily limited to those illustrated, and can be appropriately selected.
- the substrate W that has been subjected to processing such as plasma processing and heat treatment is transported by a transport device (not shown), and the transported substrate W is stored in a space 2 a provided in the substrate cooling device 1. At this time, the vicinity of the end of the substrate W is supported by inserting the substrate W into the groove portion 4 provided in the holding portion 3, and the substrate W is held in the space 2a.
- the refrigerant R is supplied into a flow path 6 provided inside the cooling unit 5 by a supply unit (not shown), and the cooling unit 5 is cooled by circulating the refrigerant R through the flow path 6.
- the substrate W held in the space 2a is transmitted to the cooling unit 5 by radiation and convection in the space 2a, the substrate W is cooled. Then, the cooled substrate W is carried out by a transfer device (not shown) and stored in a FOUP (Front Opening Unified Pod). Whether or not the cooling of the substrate W has been completed can be known by measuring the temperature of the substrate W. Further, the cooling end time can be determined based on the cooling time obtained in advance through experiments or the like.
- FOUP Front Opening Unified Pod
- the temperature of the substrate W can be lowered before being stored in the hoop, deformation or breakage of the hoop that may occur when the substrate W having a high temperature immediately after processing is stored in the hoop as it is. Etc. can be suppressed.
- the heat of the substrate W can be actively taken away by the action of the cooling unit 5. Further, since the cooling unit 5 is provided so as to sandwich the pair of holding units 3 (grooves 4) in the Z direction, heat can be taken from the main surfaces (front surface and back surface) on both sides of the substrate W. Therefore, the cooling time can be shortened. As a result, production efficiency can be improved.
- the cooling unit 5 can be cooled substantially uniformly by the action of the cooling means provided in the cooling unit 5.
- the flow path 6 is provided inside the cooling unit 5, and the refrigerant R circulates in the flow path 6.
- the cooling unit 5 is provided with other cooling means such as a Peltier element. Therefore, since the temperature gradient in the cooling unit 5 can be reduced by the action of the cooling means, the cooling unit 5 can be cooled substantially uniformly.
- the main surfaces on both sides of the substrate W can be cooled substantially uniformly by the cooling unit 5 cooled substantially uniformly in this way. Therefore, the temperature difference between the main surfaces (front surface and back surface) on both sides of the substrate W and the in-plane temperature distribution of the substrate W can be reduced.
- the occurrence of warpage and distortion of the substrate W can be suppressed.
- the arrangement, shape, number, etc. of the cooling means are such that the in-plane temperature of the cooling unit 5 is as uniform as possible, the temperature gradient in the cooling unit 5 can be further reduced. Therefore, since the cooling unit 5 can be cooled more uniformly, the main surfaces on both sides of the substrate W can be cooled more uniformly. As a result, the temperature difference between the main surfaces (front surface and back surface) on both sides of the substrate W and the in-plane temperature distribution of the substrate W can be further reduced, thereby further suppressing the warpage and distortion of the substrate W. it can.
- the cooling time of the substrate W stored above may be increased.
- the cooling unit 5 is provided so as to extend in the XY direction inside the space 2, thermal interference between substrates accommodated in the Z direction can be suppressed. . That is, since the substrate W is held inside the space 2a partitioned at both ends in the Z direction by the cooling unit 5, the heat of the substrate W stored below is transferred to the substrate W stored upward by convection. It is possible to suppress transmission. For this reason, the cooling time can be made uniform and shortened, and it is also possible to suppress a difference in temperature depending on the storage position (storage position in the Z direction).
- 1 and 2 exemplify the case where one substrate W is stored in each space 2a, but a plurality of substrates W may be stored in each space 2a. That is, a plurality of pairs of holding units 3 can be provided between the pair of cooling units 5. However, from the viewpoint of shortening the cooling time and equalizing the temperature of the substrates W, it is preferable to reduce the number of substrates W accommodated in each space 2a.
- FIG. 3 is a schematic view for illustrating a substrate cooling apparatus according to the second embodiment of the present invention.
- the arrow X, the arrow Y, and the arrow Z represent three directions orthogonal to each other
- the arrow X and the arrow Y represent the horizontal direction
- the arrow Z represents the vertical direction.
