JP2013546157A - 複数の多層体を熱処理するための装置および方法 - Google Patents
複数の多層体を熱処理するための装置および方法 Download PDFInfo
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- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D9/00—Cooling of furnaces or of charges therein
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
Description
(2.1)、(2.2)、(2.3) 放射器場
(3.1)、(3.2) プロセスレベル
(4.1)、(4.2) 多層体
(5.1)、(5.2) プロセスボックス
(6.1)、(6.2)、(6.3) 反射器
(7.1)、(7.2)、(7.3) 冷却板
(8) エアロック
(9) 放射加熱器、線形エミッタ
(9.1)、(9.2) 放射加熱器(9)のレベル
(10) 放射加熱器(9)用の反射器
(11) 移送方向
Claims (15)
- 移送方向(11)に対して前後に設けられた、少なくとも1つの加熱チャンバ(HK1)および少なくとも1つの冷却チャンバ(KK1)内で、上下に設けられた少なくとも2つのプロセスレベル(3.1、3.2)で少なくとも2つの多層体(4.1、4.2)を熱処理する装置であって、
加熱チャンバ(HK1)は、
第一多層体(4.1)を加熱するための放射加熱器(9)を備える第一放射器場(2.1)と第二放射器場(2.2)との間に位置する、少なくとも1つの第一多層体(4.1)のための第一プロセスボックス(5.1)を備える第一プロセスレベル(3.1)と、
第二多層体(4.2)を加熱するための放射加熱器(9)を備える第二放射器場(2.2)と第三放射器場(2.3)との間に位置する、少なくとも1つの第二多層体(4.2)のための第二プロセスボックス(5.2)を備える第二プロセスレベル(3.2)と
を含み、
第一放射器場(2.1)および第二放射器場(2.2)は、第二放射器場(2.2)によるのとは異なる放射強度で第一プロセスレベル(3.1)が第一放射器場(2.1)によって照射され得るように配備され、および/または第二放射器場(2.2)および第三放射器場(2.3)は、第三放射器場(2.3)によるのとは異なる放射強度で第二プロセスレベル(3.2)が第二放射器場(2.2)によって照射され得るように配備され、
冷却チャンバ(KK1)は、
冷却装置と、
少なくとも1つの第一多層体(4.1)を冷却するための第一プロセスレベル(3.1)および少なくとも1つの第二多層体(4.2)を冷却するための第二プロセスレベル(3.2)とを含む、装置。 - 放射器場(2.1、2.2、2.3)が、電磁放射の方向依存性放射特性および/または異なる放射パワーを有する、請求項1に記載の装置。
- 放射加熱器(9)が反射器層(10)を有する、請求項2に記載の装置。
- 2つのプロセスレベル(3.1、3.2)の間に設けられた第二放射器場(2.2)の放射加熱器(9)が、反射器層(10)を有し、第一プロセスレベル(3.1)または第二プロセスレベル(3.2)のいずれかを照射するように配備される、請求項3に記載の装置。
- 2つのプロセスレベル(3.1、3.2)の間に設けられた第二放射器場(2.2)が放射加熱器(9)を備える2つの放射加熱器レベル(9.1、9.2)を有し、一方の放射加熱器レベル(9.1)は第一プロセスレベル(3.1)を照射するために配備され、他方の放射加熱器レベル(9.2)は第二プロセスレベル(3.2)を照射するように配備される、請求項1に記載の装置。
- 反射器(6.3)が2つの放射加熱器レベル(9.1、9.2)の間に設けられる、請求項5に記載の装置。
- 放射加熱器(9)が、可変放射強度を生成するように選択的に制御されることが可能な、請求項1から6のいずれか1つに記載の装置。
- 放射器場(2.1、2.2、2.3)およびプロセスレベル(3.1、3.2)が互いに平行に設けられている、請求項1から7のいずれか1つに記載の装置。
- 冷却装置が多層体(4.1、4.2)を冷却するための第一冷却板(7.1)、第二冷却板(7.2)、および第三冷却板(7.3)を含み、第一プロセスレベル(3.1)は第一冷却板(7.1)と第二冷却板(7.2)との間に位置し、第二プロセスレベル(3.2)は第二冷却板(7.2)と第三冷却板(7.3)との間に位置する、請求項1から8のいずれか1つに記載の装置。
- 冷却装置が誘導ガスストリームを有する、請求項1から9のいずれか一項に記載の装置。
- エアロック(8)またはスライドゲートが加熱チャンバ(HK1)と冷却チャンバ(KK1)との間に設けられている、請求項1から10のいずれか一項に記載の装置。
- 少なくとも2つの多層体(4.1、4.2)が、加熱チャンバ(HK1)内および/または冷却チャンバ(KK1)内で移送方向に互いに隣り合って1つのプロセスレベル(3.1、3.2)に設けられている、請求項1から11のいずれか一項に記載の装置。
- 加熱チャンバ(HK1)が少なくとも1つの第一反射器(6.1)および少なくとも1つの第二反射器(6.2)を含み、第一放射器場(2.1)は第一反射器(6.1)と第一プロセスレベル(3.1)との間に設けられ、第一反射器(6.1)は第一放射器場(2.1)の電磁放射を反射するように配備されており、第三放射器場(2.3)は第二反射器(6.2)と第二プロセスレベル(3.2)との間に設けられ、第二反射器(6.2)は第三放射器場(2.3)の電磁放射を反射するように配備されている、請求項1から12のいずれか一項に記載の装置。
- 加熱チャンバ(HK1)および/または冷却チャンバ(KK1)が、真空および/または好ましくはプロセスガスまたは不活性ガスを含有するガス雰囲気を生成する装置を有する、請求項1から13のいずれか一項に記載の装置。
- 少なくとも2つのプロセスレベル(3.1、3.2)での少なくとも2つの多層体(4.1、4.2)の連続的熱処理の方法であって、
a. 多層体(4.1)および(4.2)は、放射器場(2.1、2.2、2.3)を用いて1℃から50℃/sの加熱速度で350℃から800℃の温度まで、少なくとも1つの加熱チャンバ(HK1)内で加熱され、第一プロセスレベル(3.1)は第一放射器場(2.1)と第二放射器場(2.2)との間に位置し、第二プロセスレベル(3.2)は第二放射器場(2.2)と第三放射器場(2.3)との間に位置し、第一プロセスレベル(3.1)は、第二放射器場(2.2)によるのとは異なる放射強度で第一放射器場(2.1)によって照射され、および/または第二プロセスレベル(3.2)は第三放射器場(2.3)のよるのとは異なる放射強度で第二放射器場(2.2)によって照射され、
b. 多層体(4.1)および(4.2)は、0℃から50℃/sの冷却速度で、10℃から350℃の温度まで、少なくとも1つの冷却チャンバ(KK1)内で冷却される、方法。
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KR101698281B1 (ko) * | 2012-07-09 | 2017-01-19 | 쌩-고벵 글래스 프랑스 | 기판을 가공하기 위한 시스템 및 방법 |
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CN115323344A (zh) * | 2022-08-09 | 2022-11-11 | 通威太阳能(安徽)有限公司 | 太阳电池及其生产设备、铜种子层镀膜工艺及镀膜装置 |
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