- 4 is a cross-sectional view taken along the line BB in FIG.
- the substrate cooling device 11 includes a housing 10 having a space 2 in which the substrate W is accommodated, similarly to the substrate cooling device 1 described above.
- a pair of holding portions 3 having a groove portion 4 that supports the vicinity of the end portion of the substrate W is provided on the inner wall 10 a of the housing 10.
- the cooling unit 5 is provided so as to sandwich the pair of holding units 3 (grooves 4) in the Z direction. That is, a pair of cooling units 5 having cooling means provided with the pair of holding units 3 sandwiched in a direction (Z direction) intersecting with a direction (X direction) in which the holding units 3 face each other are provided.
- the cooling means can be the same as that of the substrate cooling apparatus 1 described above.
- the one end side in the Y direction of the substrate cooling device 11 is opened to insert the substrate W into the housing 10.
- a gas introducing means 14 for introducing the gas G toward the space 2 is provided on the opened end side. That is, the gas introduction means 14 for introducing gas from one end face side of the housing 10 into the space 2a formed between the pair of cooling units 5 is provided.
- the gas introducing means 14 can be provided at a position that does not hinder the loading (insertion) and unloading of the substrate W.
- a moving means (not shown) is provided for loading (insertion) and unloading. It can also be made to evacuate.
- a gas discharge means 12 for exhausting the gas G introduced toward the space 2a is provided on the side opposite to the side where the gas introduction means 14 is provided. That is, the gas discharge means 12 which discharges the introduced gas G is provided on the end face opposite to the end face side where the gas introduction means 14 is provided.
- the gas introduction means 14 can be a nozzle provided with a jet nozzle 14a as shown in FIGS.
- the gas introduction means 14 has a tubular shape and one end is closed.
- a gas supply means (not shown) is connected to the other end.
- Examples of the gas supply means (not shown) include a high-pressure gas cylinder and a gas supply facility provided in a factory.
- a control means (not shown) for controlling the flow rate and pressure of the gas G supplied to the gas introduction means 14 can be provided as appropriate.
- the plurality of jet nozzles 14a provided in the gas introduction means 14 are provided in a portion facing each space 2a so that the gas G can be introduced into each space 2a. Further, at a position where the gas G can be introduced into the space formed between the main surfaces (front and back surfaces of the substrate W) on both sides of the substrate W held by the holding unit 3 (groove 4) and the cooling unit 5. Is provided. That is, the gas introduction unit 14 introduces the gas G into the space 2 a formed between the pair of cooling units 5 along the main surface of the cooling unit 5. The gas introduction unit 14 introduces the gas G into the space 2 a formed between the pair of cooling units 5 along the main surface of the accommodated substrate W.
- a gas discharge port 13 is provided at an end portion on the side facing the side where the gas introduction means 14 is provided.
- the gas discharge port 13 is provided for each space 2a.
- the gas discharge means 12 is provided so as to cover the gas discharge port 13, and the space 12 a and the space 2 a formed inside are communicated via the gas discharge port 13.
- an exhaust port 12b for connecting to an exhaust device (not shown) is provided at one end in the Z direction of the gas exhaust means 12.
- an exhaust device an exhaust facility provided in a factory can be exemplified. Although an exhaust device (not shown) is not necessarily required, if an exhaust device (not shown) is provided, the flow of the gas G in the space 2a can be smoothed.
- the gas G introduced by the gas introduction means 14 is not particularly limited, but it is preferable that the gas G hardly causes a chemical reaction with the high-temperature substrate W.
- inert gas such as nitrogen gas, can be illustrated, for example.
- the substrate W that has been subjected to processing such as plasma processing and heat treatment is transported by a transport device (not shown), and the transported substrate W is stored in a space 2 a provided in the substrate cooling device 11. At this time, the vicinity of the end of the substrate W is supported by inserting the substrate W into the groove portion 4 provided in the holding portion 3, and the substrate W is held in the space 2a.
- the refrigerant R is supplied into a flow path 6 provided inside the cooling unit 5 by a supply unit (not shown), and the cooling unit 5 is cooled by circulating the refrigerant R through the flow path 6. Further, the gas G is introduced from the gas introduction means 14 into each space 2a.
- the introduced gas G is arranged so as to be along the main surface of the substrate W or the cooling unit 5 in the space formed between the main surfaces on both sides of the substrate W (the front and back surfaces of the substrate W) and the cooling unit 5.
- the gas is discharged into a space 12 a formed inside the gas discharge means 12 through the gas discharge port 13.
- emitted by the space 12a is discharged
- the cooled substrate W is unloaded by a transfer device (not shown) and stored in a FOUP (Front Opening Unified) Pod. Whether or not the cooling of the substrate W has been completed can be known by measuring the temperature of the substrate W. Further, the cooling end time can be determined based on the cooling time obtained in advance through experiments or the like.
- the temperature of the substrate W can be lowered before being stored in the hoop, deformation or breakage of the hoop that may occur when the substrate W having a high temperature immediately after processing is stored in the hoop as it is. Etc. can be suppressed.
- the heat of the substrate W held in the space 2a is partially transmitted to the cooling unit 5 by radiation, but is mainly transmitted to the gas G.
- the gas G whose temperature has risen due to the transfer of heat from the substrate W is discharged to the gas discharge means 12 through the gas discharge port 13. Therefore, since the temperature rise of the gas G in the space 2a is suppressed, heat transfer to the gas G can be improved.
- the gas G whose temperature has risen is cooled by the cooling unit 5, the heat transfer to the gas G can be further improved. As a result, the cooling time can be further shortened. Moreover, production efficiency can be further improved.
- the temperature gradient of the gas G flowing in the space 2a can be reduced. That is, the temperature difference of the gas G between the vicinity of the portion where the gas G is introduced and the vicinity of the gas outlet 13 where the gas G is discharged can be reduced. Therefore, the temperature of the substrate W can be made uniform, and the occurrence of warpage and distortion can be suppressed.
- the substrate W is held inside the space 2a partitioned at both ends in the Z direction by the cooling unit 5, the substrate W accommodated below is stored. It is possible to suppress the heat from being transferred to the substrate W stored above by convection. For this reason, the cooling time can be made uniform and shortened, and the occurrence of a temperature difference depending on the storage position can be suppressed.
- 3 and 4 exemplify the case where one substrate W is stored in each space 2a, but a plurality of substrates W may be stored in each space 2a. That is, a plurality of pairs of holding units 3 can be provided between the pair of cooling units 5. Even in this case, by introducing the gas G into the space formed between the substrates W, it is possible to achieve rapid cooling and uniform temperature of the substrate W. Further, by storing a plurality of substrates W in each space 2a, it is possible to improve production efficiency and space efficiency. However, from the viewpoint of shortening the cooling time and equalizing the temperature of the substrates W, it is preferable to reduce the number of substrates W accommodated in each space 2a.
- FIG. 5 is a schematic view for illustrating a substrate processing system according to a third embodiment of the invention.
- the substrate processing system 100 is provided with a processing device 21 that processes a substrate W, a storage device 103 that stores the substrate W, and a substrate cooling device 11.
- a transfer device 101 that transfers the substrate W among the processing device 21, the storage device 103, and the substrate cooling device 11 is provided.
- the substrate cooling device 11 is provided, but the substrate cooling device 1 may be used.
- the processing apparatus 21 for example, an apparatus that performs plasma processing or heat treatment of the substrate W can be exemplified. Further, the configuration of the processing apparatus 21 can be appropriately changed depending on the substrate W and the content of the processing. Examples of plasma processing of the substrate W include, for example, those that perform ashing processing, etching processing, and film formation processing of a wafer of a semiconductor device, and those that perform etching processing, film formation processing, etc. of a glass substrate of a liquid crystal display device Can do.
- the processing apparatus 21 an apparatus that performs plasma processing of a wafer will be described.
- the processing apparatus 21 is a so-called multi-chamber processing apparatus having a plurality of processing chambers.
- the processing apparatus 21 includes a load lock chamber 22, a transfer chamber 23, and processing chambers 24a and 24b that can be decompressed.
- a plurality of transfer ports 25a to 25d are formed in parallel.
- the load lock chamber 22 and the transfer chamber 23, and the transfer chamber 23 and the processing chambers 24a and 24b are connected to each other through the transfer ports 25a to 25d so as to communicate with each other.
- gate valves 26 are provided below the respective transfer ports 25a to 25d so as to protrude, and the transfer ports 25a to 25d can be hermetically closed by the gate valve 26.
- a delivery port 27 is also provided on the other wall surface of the load lock chamber 22 (a wall surface facing the transfer chamber 23 side), and the delivery port 27 can be hermetically closed by an atmospheric valve 27a.
- FIG. 6 is a schematic cross-sectional view for illustrating the configuration of the processing chambers 24a and 24b.
- the processing chambers 24 a and 24 b are provided on the outside of the processing container 40, a waveguide (transmission window) 54 made of a flat dielectric plate provided on the upper surface of the processing container 40, and the waveguide 54.
- an introduction waveguide 50 is provided.
- a slot antenna 52 for introducing the microwave M into the waveguide 54 is provided at a portion of the introduction waveguide 50 that contacts the waveguide 54.
- a stage 16 for placing and holding a substrate W such as a wafer is provided inside the processing container 40.
- the processing container 40 can maintain a reduced-pressure atmosphere formed by the reduced-pressure exhaust system E, and a gas introduction pipe (not shown) for introducing a processing gas into a space where the plasma P is generated is appropriately provided.
- a gas introduction pipe (not shown) for introducing a processing gas into a space where the plasma P is generated is appropriately provided.
- the transfer ports 25c and 25d are provided on one side wall of the processing container 40, and the transfer ports 25c and 25d can be hermetically closed by the gate valve 26.
- the transfer device 101 is provided with arms 101a having joints that are separated from each other in the vertical direction.
- a holding means (not shown) capable of mounting and holding the substrate W is provided at the tip of the arm 101a.
- the arm base 101c of the arm 101a is provided is connected to the moving means 101b, arm base 101c is movable in the direction of the arrow F 13. Therefore, to stretch so as to bend the arm 101a, placed on two substrates W at the tip of the arm 101a, and held, and is movable in the direction of the left arrow F 13 in that state.
- means for adjusting the rotation direction and vertical position of the substrate W (not shown), and means for changing the direction of the arm 101a by rotating the base of the arm 101a.
- the storage device 103 is for storing the substrate W that has been subjected to the plasma processing before the plasma processing, and examples thereof include a wafer carrier that can store the substrates W in a stacked form (multi-stage shape). Specifically, a front opening type carrier FOUP (FOUP: Front Opening Unified Pod) for the purpose of transporting and storing the substrate W used in a mini-environment semiconductor factory can be used. Note that a door opening / closing device or the like on the front of the carrier can be provided as appropriate.
- FOUP Front Opening Unified Pod
- the substrate cooling device 11 is for cooling the substrate W after the plasma processing.
- the temperature of the substrate W that is an object to be processed becomes high. Therefore, it is necessary to cool and lower the temperature when storing it in a resin carrier or the like.
- the cooling time can be shortened, so that the production efficiency can be improved. Further, the occurrence of warpage and distortion of the substrate W can be suppressed.
- FIGS. 7 and 8 are schematic views for illustrating the operation of the substrate processing system 100.
- FIG. First as shown in FIG. 5, the arm base 101 c of the transfer device 101 is moved to the front of the predetermined storage device 103. The door of the storage device 103 is opened by an opening / closing device (not shown). Then, so as to bend the arm 101a extended in the direction of the arrow F 2, it receives the two substrates W in a state having a predetermined gap up and down. Then, from the storage unit 103 so as to bend the arm 101a contracted in the direction of the arrow F 1 unloading the substrate W.
- the arm 101 a is rotated 180 ° and the direction thereof is directed toward the processing device 21.
- the position of the arm base 101c is appropriately adjusted so as to come to the front of the processing device 21.
- the fingers 62a and 62b are rotated by 90 ° in the directions of arrows F 5 and F 6 to distribute the two substrates W to the first delivery position 28a and the second delivery position 28b.
- the substrate W is pushed up to a predetermined height by a push pin (not shown).
- fingers (not shown) of the robot apparatuses 11 a and 11 b provided in the transfer chamber 23 are inserted below the pushed-up substrate W. Thereafter, the push-up pin is lowered, and the substrate W is delivered onto the fingers (not shown) of the robot apparatuses 11a and 11b.
- the transfer chamber 23 is also hermetically sealed with a gate valve 26, and the inside thereof is decompressed to a predetermined pressure.
- the substrate W is transferred to the stage 16 in the processing chambers 24a and 24b by a push-up pin (not shown).
- the processing chambers 24a and 24b are hermetically sealed by the gate valve 26, and plasma processing is performed.
- the inside of the processing container 40 is depressurized to a predetermined pressure by the vacuum exhaust system E, and a predetermined processing gas is directed toward the space in the processing container 40 where the plasma P is generated.
- a microwave M of 2.45 GHz for example, is introduced into the introduction waveguide 50 from a microwave power source (not shown).
- the microwave M propagated through the waveguide 50 is introduced into the waveguide 54 through the slot antenna 52.
- the waveguide 54 is made of a dielectric such as quartz or alumina, and the microwave M propagates as a surface wave on the surface of the waveguide 54 and is radiated toward a space where the plasma P in the processing container 40 is generated.
- the plasma P of the processing gas is formed by the energy of the microwave M radiated into the space where the plasma P is generated in this way.
- the electron density in the plasma P generated in this way becomes equal to or higher than the density (cutoff density) that can shield the microwave M introduced through the waveguide 54, the microwave M passes from the lower surface of the waveguide 54 to the chamber. Reflected until a certain distance (skin depth) enters the space where the plasma P is generated, and a standing wave of the microwave M is formed.
- the reflection surface of the microwave M becomes a plasma excitation surface, and the plasma P is stably excited on this plasma excitation surface.
- the plasma P excited on the plasma excitation surface ions and electrons collide with the molecules of the processing gas, so that excited active species (plasma products) such as excited atoms, molecules, and free atoms (radicals). Is generated.
- plasma products are diffused in the processing container 40 as indicated by an arrow C and fly to the surface of the substrate W, and plasma processing is performed. Note that a known technique can be applied to the plasma processing conditions and the like, and a description thereof will be omitted.
- the substrate W after the plasma processing is transferred to the arm 101a of the transfer apparatus 101 in the reverse procedure to that described above. That is, it is transported in the directions of arrows F 8 , F 10 , F 5 , F 6 , and F 4 in FIG. 7 and delivered to the arm 101 a of the transport device 101.
- the arm base 101 c is moved to the front of the substrate cooling device 11. Then, the arm 101 a is bent to extend in the direction of the arrow F 11 , and the substrate W is transferred to the substrate cooling device 11.
- the substrate cooling device 11 receives the two substrates W with a predetermined interval in the vertical direction. Can be passed.
- the arm base 101 c is moved to the front of the storage device 103.
- the arm 101 a is rotated 180 ° and bent in the direction of the arrow F 2 so as to be bent, and the substrate W is transferred to the storage device 103.
- the substrate cooling device 11 can store a plurality of substrates W in each space 2a
- the two substrates W are received from the substrate cooling device 11 with a predetermined interval in the vertical direction. , It can be delivered to the storage device 103.
- the substrates W carried out from the storage device 103 are controlled so as to be stored in the same place in the same storage device 103. Thereafter, if necessary, the above-described procedure is repeated to continuously process the substrate W.
- each element included in the substrate cooling device 1, the substrate cooling device 11, and the substrate processing system 100 are not limited to those illustrated, but can be changed as appropriate.
- each element with which each embodiment mentioned above is combined can be combined as much as possible, and what combined these is also included in the scope of the present invention as long as the characteristics of the present invention are included.
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Abstract
Description
Pod)と呼ばれる密閉型の容器が用いられるようになってきている。
ここで、一般的には、フープは樹脂材料から形成される場合が多く耐熱温度が低いものとなっている。そのため、処理直後の温度の高い基板をそのまま収納すると、フープが変形したり破損したりするおそれがある。
特許文献1には、基板に向けてガスを噴射する冷却ガス噴射ノズルを備えた基板処理装置が開示されている。この基板処理装置によれば、処理の済んだ基板の温度を低下させることができる。しかしながら、噴射されたガスが基板の主面上を沿うように流れる間にガスの温度が上昇し、下流側における冷却効果が低下するおそれがある。そのため、冷却時間の短縮を図ることができないおそれがある。
図1は、本発明の第1の実施形態に係る基板冷却装置を例示するための模式図である。なお、図1中の矢印X、矢印Y、矢印Zは互いに直交する三方向を表しており、矢印X、矢印Yは水平方向、矢印Zは鉛直方向を表している。
また、図2は、図1におけるA-A矢視断面図である。
図1、図2に示すように、基板冷却装置1は、Y方向における一方の端部側が、内部に基板Wを挿入するために開口され、内部に基板Wを収納する空間2を有する筐体10を備えている。また、筐体10の内壁10aに互いに対向するように設けられ、基板Wの端部近傍を支持する溝部4を有する一対の保持部3が設けられている。また、保持部3に設けられている溝部4も互いに対向するようにして一対ずつ設けられている。
また、冷却手段は、流路6内に冷媒Rを流入させるようなものに限定されるわけではなく、冷却部5の冷却を行うことができるものを適宜選択することができる。例えば、冷却手段としてペルチェ素子などを設けるようにすることができる。なお、ペルチェ素子などの他の冷却手段を設ける場合にも、冷却部5の面内温度ができるだけ均一となるような、配置、形状、数などとすることが好ましい。
プラズマ処理や熱処理などの処理が済んだ基板Wが図示しない搬送装置により搬送され、搬送されてきた基板Wが基板冷却装置1に設けられた空間2a内に収納される。この際、保持部3に設けられた溝部4に基板Wを挿入することで基板Wの端部近傍が支持され、基板Wが空間2a内に保持される。
一方、図示しない供給手段により冷却部5の内部に設けられた流路6内に冷媒Rが供給され、流路6内を冷媒Rが循環することで冷却部5の冷却が行われる。
ここで、空間2a内に保持された基板Wの熱は、輻射および空間2a内の対流により冷却部5に伝達されるので、基板Wの冷却が行われることになる。
そして、冷却が済んだ基板Wは、図示しない搬送装置により搬出されて、フープ(FOUP:Front Opening Unified Pod)内に収納される。なお、基板Wの冷却が終了したか否かは、基板Wの温度を測定することで知ることができる。また、予め実験などで求められた冷却時間により冷却の終了時期を決定するようにすることもできる。
本実施の形態によれば、冷却部5の作用により基板Wの熱を積極的に奪うことができる。また、一対の保持部3(溝部4)をZ方向に挟むようにして冷却部5が設けられているので、基板Wの両側の主面(表面および裏面)から熱を奪うことができる。そのため、冷却時間を短縮することができる。その結果、生産効率を向上させることができることになる。
そして、このように略均一に冷却された冷却部5により、基板Wの両側の主面を略均一に冷却することができる。そのため、基板Wの両側の主面(表面および裏面)間における温度差や基板Wの面内温度分布を小さくすることができる。その結果、基板Wの反りや歪みの発生を抑制することができる。
特に、冷却部5の面内温度ができるだけ均一となるような、冷却手段の配置、形状、数などとされている場合には、冷却部5における温度勾配をより少なくすることができる。そのため、冷却部5をさらに均一に冷却することができるので、基板Wの両側の主面をさらに均一に冷却することができる。その結果、基板Wの両側の主面(表面および裏面)間における温度差や基板Wの面内温度分布をさらに小さくすることができるので、基板Wの反りや歪みの発生をさらに抑制することができる。
本実施の形態においては、空間2の内部をXY方向に延在するようにして冷却部5を設けるようにしているので、Z方向に収納された基板同士の熱的干渉を抑制することができる。すなわち、Z方向の両端を冷却部5により仕切られた空間2aの内部に基板Wを保持するようにしているので、下方に収納された基板Wの熱が対流により上方に収納された基板Wに伝わることを抑制することができる。そのため、冷却時間の均一化、短縮化を図ることができ、また、収納される位置(Z方向の収納位置)により温度に差が生ずることも抑制することができる。
また、図4は、図3におけるB-B矢視断面図である。
図3、図4に示すように、基板冷却装置11は、前述した基板冷却装置1と同様に、内部に基板Wを収納する空間2を有する筐体10を備えている。また、筐体10の内壁10aには、基板Wの端部近傍を支持する溝部4を有する一対の保持部3が設けられている。また、一対の保持部3(溝部4)をZ方向に挟むようにして冷却部5が設けられている。すなわち、保持部3が互いに対向する方向(X方向)とは交差する方向(Z方向)に一対の保持部3を挟んで設けられた冷却手段を有する一対の冷却部5が設けられている。なお、冷却手段としては、前述した基板冷却装置1と同様とすることができる。
ガス排出手段12は、ガス排出口13を覆うようにして設けられ、内部に形成された空間12aと空間2aとがガス排出口13を介して連通されている。また、ガス排出手段12のZ方向の一端には図示しない排気装置に接続するための排気口12bが設けられている。図示しない排気装置としては、工場に設けられた排気設備などを例示することができる。なお、図示しない排気装置は必ずしも必要ではないが、図示しない排気装置を設けるようにすれば、空間2aにおけるガスGの流れの円滑化を図ることができる。
プラズマ処理や熱処理などの処理が済んだ基板Wが図示しない搬送装置により搬送され、搬送されてきた基板Wが基板冷却装置11に設けられた空間2a内に収納される。この際、保持部3に設けられた溝部4に基板Wを挿入することで基板Wの端部近傍が支持され、基板Wが空間2a内に保持される。
一方、図示しない供給手段により冷却部5の内部に設けられた流路6内に冷媒Rが供給され、流路6内を冷媒Rが循環することで冷却部5の冷却が行われる。
また、ガス導入手段14から各空間2aにガスGが導入される。導入されたガスGは、基板Wの両側の主面(基板Wの表面と裏面)と冷却部5との間に形成された空間内を基板Wや冷却部5の主面に沿うようにして流れ、ガス排出口13を介してガス排出手段12の内部に形成された空間12aに排出される。そして、空間12aに排出されたガスGは、排気口12bを介して図示しない排気装置に向けて排出される。
ただし、冷却時間の短縮や基板Wの温度の均一化の観点からは、各空間2a内に収納される基板Wの数を少なくするようにすることが好ましい。
図5は、本発明の第3の実施形態に係る基板処理システムを例示するための模式図である。
図5に示すように、基板処理システム100には、基板Wの処理を行う処理装置21と、基板Wを収納する収納装置103と、基板冷却装置11と、が設けられている。また、処理装置21と、収納装置103と、基板冷却装置11と、の間の基板Wの搬送を行う搬送装置101が設けられている。なお、図5に例示をしたものの場合には、基板冷却装置11が設けられているが、基板冷却装置1であってもよい。
ここでは処理装置21の一例として、ウェーハのプラズマ処理を行うものについて説明をする。なお、処理装置21は複数の処理室を備える、いわゆるマルチチャンバ方式の処理装置である。
ロードロック室22の他方の壁面(トランスファー室23側に対向する側の壁面)にも受け渡し口27が設けられており、大気バルブ27aにより受け渡し口27が気密に閉鎖可能となっている。
処理室24a、24bには、処理容器40と、この処理容器40の上面に設けられた平板状の誘電体板からなる導波体(透過窓)54と、導波体54の外側に設けられた導入導波管50と、が設けられている。また、導入導波管50の導波体54と当接する部分には、導波体54にマイクロ波Mを導入するためのスロットアンテナ52が設けられている。また、処理容器40の内部には、ウェーハなどの基板Wを載置、保持するためのステージ16が設けられている。
処理容器40の一方の側壁には、前述したように受け渡し口25c、25dが設けられ、また、ゲートバルブ26により各受け渡し口25c、25dが気密に閉鎖可能となっている。
図7、図8は、基板処理システム100の作用を例示するための模式図である。
まず、図5に示すように、搬送装置101のアーム基台101cを所定の収納装置103の正面まで移動させる。なお、収納装置103の扉は図示しない開閉装置により開かれている。次に、アーム101aを屈曲させるようにして矢印F2の方向に伸ばし、2枚の基板Wを上下に所定の間隔を持った状態で受け取る。そして、アーム101aを屈曲させるようにして矢印F1の方向に縮め収納装置103から基板Wを搬出する。
一方、図示しないマイクロ波電源から、例えば2.45GHzのマイクロ波Mが導入導波管50に導入される。導波管50を伝搬したマイクロ波Mは、スロットアンテナ52を介して導波体54に導入される。導波体54は、石英やアルミナなどの誘電体からなり、マイクロ波Mは、表面波として導波体54の表面を伝搬し、処理容器40内のプラズマPが発生する空間に向けて放射される。
なお、プラズマ処理の条件などについては既知の技術を適用することができるので、その説明は省略する。
なお、基板Wの冷却に関しては、基板冷却装置11の作用において例示をしたものと同様のため省略する。
また、収納装置103から搬出された基板Wは、同じ収納装置103の同じ場所に収納されるように制御されている。その後、必要があれば、前述の手順が繰り返されて基板Wの処理が連続的に行われる。
前述の実施の形態に関して、当業者が適宜設計変更を加えたものも、本発明の特徴を備えている限り、本発明の範囲に包含される。
例えば、基板冷却装置1、基板冷却装置11、基板処理システム100が備える各要素の形状、寸法、材料、配置などは、例示をしたものに限定されるわけではなく適宜変更することができる。
また、前述した各実施の形態が備える各要素は、可能な限りにおいて組み合わせることができ、これらを組み合わせたものも本発明の特徴を含む限り本発明の範囲に包含される。
2 空間
2a 空間
3 保持部
4 溝部
5 冷却部
6 流路
10 筐体
10a 内壁
11 基板冷却装置
12 ガス排出手段
12a 空間
12b 排気口
13 ガス排出口
14 ガス導入手段
14a 噴出口
21 処理装置
100 基板処理システム
101 搬送装置
103 収納装置
G ガス
R 冷媒
W 基板
Claims (8)
- 処理の済んだ基板の冷却を行う基板冷却装置であって、
内部に基板を収納する空間を有する筐体と、
前記筐体の内壁に互いに対向するように設けられ、前記基板の端部近傍を支持する溝部を有する一対の保持部と、
前記保持部が互いに対向する方向と交差する方向に前記一対の保持部を挟んで設けられた冷却手段を有する一対の冷却部と、
を備えたことを特徴とする基板冷却装置。 - 前記一対の冷却部によって仕切られた空間の内部に前記基板が保持されること、を特徴とする請求項1記載の基板冷却装置。
- 前記筐体の一方の端面側から前記一対の冷却部によって仕切られた空間の内部にガスを導入するガス導入手段と、
前記ガス導入手段が設けられた前記端面側と対向する側の端面に設けられ、前記導入されたガスを排出するガス排出手段と、
をさらに備えたことを特徴とする請求項1記載の基板冷却装置。 - 前記ガス導入手段は、前記冷却部の主面に沿うように前記ガスを前記一対の冷却部によって仕切られた空間の内部に導入すること、を特徴とする請求項3記載の基板冷却装置。
- 前記ガス導入手段は、収納された基板の主面に沿うように前記ガスを前記一対の冷却部によって仕切られた空間の内部に導入すること、を特徴とする請求項3記載の基板冷却装置。
- 前記保持部が互いに対向する方向とは交差する方向に、前記一対の保持部と、前記冷却部と、が交互に設けられたことを特徴とする請求項2記載の基板冷却装置。
- 前記一対の冷却部によって仕切られた空間の内部には、前記一対の保持部が複数設けられたことを特徴とする請求項2記載の基板冷却装置。
- 基板の処理を行う処理装置と、
前記基板を収納する収納装置と、
請求項1記載の基板冷却装置と、
前記処理装置と、前記収納装置と、前記基板冷却装置と、の間の前記基板の搬送を行う搬送装置と、
を備えることを特徴とする基板処理システム。
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KR101590684B1 (ko) | 2010-08-27 | 2016-02-01 | 쌩-고벵 글래스 프랑스 | 복수의 다층체를 열처리하기 위한 장치 및 방법 |
JP7465855B2 (ja) | 2021-09-27 | 2024-04-11 | 芝浦メカトロニクス株式会社 | 加熱処理装置、搬入搬出治具、および有機膜の形成方法 |
Also Published As
Publication number | Publication date |
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KR101650217B1 (ko) | 2016-08-22 |
US20110290185A1 (en) | 2011-12-01 |
JPWO2010067544A1 (ja) | 2012-05-17 |
KR20110098806A (ko) | 2011-09-01 |
CN102246290B (zh) | 2014-03-05 |
JP5355590B2 (ja) | 2013-11-27 |
CN102246290A (zh) | 2011-11-16 |
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